Dear Friends,

Silicon Carbide will contribute to more efficiency and thereby a more sustainable energy handling in the future. Win the evaluation board and learn how!

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Bodo Arlt

STMicroelectronics STPOWER SiC MOSFETs & Diodes

STPOWER SiC MOSFETs and Diodes are based on innovative wide bandgap materials (WBG), that offer higher power density for automotive and industrial applications, enabling you to design more efficient and compact systems than ever.

With an extended range of voltage, rating from 650 to 1700 V and higher in the near future, ST’s SiC MOSFETS feature excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit.

ST SiC Diodes are available from 600 to 1200 V with single and dual diodes encapsulated in package sizes from DPAK to TO-247, including the ceramic insulated TO-220. ST continues to expand its product range with new and innovative packages, such as the slim and compact PowerFLAT 8x8. This family of devices offers an excellent thermal performance, the new standard for high-voltage (HV) surface-mount (SMD) packages and is available for 650 V SiC Diodes from 4 A to 10 A.