Dear Friends,

The industrial market is set to grow significantly over the next few years. This is a welcome trend, especially as electromobility is still waiting for broader acceptance and thus higher volumes.

Find all my magazines from 2006 on in our free archive on bodospower.com. There is no better way to communicate. We all share one world. As a publisher I serve the world: one magazine, on time, every time.

Kind regards,
Bodo Arlt

Enhancing Power MOSFET performance with industry-leading copper-clip packaging technology

Nexperia introduces the JEDEC standard advanced copper-clip CCPAK1212 packaging to a broader selection of power MOSFETs. This innovative package, offered in 12 mm × 12 mm bottom-side cooled (CCPAK1212) and top-side cooled inverted (CCPAK1212i) versions, delivers up to 1.5 kW power capability in a compact footprint. CCPAK1212 provides industry-best SOA performance, low electrical and thermal resistance, and high current density, ensuring reliability and efficiency across a variety of applications.

Watch now:
CCPAK1212: a new era for power semiconductor packaging

Initially launched with Nexperia’s 650 V GaN FETs, this package now enhances NextPower 80/100 V and Application Specific MOSFETs (ASFETs) for hotswap and soft-start portfolios. NextPower 80/100V MOSFETs achieve unmatched R_DS(on) of 1 mΩ, supporting currents up to 505 A and thermal performance of 0.1 K/W, ideal for BLDC motors, SMPS, and BMS applications. CCPAK1212 ASFETs for hotswap exhibit superior thermal stability and linear mode performance, with top- and bottom-side cooling options to meet diverse design needs.

Designers can benefit from enhanced application support, including interactive datasheets for streamlined device analysis.

Nexperia aims to expand the proven success of CCPAK1212 packaging across all standard MOSFET voltage ranges and AEC-Q101-qualified portfolios, addressing the requirements of next-generation applications.

Learn more about CCPAK MOSFETs: www.nexperia.com/products/mosfets/family/ccpak1212-mosfets