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16Tiny µModule Boost Regulator for Low Voltage Optical Systems
18MIDA Half-Bridge IGBT Modules for Low Inductive System Designs
22Applied Power Electronics Conference and Exposition-APEC 2018
2610th Anniversary of the International Conference on Integrated Power Electronics Systems – CIPS 2018
28Enhanced Trench 3300V TSPT+ IGBT Module Brings Highest Current Density and Robustness
34eGaN Technology is Coming to Cars
36Oscilloscopes for Measurements on Advanced Power Semiconductors
40Silicon Nitride Substrates for Power Electronics
42IGBT Driver Module Enables High Power Systems Design with Reduced Design Time and Cost
46Electrolytic Capacitor Leakage Current
52Intermediate Voltage to Increase Power Conversion Efficiency
54Cost and Efficiency of Level-3 DC Fast-Charging Power Modules—A Benchmark Comparison
58Power Supply with Excellent Insulation for Medium-Voltage Systems
62Using Sintering Technology to Reduce Failure Rate of High Current Thyristors
66What They Don’t Teach About Synchronous Rectifiers in School – Selected Topics from Real Designs
68Optimized Thermal Layout for CIPOSTM Nano Half-Bridge Intelligent Power Modules

Editorial
Now it is Summertime!

It will be exciting to meet once again in Nuremberg in early June for PCIM Europe. We can all hope that the asparagus stays good into June. For the last quarter century, it comes to mind that PCIM Europe has been always in May – so no problems for the asparagus. I’ve been an advisory board member since the late 80’s - time does fly by, but asparagus remains a special treat.

Fortunately, technical innovations are the norm. In the 90s IGBT switches, based on silicon, had a major impact – power electronics became more efficient and applications multiplied. Now the story continues with wide band gap devices achieving even more efficient designs. Progress is evident at all power semiconductor conferences around the world. For example: at APEC in Texas, and at TX and CIPS in Stuttgart; SiC and GaN technology has been the major focus.
Wide band gap devices are taking over more and more of the historically served areas of silicon devices.

In a tradition of nearly two decades, I will invite experts from industry leaders to present their latest achievements with wide band gap development. Come to the podium at PCIM Europe on
Wednesday, 6th of June, at Hall 6, Booth 155
From 13:30 to 14:30 we have “SIC – Devices for the Future Design”
From 14:30 to 15:30 we have “GaN – Devices for the Future Design”
Mark up your calendar and we will see you in Nuremberg, a few weeks from now. PCIM is the big family event. I hope the weather will be nice to us, to match sunny Texas, Florida or California.

Engineers work for progress for all people around the world. Our political leaders have to learn such pluralism, rather than play with protectionism, regardless of its appeal in the short term. We have only this one world and need to do the best for future generations. We must be able to explain the work we do to our grandchildren with pride. So we need to be careful with what we do and how we influence progress. It always takes resources and we must to understand that these are not endless – spend them wisely!

Bodo's Power Systems reaches readers across the globe. We have just started to partner with EE tech to enhance the service for North America. If you are using any kind of tablet or smart phone, you will find all of our content on the new website www.eepower.com. If you speak the language, or just want to have a look, don’t miss our Chinese version: www.bodospowerchina.com

My Green Power Tip for May:
Water your flowers in the garden with rain water, rather than using drinking water from the tap.

See you in Nuremberg in June.

Best Regards
Bodo
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