| More News | Teaser | NewsID | NewsSection | Title | Text | Announced | AnnouncedMMM | Picture | PicturePath | WebLink | WebLinkText |
| One-Millionth Ideal Switch shipped | Menlo Microsystems has announced the shipment of i... | 12624 | Industry News | One-Millionth Ideal Switch shipped | Menlo Microsystems has announced the shipment of its one-millionth Ideal Switch®. Unlike traditional switching technologies, the Ideal Switch delivers high performance without compromising between size, weight, efficiency, and reliability. This capability allows OEMs to design smaller, lighter, faster, and more energy-efficient systems that can be readily scaled, offering new solutions to tackling the limitations of switching technologies. The key high-growth markets adopting Ideal Switch technology include Test & Measurement (Menlo already supports 14 of the top 20 semiconductor manufacturers), Aerospace & Defense and Power Switching. The adoption of the Ideal Switch across these markets reflects its growing role in addressing system-level bottlenecks caused by the limitations of traditional mechanical and semiconductor-based switches. | 20.11.2025 09:00:00 | Nov | news_2025-12-01_4.jpg | \images\news_2025-12-01_4.jpg | https://menlomicro.com/newsroom/menlo-micro-hits-one-millionth-ideal-switch-shipment-setting-new-standard-for-switch-technology | menlomicro.com |
| Registration is now open for pre-APEC 2026 Workshops | PSMA has opened registration for both the PSMA Cap... | 12623 | Event News | Registration is now open for pre-APEC 2026 Workshops | PSMA has opened registration for both the PSMA Capacitor Workshop and the Power Magnetics @ High Frequency Workshop to be held on Saturday, March 21 in San Antonio, TX prior to the start of APEC 2026. The PSMA Capacitor Workshop returns to APEC after a four year hiatus. The PSMA Capacitor Committee has put together an agenda and is looking to relaunch this workshop series. The PSMA Power Magnetics @ High Frequency Workshop returns for the 11th consecutive year and is looking forward to starting a second decade of delivering valuable information to the community. Both workshops will share a demo/exhibitor area that will also be home for the workshop lunches and networking hour. Space for both workshops is limited. Early bird registration for both workshops runs until January 30th, 2026. | 20.11.2025 08:00:00 | Nov | news_2025-12-01_3.png | \images\news_2025-12-01_3.png | https://psma.com/technical-forums/capacitor/workshop | psma.com |
| Technology and Foundry Partnership for GaN | GlobalFoundries (GF) and Navitas Semiconductor ann... | 12622 | Industry News | Technology and Foundry Partnership for GaN | GlobalFoundries (GF) and Navitas Semiconductor announced a long-term strategic partnership to strengthen and accelerate U.S.-based gallium nitride technology, design and manufacturing. Together, the companies will collaborate, develop and deliver solutions for critical applications in high power markets that demand the highest efficiency and power density, including AI datacenters, performance computing, energy and grid infrastructure and industrial electrification. Through this long-term partnership, GF and Navitas Semiconductor will manufacture next-generation GaN technology at GF’s Burlington, Vermont (USA) facility, leveraging the site’s expertise in high-voltage GaN-on-Silicon technology and Navitas Semiconductor’s GaN technology and device expertise. Development is set for early 2026 with production expected to begin later in the year. By combining GF’s manufacturing capabilities and Navitas’ GaN capabilities, this strategic partnership is expected to "provide customers with the most advanced, secure and scalable GaN solutions". | 20.11.2025 07:00:00 | Nov | news_2025-12-01_2.jpg | \images\news_2025-12-01_2.jpg | https://navitassemi.com/globalfoundries-and-navitas-semiconductor-partner-to-accelerate-u-s-gan-technology-and-manufacturing-for-ai-datacenters-and-critical-power-applications/ | navitassemi.com |
| Joining Forces for Data Center Power Solutions | Delta and Siemens Smart Infrastructure have formal... | 12625 | Industry News | Joining Forces for Data Center Power Solutions | Delta and Siemens Smart Infrastructure have formalized a global partnership to deliver prefabricated, modular power solutions designed to accelerate the deployment of data center infrastructure, while significantly reducing CAPEX. The partnership is expected to "ensure hyperscale and colocation operators enjoy a strategic advantage in the competitive AI and cloud computing data center market, with the highest performance in power management and reliability". The core of the agreement centers on the delivery of prefabricated, integrated containerized power solutions (SKIDs, eHouses). By prefabricating and pre-testing these modular power systems off-site with an optimized layout, the solution provides a standardized, plug-and-play approach that is said to reduce time-to-market by up to 50 %, to lower construction risk, and to maximize valuable data center square footage. The efficient design can provide up to 20 % CAPEX reduction and up to 27 % lower carbon emissions by using less concrete in the space-optimized layout. | 19.11.2025 10:00:00 | Nov | news_2025-12-01_5.jpg | \images\news_2025-12-01_5.jpg | https://www.delta-emea.com/en-gb/news/delta-and-siemens-to-complement-their-power-solutions-to-help-customers-cut-data-center-deployment-time,-costs,-and-carbon-emissions | delta-emea.com |
| Multi-Purpose R& Dual-Channel Power Supply | Delivering precise DC power up to 3.6 kW, the R&S ... | 12636 | Product Release | Multi-Purpose R& Dual-Channel Power Supply | Delivering precise DC power up to 3.6 kW, the R&S NGT3600 DC power supply series from Rohde & Schwarz (R&S) is a multi-purpose solution for applications across all stages of R&D, quality assurance and production. The dual-channel R&S NGT3622 model, which offers up to 1800 W per channel, is suited for a variety of test and measurement tasks, including power system testing, DC/DC converter evaluation and the simulation of voltage profiles in accordance with test standards. It provides adjustable output voltages of up to 80 V. The two channels of the R&S NGT3622 model can be combined in series or parallel, allowing users to double either the voltage or the current. For applications requiring even more power, up to three units can be connected, delivering up to 480 V or 300 A across six channels. With a resolution of 100 µA for current and 1 mV for voltage, the instruments offer precise measurements needed for a wide range of applications. Thus, it is suited for measurement and testing tasks in various industries, including power electronics, mobile and satellite communications, renewable energies, automotive, aerospace & defense, among others. All models in the R&S NGT3600 DC power supply series are directly rack-mountable – no adapter is required. | 18.11.2025 15:30:00 | Nov | news_2025-12-01_16.jpg | \images\news_2025-12-01_16.jpg | https://www.rohde-schwarz.com/uk/about/news-press/all-news/rohde-schwarz-presents-multi-purpose-r-s-ngt3600-high-precision-dual-channel-power-supply-at-productronica-press-release-detailpage_229356-1593932.html?change_c=true | rohde-schwarz.com |
| 1200 V SiC Six-Pack Power Modules for E-Mobility Propulsion Systems | Wolfspeed announced its 1200 V SiC six-pack power ... | 12628 | Product Release | 1200 V SiC Six-Pack Power Modules for E-Mobility Propulsion Systems | Wolfspeed announced its 1200 V SiC six-pack power modules that "redefine performance benchmarks for high-power inverters". By combining its Gen 4 SiC MOSFET technology and packaging, Wolfspeed’s modules are claimed to "deliver three times more power cycling capability at operating temperature than competing solutions, and 15% higher inverter current capability in an industry-standard footprint". In terms of packaging the new modules incorporate e. g. sintered die attach, epoxy encapsulant material, and copper clip interconnects. The company claims that this enables "3X more power cycles than best-in-class competitor devices in the same footprint". The modules achieve a 22 % R<sub>DS(ON)</sub> improvement at 125 °C compared to the previous generation, while reducing turn-on energy (E<sub>ON</sub>) by approximately 60 % across operating temperatures. Additionally, the soft-body diode is said to enable 30 % lower switching losses and 50 % lower V<sub>DS</sub> overshoot during reverse recovery compared to previous generation. The modules’ industry-standard packaging enables seamless adoption without complex redesign, serving as a direct replacement for IGBT solutions in existing system architectures. This means that there will be no need for power terminal laser welding and complex coldplate mounting while maintaining compatibility with traditional power ecosystems including capacitors, cooling solutions, gate drivers, and current sensors. | 17.11.2025 07:30:00 | Nov | news_2025-12-01_8.png | \images\news_2025-12-01_8.png | https://www.wolfspeed.com/company/news-events/news/wolfspeed-launches-1200v-silicon-carbide-six-pack-power-modules-enabling-a-new-standard-of-performance-for-e-mobility-propulsion-systems/ | wolfspeed.com |
| Test System for Megawatt Charging | Vector has introduced the hardware-in-the-loop (HI... | 12635 | Product Release | Test System for Megawatt Charging | Vector has introduced the hardware-in-the-loop (HIL) test system vCTS.performance, which was developed in collaboration with EA Elektro-Automatik for testing the charging communication between electric vehicles (EV) and supply equipment (EVSE). It meets the demanding power requirements of the Megawatt Charging System (MCS), while also supporting the major charging standards CCS, MCS, NACS, GB/T and CHAdeMO. The system is now available. The vCTS.performance is a comprehensive HIL test system to ensure conformity and interoperability in charging communication between EVs and EVSEs. With scalable DC charging power of up to 3.84 MW in 60 kW increments, the system supports realistic load and endurance testing under real-world conditions. This ensures that both EVs and EVSEs meet the charging communication standards and function reliably. The system operates energy-efficient by implementing regenerative charging with energy feedback to the grid at an efficiency of over 96 %. It is optimized for running the CANoe Test Package EV and EVSE, including integration into the vTESTstudio workflow. | 12.11.2025 14:30:00 | Nov | news_2025-12-01_15.jpg | \images\news_2025-12-01_15.jpg | https://www.vector.com/int/en/products/products-a-z/hardware/vcts-performance/#c398984 | vector.com |
| E-Fuse automotive Smart Switch for Protection, Power Saving and Functional Safety | An addition to the STi2Fuse family, the VNF1248F a... | 12634 | Product Release | E-Fuse automotive Smart Switch for Protection, Power Saving and Functional Safety | An addition to the STi2Fuse family, the VNF1248F automotive e-fuse MOSFET controller from STMicroelectronics reacts within 100 µs, which is faster than a conventional wire fuse and ensures flexible and robust protection to avoid fault propagation inside the vehicle. The VNF1248F integrates the capacitive charging mode (CCM) functionality to ensure proper driving of large capacitive loads with high inrush current. In addition, a Standby-ON mode with current capability up to 600 mA and current consumption lower than 75 µA enhances the vehicle’s efficiency when in park mode. An optional external supply pin for logic reduces power consumption by 0.4 W in 48 V systems and battery-undervoltage shutdown compatible with the automotive LV124 standard ensures system stability. The chip facilitates reaching high safety-integrity levels (ASIL) in ISO 26262 functional-safety applications thanks comprehensive dedicated features like advanced fault detection and reaction, fail-safe mode and limp-home mode. There are also built-in self tests for automatic diagnosis and a dedicated pin for direct hardware control of the external MOSFET gate in case of a microcontroller fault. The VNF1248F is suitable for 12 V, 24 V, and 48 V boardnets. Other uses include as an ECU main switch and active supply for always-on circuitry in parking mode. The associated EV-VNF1248F evaluation board, simplifies integration of the intelligent fuse protection into prototype circuitry. A software package, STSW-EV-VNF1248F, is also available. | 12.11.2025 13:30:00 | Nov | news_2025-12-01_14.jpg | \images\news_2025-12-01_14.jpg | https://community.st.com/t5/developer-news/new-e-fuse-automotive-smart-switch-for-protection-power-saving/ba-p/855500 | st.com |
| 1,200 V Automotive-Grade Low-Loss Diodes | Taiwan Semiconductors introduced a series of autom... | 12618 | Product Release | 1,200 V Automotive-Grade Low-Loss Diodes | Taiwan Semiconductors introduced a series of automotive-grade, low-loss diodes offered in industry-standard packages. The 1,200 V PLA/PLD series, with ratings of 15 A, 30 A or 60 A, all feature maximum forward voltages of 1.3 V, a reverse leakage of less than 10 µA at 25 °C and junction temperatures of up to 175 °C. Available in three popular packages (ThinDPAK, D2PAK-D and TO-247BD), the 1,200V diodes enable easy drop-in replacement to improve efficiency in existing designs. Applications include three-phase AC/DC converters, server and computing power systems, EV charging stations, on-board battery chargers, Vienna rectifiers, totem pole and bridgeless topologies, inverters and UPS systems, and general-purpose rectification in high-power systems of various types. | 12.11.2025 13:30:00 | Nov | news_2025-11-15_15.jpg | \images\news_2025-11-15_15.jpg | https://www.taiwansemi.com/en/1200v-low-loss-diode/ | taiwansemi.com |
| "Innovation Award" & "Young Engineer Award" | The Semikron Danfoss Innovation Award and the Semi... | 12626 | Industry News | "Innovation Award" & "Young Engineer Award" | The Semikron Danfoss Innovation Award and the Semikron Danfoss Young Engineer Award are given for outstanding innovations in projects, prototypes, services or novel concepts in the field of power electronics in Europe, combined with notable societal benefits in form of supporting environmental protection and sustainability by improving energy efficiency and conservation of resources. Both prizes have been initiated by the SEMIKRON Foundation in 2012. The prizes are awarded in cooperation with the European ECPE Network. The deadline for submission ends on 17 January 2026! Please send your proposal resp. your application with the reference ‘Semikron Danfoss Innovation Award’ by email to Thomas Harder, General Manager of ECPE e.V., thomas.harder@ecpe.org. The receipt of your proposal will be confirmed by email in due time. | 11.11.2025 11:00:00 | Nov | news_2025-12-01_6.jpg | \images\news_2025-12-01_6.jpg | https://www.ecpe.org/index.php?eID=dumpFile&t=f&f=48382&token=e0e0cccf0ed984ef54db3627004979b936a33b40 | ecpe.org |
| High Current Four Terminal Shunt Resistors for AI Data Server Power | Stackpole Electronics’ HCSK1216 high current four ... | 12631 | Product Release | High Current Four Terminal Shunt Resistors for AI Data Server Power | Stackpole Electronics’ HCSK1216 high current four terminal shunt resistor is engineered "to deliver exceptional accuracy and efficiency in current sensing applications". The HCSK1216’s four-terminal design separates supply current and voltage sensing paths, minimizing power loss and eliminating lead resistance errors. This all-metal component combines high power handling with ultra-low resistance values, making it suitable for precision current measurement. With a footprint that occupies 75 % less space than traditional 2725-size components, the HCSK1216 is targeted for applications where power density and board space are critical. AI data servers are a prime example of environments that benefit from this advanced solution. Available in 0.3, 0.5, 1, and 2 mΩ resistance values, the HCSK1216 offers tolerances as low as 1 % and a temperature coefficient of resistance (TCR) of 50 ppm. | 11.11.2025 10:30:00 | Nov | news_2025-12-01_11.png | \images\news_2025-12-01_11.png | https://www.seielect.com/catalog/SEI-HCSK.pdf | seielect.com |
| Modular, scalable DC Power System Monitoring and Control | OmniOn Power™ is helping to redefine the rol... | 12627 | Product Release | Modular, scalable DC Power System Monitoring and Control | OmniOn Power™ is helping to redefine the role of the DC power system controller with its next-generation Pulsar 200 platform. Purpose-built for tomorrow’s connected power infrastructure, the controller unifies modular hardware, edge intelligence, and zero-trust security into a cohesive, patent-pending platform. This combination of features helps operators evolve from basic system control to intelligent and adaptive power management. From small remote sites to large centralized facilities, the Pulsar 200 scales across telecom, data center, and industrial applications, helping to The Pulsar 200 controller provides a modular, building-block-style hardware design: Hot-swappable modules connect directly or via CAN bus, allowing upgrades to be performed with negligible disruption to operations. Zero-trust security according to IEC 62443-4-2 and FIPS 140-3 is already built in – complemented by Secure Boot, hardware-backed encryption, EdgeLock® protection, and role-based access control. Dual Gigabit WAN, Wi-Fi, Bluetooth, and optional 4G/5G enable redundancy and secure site access from most locations. An optional integrated remote monitoring aggregates data from HVAC, generators, automatic transfer switches, meters, sensors, and more than 100 supported devices into one unified interface, reducing hardware clutter, service visits, and troubleshooting time. A 5-inch color touchscreen with guided setup, live schematics, and performance dashboards simplifies deployment and ongoing site management. The Pulsar 200 is available in both new system installations and as a retrofit upgrade kit, enabling customers to modernize installed bases of Infinity-M, Infinity-S, and BPS power systems without replacing existing wiring. | 11.11.2025 06:30:00 | Nov | news_2025-12-01_7.png | \images\news_2025-12-01_7.png | https://www.omnionpower.com/about/news/press-releases/omnion-power-provides-modular-scalable-dc-power-system-monitoring-and-control-with-new-pulsar-200-controller | omnionpower.com |
| 1200 V Gen3 SiC MOSFET Modules in SOT-227 | SemiQ has expanded its family of 1200 V Gen3 SiC M... | 12633 | Product Release | 1200 V Gen3 SiC MOSFET Modules in SOT-227 | SemiQ has expanded its family of 1200 V Gen3 SiC MOSFETs, launching five SOT-227 modules that offer R<sub>DS(on)</sub> values of 7.4, 14.5, and 34 mΩ. SemiQ’s GCMS modules, which feature Schottky Barrier Diodes (SBDs), are claimed to have "lower switching losses at high temperature, especially compared to non-SBDs GCMX modules". The devices target medium-voltage, high-power conversion applications, including battery chargers, photovoltaic inverters, server power supplies, and energy storage systems. All parts are screened using wafer-level gate-oxide burn-in tests exceeding 1400 V and are avalanche tested to 800 mJ (330 mJ for 34 mΩ modules). All modules feature an isolated backplate as well as direct mounts for a heat sink. The 7.4 mΩ GCMX007C120S1-E1 reduces switching losses to 4.66 mJ (3.72 mJ Turn on, 0.94 mJ Turn off) and has a body diode reverse recovery charge of 593 nC. Their junction-to-case thermal resistance ranges from 0.23°C/W for the 7.4 mΩ MOSFET module to 0.70 °C/W for the 34 mΩ MOSFET module. | 10.11.2025 12:30:00 | Nov | news_2025-12-01_13.jpg | \images\news_2025-12-01_13.jpg | https://semiq.com/semiq-expands-1200-v-gen3-sic-mosfet-line-with-launch-of-7-4-14-5-and-34-m%cf%89-sot-227-modules/ | semiq.com |
| GaN Technology Licensed to Accelerate U.S.-Manufactured Power Portfolio | GlobalFoundries (GF) announced that it has entered... | 12605 | Industry News | GaN Technology Licensed to Accelerate U.S.-Manufactured Power Portfolio | GlobalFoundries (GF) announced that it has entered into a technology licensing agreement with TSMC for 650V and 80V Gallium Nitride (GaN) technology. This strategic move will accelerate GF’s next generation of GaN products for datacenter, industrial and automotive power applications and provide U.S.-based GaN capacity for a global customer base. As traditional silicon CMOS technologies hit their performance limits, GaN is emerging as the next-generation solution for meeting the increasing demand for higher efficiency, power density and compactness in power systems. GF is developing a comprehensive GaN portfolio, including high-performance 650V and 80V technologies aimed at enabling electric vehicles, datacenters, renewable energy systems and fast-charging electronics. GF’s GaN solutions are designed for harsh environments, with a holistic approach to GaN reliability that spans process development, device performance and application integration. GF will qualify the licensed GaN technology at its manufacturing facility in Burlington, Vermont, leveraging the site’s expertise in high-voltage GaN-on-Silicon technology to accelerate volume production for customers seeking next-generation power devices. Development is set for early 2026, with production to begin later in the year. | 10.11.2025 07:00:00 | Nov | news_2025-11-15_2.jpg | \images\news_2025-11-15_2.jpg | https://gf.com/gf-press-release/globalfoundries-licenses-gan-technology-from-tsmc-to-accelerate-u-s-manufactured-power-portfolio-for-datacenter-industrial-and-automotive-custo/ | gf.com |
| EPCIA President appointed | According to Murata Manufacturing, Christophe Pott... | 12608 | People | EPCIA President appointed | According to Murata Manufacturing, Christophe Pottier, Vice President of Sales for Murata Europe, has been appointed as President of the European Passive Components Industry Association (EPCIA), effective immediately. Mr. Pottier brings over three decades of deep experience within the electronics industry to his new role, with a strong focus on strategic sales and automotive sector initiatives. His experience at Murata, where he has contributed across multiple domains, including strategic sales in telecom and collaborative initiatives in the automotive industry, has shaped his understanding of how these components quietly power advanced technologies. As EPCIA President, Mr. Pottier’s mission is to promote a stronger, more connected passive components ecosystem across Europe by focusing on three key areas. The first area is elevating the role of passive components as these elements regulate, protect, and optimize electronic signals, making them indispensable to chip performance and system reliability. The second focal point is fostering collaboration which means working with adjacent industries to meet demands for miniaturization, high-speed data, and energy efficiency as integration into semiconductor packaging accelerates. Strengthening ties with research institutes is the third key area: Driving innovation in materials science, sustainability, and advanced manufacturing through partnerships with Europe’s academic and research institutions. | 07.11.2025 10:00:00 | Nov | news_2025-11-15_5.jpg | \images\news_2025-11-15_5.jpg | https://www.murata.com/en-eu/news/other/other/2025/1107 | murata.com |
| Job Promotion in Solutions for Power Electronics | Indium Corporation has promoted Joseph Hertline to... | 12610 | People | Job Promotion in Solutions for Power Electronics | Indium Corporation has promoted Joseph Hertline to Senior Product Manager, Engineered Solder Materials (ESM). In his new role, as Senior Product Manager, Hertline is now responsible for driving the growth of Indium Corporation’s global ESM initiatives through the development of marketing strategies. He will continue to lead the company’s efforts in the power electronics application segment with a broader scope of products, applications, and customer segments. He will also continue to lead ESM Application Engineering efforts for all ESM product lines. Hertline has more than a decade of experience in engineering and product management within the electronics industry and joined Indium Corporation in 2020 as Product Manager, Power Electronics. | 06.11.2025 12:00:00 | Nov | news_2025-11-15_7.jpg | \images\news_2025-11-15_7.jpg | https://www.indium.com/press-releases/indium-corporation-promotion-reflects-hertlines-leadership-in-advancing-innovative-soldering-solutions-for-power-electronics/ | indium.com |
| MicroModule Series expanded | The MagI³C-VDMM power module product family f... | 12616 | Product Release | MicroModule Series expanded | The MagI³C-VDMM power module product family from Würth Elektronik continues to grow: The three variable step-down MicroModules for input voltages from 2.5 V to 5.5 V and adjustable output voltages from 0.6 V to 4 V are available in pin-compatible 1 A, 2 A, and 3 A versions. The modules achieve a peak efficiency of up to 96 %. With a quiescent current of 4 µA,they are also suitable for battery-powered applications. MagI³C-VDMM power modules represent a fully integrated DC/DC power supply that includes a switching regulator with integrated MOSFETs, as well as a controller, compensation, and a shielded inductor – all in a single package. The modules, which can replace linear regulators, are equipped with integrated protection circuits. They protect against thermal overload and electrical damage caused by overcurrent, short circuit and undervoltage. Depending on the load, they automatically switch between pulse frequency modulation (PFM) and pulse width modulation (PWM) modes. These mode transitions allows optimal efficiency and output voltage ripple at all load currents. To save energy, the power module can be set to resting mode using an additional pin. Together, the Power-GOOD and EN functions also enable power sequencing. These MagI³C-VDMM power modules measure 3.5 x 3.5 x 1.5 mm³ in an LGA-9 package. The devices are suitable for point-of-load DC/DC applications, industrial and medical equipment, test and measurement devices, for powering DSPs, FPGAs, MCUs and MPUs as well as I/O interfaces. In the operating temperature range from -40 °C to 105 °C the modules comply with EN55032 (CISPR-32) Class B for radiated emissions. | 06.11.2025 11:30:00 | Nov | news_2025-11-15_13.jpg | \images\news_2025-11-15_13.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=expansion-magi3c-vdmm | we-online.com |
| High-Current 3×3 mm² Inductors | Coilcraft’s KTA3030 Series molded power inductors ... | 12632 | Product Release | High-Current 3×3 mm² Inductors | Coilcraft’s KTA3030 Series molded power inductors offer specifically low inductance values starting from 40 nH, making them well-suited for today’s low-voltage, high-current DC/DC converters. Designed for single-phase and multiphase VRMs and PoL regulators, the KTA3030 delivers fast transient response, high current handling, and low DC as well as AC losses in a compact package. The AEC-200 qualified and RoHS-compliant series may be used with CPUs, GPUs, ASICs, and SoCs in servers, data centers, as well as automotive power applications. The package measures 3.2 × 3.0 × 3.2 mm³. | 05.11.2025 11:30:00 | Nov | news_2025-12-01_12.jpg | \images\news_2025-12-01_12.jpg | https://www.coilcraft.com/en-us/products/power/shielded-inductors/molded-inductor/kta/kta3030/ | coilcraft.com |
| Reference Design combines Power, Sensing, and Control for Robot Joints and UAVs – fitting in A1 Robot Motor | Efficient Power Conversion Corporation (EPC) launc... | 12614 | Product Release | Reference Design combines Power, Sensing, and Control for Robot Joints and UAVs – fitting in A1 Robot Motor | Efficient Power Conversion Corporation (EPC) launched the EPC91120, a 3-phase brushless DC (BLDC) motor drive inverter optimized for humanoid robot joints. "Featuring EPC’s EPC23102 ePower™ Stage IC, the EPC91120 delivers superior efficiency, high power density, and precise motion control in a compact 32 mm-diameter footprint designed to integrate directly within robotic motor assemblies", the company reports. The EPC91120 evaluation board integrates three EPC23102 GaN monolithic half-bridge ICs with an on-board microcontroller, current and voltage sensing, magnetic encoder interface, and RS485 communication. The system operates from 15 V to 55 V<sub>DC</sub>, delivering up to 21 A peak (15 A<sub>RMS</sub>) continuous current and 42 A peak (30 A<sub>RMS</sub>) pulsed. With a 100 kHz PWM switching frequency and only 50 ns dead time, the EPC91120 achieves exceptional efficiency and dynamic performance, ideal for humanoid robot joint motors and other high-precision motion applications. The board was specifically designed to fit the mechanical dimensions of the Unitree A1 robot motor, enabling direct evaluation in real-world robotic systems. Under natural convection cooling at 26 °C ambient, the EPC91120 delivers 7 ARMS per phase without a heatsink and up to 15 A<sub>RMS</sub> when integrated into the humanoid joint motor casing as a heatsink. Experimental results demonstrate total system efficiencies exceeding 80 % from DC input to mechanical output, validating the design for high-torque, low-weight robotic joints. | 05.11.2025 09:30:00 | Nov | news_2025-11-15_11.jpg | \images\news_2025-11-15_11.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3247/epc%e2%80%99s-gan-power-ics-enable-a-new-era-of-robotic-agility | epc-co.com |
| MOSFET for AI Servers in 5 × 6 mm² Package | ROHM has developed the 100 V power MOSFET - RS7P20... | 12629 | Product Release | MOSFET for AI Servers in 5 × 6 mm² Package | ROHM has developed the 100 V power MOSFET - RS7P200BM, which is claimed to achieve "industry-leading SOA in a 5060-size (5.0 mm × 6.0 mm) package". This product is well-suited for hot-swap circuits in AI servers using 48 V power supplies as well as for industrial power supplies requiring battery protection. The device achieves an on-resistance of 4.0 mΩ (conditions: V<sub>GS</sub> = 10 V, I<sub>D</sub> = 50 A, T<sub>a</sub> = 25 °C) while maintaining a SOA of 7.5 A at a pulse width of 10 ms and 25 A at 1 ms under operating conditions of V<sub>DS</sub> = 48 V. This balance of low on-resistance and wide SOA, typically a trade-off relationship, helps suppress heat generation during operation, thereby improving server power supply efficiency, reducing cooling load, and lowering electricity costs. Typical applications are 48 V system AI servers and data center power hot-swap circuits, 48 V system industrial power supplies (forklifts, power tools, robots, fan motors, etc.), battery-powered industrial equipment such as AGVs (Automated Guided Vehicles) and UPS, emergency power systems (battery backup units). | 05.11.2025 08:30:00 | Nov | news_2025-12-01_9.jpg | \images\news_2025-12-01_9.jpg | https://www.rohm.com/news-detail?news-title=2025-11-25_news_mosfet&defaultGroupId=false | rohm.com |
| Win a Power Analyzer Set for your Research Lab | Just in time for Christmas, HIOKI EUROPE GmbH is g... | 12604 | Industry News | Win a Power Analyzer Set for your Research Lab | Just in time for Christmas, HIOKI EUROPE GmbH is giving away a complete Power Analyzer Set with a retail value of around EUR 35,000 consisting of ex-demo devices. This special giveaway campaign is open exclusively to universities and research institutions across the European Union specialising in power electronics or energy efficiency. Are these your areas of expertise? Join the competition at shop.hioki.eu/win-PW6001-Power-Analyzer by briefly describing how you would use power analysis in your application – the most convincing idea wins! Among all participants, the HIOKI jury will award a Power Analyzer Set*. With a bit of luck, you could find this special present under your institution’s Christmas tree this year. Deadline for entries: 19 December 2025. | 31.10.2025 06:00:00 | Oct | news_2025-11-15_1.jpg | \images\news_2025-11-15_1.jpg | https://shop.hioki.eu/win-PW6001-Power-Analyzer | hioki.eu/win |
| Vertical GaN Semiconductors | As global energy demand surges from AI data center... | 12621 | Product Release | Vertical GaN Semiconductors | As global energy demand surges from AI data centers, electric vehicles, and other energy intensive applications, onsemi has introduced vertical gallium nitride (vGaN) power semiconductors, setting a new benchmark for power density, efficiency and ruggedness for these applications. These next-generation GaN-on-GaN power semiconductors conduct current vertically through the compound semiconductor, enabling higher operating voltages and faster switching frequencies, leading to energy savings to deliver smaller and lighter systems across AI data centers, electric vehicles (EVs), renewable energy, and aerospace, defence and security. onsemi’s vGaN technology is designed to handle high voltages in a monolithic die – 1,200 volts and beyond – switching high currents at high frequency with superior efficiency. High end power systems built with this technology can reduce losses by almost 50% and by operating at higher frequencies can also reduce the size, including passives like capacitors and inductors by a similar amount. Additionally, compared to commercially available lateral GaN, vGaN devices are approximately three times smaller. This makes onsemi’s vGaN ideal for critical high-power applications where power density, thermal performance and reliability are paramount. | 30.10.2025 16:30:00 | Oct | news_2025-11-15_18.jpg | \images\news_2025-11-15_18.jpg | https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-unveils-vertical-gan-semiconductors-a-breakthrough-for-ai-and-electrification | onsemi.com |
| N-Channel Power MOSFETs | Toshiba Electronics Europe launches six products f... | 12620 | Product Release | N-Channel Power MOSFETs | Toshiba Electronics Europe launches six products featuring the DTMOSVI 600V series of N-channel power MOSFET chips, mounted in a 4-pin TO-247-4L(X) package. These TKxxxZ60Z1 devices are designed to significantly reduce switching loss. They are suitable for a range of applications, including servers in data centres, SMPS for industrial equipment, and power conditioners for photovoltaic generators. The DTMOSVI 600V series, featured in these products, has been engineered with an optimised gate design and process. This optimisation has resulted in a reduction of the drain-source on-resistance per unit area by approximately 13 %. Furthermore, the crucial figure of merit (FOM) for MOSFET performance, R<sub>DS(ON)</sub> × gate-drain charge (Q<sub>gd</sub>), has been reduced by approximately 52 % compared to Toshiba’s previous generation DTMOSIV-H series products with the same 600 V drain-source voltage (V<sub>DS</sub>) ratings. For example, the TK024Z60Z1 has a typical R<sub>DS(ON)</sub> of 20 mΩ and Q<sub>gd</sub> of 37 nC. This translates into a better trade-off between conduction loss and switching loss, directly contributing to the efficiency of switched-mode power supplies. These products incorporate a four-pin TO-247-4L(X) package, which includes a dedicated signal source terminal for the gate drive. However, it is important to note that the TO-247-4L(X) package has a different appearance and dimensions compared to Toshiba’s existing four-pin TO-247-4L package, as it features the cavity between the drain and source pins to increase creepage distance. | 30.10.2025 15:30:00 | Oct | news_2025-11-15_17.jpg | \images\news_2025-11-15_17.jpg | https://toshiba.semicon-storage.com/eu/company/news/2025/10/mosfet-20251030-1.html | toshiba.semicon-storage.com |
| APEC 2026 Early Bird Registration Now Open | The registration for APEC 2026, which will take in... | 12591 | Event News | APEC 2026 Early Bird Registration Now Open | The registration for APEC 2026, which will take in San Antonio, Texas (USA) on March 22-26, 2026, is now open. The IEEE Applied Power Electronics Conference and Exposition (APEC) offers a wide range of educational and social activities. APEC attendees can choose the registration category that best fits their needs and interests. Early bird registration will close on January 26, 2026. | 30.10.2025 13:00:00 | Oct | news_2025-11-01_8.jpg | \images\news_2025-11-01_8.jpg | https://apec-conf.org/attendees/registration/ | apec-conf.org |
| 650 V Super Junction TOLL Package Products with Integrated Kelvin Source | Magnachip Semiconductor released two 650 V Super J... | 12615 | Product Release | 650 V Super Junction TOLL Package Products with Integrated Kelvin Source | Magnachip Semiconductor released two 650 V Super Junction MOSFET (SJ MOSFET) products, adopting the TO-Leadless (TOLL) package, that are designed to meet the high-power and high-current requirements of premium consumer electronics such as premium TVs, gaming monitors, AI laptop adaptors and chargers. Current Magnachip products with TOLL packaging, such as the 80 V – 200 V eXtreme Trench MOSFETs, use a 3-pin configuration. The 650 V SJ MOSFETs have a 4-pin Kelvin configuration, which minimizes the effects of parasitic inductance on the gate-source return path, thereby improving switching stability and overall power efficiency by reducing gate oscillation (ringing). Compared to a conventional D²PAK package, the 4-pin TOLL package delivers more than a 100 % increase in current capability, a 24 % reduction in footprint and a 48 % reduction in height. Therefore, the 4-pin TOLL package is suitable for smaller PCB and high-power density applications, which demand high power efficiency and effective heat dissipation performance. For example, the MMTB65R099RFRH device suited for a drain-source voltage of 650 V operates with a maximum R<sub>DS(on)</sub> of 99 mΩ. | 30.10.2025 10:30:00 | Oct | news_2025-11-15_12.jpg | \images\news_2025-11-15_12.jpg | https://www.magnachip.com/magnachip-launches-650v-super-junction-toll-package-products-with-integrated-kelvin-source/ | magnachip.com |
| Vertical GaN Architecture built on GaN-on-GaN Technology | onsemi has introduced vertical gallium nitride (vG... | 12584 | Industry News | Vertical GaN Architecture built on GaN-on-GaN Technology | onsemi has introduced vertical gallium nitride (vGaN) power semiconductors. These next-generation GaN-on-GaN devices conduct current vertically through the compound semiconductor, enabling higher operating voltages and faster switching frequencies, leading to energy savings to deliver smaller and lighter systems across AI data centers, electric vehicles (EVs), renewable energy, and aerospace, defence and security. Developed and manufactured at onsemi’s fab in Syracuse, NY, onsemi holds over 130 global patents covering a range of fundamental process, device design, manufacturing and systems innovations for vertical GaN technology. onsemi’s vGaN technology is designed to handle high voltages in a monolithic die – 1,200 volts and beyond – switching high currents at high frequency with superior efficiency. High end power systems built with this technology can reduce losses by almost 50% and by operating at higher frequencies can also reduce the size, including passives like capacitors and inductors by a similar amount. Additionally, compared to commercially available lateral GaN, vGaN devices are approximately three times smaller. This makes onsemi’s vGaN ideal for critical high-power applications where power density, thermal performance and reliability are paramount. | 30.10.2025 06:00:00 | Oct | news_2025-11-01_1.jpg | \images\news_2025-11-01_1.jpg | https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-unveils-vertical-gan-semiconductors-a-breakthrough-for-ai-and-electrification | onsemi.com |
| Company Acquisition | Littlefuse announced a definitive agreement to acq... | 12607 | Industry News | Company Acquisition | Littlefuse announced a definitive agreement to acquire Basler Electric Company for a cash consideration of approximately $350M, subject to customary adjustments. Basler is a designer and manufacturer of electrical control and protection solutions for industrial markets including grid and utility infrastructure, power generation and data center. With three manufacturing facilities in Highland, IL/USA, Taylor, TX/USA and Piedras Negras, Mexico, Basler’s technologies regulate and protect mission-critical equipment. | 28.10.2025 09:00:00 | Oct | news_2025-11-15_4.png | \images\news_2025-11-15_4.png | https://investor.littelfuse.com/news/news-details/2025/Littelfuse-to-Acquire-Basler-Electric-Enhancing-High-Growth-Industrial-Market-Positioning/default.aspx | littelfuse.com |
| Reed Relais switches up to 80 W | Pickering Electronics has upgraded its Series 144 ... | 12613 | Product Release | Reed Relais switches up to 80 W | Pickering Electronics has upgraded its Series 144 high power reed relays switching up to 80 W while stacking on a 0.25-inch pitch to include a new variant with an electrostatic shield between the switch and the coil to help minimize noise. Electrostatic screening protects against noise that can otherwise occur between the coil drive and high voltage circuits. This new screening option is in addition to Pickering’s internal mu-metal screen, which helps eliminate problems that would otherwise be experienced due to magnetic interaction when devices are closely stacked. Miniature, ultra-high packing density reed relays usually have a switching rating of up to 10 W and 0.5 A, but some applications demand higher switching power and higher carry current specifications. Suitable applications for the Series 144 include mixed signal semiconductor testers, photovoltaic and EV charging, mining gas analysis, medical electronics, in-circuit test equipment, and high voltage instrumentation. As dry reed relays, Series 144 offers an eco-friendlier option than mercury-wetted reed relays. For many applications, it also provides a superior alternative to electromechanical relays (EMRs), where its low-level performance and high isolation significantly improve efficiency and reliability. And compared to EMRs, reed relays deliver faster switching speeds and longer mechanical lifespans. 1 Form A, 2 Form A and 1 Form B configurations are available, with 5 V, 12 V or 24 V coils offered, all with optional internal diode protection. Additional build options are also available on request, including many pin configurations. | 28.10.2025 08:30:00 | Oct | news_2025-11-15_10.png | \images\news_2025-11-15_10.png | https://www.pickeringrelay.com/eliminate-noise-in-dense-high-power-designs-with-pickerings-new-electrostatic-shielding/ | pickeringrelay.com |
| Report: Graphene in electronic Applications | Graphene was initially celebrated as a sci-fi mate... | 12609 | Industry News | Report: Graphene in electronic Applications | Graphene was initially celebrated as a sci-fi material destined to transform electronics, quantum devices, and futuristic sensors. While expectations soared, commercial reality proved more modest. Rather than enabling transparent phones or levitating trains, graphene first succeeded in practical roles such as enhancing polymer composites in tires, coatings, and sporting goods through improved strength and conductivity. Now, with advances in manufacturing and renewed interest from major electronics and energy companies, the question resurfaces: are we finally approaching the breakthrough era once promised? IDTechEx has now released a report, dubbed "Graphene & 2D Materials 2026-2036: Technologies, Markets, Players", which includes granular 10-year graphene market forecasts, based on profiles of 90+ key players and leverages extensive coverage of many end-use markets for graphene. Graphene is increasingly used in consumer electronics for thermal management, leveraging its exceptional heat conductivity to improve device cooling and reliability. Beyond passive materials, its high surface area and conductivity also make it a strong candidate for energy storage applications, particularly in next-generation batteries and supercapacitors, where faster charging and longer lifetimes are sought. IDTechEx believes that thermal management applications is a key early area for graphene adoption. There is increasing demand for high-performance heat spreaders, and the graphene properties and morphology are well-suited. The thermal conductivity of carbon materials tend to be higher than that seen in metals, with graphene oxide (GO) reporting a thermal conductivity in excess of 3,000 W/m·K. | 27.10.2025 11:00:00 | Oct | news_2025-11-15_6.png | \images\news_2025-11-15_6.png | https://www.idtechex.com/en/research-report/graphene-and-2d-materials/1121 | idtechex.com |
| Ruggedized 6 W DC/DC Converters with 8:1 Inputs | The TEC 6UI series from TRACO power comprises isol... | 12617 | Product Release | Ruggedized 6 W DC/DC Converters with 8:1 Inputs | The TEC 6UI series from TRACO power comprises isolated DC/DC converters featuring an 8:1 input range. These converters are engineered to seamlessly replace and serve as an alternative to existing 2:1 and 4:1 input converter series. With an input voltage range of 9 to 75 V<sub>DC</sub>, the TEC 6UI supports a broad spectrum of standard bus voltages, reducing the need for multiple model variants within a single application. Each model includes built-in protection such as short circuit protection, overcurrent limitation, undervoltage lockout, and remote-control functionality. The converters are certified for an operating temperature range of -40 °C to +80 °C in accordance with IEC/EN/UL 62368-1 and are capable of functioning at altitudes up to 5000 m. Housed in a SIP-8 plastic case, the TEC 6UI series is well-suited for space-constrained applications. Available in both single and dual output configurations with an I/O isolation of 1600 V<sub>DC</sub>, these converters are suited for a wide range of industrial applications. | 24.10.2025 12:30:00 | Oct | news_2025-11-15_14.jpg | \images\news_2025-11-15_14.jpg | https://www.tracopower.com/de/deu/tec6ui | tracopower.com |
| Radiation-hardened Buck Controller with integrated Gate Drive | Infineon Technologies announced "the industry’s fi... | 12630 | Product Release | Radiation-hardened Buck Controller with integrated Gate Drive | Infineon Technologies announced "the industry’s first radiation-hardened (rad-hard) buck controller with an integrated gate drive". Designed for Point of Load (PoL) power rails in commercial space systems and other extreme environments, the device is particularly well-suited for distributed satellite power systems and digital processing payloads, including FPGA and ASIC systems. The RIC70847 integrates a radiation hardened 17.1 V buck controller with a 5 V (output) half-bridge gate drive and is targeted for applications with a power input range of 4.75 V to 15 V and power output range of 0.6 V to 5.25 V. It is designed to work seamlessly with logic-level transistors, such as Infineon’s rad-hard R8 power FET. The device meets the MIL spec temperature range from -55 °C to 125 °C as well as the stringent requirements of applications that demand a Total Ionizing Dose (TID) rating of up to 100 krad (Si) and Single Event Effects (SEE) characterized up to a Linear Energy Transfer (LET) of 81.9 MeV·cm²/mg. | 21.10.2025 09:30:00 | Oct | news_2025-12-01_10.jpg | \images\news_2025-12-01_10.jpg | https://www.infineon.com/market-news/2025/INFPSS202510-012 | infineon.com |
| 10 MHz TMR Current Sensor for Protection and Control of Wide Bandgap Power Electronics | Allegro MicroSystems introduced "the industry’s fi... | 12595 | Product Release | 10 MHz TMR Current Sensor for Protection and Control of Wide Bandgap Power Electronics | Allegro MicroSystems introduced "the industry’s first commercially available magnetic current sensor to achieve 10 MHz bandwidth featuring Allegro’s advanced XtremeSense™ TMR (tunneling magnetoresistance) technology". The ACS37100 TMR current sensor helps power system designers master the control signal chain and unlock the full potential of fast-switching GaN and SiC FETs. Tailored to the needs of electric vehicles (xEVs), clean energy power conversion systems, and AI data center power supplies, the automotive grade ACS37100 achieves a 50 ns response time, providing the high-fidelity data needed for optimal efficiency and protection in demanding high-frequency applications. At sub-megahertz frequencies, conventional magnetic current sensors lack the speed and precision to provide the high-fidelity, real-time data required for stable control and protection loops. This can leave advanced systems vulnerable to damage and may prevent them from operating at their full potential. The ACS37100 is engineered to solve this control challenge. The device delivers a noise of 26 mA<sub>RMS</sub> across the full 10 MHz bandwidth. Integrated reinforced isolation is 5 kV for 60 seconds per UL 62368-1 while the internal conductor resistance is specified with 1.2 mΩ. | 21.10.2025 07:30:00 | Oct | news_2025-11-01_12.png | \images\news_2025-11-01_12.png | https://www.allegromicro.com/en/about-allegro/newsroom/press-releases/2025/industrys-first-production-ready-10-mhz-tmr-current-sensor | allegromicro.com |
| Bosch Global Supplier Award | Isabellenhütte has received a Bosch Global Supplie... | 12593 | Industry News | Bosch Global Supplier Award | Isabellenhütte has received a Bosch Global Supplier Award and thus ranks globally among the best suppliers of Bosch, the supplier of technology and services. Isabellenhütte received the award in the category "Materials and components". From its roughly 35,000 suppliers, Bosch singled out 49 suppliers from 14 countries for an award. This is the 19th time that the Bosch Group has rewarded outstanding performance by its suppliers – notably as concerns quality, costs, sustainability, and innovation. "This special award recognizes Isabellenhütte as an important development partner for Bosch and is a great tribute to all employees who work daily to continuously improve our processes and the quality of our products. We will continue to focus our strategic orientation on customer orientation and innovation as well as absolute reliability and competitiveness," emphasizes Thilo Gleisberg, CTO at Isabellenhütte. | 17.10.2025 15:00:00 | Oct | news_2025-11-01_10.jpg | \images\news_2025-11-01_10.jpg | https://www.isabellenhuette.com/news/bosch-global-supplier-award-2025 | isabellenhuette.com |
| Reflow-suitable Package for SiC Devices in High-Power Applications | High-power applications such as electric vehicle c... | 12612 | Product Release | Reflow-suitable Package for SiC Devices in High-Power Applications | High-power applications such as electric vehicle charging, battery energy storage systems, and commercial, construction and agricultural vehicles (CAVs) are driving the demand for higher system-level power density and efficiency to meet increasing performance expectations. At the same time, these requirements introduce new design challenges, including reliable operation under harsh environmental conditions, robustness against transient overloads, and optimized overall system performance. To address these challenges, Infineon Technologies has launched the CoolSiC™ MOSFETs 1400 V G2 in the TO-247PLUS-4 Reflow package. The devices support higher DC-link voltages and enable improved thermal performance, reduced system size and enhanced reliability. The package technology supports reflow soldering at 260 °C for up to three cycles and enables reliable operation with junction temperatures up to 200 °C. This 1400 V voltage class provides additional margin for faster switching and simplifies protection measures against overvoltage. This eliminates the need for power derating and contributes to overall system robustness. The CoolSiC MOSFETs 1400 V G2 in the TO-247PLUS-4 Reflow package are available in R<sub>DS(on)</sub> classes from 6 to 29 mΩ and suitable for applications where high power density is crucial. Infineon also offers CoolSiC MOSFETs 1400 V in a TO-247-4 package with high creepage. R<sub>DS(on)</sub> classes for this portfolio range from 11 to 38 mΩ. | 17.10.2025 07:30:00 | Oct | news_2025-11-15_9.jpg | \images\news_2025-11-15_9.jpg | https://www.infineon.com/market-news/2025/INFGIP202510-010 | infineon.com |
| Common Mode Choke for Power Line Noise Attenuation | Bourns released its Model SRF1709 Common Mode Chok... | 12619 | Product Release | Common Mode Choke for Power Line Noise Attenuation | Bourns released its Model SRF1709 Common Mode Choke, featuring a ferrite toroid core for low radiation making it an effective power line noise attenuation solution. This choke provides an inductance of 3.5 mH with a current rating of 2.5 A and an operating temperature range from –40 °C to +85 °C. It is designed to provide effective EMI suppression from both incoming and outgoing paths within the system, making suitable for consumer, industrial and other electronic application designs. | 15.10.2025 14:30:00 | Oct | news_2025-11-15_16.jpg | \images\news_2025-11-15_16.jpg | https://www.bourns.com/news/press-releases/pr/2025/10/15/bourns-releases-high-inductance-common-mode-choke-as-effective-power-line-noise-attenuation-solution | bourns.com |
| Long-term Contract for green Electricity Supply | Infineon Technologies has concluded Power Purchase... | 12588 | Industry News | Long-term Contract for green Electricity Supply | Infineon Technologies has concluded Power Purchase Agreements (PPA) with PNE and Statkraft for green electricity. Over the next ten years, Infineon will purchase green electricity from PNE AG’s Schlenzer and Kittlitz III wind farms in Brandenburg in Germany to supply its sites in Dresden, Regensburg, Warstein and Neubiberg near Munich. Seven turbines in the PNE AG wind farms offer a total capacity of 24 MW and a contracted electricity volume of 550 GWh. Statkraft will additionally supply German locations with renewable electricity from solar parks in Spain with a total volume of 220 GWh over the next five years. Infineon aims to switch its global operations to 100 % green electricity this year and become CO<sub>2</sub>-neutral for Scope 1 and 2 emissions by 2030. Infineon has been using green electricity in Germany and Europe since the 2021 fiscal year. By concluding Power Purchase Agreements for specific wind and solar power plants in Brandenburg and Spain, the company is now securing its long-term green electricity requirements and supporting the expansion of renewable energies. | 15.10.2025 10:00:00 | Oct | news_2025-11-01_5.jpg | \images\news_2025-11-01_5.jpg | https://www.infineon.com/press-release/2025/INFXX202510-006 | infineon.com |
| 100 V automotive-qualified Transistors | Infineon launched the CoolGaN™ automotive tr... | 12597 | Product Release | 100 V automotive-qualified Transistors | Infineon launched the CoolGaN™ automotive transistor 100 V G1 family for production and has started supplying samples of its pre-production product range qualified for automotive applications in accordance with AEC-Q101, including high-voltage (HV) CoolGaN automotive transistors and bidirectional switches. Particularly with the shift from 12 V to 48 V systems in software-defined vehicles, GaN- based power conversion systems allow for improved performance but also enable advanced features such as steer-by-wire and real-time chassis control, improving ride comfort and handling. Infineon’s family of 100 V CoolGaN transistors can be used for applications such as zone control & main DC/DC converters, high-performance auxiliary systems, and Class D Audio amplifiers. | 15.10.2025 09:30:00 | Oct | news_2025-11-01_14.jpg | \images\news_2025-11-01_14.jpg | https://www.infineon.com/market-news/2025/INFPSS202510-007 | infineon.com |
| Vertical GaN Sample Prototypes – already in 2025! | Vertical Semiconductor (Vertical), a semiconductor... | 12606 | Industry News | Vertical GaN Sample Prototypes – already in 2025! | Vertical Semiconductor (Vertical), a semiconductor company spun out of the Massachusetts Institute of Technology (MIT), received $11 million in seed funding led by Playground Global to help accelerate development of vertical GaN transistors. Additional investors include JIMCO Technology Fund, milemark•capital, and Shin-Etsu Chemical. The company’s technology is said to reduce energy loss, cut heat, and simplify infrastructure, improving efficiency by up to 30% and enabling a 50% smaller power footprint in AI data center racks. Vertical Semiconductor has demonstrated its vertical GaN technology on 8-inch wafers using standard silicon CMOS semiconductor manufacturing methods, enabling seamless integration with existing process technology and making it ready for real-world deployment for devices from 100 V to 1.2 kV. With a prototype in development and commercial milestones ahead, the company plans to start early sampling for its first prototype packaged devices by the end of the year and a fully integrated solution in 2026. | 15.10.2025 08:00:00 | Oct | news_2025-11-15_3.png | \images\news_2025-11-15_3.png | https://www.verticalsemi.com/news/vertical-semiconductor-raises-11-million-to-deliver-the-next-wave-of-power-for-ai-chips-and-data-centers | verticalsemi.com |
| Digital Power Joint Lab | GigaDevice has launched a Digital Power Joint Lab ... | 12585 | Industry News | Digital Power Joint Lab | GigaDevice has launched a Digital Power Joint Lab in collaboration with Navitas Semiconductor. By combining GigaDevice’s GD32MCU expertise with Navitas’ advantages in high-frequency, high-speed, and highly integrated GaN technologies, and its GeneSiC™ technology leveraging ‘trench-assisted planar’ technology, the collaboration aims to deliver intelligent and high-efficiency digital power solutions for emerging markets such as AI data centers, photovoltaic inverters, energy storage systems, charging infrastructure, and electric vehicles. Before its official launch, the lab achieved several important technological milestones, including 4.5 kW and 12 kW server power supply solutions and a 500 W single-stage PV micro-inverter. The lab will focus on developing comprehensive system-level reference designs and application-specific solutions to enable smarter, greener, and more energy-efficient power systems across data centers, renewable energy, and electric mobility. | 15.10.2025 07:00:00 | Oct | news_2025-11-01_2.jpg | \images\news_2025-11-01_2.jpg | https://www.gigadevice.com/about/news-and-event/news/gigadevice-and-navitas-unveil-digital-power-joint-lab | gigadevice.com |
| Gate Driver simplifies SiC and IGBT Designs | Littelfuse released the IX4352NEAU automotive-qual... | 12598 | Product Release | Gate Driver simplifies SiC and IGBT Designs | Littelfuse released the IX4352NEAU automotive-qualified low-side gate driver designed to meet the growing demands of SiC MOSFET and IGBT control in electric vehicle (EV) powertrain and DC/DC converter applications. According to the company the IX4352NEAU is "the first AEC-Q100-qualified low-side gate driver to offer an integrated and adjustable negative gate drive bias, eliminating the need for an external negative voltage rail or the costly DC/DC converters typically required to suppress parasitic turn-on of high-speed power devices". It offers an adjustable negative gate drive bias (down to -10 V) which Improves dv/dt immunity, suppresses parasitic turn-on, and ensures faster turn-off of SiC MOSFETs and IGBTs. Furthermore, it offers 9 A peak source and sink drive capability (separate pins), integrated protections and 3.3 V TTL/CMOS-compatible inputs. The devices are AEC-Q100 qualified. | 14.10.2025 10:30:00 | Oct | news_2025-11-01_15.jpg | \images\news_2025-11-01_15.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/new-littelfuse-gate-driver-simplifies-sic-and-igbt-designs-with-integrated-adjustable-negative-bias | littelfuse.com |
| Web-Based Tools for Power Design | Analog Devices launched ADI Power Studio, a compre... | 12586 | Industry News | Web-Based Tools for Power Design | Analog Devices launched ADI Power Studio, a comprehensive family of products that offers modeling, component recommendations and efficiency analysis with simulation. In addition, ADI is introducing two web-based tools with a modernized user experience under the Power Studio umbrella: ADI Power Studio Planner and ADI Power Studio Designer. These new tools, together with the full ADI Power Studio portfolio, including LTspice®, SIMPLIS®, LTpowerCAD®, LTpowerPlanner®, EE-Sim®, LTpowerPlay® and LTpowerAnalyzer™, streamline the entire power system design process. The Power Studio tools support engineers from initial concept through measurement and evaluation, empowering engineers to design with confidence and efficiency. ADI Power Studio Planner is a web-based tool for system-level power tree planning, which gives engineers an interactive view of their system architecture. ADI Power Studio Designer is also a web-based tool, however, for IC-level power supply design. It provides component recommendations, performance estimates, and tailored efficiency analysis. These tools represent the first phase of ADI’s vision to deliver a fully connected power design workflow for customers. | 14.10.2025 08:00:00 | Oct | news_2025-11-01_3.png | \images\news_2025-11-01_3.png | https://www.analog.com/en/newsroom/press-releases/2025/10-14-2025-adi-launches-adi-power-studio-new-web-based-tools.html | analog.com |
| GaN Partnership | Cambridge GaN Devices (CGD), a fabless semiconduct... | 12592 | Industry News | GaN Partnership | Cambridge GaN Devices (CGD), a fabless semiconductor company, is working with GlobalFoundries (GF), a semiconductor manufacturer. The partnership follows CGD’s fabless strategy, expanding the supply chain for the company’s ICeGaN® power devices. CGD’s single-chip technology runs with standard Si MOSFET drivers and is built using a standard Si CMOS wafer fab process. This means that there is no need for a specialist process in the wafer fab. ICeGaN IP is design rather than process-based so is fab agnostic meaning it is easily transferrable to new foundries. Furthermore, the CGD design flow has been built on years of experience in GaN technology and enables fab process porting through a proven methodology. Advanced machine learning algorithms are applied to proprietary test chip characterisation data to refine the models. | 13.10.2025 14:00:00 | Oct | news_2025-11-01_9.jpg | \images\news_2025-11-01_9.jpg | https://camgandevices.com/en/p/cgd-partners-with-globalfoundries-to-supply-single-chip-reliable-and-efficient-icegan-power-devices/ | camgandevices.com |
| 1700 V GaN Technology for Next-Generation 800 VDC AI Data Centers | Power Integrations outlined the benefits of its Po... | 12601 | Product Release | 1700 V GaN Technology for Next-Generation 800 V<sub>DC</sub> AI Data Centers | Power Integrations outlined the benefits of its PowiGaN™ gallium-nitride technology for next-generation AI data centers. The capabilities of 1250 V and 1700 V PowiGaN technology for 800 V<sub>DC</sub> power architectures are explained in a white paper. This paper details the performance advantages of Power Integrations’ 1250 V PowiGaN HEMTs, illustrating their field-proven reliability and their ability to meet the power-density and efficiency requirements (>98 %) of the 800 V<sub>DC</sub> architecture. Further, the paper demonstrates that a single 1250 V PowiGaN switch delivers greater power density and efficiency compared to stacked 650 V GaN FETs and competing 1200 V SiC devices. | 13.10.2025 13:30:00 | Oct | news_2025-11-01_18.jpg | \images\news_2025-11-01_18.jpg | https://investors.power.com/news/news-details/2025/Power-Integrations-Details-1250-V-and-1700-V-PowiGaN-Technology-for-Next-Generation-800-VDC-AI-Data-Centers/default.aspx | power.com |
| 800 V Direct Current AI Data Center Power Architecture with GaN Devices | Renesas Electronics supports efficient power conve... | 12600 | Product Release | 800 V Direct Current AI Data Center Power Architecture with GaN Devices | Renesas Electronics supports efficient power conversion and distribution for the 800 V Direct Current power architecture announced by NVIDIA. Renesas’ GaN based power solutions are especially suited for the task, supporting dense DC/DC power conversion with operating voltages of 48 V to as high as 400 V, with the option to stack up to 800 V. Based on the LLC Direct Current Transformer (LLC DCX) topology, these converters achieve up to 98 percent efficiency. For the AC/DC front-end, Renesas uses bi-directional GaN switches to simplify rectifier designs and increase power density. Renesas REXFET MOSFETs, drivers and controllers complement the BOM of the DC/DC converters. | 13.10.2025 12:30:00 | Oct | news_2025-11-01_17.jpg | \images\news_2025-11-01_17.jpg | https://www.renesas.com/en/about/newsroom/renesas-powers-800-volt-direct-current-ai-data-center-architecture-next-generation-power | renesas.com |
| White Paper on Power Solutions for Next-Generation 800 VDC Architecture | ROHM has released a white paper detailing power so... | 12590 | Industry News | White Paper on Power Solutions for Next-Generation 800 V<sub>DC</sub> Architecture | ROHM has released a white paper detailing power solutions for AI data centers based on the 800 V<sub>DC</sub> architecture. The paper outlines power strategies that support large-scale 800 V<sub>DC</sub> power distribution across AI infrastructure. Included in the white paper are ROHM’s power solutions, supported by thermal design simulations, board-level design strategies, and real-world implementation examples. Key highlights of the white paper are rising rack power consumption, the shift to 800 V<sub>DC</sub>, the redefined power conversion, the essential role of SiC and GaN, optimized conversion topologies as well as breakthrough device technologies. | 13.10.2025 12:00:00 | Oct | news_2025-11-01_7.jpg | \images\news_2025-11-01_7.jpg | https://www.rohm.com/news-detail?news-title=2025-10-14_news_white-paper&defaultGroupId=false | rohm.com |
| Power-Management Solutions for scalable AI Infrastructures | Texas Instruments (TI) debuted design resources an... | 12599 | Product Release | Power-Management Solutions for scalable AI Infrastructures | Texas Instruments (TI) debuted design resources and power-management chips to help companies meet growing artificial intelligence (AI) computing demands and scale power-management architectures from 12 V to 48 V to 800 V<sub>DC</sub>. A typical example is a reference design for a 30 kW AI server power-supply unit featuring a three-phase, three-level flying capacitor power factor correction converter paired with dual delta-delta three-phase inductor-inductor-capacitor converters. Another example is a Gallium-nitride intermediate bus converter capable of delivering up to 1. 6kW of output power in a quarter-brick (58.4 mm by 36.8 mm) form factor based on TI’s LMM104RM0 converter module offering over 97.5 % input-to-output power-conversion efficiency and the possibility for active current sharing between multiple modules. | 13.10.2025 11:30:00 | Oct | news_2025-11-01_16.jpg | \images\news_2025-11-01_16.jpg | https://www.ti.com/about-ti/newsroom/news-releases/2025/tis-new-power-management-solutions-enable-scalable-ai-infrastructures.html | ti.com |
| 800 VDC Power Architecture for AI Data Centers | To address the challenge that future AI factory da... | 12594 | Product Release | 800 V<sub>DC</sub> Power Architecture for AI Data Centers | To address the challenge that future AI factory data centers will require megawatt-scale rack power delivery systems, EPC has developed a low-profile GaN-based, 6 kW 800 V-to-12.5 V converter based on an Input Series Output Parallel (ISOP) topology. This solution provides a higher power density than previous solutions as it occupies under 5,000 mm² and 8 mm in height, making it well-suited for space-constrained AI boards.It efficiently converts 800 V<sub>DC</sub> to 12.5 V<sub>DC</sub> close to the load, reducing bussing losses and improving system-level efficiency. By moving from AC directly to 800 V<sub>DC</sub> at the rack level, and then stepping down to 12.5 V at the board, EPC’s GaN-based solution eliminates unnecessary conversion stages and enables the scalability, simplicity, and energy optimization demanded by tomorrow’s AI data centers. | 13.10.2025 06:30:00 | Oct | news_2025-11-01_11.jpg | \images\news_2025-11-01_11.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3241/epc-800-vdc-power-architecture-for-ai-data-centers | epc-co.com |
| Devices for 800 VDC Power Architecture | Alpha and Omega Semiconductor (AOS) announced supp... | 12611 | Product Release | Devices for 800 V<sub>DC</sub> Power Architecture | Alpha and Omega Semiconductor (AOS) announced support for the power requirements of the 800 V<sub>DC</sub> architecture announced by NVIDIA. The shift from traditional 54 V power distribution to an 800 V<sub>DC</sub> system is a fundamental change in data center design, aimed at overcoming the physical limits of existing infrastructure. This paradigm shift requires advanced power semiconductors, particularly Silicon Carbide (SiC) and Gallium Nitride (GaN), to handle the higher voltages and frequencies with maximum efficiency. In terms of High-Voltage Conversion AOS’ SiC devices, including the Gen3 AOM020V120X3 or topside cooled AOGT020V120X2Q, fit either the power sidecar configuration or the single-step conversion of 13.8 kV AC grid power directly to 800 V<sub>DC</sub> at the data center perimeter. This simplifies the power chain and enhances overall system efficiency. In High-Density DC/DC Conversion within the racks, AOS’ 650V GaN FETs, like the upcoming AOGT035V65GA1, and the 100 V GaN FETs like AOFG018V10GA1 provide the required density essential for converting the 800 V<sub>DC</sub> power to the lower voltages needed by GPUs. Their high-frequency switching capabilities allow for smaller, lighter converters, freeing up valuable space. Furthermore, AOS offers multi-rail 16-phase controllers for the 54 V to 12 V and further downstream conversion stages to the AI SoC. | 13.10.2025 06:30:00 | Oct | news_2025-11-15_8.jpg | \images\news_2025-11-15_8.jpg | https://www.aosmd.com/news/alpha-and-omega-semiconductor-supports-800-vdc-power-architecture-next-generation-ai-factories | aosmd.com |
| Schottky Barrier Diode combining low VF and IR | ROHM has developed a Schottky barrier diode that o... | 12602 | Product Release | Schottky Barrier Diode combining low V<sub>F</sub> and I<sub>R</sub> | ROHM has developed a Schottky barrier diode that overcomes the traditional V<sub>F</sub> / I<sub>R</sub> trade-off. This way, it delivers high reliability protection. The RBE01VYM6AFH represents the concept of leveraging the low-V<sub>F</sub> characteristics of rectification SBDs for protection purposes. By adopting a proprietary architecture, ROHM has achieved low I<sub>R</sub> that is typically difficult to realize with low V<sub>F</sub> designs. As a result, even under harsh environmental conditions, the device meets market requirements by delivering V<sub>F</sub> of less than 300 mV (at I<sub>F</sub>=7.5 mA even at Ta = -40 °C), and an I<sub>R</sub> of less than 20 mA (at V<sub>R</sub> = 3 V even at Ta = 125 °C). These exceptional characteristics not only prevent circuit damage caused by high photovoltaic voltage generated when powered OFF, but also significantly reduce the risk of thermal runaway and malfunction during operation. The AEC-Q101 qualified diode is housed in a compact flat-lead SOD-323HE package (2.5 mm × 1.4 mm) that offers both space efficiency and excellent mountability. | 12.10.2025 14:30:00 | Oct | news_2025-11-01_19.jpg | \images\news_2025-11-01_19.jpg | https://www.rohm.com/news-detail?news-title=2025-10-23_news_sbd&defaultGroupId=false | rohm.com |
| Supporting Wide Bandgap R&D | The Microtest Group, a manufacturer of test system... | 12596 | Product Release | Supporting Wide Bandgap R&D | The Microtest Group, a manufacturer of test systems and testing of chips on packages and silicon wafers, launched two turnkey platforms for power device characterization: Quasar<sup>200</sup> and Pulsar<sup>600</sup>. Developed by ipTEST, Microtest’s UK subsidiary, the two platforms are claimed to "set a new benchmark in precision testing". Quasar<sup>200</sup> and Pulsar<sup>600</sup> are designed for academic researchers and engineers developing new semiconductor products. With a plug-and-play approach, they simplify experimental workflows by eliminating the need for custom equipment and reducing manual operations such as soldering and complex test setups. This enables users to obtain accurate, publication-ready results with traceable precision. They speed up datasheet generation, facilitate correlation with production testers, and ensure safe validation of next-generation devices. Quasar<sup>200</sup> is suitable for evaluating Si, GaN, and SiC devices. Its counterpart, Pulsar<sup>600</sup>, extends these capabilities to ultra-high current applications, well-suited for testing SiC inverters and automotive systems, supporting short-circuit tests up to 1,000 A<sub>DC</sub> and more than 10,000 A<sub>AC</sub>. Both platforms offer up to ±0.1% measurement accuracy across all voltage and current waveforms, with typical parasitic inductance below 30 nH in AC tests. UKAS (United Kingdom Accreditation Service)-traceable calibration and comprehensive audit logs ensure reliability, consistency, and compliance from lab benches to production lines. | 11.10.2025 08:30:00 | Oct | news_2025-11-01_13.jpg | \images\news_2025-11-01_13.jpg | https://www.microtest.net/the-microtest-group-simplifies-wbg-semiconductor-testing-for-labs-and-engineers-introducing-the-plug-and-play-quasar200-and-pulsar600/ | microtest.net |
| DC Power Analyzer | The IT2705 DC Power Analyzer is a highly integrate... | 12583 | Product Release | DC Power Analyzer | The IT2705 DC Power Analyzer is a highly integrated modular DC power analyzer designed for dynamic power consumption measurement, battery simulation, and power characterization. It combines DC power, electronic loads and arbitrary waveform generator with an intuitive GUI, supports Oscilloscope Sampling and Data Logging function, allowing for the creation of complex testing without the need for secondary development. Four current ranges with seamless auto-ranging enable accurate analysis of transient current changes from low-power sleep mode to active operation. Oscilloscope sampling rate up to 200 kHz ensures precise capture of microsecond-level parameter variations. It can be applied for testing IoT devices, chips, automotive electronics, smart wearable devices,etc, helping engineers deeply analyze dynamic waveforms, instant responses, and key electrical characteristics, improving testing efficiency and accuracy. | 10.10.2025 16:30:00 | Oct | news_2025-10-15_20.png | \images\news_2025-10-15_20.png | https://www.itechate.com/en/news/IT2705.html | itechate.com |
| PwrSoC 2025 – Global Experts Discussed Miniaturization of Power Conversion | The 9th International Workshop on Power Supply on ... | 12572 | Event News | PwrSoC 2025 – Global Experts Discussed Miniaturization of Power Conversion | The 9th International Workshop on Power Supply on Chip (PwrSoC) has just concluded. Held from September 24 to 26, 2025, in Seoul, South Korea, this year’s workshop marked another significant milestone in the field of integrated power solutions. Over 213 leading researchers and industry professionals from around the world gathered to share insights and advances in the miniaturization and integration of power conversion and power management at the chip, package, and module level. The workshop featured three outstanding plenary talks from industry leaders, offering deep insights into the latest developments in miniaturized and integrated power conversion and power management technologies. Following PwrSoC’s signature single-track format, the workshop presented high-impact invited presentations and an engaging poster session. The technical program covered a wide range of topics, including Systems & Applications, Integrated Magnetics, Topologies & Control, Wide Bandgap Integration, System-Integrated Packaging & Manufacturing, Integrated Capacitors and Energy Storage, and Granular Power Supply. | 10.10.2025 13:00:00 | Oct | news_2025-10-15_8.jpg | \images\news_2025-10-15_8.jpg | https://pwrsocevents.com/ | pwrsocevents.com |
| GaN Half-Bridge Gate Drivers | STMicroelectronics’ STDRIVEG210 and STDRIVEG211 ha... | 12603 | Product Release | GaN Half-Bridge Gate Drivers | STMicroelectronics’ STDRIVEG210 and STDRIVEG211 half-bridge gallium nitride gate drivers are tailored for systems powered from industrial or telecom bus voltages, 72 V battery systems, and 110 V AC line-powered equipment. Rated for maximum rail voltage of 220 V, the drivers integrate linear regulators to generate high-side and low-side 6 V gate signals and provide separate sink and source paths for optimum control. The STDRIVEG210 is featured for power-conversion applications such as server and telecom supplies, battery chargers, adapters, solar micro-inverters and optimizers, LED lighting, and USB-C power sources. Suitable both for resonant and hard-switching topologies, its 300 ns startup time permits to minimize the wake-up time especially during intermittent operation (burst mode). The STDRIVEG211, equipped with overcurrent detection and smart shutdown, targets motor drives in power tools, e-bikes, pumps, and servos, as well as class-D audio amplifiers, in addition to power supplies. Both devices have an integrated bootstrap diode to supply high-side drivers. The separate gate-driving paths can sink 2.4 A and source 1.0 A for fast switching transitions and dV/dt tuning. Protection features include interlocking to prevent cross conduction, while the high-side and low-side drivers have a short propagation delay with 10 ns matching time for low dead time operation. Under-voltage lockout (UVLO) prevents operating in low-efficiency or dangerous conditions and the STDRIVEG211, which is oriented towards motor-drive applications, has additional high-side UVLO protection. | 09.10.2025 15:30:00 | Oct | news_2025-11-01_20.jpg | \images\news_2025-11-01_20.jpg | https://community.st.com/t5/developer-news/half-bridge-gate-drivers-ease-design-with-gan-in-low-voltage/ba-p/846156 | st.com |
| Christian Felgemacher appointed Director Application Engineering | ROHM Semiconductor is pleased to announce the appo... | 12565 | People | Christian Felgemacher appointed Director Application Engineering | ROHM Semiconductor is pleased to announce the appointment of Dr. Christian Felgemacher as Director Application Engineering. Since October 1st, he has been responsible for both the operational coordination of technical customer support and the strategic direction of ROHM’s application engineering activities in Europe. Since joining ROHM in 2017, Dr. Felgemacher has contributed significantly to the establishment of the Application and Technical Solution Center (ATSC) - with the set-up of the company’s Power Lab and the development of customer-oriented solutions for ROHM’s European customers. In his previous role as Senior Department Manager Application Engineering, he already led the Technical Consulting and Customer Support division with great commitment and promoted conceptual cooperation with important partners from industry and university research. His leadership role was crucial to the expansion of ROHM’s activities in the automotive, industrial, and energy sectors - particularly through initiatives related to SiC technologies and inverter development. | 09.10.2025 06:00:00 | Oct | news_2025-10-15_1.jpg | \images\news_2025-10-15_1.jpg | https://www.rohm.com/news-detail?news-title=2025-10-09_news&defaultGroupId=false | rohm.com |
| 300 mm GaN Program launched | Imec welcomes AIXTRON, GlobalFoundries, KLA Corpor... | 12567 | Industry News | 300 mm GaN Program launched | Imec welcomes AIXTRON, GlobalFoundries, KLA Corporation, Synopsys, and Veeco as first partners in its 300 mm gallium-nitride open innovation program track for low- and high-voltage power electronics applications. This program track, part of Imec’s industrial affiliation program (IIAP) on GaN power electronics, has been set up to develop 300 mm GaN epi growth, and low and high voltage GaN high electron mobility transistor (HEMT) process flows. The use of 300 mm substrates will not only reduce GaN device manufacturing costs, but it will also allow the development of more advanced power electronics devices, such as efficient low-voltage point-of-load converters for CPUs and GPUs. As part of the 300 mm GaN program, a baseline lateral p-GaN HEMT technology platform will first be established for low-voltage applications (100 V and beyond), using 300 mm Si(111) as a substrate. For this, process module work centered around p-GaN etch and Ohmic contact formation is ongoing. Later, high-voltage applications are targeted. For 650 V and above, developments will utilize 300 mm semi-spec and CMOS-compatible QST-® engineered substrates (a material with poly-crystalline AlN core). During the developments, control over the bow of the 300 mm wafers, and their mechanical strength are prime concerns. Imec expects to have full 300mm capabilities installed in its 300mm cleanroom by the end of 2025. | 06.10.2025 08:00:00 | Oct | news_2025-10-15_3.jpg | \images\news_2025-10-15_3.jpg | https://www.imec-int.com/en/press/imec-launches-300mm-gan-program-to-develop-power-devices | imec-int.com |
| 40 W DC/DC Converters for demanding space-constrained Applications | XP Power launched the BCT40T series of 40 W DC/DC ... | 12582 | Product Release | 40 W DC/DC Converters for demanding space-constrained Applications | XP Power launched the BCT40T series of 40 W DC/DC converters, housed in a 1" × 1" (25.4 mm × 25.4 mm) package designed for PCB mounting. This series is suited for industrial technology, ITE, and communications applications where space is a critical constraint; it is specifically engineered for sectors such as test & measurement, robotics, process control, analytical instruments, and communications equipment. It features a 4:1 input voltage range and operates with an efficiency of up to 89 %. Models are available with nominal 24 V<sub>DC</sub> inputs (ranging from 9.0 V to 36.0 V<sub>DC</sub>) and 48 V<sub>DC</sub> inputs (ranging from 18.0 V to 75.0 V<sub>DC</sub>). The BCT40T offers single regulated outputs ranging from 3.3 V to 24 V<sub>DC</sub>, as well as dual regulated outputs at ±12 V<sub>DC</sub> and ±15 V<sub>DC</sub>. Furthermore, the single-output models offer the flexibility of ±10% output voltage adjustment via an external trim resistor, enabling specific voltage requirements. Protection features include 2kV<sub>DC</sub> isolation between input and output, continuous short-circuit protection with auto-recovery, and overload protection typically set between 130 % and 180 %. It also incorporates overtemperature protection (at 115 °C case temperature), under-voltage lockout (UVLO), and overvoltage protection via a Zener diode clamp. The series holds worldwide safety approvals, meeting IEC/UL/EN62368-1 standards, as well as applicable CE and UKCA directives. It also complies with EN55032 Class A/B for conducted and radiated emissions, and EN61000-4-x for immunity. With a 3-year warranty, the BCT40T series stands as a reliable and high-performance solution for power delivery. | 03.10.2025 15:30:00 | Oct | news_2025-10-15_19.jpg | \images\news_2025-10-15_19.jpg | https://www.xppower.com/resources/press-releases/40W-compact-DC-DC-converters | xppower.com |
| Power Company opened its Italian Headquarters | RECOM Power Solutions (RPS), part of the RECOM Gro... | 12587 | Industry News | Power Company opened its Italian Headquarters | RECOM Power Solutions (RPS), part of the RECOM Group, officially celebrated the opening of its company headquarters in Mareno di Piave, Italy. The event brought together employees from around the world, customers, and representatives from politics and business to mark this milestone. The celebration embodied the company’s core values – teamwork, passion, and a shared vision. In an atmosphere filled with energy and inspiring conversations, the event marked not only the inauguration of the new site but also the beginning of another chapter in the company’s history. | 02.10.2025 09:00:00 | Oct | news_2025-11-01_4.jpg | \images\news_2025-11-01_4.jpg | https://recom-power.com/en/rec-n-recom-power-solutions-opens-new-headquarters-in-italy-441.html?3 | recom-power.com |
| Innovation Day showcases technical Innovations | The dataTec Innovation Day, held on September 25 i... | 12571 | Industry News | Innovation Day showcases technical Innovations | The dataTec Innovation Day, held on September 25 in Stuttgart by the specialist distributor, brought together 216 participants who experienced the latest innovations in test and measurement technology. The event’s name spoke for itself: the selected partner companies presented cutting-edge solutions that set new standards. The dataTec Innovation Day agenda featured live demonstrations, expert talks, and workshops on four key areas: EMPT (Electronic Measurement and Testing Technology), Power (AC/DC power supplies & data loggers), High-End Measurement Technology, and Modular Measurement Technology. Ample networking opportunities rounded off the event. Markus Kohler, Chief Sales Officer of dataTec, emphasized the responsibility of distribution partners in the field of measurement and testing technology. "We are observing three major developments: the increasing automation of measurement and testing tasks, the growing use of artificial intelligence in evaluation, and a clear trend toward more efficient and sustainable solutions. As a specialized distributor with 40 years of experience, our mission is to provide engineers and technicians with the right tools, and to offer practical support through consulting, application expertise, and dedicated service." | 01.10.2025 12:00:00 | Oct | news_2025-10-15_7.jpg | \images\news_2025-10-15_7.jpg | https://www.datatec.eu/de/en/wiki/first-datatec-innovation-day-showcases-technical-innovations | datatec.eu |
| Industrial Power Supply Series now also with 600 W and 1000 W Models | TDK-Lambda has expanded its GUS series of single-o... | 12579 | Product Release | Industrial Power Supply Series now also with 600 W and 1000 W Models | TDK-Lambda has expanded its GUS series of single-output general-purpose power supplies with 600 W and 1000 W models. Designed for applications such as light industrial equipment, factory automation, semiconductor fabrication, ATE test systems, LED lighting, and broadcast, the new models provide output voltages of 12, 24, 36, and 48 V, achieving efficiencies of up to 95 % with a load of 30 to 100 %. Both units feature an internal cooling fan with an acoustic noise, which is typically less than 45 dBA. The GUS600 model measures 101.6 × 41 × 152.4 mm3 (W x H x D), while the GUS1000 has a compact package size of 101.6 × 41 × 177.8 mm3. The models feature an operating temperature range of -20 to +70 °C and the output voltage can be adjusted for non-standard system voltages while output remote on/off is available as an option. Safety certifications include IEC/EN/UL/CSA62368-1 (compliant to IEC61010-1) and carry the CE and UKCA marking for the Low Voltage, EMC and RoHS Directives. The units also comply with EN 55011-B and EN 55032-B conducted and radiated emissions standards and meet EN 61000-3-2 harmonics and IEC 61000-4 immunity standards. The GUS series also meets IEC 62477-1 (OVC III) and has an input-to-output isolation of 2,000 V<sub>AC</sub>, input-to-ground of 3,000 V<sub>AC</sub>, and an output-to-ground of 500 V<sub>AC</sub>. The nominal input voltage is 100 – 240 V. | 30.09.2025 12:30:00 | Sep | news_2025-10-15_16.jpg | \images\news_2025-10-15_16.jpg | https://www.emea.lambda.tdk.com/uk/news/article/21117 | lambda.tdk.com |
| Wide Input DC/DC Range delivers 10 W in DIP-24 Package | The REC10K-RW series of encapsulated DC/DCs conver... | 12578 | Product Release | Wide Input DC/DC Range delivers 10 W in DIP-24 Package | The REC10K-RW series of encapsulated DC/DCs converters recently launched by Recom features a 4:1 input range (9-36 V and 18-75 VDC) and a selection of regulated single and dual outputs covering all common requirements. A full 10 W is available up to at least 60 °C ambient, deriving to 100 °C. Output trim and ON/OFF control features are included. Isolation is 4 kVDC for 1 minute (functional), and the parts are safety-certified to IEC/EN/UL/CSA62368-1. Full protection against input under-voltage, over-temperature, and output short-circuits, over-current, and over-voltage are included. | 30.09.2025 11:30:00 | Sep | news_2025-10-15_15.jpg | \images\news_2025-10-15_15.jpg | https://recom-power.com/en/rec-n-wide-input-dc!sdc-range-delivers-10w-in-dip24-package-438.html?5 | recom-power.com |
| Application-specific MOSFETs provide enhanced dynamic Current Sharing | Nexperia has added some devices to its family of a... | 12576 | Product Release | Application-specific MOSFETs provide enhanced dynamic Current Sharing | Nexperia has added some devices to its family of application-specific MOSFETs (ASFETs), whose features have been tuned to meet the exacting requirements of specific end applications. The 80 V PSMN1R9-80SSJ and 100 V PSMN2R3-100SSJ switches have been designed to provide enhanced dynamic current sharing in high-power 48 V applications that require the use of several closely matched MOSFETs connected in parallel. These include motor drive in electric vehicles like forklifts, e-scooters and mobility devices, as well as high-power industrial motors. When connecting two or more MOSFETs in parallel to support high current capability and reduce conduction losses, it can be challenging for designers to ensure the load current is shared equally between individual devices during turn-on and turn-off. MOSFETs with the lowest V<sub>GS(th)</sub> will turn on first, causing higher thermal stress resulting in accelerated failure. In order to provide a sufficient safety margin, engineers often over-specify the MOSFETs used in their end applications. PSMN1R9-80SSJ and PSMN2R3-100SSJ ASFETs offer a 50 % lower current delta between parallel devices (for currents up to 50 A per device) at turn-on/off and also offer a V<sub>GS(th)</sub> window that is up to 50 % lower (0.6 V min-to-max). Combined with the R<sub>DS(on)</sub> of 1.9 mΩ or 2.3 mΩ this helps to provide high efficiency in power switching applications. These ASFET devices are available in the rugged, space-efficient 8 mm × 8 mm copper-clip LFPAK88 package, delivering operating temperature ranging from -55 °C to +175 °C. | 30.09.2025 09:30:00 | Sep | news_2025-10-15_13.jpg | \images\news_2025-10-15_13.jpg | https://www.nexperia.com/about/news-events/press-releases/nexperia-application-specific-mosfets-provide-enhanced-dynamic-current-sharing-for-high-power-industrial-applications | nexperia.com |
| Passive Components: Plant Opening in China | Isabellenhütte Heusler has opened its first plant ... | 12568 | Industry News | Passive Components: Plant Opening in China | Isabellenhütte Heusler has opened its first plant in China – in Jintan (Changzhou). The company hosted a grand opening ceremony attended by key stakeholders, including customers, suppliers, service providers, local authorities, and political representatives. Dr. Gero Heusler, member of the advisory board, and the management team – represented by Thilo Gleisberg (CTO) and Dr. Felix Heusler (CFO) – also attended the event and emphasized the strategic importance of the new location for the company’s international orientation. With an investment of approximately 18 million Euros and more than 7,000 m² of production space on three levels, the family-owned company is consistently expanding its presence in the world’s most important industrial and electronics market. The facility targets LEED Silver certification and will operate entirely on renewable electricity. Isabellenhütte has been known for precision and quality since 1482 - today for its precision and power resistors, current measurement systems, and high-quality alloys. From the outset, the plant has focused on efficient, resource-saving processes and building local expertise. Once in regular operation, over 100 skilled jobs will be created; the first 25 employees have already started work. There are also plans to collaborate with universities and research institutions in the region. | 29.09.2025 09:00:00 | Sep | news_2025-10-15_4.jpg | \images\news_2025-10-15_4.jpg | https://www.isabellenhuette.com/news/factory-opening-china | isabellenhuette.com |
| Tailored for Industrial Switching Applications | Infineon Technologies launched the OptiMOS™ ... | 12574 | Product Release | Tailored for Industrial Switching Applications | Infineon Technologies launched the OptiMOS™ 7 power MOSFET family for industrial and consumer markets, extending the already existing OptiMOS 7 automotive portfolio. Now there are products specifically for high performance switching, motor-drives, or R<sub>DS(ON)</sub>-focused applications. The OptiMOS 7 25 V MOSFETs go beyond the one-size-fits-all approach, offering devices tailored to switching applications. The product variant targets applications such as intermediate bus converters (IBCs) with various topologies used in 48 V conversion for power AI cores, as well as switched-mode power supplies in telecommunications and traditional server applications. There are two technology variants: devices optimized for hard-switching and soft-switching topologies. Compared to the OptiMOS 5 25 V, the new generation achieves up to 20 percent lower R<sub>DS(ON)</sub> and up to 25 percent better FOMs, depending on the optimization type. The OptiMOS 7 25 V devices, optimized for switching, are available in source-down PQFN 3.3×3.3 packages with bottom and dual-side cooling variants in a center-gate footprint while the OptiMOS 7 40 V motor-drives optimized family includes SuperSO8 (5x6) and PQFN 3.3×3.3 packages. | 26.09.2025 07:30:00 | Sep | news_2025-10-15_11.png | \images\news_2025-10-15_11.png | https://www.infineon.com/market-news/2025/INFPSS202509-150 | infineon.com |
| Collaboration on SiC Power Electronics Packages to enhance Flexibility | Infineon Technologies and ROHM have signed a Memor... | 12552 | Industry News | Collaboration on SiC Power Electronics Packages to enhance Flexibility | Infineon Technologies and ROHM have signed a Memorandum of Understanding to collaborate on packages for silicon carbide power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both Infineon and ROHM. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs. As part of the agreement, ROHM will adopt Infineon’s top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon’s top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM’s DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247. Infineon and ROHM plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and GaN. | 25.09.2025 13:00:00 | Sep | news_2025-10-01_8.jpg | \images\news_2025-10-01_8.jpg | https://www.infineon.com/press-release/2025/INFXX202509-149 | infineon.com |
| 100 V N-channel power MOSFET | Toshiba Electronics has launched the TPH2R70AR5, a... | 12577 | Product Release | 100 V N-channel power MOSFET | Toshiba Electronics has launched the TPH2R70AR5, a 100 V-rated N-channel power MOSFET fabricated in the company’s U-MOS11-H process. The MOSFET will be primarily used in switched-mode power supply (SMPS) applications, particularly high-efficiency DC/DC converters. Key application sectors will be within data centres, communications base stations, and other high-end industrial equipment. The TPH2R70AR5 offers significant performance advantages over devices manufactured with the existing U-MOSX-H process. For example, compared to the earlier TPH3R10AQM, the drain-source on-resistance (R<sub>DS(ON)</sub>) has reduced by around 8 % to 2.7 mΩ (max.) while the total gate charge (Q<sub>g</sub>) is now 37 % lower at 52 nC (typ.). The R<sub>DS(ON)</sub> × Q<sub>g</sub> figure-of-merit (FoM) is therefore improved by 42 %. Housed in the SOP (N) package measuring 5.15 mm × 6.1 mm, the TPH2R70AR5 is rated for a maximum drain current (I<sub>D</sub>) of 190 A at an ambient temperature of 25 °C. The device is capable of operating with a channel temperature (T<sub>ch</sub>) up to 175 °C, thereby reducing the need for cooling measures. Toshiba also offers circuit design support tools: the G0 SPICE model, which verifies circuit function in a short time, and highly accurate G2 SPICE models that accurately reproduce transient characteristics. | 25.09.2025 10:30:00 | Sep | news_2025-10-15_14.jpg | \images\news_2025-10-15_14.jpg | https://toshiba.semicon-storage.com/ap-en/company/news/news-topics/2025/09/mosfet-20250925-1.html | toshiba.semicon-storage.com |
| ASPICE Capability Level 2 for Next Generation Cell Monitoring System achieved | Dukosi has achieved Automotive SPICE® (ASPICE)... | 12553 | Industry News | ASPICE Capability Level 2 for Next Generation Cell Monitoring System achieved | Dukosi has achieved Automotive SPICE® (ASPICE) Capability Level 2 for development processes related to its next generation cell monitoring system for automotive and electric vehicle (xEV) applications. This important assessment milestone assures compliance with the demanding quality requirements of automotive customers and gives confidence that automotive software and systems are developed with consistent quality, reliability and safety. The intensive assessment was performed by UL Solutions in compliance with ASPICE PAM 4.0 (Process Assessment Model) and in accordance with the ISO/IEC 33002 standard and completed in September 2025. The Automotive Software Process Improvement and Capability Determination (ASPICE) standard, developed by the German Association of the Automotive Industry (VDA), has been established worldwide and is used by leading OEMs and suppliers to evaluate the development processes of software-based systems in and around the vehicle. UL Solutions’ rigorous assessment included Dukosi’s processes across system development, software development, support and project management, and the scope of this assessment went beyond the scope recommended by VDA. Reinforcing the company’s commitment to product safety, Dukosi’s development processes are in full alignment with ASPICE PAM 4.0 and ISO 26262. | 23.09.2025 14:00:00 | Sep | news_2025-10-01_9.png | \images\news_2025-10-01_9.png | https://www.dukosi.com/press-release/dukosi-achieves-aspice-capability-level-2-for-its-next-generation-cell-monitoring-system | dukosi.com |
| Entering the Semiconductor Industry | Kurtz Ersa has taken over the business operations ... | 12589 | Industry News | Entering the Semiconductor Industry | Kurtz Ersa has taken over the business operations of the insolvent equipment manufacturer ATV Technologie. For Kurtz Ersa, this is the strategic step into the market for production systems for the semiconductor industry that has been announced for some time. All ATV employees will be taken over. ATV will continue to do business under the name Kurtz Ersa Semicon. The company is specialized in the development and distribution of high-quality vacuum soldering systems providing precise temperature control and high homogeneity – essential for the requirements of the semiconductor and microelectronics industry. The interdisciplinary team, consisting of engineers, physicists, and specialists in precision mechanics and electrical engineering, delivers customized solutions for universities, research institutes, laboratories, and manufacturing companies. | 23.09.2025 11:00:00 | Sep | news_2025-11-01_6.jpg | \images\news_2025-11-01_6.jpg | https://kurtzersa.com/news/all/kurtz-ersa-enters-the-semiconductor-industry | kurtzersa.com |
| Dispensable Thermal Gel offers Vertical Tackiness | The Chomerics Division of Parker Hannifin introduc... | 12581 | Product Release | Dispensable Thermal Gel offers Vertical Tackiness | The Chomerics Division of Parker Hannifin introduced its THERM-GAP™ GEL 75VT, a dispensable thermal gel offering 7.5 W/m-K typical thermal conductivity. The fully cured product performs reliably in vertical and high-vibration applications, including those that are mission-critical. To ensure its suitability for conducting heat away from electronics to heatsinks or enclosures in demanding operating conditions, Parker Chomerics subjected GEL 75VT to several long-term reliability tests. The product passed automotive vertical slump testing, high-vibration testing and telecommunications thermal material verification processes. With its long-term reliability, THERM-GAP GEL 75VT can meet the requirements of design engineers who need their new electronic device to deliver consistent thermal performance over many years of continuous service. Automotive sensors and devices, telecommunications modules, BESS (battery and energy storage system) modules, industrial electronics, network and IT infrastructure, power electronics, and consumer electronics are all among potential beneficiaries. Only a very low compressive force is necessary to ensure deformation under assembly pressure. Fully RoHS-compliant, important electrical properties of THERM-A-GAP GEL 75VT include: 7.9 kV<sub>AC</sub>/mm dielectric strength (ASTM D149 test method); 1014 Ωcm volume resistivity (ASTM D257); 5.2 dielectric constant at 1,000 kHz/0.76 mm thick (ASTM D150); and 0.003 dissipation factor at 1,000 kHz/0.76 mm thick (Chomerics test method). | 22.09.2025 14:30:00 | Sep | news_2025-10-15_18.jpg | \images\news_2025-10-15_18.jpg | https://ph.parker.com/us/en/product-list/therm-a-gap-gel-75vt-thermally-conductive-gel | parker.com |
| Groundbreaking for EMC Lab | TDK is building a new EMC laboratory in Regensburg... | 12550 | Industry News | Groundbreaking for EMC Lab | TDK is building a new EMC laboratory in Regensburg. It will replace the accredited laboratory that has been in existence for more than 60 years at a new location. The facility will offer internal and external customers state-of-the-art capabilities for measuring electromagnetic compatibility (EMC). The groundbreaking ceremony for the new laboratory has now taken place. TDK is investing a double-digit million euro amount in the new building. The new laboratory will have a total area of almost 1,700 square meters, 1,100 square meters of which will be used for the laboratory and measuring stations. A showroom and a large customer area with meeting rooms are also planned. The centerpiece of the laboratory is a new 10-meter semi-anechoic chamber, in which even large vehicles and powerful industrial applications can be measured. It is complemented by a 3-meter full-absorber chamber for RF and radio applications, which is claimed to enable "the fastest measurement methods at the highest frequencies", as well as a compact chamber for measuring automotive components such as control units or onboard chargers. This chamber is equipped with absorbers that are only ten centimeters deep. | 22.09.2025 11:00:00 | Sep | news_2025-10-01_6.jpg | \images\news_2025-10-01_6.jpg | https://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/groundbreaking-new-emc-lab-regensburg/3629514 | tdk-electronics.tdk.com |
| Lift motor developed using Ferrite Magnets – without Rare Earth Materials | Ziehl-Abegg claims to be "the first company worldw... | 12546 | Industry News | Lift motor developed using Ferrite Magnets – without Rare Earth Materials | Ziehl-Abegg claims to be "the first company worldwide to develop a high-performance synchronous lift motor that operates entirely without rare earth magnets – without compromising on power output". The new lift motor, which uses ferrite magnets, eliminates the need for critical raw materials such as neodymium and dysprosium, which have traditionally been considered indispensable for high-performance drives due to their power density. These rare earth elements are sourced almost exclusively from one single country. Despite foregoing rare earth high-performance magnets, this motor delivers identical performance – all within the same dimensions. This is a real advancement, particularly for high-torque lift applications where smooth operation and energy efficiency are critical. A patent application has already been filed. | 19.09.2025 07:00:00 | Sep | news_2025-10-01_2.jpg | \images\news_2025-10-01_2.jpg | https://www.ziehl-abegg.com/en/company/press/press-releases/news-content-detail/lift-motor-developed-using-ferrite-magnets | ziehl-abegg.com |
| Current/OS Foundation joined | Danisense has joined the Current/OS Foundation, a ... | 12554 | Industry News | Current/OS Foundation joined | Danisense has joined the Current/OS Foundation, a nonprofit, open partnership dedicated to ensuring reliable and sustainable hybrid AC/DC power distribution in buildings and installations. The aim of the foundation is to promote direct current electrical safety and to enhance energy resilience to ensure reliable access to electricity for all. The reason for joining is that Danisense "firmly believes that a swift and intelligent energy transition is possible through the wider adoption of DC microgrids, which are already proving superior to AC networks in several applications." According to Danisense "joining the Current/OS Foundation was a natural step for us to help shape the future of DC infrastructure." | 18.09.2025 15:00:00 | Sep | news_2025-10-01_10.jpg | \images\news_2025-10-01_10.jpg | https://danisense.com/ | danisense.com |
| 100 V MOSFETs deliver low Conduction Losses | Nexperia launched its AEC-Q101 qualified 100 V MOS... | 12560 | Product Release | 100 V MOSFETs deliver low Conduction Losses | Nexperia launched its AEC-Q101 qualified 100 V MOSFETs in compact CCPAK1212 (12 mm x 12 mm) copper-clip packaging. According to the company "these devices deliver ultra-low conduction losses with on-resistance as low as 0.99 mΩ, and enable safe current above 460 A". This makes them suited for thermally demanding 48 V automotive applications, including on-board chargers (OBC), traction inverters, and battery management systems (BMS). In addition to passenger vehicles, these MOSFETs also benefit 2- and 3-wheel e-mobility, DC/DC converters, and industrial high-current modules, where efficiency and thermal reliability are equally critical. The next-generation 100 V AEC-Q101 trench silicon platform, combined with the thermal performance (R<sub>th(j-b)</sub> = 0.1 K/W) of Nexperia’s proprietary copper-clip CCPAK1212 package, enables this R<sub>DS(on)</sub>. Together, these features provide the critical advantages required in 48 V automotive systems - high current capability, superior power density, and a robust Safe Operating Area (SOA) rating of up to 400 A at 100 V. The devices are available in a choice of inverted top-side cooled (CCPAK1212i) and bottom-side cooled (CCPAK1212) versions. | 18.09.2025 11:30:00 | Sep | news_2025-10-01_16.jpg | \images\news_2025-10-01_16.jpg | https://www.nexperia.com/about/news-events/press-releases/100-v-mosfets-from-nexperia-deliver-ultra-low-conduction-losses-in-demanding-automotive-applications | nexperia.com |
| Manufacturing Partner for Power Devices | iDEAL Semiconductor confirms that its SuperQ&trade... | 12566 | Industry News | Manufacturing Partner for Power Devices | iDEAL Semiconductor confirms that its SuperQ™ silicon power devices are now in production at Polar Semiconductor, a foundry specializing in high-voltage, power, and sensor technologies. SuperQ uses a patented asymmetrical RESURF structure; it significantly reduces conduction and switching losses – with up to 2.7x lower resistance compared to legacy silicon and cutting switching losses by up to 2.1x versus competing devices. Polar Semiconductor operates a high-volume 200 mm manufacturing facility in Minnesota and is claimed to be "the only majority U.S.-owned foundry with deep expertise in high-voltage and power semiconductors". With a 50-year heritage in automotive production, Polar is IATF 16949 certified and committed to zero-defect manufacturing. iDEAL’s first products – 150 V and 200 V MOSFETs announced in July – are already in production at Polar, with 300 V and 400 V devices to follow. Polar is further expanding to double its manufacturing capacity and invest in next-generation technologies. | 18.09.2025 07:00:00 | Sep | news_2025-10-15_2.png | \images\news_2025-10-15_2.png | https://idealsemi.com/ideal-semiconductor-announces-polar-semiconductor-as-manufacturing-partner-for-superq-power-devices/ | idealsemi.com |
| Semiconductor Company appoints President and CEO | OmniOn Power has appointed David French as its new... | 12547 | People | Semiconductor Company appoints President and CEO | OmniOn Power has appointed David French as its new President and CEO. French has worked for more than 40 years in the semiconductor and electronics industries. Prior to joining OmniOn, he managed NXP’s Mobile and Computing Business Unit. French has also served as the CEO of Cirrus Logic, where he led the company’s transformation towards mixed-signal audio solutions. In addition, he’s held various senior-level positions at Texas Instruments and Analog Devices. French’s appointment follows the resignation of Jeff Schnitzer in August 2025, the company’s prior President and CEO. | 17.09.2025 08:00:00 | Sep | news_2025-10-01_3.png | \images\news_2025-10-01_3.png | https://www.omnionpower.com/about/news/press-releases/omnion-power-press-release-david-french-named-president-and-ceo | omnionpower.com |
| Duo of Protection Switches that support Type-C EPR 3.1 extended Power Levels | Alpha and Omega Semiconductor announced two Type-C... | 12562 | Product Release | Duo of Protection Switches that support Type-C EPR 3.1 extended Power Levels | Alpha and Omega Semiconductor announced two Type-C sink and source protection switches to increase the power delivery capability of USB Type-C ports to 240 W, paving the way for Type-C extended power range (EPR) implementations. The AOZ13058DI offers overvoltage/overcurrent protection features suited for 48 V Type-C sinking applications, while the AOZ15953DI provides the additional protection features needed for Type-C sourcing applications. These switches help designers safeguard 48 V Type-C EPR capabilities to enhance reliability and functionality in high-performance and gaming laptops, personal computers, monitors, docking, and other higher-power connected portable devices. The AOZ13058DI features a 20 milliohm resistance and provides a set of features including programmable soft-start, overvoltage, ideal diode reverse-current, short-circuit, overcurrent, overtemperature, and ESD protection. These features also help isolate and protect downstream components from abnormal VBUS voltage and potentially harmful current conditions. Ideal diode fast reverse current protection allows multiple power paths to be connected in parallel without interference. The switch’s integrated positive and negative transient voltage suppression at VIN enhances immunity to voltage spikes meeting IEC safety standards (IEC61000-4-2: ±8 kV contact, ±15 kV contact; IEC61000-4-5: 20 A (8/20 µs) on VIN and VOUT). The AOZ13058DI also features a programmable current limit function, permitting its application as a sourcing switch in an EPR 3.1 docking system. | 16.09.2025 13:30:00 | Sep | news_2025-10-01_18.jpg | \images\news_2025-10-01_18.jpg | https://www.aosmd.com/news/alpha-and-omega-semiconductor-unveils-powerful-duo-protection-switches-support-type-c-epr-31 | aosmd.com |
| 2-in-1 SiC Molded Module | ROHM has developed the "DOT-247," a 2-in-1 SiC mol... | 12561 | Product Release | 2-in-1 SiC Molded Module | ROHM has developed the "DOT-247," a 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx), suited for industrial applications such as PV inverters, UPS systems, and semiconductor relays. The module retains the versatility of the "TO-247" package while achieving design flexibility and power density. The DOT-247 features a combined structure consisting of two TO-247 packages. This design enables the use of large chips, which were structurally difficult to accommodate in the TO-247 package. Additionally, through optimized package structure, thermal resistance has been reduced by approximately 15 % and inductance by approximately 50 % compared to the TO-247. This enables a power density 2.3 times higher than the TO-247 in a half-bridge configuration – achieving the same power conversion circuit in approximately half the volume. These products featuring the DOT-247 package are available in two topologies: half-bridge and common-source. Currently, two-level inverters are the mainstream in PV inverters, but there is growing demand for multi-level circuits such as three-level NPC, three-level T-NPC, and five-level ANPC to meet the need for higher voltages. In the switching sections of these circuits, topologies such as half-bridge and common-source are mixed – making custom products necessary in many cases when using conventional SiC modules. Therefore, ROHM has developed each of these two topologies into a 2-in-1 module to support various configurations such as NPC circuits and DC/DC converters. Evaluation boards will also be made available. | 16.09.2025 12:30:00 | Sep | news_2025-10-01_17.jpg | \images\news_2025-10-01_17.jpg | https://www.rohm.com/news-detail?news-title=2025-09-16_news_sic-power-module&defaultGroupId=false | rohm.com |
| LLC Half-Bridge Transformers for isolated Gate Driver Bias Supply | The HTX8045C Series transformers from Coilcraft bu... | 12558 | Product Release | LLC Half-Bridge Transformers for isolated Gate Driver Bias Supply | The HTX8045C Series transformers from Coilcraft build on the proven chip-style construction of the HTX family – an improvement over conventional core and bobbin designs. This surface-mount configuration reduces component size and enhances manufacturing efficiency. With higher isolation voltage compared to the HTX7045C and an interwinding capacitance as low as 0.55 pF, the HTX8045C is particularly well-suited for use in isolated gate driver bias supplies employing the open-loop LLC topology to achieve low EMI noise and high CMTI (Common Mode Transient Immunity). These characteristics make it especially beneficial for high-frequency switches including SiC, GaN and IGBT technologies. The HTX8045C is AEC-Q200-qualified, making it suited for automotive traction inverters and motor controls, automotive on-board chargers (OBC), EV charging stations, battery management systems (BMS), automotive DC/DC converters as well as other automotive and industrial applications. | 16.09.2025 09:30:00 | Sep | news_2025-10-01_14.jpg | \images\news_2025-10-01_14.jpg | https://www.coilcraft.com/en-us/products/transformers/power-transformers/power-converter-transformers/htx8045c/ | coilcraft.com |
| IGBT7 Modules for high Power Density and easier System Integration | Microchip announced a family of DualPack 3 (DP3) p... | 12575 | Product Release | IGBT7 Modules for high Power Density and easier System Integration | Microchip announced a family of DualPack 3 (DP3) power modules featuring IGBT7 technology available in six variants at 1200 V and 1700 V with high-current ranging from 300–900 A. These DP3 power modules are designed to address the growing demand for compact, cost-effective and simplified power converter solutions while reducing power losses by up to 15–20 % compared to IGBT4 devices. During overload temperatures may rise up to 175 °C. They are suited for industrial drives, renewables, traction, energy storage and agricultural vehicles. Available in a phase-leg configuration, the DP3 power modules in a footprint of approximately 152 mm × 62 mm × 20 mm, provide a second-source option to industry-standard EconoDUAL™ packages. | 16.09.2025 08:30:00 | Sep | news_2025-10-15_12.jpg | \images\news_2025-10-15_12.jpg | https://www.microchip.com/en-us/about/news-releases/products/new-dualpack-3-igbt7-modules-deliver-high-power-density | microchip.com |
| Fast Recovery Power Rectifier Assemblies | Dean Technology (DTI) extended their their power r... | 12555 | Product Release | Fast Recovery Power Rectifier Assemblies | Dean Technology (DTI) extended their their power rectifier assembly line, the HRFS5 Series. They join the HRS5 series and HRS10 series of standard recovery power assemblies. The HRFS5 series follows the open frame concept found in the legacy HRS5 and HRS10 products, allowing for better thermal conductivity and are intended for ambient air applications but can also be used in submerged oil environments. It offers a reverse recovery time (TRR) of 75 ns maximum, which is good for switching applications. HRFS5 units offer a maximum repetitive reverse voltage range from 14.4 to 28.8 kV and 5.7 A of average forward current. All products in the HRFS5 series line are capacitor compensated and modular based. | 16.09.2025 06:30:00 | Sep | news_2025-10-01_11.png | \images\news_2025-10-01_11.png | https://www.deantechnology.com/new-line-of-fast-recovery-power-rectifier-assemblies/ | deantechnology.com |
| Global Agreement to Distribute High-Energy Density Capacitors | Mouser Electronics announces a global distribution... | 12548 | Industry News | Global Agreement to Distribute High-Energy Density Capacitors | Mouser Electronics announces a global distribution agreement with Quantic Evans, a company which is active in high-energy density capacitors for demanding mission-critical applications. Quantic Evans’ hybrid capacitors, known as EVANSCAPS, serve diverse markets, including aerospace, energy, and communications, where high-reliability, size, weight, and power (SWaP) are crucial. The Quantic Evans HyCap hybrid capacitors, available to order from Mouser, are designed to provide reliable operation in a wide range of harsh environments, including those with shock and vibration conditions. These devices are available in a capacitance range of 68 µF to 2700 µF with a ±20% tolerance, with a voltage range of 10 V<sub>DC</sub> to 150 V<sub>DC</sub>. The HyCap capacitor series’ robust construction makes them suitable for energy, industrial, space, and defence applications. They are built with patented hybrid wet tantalum technology - featuring a Tantalum Pentoxide anode and a Ruthenium Oxide cathode. | 15.09.2025 09:00:00 | Sep | news_2025-10-01_4.jpg | \images\news_2025-10-01_4.jpg | https://eu.mouser.com/newsroom/publicrelations-quantic-evans-new-manufacturer-2025final/ | mouser.com |
| Cleanroom opening at Malaysian Wafer Fab | X-FAB celebrated the grand opening of a manufactur... | 12569 | Industry News | Cleanroom opening at Malaysian Wafer Fab | X-FAB celebrated the grand opening of a manufacturing line at its Sarawak facility. The ceremony was officiated by the Prime Minister of Malaysia, YAB Dato’ Seri Anwar Ibrahim, and the Sarawak Premier, YAB Datuk Patinggi Tan Sri Abang Johari Tun Openg. This major expansion – representing a $600 million investment – added 6,000 square meters of cleanroom space and was completed within two years, from groundbreaking to the first production lots. As a result, the site’s monthly wafer start capacity has increased from 30,000 to 40,000, with a key highlight being the more than doubling of capacity for X-FAB’s 180 nm BCD-on-SOI technology (XT018). BCD-on-SOI technology is superior in many aspects when compared to conventional bulk BCD technologies. Key advantages include virtual latch-up free circuits, strong EMC performance (due to complete isolation with buried oxide/DTI) and simplified handling of below ground transients. The XT018 platform features a portfolio of voltage options from 10 V to 375 V as well as a full range of automotive Grade-0 qualified Non-Volatile-Memory options. It is specifically designed for next generation automotive, industrial and medical applications operating in extreme temperature ranges from -40 to 175 °C. | 12.09.2025 10:00:00 | Sep | news_2025-10-15_5.jpg | \images\news_2025-10-15_5.jpg | https://www.xfab.com/news/details/article/x-fab-opens-new-cleanroom-at-its-malaysian-site | xfab.com |
| Compact Power Modules for Consumer and Industrial Equipment | Mitsubishi Electric has developed a compact versio... | 12573 | Product Release | Compact Power Modules for Consumer and Industrial Equipment | Mitsubishi Electric has developed a compact version of its DIPIPM power semiconductor modules specifically for use in consumer and industrial equipment such as packaged air conditioners and heat pump heating and hot water systems. The Compact DIPIPM series comprises the PSS30SF1F6 (30 A / 600V) and the PSS50SF1F6 (50 A / 600 V). By utilizing reverse-conducting IGBTs (RC-IGBTs), the module’s footprint has been reduced to almost 53 % of that of the company’s conventional Mini DIPIPM Ver.7, enabling more compact inverter substrates in packaged air conditioners and other applications. In 1997 Mitsubishi Electric commercialized the DIPIPM intelligent power semiconductor module with a transfer mold structure; this integrated switching elements and the control ICs that drove and protected them. Despite the smaller product size, the use of high-heat dissipation insulating sheet material suppresses temperature rise at the junction, achieving a current rating of 50 A. An additional interlock function contributes to the simplification of inverter substrate design, but it also simplifies the short-circuit protection design of inverter substrates. By maintaining the same insulation distance between terminals and the heat sink as that of conventional products, replacement of those products is facilitated. Furthermore, the lower limit of the continuous operating temperature is now extended to -40 °C. | 11.09.2025 06:30:00 | Sep | news_2025-10-15_10.jpg | \images\news_2025-10-15_10.jpg | https://www.mitsubishielectric.com/en/pr/2025/0911/ | mitsubishielectric.com |
| 500 W integrated Power Supplies for High-Rel Applications | GAIA Converter has launched the GRD-50A-M series o... | 12580 | Product Release | 500 W integrated Power Supplies for High-Rel Applications | GAIA Converter has launched the GRD-50A-M series of scalable 500 W integrated power supplies for high-reliability markets such as military and aerospace. This family of commercial-off-the-shelf board power supplies, designed for 24 V<sub>DC</sub> and 28 V<sub>DC</sub> input, complies with major military standards, including MIL-STD-1275, MIL-STD-704, and MIL-STD-461. Key specifications and features include a 16-38 V<sub>DC</sub> permanent input voltage with transient voltage protection of up to 100 V<sub>DC</sub>, as well as reverse polarity and overload protection. The power supplies offer a total output power of 500 W with 12 V<sub>DC</sub>, 15 V<sub>DC</sub>, 24 V<sub>DC</sub> or 28 V<sub>DC</sub> output voltage. The GRD-50A-M series features an overall efficiency of 89 %, with full protection for output short circuit (hiccup mode), overvoltage, and overtemperature. The series features 1500 V<sub>DC</sub> primary-secondary isolation and 500 V<sub>DC</sub> chassis ground isolation. Overall board dimensions are 255 × 70 × 24.25 mm³ and operating temperatures extend from -40 °C to +85 °C base-plate. Furthermore, the GRD-50A-M comes in a range of different configuration options, including board only (/B), coated (/V), and parallel (/P). | 10.09.2025 13:30:00 | Sep | news_2025-10-15_17.png | \images\news_2025-10-15_17.png | https://www.gaia-converter.com/product-overview/power-solutions/ | gaia-converter.com |
| Power Supply Unit Reference Design for AI Data Centers and Servers | Infineon Technologies has introduced a 12 kW refer... | 12559 | Product Release | Power Supply Unit Reference Design for AI Data Centers and Servers | Infineon Technologies has introduced a 12 kW reference design for high-performance power supply units (PSUs), specifically designed for AI data centers and server applications. The reference design offers high efficiency and high-power density, and leverages all relevant semiconductor materials silicon, silicon carbide and gallium nitride. It is aimed at research and development engineers, hardware designers, and developers of power electronics systems. To achieve high-performance levels, the design leverages advanced power conversion topologies in both the AC/DC and DC/DC power stages. The front-end AC/DC converter features a 3-level flying capacitor interleaved power factor correction topology, delivering peak efficiency above 99.0 percent while reducing magnetic component volume. This is achieved by Infineon’s CoolSiC™ technology. The isolated DC/DC converter features a full-bridge LLC resonant converter and offers peak efficiency above 98.5 percent, enabled by using two planar high-frequency transformer and Infineon’s CoolGaN™ technology. These architectures, combined with the company’s latest wide-bandgap technologies, achieve a power density of up to 113 W/in³. Another key feature of the 12 kW PSU reference design is the bidirectional energy buffer, which is integrated into the overall power supply topology. This converter enables compliance with hold-up time requirements while significantly reducing capacitance requirements. Furthermore, the energy buffer provides a grid-shaping function, improving system reliability and limiting both fluctuations and the rate of change of power drawn from the grid during transient events. | 10.09.2025 10:30:00 | Sep | news_2025-10-01_15.jpg | \images\news_2025-10-01_15.jpg | https://www.infineon.com/market-news/2025/INFPSS202509-142 | infineon.com |
| Commercial Launch of 200 mm SiC Materials Portfolio; ready to Manufacture at Scale | Wolfspeed announced the commercial launch of its 2... | 12549 | Industry News | Commercial Launch of 200 mm SiC Materials Portfolio; ready to Manufacture at Scale | Wolfspeed announced the commercial launch of its 200 mm SiC materials products. Wolfspeed is also offering 200 mm SiC epitaxy for immediate qualification, which, when paired with the company’s 200 mm bare wafers, delivers high scalability and improved quality, enabling the next generation of high-performance power devices. The improved parametric specifications of the 200 mm SiC bare wafers at 350 µm thickness and "enhanced, industry-leading doping and thickness uniformity of the 200 mm epitaxy" is claimed to enable "device makers to improve MOSFET yields, accelerate time-to-market, and deliver more competitive solutions across automotive, renewable energy, industrial, and other high-growth applications". | 10.09.2025 10:00:00 | Sep | news_2025-10-01_5.png | \images\news_2025-10-01_5.png | https://www.wolfspeed.com/company/news-events/news/wolfspeed-announces-the-commercial-launch-of-200mm-silicon-carbide-materials-portfolio-unlocking-the-industrys-ability-to-manufacture-at-scale/ | wolfspeed.com |
| 3 kA TVS Diode in Compact Surface Mount Package | Littelfuse launched the DFNAK3 Series of High-Powe... | 12563 | Product Release | 3 kA TVS Diode in Compact Surface Mount Package | Littelfuse launched the DFNAK3 Series of High-Power TVS Diodes. These surface mount devices deliver 3 kA (8/20 µs) surge current protection - claimed to be the highest available in such a small footprint - making them suited for safeguarding DC-powered systems and Power over Ethernet (PoE) applications in demanding environments. Unlike traditional high-surge TVS diodes that come in bulky axial-leaded or large surface mount packages, the DFNAK3 Series uses a compact DFN package - "making it the smallest 3 kA-rated TVS diode on the market today". It offers a 70 % smaller footprint than overcoated alternatives and is also 70 % lower in height than standard SMD-type coated packages. This enables space-constrained, high-density PCB designs without compromising surge performance or system robustness. Engineered to meet IEC 61000-4-5 Level 4 requirements, the DFNAK3 Series provides an alternative to standard TVS diodes, MOVs, and GDTs. The surface mount configuration also supports cost-effective, automated PCB assembly, reducing overall production complexity. | 09.09.2025 14:30:00 | Sep | news_2025-10-01_19.jpg | \images\news_2025-10-01_19.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/littelfuse-launches-industrys-smallest-3-ka-tvs-diode-in-compact-surface-mount-package | littelfuse.com |
| MoU to develop high-performance GaN-based Inverters for Light Evs | Infineon Technologies and Lingji Innovation Techno... | 12545 | Industry News | MoU to develop high-performance GaN-based Inverters for Light Evs | Infineon Technologies and Lingji Innovation Technology, a subsidiary of Ninebot, signed a Memorandum of Understanding (MoU) to further drive gallium nitride technology in the area of light electric vehicles (LEV). Infineon provides GaN products supporting Lingji to develop electric two-wheeler inverter systems based on Infineon’s new-generation CoolGaN™ G5 power transistors. Specializing in smart control technologies, Lingji will use its algorithms to target improved drivetrain efficiency at higher power density levels and higher switching frequencies. Considering China’s new standard, that e-Scooter’s plastic mass shall not exceed 5.5 % of vehicle mass, GaN became a preferred choice as it can reduce the number of passive components for space optimization. The MoU aims to design GaN motor drive technologies for 48 V – 72 V solutions to provide compatible core components for high-end models and shared mobility scenarios. For consumers, LEVs stand out as an affordable and accessible entry point into electric mobility. Unlike cars, LEVs typically do not rely on extensive charging infrastructure, as removable batteries allow users to charge at home using standard electrical sockets. Industry analyst McKinsey estimates that this market will reach $340 billion by 2030. Both Infineon and Lingji think that LEVs, with their affordability, ease of access, and environmental benefits, "are leading the transition to vehicle electrification around the world". | 09.09.2025 06:00:00 | Sep | news_2025-10-01_1.jpg | \images\news_2025-10-01_1.jpg | https://www.infineon.com/market-news/2025/INFPSS202509-141 | infineon.com |
| Fabless GaN Manufacturer changes CEO | Wise Integration appointed Ghislain Kaiser as Chie... | 12551 | People | Fabless GaN Manufacturer changes CEO | Wise Integration appointed Ghislain Kaiser as Chief Executive Officer. Kaiser succeeds CEO and co-founder, Thierry Bouchet, who will continue to serve as Chief Technology Officer and General Manager, leading the worldwide R&D and driving the technological vision. In 2006, Kaiser cofounded Docea Power, a French EDA startup pioneering full-chip, system-level power and thermal modelling, with the vision of addressing the growing power-consumption and thermal challenges in IC and platform design. As CEO, he led the company to domain leadership and its acquisition by Intel in 2015. He then joined Intel, where for the next decade he held senior director roles, most recently overseeing system-simulation engineering and worldwide customer-enablement organization. Those programs tackled critical power, thermal, and performance challenges in designing consumer, data-center, and AI systems. Kaiser began his career at STMicroelectronics, where he held technical and leadership positions across test and product engineering, design, and architecture teams. ‘Wise Integration spun out from CEA Leti in 2020 using the institute’s GaN-on-silicon R&D platform. | 08.09.2025 12:00:00 | Sep | news_2025-10-01_7.jpg | \images\news_2025-10-01_7.jpg | https://wise-integration.com/wise-integration-appoints-ghislain-kaiser-successful-high-tech-entrepreneur-former-intel-executive-as-ceo-to-lead-global-growth/ | wise-integration.com |
| Distribution Agreement for Transformers and Coils | Anglia Components has signed an exclusive agreemen... | 12570 | Industry News | Distribution Agreement for Transformers and Coils | Anglia Components has signed an exclusive agreement for UK and Ireland with Hahn, a German manufacturer of standard and custom transformers and inductive coils. The product range includes among other products parts targeted at switch-mode power supplies, EMC and boiler-ignition. Hahn was one of the first winding goods manufacturers to implement the stringent requirements of DIN ISO 9001:2015 and has optimized its processes and quality management to meet even tougher VDA Volume 6.3 (Automotive Standard) regulations. | 08.09.2025 11:00:00 | Sep | news_2025-10-15_6.jpg | \images\news_2025-10-15_6.jpg | https://www.anglia-live.com/NewsArticles/NewsArticle.aspx?Article=5989 | anglia-live.com |
| High-Efficiency Power Chokes | ITG Electronics highlights its portfolio of power ... | 12557 | Product Release | High-Efficiency Power Chokes | ITG Electronics highlights its portfolio of power factor correction (PFC) chokes: the PFC282820 Series, purpose-built for 800 – 5000 W continuous conduction mode PFC boost converter applications in high-wattage industrial and automotive systems. Featuring a 27.5 mm × 20 mm footprint with a height of 28.5 mm, the PFC282820 Series helps design engineers to meet demanding power density requirements without sacrificing efficiency. A wider configuration (27.5 mm × 28.5 mm) is also available to support higher current handling needs, all within the same 5,000 W power ceiling. Part of ITG’s Cubic Design PFC Choke lineup, the PFC282820 Series utilizes flat wire and a square core to deliver enhanced power density and thermal performance compared to traditional toroidal alternatives. The series is engineered to support the evolving requirements of AC to DC power conversion in next-generation industrial and automotive electronics. The PFC282820 Series supports inductance ranges from 33 – 330 µH, with custom values available upon request. High-current output options can handle up to 46 A, with approximately 50 % roll off for superior performance under load. | 08.09.2025 08:30:00 | Sep | news_2025-10-01_13.png | \images\news_2025-10-01_13.png | https://www.itg-electronics.com/en/category/4 | itg-electronics.com |
| 3.3 kV SiC MOSFET Lineup and Linecard | NoMIS Power Corporation announced the commercial r... | 12564 | Product Release | 3.3 kV SiC MOSFET Lineup and Linecard | NoMIS Power Corporation announced the commercial release of its first 3.3 kV SiC MOSFET, the NoMIS N3PT080MP330 - a planar device with an on-resistance of 80 mΩ (34 A) and "best-in-class figures of merit". Key application areas include battery energy storage systems (BESS), renewable energy converters, transportation electrification, and industrial motor drives. The company offers the N3PT080MP330K 3.3 kV SiC MOSFET in TO-247 4L with high voltage creepage notch for industrial environments. This device is complemented by NoMIS Power’s 160 mΩ SiC bi-directional switches, giving designers multiple options to precisely match device performance to application requirements. The 3.3 kV lineup will expand later this year with the launch of a 50 mΩ (55 A) SiC MOSFET, followed in 2026 by a 25 mΩ (109 A) SiC MOSFET. Samples of are available in both bare die (binned by threshold voltage) and discrete package for temperatures up to 175 °C. In energy and infrastructure the devices are suited for battery energy storage systems (BESS), high-power solar inverters, and DC solid-state circuit breakers (SSCBs) that improve efficiency and resilience in medium- and high-voltage networks, while the main applications in the transportation and marine sector are railway traction systems, heavy-duty EVs (buses & trucks), agriculture and construction machinery, marine propulsion, and ship-to-shore power for ports. In charging and industrial systems the devices enable ultra-fast EV charging stations and large industrial motor drives with power conditioning and processing control. | 05.09.2025 15:30:00 | Sep | news_2025-10-01_20.jpg | \images\news_2025-10-01_20.jpg | https://nomispower.com/news/nomis-power-expands-sic-portfolio-with-new-3-3-kv-sic-mosfet-lineup-for-medium-voltage-power-electronics-applications/ | nomispower.com |
| 200 V Family of SuperQ-based MOSFETs | iDEAL Semiconductor has announced the first of its... | 12544 | Product Release | 200 V Family of SuperQ-based MOSFETs | iDEAL Semiconductor has announced the first of its 200 V family of SuperQ™-based MOSFETs has entered mass production, with four additional 200 V devices now sampling. The first 200 V device to reach mass production, the iS20M028S1P, is a 25 mO MOSFET in a TO-220 package. iDEAL’s lowest-resistance 200 V devices, now sampling in TOLL and D²PAK-7L, achieve a maximum R<sub>DS(on)</sub> of just 5.5 mΩ. "By expanding SuperQ into 200 V, iDEAL is proving that silicon innovation is far from over," said Mark Granahan, CEO and Founder of iDEAL Semiconductor. "These results show that we can deliver the lowest resistance and superior switching behavior while maintaining the manufacturability, reliability, and cost advantages of silicon. It’s a major milestone for our company and for customers looking to push efficiency forward." Target applications for the 200 V SuperQ family include motor drives, LED lighting, battery protection, AI servers, isolated DC/DC power modules, USB-PD adapters, and solar. | 04.09.2025 15:30:00 | Sep | news_2025-09-15_22.jpg | \images\news_2025-09-15_22.jpg | https://idealsemi.com/ideal-semiconductor-announces-200-v-family-of-superq-based-mosfets-with-industry-leading-cost-x-performance/ | idealsemi.com |
| Three-Phase Sinewave Filter | EMIS has announced the release of its TPQS3113 Thr... | 12541 | Product Release | Three-Phase Sinewave Filter | EMIS has announced the release of its TPQS3113 Three-Phase Sinewave Filter, designed to improve power quality, protect connected equipment, and extend operating lifetimes in demanding industrial applications. Modern compact variable frequency drives (VFDs) that utilize high-speed IGBT switching transistors generate significant harmonic distortion. The TPQS3113 filter smooths these pulse width modulated (PWM) signals into near-perfect sinewaves, providing dV/dt protection, reducing motor losses, and increasing load efficiency. This results in longer motor lifespans, enhanced system reliability, and reduced downtime. In addition to motors, the TPQS3113 also benefits other sensitive equipment such as computers, power converters, and automation systems by minimizing voltage and current waveform distortions. | 04.09.2025 12:30:00 | Sep | news_2025-09-15_19.jpg | \images\news_2025-09-15_19.jpg | https://emisglobal.com/products/power-quality/output-filters/three-phase-sinewave-filter/pqsw/ | emisglobal.com |
| SiC MOSFETs Adopted in Inverter Brick | ROHM and Schaeffler have started mass production o... | 12523 | Industry News | SiC MOSFETs Adopted in Inverter Brick | ROHM and Schaeffler have started mass production of a new high-voltage inverter brick equipped with ROHM’s SiC MOSFET bare chips as part of their strategic partnership. The inverter brick is intended for a major Chinese car manufacturer. The Schaeffler inverter subassembly is the essential power device building block (brick) to control the electric drive via logic signals. This is where the high-frequency current pulses are produced that set the vehicle’s electric motor in motion. The performance characteristics of the inverter brick now being produced are impressive: Schaeffler increased the output of the brick by increasing the maximum possible battery voltage to much more than the usual 800 V – and with RMS currents of up to 650 A, which turn the sub-module into a compact power pack. "Through our strategic approach of incorporating scalability and modularity into our e-mobility solutions – from individual components to a highly integrated electric axle – we developed the readily integrated inverter brick. Based on our generic platform development, it took us just one year to bring this optimal product for the popular X-in-1 architectures to volume production readiness," says Thomas Stierle, CEO of the E-Mobility Division at Schaeffler. | 04.09.2025 06:00:00 | Sep | news_2025-09-15_1.jpg | \images\news_2025-09-15_1.jpg | https://www.rohm.com/news-detail?news-title=2025-09-04_news_schaeffler&defaultGroupId=false | rohm.com |
| Expansion of European Distribution Centre and Headquarters | TTI IP&E – Europe has officially begun constructio... | 12527 | Industry News | Expansion of European Distribution Centre and Headquarters | TTI IP&E – Europe has officially begun construction to expand its European Distribution Centre (EDC) and headquarters. With the groundbreaking ceremony, the project is now underway in Maisach-Gernlinden. Completion of the building exterior is scheduled for November 2026. Installation of the intralogistics and warehouse technology will then begin. Full completion of the EDC, including all building components and infrastructure, is planned for March 2028. The expansion will double TTI’s footprint at the site, adding 51,000 m² of space directly connected to the existing buildings. This includes approximately 30,000 m² of new warehouse and logistics capacity and 6,000 m² of additional office and administrative space. The project is backed by Invesco Real Estate, Munich, as investor and owner, and executed by BREMER Stuttgart GmbH as general contractor. The expanded EDC will feature state-of-the-art automation, including the world’s largest Autostore system built on a platform structure. This will enhance material flow efficiency and ensure faster, more reliable deliveries across Europe. The expansion will also create around 200 new ergonomic and modern jobs, adding to the current workforce of approximately 700 employees. | 03.09.2025 10:00:00 | Sep | news_2025-09-15_5.jpg | \images\news_2025-09-15_5.jpg | https://www.ttieurope.com/content/ttieurope/en.html | ttieurope.com |
| ECPE Workshop ’Ultra-High-Voltage Power Electronics’ | The shift to renewables demands a stronger, smarte... | 12525 | Event News | ECPE Workshop ’Ultra-High-Voltage Power Electronics’ | The shift to renewables demands a stronger, smarter grid. Medium Voltage DC (MVDC) has been identified as a key enabler, allowing efficient long-distance power transmission and mega-watt EV charging. But how do we control such high voltages? Discover the answer with Europe’s leading experts during this workshop November 12 - 13 in Lyon, France or online. Explore the development of cutting-edge SiC semiconductors to facilitate the high-voltage converters shaping the future of energy. | 03.09.2025 08:00:00 | Sep | news_2025-09-15_3.jpg | \images\news_2025-09-15_3.jpg | https://www.ecpe.org/events/workshops-tutorials/all/details/evt/mdl/ed/662/eyJtZjEiOnsibWx1MSI6Inx8fHx8fHwifSwiZWYyIjp7ImVsdTEiOiIxfGx1ZmVkaXRtZWRpYWxpYnJhcnl8TWVkaWFMaWJyYXJ5RXZlbnRMaXN0fE1lZGlhTGlicmFyeXxldmVudExpc3R8Mjg3fDIwMzd8IiwiZXBjOSI6dHJ1ZX0sInJmMyI6eyJyb2FkbWFwTGlzdFVyaSI6Inx8fHx8fHwifSwiYmY0Ijp7ImJsdTEiOiJ8fHx8fHx8In0sImxkNSI6eyJsZHUxIjoifHx8fHx8fCJ9fQ==/?cHash=8d2aa95ac7f652b0a2591b3073861ccc | ecpe.org |
| Automotive High-Withstand Voltage LDO Linear Regulator IC | ABLIC launched sales of the S-19230/1 Series, an a... | 12543 | Product Release | Automotive High-Withstand Voltage LDO Linear Regulator IC | ABLIC launched sales of the S-19230/1 Series, an automotive high-withstand voltage regulator IC. Recently, the power consumption of automotive electronic components like various ECUs and infotainment systems has been steadily increasing. As a countermeasure, there’s a growing trend to increase the voltage of automotive auxiliary batteries from the conventional 12V to 48V. Auxiliary batteries supply power to electronic components via wire harnesses. By quadrupling the voltage to supply the same power, the current can be reduced to one-quarter. This enables the use of thinner wire harnesses, contributing to lighter vehicle designs and improved fuel or electric power efficiency. The S-19230/1 Series supports 48V, 24V, and 12V auxiliary batteries, thanks to its high input voltage tolerance of up to 80V. It also achieves a low operating current of 2.0µA, which is crucial for supplying power to constantly operating sensors and CAN/LIN transceivers, helping to reduce the system’s standby current. Additionally, this product is the first ABLIC voltage regulator to integrate an open-loop protection circuit. The protection circuit suppresses the rise in output voltage to a certain level if the wiring between the external resistor and the IC - used for setting the output voltage - is broken (open fault). This protection circuit eliminates the need for conventional external components used for overvoltage protection, contributing to cost reduction, space saving, and enhanced safety. | 02.09.2025 14:30:00 | Sep | news_2025-09-15_21.png | \images\news_2025-09-15_21.png | https://www.ablic.com/en/semicon/news/2025/09/02/s-19230-1/ | ablic.com |
| 600 W Automotive TVS Diode | Littelfuse announced the launch of the SZSMF6L Ser... | 12542 | Product Release | 600 W Automotive TVS Diode | Littelfuse announced the launch of the SZSMF6L Series of unidirectional and bidirectional TVS diodes. These 600 W automotive-grade devices provide robust protection against high-energy transients in a compact, surface-mount SOD-123FL package, making them ideal for increasingly space-constrained automotive and electric vehicle (EV) designs. Building on the success of the 400 W SZSMF4L Series introduced in 2023, the SZSMF6L Series delivers 50% higher peak power handling while maintaining the same compact footprint. The improved surge protection and enhanced clamping performance help safeguard critical automotive systems exposed to voltage spikes from switching events, load dumps, or electrostatic discharge (ESD). "The SZSMF6L Series addresses the evolving demands of EV and automotive system designers who need greater transient protection without compromising board space," said Charlie Cai, Director Product Marketing SBU at Littelfuse. "With the transition to zonal architectures and the continued push for miniaturization, this 600 W solution offers engineers a more robust and thermally reliable alternative to the SZSMF4L for high-stress environments." The SZSMF6L TVS diodes enable more efficient, compact, and rugged designs that meet the growing electrical demands of next-generation vehicles. Their performance and footprint compatibility allow seamless upgrade paths from the SZSMF4L when additional power handling is required. | 02.09.2025 13:30:00 | Sep | news_2025-09-15_20.jpg | \images\news_2025-09-15_20.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/littelfuse-adds-600-w-szsmf6l-series-to-automotive-tvs-line-for-high-energy-transient-protection | littelfuse.com |
| GaN-on-Si Foundry Services | X-FAB Silicon Foundries is building on its experti... | 12524 | Industry News | GaN-on-Si Foundry Services | X-FAB Silicon Foundries is building on its expertise in gallium nitride (GaN) processing technology for high-power applications by introducing GaN-on-Si foundry services for dMode devices as part of its XG035 technology platform. The move further leverages X-FAB’s advantage as a pure-play foundry that now offers a set of processing technologies for GaN and other WBG materials – including SiC – to help fabless semiconductor companies bring their designs to life. X-FAB provides the GaN-on-Si technology from its state-of-the-art 8-inch fab in Dresden, one of six production facilities operated by the company worldwide. The Dresden fab hosts a wide range of specialized processing equipment, measurement tools and technologies that are optimized for GaN development and production, together with analog CMOS, in a stable, trusted, automotive-qualified fab environment. Tools on site have been optimized to handle the thicker GaN-on-Si wafers required by customers in sectors such as automotive, data center, industrial, renewable energy, medical, and others. Thanks to strong high-voltage GaN expertise over several years, the company’s in-house expertise now extends to GaN-on-Si foundry services for dMode devices following the recent release of its XG035 dMode technology as an open foundry platform. The process includes dMode HEMT transistors (scalable from 100V to 650V), often used in power conversion applications. In addition, X-FAB offers customer-specific GaN technologies including dMode, eMode HEMTs as well as Schottky Barrier Diodes, which are popular for high-frequency rectification, power supply, and solar panel applications, among others. | 02.09.2025 07:00:00 | Sep | news_2025-09-15_2.png | \images\news_2025-09-15_2.png | https://www.xfab.com/news/details/article/x-fab-now-offers-gan-on-si-foundry-services | xfab.com |
| New Brand Identity and Tagline: "In Everything, Better" | TDK Corporation announces the launch of its new br... | 12532 | Industry News | New Brand Identity and Tagline: "In Everything, Better" | TDK Corporation announces the launch of its new brand identity and tagline: "In Everything, Better". This serves as a significant driver of the Long-term Vision "TDK Transformation" and captures the company’s unique venture spirit, its commitment to progress, and its vision for a sustainable future. For 90 years, TDK has quietly shaped the world from within. TDK has been pushing for progress and boldly reinventing itself; from ferrite cores to cassette tapes, to powering the digital age with advanced components, sensors, and batteries, leading the way towards a sustainable future. The company’s technologies nowadays power the devices and systems that define modern life: from smartphones and electric vehicles to industrial applications and energy systems. With over 100,000 passionate team members worldwide, united by a start-up mentality and a drive for innovation, TDK is an enabler behind the scenes, creating impact from within. "In Everything, Better" - the new tagline, debuting in September 2025, is not just a phrase; it is a declaration of TDK’s promise to always strive for better, for ourselves and for society. Noboru Saito, President & CEO of TDK Corporation mentioned "The new brand identity aligns with our Long-term Vision of TDK Transformation, and it is rooted in our Corporate Motto of ’Contributing to culture and industry through creativity’ and Corporate Principles of ’Vision, Courage, and Trust’. It is what we believe, how we act, and how we communicate. It is who we are today, where we are going in the future and the legacy we create." | 01.09.2025 15:00:00 | Sep | news_2025-09-15_10.jpg | \images\news_2025-09-15_10.jpg | https://www.tdk.com/en/news_center/press/20250901_01.html | tdk.com |