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| "ABC of Thermal Management" Textbook | "ABC of Thermal Management" is a textbook publishe... | 14042 | Industry News | "ABC of Thermal Management" Textbook | "ABC of Thermal Management" is a textbook published by Würth Elektronik. It guides engineers through the basic principles of thermal management, explains thermal models, and demonstrates practical construction decisions that are required for the development of reliable electronic systems under real operating conditions. The book presents a clear and practice-oriented workflow, reaching from the specification of the boundary conditions and the thermal budget, via the design of the casing and the circuit-board layout, all the way to the selection of cooling solutions. "Although thermal problems are principally well understood in general, the way in which heat is transferred by heat conduction, convection, and radiation is often treated as a minor issue and is given attention only when a design is already running too hot. The challenge here is to comprehend the interplay between the components, their environment, and the cooling path, and then to master it from the outset, starting with the basic principles, going on to the selection of materials and the design-in workflow, all the way to implementing definitive applications", says Alexander Gerfer, CTO of the Würth Elektronik eiSos Group, in his introduction to the "ABC of Thermal Management". "This book is the culmination of the engagement and the technical competence of a broad number of colleagues and other contributors. Their joint efforts have created a valuable source of knowledge for everyone dealing with thermal management in electronic applications." | 11.11.2026 13:00:00 | Nov | news_2026-11-15_8.jpg | \images\news_2026-11-15_8.jpg | https://www.we-online.com/en/news-center/press/press-releases?d=abc-of-thermal-management | we-online.com |
| 300-Millimeter Power SiC Wafer | Infineon Technologies has successfully processed 3... | 14036 | Industry News | 300-Millimeter Power SiC Wafer | Infineon Technologies has successfully processed 300-millimeter silicon carbide wafers into functional power devices at its fab in Villach, Austria. It was realized by utilizing existing silicon (Si) manufacturing equipment. Chip production on 300 mm wafers is technologically more advanced and significantly more efficient than 200 mm wafers, since the larger wafer diameter offers 2.3 times more chips per wafer. This demonstrates the potential of future full-scale industrialization of SiC on 300-millimeter wafers. Infineon will plan the 300-millimeter SiC technology and ramp timing in close collaboration with its customers and partners, while further executing on its 200-millimeter SiC manufacturing roadmap. SiC is a key semiconductor material for highly efficient power conversion. Its material properties enable lower power loss, higher power density and efficient operation at high voltages and temperatures for example in traction inverters, on-board chargers, EV chargers, large scale energy storage and industrial drives as well as uninterruptible power supplies. Demand is also rising in AI data centers with new roles for SiC in solid-state transformers, circuit breakers and power supply units. Infineon addresses these applications with a broad CoolSiC™ portfolio. In parallel, Infineon has also successfully proofed the feasibility of its Cold Split technology with 300-millimeter SiC at its Dresden, Germany, site. Cold Split separates wafers from a SiC boule with less material loss and substantially reduced processing time than conventional wire sawing, so more wafers can be obtained from the same crystal with compared to less capital expenditure. Both developments position Infineon well to scale SiC technology in line with market demand and meet the evolving needs of its customers. | 09.11.2026 07:00:00 | Nov | news_2026-11-15_2.jpg | \images\news_2026-11-15_2.jpg | https://www.infineon.com/press-release/2026/infpr202611-028 | infineon.com |
| Four-Terminal Shunt Power Resistors for Accurate High-Current Measurement | Bourns announced its Bourns® MSF Series Four-T... | 14052 | Product Release | Four-Terminal Shunt Power Resistors for Accurate High-Current Measurement | Bourns announced its Bourns® MSF Series Four-Terminal Shunt Power Resistors, including the MSF-2 and MSF-2L models, for accurate current measurement in high-current power systems. The series combines a four-terminal Kelvin measurement design with a 5 W power rating and resistance values from 0.5 mΩ to 5 mΩ. Maximum current is 100 A at 0.5 mΩ, with lower current at higher resistance values to stay within the 5 W rating. The MSF Series separates the load-current path from the voltage-measurement path through its four-terminal Kelvin configuration, minimizing measurement errors caused by lead resistance. A Manganin® resistance element welded to oxygen-free high-conductivity copper terminals provides thermal stability, while a flame-resistant, high-temperature silicone coating protects the resistor. The series operates from -55 °C to +275 °C and provides a temperature coefficient of resistance (TCR) of ±100 ppm/°C from 0 °C to +85 °C. Target Applications are battery management systems (BMS), power supplies and power conversion equipment, industrial motor controls, current monitoring circuits, welding equipment, energy storage systems as well as industrial automation and control systems. | 04.11.2026 15:30:00 | Nov | news_2026-11-15_18.jpg | \images\news_2026-11-15_18.jpg | https://www.bourns.com/news/press-releases/pr/2026/11/04/bourns-introduces-msf-series-four-terminal-shunt-power-resistors-for-accurate-high-current-measurement | bourns.com |
| Setting up a dedicated Semiconductor Division | Bosch plans to generate some 5 billion euros in se... | 14041 | Industry News | Setting up a dedicated Semiconductor Division | Bosch plans to generate some 5 billion euros in semiconductor sales by 2030. To this end, the company will put its semiconductor business on a firmer footing as part of the reorganization of its corporate structure and the evolution of Bosch Mobility, which was announced at the end of October 2026. Effective January 1, 2028, Bosch will transfer its semiconductor operations to a new division called Semiconductors. The business will continue to be assigned to the Mobility business sector. Bosch’s semiconductor operations are currently part of its Mobility Electronics division. With approximately 40 semiconductor sites worldwide dedicated to research, development, and manufacturing, Bosch has a global presence. In recent years, the company has invested approximately 3 billion euros in its wafer fabs in Dresden and Reutlingen. In Roseville, California, Bosch is spending about 2 billion U.S. dollars to equip its plant with facilities to manufacture silicon carbide chips. The company also plans to further expand its test center in Penang, Malaysia, by the middle of the next decade. What is more, Bosch holds a 10 percent stake in the European Semiconductor Manufacturing Company (ESMC) GmbH, a joint venture in Dresden. | 03.11.2026 12:00:00 | Nov | news_2026-11-15_7.jpg | \images\news_2026-11-15_7.jpg | https://www.bosch-presse.de/pressportal/de/en/focus-on-promising-markets-bosch-is-strengthening-its-semiconductor-business-with-a-dedicated-division-286784.html | bosch.com |
| DC Power Supplies with five interconnectable Channels | Rohde & Schwarz introduced an additonal member of ... | 14046 | Product Release | DC Power Supplies with five interconnectable Channels | Rohde & Schwarz introduced an additonal member of the R&S HMP power supply series. Available in spring 2027, the instrument offers higher channel and power density as well as improved residual ripple of less than 350 microvolts RMS. It provides five channels with up to 180 W per channel and a maximum total output power of 560 W. Each channel can be configured for up to 15 A and 35 V. For higher voltages, channels can be connected in series. For higher currents, channels can be connected in parallel. For higher total power, or for applications requiring up to 64 channels, several instruments can be connected and controlled centrally. Connected instruments synchronize automatically, enabling users to control and analyze all channels individually. These features make the R&S HMP5050 well-suited for automated test systems in production and for any application that requires a precise multichannel power supply close at hand. | 02.11.2026 09:30:00 | Nov | news_2026-11-15_12.jpg | \images\news_2026-11-15_12.jpg | https://www.rohde-schwarz.com/uk/about-us/news-press/all-news/rohde-schwarz-presents-a-new-generation-of-dc-power-supplies-with-five-interconnectable-channels_229356-1706625.html | rohde-schwarz.com |
| Transparent Silicon Carbide Technology | Wolfspeed announced the commercial introduction of... | 14040 | Industry News | Transparent Silicon Carbide Technology | Wolfspeed announced the commercial introduction of its proprietary transparent silicon carbide (TSiC™) technology expanding the potential of silicon carbide to enable next-generation augmented reality (AR), quantum computing and advanced optical applications. The optical-grade TSiC substrates are engineered for exceptionally low optical absorption and superior wafer flatness. Silicon carbide’s high refractive index, low birefringence, hardness and thermal conductivity make it a promising material for next-generation AR waveguides, supporting wider fields of view, improved image quality and more compact wearable devices. Beyond AR, TSiC technology offers significant potential in quantum computing, with the ability to host quantum bits (qubits), preserve their quantum states and transmit quantum information through light - all within a single silicon carbide crystal. Unlike many alternative materials, silicon carbide can support all these functions. The company continues advancing its 200 mm optical-grade substrates while developing 300 mm TSiC technology to support future market requirements. | 29.10.2026 11:00:00 | Oct | news_2026-11-15_6.jpg | \images\news_2026-11-15_6.jpg | https://www.wolfspeed.com/company/news-events/news/wolfspeed-commercially-introduces-transparent-silicon-carbide-technology-for-augmented-reality-and-quantum-computing/ | wolfspeed.com |
| Integrated Transformer Driver for Isolated Power Supplies | RECOM expands its power IC portfolio with the RVP0... | 14045 | Product Release | Integrated Transformer Driver for Isolated Power Supplies | RECOM expands its power IC portfolio with the RVP007, an integrated transformer driver for isolated power supplies with an input voltage range of 4.5 – 24 V. The IC integrates four power MOSFETs in a full-bridge topology, enabling compact power supply solutions with minimal external components. Depending on the application design, isolated power supplies with different output voltages and an output power of 1 – 20 W can be realized. In addition to the full-bridge topology, the RVP007 also supports LLC applications. This operating mode can help reduce electromagnetic interference (EMI) and improve power supply efficiency. The switching frequency can be programmed via the CLK pin: Without an external programming resistor, the nominal internal frequency is 250 kHz; with an external resistor, it can be adjusted within a range of 75 – 750 kHz. For controlled startup, the IC features an integrated soft-start function. Dead-time control prevents opposing switches from turning on simultaneously. In addition, the RVP007 provides input overvoltage protection, current limiting, as well as short-circuit and overtemperature protection with automatic recovery. The specified operating temperature range is -40 °C to +125 °C. Typical applications include isolated power supplies for IGBT and SiC gate drivers, industrial control systems such as distributed control systems (DCS) and programmable logic controllers (PLCs), uninterruptible power supply (UPS) systems, and photovoltaic inverters. Further applications include power supplies for telecommunications, radio equipment, precision instruments, and medical equipment. The device is housed in an ESOP8 package measuring 5 mm × 6 mm. | 28.10.2026 08:30:00 | Oct | news_2026-11-15_11.png | \images\news_2026-11-15_11.png | https://recom-power.com/en/company/newsroom/rec-n-integrated-transformer-driver-for-isolated-power-supplies-491.html?3 | recom-power.com |
| Gen4 1200 V and 750 V SiC MOSFETs cut On-Resistance and Switching Energy | SemiQ has announced the availability of its fourth... | 14049 | Product Release | Gen4 1200 V and 750 V SiC MOSFETs cut On-Resistance and Switching Energy | SemiQ has announced the availability of its fourth-generation QSiC™ silicon carbide power devices, launching a family of 1200 V and 750 V SiC bare dies and MOSFETs. SemiQ Gen4 technology incorporates an optimized cell topology, featuring a 36% reduction in cell pitch, along with optimized JFET & P-well implantation. These design improvements enable a 23 % reduction in specific on-resistance (R<sub>on(sp)</sub>) versus previous generations, and have a higher current capability, reduced conduction losses, improved power density and increased overall system efficiency. The family’s 1200 V devices reduce R<sub>DS(on)</sub> by 21 % versus its Gen3 devices (11 vs. 14 Ω). They also offer the possibility to reduce total switching energy by over 11 % (1491 vs. 1677 mJ), while maintaining the same 5 mm × 5 mm die size as its Gen3 1200 V devices. This helps to reduce power losses and thermal load while supporting more compact power-conversion systems. Unlike in previous generations, the Gen4 line up features a 750 V SiC MOSFET. This offers an even lower R<sub>DS(on)</sub> of 9 mΩ and has a total switching energy that is just 871 μJ. The Gen4 MOSFET dies undergo wafer-level-gate-oxide gate burn-in screening at voltages exceeding 1400 V and 800 V respectively. Both are avalanche tested to 800 mJ. Both devices are available in a 4-pin TO-247-4L MOSFET package and as a bare die. They are targeted at high-power applications, including EV charging infrastructure, high-voltage DC/DC and DC/AC converters, solar inverters, switch-mode power supplies, uninterruptible power supplies, induction heating, welding, and motor drives. | 27.10.2026 12:30:00 | Oct | news_2026-11-15_15.jpg | \images\news_2026-11-15_15.jpg | https://semiq.com/semiq-gen4-1200-v-and-750-v-sic-mosfets-cut-on-resistance-by-21-and-switching-energy-by-11/ | semiq.com |
| Power Solutions for 800 V AI Data Centers | Allegro MicroSystems announced a series of product... | 14048 | Product Release | Power Solutions for 800 V AI Data Centers | Allegro MicroSystems announced a series of products for AI data centers and high-performance computing systems that increase power density while helping designers better manage energy use, heat dissipation, and equipment size. As data centers move toward 800 V power distribution and 48 V cooling systems to address growing workloads, they require faster, more efficient and more compact semiconductor solutions. Allegro’s expanded portfolio now includes wide-body higher isolation versions of the ACS37030 and ACS37002 current sensors, the AHV85311 Power-Thru™ isolated gate driver for silicon carbide power systems, and an improved version of the code-free QuietMotion™ A89333 48V motor driver. The ACS37030 and ACS37002 current sensors are now available in wide-body packages with a comparative tracking index (CTI) mold compound enabling 6000 V of galvanic isolation for enhanced electrical safety in high-voltage systems. | 27.10.2026 11:30:00 | Oct | news_2026-11-15_14.jpg | \images\news_2026-11-15_14.jpg | https://www.allegromicro.com/en/about-allegro/newsroom/press-releases/2026/new-power-and-cooling-solutions-for-sustainable-datacenters | allegromicro.com |
| Three-Phase Inverter Evaluation Platforms | Efficient Power Conversion (EPC) announced the ava... | 14044 | Product Release | Three-Phase Inverter Evaluation Platforms | Efficient Power Conversion (EPC) announced the availability of the EPC91124 and EPC91125, two new 100 V three-phase BLDC motor drive evaluation boards designed to simplify the development of next-generation high-performance motion-control systems. These platforms, based on EPC’s latest enhancement-mode GaN FET technology, enable designers to evaluate high-frequency motor drive architectures with operating voltages from 18 V to 80 V and PWM switching frequencies up to 100 kHz (150 kHz max). The boards are designed for applications such as industrial automation, collaborative robots, autonomous mobile robots (AMRs), drones, servo drives, and precision motion control. The EPC91124 features the EPC2361 100 V eGaN® FET with a typical R<sub>DS(on)</sub> of 0.75 mΩ, delivering up to 35 A<sub>RMS</sub> continuous phase current and 45 A<sub>RMS</sub> peak. The EPC91125 is based on the EPC2367 100 V eGaN FET with a typical R<sub>DS(on)</sub> of 1.2 mΩ, providing 30 A<sub>RMS</sub> continuous and 40 A<sub>RMS</sub> peak capability. Both platforms share the same 79 mm × 80 mm footprint, allowing engineers to evaluate different current levels using a common hardware and software ecosystem. The evaluation boards are complete inverter development platforms that include gate drivers, three-phase current sensing, phase and DC bus voltage monitoring, on-board housekeeping power supplies, temperature monitoring and encoder/Hall sensor interfaces. This integration lets engineers focus on motor control algorithms and reduces hardware design complexity. The boards are compatible with several digital control platforms, including Microchip dsPIC®, Texas Instruments C2000™, STMicroelectronics STM32, and Renesas RAxT2 controllers. These GaN platforms enable operation at up to 100 kHz. | 27.10.2026 07:30:00 | Oct | news_2026-11-15_10.jpg | \images\news_2026-11-15_10.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3383/epc-expands-100-v-gan-motor-drive-portfolio-with-two-new-three-phase-inverter-evaluation-platforms | epc-co.com |
| SiC and GaN play growing Role in Electronics Design, Manufacturing and more | Silicon carbide (SiC) and gallium nitride (GaN) po... | 14038 | Industry News | SiC and GaN play growing Role in Electronics Design, Manufacturing and more | Silicon carbide (SiC) and gallium nitride (GaN) power devices are expanding their role in electronics, with implications extending beyond component selection to product design, manufacturing capability and supply-chain planning, according to research dubbed "SiC and GaN Power Devices Are Expanding — What the Parts Data (and the Fab Floor) Tell Us" from the Global Electronics Association and Accuris, a provider of engineering intelligence and electronic-component data. The research examines the growing adoption of these technologies in products and infrastructure that require greater energy efficiency, compact designs and reliable power performance, including electric vehicles, renewable-energy systems, AI data centers, communications infrastructure and consumer electronics. Drawing on data from the Accuris Parts Database and manufacturing insight, the research highlights how SiC and GaN are changing product-development, sourcing and printed circuit board requirements. The findings underscore the importance of evaluating these technologies early in design and planning, when decisions about performance, materials and production processes can also affect reliability and supply continuity. SiC gains traction in high-voltage, high-power applications, while GaN is increasingly used where high switching speed and compact power conversion are especially important. These differences mean organizations must align technology choices with application requirements - and account for those choices in design, sourcing and manufacturing planning. The research also highlights the growing importance of collaboration across the electronics value chain. As power devices evolve, the implications extend to board design, materials, fabrication processes, thermal management, component availability and end-product reliability. Considering these factors together can help companies bring next-generation power systems to market efficiently and reliably. | 26.10.2026 09:00:00 | Oct | news_2026-11-15_4.png | \images\news_2026-11-15_4.png | https://www.electronics.org/news-release/silicon-carbide-and-gallium-nitride-play-growing-role-electronics-design-manufacturing | electronics.org |
| Funding to accelerate R&D of Vertical GaN Power Transistors | Vertical Semiconductor has signed a letter of inte... | 14039 | Industry News | Funding to accelerate R&D of Vertical GaN Power Transistors | Vertical Semiconductor has signed a letter of intent with the U.S. Department of Commerce’s CHIPS Research and Development Office (CRDO) to receive up to US-$ 73 million in federal incentives under the CHIPS and Science Act. The proposed incentives are expected to accelerate research and development of next-generation vertical gallium nitride (GaN) power transistors, unlock domestic production of this technology, and strengthen U.S. leadership in power infrastructure for artificial intelligence (AI) and high-performance computing. Spun out of MIT, Vertical Semiconductor is developing vertical GaN FinFET technology that drives extreme efficiency and power density in power systems for AI data centers and critical energy infrastructure. The company is scaling up a transformational technology originally invented with the support of the U.S. Department of Energy’s Advanced Research Projects Agency–Energy (ARPA-E). Led by Vertical Semiconductor in collaboration with commercial partners, this vertical GaN R&D and commercialization initiative would culminate in a first-of-its-kind 2.5-MW AI rack designed to reduce energy losses by 30 %, shrink physical footprint by 50 %, and convert previously wasted electricity into deployable compute capacity. The project would deploy these transistors across the full AI data center power chain, driving compounding performance benefits from the grid to the compute. | 22.10.2026 10:00:00 | Oct | news_2026-11-15_5.jpg | \images\news_2026-11-15_5.jpg | https://www.verticalsemi.com/articles/oct2026-press-release-vertical-semiconductor-73m-loi-crdo | verticalsemi.com |
| 1.8 V Power-Line Protection by using eFuse Ics | Toshiba announces the TCKE5 Series of electronic f... | 14028 | Product Release | 1.8 V Power-Line Protection by using eFuse Ics | Toshiba announces the TCKE5 Series of electronic fuse ICs (eFuses), extending its power-line protection range to support 1.8V supplies in space-constrained electronic equipment. Applications include SD memory cards, USB and HDMI® devices, laptop PCs and gaming consoles. The four devices combine overcurrent and short-circuit protection in a compact package. Operating over an input voltage range of 1.7 V to 5.5 V, the TCKE5 Series supports 1.8 V, 3.3 V and 5 V supplies. An external resistor sets the overcurrent detection threshold, allowing designers to match protection to the requirements of the downstream circuit. A mask time of 2.4 ms (typ.) allows brief current peaks to pass without triggering overcurrent shutdown; if the overcurrent persists beyond this period, the IC switches off its output. A separate short-circuit protection function responds to higher fault currents. The series comprises the TCKE501UA, TCKE501UL, TCKE502UA and TCKE502UL. The UA variants provide automatic retry following a fault, while the UL variants latch off and require an external signal to restart. Designers can choose the recovery behaviour that suits their system. All four devices support a DC output current of up to 1.0 A and are housed in the SOT-353F (UFV) package, measuring 2.0 mm × 2.1 mm × 0.7 mm (typ.). | 22.10.2026 09:30:00 | Oct | news_2026-11-01_10.jpg | \images\news_2026-11-01_10.jpg | https://toshiba.semicon-storage.com/eu/company/news/2026/10/power-management-ics-20261022-1.html | toshiba.semicon-storage.com |
| SiC Power Modules for Energy and Grid Infrastructure | Navitas Semiconductor announced an ultra-high-volt... | 14033 | Product Release | SiC Power Modules for Energy and Grid Infrastructure | Navitas Semiconductor announced an ultra-high-voltage (UHV) SiC power module family for advanced energy and grid infrastructure. The G4H08MT23GB4 2300 V full-bridge module family uses the industry-standard SiCPAK™ form factor and has an R<sub>DSon</sub> of 8 mΩ. It has been developed for use in solid-state transformers, grid-scale battery energy storage systems, solar inverters, and EV megawatt charging infrastructure. These gains are enabled through its deployment of Navitas’ fourth-generation GeneSiC™ Trench-Assisted Planar™ (TAP) architecture, with the launch extending Navitas’ 2300 V and 3300 V ultra-high voltage SiC portfolio. These SiC modules provide the medium-voltage building block for solid-state transformers that convert grid power directly into the high-voltage DC rails used inside AI data center racks. This places the new module family at the center of Navitas’ AI infrastructure portfolio. spanning AI data center and energy and grid infrastructure alongside battery energy storage, solar, EV megawatt charging, hydrogen fuel cell electrolysis and DC-DC conversion, and industrial motor-drive and high-voltage power supply applications. The module family will be qualified to Navitas’ AEC-Plus reliability benchmark, which tests beyond AEC-Q101 and JEDEC standard requirements. A double-pulse test (DPT) system, EVB-UHVSIC-GB-E-DPT-1, is also available on request. | 21.10.2026 14:30:00 | Oct | news_2026-11-01_15.jpg | \images\news_2026-11-01_15.jpg | https://www.navitassemi.com/en/press-releases/navitas-unveils-next-generation-ultra-high-voltage-sic-power-module-to-advance-energy-and-grid-infrastructure-efficiency | navitassemi.com |
| Y1 Safety Capacitors for Operations up to 500 VAC | TDK Corporation has introduced the B3201<sup>&lowa... | 14031 | Product Release | Y1 Safety Capacitors for Operations up to 500 VAC | TDK Corporation has introduced the B3201<sup>∗</sup>A5/B5/C5 series of Y1 safety capacitors designed to suppress EMI in demanding automotive and industrial applications. The metallized polypropylene (MKP) film capacitors are rated for AC voltages of 500 V and DC voltages of up to 1500 V. Featuring a maximum operating temperature of up to +125 °C (with derating), they combine a space-saving footprint with AEC-Q200 Rev. E compliance. Typical applications include xEV power electronics, on-board chargers, EV charging infrastructure, industrial drives, power supplies, renewable energy converters, and energy storage systems. This series offers capacitance values ranging from 0.47 to 33 nF and is available with lead spacings of 15 and 22.5 mm. The smaller B32012 variants measure 5.0 × 10.5 × 18.0 mm³, and the B32013 types extend the capacitance range to 33 nF. Parallel wire leads support conventional through-hole mounting. The components are available untaped or in ammo-pack and reel configurations. The capacitors are rated for continuous operation at 500 VAC and 1500 VDC, respectively, at temperatures of up to +110 °C. At operating temperatures above +110 °C and up to the maximum of +125 °C, the operating voltage must be derated by 1.5% per degree Celsius. Operation within this elevated temperature range is limited to a maximum of 1000 hours. The series is approved according to IEC/EN/UL 60384-14, CSA E60384-14, and GB/T 6346.14. | 21.10.2026 12:30:00 | Oct | news_2026-11-01_13.png | \images\news_2026-11-01_13.png | https://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/tdk-introduces-compact-y1-safety-capacitors-for-operations-up-to-500-v-ac-and-125-c/3709684 | tdk-electronics.tdk.com |
| 100 W USB-C PD Medical Desktop Power Supplies | Bel Fuse announced the SDM100G series, a family of... | 14034 | Product Release | 100 W USB-C PD Medical Desktop Power Supplies | Bel Fuse announced the SDM100G series, a family of 100 W medical desktop power supplies that combines USB-C Power Delivery (PD) with gallium nitride (GaN) technology. As Bel’s first USB Type-C medical power supply line, the series gives medical equipment designers a globally compatible option for powering and charging devices across multiple voltage requirements. The SDM100G series supports five USB-C PD output levels (5 V, 9 V, 12 V, 15 V, and 20 V) enabling a single power platform to support a broad range of devices. C8 and C14 AC inlet options address different regional electrical standards and equipment requirements, while the USB-C interface provides a widely adopted charging standard that can help customers simplify accessories and reduce electronic waste. Built for medical environments, the series carries a Means of Patient Protection (MOPP) safety classification to support protection against electric shock. Integrated overcurrent and short-circuit protection help protect connected equipment and reduce the risk of system failure. The series is certified to IEC/UL 60601-1 and supports global regulatory and EMC requirements, including UL, cUL, UKCA, CE, and FCC. The SDM100G Series is designed for portable medical devices, remote patient-monitoring equipment, mobile medical workstations, and wearable medical devices. It also supports industrial and consumer or IoT applications that benefit from compact, high-efficiency USB-C power delivery. | 20.10.2026 15:30:00 | Oct | news_2026-11-01_16.jpg | \images\news_2026-11-01_16.jpg | https://www.belfuse.com/resources/news/bel-fuse-introduces-sdm100g-100-w-usb-c-pd-medical-desktop-power-supplies | belfuse.com |
| APEC 2027 Early Bird Registration Now Open | Registration is now open for the 42nd Annual Appli... | 14024 | Event News | APEC 2027 Early Bird Registration Now Open | Registration is now open for the 42nd Annual Applied Power Electronics Conference. The APEC 2027 conference and exposition, running March 7-11, 2027 at the Ernest N. Morial Convention Center in New Orleans/Louisiana (USA) continues its long-standing tradition of addressing issues of immediate and long-term interest to the practicing power electronics engineer. APEC 2027 Conference registration includes access to technical content, such as peer-reviewed Technical Program paper presentations, Industry Sessions discussing the latest advances in commercial developments, as well as half-day Professional Education Seminars presented by industry experts on a range of topics geared to both introductory and expert-level participants. In addition to the conference program, full registration includes admission to the sold-out APEC 2027 Exposition that brings together nearly 300 manufacturers. Special events – including the MicroMouse contest and the always-popular Wednesday evening Social Event – round out the interactive tradeshow environment. APEC focuses on the practical and applied aspects of the power electronics business. | 20.10.2026 11:00:00 | Oct | news_2026-11-01_6.jpg | \images\news_2026-11-01_6.jpg | https://apec-conf.org/attendees/registration/ | apec-conf.org |
| Sales Rep as well as Authorized Distributor added in the UK | Recom has increased its sales and distribution net... | 14020 | Industry News | Sales Rep as well as Authorized Distributor added in the UK | Recom has increased its sales and distribution network in the UK by adding BCD Atlantik as a sales representative and Ecopac as an authorized distributor in the United Kingdom. The partnership with BCD Atlantik combines RECOM’s DC/DC and AC/DC power supplies with BCD Atlantik’s engineering capabilities and customer-focused approach. This company supports engineers throughout the entire product development cycle by providing technical consulting, design-in support, and engineering services. For more than three decades, Ecopac Power, which is now an official RECOM distributor in the UK, has supported design engineers and industrial customers with the selection and integration of power supply solutions. The partnership provides a local source for the RECOM portfolio in the UK. | 20.10.2026 07:00:00 | Oct | news_2026-11-01_2.jpg | \images\news_2026-11-01_2.jpg | https://recom-power.com/en/company/newsroom/rec-n-bcd-atlantik-joins-recom%27s-uk-sales-representative-network-489.html?3 | recom-power.com |
| 4 kW Buck-Boost Converter Reference Design | Efficient Power Conversion (EPC) announced the use... | 14025 | Product Release | 4 kW Buck-Boost Converter Reference Design | Efficient Power Conversion (EPC) announced the use of its EPC2361 100 V eGaN FETs in a high-performance buck-boost converter reference design from Analog Devices (ADI). The design demonstrates how GaN technology can enable efficient, high-current power conversion for demanding industrial, telecom, battery charging, and other high-power applications. The EVAL-LT7930-AZ combines the LT7930 controller with EPC2361 GaN FETs in a dual-phase, interleaved buck-boost converter operating from 36 V to 65 V input and delivering 48 V output. The platform supports up to 4 kW of output power and achieves typical efficiencies of 98.5% at 36 V and 48 V input and 98.8 % at 65 V, demonstrating the high-efficiency power conversion enabled by EPC’s GaN technology. The EPC2361 is a 100 V, 133 A enhancement-mode GaN transistor featuring a typical 0.75 mΩ on-resistance and a 3 mm × 5 mm package. A key element of the reference design is the ability to optimize the switching behavior specifically for GaN. The power-stage controller provides gate drivers optimized for GaN FETs and programmable dead-time control. On the evaluation platform, the dead time is set to 10 ns based on the EPC2361 GaN FET parameters, helping minimize reverse-conduction losses while maintaining safe switching operation. | 20.10.2026 06:30:00 | Oct | news_2026-11-01_7.jpg | \images\news_2026-11-01_7.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3380/epc-gan-fets-enable-4-kw-high-efficiency-buck-boost-converter-reference-design | epc-co.com |
| Swiss-Japanese Power Joint Venture | ABB announced the creation of a joint venture with... | 14019 | Industry News | Swiss-Japanese Power Joint Venture | ABB announced the creation of a joint venture with Mitsubishi Electric’s carved-out low-voltage power distribution product business, forming a new company focused on low-voltage solutions for Asian markets. For a consideration of JPY 79 billion (~$495 million), ABB will acquire a controlling 51 percent stake in the newly carved out company as well as full ownership of the related sales operations outside of Japan of Mitsubishi Electric’s low-voltage power distribution products. The transaction, which provides an option for full ownership by ABB in the mid-term, is expected to close in the second half of 2027, subject to regulatory approvals and other customary closing conditions. The new company brings together ABB’s technology and global sales network with Mitsubishi Electric’s established market presence. Mitsubishi Electric’s power distribution business employs around 2,800 people, with dedicated manufacturing facilities in Fukuyama, Japan, and Hanoi, Vietnam. Its portfolio includes low-voltage circuit breakers, switches, motor starters, contactors and control devices, energy measurement and monitoring equipment, and uninterruptible power supply systems. | 20.10.2026 06:00:00 | Oct | news_2026-11-01_1.jpg | \images\news_2026-11-01_1.jpg | https://www.abb.com/global/en/news/139701/abb-joint-venture-with-mitsubishi-electric-to-expand-position-in-asia-pacific-markets | abb.com |
| Production of France’s First Solid-State Batteries launched | At its site in Bordeaux, TotalEnergies’ affiliate ... | 14037 | Industry News | Production of France’s First Solid-State Batteries launched | At its site in Bordeaux, TotalEnergies’ affiliate Saft inaugurates production lines for solid-state batteries, which means batteries those that use a solid electrolyte. Saft will be the first French manufacturer with the capacity to develop and produce solid-state batteries that use both sulfide and polymer electrolytes at room temperature, a technological combination with a wide range of applications. Solid-state batteries are seen as one of today’s most promising technologies. By replacing the traditional liquid electrolyte with a solid material, they offer increased safety in addition to energy density that is up to 50 % higher than that of classic lithium-ion batteries. They are produced using a dry electrode process, moreover, which is more environmentally responsible, cutting the CO<sub>2</sub> emissions from this stage of production by up to 40 %. The aim is to promote electrification in the aviation and space sectors, where gains in safety, performance and energy density are particularly valuable. In aviation, Saft has already passed a first milestone, with the delivery of semi-solid state cells for the evaluation of future electric and hybrid aircraft architectures. Solid-state batteries have been identified as a technology that will be key to the electrification of aviation and have also attracted significant interest from the space industry. | 19.10.2026 08:00:00 | Oct | news_2026-11-15_3.png | \images\news_2026-11-15_3.png | https://saft.com/en/media-resources/press-release/saft-launches-production-frances-first-solid-state-batteries | saft.com |
| Family of Heat Shock Chip Resistors | KOA Speer Electronics has developed a family of he... | 14029 | Product Release | Family of Heat Shock Chip Resistors | KOA Speer Electronics has developed a family of heat shock resistors capable of withstanding two to three times the number of thermal cycles compared to standard chip resistors. These resistors feature a metal glaze resistance film that features a thicker bottom electrode to suppress cracking and delamination caused by thermal shock. This enhanced solder joint reliability applies to both high-strength solders and SAC (Sn-Ag-Cu) solders. KOA’s family of heat shock resistors use a part number designation of -AT and include general purpose, high precision, high voltage, anti-surge and high temperature resistors. The new resistors have applications in the automotive and industrial markets as well as power supplies. KOA tested these heat shock resistors and standard resistors in 30 minute cycles from -55 °C to +155 °C for 3,000 cycles. | 16.10.2026 10:30:00 | Oct | news_2026-11-01_11.png | \images\news_2026-11-01_11.png | https://www.koaspeer.com/ | koaspeer.com |
| Single-Output AC/DC Power Supplies | Vox Power has expanded its EIRE family of single-o... | 14032 | Product Release | Single-Output AC/DC Power Supplies | Vox Power has expanded its EIRE family of single-output AC/DC power supplies with the introduction of the EIRE600, a 600 W power supply measuring 5 inches × 3 inches with a 1.1-inch profile. The unit delivers its full 600 W output with either forced-air or conduction cooling. Where fan-less operation is preferred, it can provide up to 450 W using natural convection at 115 V<sub>AC</sub>. For applications with short-duration higher power requirements, up to 750 W is available for three seconds. System airflow can be used where it is already available, while conduction cooling allows heat to be transferred directly into the equipment chassis or a cooling plate. Natural-convection operation is also available for applications where acoustic noise, maintenance or ingress protection are important considerations. With its efficiency of up to 96 %, the power supply is designed for both industrial and medical applications. It provides 2 MOPP isolation, BF-rated output and support for both Class I and Class II installations. The platform operates from a universal 85–264 V<sub>AC</sub> input and is designed for operation at altitudes up to 5,000 m and ambient temperatures up to +85 °C with appropriate derating. Four standard output voltages of 12 V, 24 V, 36 V and 48 V are available. A 5 V/2 A bias supply and 12 V auxiliary fan output are provided, together with remote sense, AC_OK and inhibit functions for system control and monitoring. With the main output inhibited, standby power consumption is approximately 200 mW. | 15.10.2026 13:30:00 | Oct | news_2026-11-01_14.jpg | \images\news_2026-11-01_14.jpg | https://www.vox-power.com/2026/10/14/eire600-power-series-600w-single-output-5-x-3-x-1-1-ac-dc/ | vox-power.com |
| SiC MOSFET Power Module with Integrated Half-Bridge Structure | The MD53HFL120L2S_B20 from StarPower Semiconductor... | 14030 | Product Release | SiC MOSFET Power Module with Integrated Half-Bridge Structure | The MD53HFL120L2S_B20 from StarPower Semiconductor is a SiC MOSFET power module designed for demanding high-voltage applications (1200 V class, 120 A class) in the industrial and automotive sectors. With its reverse voltage of 1200 V, an R<sub>DS(on)</sub> of 5.3 mΩ at 25 °C, a free-wheeling diode and the use of AlN-AMB technology, the module is suited for the development of DC/DC converters and auxiliary drives. The half-bridge topology, consisting of two SiC MOSFETs (dual N-channel) connected in series, can be used for inverter and converter stages. The devices can operate at temperatures of up to 150 °C. Typical applications are main and auxiliary drives in electric vehicles, as well as on-board chargers, central and string inverters for solar installations, UPS systems and SMPS, as well as DC servo systems and robot drives. | 15.10.2026 11:30:00 | Oct | news_2026-11-01_12.jpg | \images\news_2026-11-01_12.jpg | https://starpowereurope.com/products?category=sic-mosfet-module | starpowereurope.com |
| Supply Agreement for 200-Millimeter SiC Wafers | Infineon Technologies and Wolfspeed have signed a ... | 14022 | Industry News | Supply Agreement for 200-Millimeter SiC Wafers | Infineon Technologies and Wolfspeed have signed a multi-year supply agreement for 200-millimeter silicon carbide wafers, transitioning Infineon’s already existing Wolfspeed supply relationship from 150-millimeter to 200-millimeter substrate technology. The agreement directly supports Infineon’s conversion to 200-millimeter SiC manufacturing. The transition to 200-millimeter SiC wafers delivers large manufacturing economics compared to 150-millimeter production. Larger wafer diameter increases usable die area per wafer, reduces per-unit substrate cost, and improves overall manufacturing efficiency. Infineon operates a multi-source SiC substrate strategy to maintain supply chain flexibility and quality across its global manufacturing network, including its 200-millimeter SiC fab in Kulim, Malaysia. | 15.10.2026 09:00:00 | Oct | news_2026-11-01_4.png | \images\news_2026-11-01_4.png | https://www.infineon.com/press-release/2026/infpr202610-008 | infineon.com |
| Semiconductor Distribution Agreement for Power MOSFETs in Japan | iDEAL Semiconductor announced a distribution agree... | 14021 | Industry News | Semiconductor Distribution Agreement for Power MOSFETs in Japan | iDEAL Semiconductor announced a distribution agreement with the value-added technology distributor Marubun Corporation. Under the agreement, Marubun will distribute iDEAL’s expanding portfolio of high-performance silicon MOSFETs. The manufacturer’s MOSFETs address efficiency, thermal performance, and power density challenges in industrial automation and robotics, battery management systems, industrial power supplies, isolated DC/DC converters, data center power supplies, and other high-performance power conversion systems. | 15.10.2026 08:00:00 | Oct | news_2026-11-01_3.png | \images\news_2026-11-01_3.png | https://idealsemi.com/ideal-semiconductor-signs-distribution-agreement-with-marubun-to-expand-access-to-superq-power-mosfets-in-japan/ | idealsemi.com |
| "Eco-friendly" SMD Varistors | TDK has expanded its surface-mount multilayer vari... | 14050 | Product Release | "Eco-friendly" SMD Varistors | TDK has expanded its surface-mount multilayer varistor (MLV) product family with the standard X series (CT0402*X, CT0603*X, CT0805*X, CT1206*X, CT1210*X, CT1810*X, and CT2220*X) for industrial applications. These SMD MLVs not only protect electronics against overvoltages, maintaining high reliability and performance in a compact size, but also help customers reduce their CO<sub>2</sub> footprint by up to 30 percent. Based on a tailored ceramic composition, these components can be sintered at lower temperatures than standard MLVs, reducing energy usage. Additionally, the raw material itself has a smaller CO<sub>2</sub> footprint. The X series targets power supplies, factory automation, industrial IoT, and sensor interfaces where miniaturization and electrical robustness are required, including harsh environments. This follows the release and ramp-up of the X1 series for automotive applications based on the same technology platform. Spanning case sizes from EIA0402 to EIA2220, the X series offers RMS voltage ratings from 3.5 to 40 V and varistor voltages from 8 to 350 V. They provide clamping voltages from 24 to 450 V and withstand electrostatic discharge (ESD) up to 15 kV air discharge according to IEC 61000-4-2. For surge protection, peak current handling ranges from 1 A in the smallest footprint up to 800 A. Customer-specific adjustments are possible. These varistors respond to voltage transients within 0.5 ns and offer capacitance values as low as 6 pF, preserving signal integrity in high-speed data lines. The components operate reliably in a temperature range of -55 to +125 °C. | 14.10.2026 13:30:00 | Oct | news_2026-11-15_16.png | \images\news_2026-11-15_16.png | https://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/tdk-extends-eco-friendly-smd-varistors-with-x-series-for-standard-applications/3709532 | tdk-electronics.tdk.com |
| Expanding Distribution Capabilities for Shipping worldwide | DigiKey will invest $100 million over the next 18 ... | 14023 | Industry News | Expanding Distribution Capabilities for Shipping worldwide | DigiKey will invest $100 million over the next 18 months to expand both its global product distribution center in Thief River Falls, Minnesota/USA, and its order management system. The investment funds the next phases of DigiKey’s product distribution center (PDC) expansion, adding high-volume picking capacity and advanced automated packing operations. The first new automated packing system is already on site and will be in use this year, with additional multi-line packing automation phased in as part of the investment program. The announcement follows a year of extraordinary growth for the company. DigiKey is on pace to grow more than 50 percent in 2026, and projects continued double-digit growth in the year ahead. The expansion continues the design philosophy behind the company’s purpose-built product distribution center: building in capacity ahead of demand. DigiKey’s 2.2 million-square-foot product distribution center expansion project opened in August 2022 and was designed for scalable growth, with many open spaces and much of the fourth floor left empty for future expansion. The additional picking bays, order retrieval automation and expanded packing operations will process a growing share of order volume across multiple product form factors with higher speed and efficiency. Currently, the company has more than 1.9 million products in stock and ready to ship the same day from the product distribution center. | 14.10.2026 10:00:00 | Oct | news_2026-11-01_5.jpg | \images\news_2026-11-01_5.jpg | https://www.digikey.com/en/news/press-releases/2026/october/digikey-commits-100-million-investment-over-next-18-months-to-expand-global-distribution-operations | digikey.com |
| Radiation-Tolerant GaN Point-of-Load Converter | Microchip Technology announces the POL-05-20S-T, a... | 14027 | Product Release | Radiation-Tolerant GaN Point-of-Load Converter | Microchip Technology announces the POL-05-20S-T, a radiation-tolerant, Point-of-Load (POL) converter, designed to address the power requirements of space processing applications. This device uses GaN power devices to deliver up to 20 A of output current. The converter is supplied in a 25 g surface-mount package measuring 1.51" × 1.51" × 0.45". By delivering 20 A in this footprint, the device helps engineers manage the size, power and energy constraints that accompany increasingly capable onboard processing systems. The POL-05-20S-T is designed for high-current, fast-transient applications such as for the core voltage rails of FPGAs, microcontrollers, ASICs and other processing-intensive digital loads. It combines a synchronous buck topology with current-mode control. With an input range of 4.75 V to 13.2 V and adjustable 0.7 V to 5 V output, the device fits to multiple power rails and system architectures. The POL-05-20S-T has electrical parameters specified before and after irradiation up to a Total Ionizing Dose (TID) of 50 krad. The device is characterized for Single Event Effects (SEE) up to a Linear Energy Transfer (LET) of 43 MeV·cm²/mg. It operates from -55 °C to +100 °C at full load. It incorporates remote sensing, undervoltage and overvoltage protection, soft start, an enable pin and power-good indication pin. | 14.10.2026 08:30:00 | Oct | news_2026-11-01_9.jpg | \images\news_2026-11-01_9.jpg | https://www.microchip.com/en-us/about/news-releases/products/microchip-expands-space-power-portfolio-with-new-radiation-tolerant-gan-pol-converter | microchip.com |
| Single-Whip AC Input Option to 33 kW ORv3 HPR Power Shelf | Advanced Energy Industries launched a single-whip ... | 14051 | Product Release | Single-Whip AC Input Option to 33 kW ORv3 HPR Power Shelf | Advanced Energy Industries launched a single-whip option for its 33 kW ORv3 High-Power Rack (HPR) power shelf. The option provides one AC power connection per shelf, with separate left- and right-side input configurations to accommodate different data center rack layouts. The shelf accommodates six 5.5 kW power supply modules in one Open Rack Unit (1OU) form factor. A fully populated shelf delivers 33 kW without redundancy or 27.5 kW with N+1 power-module redundancy. The modules are hot-swappable. Multiple shelves can operate in parallel to power racks requiring 100 kW or more, supporting AI and high-performance computing applications. Customers can select from multiple monitoring and control options, including an Ethernet-based controller compatible with DMTF Redfish®. | 13.10.2026 14:30:00 | Oct | news_2026-11-15_17.png | \images\news_2026-11-15_17.png | https://www.advancedenergy.com/en-us/about/news/press/advanced-energy-adds-single-whip-ac-input-option-to-33-kw-orv3-hpr-power-shelf/ | advancedenergy.com |
| Collaboration on Solid State Circuit Breakers for 800 VDC AI Data Centers | Power Integrations and Ideal Power announced a col... | 14035 | Industry News | Collaboration on Solid State Circuit Breakers for 800 VDC AI Data Centers | Power Integrations and Ideal Power announced a collaboration to deliver a solid-state circuit breaker (SSCB) solution providing fast, efficient, always-on protection that scales with the 800 VDC transition in AI data centers. The companies will collaborate on a architecture combining Power Integrations’ 1700 V InnoMux-2 power conversion ICs with Ideal Power’s B-TRAN® switches to deliver a self-powered, intelligent, fast SSCB. They have also demonstrated a working prototype and are working on a reference design. Rising voltages and rack power levels in AI data centers create a need for innovative approaches to circuit protection. Mechanical circuit breakers are too slow to protect sensitive rack equipment, while existing electronic breakers introduce losses, reducing system efficiency. Further, electronic breakers must be powered from the 800 V bus. In the next generation intelligent SSCB architecture, the InnoMux-2 IC converts 800 V into isolated power for gate-drive, control electronics, sensing, and auxiliary circuitry. Ideal Power’s B-TRAN switch uses that intelligence to protect the 800 V power path to the AI computing load. The InnoMux-2 IC features 1700 V PowiGaN technology, which can operate from an 800 VDC bus with significant margin. The IC provides multiple independently regulated outputs instead of a conventional architecture with one isolated PSU followed by multiple DC/DC converters. The result is an efficient, self-powered protection solution that eliminates the need for an external auxiliary supply while enabling ultra-fast fault isolation. | 12.10.2026 06:00:00 | Oct | news_2026-11-15_1.jpg | \images\news_2026-11-15_1.jpg | https://investors.power.com/news/news-details/2026/Power-Integrations-and-Ideal-Power-Collaborate-on-Efficient-Always-On-Solid-State-Circuit-Breakers-for-800-VDC-AI-Data-Centers/default.aspx | power.com |
| 27 kW three-phase PSU solution for Next-Generation AI Server Power Architectures | To address the shift toward 800 VDC or ±400... | 14010 | Product Release | 27 kW three-phase PSU solution for Next-Generation AI Server Power Architectures | To address the shift toward 800 VDC or ±400 VDC power supply architectures, Infineon has launched a 27 kW three-phase power supply unit (PSU) solution for server ODMs and OEMs. The reference design meets the requirements of the OCP Open Rack V3 (ORV3) specification and AI server rack architectures. The solution helps developers shorten time-to-market while improving rack power density, efficiency, and thermal performance. The design combines Infineon components including 650 V CoolSiC™ and CoolMOS™ MOSFETs, EiceDRIVER™ gate drivers, XENSIV™ current sensors, and PSOC™ microcontrollers. It achieves a peak efficiency of more than 98 % at an input voltage of 480 VAC and 50 % load. The reference design uses a five-level ANPC PFC topology and a three-level LLC converter, reaching a power density of 116 W/in<sup>3</sup>, compared with the ORV3 minimum requirement of 94 W/in<sup>3</sup>. An integrated energy buffer provides a hold-up time of 20 ms during short power grid disturbances. It also helps smooth the line voltage during rapid GPU load changes, eliminating the need for a separate capacitor bank unit (CBU). An integrated planar magnetic structure enables a modular, and scalable high-frequency transformer design. The reference design supports a three-phase input voltage range of 311 to 528 VAC and is therefore suitable for a range of global grid standards. It achieves low input-current total harmonic distortion (iTHD) and a power factor above 0.99 across most of the load operating range. The design supports operation at ambient temperatures from -5 °C to +45 °C. | 08.10.2026 07:30:00 | Oct | news_2026-10-15_10.jpg | \images\news_2026-10-15_10.jpg | https://www.infineon.com/technology-news/2026/inftn202610-005 | infineon.com |
| 3 kW AC/DC Power Supply meets Medical Requirements | With the RACM3000-M series, RECOM provides high-po... | 14016 | Product Release | 3 kW AC/DC Power Supply meets Medical Requirements | With the RACM3000-M series, RECOM provides high-power AC/DC power supplies for medical, industrial, and energy applications. Communication functions, support for parallel operation, and safety approvals enable straightforward integration into a wide range of systems. The RACM3000-M delivers up to 3000 W of output power and operates over an input voltage range of 90 – 264 V<sub>AC</sub>, with full power available from 180 – 264 V<sub>AC</sub>. In addition, variants of the RDC3000-M series are planned for 400 – 800 V<sub>DC</sub> input, extending the range of possible applications in modern energy and infrastructure systems. The products feature an integrated CAN bus interface for monitoring and control, a 5 V / 2 A standby output, Remote On/Off, Remote Sense, and a DC-OK signal. For applications with increasing power requirements, active load sharing and optional integrated OR-ing FETs support safe parallel operation of multiple power supplies. A temperature-controlled intelligent fan provides reliable cooling. The series meets the requirements of UL/IEC 60601 for medical applications, UL/IEC 62368 for industrial and ICT equipment, and IEC 60335-2-29 for charging applications. With 2MOPP isolation, it is suitable for both medical devices and industrial systems with stringent safety and reliability requirements. Typical applications for the RACM3000-M series include battery charging systems, cobots, automated medical analysis and diagnostic systems, machine control, communication infrastructure, energy storage, and data centers. | 07.10.2026 13:30:00 | Oct | news_2026-10-15_16.jpg | \images\news_2026-10-15_16.jpg | https://recom-power.com/en/knowledgebase/newsroom/rec-n-high-power-racm3000-m-series-with-up-to-3000w-output-power-484.html?4 | recom-power.com |
| 60 V Dual Power MOSFETs for Automotive | Taiwan Semiconductor introduces a family of automo... | 14015 | Product Release | 60 V Dual Power MOSFETs for Automotive | Taiwan Semiconductor introduces a family of automotive-grade power MOSFETs to its existing TQM Series. Available in a PDFN56UD, these twelve 60 V dual n-channel devices support drop-in pin compatibility with other commonly used package types. The devices’ 5 mm x 6 mm packaging with heat-spreader contacts, a drain current (I<sub>D</sub>) of 81 or, respectively, 100 A, and an R<sub>DS(ON)</sub> between 2.6 and 5.2 mΩ provide adequate thermal management and power density. Additionally, their wettable flank connections are suited for automated placement. Typical applications include H-bridge and half-bridge rectifiers, motor/actuator controls and solenoid drives. | 07.10.2026 12:30:00 | Oct | news_2026-10-15_15.png | \images\news_2026-10-15_15.png | https://www.taiwansemi.com/en/perfet-60v-power-mosfets-for-automotive/ | taiwansemi.com |
| $1.5 Billion Loan Commitment for SiC Manufacturer | Wolfspeed announced it has received a conditional ... | 14007 | Industry News | $1.5 Billion Loan Commitment for SiC Manufacturer | Wolfspeed announced it has received a conditional loan commitment letter from the U.S. Department of War (“DoW”), through its Office of Strategic Capital (“OSC”), for up to $1.5 billion of long-term financing to support the domestic development and production of silicon carbide materials and wide bandgap power devices, with an additional focus on U.S. national security applications. Beyond supporting the domestic wide bandgap supply chain, which is critical to the U.S. defense and economic industrial base, the $1.5 billion commitment will support key DoW initiatives. Specifically, Wolfspeed plans to use the financing to, without limitation, upgrade its gallium nitride (GaN) epitaxy capabilities for next generation communications infrastructure and electronic warfare systems and develop radiation-hardening capabilities for its current SiC and future GaN products. Wolfspeed believes that SiC and related semiconductor technologies are critical to next generation power and radio-frequency applications across defense, aerospace, AI, critical infrastructure and other strategic commercial markets. The execution of the definitive agreements and consummation of the potential financing are subject to substantial due diligence and numerous conditions, the negotiation and finalization of agreements, significant closing conditions, governmental authorizations and approvals, appropriations and required third-party consents. | 07.10.2026 12:00:00 | Oct | news_2026-10-15_7.jpg | \images\news_2026-10-15_7.jpg | https://www.wolfspeed.com/company/news-events/news/wolfspeed-announces-conditional-30-year-loan-commitment-from-us-department-of-war-to-advance-domestic-wide-bandgap-supply-chain/ | wolfspeed.com |
| Cooperation on advanced Packaging Industrial Adoption | The Global Electronics Association has signed a Me... | 14004 | Industry News | Cooperation on advanced Packaging Industrial Adoption | The Global Electronics Association has signed a Memorandum of Understanding (MoU) with the Fraunhofer Group for Microelectronics to help accelerate the path from advanced packaging innovation to industry-scale manufacturing. The collaboration focuses on the APECS pilot line, the European pilot line for advanced packaging and heterogeneous integration for electronics components and systems under the EU Chips Act. APECS is coordinated by the Fraunhofer-Gesellschaft and implemented by Research Fab Microelectronics Germany (FMD), a research collaboration of 13 Fraunhofer institutes and the Leibniz institutes FBH and IHP. The MoU draws on APECS pilot line capabilities and the Global Electronics Association’s expertise in standards, industry engagement and knowledge transfer to support the transition of new technologies toward industrial implementation. APECS provides access to capabilities for advanced packaging and heterogeneous integration, including chiplet-based modules and 2.5D/3D integration. The pilot line also emphasizes System-Technology Co-Optimization (STCO) – an approach that helps align product design, materials, assembly integration choices and manufacturing processes earlier in development. At a kick-off meeting in September, representatives from the Global Electronic Association and the Fraunhofer Group for Microelectronics launched the collaboration and discussed its priorities with a focus on supporting industry adoption of advanced packaging and heterogeneous integration technologies. The goal is to turn validated pilot line capabilities into industry-ready approaches that can be adopted at scale. | 07.10.2026 09:00:00 | Oct | news_2026-10-15_4.png | \images\news_2026-10-15_4.png | https://www.electronics.org/technology-solutions | electronics.org |
| 3300 V SiC MOSFET Module for Industrial Equipment | Toshiba Electronics Europe launched IX800FXF2YMS4,... | 14014 | Product Release | 3300 V SiC MOSFET Module for Industrial Equipment | Toshiba Electronics Europe launched IX800FXF2YMS4, a dual SiC MOSFET modulewith high surge-current capability to support reliable operation in industrial equipment, including inverters and converters for railway vehicles and power conversion systems such as solid-state transformers, uninterruptible power supplies (UPS) and energy storage systems, and industrial motor control equipment. The IX800FXF2YMS4 uses Toshiba’s third-generation SiC MOSFET devices and has a drain-source voltage (V<sub>DSS</sub>) rating of 3300 V with a drain current (DC) rating of 800 A. The IX800FXF2YMS4 has an I<sup>2</sup>t rating of 30 0kA<sup>2</sup>s for its diode at initial channel temperature of 175 °C, V<sub>GS</sub> = -6 V, a single half-sinewave 10 ms pulse, and F.R. = 1 %. This indicates the diode’s surge current capability under abnormal operating conditions. Typical drain-source on-voltage (sense) (V<sub>DS(on)sense</sub>) is 1.4 V at I<sub>D</sub> = 800 A, V<sub>GS</sub> = +20 V and T<sub>ch</sub> = 25 °C. Typical turn-on and turn-off switching losses (E<sub>on</sub> and E<sub>off</sub>) are 185 mJ and 175 mJ, respectively, at V<sub>DD</sub> = 1800 V, I<sub>D</sub> = 800 A and T<sub>ch</sub> = 175 °C. The device is housed in the iXPLV™ (Intelligent Flexible Package Low Voltage) package, which uses silver sintering die attach to improve heat resistance and reliability, supporting a channel temperature rating of 175 °C. | 06.10.2026 11:30:00 | Oct | news_2026-10-15_14.jpg | \images\news_2026-10-15_14.jpg | https://toshiba.semicon-storage.com/eu/company/news/2026/10/sic-power-devices-20260924-1.html | toshiba.semicon-storage.com |
| TVS Diode Arrays for ESD Protection | Littelfuse announced AQ4315-01ETG and SP4315-01WTG... | 14012 | Product Release | TVS Diode Arrays for ESD Protection | Littelfuse announced AQ4315-01ETG and SP4315-01WTG, two bidirectional TVS Diode Arrays (SPA® Diodes) that combine low clamping voltage with low capacitance to protect today’s fastest automotive and consumer data interfaces from electrostatic discharge (ESD) without compromising signal integrity. High-speed interfaces such as automotive ADAS, DisplayPort, and USB4 are increasingly vulnerable to ESD damage as data-line voltages drop below 1 V to save energy and reduce EMI. Conventional TVS diodes force a tradeoff between low clamping voltage and low capacitance, and many competing devices advertise a lower breakdown voltage while still clamping at levels that leave protected chips exposed to damage. The AQ4315-01ETG and SP4315-01WTG close that gap, holding clamping voltage to a typical 4.5 V to 6.5 V while suppressing ESD transients ranging from 8 kV to 20 kV down to well under 10 V at the protected device, an 800- to 2,000-times reduction in the voltage and current reaching the IC and keeping it safely within its Safe Operating Area (SOA). The capacitances of the devices are 0.25 pF (AQ4315-01ETG) or 0.17 pF (SP4315-01WTG) to preserve high-speed signal integrity. AQ4315-01ETG provides automotive-grade reliability is AEC-Q101 qualified and PPAP capable, rated -40 °C to +150 °C. | 06.10.2026 09:30:00 | Oct | news_2026-10-15_12.jpg | \images\news_2026-10-15_12.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-unveils-ultra-low-capacitance-tvs-diode-arrays-with-industrys-lowest-clamping-voltage | littelfuse.com |
| Collaboration on 800 V Reference Design for Next-Generation AI Data Centers | The industry is shifting toward 800V DC rack power... | 14006 | Industry News | Collaboration on 800 V Reference Design for Next-Generation AI Data Centers | The industry is shifting toward 800V DC rack power architectures to improve distribution efficiency, increase power density and support next-generation server designs. To help accelerate this transition, Navitas and Microchip have collaborated on an 800 V DC-to-6V DC reference design for AI data center rack power applications. The platform combines Microchip’s digital power control and security technologies with Navitas’ GaNFast™ gallium nitride (GaN) power devices to give developers a practical path to implement high-efficiency power conversion aligned with the Open Compute Project (OCP) 800 V DC standard. Complete with reference hardware, software and design documentation, the solution helps reduce design risk, shorten development cycles and accelerate deployment of next-generation AI infrastructure. At the core of the reference platform are Microchip's dsPIC33AK Digital Signal Controllers (DSCs), TA100 CryptoAuthentication™ device, and Navitas’ GaNFast FETs. The dsPIC33AK is designed to provide high-resolution control, high-speed analog and security with support for post-quantum cryptography. Powered by a 200 MHz 32-bit core with a double-precision floating-point unit (FPU), the dsPIC33AK256MPS306 family combines 78 ps high-resolution Pulse Width Modulators (PWMs) and multiple 12-bit Analog-to-Digital Converters (ADCs) operating at up to 40 MSPS for high frequency, high-efficiency DC/DC power conversion. This PDB is powered by 16 × NV6034, 650 V, 17 mΩ GaNFast FETs in a stacked half-bridge topology on the primary side. The DFN8×8 dual-side-cooled package reduces thermal resistance. The PDB targets delivering up to 96 % peak efficiency at full load with 1 MHz switching frequency, enabling a power density of 2,100 W/in<sup>3</sup>. | 05.10.2026 11:00:00 | Oct | news_2026-10-15_6.jpg | \images\news_2026-10-15_6.jpg | https://www.navitassemi.com/en/press-releases/navitas-and-microchip-collaborate-to-deliver-800v-reference-design-for-next-generation-ai-data-centers | navitassemi.com |
| Investment in Scottish Battery Storage Project | Copenhagen Infrastructure Partners (CIP) has taken... | 14003 | Industry News | Investment in Scottish Battery Storage Project | Copenhagen Infrastructure Partners (CIP) has taken Financial Investment Decision (FID) for Kilmarnock South, a 350 MW / 1,400 MWh lithium-ion battery energy storage system (BESS) located in south Ayrshire, southern Scotland. Construction is now underway with commercial operations expected in the first quarter of 2028. The battery will store surplus Scottish wind power that would otherwise go unused and release it to the grid when the network has capacity. Kilmarnock South is CIP's fourth investment in transmission-connected BESS projects in Scotland. Upon full commissioning, CIP’s four Scottish BESS projects will collectively offer a total energy storage capacity of 4.4 GWh, the equivalent of almost a third of Great Britain’s operational battery energy storage today and about the electricity demand of over 5.5 million households, across a two-hour period. | 02.10.2026 08:00:00 | Oct | news_2026-10-15_3.jpg | \images\news_2026-10-15_3.jpg | https://www.cip.com/copenhagen-infrastructure-partners-p-s/r/copenhagen-infrastructure-partners-announces-eur-270-million-investment-in-new-scottish-battery-stor,c4388796?nfiid=3297 | cip.com |
| 650 V GaN in Dual-Side Cooled Package for Megawatt-Scale AI Data Centers | Renesas launched a 650V GaN device with dual-side ... | 14013 | Product Release | 650 V GaN in Dual-Side Cooled Package for Megawatt-Scale AI Data Centers | Renesas launched a 650V GaN device with dual-side cooling for high-density power conversion in 800 V high-voltage DC (HVDC) AI data center architectures. The TP65H020G4PLSGBD D-Mode device delivers 20 mΩ on-resistance in a dual-side-cooled (DSC) PQFN package. Built on its Gen IV Plus GaN architecture, the device is purpose-built for the megawatt-scale demands driving next-generation AI data centers supporting up to 700 V operation. It targets the 800 V DC/DC intermediate bus converter (IBC) stage that steps down to 48 V, 12 V or 6 V, along with the battery backup (BBU) and capacitor bank (CBU) stages of the sidecar power rack. As rack power climbs from roughly 120 kW toward megawatt scale, space and heat have become critical factors in sustaining the power level. Unlike conventional top-side-cooled packages, this device dissipates heat from both top and bottom, lowering top-side thermal impedance by 10 %. Its 8 × 8 mm<sup>2</sup> PQFN footprint is also 57 % smaller than the existing 10 × 15 mm<sup>2</sup> TOLT package. | 30.09.2026 10:30:00 | Sep | news_2026-10-15_13.jpg | \images\news_2026-10-15_13.jpg | https://www.renesas.com/en/about/newsroom/renesas-unveils-industrys-first-650v-gan-dual-side-cooled-8x8mm-package-megawatt-scale-ai-data | renesas.com |
| Aluminum-Housed Wirewound Resistors for High-Power Industrial Equipment | Bourns announced the UALH Series Aluminum Housed H... | 14018 | Product Release | Aluminum-Housed Wirewound Resistors for High-Power Industrial Equipment | Bourns announced the UALH Series Aluminum Housed High Power Wirewound Resistors industrial equipment operating under demanding electrical and thermal conditions. The fixed resistors provide a 100 W power rating when mounted to a heatsink and a 30 W power rating without a heatsink, with a resistance range of 0.5 Ω to 22 kΩ with ±5 % tolerance and a temperature coefficient of resistance of ±350 ppm/°C. Industrial motor controls, power supplies and high-power machinery can subject resistive components to elevated temperatures and electrical stress. These conditions require designers to account for power dissipation, working voltage and available mounting space when selecting a fixed resistor. The UALH Series combines wirewound construction protected by a silicone molding compound with an aluminum housing that transfers heat from the resistor when mounted to a heatsink. Its thin, lightweight body operates across a temperature range of -55 °C to +275 °C. The maximum working voltage is 1483 V, while the dielectric withstanding voltage is 4500 V. Target Applications are industrial motor controls, industrial power supplies and high-power machinery. | 29.09.2026 15:30:00 | Sep | news_2026-10-15_18.jpg | \images\news_2026-10-15_18.jpg | https://www.bourns.com/news/press-releases/pr/2026/09/29/bourns-introduces-ualh-series-aluminum-housed-wirewound-resistors-for-high-power-industrial-equipment | bourns.com |
| Silicon Carbide Technology for Solid-State Transformers in 800 VDC AI Data Center Power Architectures | Infineon Technologies will deliver silicon carbide... | 14005 | Industry News | Silicon Carbide Technology for Solid-State Transformers in 800 VDC AI Data Center Power Architectures | Infineon Technologies will deliver silicon carbide (SiC) power devices to Eaton, an intelligent power management company, for use in its medium-voltage solid-state transformer (MVSST) 2.0 platform designed for deployment across APAC. It targets 800 VDC data center power distribution architectures. Designed for high-density computing infrastructures and emerging 800 VDC AI data center power distribution architectures, Eaton’s MVSST 2.0 platform reduces conversion stages compared with conventional architectures, improving efficiency, power density and deployment flexibility. It is one of the first medium-voltage solid-state transformer platforms. Looking ahead, Eaton and Infineon are exploring next-generation SST platforms based on 2.3 kV and 3.3 kV SiC power modules to support higher system voltages, greater efficiency and enhanced reliability for future AI data centers, grid modernization and renewable energy applications. | 29.09.2026 10:00:00 | Sep | news_2026-10-15_5.png | \images\news_2026-10-15_5.png | https://www.infineon.com/press-release/2026/infpr202609-146 | infineon.com |
| Climbing up the Ladder of Responsibilities | TTI promoted Marc Winfield to President of TTI IP&... | 14002 | People | Climbing up the Ladder of Responsibilities | TTI promoted Marc Winfield to President of TTI IP&E – Europe. Marc Winfield succeeded Glyn Dennehy and assumes responsibility for TTI’s European business, with a focus on continued growth and strengthening relationships with its customers and strategic supplier partners. He has been with TTI for 25 years and has held senior positions across its European commercial organisation, including Director of European Strategic Accounts and Regional Vice President roles covering Northern and Southern Europe. For more than eight years, he has overseen the European Sales organisation and was appointed Senior Vice President Sales in 2023. In his role as President of TTI IP&E – Europe, Marc Winfield reports directly to John Drabik, President of TTI IP&E – Global. Glyn Dennehy, who has been President of TTI’s European business since 2015, is moving into the role of Executive Advisor to Mike Morton, Chief Executive Officer of TTI, and John Drabik, President of TTI IP&E – Global. He will remain actively involved with the business throughout 2027, supporting the management transition and selected strategic initiatives. | 28.09.2026 07:00:00 | Sep | news_2026-10-15_2.jpg | \images\news_2026-10-15_2.jpg | https://www.ttieurope.com/content/ttieurope/en/about-tti/news-center/corporate-news/press-releases/2026/september/pr-09282026-marc-winfield-promoted-president-tti-europe.html | ttieurope.com |
| Infrastructure-compatible Reference Designs for Next-generation AI Data Centers | Mitsubishi Electric Corporation’s U.S. subsidiary ... | 14011 | Product Release | Infrastructure-compatible Reference Designs for Next-generation AI Data Centers | Mitsubishi Electric Corporation’s U.S. subsidiary Mitsubishi Electric Power Products released Chip-to-Grid DSX Reference Designs to support the adoption of NVIDIA’s Vera Rubin NVL72 and future next-generation NVIDIA AI infrastructure in U.S. data centers. Going forward, Mitsubishi Electric will use the reference designs to develop solutions for next-generation AI data centers. The company’s Chip-to-Grid DSX Reference Designs encompass and coordinate systems from grid connection to chip power supply, and direct-rack to facility-level cooling. This solution integrates Mitsubishi Electric’s power transmission and distribution equipment with next-generation power supply that incorporates cutting-edge technologies as well as cooling systems. The designs also offer reliable scalability to support future gigawatt-class data centers. The designs support both conventional 415/480 VAC and 800 VDC power distribution within the data center. Furthermore, by combining with a dual-loop cooling system suitable for high-density AI loads, the solution maximizes power efficiency. | 24.09.2026 08:30:00 | Sep | news_2026-10-15_11.jpg | \images\news_2026-10-15_11.jpg | https://www.mitsubishielectric.com/en/pr/2026/0924_pu/ | mitsubishielectric.com |
| Ultra-Ruggedized 160 W AC/DC Power Supply for Extreme Environments | Advanced Energy Industries launches the ruggedized... | 14026 | Product Release | Ultra-Ruggedized 160 W AC/DC Power Supply for Extreme Environments | Advanced Energy Industries launches the ruggedized DF150 160 W AC/DC power supply. This is the first offering in the company’s Defiant Future (DF) series of robust, high-reliability standard power supplies for extreme-environment applications across the defense, industrial, telecommunications, transportation and energy sectors. Backed by rigorous validation testing, the DF150 power supply features a broad spectrum of MIL-STD certifications, combining proven performance with the shorter lead times of a standard power supply. It is certified to MIL-STD 810H, withstanding harsh conditions including shock, vibration, altitude variations and thermal extremes. DF150 also provides enhanced electromagnetic compatibility (EMC) performance with certification to MIL-STD 461G. The unit delivers a nominal 27 VDC at 6 A (160 W) with no performance degradation across its extended operating temperature range of -46 °C to +60 °C. With its IP67 rating, DF150 is fully submersible and exceeds MIL-STD ingress protection requirements for dust and liquids. The DF150 delivers up to 91 % efficiency at full load. It operates with no minimum load and low leakage (275 μA at 230 VAC). Its MIL-STD-461G certification includes RE102, CE102, CS101, CS114, CS115, CS116, CS118 and RS103. The DF150 is available with conduction cooling via a base plate or convection cooling with a mounted heatsink. | 24.09.2026 07:30:00 | Sep | news_2026-11-01_8.jpg | \images\news_2026-11-01_8.jpg | https://www.advancedenergy.com/en-us/about/news/press/advanced-energy-launches-defiant-family/ | advancedenergy.com |
| High-Current Common-Mode Chokes for Automotive DC Power Applications | Sumida Corporation has introduced the CNFC6D33 and... | 14017 | Product Release | High-Current Common-Mode Chokes for Automotive DC Power Applications | Sumida Corporation has introduced the CNFC6D33 and CNFC11D57, a series of DC common-mode chokes designed to suppress electromagnetic interference (EMI) in automotive and other demanding electronic applications. The devices are designed for DC power-line applications in automotive, industrial, and consumer electronics. The CNFC6D33 measures 7.2 × 6.2 × 3.5 mm<sup>3</sup> and supports rated currents up to 4 A, while providing common-mode impedance of up to 2,500 Ω typical at 100 MHz, depending on the version. DCR is as low as 15 mΩ maximum. The larger CNFC11D57 supports rated currents up to 16 A yet measures only 12.3 × 11.3 × 6.0 mm<sup>3</sup>. Three impedance configurations provide flexibility for different EMI-filtering requirements, with common-mode impedance ranging from 240 Ω to 1,000 Ω minimum at 100 MHz. DCR is 3 mΩ maximum. Both devices are designed for operation from -40 °C to +150 °C, including self-heating, supporting applications exposed to demanding electrical and thermal conditions. Potential applications include automotive HVAC systems, traction inverters, onboard chargers, automotive powertrain systems, DC power supplies, industrial and consumer electronics and other DC power systems requiring EMI suppression. The CNFC6D33 and the CNFC11D57 have provisional AEC-Q200 compliance. | 23.09.2026 14:30:00 | Sep | news_2026-10-15_17.jpg | \images\news_2026-10-15_17.jpg | https://products.sumida.com/ProductsInfo/ProductGuide/EMC/EMC.php?productid=102 | sumida.com |
| Power Solutions to support Japan’s accelerating AI-driven Data Centre Growth | Technology group Wärtsilä and Tokyo Gas Engineerin... | 13990 | Industry News | Power Solutions to support Japan’s accelerating AI-driven Data Centre Growth | Technology group Wärtsilä and Tokyo Gas Engineering Solutions Co (TGES) have signed a Memorandum of Understanding (MoU) to jointly evaluate power supply solutions for data centres in Japan. The Memorandum of Understanding between Wärtsilä and TGES aims to establish a framework for jointly evaluating gas- or dual-fuel engine-based power generation solutions for selected data centre opportunities currently under development by TGES in Japan. Under the MoU, the two companies will cooperate in developing initial technical concepts and establishing performance parameters and in assessing the feasibility of selected projects. Wärtsilä is a provider of on-site power to data centre projects. | 17.09.2026 12:00:00 | Sep | news_2026-10-01_7.png | \images\news_2026-10-01_7.png | https://www.wartsila.com/media/news/17-09-2026-wartsila-and-tges-to-evaluate-power-solutions-to-support-japan-s-accelerating-ai-driven-data-centre-growth-3791059 | wartsila.com |
| Strategic Partnership across Semiconductor Manufacturing, Technology and Innovation | Nexperia and Tata Electronics have started a strat... | 13989 | Industry News | Strategic Partnership across Semiconductor Manufacturing, Technology and Innovation | Nexperia and Tata Electronics have started a strategic partnership spanning semiconductor wafer manufacturing, assembly and test, technology collaboration, and innovation. The partnership establishes a framework for long-term cooperation across multiple stages of the semiconductor value chain and supports the growth ambitions of both companies. The partnership is structured around three areas: Front-end wafer fabrication, back-end assembly and test as well as technology and ecosystem development. As part of the front-end manufacturing collaboration, Nexperia and Tata Electronics are laying the groundwork for the production of Nexperia's MOSFET portfolio at Tata Electronics' upcoming 300mm semiconductor fab in Dholera, Gujarat. In parallel, the partnership also includes collaboration on semiconductor assembly and test of Nexperia’s discrete semiconductor products at Tata Electronics’ packaging facility in Jagiroad, Assam. The alliance reflects the companies’ shared ambition to build a long-term manufacturing partnership that enhances manufacturing flexibility, strengthens supply chain resilience, and establishes scalable production pathways to support Nexperia’s future growth. Tata Electronics is building India’s first commercial semiconductor fab in Dholera, Gujarat, and the first indigenous semiconductor assembly and test facility in Jagiroad, Assam, with a combined investment of USD 14 billion, to serve global customers across critical sectors. | 17.09.2026 11:00:00 | Sep | news_2026-10-01_6.png | \images\news_2026-10-01_6.png | https://www.nexperia.com/about/news-events/press-releases/Nexperia-and-Tata-Electronics-announce-strategic-partnership-across-semiconductor-manufacturing-technology-and-innovation | nexperia.com |
| Dual Channel Gate Driver | Infineon Technologies introduces the EiceDRIVER&tr... | 13994 | Product Release | Dual Channel Gate Driver | Infineon Technologies introduces the EiceDRIVER™ 2EDL6014AC-G2D, a 120 V junction-isolated dual channel floating output gate driver engineered for high-density silicon power designs in AI datacenter applications. Housed in a WQFN-12 package measuring 2.2 mm x 2.2 mm, the device addresses the growing demand for power conversion solutions that deliver higher server rack density without sacrificing reliability or thermal performance. The 2EDL6014AC-G2D supports dual high-side, dual low-side, and half-bridge configurations, making it suitable across the switched-capacitor and multilevel topologies increasingly adopted in next-generation AI server power architectures. The 2EDL6014AC-G2D provides two completely independent floating output gate drivers, each capable of driving a high-side MOSFET operating at up to 120 V. Full 4 A source and 6 A sink current driving capability takes care of the switching performance under demanding load conditions. Separate INA and INB input pins enable independent control of both channels, with integrated deglitch filtering for improved noise immunity in high-density PCB environments. The input stage is 3.3 V and 5 V logic compatible and can be directly connected to microcontroller ground to maximize signal integrity. Undervoltage lockout (UVLO) on both floating output supplies forces the corresponding outputs low in the event of insufficient supply voltage, supporting safe system startup. An exposed pad provides low thermal impedance, improving heat dissipation under sustained heavy loads, a characteristic directly relevant to the continuous high-utilization operating profiles of AI inference and training infrastructure. Applications include solid-state transformers and circuit breakers, power supply and battery backup units, intermediate bus converters, and second-stage DC conversion power modules. | 17.09.2026 09:30:00 | Sep | news_2026-10-01_11.jpg | \images\news_2026-10-01_11.jpg | https://www.infineon.com/technology-news/2026/inftn202609-139 | infineon.com |
| Distribution Agreement with Current Sensor Company | Avnet Silica announced a distribution agreement wi... | 13984 | Industry News | Distribution Agreement with Current Sensor Company | Avnet Silica announced a distribution agreement with LEM. Under the agreement, Avnet Silica will offer LEM’s portfolio of PCB-mounted and module-mounted current sensors, covering currents from below 1 A up to 42 kA, voltage sensors for applications up to 6.4 kV, and Rogowski coil solutions for grid monitoring and instrumentation. As electrification raises the performance and safety demands placed on power systems, accurate current and voltage measurement is becoming increasingly important to engineers. LEM provides a range of galvanically isolated sensing technologies for high-current and high-voltage applications, supporting precise system control, fault and overload detection, and energy management. LEM’s sensing solutions are designed for applications across automotive, e-mobility and EV charging, data centres, energy, industrial automation and smart infrastructure. | 17.09.2026 06:00:00 | Sep | news_2026-10-01_1.jpg | \images\news_2026-10-01_1.jpg | https://my.avnet.com/wcm/connect/ca9b2830-fdbb-4fad-a1f0-5b81061f3b73/avs-lem-sensing-portfolio-2026.pdf?MOD=AJPERES&ContentCache=NONE&CACHE=NONE&CVID=q2LP-mb | avnet.com |
| 60 V Dual Power MOSFETs | Taiwan Semiconductor introduces a family of automo... | 13996 | Product Release | 60 V Dual Power MOSFETs | Taiwan Semiconductor introduces a family of automotive-grade power MOSFETs to its TQM Series. Available in a PDFN56UD, the 60 V dual n-channel devices support drop-in pin compatibility with other commonly used package types. The devices’ 5 mm × 6 mm packaging with heat-spreader contacts enables drain currents of 40 A and an R<sub>DS(ON)</sub> of 13 mΩ. Additionally, their wettable flank connections are suited for automated placement. TSC’s 60 V dual power PDFN56UD MOSFETs are suited for applications like H-bridge and half-bridge rectifiers, motor/actuator controls and solenoid drives. All are produced to meet AEC-Q standards, and documentation for the production part approval process (PPAP) can be provided. | 15.09.2026 11:30:00 | Sep | news_2026-10-01_13.png | \images\news_2026-10-01_13.png | https://www.taiwansemi.com/en/product-filter/?category=automotive-mosfets-21 | taiwansemi.com |
| MOSFET with wide-SOA for Automotive Safety Functions and Protection Circuits | ROHM has developed the RS4P063BPHZG, a 100 V MOSFE... | 13995 | Product Release | MOSFET with wide-SOA for Automotive Safety Functions and Protection Circuits | ROHM has developed the RS4P063BPHZG, a 100 V MOSFET optimized for automotive safety functions and protection circuits. The device achieves a wide-SOA (Safe Operating Area) across a broad voltage range in the standard HPLF5060 (5060-size) package widely used in automotive applications. By incorporating a design that effectively suppresses secondary breakdown, it delivers approximately 5 times the SOA tolerance of standard equivalent-sized products under V<sub>DS</sub> = 100 V and P<sub>W</sub> = 100 μs. This contributes to greater reliability in automotive applications subject to momentary high-power loads, including airbag inflator ignition circuits and seatbelt pretensioner drive circuits. ROHM is developing automotive Wide-SOA MOSFETs in the HPLF8080 (8.0 mm × 8.0 mm) and TOLG (TO-Leaded with Gullwing, 9.9 mm × 11.7 mm) packages as well. | 15.09.2026 10:30:00 | Sep | news_2026-10-01_12.jpg | \images\news_2026-10-01_12.jpg | https://www.rohm.com/news-detail?news-title=2026-09-15_news_mosfet&defaultGroupId=false | rohm.com |
| 4th Generation of X-Capacitor Discharge IC Family | Power Integrations expanded its CAPZero™ fam... | 14047 | Product Release | 4th Generation of X-Capacitor Discharge IC Family | Power Integrations expanded its CAPZero™ family of X-capacitor discharge ICs with the introduction of the CAPZero-4 device for industrial and consumer applications. Power Integrations pioneered the X-capacitor discharge function, which disengages the energy-consuming discharge resistor in an AC-DC power supply until the device is unplugged and the resistor is needed to safely bleed power from the X-capacitor. The latest iteration, the CAPZero-4 family, reduces system no-load and standby input power by up to 1000 mW – critical when total system standby power requirements can be as low as 300 mW. This is achieved by a device which consumes less than 1 mW to support zero-watt no-load operation. It operates in the temperature range of -40 °C to 125 °C. CAPZero-4 ICs meet the needs of the appliance, display, adapter, and industrial markets supporting AC/DC converters with line-to-neutral input capacitance between 100 nF and 6 μF. By eliminating the losses typically caused by the X-capacitor bleed resistors, the technology increases the available standby power for embedded power supplies that must meet strict standby power limits. Since introducing the technology in 2010, Power Integrations has shipped more than one billion CAPZero ICs. The power consumption is below 0.75 mW at 230 VAC, enabling solutions with zero no-load power. It enables a drop-in replacement through package and pin-compatibility with CAPZero-3. Designing with the CAPZero-4 basically means selecting the appropriate external resistor values to meet the necessary X-capacitor discharge time. Furthermore, there is global safety compliance as designs using CAPZero-4 meet IEC 60335, EN/IEC 62368-1 (NEMKO), UL 62368-1, and GB 4943.1 (CQC) standards. | 15.09.2026 10:30:00 | Sep | news_2026-11-15_13.jpg | \images\news_2026-11-15_13.jpg | https://investors.power.com/news/news-details/2026/Power-Integrations-Unveils-4th-Generation-of-Pioneering-CAPZero-X-Capacitor-Discharge-IC-Family/default.aspx | power.com |
| Munich Oktoberfest: Commercial Battery Storage Systems solve Power Grid Capacity Issues at “Tents” | The world’s largest public festival has become inc... | 13988 | Industry News | Munich Oktoberfest: Commercial Battery Storage Systems solve Power Grid Capacity Issues at “Tents” | The world’s largest public festival has become increasingly electrified since Russia’s first attack of Ukraine. However, the physical power grid infrastructure on site is reaching its limits. Munich’s municipal utility company, Stadtwerke München (SWM), could only further increase capacity at the medium-voltage level at disproportionate cost. This year SWM ensures the reliable operation of the large Pschorr-Bräurosl and Löwenbräu festival “tents” (halls) with three commercial battery storage systems supplied by the TESVOLT. A large festival tent is provided with a grid connection capacity of around 420 kW by SWM, but actual demand can surge to well over 500 kW during peak periods. At those moments, the grid connection is operating under continuous overload. The appetite for electricity at the Theresienwiese has multiplied within a short period of time. In addition to the move away from gas since the start of Russia's war of aggression against Ukraine, new and stricter municipal emissions regulations accelerate the transition to electric-powered systems. As even small food stalls are now required to comply with extensive regulations governing the use of gas, tent operators can save money by switching to fully electric kitchens, avoiding the installation of costly exhaust gas systems and monitoring equipment. At the same time, comfort levels are increasing. The patio heaters in outdoor areas alone now require up to 150 kW per tent. Particularly in cooler weather, peak loads rise significantly, as the heaters consume large amounts of electricity. This power is now supplied decentrally by the battery storage systems, reducing the strain on the tents’ grid connections. | 15.09.2026 10:00:00 | Sep | news_2026-10-01_5.png | \images\news_2026-10-01_5.png | https://www.tesvolt.com/en/press/munich-oktoberfest-tesvolt-commercial-battery-storage-systems-solve-power-grid-capacity-issues-at-festival-tents.html | tesvolt.com |
| Fully regenerative Dynamic Test System for 800 V AI Data Center Power | With the EA-ELR 21000 Tektronix introduces a dynam... | 13993 | Product Release | Fully regenerative Dynamic Test System for 800 V AI Data Center Power | With the EA-ELR 21000 Tektronix introduces a dynamic test system, which acts as an auto-ranging, high-dynamic electronic load test system built on a fully regenerative architecture for validating the ±400 V and 800 V DC power architectures emerging in AI data centers. Rather than dissipating absorbed test energy as heat, the system returns it to the grid with up to 95 % regenerative efficiency, helping manufacturers conduct sustained high-power validation with less demand on lab power and cooling infrastructure. The system is built around the EA-ELR 21000-80 4U HS, a 30 kW regenerative electronic load module rated for up to 1,000 V and up to 80 A. The EA-ELR 21000 Dynamic Test System delivers up to 12 A/μs at 240 kW of current slew rate to emulate the rapid load transitions that challenge 800 V power shelves and power racks. It provides up to 1.92 MW of modular test capacity across up to eight racks and 64 loads, expanding in 30 kW increments. Each rack delivers up to 240 kW in a 0.6 m<sup>2</sup> footprint. The EA-ELR 21000-80 4U HS is rated for up to 1,000 V, 80 A and 30 kW in 4U. Integrated waveform generation supports repeatable load profiles, while coordinated controls enable multiple loads to operate as one synchronized test system. The modular architecture also allows to service individual modules without disrupting the entire system. The EA-ELR 21000 is also designed for solid-state transformers that convert medium-voltage AC power for high-power DC infrastructure. | 15.09.2026 08:30:00 | Sep | news_2026-10-01_10.jpg | \images\news_2026-10-01_10.jpg | https://www.tek.com/en/news/tektronix-unveils-regenerative-test-system-for-800v-ai-data-center-power | tek.com |
| 140 W USB-C Power Delivery Reference Design | Eggtronic introduced a 140 W USB-C Power Delivery ... | 13998 | Product Release | 140 W USB-C Power Delivery Reference Design | Eggtronic introduced a 140 W USB-C Power Delivery AC/DC reference platform for next-generation premium laptops and high-performance devices. This reference design is developed based on Renesas’ high-voltage GaN transistors combining Eggtronic's EPIC™ combo controller with Renesas' high-voltage GaN device, the TP70H150G4LSG (700 V, 150 mΩ R<sub>DS(on)</sub>). Unlike conventional high-power USB-C adapters that rely on costly LLC, Asymmetrical Half-Bridge (AHB), or Active Clamp Flyback (ACF) topologies, this reference design achieves efficiencies approaching 96 % while maintaining the bill of materials cost of a traditional QR flyback converter. The platform also delivers 94.5 % efficiency at 90 V<sub>AC</sub> input enabling compliance with the latest DOE Level VII energy efficiency requirements. At the heart of the solution is Eggtronic's EPIC combo controller, which integrates major control function into a single device, including totem pole Power Factor Correction (PFC), isolated primary-side regulation, synchronous rectification, proprietary low-latency isolated communication and USB Power Delivery protocol management. The platform's Totem Pole PFC overcomes two of the most common limitations of conventional implementations, EMI performance and light-load efficiency. The PFC stage feeds Eggtronic's proprietary QuarEgg™ regenerative flyback architecture, which utilizes a single primary-side switch to achieve higher efficiency and lower system cost than LLC, AHB, and ACF converters while maintaining the simplicity and economics of a QR flyback design. | 14.09.2026 13:30:00 | Sep | news_2026-10-01_15.jpg | \images\news_2026-10-01_15.jpg | https://www.eggtronic.com/eggtronic-introduces-high-efficiency-140w-usb-c-power-delivery-reference-design-powered-by-renesas-gan-transistors/ | eggtronic.com |
| Anti-Surge Chip Resistors in 0402 Size | ROHM has developed the “SDR01 Series” of high anti... | 14009 | Product Release | Anti-Surge Chip Resistors in 0402 Size | ROHM has developed the “SDR01 Series” of high anti-surge chip resistors, delivering a rated power of 0.33 W in the 0402 (1005 Metric) size. Designed for electronic equipment where mounting densities continue to increase, the series is well suited for automotive, industrial, consumer electronics, and AI server applications. The products help save board space and reduce component count by enabling replacement of larger-size resistors and consolidation of resistors while maintaining the reliability required of anti-surge chip resistors. ROHM optimized the resistive element and electrode designs of the SDR01 Series. This enables high rated power to be guaranteed in the 0402 size while securing the reliability expected of high anti-surge chip resistors. The devices guarantee 0.33 W up to the rated terminal temperature of T<sub>k</sub> = 125°C. In addition, these products achieve a TCR of ±100 ppm/°C for 10 ohm; ≤ R ≤ 2.2 MΩ. By suppressing resistance-value fluctuations caused by temperature changes, the components support stable circuit operation and contribute to smaller, more reliable power supply circuits and peripheral interface circuits. | 10.09.2026 06:30:00 | Sep | news_2026-10-15_9.jpg | \images\news_2026-10-15_9.jpg | https://www.rohm.com/news-detail?news-title=2026-09-10_news_resistor&defaultGroupId=false | rohm.com |
| Thermoelectric Generators | Same Sky® (formerly CUI Devices) and its Therm... | 14000 | Product Release | Thermoelectric Generators | Same Sky® (formerly CUI Devices) and its Thermal Management Group expanded its thermoelectric generator (TEG) modules product line. Utilizing the temperature difference between the hot and cold side of the module to generate usable power, the SPG family of thermoelectric generators now offers output power up to 27.3 W in expanded package sizes from 30 x 30 mm<sup>2</sup> to 80 x 80 m mm<sup>2</sup> m with profiles as of e.g. 3.5 mm. They are suited for applications where waste heat is present, like industrial processes, to recover energy that would otherwise be lost. These TEG modules feature silicone sealing, continuous maximum hot side temperatures up to 300 °C, and graphite pad options for a simplified thermal interface. Additional specifications measured under conditions (T<sub>h</sub> = 300 °C / T<sub>c</sub> = 30 °C) include an open circuit voltage of 8 to 17.7 V<sub>DC</sub>, a matched load resistance of 0.83 to 5.7 Ω, a matched load output voltage of 4 to 8.8 V with a matched load output current of 1 to 5.7 A. The heat flow across the module is 90 to 525 W, while the heat flow density is 6.2 to 13.2 W/cm<sup>2</sup>. | 09.09.2026 15:30:00 | Sep | news_2026-10-01_17.jpg | \images\news_2026-10-01_17.jpg | https://www.sameskydevices.com/news/press-releases/same-sky-expands-thermoelectric-generators-product-line | sameskydevices.com |
| TDAP Stage 2 Certificate for EMC Chokes | The Würth Elektronik lab at its Quality Design Cen... | 14008 | Industry News | TDAP Stage 2 Certificate for EMC Chokes | The Würth Elektronik lab at its Quality Design Center Asia in Shenzhen/China has been awarded with the TDAP Stage 2 certificate for the product “choke for suppressing electromagnetic interference” by VDE Prüf- und Zertifizierungsinstitut GmbH. This entitles Würth Elektronik to conduct tests in its own lab at its Chinese site under the supervision of VDE experts. The test results are recognized by VDE and, if successful, can lead to VDE certification. The VDE Institute’s TDAP (Test Data Acceptance Program) accelerates the certification process, thereby reducing time to market. Specifically, the certification of the laboratory in Shenzhen means that Würth Elektronik is permitted to conduct acceptance testing of its common-mode chokes in accordance with IEC 60938. Assessment of the lab at the recently expanded Quality Design Center (QDC) Asia was accompanied by intensive technical discussions. The successful certification was followed by a presentation ceremony in Offenbach, where Yangyang Chen, Head of Würth Elektronik’s facility in Shenzhen, received the certificate. | 09.09.2026 13:00:00 | Sep | news_2026-10-15_8.jpg | \images\news_2026-10-15_8.jpg | https://www.we-online.com/en/news-center/press/press-releases?d=vde-certification | we-online.com |
| Battery Cells provide more Energy at the same Weight | Together with partners from research and industry,... | 13987 | Industry News | Battery Cells provide more Energy at the same Weight | Together with partners from research and industry, the Fraunhofer Institute for Solar Energy Systems ISE has modified the structure of battery electrodes so that the battery cells can store 10 to 15 percent more energy at the same weight. They achieved this by more than tripling the coating thickness of the battery electrodes - for example, in lithium-ion batteries - which simultaneously reduces the number of current collectors in the battery cell. The research team implemented the new electrode architecture in lithium-ion pouch cells manufactured using industry-standard processes. Furthermore, they successfully applied the concept to zinc-ion and sodium-ion battery cells. Normally, the anode and cathode consist of many thin, alternating layers of electrode coating and current collectors. Fraunhofer ISE has managed to increase the thickness of the electrode coating from the previously standard 100 to 200 μm to up to 800 μm, thereby significantly reducing the number of current collectors required. As a result, there is now much more space for active material, which increases the energy density by 10 to 15 percent, depending on the battery type and design. The research team initially validated the new electrode architecture for zinc-ion, sodium-ion, and lithium-ion batteries experimentally using small battery cells in the laboratory. For lithium-ion batteries, they also manufactured prototypes of pouch battery cells with this electrode structure on a semi-automated production line in the cleanroom of the Fraunhofer ISE Battery Materials and Cell Production Lab. The battery electrodes are PFAS-free and are manufactured without the use of toxic solvents. | 09.09.2026 09:00:00 | Sep | news_2026-10-01_4.jpg | \images\news_2026-10-01_4.jpg | https://www.ise.fraunhofer.de/en/press-media/press-releases/2026/more-energy-at-the-same-weight-fraunhofer-ise-optimizes-battery-cells.html | ise.fraunhofer.de |
| Acquisition of Interconnect Technology Company | Harwin has acquired KEC Limited, a UK-based design... | 13986 | Industry News | Acquisition of Interconnect Technology Company | Harwin has acquired KEC Limited, a UK-based designer and manufacturer of rugged interconnect technologies for the aerospace, defence and high-end industrial sectors. Founded in 1979, KEC manufactures EMC backshells and panel fittings that deliver long-term, reliable operation in complex, mission-critical applications. Harwin will now add the full range of KEC technologies and services to its existing portfolio of high-reliability signal, power and coax connector technologies and accessories. In addition to expanding the Harwin product range, the acquisition will make available KEC’s circular and D-type EMC backshells, glands and panel fittings and fully bespoke solutions to a wider market thanks to Harwin’s global sales, distribution and support network. | 09.09.2026 08:00:00 | Sep | news_2026-10-01_3.jpg | \images\news_2026-10-01_3.jpg | https://www.harwin.com/blog/harwin-kec-acquisition | harwin.com |
| Common Mode Chokes with higher Voltage Rating | ITG Electronics has introduced its C201371B Series... | 13992 | Product Release | Common Mode Chokes with higher Voltage Rating | ITG Electronics has introduced its C201371B Series of 300 V<sub>AC</sub> NanoCrystal common mode chokes (CMCs), providing an EMI filtering option for higher-voltage electronic systems. This expansion of ITG's 250 V<sub>AC</sub> C201371A Series, the C201371B family increases the voltage rating to 300 V<sub>AC</sub>. The upgrade helps designers address more demanding operating conditions, increase safety margins against transient surges, and support compliance with applicable safety standards, including UL/IEC 60938-2 and IEC 62368-1. The series uses nanocrystalline core material, produced by rapidly cooling molten metal to create crystals with grain sizes on the nanoscale. The material's high permeability enables designers to achieve the required inductance with fewer winding turns. In turn, the chokes can provide lower direct current resistance (DCR), helping reduce power loss and improve overall system efficiency. Compared with ferrite-based common mode chokes, the C201371B Series can save approximately 30-60 % in space and weight. This combination of smaller size, lower weight and reduced DCR makes the series well suited to power electronics designs in which thermal performance, efficiency and board space are critical considerations. Available in through-hole configurations, the C201371B Series spans inductance values from 0.4 mH to 11.0 mH, DCR values from 20.0 mΩ to 380.0 mΩ, and maximum current ratings from 4.5 to 0.9 A. The components are designed for AC/DC converters used in industrial equipment and automotive applications, as well as other commercial and consumer electronics requiring compact common-mode noise suppression. | 09.09.2026 07:30:00 | Sep | news_2026-10-01_9.png | \images\news_2026-10-01_9.png | https://www.itg-electronics.com/en/series/950 | itg-electronics.com |
| Battery Company relocates within Silicon Valley | Ensurge Micropower, a company active in solid-stat... | 13985 | Industry News | Battery Company relocates within Silicon Valley | Ensurge Micropower, a company active in solid-state lithium microbatteries, is relocating its San Jose operations. The move gives Ensurge a fully equipped, battery-focused environment, purpose-built to accelerate its proprietary lithium solid-state microbattery development and pilot-line operations, as well as a state-of-the-art space to host customers, partners, and stakeholders across med-tech, consumer electronics, IoT, and defense markets. The 32,000-square-foot facility is designed around the company's core technology development and operational needs, creating an environment for both pilot production and commercialization. Under the transition plan, Ensurge will still retain a defined process area at its current site through year-end to maintain continuous operations as equipment and workflows are transferred and qualified. | 09.09.2026 07:00:00 | Sep | news_2026-10-01_2.jpg | \images\news_2026-10-01_2.jpg | https://www.ensurge.com/en/posts/ensurge-micropower-relocates | ensurge.com |
| Electrical Safety Testers | The electrical safety testers of Kikusui’s TOS5400... | 13991 | Product Release | Electrical Safety Testers | The electrical safety testers of Kikusui’s TOS5400 Series perform two of the four fundamental safety tests: withstanding voltage and insulation resistance tests, both essential for ensuring product reliability and safety. This series complies with major international safety standards, including IEC, EN, BS, VDE, UL, CSA, GB, and JIS. In addition, to ensure stable and reliable measurements, the TOS5400 Series is equipped with a high-efficiency PWM switching amplifier, which means, that it can maintain a stable output voltage even when the AC line voltage or frequency fluctuates, enabling consistent evaluation in regions where the power supply is unstable. The discharge detection function allows the response speed (sensitivity) to be adjusted, making it possible to detect momentary discharges and high-frequency discharge components such as arc and corona discharges. The TOS5400 is also the first Kikusui withstanding voltage and insulation resistance tester featuring a touchscreen display. Its intuitive interface is claimed to simplify operation, to reduce setup time, and to support more efficient and easier test execution. It is well suited for R&D and QA testing, laboratories, production line inspections and certification bodies looking to enhance both the accuracy and efficiency of their safety evaluation processes. | 09.09.2026 06:30:00 | Sep | news_2026-10-01_8.png | \images\news_2026-10-01_8.png | https://global.kikusui.co.jp/products-index/safety-testers/ | kikusui.co.jp |
| TMR Switch Family expanded with leaded TO-92 Package Option | Littelfuse announced the TX00AT314AMA Omnipolar TM... | 13999 | Product Release | TMR Switch Family expanded with leaded TO-92 Package Option | Littelfuse announced the TX00AT314AMA Omnipolar TMR Switch Sensor, the latest addition to the TX00 TMR Switch family. The TX00AT314AMA delivers the same performance as the SOT-23-3 TX00AS314TRA in a leaded TO-92 package and with South Korea country of origin, providing design teams with a new form factor option and a diversified supply chain. The TX00AT314AMA integrates a precision TMR (Tunnel Magnetoresistance) sensing element with CMOS signal-processing circuitry - including an on-chip voltage generator, low-noise amplifier, comparator, and Schmitt trigger. Like its SOT-23-3 sibling, it features X-axis (in-plane) magnetic sensing for detection of fields parallel to the sensor surface. The device operates with a typical supply current of 1.5 μA and supports high-speed detection up to 1 kHz. Like all TX00 family members, the TX00AT314AMA features omnipolar detection with a sensitivity of about 14 Gauss, allowing it to respond to both North and South magnetic poles without polarity alignment constraints. Its operate and release thresholds, combined with built-in hysteresis are said to enable bounce-free switching even in electrically noisy environments. Typical applications are building and home automation (smart meters with tamper detection, position and limit sensing, industrial automation (proximity sensing), consumer electronics (appliances, power tools, battery-powered IoT and wearable devices as well as utilities (gas, water, and heat metering). | 08.09.2026 14:30:00 | Sep | news_2026-10-01_16.jpg | \images\news_2026-10-01_16.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-expands-omnipolar-tmr-switch-family-with-leaded-to-92-package-option | littelfuse.com |
| 600 V Super Junction MOSFETs | Alpha and Omega Semiconductor (AOS) released &alph... | 13997 | Product Release | 600 V Super Junction MOSFETs | Alpha and Omega Semiconductor (AOS) released αMOS E2™ 600 V Super Junction MOSFETs: AOGT037V60DE2 (600 V, 37 mΩ) and AOGT060V60DE2 (600 V, 60 mΩ). These devices are suited for applications including servers, workstations, telecom rectifiers, solar inverters, motor drives and industrial power systems. This MOSFET platform features a body-diode ruggedness with a di/dt of 1500 A/μs, in a top-side-cooled GTPAK™ package to increase thermal performance via the top-side cooling pad. As a result, system designers can enhance thermal dissipation and reclaim PCB space to maximize overall power density. | 08.09.2026 12:30:00 | Sep | news_2026-10-01_14.jpg | \images\news_2026-10-01_14.jpg | https://www.aosmd.com/news/alpha-and-omega-semiconductors-new-amos-e2-600v-super-junction-mosfets-support-optimized | aosmd.com |
| Europe’s Battery Storage Boom Accelerates | Europe’s battery storage market is entering its mo... | 13951 | Industry News | Europe’s Battery Storage Boom Accelerates | Europe’s battery storage market is entering its most transformative year yet, with annual installations forecast to rise from 32 GWh in 2025 to 57 GWh in 2026, a 78% year-on-year increase, according to EUPD Research’s latest EES Report© Europe H1 2026. The milestone signals a fundamental shift in Europe’s energy transition, as battery storage becomes critical infrastructure for renewable integration, grid flexibility and electrification across residential, commercial and utility-scale markets. Germany, Bulgaria, Italy, the United Kingdom and Spain are expected to lead Europe’s battery storage market in 2026. Bulgaria’s emergence among Europe’s leading markets demonstrates the transformative impact of EU recovery funding, highlighting growing momentum across Central and South-Eastern Europe. Growth is driven by falling battery costs, rising electricity prices, and increasing adoption of solar-plus-storage systems to maximize self-consumption and reduce energy bills. Commercial and industrial storage is gaining traction as businesses seek to reduce energy costs and optimize on-site generation, while utility-scale deployment is accelerating, supported by improving market opportunities and policy frameworks, despite persistent grid-connection and permitting challenges. The residential segment remains one of Europe’s strongest growth engines, with installations expected to increase from 11 GWh in 2025 to 15 GWh in 2026, a 36% annual increase. Germany remains the largest residential market, followed by Italy, the Netherlands, the UK and Austria. In 2025, BYD, Huawei, Sungrow and Fox ESS were the leading brands, with BYD and Huawei retaining prominent positions and together accounting for more than 30% of the total share. | 07.09.2026 09:00:00 | Sep | news_2026-09-15_4.png | \images\news_2026-09-15_4.png | https://eupd-group.com/europes-battery-storage-boom-accelerates-as-2026-installations-set-to-jump-78-yoy/ | eupd-group.com |
| Smart Power Stage Exceeds 2 A per Square Millimeter | Infineon Technologies introduces the TDA235E5 and ... | 13958 | Product Release | Smart Power Stage Exceeds 2 A per Square Millimeter | Infineon Technologies introduces the TDA235E5 and TDA235E0, a dual-phase smart power stage family designed to meet the power density requirements of next-generation AI accelerators and vertical power delivery modules. Integrating Infineon’s OptiMOS™ 6 MOSFETs and a dual-phase driver IC in a compact 6 x 6 x 0.8 mm³ package, this family delivers a power density exceeding 2 A/mm², which is claimed to set a new reference point for power stage performance in high-current AI processor applications. The two devices support up to 300 A peak current and 120 A total design current (TDC), making them well suited for next-generation AI xPU accelerators as well as conventional server CPUs in datacenter environments. Both lateral and vertical power delivery configurations are supported, providing the design flexibility required as the industry transitions toward vertical power module architectures in advanced AI processor packages. The TDA235E5 and TDA235E0 integrate into Infineon’s end-to-end AI server power delivery ecosystem, spanning the full power chain from grid interface to processor core rails. | 07.09.2026 08:30:00 | Sep | news_2026-09-15_11.jpg | \images\news_2026-09-15_11.jpg | https://www.infineon.com/technology-news/2026/inftn202609-136 | infineon.com |
| Low-Noise DC Power Supplies designed for Test Environments | Kikusui Electronics has introduced the PMX-E Serie... | 13956 | Product Release | Low-Noise DC Power Supplies designed for Test Environments | Kikusui Electronics has introduced the PMX-E Series of DC power solutions for the engineers’ daily work. Each unit is equipped with communication interfaces like LAN, USB, and RS-232C. These interfaces enable seamless connection to automated test setups, data acquisition systems, and remote-control environments. PMX-E weighs approximately 5–6 kg (depending on the model), and is optimized for benchtop use. All models feature front-facing output terminals, which simplify wiring and make connecting load harnesses faster. Depending on the model the output voltage is between 18 V and 500 V delivering between 0.1 A and 5 A. | 04.09.2026 06:30:00 | Sep | news_2026-09-15_9.png | \images\news_2026-09-15_9.png | https://global.kikusui.co.jp/w2-2/dc-power-supply-en/pmx-e/pmx-e/ | kikusui.co.jp |
| Baseplate-cooled 320 W Full-Brick AC/DC Power Supplies | XP Power introduces the ASB320 series of 320 W ful... | 13963 | Product Release | Baseplate-cooled 320 W Full-Brick AC/DC Power Supplies | XP Power introduces the ASB320 series of 320 W fully integrated, baseplate-cooled AC/DC power supplies offering single output from 12 V to 54 VDC in an encapsulated brick format. Global ITE safety approvals, Class B emissions and a low-profile rugged mechanical design make these power supplies suitable for space-constrained industrial automation, communications, test and measurement, and analytical instrumentation equipment. Featuring a built-in EMC filter, AC fuse, and bulk storage capacitor, the units reduce external components. The efficiency of up to 94 % and baseplate cooling at operating temperatures from -40 °C to +90 °C enable operation in compact sealed or fanless systems. The ASB320 offers seven single DC output voltages: 12, 15, 24, 28, 36, 48, and 54 VDC, and features a universal input range of 90 to 264 VAC. With peak power capability of up to 360 W for 5 s, the units provide headroom for transient loads without oversizing. In addition, the ±5 % output voltage trim helps engineers optimize system performance for specific load requirements. The units offer in-built over current, over voltage and over temperature protection circuitry. | 03.09.2026 13:30:00 | Sep | news_2026-09-15_16.jpg | \images\news_2026-09-15_16.jpg | https://www.xppower.com/resources/press-releases/320w-ac-dc-power-supplies-ITE%20applications | xppower.com |
| 3D-PEIM 2026 Registration Now Open | The rapid emergence of AI infrastructure is fundam... | 13953 | Event News | 3D-PEIM 2026 Registration Now Open | The rapid emergence of AI infrastructure is fundamentally reshaping power electronics, advanced packaging, and heterogeneous integration. Higher current densities, vertical power delivery architectures, thermal management, reliability, advanced materials, and AI-assisted design are becoming central challenges for next-generation computing systems. 3D-PEIM 2026 brings together researchers and industry leaders developing the technologies that will enable this transformation. Taking place November 16–19, 2026 at Arizona State University in Tempe, Arizona (USA), the symposium offers a technical program spanning the complete ecosystem of power electronics integration - from materials and manufacturing to system architecture and AI-driven design. This year’s program features a collection of plenary and keynote presentations addressing the rapidly evolving relationship between AI computing and power electronics. The presentations are complemented by invited talks on AI-enabled EDA, AI-driven power electronics co-design, advanced thermal solutions, integrated magnetics, heterogeneous packaging, and high-density voltage regulation, highlighting the multidisciplinary innovations driving future AI hardware. Beyond the Technical Sessions four expert-led tutorials on advanced packaging, sintering technologies, digital twins, and magnetic materials as well as an industry-academic panel discussion on key challenges in 3D power electronics packaging and manufacturing will complement the program. | 03.09.2026 11:00:00 | Sep | news_2026-09-15_6.jpg | \images\news_2026-09-15_6.jpg | https://www.3d-peim.org/registration/ | 3d-peim.org |
| PCIM Asia Shenzhen 2026 with higher international Attendance | PCIM Asia Shenzhen concluded its 2026 edition at t... | 14001 | Event News | PCIM Asia Shenzhen 2026 with higher international Attendance | PCIM Asia Shenzhen concluded its 2026 edition at the Shenzhen World Exhibition & Convention Center on 28 August. For three days 271 companies showcased across 30,000 square metres of exhibition space products and technologies from across the power electronics value chain, including solutions for e-mobility, AI data centres and renewable energy & smart energy. Alongside the exhibition, the PCIM Asia Shenzhen Conference featured 131 academic presentations by senior experts, scholars and representatives of leading global companies. Together, the exhibition and conference enabled discussion between companies, researchers and technical specialists, earning positive feedback from participants throughout the event. Added-up, 25,313 visitors attended the event, which is a 49 % increase over PCIM Asia Shanghai 2025, and 1,300 visitors (183 % increase) came from overseas. Mitsubishi Electric and Infineon Technologies supported PCIM Asia Shenzhen as Strategic Partners, with Semikron Danfoss, Fuji Electric and ROHM participating as Platinum Sponsors. The next event in PCIM's China series, PCIM Asia Shanghai, will take place from 24 – 26 August 2027 at the Shanghai New International Expo Centre in China. | 03.09.2026 06:00:00 | Sep | news_2026-10-15_1.jpg | \images\news_2026-10-15_1.jpg | https://pcimasia-shanghai.cn.messefrankfurt.com/shanghai/en/press/press-releases/2026/PCIM26_FR.html | pcimasia-shanghai.com |
| 50 W and 100 W DC/DC Converters with 4:1 Input Range | RECOM has expanded its portfolio of isolated DC/DC... | 13964 | Product Release | 50 W and 100 W DC/DC Converters with 4:1 Input Range | RECOM has expanded its portfolio of isolated DC/DC converters with the RP50-AW and RP100-FW series. The converter families combine 4:1 input voltage ranges with robust isolation and comprehensive protection features for reliable operation in demanding environments. The RP50-AW series delivers up to 50 W output power in a compact 1×1 square inch footprint. The series supports input voltage ranges from 9-36 VDC and 18-75 VDC, offers efficiencies up to 93%, and features 2.25 kVDC isolation. In addition to single-output versions, dual-output models are also available. The operating temperature range extends from -40 °C to +105 °C, while an optional heatsink version improves thermal performance in high ambient conditions. For higher power requirements, the RP100-FW series provides up to 100 W output power with efficiencies up to 94 %. The series also supports a 4:1 input range of 9-36 VDC or 18-75 VDC. They operate in the temperature range from -40 °C to +110 °C and at altitudes up to 5000 m. Dimensions of 50.8 × 25.4 × 10.7 mm³ are achieved without heatsink, while an optional heatsink version measuring 50.8 × 26.5 × 32.2 mm³ improves thermal performance in demanding operating conditions. Both series integrate several protection functions including overvoltage, overload, overtemperature and continuous short-circuit protection, together with remote ON/OFF control supporting positive or negative logic. They both comply with current RoHS and REACH requirements. The RP50-AW and RP100-FW series are suitable for industrial control systems, test and measurement equipment, communication infrastructure and transportation-related electronics. | 02.09.2026 14:30:00 | Sep | news_2026-09-15_17.jpg | \images\news_2026-09-15_17.jpg | https://recom-power.com/en/rec-n-new-50w-and-100w-dc!sdc-converters-combine-high-power-density-with-41-ultra-wide-input-range-480.html?5 | recom-power.com |
| Collaboration on Solid-State Transformers and Sidecars for AI Power | Infineon Technologies and Skeleton Technologies, w... | 13952 | Industry News | Collaboration on Solid-State Transformers and Sidecars for AI Power | Infineon Technologies and Skeleton Technologies, which is active in high-power energy storage systems e. g. for AI data centers, have signed a Memorandum of Understanding (MoU) to collaborate on high-efficiency, resilient power solutions for data centers. Solid-state transformers (SSTs) and high-power sidecars are increasingly important building blocks for AI data center infrastructure. They enable more efficient power conversion from grid to core and higher system resilience. Accordingly, the two companies aim to advance these technologies to improve energy efficiency and system performance throughout the power delivery chain. Under the agreement, Infineon and Skeleton will jointly explore and develop advanced architectures for the entire AI data center power chain that delivers electricity from grid to core. This includes next-generation SSTs for medium-voltage AC to high-voltage DC conversion. The companies intend to combine Infineon’s high-voltage CoolSiC™ power semiconductors with Skeleton’s expertise in power conversion systems and supercapacitor technology. The companies are also collaborating on GaN-based peak-shaving systems that combine Skeleton’s supercapacitor technology with Infineon’s CoolGaN™ power semiconductors. | 02.09.2026 10:00:00 | Sep | news_2026-09-15_5.jpg | \images\news_2026-09-15_5.jpg | https://www.infineon.com/technology-news/2026/inftn202609-134 | infineon.com |
| High-Speed Optocouplers for fast and Interference-Resistant Signal Transmission | Würth Elektronik is expanding its optoelectronics ... | 13960 | Product Release | High-Speed Optocouplers for fast and Interference-Resistant Signal Transmission | Würth Elektronik is expanding its optoelectronics portfolio with the WL-OCHS high-speed optocoupler. This component is designed for high-speed digital signal transmission between galvanically isolated circuit sections. The optocoupler supports data rates from 1 MBd to 10 MBd and provides an isolation voltage of up to 5000 V<sub>RMS</sub>. Optocouplers offer galvanic isolation of high voltages and potential differences. However, the short switching times (tpHL/tpLH) of 100 ns to 1500 ns enable the high-speed optocoupler to transmit signals with significantly lower delay than conventional optocouplers. Thanks to its high CMTI (common-mode transient immunity), the optocoupler ensures reliable signal transmission even during rapid input/output voltage changes in demanding, electrically noisy environments. In addition, a copper leadframe improves resistance to corrosion and environmental influences, significantly enhancing the robustness of the new optocoupler series. The device is suitable for microcontroller, FPGA, and DSP interfaces, as well as for serial communication interfaces such as UART, SPI, and RS-232/RS-485. Typical applications therefore include measurement and control technology, industrial electronics in high-interference environments, medical devices requiring safe electrical isolation, in addition to PLC and automation systems. | 01.09.2026 10:30:00 | Sep | news_2026-09-15_13.jpg | \images\news_2026-09-15_13.jpg | https://www.we-online.com/en/news-center/press/press-releases?d=wl-ochs | we-online.com |
| Collaboration on Power Semiconductor Solutions for EVs and HEVs | Nexperia will explore a strategic collaboration on... | 13950 | Industry News | Collaboration on Power Semiconductor Solutions for EVs and HEVs | Nexperia will explore a strategic collaboration on advanced power semiconductor solutions for automotive applications with Aurobay Technologies, a division of Horse Powertrain (a joint venture between Renault Group and Geely). The collaboration aims to combine Nexperia’s expertise in GaN and SiC semiconductor technologies with Aurobay Technologies’ capabilities in powertrain system design and integration. Building on the existing collaboration, the companies aim to evaluate how closer cooperation across semiconductor development and powertrain integration can support the next generation of electrified and hybrid vehicle platforms. The companies will assess opportunities to further optimize power electronics architectures for applications including traction inverters and power generation systems. | 01.09.2026 08:00:00 | Sep | news_2026-09-15_3.png | \images\news_2026-09-15_3.png | https://www.nexperia.com/about/news-events/press-releases/nexperia-explores-collaboration-on-next-generation-power-semiconductor-solutions-for-electrified-powertrains-with-aurobay-technologies | nexperia.com |
| European Partnership with Power Electronics Distribution Company | SemiQ has announced a distribution agreement with ... | 13954 | Industry News | European Partnership with Power Electronics Distribution Company | SemiQ has announced a distribution agreement with Ibérica Semiconductores de Potencia, a Spanish-headquartered specialist in power electronics. This partnership expands SemiQ’s European reach and support for its range of high performance SiC MOSFETs and Schottky diodes. Under the deal, Ibérica will have access to SemiQ’s complete portfolio of modules, discrete and bare-die products, and will provide these with application and design support to power system developers across the entire continent. Headquartered in Madrid, Ibérica will lead the development of SemiQ’s business in Spain, while supporting customers and opportunities across Europe. | 26.08.2026 12:00:00 | Aug | news_2026-09-15_7.jpg | \images\news_2026-09-15_7.jpg | https://semiq.com/semiq-expands-european-reach-and-support-through-partnership-with-power-electronics-distribution-specialist-isp/ | semiq.com |
| Multiaxial coreless Halleffect Current Sensor for (H)Evs | Texas Instruments (TI) introduced a multiaxial cor... | 13965 | Product Release | Multiaxial coreless Halleffect Current Sensor for (H)Evs | Texas Instruments (TI) introduced a multiaxial coreless Hall-effect current sensor designed for all hybrid electric vehicle and electric vehicle (HEV/EV) traction inverter applications. The TMCS2100-Q1 sensor offers current sensing through the combination of multiaxial measurement and a proprietary algorithm, which is said to eliminate the trade-off between precision and system size in traction inverter designs. While existing coreless solutions are limited to single-axis measurements, the TMCS2100-Q1 sensor measures magnetic fields in both horizontal and vertical directions. This multiaxial measurement is 20 times more accurate than single-axis alternatives, achieving displacement error of less than 1 % at 0.4 mm movement and as low as 0.25 % at 0.1 mm. This level- of precision improves the EV powertrain torque control loop, maximizing efficiency and power delivery across varying load and thermal conditions. TI’s current sensing technology measures both axes simultaneously. Vibration during vehicle operation creates movement between the sensor and conductor, causing single-axis, differential coreless sensors to lose accuracy. The TMCS2100-Q1 sensor reduces vibration-induced error by measuring magnetic fields in both horizontal and vertical axes at once. By eliminating the magnetic core without sacrificing precision, the TMCS2100-Q1 sensor enables smaller, more power-dense traction inverter designs, helping automakers build EVs that are more efficient. | 25.08.2026 15:30:00 | Aug | news_2026-09-15_18.png | \images\news_2026-09-15_18.png | https://www.ti.com/about-ti/newsroom/news-releases/2026/ti-debuts-new-approach-to-current-sensing-for-unprecedented-accuracy-in-hev-and-ev-traction-inverter-designs.html | ti.com |
| 650 V IGBTs | ROHM has developed its 4<sup>th</sup> Generation o... | 13961 | Product Release | 650 V IGBTs | ROHM has developed its 4<sup>th</sup> Generation of 650 V IGBTs, which is well-suited for automotive electric compressors and HV heaters, as well as for inverters in industrial equipment. The automotive-grade 650 V-class products operate with V<sub>CE(sat)</sub>= 1.55 V and comply with the AEC-Q101 automotive. The devices can withstand short-circuits for 7 μs at T<sub>j</sub> = 25 °C. The lineup includes 12 products in the TO-247N package, the RGAxxTS65HR / RGAxxTS65EHR series, and 10 bare wafer products, the SG83xxWN series. ROHM is also developing 12 products in the TO-247-4L package, the RGAxxTR65HR/RGAxxTR65EHR series. Design models and materials needed for circuit design are also available for download from ROHM’s official website. | 25.08.2026 11:30:00 | Aug | news_2026-09-15_14.jpg | \images\news_2026-09-15_14.jpg | https://www.rohm.com/news-detail?news-title=2026-08-25_news_igbt&defaultGroupId=false | rohm.com |
| German Semiconductor Manufacturer acquires Indian Semiconductor Power Tech Company | Infineon Technologies has acquired C2i Semiconduct... | 13937 | Industry News | German Semiconductor Manufacturer acquires Indian Semiconductor Power Tech Company | Infineon Technologies has acquired C2i Semiconductors, a Bangalore-based technology company specializing in software-defined multiphase controllers and smart power stages for AI data center applications. C2i Semiconductors’ technology is said to complement Infineon’s portfolio of power semiconductors and power systems, enabling intelligent and scalable power delivery architectures from grid to core for AI servers and high-performance computing platforms. The transaction is expected to close in the third quarter of calendar year 2026. This acquisition aims to strengthen Infineon’s position in power solutions for AI data centers and create a center of excellence for digital power technologies in India. C2i Semiconductors brings expertise in software-defined power management and system-level power architectures. Software-defined power solutions combine advanced power semiconductors with intelligent digital control and software algorithms to optimize power conversion, regulation and system performance in real time. As increasingly powerful AI processors create highly dynamic and rapidly changing power demands, power delivery systems must respond faster and more precisely to sudden load fluctuations while maintaining efficiency and system stability. By adding intelligence to the power delivery architecture, software-defined solutions help data center operators improve efficiency, reduce power losses, and support the increasing power density requirements of next-generation AI processors. C2i Semiconductors’ technology takes a system-level approach to power delivery, spanning the path from grid to core and enabling more intelligent and adaptive power architectures for AI infrastructure. | 24.08.2026 12:00:00 | Aug | news_2026-09-01_7.png | \images\news_2026-09-01_7.png | https://www.infineon.com/press-release/2026/infpr202608-129 | infineon.com |
| 1000 V Wire-to-Board Connector for Automotive Powertrains | The high-voltage ZE150HV Series wire-to-board conn... | 13957 | Product Release | 1000 V Wire-to-Board Connector for Automotive Powertrains | The high-voltage ZE150HV Series wire-to-board connector from Hirose is now commercially available. Suitable for electric vehicle (EV) and hybrid electric vehicle (HEV) powertrains, the connector features a 4.5 mm pitch and supports 1000 V AC/DC, 10 A per pin, and operating temperatures up to 125 °C. Engineered to meet IEC 60664 standards (Pollution Degree 2, altitude 6,000 m), the ZE150HV combines reliable electrical performance with mechanical stability. Traditionally, there is a standard distance required between pins of 6.8 mm to achieve 1000 V. The ZE150HV Series features a patented design that reduces this required distance to 4.5 mm. By placing proprietary ribs between the contacts, Hirose has reduced the size of the connector to support miniaturization of powertrain and other high-voltage systems. The double-spring structure increases pressure, strengthening the contact force and stabilizing the connection under severe vibration. A housing and built-in connector position assurance (CPA) mechanism helps prevent incomplete mating. This reduces the risk of electrical arcing or exposure, especially important in high-voltage environments. | 24.08.2026 07:30:00 | Aug | news_2026-09-15_10.png | \images\news_2026-09-15_10.png | https://info.hirose.com/ze150hv | hirose.com |
| Acquisition of VPD Company | Navitas signed a definitive agreement to acquire C... | 13949 | Industry News | Acquisition of VPD Company | Navitas signed a definitive agreement to acquire Claros, a power management solutions company developing vertical power delivery (VPD) and integrated voltage regulator (IVR) technology for next-generation AI data centers, in a transaction valued at up to approximately $232.8 million. Navitas’ potential acquisition of Claros would extend the Company’s AI infrastructure portfolio from the grid all the way to the xPU by bringing VPD and IVR capabilities that can directly power the high-current, high-speed processors at the heart of AI systems. On the last step of 800 V HVDC architectures, traditional voltage regulator modules (VRMs) push power sideways across the board, and as xPUs demand thousands of amps and near-instant response times, this lateral approach hits what Navitas refers to as a "power wall". Bandwidth and compute performance are constrained by the limitations of existing power delivery systems. Through the combination of Navitas and Claros, the company expects to break through that wall from grid-to-xPU. Claros’ VPD and IVR technologies stack power conversion, drive, control, and passives into a single, compact package. By placing this solution directly beneath or inside the chip package or printed circuit board, power travels only millimeters instead of inches. The result is ultra-fast transient response, significantly lower impedance, higher efficiency at sub-volt levels, and the power density required for the next generation of AI compute. The transaction has been unanimously approved by the boards of directors of both companies and is expected to close before year-end, subject to customary closing conditions, including applicable regulatory approvals. | 24.08.2026 07:00:00 | Aug | news_2026-09-15_2.jpg | \images\news_2026-09-15_2.jpg | https://www.navitassemi.com/en/press-releases/navitas-to-acquire-claros-advancing-ai-infrastructure-with-vpd-and-ivr-technology-for-grid-to-xpu | navitassemi.com |
| Zait Akcam appointed as Managing Director of GVA | GVA Leistungselektronik has appointed Zait Akcam a... | 13931 | People | Zait Akcam appointed as Managing Director of GVA | GVA Leistungselektronik has appointed Zait Akcam as its new Managing Director. Mr. Akcam is already well known to many customers and partners through his many years as Head of Sales at the Mannheim/Germany-based company. With more than 30 years of experience in the semiconductor industry and his knowledge of international markets, he brings considerable industry and management expertise to his new role. In his new position, Akcam will drive the continued development of GVA, with a particular focus on the needs of customers and partners. One of his key priorities will be the ongoing development of the company’s product and service portfolio. The aim is to further strengthen GVA’s position as a trusted partner in power electronics and to continue providing customers with innovative solutions combined with the high level of service they have come to expect. | 22.08.2026 06:00:00 | Aug | news_2026-09-01_1.jpg | \images\news_2026-09-01_1.jpg | https://www.gva-power.de/en/ | gva-power.de |
| 650 W Thick Film Power Resistors | The power capabilities and compact package of thes... | 13947 | Product Release | 650 W Thick Film Power Resistors | The power capabilities and compact package of these devices by Vishay allow designers to reduce the number of parallel resistors required. Their performance is supported by a "cold system" baseplate design that enables efficient heat transfer to an external heatsink, maintaining stable operation over a wide temperature range from -55 °C to +155 °C. RPWA 650 series devices integrate a power resistor and optional embedded NTC temperature sensor in a single housing. Customizable cabling and an easy-mount design with self-calibrating pressure eliminate the need for board-level soldering, reduce wiring and assembly complexity, and enable faster plug and play integration in power modules and assemblies. Available in a range of resistance values from 6.2 Ω to 1 MΩ, with tolerances down to ± 5 %, the RPWA 650 series supports a variety of circuit functions, including precharge, discharge, active discharge, power conversion, and snubber operations. The devices are suited for automotive, energy, industrial, medical, and avionics systems used in harsh environments. Their maximum operating voltage is specified up to 6000 V<sub>DC</sub> with a dielectric strength to 7000 V<sub>RMS</sub>, and typical self-inductance of ≤ 40 nH. For high voltage and fast-switching circuits, this combination enables accurate energy dissipation and minimizes transient overshoot. The devices also offer a pulse energy capability, supporting repetitive operation up to 3.5 J per pulse for 50 μs pulses. The RoHS-compliant resistors are pending AEC-Q200 qualification. | 20.08.2026 15:30:00 | Aug | news_2026-09-01_17.jpg | \images\news_2026-09-01_17.jpg | https://www.vishay.com/en/company/press/releases/2026/RPWA-650/ | vishay.com |
| Collaboration on Battery Management Systems and Integrated PowerBox Solutions | Schaeffler and CATL have signed a memorandum of un... | 13936 | Industry News | Collaboration on Battery Management Systems and Integrated PowerBox Solutions | Schaeffler and CATL have signed a memorandum of understanding (MoU) in the field of e-mobility for the joint development of Battery Management Systems (BMS) and "X-in-1" Integrated PowerBox (IPB) solutions. The collaboration builds on an already secured customer project and addresses the growing demand for electrification solutions in the European market. Both companies are pursuing a long-term partnership. | 20.08.2026 11:00:00 | Aug | news_2026-09-01_6.jpg | \images\news_2026-09-01_6.jpg | https://www.schaeffler.com/en/media/press-releases/press-releases-detail.jsp?id=88211712 | schaeffler.com |
| 18 V GaN FET e.g. for Next-Generation AI Power Architectures | Efficient Power Conversion (EPC) announced the mas... | 13939 | Product Release | 18 V GaN FET e.g. for Next-Generation AI Power Architectures | Efficient Power Conversion (EPC) announced the mass production of the EPC2370, an ultra-low on-resistance 18 V eGaN® FET engineered to enhance the efficiency and power density of next-generation AI server power supplies. The EPC2370 has a 22 V transient voltage rating that allows it to replace MOSFETs with ratings up to 25 V. AI power architectures are transitioning to 800 V DC power distribution, adopting 6 V high-density, multi-kilowatt intermediate bus converters operating at 1 MHz. Developed on EPC’s seventh-generation GaN platform, the EPC2370 delivers a benchmark 101 A continuous current rating, 0.28 mΩ typical R<sub>DS(on)</sub>, 26 nC gate charge in a 3.3 mm × 3.3 mm thermally enhanced, dual-side-cooled PQFN package. The EPC2370 is optimized for center-tapped synchronous rectification in 48 V-to-6 V and 800 V-to-6 V power converters. Its 18 V continuous and 22 V transient ratings provide voltage margin for reliable operation while enabling peak efficiencies of 98 % and full-load efficiencies of 97 % in high-density power modules. Beyond AI servers, the EPC2370 is also suited for high-current DC/DC converters used in high-performance computing, telecommunications infrastructure, and advanced industrial power systems. To accelerate evaluation and product development, EPC also offers the EPC90168 evaluation board. Measuring 2" × 2", the EPC90168 features two EPC2370 GaN FETs configured as a half bridge. The board includes all critical components and an optimized layout to maximize switching performance. It also provides multiple probe points for convenient waveform measurements and efficiency evaluation. | 20.08.2026 07:30:00 | Aug | news_2026-09-01_9.jpg | \images\news_2026-09-01_9.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3353/epc-announces-mass-production-of-epc2370-18-v-gan-fet-for-next-generation-ai-power-architectures | epc-co.com |
| 1 W Isolated DC/DC Converters for Medical and ITE Applications | Bel Fuse launched its PTM1-S Series, a family of 1... | 13946 | Product Release | 1 W Isolated DC/DC Converters for Medical and ITE Applications | Bel Fuse launched its PTM1-S Series, a family of 1 W isolated DC/DC converters engineered to meet the growing demand for medically certified, high-isolation power in compact form factors. Housed in an encapsulated SIP-7 package, the series is built for medical instrumentation, harsh-environment equipment, and industrial control systems that require both dual medical and ITE safety certification in a single part. The PTM1-S Series offers 6000 V<sub>DC</sub> isolation and reinforced insulation rated for 300 V<sub>AC</sub>, protecting against surges and cross-circuit faults in applications where isolation integrity is critical. The series is dual certified to UL/IEC 62368 for information technology equipment and EN 60601 and 2xMOOP for medical use, giving engineers the flexibility to qualify a single part number across both medical and industrial designations rather than stocking separate solutions for each. The converters are rated for continuous operation across an extended -40 °C to +100 °C temperature range, making them well suited to harsh outdoor and industrial environments as well as controlled clinical settings. With a 1:1 input-to-output voltage ratio, the initial lineup spans 5, 12, 15, and 24 V<sub>DC</sub> input options with 5 and 12 V<sub>DC</sub> single outputs, covering the input rails most common in medical and industrial control platforms. | 19.08.2026 14:30:00 | Aug | news_2026-09-01_16.jpg | \images\news_2026-09-01_16.jpg | https://www.belfuse.com/resources/news/bel-launches-ptm1-s-series-1w-isolated-dc-dc-converters-for-medical-and-ite-applications | belfuse.com |
| Palm-sized Split Core Current Sensors with Accuracy up to 0.01 % | Yokogawa Test & Measurement released its second-ge... | 13943 | Product Release | Palm-sized Split Core Current Sensors with Accuracy up to 0.01 % | Yokogawa Test & Measurement released its second-generation of AC/DC split core current sensors, the CT500SA and CT200SA. Designed specifically for space-constrained environments, such as in-vehicle xEV testing, they offer accurate current measurements for the 200 A and 500 A ranges. The sensors are compatible with both power analyzers and waveform measurement instruments. The main sensor unit of both devices measures 110 mm width × 62 mm height × 25 mm depth. Each features a single unlock-and-open button for one-handed clamp-on installation, while the body includes both an M4 screw hole and a cable tie slot to secure the sensor in place. The CT500SA and CT200SA guarantee accuracy of ±0.1 % from -40 °C to 85 °C. Within 23±5 °C range this improves further still, achieving a peak accuracy of ±0.09 % of reading +0.01 % of full scale. Both models guarantee accuracy “one order of magnitude higher than that of conventional current sensors”, equivalent to through-hole types but with the convenience of clamp-on installation. Available frequency bandwidths differ between the two models. The CT500SA delivers a bandwidth of 500 kHz (−3 dB), while the CT200SA extends to 1 MHz (−3 dB). The CT200SA and CT500SA can also measure switching frequencies, used for motor inverter validation and requiring wideband measurement. Both models hold a phase accuracy of ±0.1° (0.1 Hz ≤ f ≤ 1 kHz). Major Target Markets are EV/xEV, Automotive, Renewable energy: Photovoltaic (PV) / solar and HVAC. | 19.08.2026 11:30:00 | Aug | news_2026-09-01_13.jpg | \images\news_2026-09-01_13.jpg | https://tmi.yokogawa.com/news/press-releases/2026/yokogawa-test-measurement-to-release-ct500sa-and-ct200sa-acdc-split-core-current-sensors/ | tmi.yokogawa.com |
| Radiation-Hard Power GaN FETs for Space Computing | EPC Space announced three eGaN® power transis... | 13959 | Product Release | Radiation-Hard Power GaN FETs for Space Computing | EPC Space announced three eGaN® power transistors in plastic surface-mount packages, designed to deliver high-performance power conversion for next-generation space computing systems. The EPC7050PCSH, EPC7066PCSH and EPC7065PCSH combine ultra-low on-resistance, high current capability and fast switching performance in compact PQFN packages with backside thermal pads. All three offer exceptional radiation immunity: TID > 1 Mrad, SEE LET(Si) 85 MeV cm²/mg, and neutron > 4E15 n/cm². The EPC7050PCSH is a 15 V device with 101 A continuous current capability and typical R<sub>DS(on)</sub> of 0.28 mΩ. The EPC7066PCSH is rated at 25 V and 101 A, with typical R<sub>DS(on)</sub> of 0.37 mΩ, while the EPC7065PCSH provides a 40 V rating, 101 A continuous current capability and typical R<sub>DS(on)</sub> of 0.5 mΩ. All three products are designed for synchronous rectifier applications on the secondary side of intermediate bus converters with output in the range of 5 V – 12 V, delivering an R<sub>DS(on)</sub> × Q<sub>G</sub> figure of merit to enable higher-frequency and higher-efficiency operation. The devices also target point-of-load buck converters/IVRs supplying 0.8 V core voltage for the processor. | 18.08.2026 09:30:00 | Aug | news_2026-09-15_12.jpg | \images\news_2026-09-15_12.jpg | https://epc.space/2026/08/epc-space-introduces-radiation-hard-egan-fets-for-next-generation-space-computing/ | epc.space |
| Pressureless Ag Semi-Sintering TIM suited for 3D Power Modules | Sumitomo Bakelite has developed a high-power-densi... | 13940 | Product Release | Pressureless Ag Semi-Sintering TIM suited for 3D Power Modules | Sumitomo Bakelite has developed a high-power-density 3D SiC-MOSFET power module with a resin-insulated dual-layer structure through joint research with Tohoku University. By optimizing the thermal expansion characteristics and elastic modulus of the resin insulated substrate and epoxy molding compound, Sumitomo Bakelite significantly reduced module warpage. In addition, the adoption of an Ag semi-sintering bonding material improved bonding reliability with the heat sink. By replacing conventional ceramic insulated substrates with resin-insulated substrates, the mismatch in the coefficients of thermal expansion between the substrate and copper is significantly reduced, suppressing power module warpage to 20 μm or less. The use of resin-insulated substrates suppresses module warpage caused by differences in thermal expansion between substrate materials. This enables a thinner Thermal Interface Material (TIM) layer between the module and the heat sink, significantly reducing thermal resistance while ensuring highly reliable bonding to the heat sink and significantly improving mountability. Ag semi-sintering TIM enables low-temperature, pressureless bonding, unlike conventional soldering and sintered-silver bonding processes that require high temperatures and high pressure, thereby reducing the thermal stress applied to the module. In addition, its high adhesion and low elastic modulus enable a bond-line thickness of less than 100 μm while significantly improving the reliability and durability of the bonding layer between the module and the heat sink. Compared with industry-standard solutions, this technology is said to make it possible to reduce the volume of power units by approximately 50 %. | 18.08.2026 08:30:00 | Aug | news_2026-09-01_10.png | \images\news_2026-09-01_10.png | https://www.sumibe.co.jp/english/topics/2026/it-materials/0804_01/index.html | sumibe.co.jp |
| 2027 IEEE Electronic Components and Technology Conference: Call for Papers | The 2027 IEEE Electronic Components and Technology... | 13955 | Event News | 2027 IEEE Electronic Components and Technology Conference: Call for Papers | The 2027 IEEE Electronic Components and Technology Conference (ECTC), the technical conference and product exhibition for the world’s semiconductor packaging industry, has announced a Call for Papers. ECTC 2027 will take place June 1-4, 2027 at the Gaylord Rockies Resort & Convention Center in Denver, CO/USA. More than 2,500 scientists, engineers and businesspeople from around the world are expected to attend. The deadline for abstract submissions is October 5, 2026. The ECTC 2027 technical program will address the latest developments, trends and applications in a range of advanced packaging topics, including components, materials, assembly, reliability, modeling, interconnect design and technology, device and system packaging, heterogeneous integration, chiplet architectures, hybrid bonding, wafer-level packaging (WLP) and panel-level packaging (PLP), fan-out and fan-in packaging, flip-chip technologies, integrated photonics and optoelectronics, LEDs, 5G, quantum computing and systems, and other emerging technologies in electronics packaging. Previously unpublished, non-commercial paper abstracts are requested in areas like Applied Reliability, Assembly and Manufacturing Technology, Electrical Design and Analysis, Emerging Technologies, Interconnections, RF, High-Speed Components & Systems, Materials & Processing, Packaging Technologies, Photonics and Thermal/Mechanical Simulation & Characterization. | 17.08.2026 13:00:00 | Aug | news_2026-09-15_8.jpg | \images\news_2026-09-15_8.jpg | https://ectc.net/ | ectc.net |
| Metallized Polypropylene Film Capacitors for Industrial and Automotive Applications | Panasonic Industry Europe released the ECWFJ serie... | 13944 | Product Release | Metallized Polypropylene Film Capacitors for Industrial and Automotive Applications | Panasonic Industry Europe released the ECWFJ series of metallized polypropylene film capacitors. The series is aimed at engineers working across industrial and automotive power electronics (it is qualified to AEC-Q200 standards) who require dependable performance under demanding environmental conditions. The ECWFJ series demonstrates resistance to moisture, maintaining stable operation under conditions of 40 °C and 95 % relative humidity for up to 1.000 hours. Typical application areas include electric mobility systems such as DC/DC converters, on-board chargers and e-compressors, along with solar inverters and EV charging infrastructure. The series is also designed for use in industrial power supplies, LED lighting, smart meters and embedded power systems, where consistent electrical performance and durability are essential. Technically, the ECWFJ series covers DC voltage ratings from 600 V up to 1.100 V. Capacitance values range from 1 μF up to 12 μF. The capacitors operate across a temperature range from -40 °C up to +110 °C, with the 1.000 V variant rated up to 105 °C. The devices are engineered to withstand thermal shock from -55 °C up to 85 °C over 1.000 cycles and can tolerate maximum ambient temperatures of up to 125 °C for limited durations. Panasonic’s proprietary patterned metallization with an integrated fuse mechanism helps ensure stable capacitance over the lifetime of the component and enhances overall system reliability. The design is complemented by a flame-retardant plastic enclosure and non-conductive resin, supporting compliance with UL and other regulatory standards. In addition, the capacitors are fully compliant with RoHS requirements. | 17.08.2026 12:30:00 | Aug | news_2026-09-01_14.jpg | \images\news_2026-09-01_14.jpg | https://industry.panasonic.eu/company/newsroom/film-capacitor-cost-effective-ECWJF | industry.panasonic.eu |
| Acquisition of High-Voltage Product Line | Dean Technology (DTI) and HVP High Voltage Product... | 13934 | Industry News | Acquisition of High-Voltage Product Line | Dean Technology (DTI) and HVP High Voltage Products of Munich, Germany, have announced an addition to their catalog of products. DTI and HVP have jointly acquired the high voltage measurement and driver businesses of North Star High Voltage (NSHV), a manufacturer of high voltage probes. NSHV has developed and defined high voltage measurement for the last 24 years. Their high voltage probes are designed to provide high accuracy while providing wide bandwidth capability, rugged packaging, and overall convenience. Two main types of probes are available – the PVM series designed for portability, and the VD series optimized for long life and accuracy. Both types of probes can be used with 1 MΩ input oscilloscopes standard, or with meters of various input impedances. | 17.08.2026 09:00:00 | Aug | news_2026-09-01_4.png | \images\news_2026-09-01_4.png | https://www.deantechnology.com/dti-hvp-acquires-new-high-voltage-product-line/ | deantechnology.com |
| Digital Isolators in Quad-Channel Configuration | Toshiba Electronics Europe has expanded its DCL34x... | 13942 | Product Release | Digital Isolators in Quad-Channel Configuration | Toshiba Electronics Europe has expanded its DCL34xx0B series of standard digital isolators with four quad-channel devices for industrial automation equipment. These devices achieve a typical current consumption of 0.2 mA per channel while supporting data rates of up to 25 Mbit/s. Applications include programmable logic controllers (PLCs), I/O interfaces, sensors, actuators, motor drives, inverters and switching power supplies. The DCL34xx0B series operates from supply voltages of 2.25 V to 5.5 V and provides a minimum isolation voltage of 3000 V<sub>rms</sub>. Housed in a SSOP16 package, the devices support operation across a temperature range of -40 °C to +125 °C. Using Toshiba’s magnetic-coupling isolation technology, these devices provide isolated signal transmission with a common-mode transient immunity (CMTI) of 30 kV/μs (min). The additions comprise the DCL340L0B and DCL340H0B with four forward channels and zero reverse channels (4:0), and the DCL342L0B and DCL342H0B with two forward channels and two reverse channels (2:2). | 13.08.2026 10:30:00 | Aug | news_2026-09-01_12.jpg | \images\news_2026-09-01_12.jpg | https://toshiba.semicon-storage.com/eu/company/news/2026/08/isolators-solid-state-relays-20260813-1.html | toshiba.semicon-storage.com |
| Single and Three Phase Common Mode HEMP Power Line Filters | The EMC solutions provider EMIS offers a range of ... | 13962 | Product Release | Single and Three Phase Common Mode HEMP Power Line Filters | The EMC solutions provider EMIS offers a range of EMI powerline filters designed to protect sensitive electrical and electronic equipment against High-Altitude Electromagnetic Pulse (HEMP) and conducted Electromagnetic Interference (EMI/RFI) resulting from high-energy electromagnetic events, including nuclear-induced electromagnetic disturbances and lightning-related transients. EMIS SMF913 and TMF913HEMP EMI Power Line Filters provide single phase and three phase configurations, and suitable for AC and DC facility power applications. With current ratings from 6 to 3000 A, they are able to support applications ranging from control panels and communication equipment to high-current facility power distribution systems. The EMIS HEMP filter design features Integrated 80 kA peak surge-current protection (8/20 μs) which provides protection against lightning-induced surges and power switching transients. Standard Performance models provide 100 dB insertion loss from 30 MHz to 18 GHz, followed by 90 dB attenuation up to 40 GHz. Extended-performance models provide 100 dB attenuation from 14 kHz to 40 GHz, offering enhanced protection against both low-frequency conducted interference and high-frequency electromagnetic disturbances. Built-in discharge resistors safely dissipate energy stored in internal capacitors after power is switched off, improving operator safety and reducing maintenance hazards. The EMIS HEMP filters are designed in accordance with the requirements of MIL-STD-188-125-1/2 and MIL-PRF-15733J, supporting HEMP-hardened facility and high-performance EMI/RFI protection applications and tested in accordance with MIL-STD-188-125-1/2 to withstand specified E1 Short Pulse and E2 Intermediate Pulse current injection levels under common-mode and line-to-ground conditions, with E1 residual current limited to ≤10 A and no damage to the filter during E2 testing. | 12.08.2026 12:30:00 | Aug | news_2026-09-15_15.jpg | \images\news_2026-09-15_15.jpg | https://emisglobal.com/product-category/military-grade-filters/ | emisglobal.com |
| Silicone-free Thermal Conductive Paste | To compensate for even the smallest air pockets be... | 13945 | Product Release | Silicone-free Thermal Conductive Paste | To compensate for even the smallest air pockets between the contact pairs, Fischer Elektronik is expanding its product range of thermal interface materials to include a high-performance, silicone- and solvent-free thermal conductive paste. This thermal paste, with the product code WLPF 36 035, has a thermal conductivity of 3.6 W/m•K and is CRM-free; it is therefore not subject to any additional training requirements. The paste contains no metallic fillers, is electrically insulating and is claimed to offer high long-term stability with good creep properties. The WLPF 36 035 thermal grease can be used within a temperature range of -60 °C to +100 °C and is supplied in a 35 g tin. Other types and sizes of packaging can be produced to customer specifications on request. | 11.08.2026 13:30:00 | Aug | news_2026-09-01_15.jpg | \images\news_2026-09-01_15.jpg | https://www.fischerelektronik.de/en/latest-news/news/2026-fischer-pressemitteilungen/new-silicone-freehigh-performance-thermal-conductive-paste/ | fischerelektronik.de |
| Manufacturing Facility in Guadalajara, Mexico, opened | Indium Corporation has opened a manufacturing faci... | 13935 | Industry News | Manufacturing Facility in Guadalajara, Mexico, opened | Indium Corporation has opened a manufacturing facility in Guadalajara, Mexico. This 1,230-square-meter facility will manufacture solder paste, cored wire, and wave flux products to support customers throughout the Americas and global markets. Production will initially focus on Indium Corporation’s best-selling paste series Indium8.9HF and Indium10.8HF. This marks the first phase of the company’s long-term manufacturing investment in Mexico, with more capabilities planned as the facility grows to meet customer demand. At full capacity, the Guadalajara facility is expected to produce approximately 18–20 metric tons of solder paste per month. In addition to manufacturing and operational roles, the site will house customer service and technical support teams. | 11.08.2026 10:00:00 | Aug | news_2026-09-01_5.jpg | \images\news_2026-09-01_5.jpg | https://www.indium.com/press-releases/indium-corporation-opens-new-manufacturing-facility-in-guadalajara-mexico-expanding-global-production-network/ | indium.com |
| TVS Diodes for simplified ISO 7637 Load-Dump Protection | Littelfuse announced the TPSMD-FL Series FlatSuppr... | 13941 | Product Release | TVS Diodes for simplified ISO 7637 Load-Dump Protection | Littelfuse announced the TPSMD-FL Series FlatSuppressX™ TVS Diodes, a family of automotive-grade transient voltage suppression devices designed to simplify ISO 7637-2 Pulse 5b load-dump protection for 12 V vehicle electronics. Unlike conventional TVS diodes that can allow transient voltages to rise to levels requiring additional protection circuitry, the TPSMD-FL Series leverages proprietary FlatSuppressX™ technology to maintain a low, flat, and stable clamping voltage profile during high-energy transient events. This enables designers to meet demanding automotive load-dump requirements with lower clamping fewer external components, reducing design complexity and PCB space requirements. Rated for 3000 W peak pulse power dissipation and housed in a compact surface-mount DO-214AB package, the TPSMD-FL Series is optimized to protect sensitive automotive electronics from high-energy surges. The devices are AEC-Q101 qualified and designed specifically for applications requiring compliance with ISO 7637-2 Pulse 5b load-dump standards. They provide IEC 61000-4-2 ESD protection up to 30 kV air and contact discharge. The TPSMD-FL Series is suited for automotive applications operating on 12 V power rails. | 11.08.2026 09:30:00 | Aug | news_2026-09-01_11.jpg | \images\news_2026-09-01_11.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-launches-tpsmd-fl-tvs-diodes-for-simplified-iso-7637-load-dump-protection | littelfuse.com |
| Quad-Channel Digital Isolators for High-Temperature Applications | Toshiba Electronics Europe has expanded its standa... | 13927 | Product Release | Quad-Channel Digital Isolators for High-Temperature Applications | Toshiba Electronics Europe has expanded its standard digital isolator line-up with the DCL54xx01A series, comprising ten quad-channel devices that support data rates of up to 150 Mbps and operate at temperatures up to 125 °C. Target industrial automation applications include programmable logic controllers (PLCs), I/O interfaces, motor control, inverters and switching power supplies. The DCL54xx01A series operates from 2.25 V to 5.5 V and provides an isolation voltage of 5000 V<sub>rms</sub> for one minute. Typical propagation delay is 10.9 ns, while typical pulse-width distortion is 0.8 ns. The devices are housed in an SOIC16-W package and operate from -40 °C to +125 °C, making them suitable for industrial systems in high-temperature environments. The series is available in 4:0, 3:1 and 2:2 forward/reverse channel-direction configurations. Devices are also available with different default output states and enable-control options. | 06.08.2026 12:30:00 | Aug | news_2026-08-15_12.jpg | \images\news_2026-08-15_12.jpg | https://toshiba.semicon-storage.com/eu/company/news/2026/08/isolators-solid-state-relays-20260806-1.html | toshiba.semicon-storage.com |