Download my current issue here: October 2026

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PageArticle
14600V Super Junction MOSFETs Combine Top-Side Cooling with High Power Density
16The Material Challenge Behind Higher Power Density
18Building a Traction Inverter Around a Low-Inductance SiC Card
24100 V GaN Transistor for Artificial Intelligence, Industrial, and Motor-Drive Applications
28Embedded Power Modules: Digital-Twin-Based Development for the Next Generation of SiC Inverters
32Optimal Cooling Element Geometry
36Scalable SiC Traction Inverter Architecture for Next-Gen xEV Platforms Through Advanced Power Module and Busbar Co-Design
42Research on Smart Distribution Transformers and Integrated Communication Applications
46Accelerating market entry with power supplies independently certified to 61010-1
4848V Factorized Power Architecture Slashes Thermal Losses and Outperforms Multiphase Approach when Powering AI
50Beyond Fast Fault Detection: The Future of Current Sensing for AI Data Center SSCBs
54Switched-Capacitor Converters – Is the Lifetime of an MLCC a Concern?


Editorial
 SiC and GaN: What Are the Questions?

SiC and GaN are no longer technologies waiting for their big breakthrough. They are part of the power electronics landscape, and engineers are using them in increasingly demanding applications. But that doesn't mean the discussion is over. Quite the opposite! The questions are simply changing, with new ones emerging during the ongoing adoption of Wide Bandgap technology. Where does SiC make the most sense? Where does GaN have the real advantage? How much further can we push switching frequency? What about cost, reliability, packaging and thermal management? And perhaps most importantly: what are the engineers actually asking for?

Our goal is to provide a platform for the engineering community, for discussion and exchange. It is not possible to answer these questions simply in an article, presentation or a press release. Sometimes you need several key industry people around a table, with different experiences and different opinions, and let them talk. That is what we have planned in Munich at our WBG Event: www.bodoswbg.com.

On December 1, we will open this year's Bodo's Wide Bandgap Event with a 90-minute roundtable bringing together experts from the SiC and GaN communities, including users of both technologies. No presentations, no script. Just an open discussion about where Wide Bandgap is heading and what still needs to be solved. Afterwards, we will host what everybody looks forward to: the get-together for first-class networking. Trust me, you ll meet the right people here.

For in-depth information, the second day, December 2, will once again provide parallel tracks on SiC and GaN. Together with the tabletop exhibition, this setup has proven to be just the right format for our guests. Taken from the feedback we have received over the last years.

Tickets will be on sale from October 15, and we will of course have an Early Bird opportunity again. And best of all, despite the increasing cost EVERYWHERE, we have been able to keep the prices exactly the same as last year. A small gesture to say Thank You to our supporters!

For more than 20 years Bodo s magazine has been delivered by post to all places in the world. It is the only magazine that spreads technical information on power electronics globally. We have EETech as a partner serving our clients in North America. And don’t miss our Chinese version at bodospowerchina.com. An archive of every issue of the magazine is available for free at our website bodospower.com.

My Green Power Tip for the Month:
Consider efficiency during the early design stage of your products. And, we all know that improvements can be made in the lab as well. Climate chambers, test benches, thermal testing - just a few of the opportunities to save energy without compromising on the quality of your work.

Kind regards,
Holger