| More News | Teaser | NewsID | NewsSection | Title | Text | Announced | AnnouncedMMM | Picture | PicturePath | WebLink | WebLinkText |
| Faster Development Processes for DC Charging Stations | The charging controller developer Vector Informati... | 12024 | Industry News | Faster Development Processes for DC Charging Stations | The charging controller developer Vector Informatik and AST International are now offering a joint solution for the development of DC charging stations. The compatibility of the communication protocols of the Vector charging controller vSECC and the AST DC meter is ensured, which enables charging station manufacturers to offer a convenient plug-and-play solution. This shortens development times and enables complete integration. Vector's vSECC controllers control the charging communication between electric vehicles, charging station components and backend systems and support common charging standards such as CCS, NACS, CHAdeMO and MCS. The AST DC Meters provide continuous precise measurements for fast charging stations, megawatt charging systems and DC wallboxes. They are certified according to German, European and North American calibration law requirements. | 09.07.2024 14:00:00 | Jul | news_2024-07-15_9.jpg | \images\news_2024-07-15_9.jpg | https://www.ast-international.com/en.news.faster-development-processes-for-dc-charging-stations-thanks-to-partnership-between-vector-informatik-and-ast-international.html | ast-international.com |
| New Building for more SiC Wafer Production Space | In an important step towards strengthening the sem... | 12018 | Industry News | New Building for more SiC Wafer Production Space | In an important step towards strengthening the semiconductor industry and promoting sustainable technologies, SiCrystal will create additional production space in the north-east of Nuremberg, directly opposite the existing site. The new building will offer an additional 6,000 square meters of production space and will be equipped with state-of-the-art technology to further optimize the production of silicon carbide wafers. The close proximity to the existing plant will ensure close integration of the production processes. SiCrystal's total production capacity, including the existing building, will be approximately three times higher in 2027 than in 2024. "This groundbreaking ceremony marks an important milestone for SiCrystal and underlines our commitment to the metropolitan region. In this way, we can continue to supply innovative products of the highest quality for our customers in the future and make a positive contribution to global sustainability. ", said Dr. Erwin Schmitt, COO of SiCrystal. "With the additional production capacities, we will strengthen our market position and make an important contribution to technological development in the semiconductor industry." | 04.07.2024 08:00:00 | Jul | news_2024-07-15_3.jpg | \images\news_2024-07-15_3.jpg | https://www.sicrystal.de/index.php/de/news | sicrystal.de |
| Experts for WBG-Testing Acquired | After receiving approval from the British and Ital... | 12020 | Industry News | Experts for WBG-Testing Acquired | After receiving approval from the British and Italian governments, Microtest Group announces the acquisition of ipTEST. ipTEST specializes in testing silicon carbide and gallium nitride semiconductors, with locations in Guildford (UK) and Ipoh (Malaysia) and reported €22 million in revenue in 2023. This transaction marks the fourth acquisition for the Group in just over a year - following the 2023 acquisitions of the Dutch company Test Inspire, the German company RoodMicrotec and the Italian company GEDEC. This move is part of the growth and international development strategy launched in 2022 with the support of Xenon Private Equity, aiming to make Microtest the European reference point for chip design (ASIC), test systems and in the testing of microchips on package and silicon wafers. From an industrial perspective, integrating ipTEST will bring significant expertise in innovative device development, such as the new DS5, which won the prestigious King's Award for Enterprise in 2023 and 2024 for silicon carbide and gallium nitride semiconductor testing. These frontier semiconductors are crucial for managing electric vehicle batteries and inverters, with expected growth of over 30% annually in the next five years due to the ongoing energy transition. This acquisition will enable Microtest to serve power microchip manufacturers making substantial investments to meet new sector demands, including the main IDM’s in the industry ST Microelectronics, Infineon and Wolfspeed. | 03.07.2024 10:00:00 | Jul | news_2024-07-15_5.jpg | \images\news_2024-07-15_5.jpg | https://www.microtest.net/microtest-group-acquires-iptest/ | microtest.net |
| Technology Acquisition Expands Power Management Solutions | GlobalFoundries announced that it has acquired Tag... | 12017 | Industry News | Technology Acquisition Expands Power Management Solutions | GlobalFoundries announced that it has acquired Tagore Technology’s proprietary and production proven Power Gallium Nitride (GaN) IP portfolio, a high-power density solution designed to push the boundaries of efficiency and performance in a wide range of power applications in automotive, internet of things (IoT) and artificial intelligence (AI) datacenter. As the digital world continues to evolve with technologies like Generative AI, GaN stands out as a pivotal solution for sustainable and efficient power management particularly in datacenters. The announcement reinforces GF’s commitment to large-scale manufacturing of GaN technology that offers a suite of benefits to help datacenters meet the increasing power demands while maintaining or improving power efficiency, reducing costs and managing heat generation. The acquisition expands GF’s power IP portfolio and broadens access to GaN IP that will enable GF customers to quickly bring differentiated products to market. As a part of the acquisition, a team of experienced engineers from Tagore, dedicated to the development of GaN technology, will be joining GF. “We are committed to being the foundation of our customers’ power applications today and for decades to come,” said Niels Anderskouv, chief business officer at GF. “With this acquisition, GF takes another step toward accelerating the availability of GaN and empowering our customers to build the next generation of power management solutions that will reshape the future of mobility, connectivity and intelligence.” | 01.07.2024 07:00:00 | Jul | news_2024-07-15_2.jpg | \images\news_2024-07-15_2.jpg | https://gf.com/gf-press-release/globalfoundries-acquires-tagore-technologys-gan-technology-to-accelerate-disruptive-powermanagement-solutions/ | gf.com |
| Charity Benefit from PCIM Booth for Education in Ecuador | Vincotech staged a charity benefit at the PCIM Eur... | 11986 | Industry News | Charity Benefit from PCIM Booth for Education in Ecuador | Vincotech staged a charity benefit at the PCIM Europe trade fair to raise funds for the NGO Plan International Germany. Visitors rose to this virtual reality (VR) challenge. Vincotech and its partners rewarded their efforts by donating €15,000 to a project to support young Ecuadorians. Vincotech has a history of hosting charity events at PCIM Europe. Ranging from wall climbing to Sudoku, these activities have been a big hit with fairgoers. This year’s event – a VR flight over mountainous terrain – was yet another audience magnet. Hundreds of PCIM Europe visitors (including a Bodo’s Power System editor) took up the challenge, with Vincotech matching all pledges to raise €15,000 for a Plan International Germany project in Ecuador. The money goes to support youngsters, especially girls, in ten communities each in the Cotopaxi and Santa Elena regions. It funds projects to convey entrepreneurial, digital, and soft skills that will help them get off to a better start in professional life, as well as health services for mothers and children. This project, which involves 2,000 individuals directly and indirectly benefits nearly 6,000 community members, is a certainly a winning proposition young Ecuadorians in the region. Plan International is an independent organization, with no religious, political or governmental affiliations, standing up for children’s rights worldwide and striving to be open, accountable and honest in what the NGO does. | 27.06.2024 16:00:00 | Jun | news_2024-07-01_10.jpg | \images\news_2024-07-01_10.jpg | https://www.vincotech.com/news/company-news/article/vincotechs-pcim-booth-raises-eur15000-for-project.html | vincotech.com |
| Connecting Engineers to the Future of EV/HEV Technology | Mouser Electronics explores the latest development... | 12023 | Industry News | Connecting Engineers to the Future of EV/HEV Technology | Mouser Electronics explores the latest developments, advancements and challenges in electric and hybrid vehicle technology through its EV/HEV resource hub. Staying ahead in this rapidly evolving industry is crucial for engineers and innovators. With advancing technologies like bi-directional charging and vehicle autonomy entering the market, it's more important than ever to stay up to speed. Mouser's EV/HEV resource hub offers a wealth of engaging content, including eBooks, blogs, articles, products, and more, all designed to keep engineers at the forefront of these technological advancements. Electric infrastructure is advancing with the use of emerging technologies, such as liquid-cooled HPC connectors, while still maintaining the latest industry standards and lowering maintenance costs. This development empowers the future of eMobility, as discussed in Mouser's interactive content series <i>“Electrifying the Future of eMobility”</i>, exploring how current renewable energy sources and evolving technologies like hydrogen electrolysis are driving toward a net-zero future. The EV/HEV technology content hub offers engineers access to resources from Mouser's technical team and leading manufacturers. In a recent eBook with TE Connectivity, <i>“EV and Connected Transportation”</i>, industry experts explain the tandem movement of e-mobility and connected travel via new standards and the use of the V2X ecosystem to make more efficient, accurate, and safer roads for vehicles. | 27.06.2024 13:00:00 | Jun | news_2024-07-15_8.jpg | \images\news_2024-07-15_8.jpg | https://eu.mouser.com/newsroom/publicrelations-application-resource-ev-hev-2024final/ | mouser.com |
| electronica 2024: Answers to the major Challenges facing the Automotive Industry | From connected mobility to autonomous driving or s... | 12019 | Event News | electronica 2024: Answers to the major Challenges facing the Automotive Industry | From connected mobility to autonomous driving or sustainability – the automotive industry is facing major challenges on its path to digitalization and electrification. The most important companies in the electronics industry will network with the automotive industry and shape the future at the international platform electronica 2024 from November 12 to 15, 2024 in Munich. Despite the discontinuation of subsidies and the lack of infrastructure in some areas, the future belongs to electric drives, and electrification is progressing around the world in all vehicle classes. The software, battery and electronics industries play key roles here. When it comes to batteries, future technologies such as solid-state batteries with a higher energy density will set new standards in terms of charging time, range, fire safety and cost efficiency. In addition, electronica 2024 will focus primarily on the electronic components, technologies and solutions required for the mobility transition. Silicon carbide (SiC) and gallium nitride (GaN) semiconductors with a wide bandgap, for example, are being used more and more in electric drives due to their high efficiency level and energy efficiency, and they are becoming even more powerful. There is a further increase in the switching frequency in inverters, which boosts driving comfort and energy efficiency. | 26.06.2024 09:00:00 | Jun | news_2024-07-15_4.jpg | \images\news_2024-07-15_4.jpg | https://electronica.de/en/trade-fair/journalists/press-releases/detail/answers-to-the-major-challenges-facing-the-automotive-industry.html | electronica.de |
| Call for Industry Session Proposals and for Plenary Session Topics and Speakers | APEC 2025, to be held next year in Atlanta, Georgi... | 12016 | Event News | Call for Industry Session Proposals and for Plenary Session Topics and Speakers | APEC 2025, to be held next year in Atlanta, Georgia, March 16-20, announces the call for submission of proposals for the conference’s popular Industry Session series. The Industry Session component of the conference is intended to encourage content from industry practitioners. Industry Session (IS) speakers are invited to make a presentation only, avoiding the formality of writing the papers for IEEE Xplore publication. IS tracks run in parallel with APEC Technical Sessions and the presentations are included for download by paid APEC attendees. The deadline for submission of proposals is August 23rd. Industry Session proposals may be submitted for an individual speaker presentation or for an overall session proposal. The total time allowed for each presentation is 25 minutes, including 5 minutes for Q and A. To submit a proposal for an Industry Session at APEC, presenters should prepare a 2-3-page proposal that provides a summary of the presentation content and a description of the target audience. Also, a short professional biography of the speaker should be included. If proposing for a full session, a proposal for each of the individual presentations must be submitted. Presentations should have strong technical content and commercial references should be limited and only in support of the core content. | 26.06.2024 06:00:00 | Jun | news_2024-06-01_2.jpg | \images\news_2024-06-01_2.jpg | https://apec-conf.org/speakers/is-presenter-info/ | apec-conf.org |
| Collaboration between Semiconductor Manufacturer and Power Supply Provider | Texas Instruments (TI) announced a long-term colla... | 11980 | Industry News | Collaboration between Semiconductor Manufacturer and Power Supply Provider | Texas Instruments (TI) announced a long-term collaboration with Delta Electronics, a global power and energy management manufacturer, to create next-generation electric vehicle (EV) onboard charging and power solutions. This work will leverage both companies’ research and development capabilities in power management and power delivery in a joint innovation laboratory in Pingzhen, Taiwan. Together, TI and Delta aim to optimize power density, performance and size to accelerate the realization of safer, faster-charging and more affordable EVs. Phase one for the collaboration focuses on Delta’s development of a lighter-weight, cost-effective 11 kW onboard charger, using TI’s latest C2000™ real-time microcontrollers and TI’s active EMI filter products. The companies are working together using TI’s products to reduce the charger’s size by 30% while achieving up to 95% power conversion efficiency. In phase two, TI and Delta will leverage the latest C2000 real-time MCUs for automotive applications to enable automakers to achieve automotive safety integrity levels (ASILs) up to ASIL D, which represents the strictest automotive safety requirements. Highly integrated automotive isolated gate drivers will further enhance the power density of onboard chargers, while also minimizing overall solution size. In phase three, the two companies will collaborate to develop the next generation of automotive power solutions by using GaN technology. | 21.06.2024 10:00:00 | Jun | news_2024-07-01_4.jpg | \images\news_2024-07-01_4.jpg | https://news.ti.com/2024-06-21-Texas-Instruments-and-Delta-Electronics-announce-collaboration-to-advance-electric-vehicle-onboard-charging | ti.com |
| Acquisition of GaN Manufacturer completed | Renesas Electronics has completed the acquisition ... | 11982 | Industry News | Acquisition of GaN Manufacturer completed | Renesas Electronics has completed the acquisition of Transphorm, a company which concentrates its activities on GaN power semiconductors, as of June 20, 2024. With the closing of the acquisition now completed, Renesas will immediately start offering GaN-based power products and related reference designs to meet the rising demand for wide bandgap semiconductor products. Investing in the power business is an important part of Renesas’ strategy for achieving sustainable, long-term growth. Other recent moves that Renesas has made to bolster this market segment include: the opening of the Kofu Factory, a dedicated 300-mm wafer fab for power products; ramping up a new SiC production line at the Takasaki Factory; and forging an agreement with Wolfspeed to secure a steady supply of SiC wafers over the next 10 years. With GaN technology now part of Renesas’ portfolio, Renesas is poised to offer more comprehensive power solutions to support the evolving needs of customers across a broad range of applications. On the same day that it completed the acquisition of Transphorm, Renesas rolled out 15 market-ready reference designs that combine the new GaN products with Renesas’ embedded processing, power, connectivity and analog portfolios. These include the designs of Transphorm’s automotive-grade GaN technology integrated for on-board battery chargers as well as 3-in-1 powertrain solutions for EVs. Transphorm was founded in 2007 in Goleta, California. | 20.06.2024 12:00:00 | Jun | news_2024-07-01_6.jpg | \images\news_2024-07-01_6.jpg | https://www.renesas.com/us/en/about/press-room/renesas-completes-acquisition-transphorm | renesas.com |
| 700 V GaN Power Transistors | Infineon introduces the CoolGaN™ Transistor ... | 12030 | Product Release | 700 V GaN Power Transistors | Infineon introduces the CoolGaN™ Transistor 700 V G4 product family. The devices are intended for power conversion in the voltage range up to 700 V. In contrast to other GaN products on the market, the input and output figures-of-merit of these transistors are claimed to “provide a 20 percent better performance, resulting in increased efficiency, reduced power losses, and more cost-effective solutions”. The combination of electrical characteristics and packaging allows the usage in applications such as consumer chargers and notebook adapters, data center power supplies, renewable energy inverters, and battery storage. The product series comprises 13 devices with a voltage rating of 700 V and on-resistance range from 20 mΩ to 315 mΩ. The increased granularity in device specification, combined with several industry standard package options including PDFN, TOLL and TOLT allow R <sub>DS</sub> resistance and packages to be selected according to application requirements. The devices are “characterized by a fast turn-on and turn-off speed and minimal switching losses”. The on-resistance range enables power systems from 20 W to 25,000 W. In addition, the 700 V E-mode with the industry's highest transient voltage of 850 V increases the reliability of the overall system as it offers greater robustness against anomalies in the user environment such as voltage peaks. | 20.06.2024 11:30:00 | Jun | news_2024-07-15_15.jpg | \images\news_2024-07-15_15.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFPSS202406-120.html | infineon.com |
| Distributor receives ISO 27001 Certification | DigiKey has added ISO 27001 certification to its d... | 11981 | Industry News | Distributor receives ISO 27001 Certification | DigiKey has added ISO 27001 certification to its data security program. With this certification, the company builds upon its commitment and ability to manage information securely and safely for its customers, suppliers and partners. ISO 27001 is the international industry standard for information security management systems. It assures customers, suppliers and employees of DigiKey's commitment to safeguarding information following industry best practices. In addition to ISO 27001 certification, DigiKey’s information security program offers customers and suppliers access to other robust tools such as multi-factor authentication (MFA) to protect accounts from fraud and unauthorized access. | 20.06.2024 11:00:00 | Jun | news_2024-07-01_5.jpg | \images\news_2024-07-01_5.jpg | https://www.digikey.com/en/news/press-releases/2024/june/digikey-receives-iso-27001-certification-adding-to-robust-information-security-program | digikey.com |
| Redundant analog TMR angle Sensor for safety-relevant Applications | TDK launched the tunnel-magnetoresistance (TMR) an... | 11991 | Product Release | Redundant analog TMR angle Sensor for safety-relevant Applications | TDK launched the tunnel-magnetoresistance (TMR) angle sensor TAS8240 sensor for automotive and industrial applications. It is available in both compact QFN16 (3 x 3 mm<sup>2</sup>) and TSSOP16 (5 x 6.4 mm<sup>2</sup>) packages, offering four redundant analog single-ended SIN/COS outputs. TAS8240 is a redundant TMR-based sensor consisting of 4 x Wheatstone bridges for angle detection at an angle accuracy of ±1.0° in an ambient temperature range of -40 °C to +150 °C. As a 360° angle sensor, the TAS8240 is suited to accurately measure the rotor position of BLDC motors used in safety critical applications such as power steering, brake boosters, or traction motors. The sensor contains four pairs of TMR half bridges and provides four separated SIN/COS outputs by applied magnetic field in the x-y plane. Higher system safety levels up to ASIL D can be achieved while offering higher availability of position information, even in case of a failure of one of the output signals. Depending on system architectures, fail-operational concepts can also be supported by the new sensor. The angle accuracy of the sensor remains stable at different temperatures and over the sensor’s lifetime. It provides redundant rotor position measurement needed in safety-relevant applications like power steering motors. | 20.06.2024 10:30:00 | Jun | news_2024-07-01_15.jpg | \images\news_2024-07-01_15.jpg | https://www.tdk.com/en/news_center/press/20240620_01.html | tdk.com |
| APEC 2025 Announces Call for Technical Program Paper Digest Submissions | APEC 2025, to be held in Atlanta, Georgia, from Ma... | 11976 | Event News | APEC 2025 Announces Call for Technical Program Paper Digest Submissions | APEC 2025, to be held in Atlanta, Georgia, from March 16-20, 2025, continues the long-standing tradition of addressing issues of immediate and long-term interest to the practicing power electronics engineer. APEC is now accepting paper digest submissions for the Technical Program. Interested authors wishing to present a paper must submit a digest for consideration by August 2, 2024. Instructions for submissions are available at: https://apec-conf.org/speakers/ts-author-info/<br>Prospective authors of Technical Program papers are asked to submit a digest explaining the problem that will be addressed by the paper, its major results and how it is different from the closest existing literature. Technical Program Papers presented at APEC must be original material and not have been previously presented or published. The principal criteria used by reviewers in selecting digests for the program will be the usefulness of the work to the practicing power electronics professional. They also value evidence of completed experimental work. Authors should obtain any necessary company and governmental clearance prior to submission of digests. Authors will be notified of the decision of paper acceptance on September 26, 2023. Accepted papers in final form must be submitted and author registration completed by November 3, 2023. | 20.06.2024 06:00:00 | Jun | news_2024-06-01_2.jpg | \images\news_2024-06-01_2.jpg | https://apec-conf.org/speakers/ts-author-info/ | apec-conf.org |
| Modern Semiconductor Technology for the Automotive Industry | Vishay Siliconix Itzehoe celebrated the topping-ou... | 12035 | Industry News | Modern Semiconductor Technology for the Automotive Industry | Vishay Siliconix Itzehoe celebrated the topping-out ceremony for its new 300mm wafer fab, a significant milestone in the comprehensive expansion of the site. Representatives from business, politics and the workforce took part in this important event, which marks progress towards the completion and commissioning of the new production facility. Leif Henningsen, Managing Director of Vishay Siliconix Itzehoe GmbH, and Jeff Webster, Chief Operating Officer of Vishay Intertechnology, thanked all those involved in the construction and employees on behalf of the entire Vishay management for completing the shell of the building on schedule. Julia Carstens, State Secretary in the Schleswig-Holstein Ministry of Economic Affairs, and District Administrator Claudius Teske emphasized the great economic importance of the new factory for the region. It will create 150 new jobs and significantly strengthen the local economy. The heart of the new production facility is a 4,000 m<sup>2</sup> clean room, which is constantly operated at 22 degrees Celsius and 43% humidity. The fully digital factory is designed for the use of artificial intelligence and state-of-the-art automation technology. This ensures the consistently high quality for which Vishay is renowned. "We are building one of the most modern and efficient factories in the world in our technology segment," emphasizes Jeff Webster. The expansion is part of Vishay Intertechnology's global growth program. | 19.06.2024 16:30:00 | Jun | news_2024-07-15_20.jpg | \images\news_2024-07-15_20.jpg | https://www.vishay.com/ | vishay.com |
| Medium Voltage for Resource Efficiency in PV Plants | Enormous quantities of raw materials are required ... | 12021 | Industry News | Medium Voltage for Resource Efficiency in PV Plants | Enormous quantities of raw materials are required for the conversion of the energy system, for example, in the form of copper and aluminum cables to connect renewable generators to the grid. One promising approach to save raw materials is to move from the low to the medium-voltage level in renewable energy power plants. The Fraunhofer Institute for Solar Energy Systems ISE sees a huge potential for savings with higher system voltages, especially in large PV power plants. The institute is planning first pilot power plants with this technology and is aiming for a broad market launch together with industry. To kick-off its research topic "Medium Voltage – A Resource-Efficient Way to Interconnect", Fraunhofer ISE presented a medium-voltage PV string inverter and a medium-voltage battery inverter at the Smarter E trade fair in Munich. The move to medium voltage (MV) was first made possible by the development of high voltage silicon carbide (SiC) components with high switching speeds. SiC components up to 3.3 kV are now available on the market. In 2023, Fraunhofer ISE developed the world's first medium-voltage photovoltaic (MS-PV) string inverter in the "MS-LeiKra" project and successfully put it into operation on the grid. The two-stage inverter has an output voltage of 1,500 V<sub>AC</sub> at a power of 250 kVA. | 19.06.2024 11:00:00 | Jun | news_2024-07-15_6.jpg | \images\news_2024-07-15_6.jpg | https://www.ise.fraunhofer.de/en/press-media/press-releases/2024/fraunhofer-ise-goes-with-medium-voltage-for-resource-efficiency-in-pv-plants.html | ise.fraunhofer.de |
| SiC Manufacturing Facility planned to be built in Czech Republic | onsemi announced plans to establish a state-of-the... | 11978 | Industry News | SiC Manufacturing Facility planned to be built in Czech Republic | onsemi announced plans to establish a state-of-the-art, vertically integrated silicon carbide (SiC) manufacturing facility in the Czech Republic. The site would produce the company’s intelligent power semiconductors that are essential for improving the energy efficiency of applications in electric vehicles, renewable energy and AI data centers. onsemi’s plan to expand SiC manufacturing with a multi-year brownfield investment of up to $2 billion (44 billion CZK) is part of the company’s previously disclosed long-term capital expenditure target. This investment would build on the company’s current operations in the Czech Republic, which include silicon crystal growth, silicon and silicon carbide wafer manufacturing (polished and EPI) and a silicon wafer fab. Today, the site can produce more than three million wafers annually, including more than one billion power devices. Upon completion, the operation would contribute annually more than $270 million USD (6 billion CZK) to the country’s GDP. Pending all final regulatory and incentive approvals, this would be one of the largest private sector investments in the Czech Republic’s history and would further contribute to the prosperity and economic dynamism of the Zlín region. | 19.06.2024 08:00:00 | Jun | news_2024-07-01_2.jpg | \images\news_2024-07-01_2.jpg | https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-selects-the-czech-republic-to-establish-end-to-end-silicon-carbide-production-for-advanced-power-semiconductors | onsemi.com |
| Partnering in EMC Solutions for Aerospace, Defense and Medical Electronics | Anritsu Company has partnered with Y.I.C. Technolo... | 11983 | Industry News | Partnering in EMC Solutions for Aerospace, Defense and Medical Electronics | Anritsu Company has partnered with Y.I.C. Technologies to develop tools that support companies performing EMC pre-compliance measurements. Anritsu’s Field Master spectrum analyzers compliment the Y.I.C EMScanners and EMViewer application software to provide a fully integrated solution. Design engineers developing advanced electronics face increased EMC challenges from high-speed data circuits and RF components. Efficient design processes necessitate early insight into the EMC performance of the circuits. The Y.I.C scanners and EMViewer software coupled with Anritsu spectrum analyzers provide a 3D heat map of all radiated signals. Circuit layout and shielding materials can be optimized before submitting the product to a certified test house, maximizing the chances of a first-time pass and minimizing repeated submissions. | 18.06.2024 13:00:00 | Jun | news_2024-07-01_7.jpg | \images\news_2024-07-01_7.jpg | https://www.anritsu.com/en-gb/test-measurement/news/news-releases/2024/2024-00-18-gb01 | anritsu.com |
| Power Tradeshow in Shenzhen, China | PCIM Asia, the exhibition and conference for power... | 11979 | Event News | Power Tradeshow in Shenzhen, China | PCIM Asia, the exhibition and conference for power electronics, intelligent motion, renewable energy and energy management, will return to the Shenzhen World Exhibition and Convention Center from 28 – 30 August 2024. More than 80% of available booth space has already been reserved at the event’s 2024 edition, as exhibitors look to highlight their latest advancements across a wide range of market segments including e-mobility, clean energy and energy storage, wide-bandgap (WBG) devices and more. The event will facilitate industry discussion on these high-growth application areas through a series of themed forums, as well as through its industry-leading conference program. At PCIM Asia 2024, participants will find these trends and technologies explored across multiple channels, including on the exhibition floor, through a series of forums and at the PCIM Asia Conference. The event brings together industry stakeholders from throughout the power electronics supply chain – from manufacturers and suppliers to researchers and industry experts – to network, share expertise and discover new products and solutions. Alongside the main exhibition, PCIM Asia hosts a selection of concurrent forums that provide additional opportunities for learning and interaction. The Exhibitor Forums provide a platform for exhibitors to promote their latest technologies, while the Industry Forums feature invited speakers, including researchers and subject matter experts, who discuss developments, innovations and challenges in the power electronics field across selected application areas. PCIM Asia is jointly organised by Guangzhou Guangya Messe Frankfurt Co Ltd and Mesago Messe Frankfurt GmbH. | 18.06.2024 09:00:00 | Jun | news_2024-07-01_3.jpg | \images\news_2024-07-01_3.jpg | https://pcimasia-expo.cn.messefrankfurt.com/shenzhen/en/press/press-releases/2024/PCIM24_PR2.html | pcimasia-expo.cn |
| High-density Power Modules for Deep-Sea ROVs | Historically, commercial divers have taken great r... | 11977 | Industry News | High-density Power Modules for Deep-Sea ROVs | Historically, commercial divers have taken great risks to inspect oil and gas pipelines, high-voltage electrical cables, wind turbines and other critical infrastructure deep undersea. Saab has eliminated that risk bringing deep-sea exploration expertise to commercial underwater applications. With a mission to keep people and society safe, the Seaeye range of ROVs has been developed with more agile and modular systems designs. Saab UK’s Seaeye systems are capable of performing a wide range of tasks from observation and inspection to more complex functions like underwater maintenance. This evolution has culminated in the development of a system which is claimed to be “the world's most advanced all-electric work-class ROV (eWROV)”, which combines versatility and maneuverability. Unlike traditional hydraulic ROVs, the eWROV eliminates the need for large amounts of hydraulic fluid, thereby mitigating environmental risks. Critical specifications for the eWROV’s power converter are size, mass and thermal dissipation, given that the electronic systems are housed in sealed enclosures where space is at a premium and conventional convection cooling is not possible. To meet these requirements, Saab chose Vicor power modules for their high density and efficiency. These modules enable efficient power distribution to various eWROV subsystems such as thrusters, manipulators and onboard electronics. The use of Vicor power modules allows Saab to customize Seaeye subsystems according to specific industry-standard 24V and 48V levels required by onboard computers, sensors, video cameras, lights and navigation equipment. | 18.06.2024 07:00:00 | Jun | news_2024-07-01_1.jpg | \images\news_2024-07-01_1.jpg | https://www.vicorpower.com/press-room/saab-seaeye | vicorpower.com |
| Rugged 650 V and 1200 V IGBTs | WeEn Semiconductors has introduced IGBTs with volt... | 12033 | Product Release | Rugged 650 V and 1200 V IGBTs | WeEn Semiconductors has introduced IGBTs with voltage ratings of 650 V and 1200 V, which incorporate a fast recovery anti-parallel diode and show “extremely low leakage currents and exceptional conduction and switching characteristics at both high and low junction temperatures”, the company says. Based on fine trench gate field-stop (FS) technology, the IGBTs are said to provide a more uniform electric field within the chip, support higher breakdown voltages and offer improved dynamic control. WeEn claims that the devices offer “optimum trade-off between conduction and switching losses, as well as an enhanced EMI design”. The IGBTs offer ratings of 650V/75A, 1200V/40A and 1200V/75A and are supplied in TO247 or TO247-4L packages depending on the selected device. All of the devices will operate with a maximum junction temperature (T<sub>j</sub>) of 175 °C and have undergone high-voltage H3TRB (high-humidity, high-temperature and high-voltage reverse bias) and 100%-biased HTRB (high-temperature reverse bias) tests up to this maximum. Target applications include solar inverters, motor control systems, uninterruptible power supplies (UPS) and welding. A positive temperature coefficient simplifies parallel operation in applications where higher performance is required, while options for bare die, discrete and module product variants provide flexibility for a wide variety of target designs. | 12.06.2024 14:30:00 | Jun | news_2024-07-15_18.jpg | \images\news_2024-07-15_18.jpg | https://www.ween-semi.com/en/cat/igbt | ween-semi.com |
| BLDC Motor Hardware-Software Combo | Power Integrations complemented its hardware-softw... | 11995 | Product Release | BLDC Motor Hardware-Software Combo | Power Integrations complemented its hardware-software bundle for brushless DC motors (BLDC) with BridgeSwitch™-2, a high-voltage integrated half-bridge (IHB) motor-driver IC family targeting applications up to 1 HP (746 W). The ICs, which feature high- and low-side drivers and advanced FREDFETs with integrated lossless current sensing, deliver inverter efficiency of up to 99 percent. The IHB architecture eliminates hot spots, which increases design flexibility and reliability, slashes component count and saves PCB area. BridgeSwitch-2 is supported by Power Integrations’ MotorXpert™ software suite which includes single-phase trapezoidal control and three-phase sensor-less Field Oriented Control (FOC) modules, speeding inverter development. BridgeSwitch-2 ICs handle operational exceptions in hardware, which permits the use of IEC 60730 Class A safety software, reducing certification time by months. Quiescent BLDC inverters can be ordered into sleep-mode, reducing driver power consumption to less than 10 mW; this leaves more power available under regulated standby power limits to be allocated for loads such as network access and monitoring. The IHB architecture reduces component count by 50 percent and PCB space by 30 percent over discrete designs by eliminating shunt resistors and associated signal conditioning circuits. Shunt losses are also eliminated, improving efficiency. Precise motor control is achieved with the built-in real-time reporting of phase current (IPH) information. Accurate turn-on/off gate drive and a soft-body diode result in a typical EMI profile 10 dB lower than existing drivers, so a smaller EMI filter can be selected. | 11.06.2024 14:30:00 | Jun | news_2024-07-01_19.jpg | \images\news_2024-07-01_19.jpg | https://investors.power.com/news/news-details/2024/Power-Integrations-Revs-Up-Motor-Drive-Offering-With-BridgeSwitch-2-BLDC-IC-Family/default.aspx | power.com |
| 2-in-1 SiC Molded Module | Rohm Semiconductor introduced four models as part ... | 11994 | Product Release | 2-in-1 SiC Molded Module | Rohm Semiconductor introduced four models as part of the TRCDRIVE pack™ series with 2-in-1 SiC molded modules (two 750V-rated, BSTxxxD08P4A1x4; two 1200V-rated, BSTxxxD12P4A1x1) optimized for electric vehicle traction inverters. TRCDRIVE pack supports up to 300 kW and features high power density and a unique terminal configuration, helping solve the key challenges of traction inverters in terms of miniaturization, higher efficiency, and fewer person-hours. A trademark brand for ROHM SiC molded type modules developed specifically for traction inverter drive applications, TRCDRIVE pack reduces size by utilizing a unique structure that maximizes heat dissipation area. In addition, ROHM’s 4th generation SiC MOSFETs with low ON resistance are built in, resulting in an “industry-leading power density” 1.5 times higher than that of general SiC molded modules, while contributing to the miniaturization of xEV inverters. The modules are also equipped with control signal terminals using press-fit pins, enabling easy connection by simply pushing the gate driver board from the top, considerably reducing installation time. In addition, low inductance (5.7 nH) is achieved by maximizing the current path and utilizing a two-layer bus-bar structure for the main wiring, contributing to lower losses during switching. Despite developing modules, Rohm has established a mass production system similar to discrete products, making it possible to increase production capacity by 30 times compared to conventional SiC case-type modules. | 11.06.2024 13:30:00 | Jun | news_2024-07-01_18.jpg | \images\news_2024-07-01_18.jpg | https://www.rohm.com/news-detail?news-title=2024-06-11_news_trcdrive-pack&defaultGroupId=false | rohm.com |
| 16/24-Channel Automotive LED Driver | Novosense Microelectronics has developed the 16/24... | 12032 | Product Release | 16/24-Channel Automotive LED Driver | Novosense Microelectronics has developed the 16/24-channel driver IC NSL21916/24 for automotive LED applications. It offers a variety of driving options for up to 16/24 channels and features flexible dimming and control capabilities. Target applications include rear lights, exterior lights and general automotive interior and body lighting. At PCIM 2024, NOVOSENSE provided a live demonstration of the IC in a rear lighting application. Qualified to AEC-Q100 Grade 1(T<sub>j</sub> from -40 °C to 150 °C), the NSL21916/24 supports individual control and high-side currents of up to 100 mA for each channel. A 2-bit global and 6-bit individual current setting combined with 12-bit independent PWM dimming and phase shift PWM dimming capabilities enable LED brightness control. On-board programmable EEPROM allows the same device to be configured for different applications, while a built-in UART/ digital interface supports several control and diagnostic functions. Addition of a standard CAN physical layer allows this interface to be used for long-distance, off-board communications without any impact on EMC. The NSL21916/24 is supplied in a HTSSOP38 package, has a dropout voltage of 600 mV max. (@ 50 mA) and provides multiple regulation with LED open-circuit, LED short-to-ground and single LED short-circuit diagnostics. | 11.06.2024 13:30:00 | Jun | news_2024-07-15_17.jpg | \images\news_2024-07-15_17.jpg | https://www.novosns.com/en/company-news-307 | novosns.com |
| “Industry’s first GaN IPM” | Texas Instruments introduced “the industry’s first... | 11993 | Product Release | “Industry’s first GaN IPM” | Texas Instruments introduced “the industry’s first 650 V three-phase GaN IPM for 250 W motor drive applications”. The GaN IPM addresses many of the design and performance compromises engineers typically face when designing major home appliances and heating, ventilation and air-conditioning (HVAC) systems. The DRV7308 GaN IPM, which is integrated in a 12mm-by-12mm package, enables more than 99% inverter efficiency, optimized acoustic performance, reduced solution size and lower system costs. In addition, the DRV7308 is claimed to achieve “industry-low dead time and low propagation delay, both less than 200ns, enabling higher pulse-width modulation (PWM) switching frequencies that reduce audible noise and system vibration”. This also reduces motor heating, which can improve reliability and extend the lifetime of the system. | 11.06.2024 12:30:00 | Jun | news_2024-07-01_17.jpg | \images\news_2024-07-01_17.jpg | https://news.ti.com/2024-06-11-TI-unveils-industrys-first-GaN-IPM-to-enable-smaller,-more-energy-efficient-high-voltage-motors | ti.com |
| 1700V SiC Schottky Discretes and Dual Diode Modules | Semiq has announced the addition of 1700 V SiC Sch... | 11990 | Product Release | 1700V SiC Schottky Discretes and Dual Diode Modules | Semiq has announced the addition of 1700 V SiC Schottky discrete diodes and dual diode packs to its QSiC™ product line. The GP3D050B170X (bare die) and GP3D050B170B (TO-247-2L package) discrete diode is rated for respective maximum forward currents of 110 A and 151 A. Device design supports easy parallel configurations, enhancing flexibility and scalability for various power applications. The new devices meet the size and power demands of a wide range of demanding applications including switched-mode power supplies, uninterruptible power supplies (UPS), induction heaters, welding equipment, DC/DC converters, solar inverters and electric vehicle (EV) charging stations. Featuring zero reverse recovery current and near-zero switching loss, Semiq’s 1700 V SiC Schottky diode technologies offer enhanced thermal management that reduces the need for cooling. As a result, engineers can implement highly efficient, high-performance designs that minimize system heat dissipation, allow the use of smaller heatsinks and lead to cost and space savings. All of the new products support fast switching across operating junction temperatures (T<sub>j</sub>) of -55 °C to 175 °C. | 11.06.2024 09:30:00 | Jun | news_2024-07-01_14.jpg | \images\news_2024-07-01_14.jpg | https://semiq.com/pcim-2024-semiq-introduces-1700v-sic-schottky-discretes-and-dual-diode-modules/ | semiq.com |
| One Channel Power Supply for Current Transducers | Danisense has launched a compact size one channel ... | 12028 | Product Release | One Channel Power Supply for Current Transducers | Danisense has launched a compact size one channel power supply suitable for its DT, DS, DN and DM series of current transducers. The DSSIU-1 power supply is specified with dimensions of 130 mm x 116 mm x 56 mm, +/- 15 V supply voltage and 1.2 A DCCT nominal current. The position of DSUB and banana connectors on the front side facilitates the set-up. The DSSIU-1 power supply already features TEDS functionality for the next generation of current transducers allowing automatic set-up with compatible instruments. | 11.06.2024 09:30:00 | Jun | news_2024-07-15_13.jpg | \images\news_2024-07-15_13.jpg | https://danisense.com/news/danisense-launches-compact-size-one-channel-power-supply/ | danisense.com |
| Inverter Reference Design (almost) ready for Vehicle Integration | CISSOID is introducing the EVK-PLA1060 series of O... | 12027 | Product Release | Inverter Reference Design (almost) ready for Vehicle Integration | CISSOID is introducing the EVK-PLA1060 series of On-Board Inverter Reference Designs which are said to be a complete solution, conceived for integration into vehicles about to undergo in-vehicle and field testing, drastically reducing the time required for system development. Featuring a compact and lightweight, yet robust aluminum housing, the EVK-PLA1060 offers direct vehicle mounting with lower design effort. Furthermore, the motor control software allows customization and configuration by the user for additional process simplification. Driving the product’s functionality is Silicon Mobility’s OLEA® T222 FPCU (Field Programmable Control Unit). The programmable hardware of the T222 processor enables fast control loops and high switching frequencies, combined with the OLEA APP - T222 inverter control software. Both the OLEA T222 processor and OLEA APP - T222 inverter software carry ISO26262 ASIL-D and AUTOSAR 4.3 certification, while the ISO26262 certification of CISSOID’s ICMs (Inverter Control Modules) is currently in progress. The EVK-PLA1060 is configurable and customizable as required. It consists of a power module, the control board, a low ESL DC-link capacitor, an EMC filter and current sensors. The EVK-PLA1060 provides a power range of 100 to 350 kW, at a 100 to 850 V operating bus voltage - for a power density up to 52 kW/l. | 11.06.2024 08:30:00 | Jun | news_2024-07-15_12.jpg | \images\news_2024-07-15_12.jpg | http://www.cissoid.com/news/cissoid-ingenuity-facilitates-faster-inverter-development-24 | cissoid.com |
| Isolated probing system for precise measurements of fast switching signals | Rohde & Schwarz has developed the R&S RT-ZISO isol... | 11989 | Product Release | Isolated probing system for precise measurements of fast switching signals | Rohde & Schwarz has developed the R&S RT-ZISO isolated probing system. The R&S RT-ZISO enables accurate measurements of fast switching signals, especially in environments with high common-mode voltages and currents. Also new is the R&S RT-ZPMMCX passive probe with MMCX connector, which complements the isolated probe system perfectly for certain measurement tasks. The company claims that “the R&S RT-ZISO will set new standards in isolated probe technology, delivering unprecedented accuracy, sensitivity, dynamic range, and bandwidth for next generation wide bandgap (WBG) power designs with SiC and GaN”. The R&S RT-ZISO provides differential measurements of up to ±3 kV on reference voltages of ±60 kV with a rise time of < 450 ps and suppresses fast common-mode signals that can distort and interfere with accurate measurements. Its power-over-fiber architecture galvanically isolates the device under test (DUT) from the measurement setup, providing a much higher common-mode rejection ratio (CMRR) than conventional differential probes. Its key features include bandwidth options of 100 MHz to 1 GHz (upgradeable), a CMRR of > 90 dB (> 30 000:1) at 1 GHz, an input and offset range of ±3 kV, a common mode range of ±60 kV, and a sensitive input range of ±10 mV. | 11.06.2024 08:30:00 | Jun | news_2024-07-01_13.jpg | \images\news_2024-07-01_13.jpg | https://www.rohde-schwarz.com/uk/about/news-press/all-news/rohde-schwarz-presents-r-s-rt-ziso-isolated-probing-system-for-precise-measurements-of-fast-switching-signals-press-release-detailpage_229356-1503305.html | rohde-schwarz.com |
| Design Kit for Power over Ethernet | Bourns has introduced the POE-LAB1 Design Kit, cre... | 11988 | Product Release | Design Kit for Power over Ethernet | Bourns has introduced the POE-LAB1 Design Kit, created to help streamline both the designing of power/data delivery and protection in Power over Ethernet (PoE) applications. The kit includes components from Bourns’ portfolio of semiconductor and magnetic products that are particularly suited to support high-speed Ethernet lines (up to 10 GbE) with PoE++ (Type 4) capabilities. This kit provides a synergistic approach that gives developers a resource with several options for their PoE designs that can satisfy a variety of power/data delivery and protection requirements. The Bourns® POE-LAB1 Design Kit comes with 32 different products. This allows designers to evaluate how multiple product combinations can meet various PoE application specifications by using one single design kit. The Bourns® products in the kit are comprised of Ethernet transformers, DC/DC conversion transformers, a common mode choke, ferrite beads, single and bridge Schottky rectifier diodes, high-speed protectors, diode arrays and TVS diodes. | 11.06.2024 07:30:00 | Jun | news_2024-07-01_12.jpg | \images\news_2024-07-01_12.jpg | https://www.bourns.com/news/press-releases/pr/2024/06/11/bourns-releases-poe-lab1-design-kit-to-help-streamline-power-data-delivery-and-protection-designs-in-power-over-ethernet-applications | bourns.com |
| GaN Devices with “lowest ever On-Resistance” | Cambridge GaN Devices (CGD) has launched its “lowe... | 12026 | Product Release | GaN Devices with “lowest ever On-Resistance” | Cambridge GaN Devices (CGD) has launched its “lowest ever on-resistance (RDS(on)) parts” which have been engineered with a new die and new packages to deliver the benefits of GaN to high-power applications such as data centers, inverters, motor drives and other industrial power supplies. ICeGaN™ P2 series ICs feature RDS(on) levels down to 25 mΩ, supporting multi kW power levels. Incorporating an on-chip Miller Clamp to eliminate shoot-through losses during fast switching and implementing 0 V turn off to minimize reverse conduction losses, ICeGaN ICs are said to “outperform discrete e-Mode GaN and other incumbent technologies”. The best thermal resistance is specified 0.28 K/W, which is claimed to be “again, equivalent or better than anything else currently available on the market”. The dual-gate pinout of the dual side DHDFN-9-1 (Dual Heat-spreader DFN) package with wettable flanks facilitates paralleling for scalability, also enabling multi kW applications. The family includes four devices with RDS(on) levels of 25 mΩ and 55 mΩ, rated at 60 A and 27 A, in 10 mm x 10 mm footprint DHDFN-9-1 and BHDFN-9-1 (Bottom Heat-spreader DFN) packages. In common with all CGD ICeGaN products, the P2 series can be driven using any standard MOSFET or IGBT driver. | 11.06.2024 07:30:00 | Jun | news_2024-07-15_11.jpg | \images\news_2024-07-15_11.jpg | https://www.camgandevices.com/en/p/new-gan-power-icegan-ics-enable-the-highest-efficiency-levels-for-data-centres-inverter-and-industrial-smps/ | camgandevices.com |
| Complete Design for an On-Board Charger Solution | Microchip Technology has announced an On-Board Cha... | 12031 | Product Release | Complete Design for an On-Board Charger Solution | Microchip Technology has announced an On-Board Charger (OBC) solution that uses a selection of its automotive-qualified digital, analog, connectivity and power devices, including the dsPIC33C Digital Signal Controller (DSC), the MCP14C1 isolated SiC gate driver and mSiC™ MOSFETs in an industry-standard D2PAK-7L XL package. This solution is designed to increase an OBC system’s efficiency and reliability. To further simplify the supply chain for customers, the company provides the key technologies that support the other functions of an OBC, including communication interfaces, security, sensors, memory and timing. To accelerate system development and testing, Microchip offers a flexible programmable solution with ready-to-use software modules for Power Factor Correction (PFC), DC/DC conversion, communication and diagnostic algorithms. The software modules in the dsPIC33 DSC are designed to optimize performance, efficiency and reliability, while offering flexibility for customization and adaptation to specific OEM requirements. The dsPIC33C DSC and the MCP14C1 isolated SiC gate driver are AEC-Q100 qualified, and the mSiC MOSFET is AEC-Q101-qualified. The dsPIC33C DSC is an AUTOSAR-ready device and is supported by the MPLAB® development ecosystem including MPLAB PowerSmart Development Suite. | 10.06.2024 12:30:00 | Jun | news_2024-07-15_16.jpg | \images\news_2024-07-15_16.jpg | https://www.microchip.com/en-us/about/news-releases/products/microchip-makes-it-easier-to-design-on-board-charger-solution | microchip.com |
| Strategic Current Sensor Chip Supplier | EV manufacturer NIO selected Melexis' current sens... | 11946 | Industry News | Strategic Current Sensor Chip Supplier | EV manufacturer NIO selected Melexis' current sensor chips for their traction inverter systems. Melexis' chips will power all of NIO's battery electric vehicles (BEVs). Through this collaboration, NIO will use from Melexis' current sensor technology, enhancing the efficiency and reliability of their traction inverter systems. Additionally, Melexis provides local support with dedicated engineers to ensure seamless integration and optimization. Dieter Verstreken, VP of China Strategy at Melexis, commented, "We are delighted to collaborate with NIO, a company known for its innovation and leadership. Our current sensor ICs, coupled with the expertise of our dedicated local engineers, will provide NIO with the support they need to achieve success in the electric vehicle market. We look forward to collaborating with NIO on future projects to advance electric vehicle technology." | 06.06.2024 14:00:00 | Jun | news_2024-06-15_9.jpg | \images\news_2024-06-15_9.jpg | https://www.melexis.com/en/news/2024/06jun2024-nio-selects-melexis-as-a-strategic-current-sensor-chip-supplier | melexis.com |
| Renewal of Cooperation Agreement for Packaging Technology | Vincotech has renewed its cooperation agreement wi... | 11945 | Industry News | Renewal of Cooperation Agreement for Packaging Technology | Vincotech has renewed its cooperation agreement with Semikron Danfoss. The two enterprise's alliance, which dates back to 2003, has been extended to further strengthen MiniSKiiP® package technology. Multiple source options for the package to further mitigate the supply chain risk, and standards-compliant design are just a few of the benefits of this renewed cooperation agreement. Featuring service-friendly spring contacts, MiniSKiiP's unique hardware is in mass production for use in motor drives, servo drives, and power supplies. Vincotech and Semikron Danfoss are now set to take MiniSKiiP's reliability and standardization to the next level. Customers can look forward this tech bringing even greater robustness, versatility, and compatibility for their power electronics solutions. | 06.06.2024 13:00:00 | Jun | news_2024-06-15_8.jpg | \images\news_2024-06-15_8.jpg | https://www.vincotech.com/news/product-news/article/vincotech-and-semikron-danfoss-renew-cooperation-agreement-for-miniskiipr-packaging-technology.html | vincotech.com |
| Online Custom Magnetics Design House launches global Production Service | Frenetic Electronics announced Frenetic Factory, a... | 11944 | Industry News | Online Custom Magnetics Design House launches global Production Service | Frenetic Electronics announced Frenetic Factory, a worldwide magnetics production facility with plants in the USA, Mexico, Europe, India, and China. Frenetic Factory can deliver samples quickly with no MOQs. It currently has a production capacity of 8.75M units annually, that can be scaled to even higher volumes fast. Frenetic launched its magnetics design service in 2021. Using an online process and Core Optimizer tool to make the core selection process faster and more efficient, users input their electrical and environmental specifications, and receive an optimized transformer design in minutes by using Frenetic's custom algorithms. The company's web-based platform allows users to compare millions of different magnetics possibilities within seconds. BOMs, 3D models and engineering drawings are automatically generated. Now, users can take that design and have samples and full production quantities made at Frenetic Factory. Frenetic Factory comprises facilities around the world that are both owned by Frenetic Magnetics or a qualified third party. This is the same operational model as much of the rest of the electronic components industry. And Frenetic Factory is fully responsible for the technical support and quality of the components it supplies, no matter which facility they were produced in. Manufacturing quality and product standards adhered to include MIL-STD-461E, MIL-STD-981, ESCC 3201 and Qualified Parts, and AEC-Q200. | 06.06.2024 12:00:00 | Jun | news_2024-06-15_7.jpg | \images\news_2024-06-15_7.jpg | https://frenetic.ai/ | frenetic.ai |
| IWIPP 2025 Call for Papers | The organizing committee is pleased to announce th... | 12022 | Event News | IWIPP 2025 Call for Papers | The organizing committee is pleased to announce that the Call for Papers for IWIPP 2025 is now available. The online portal for abstract submission will open September 1, 2024, and the deadline for submission is November 1, 2024. IWIPP 2025 technical abstracts are submitted in a compact format consisting of a single-page technical description and a second page of figures. IWIPP 2025 will be held April 8-10, 2025, on the campus of University of Alabama, Tuscaloosa, USA. The content of IWIPP 2025 will include a set of keynote addresses from leading power technology experts, a broad range of technical sessions, as well as extensive networking opportunities. All of this is included in the workshop registration fee. | 06.06.2024 12:00:00 | Jun | news_2024-07-15_7.jpg | \images\news_2024-07-15_7.jpg | https://iwipp.org/conference/call-for-papers-2025/ | iwipp.org |
| Global Production Service for Custom Magnetics designed online | Using an online process and special Core Optimizer... | 12029 | Product Release | Global Production Service for Custom Magnetics designed online | Using an online process and special Core Optimizer™ tool to make the core selection process faster and more efficient, users input their electrical and environmental specifications, and receive an optimized transformer design in minutes – this is basically, what Frenetic’s custom algorithms enable. The company’s web-based platform allows users to compare millions of different magnetics possibilities within seconds, “while maintaining the highest level of accuracy.”, the company says. BOMs, 3D models and engineering drawings are automatically generated. Now, users can take that design and have samples and full production quantities made at Frenetic Factory, which comprises facilities around the world that are both owned by Frenetic Magnetics or a qualified third party. This is the same operational model as much of the rest of the electronic components industry. And Frenetic Factory is fully responsible for the technical support and quality of the components it supplies, no matter which facility they were produced in. Manufacturing quality and product standards adhered to include MIL-STD-461E, MIL-STD-981, ESCC 3201 and Qualified Parts, and AEC-Q200. Core types available include ferrite, powder, amorphous, electrical steel and nanocrystalline; shapes include round, Litz, foil, planar and Cu-stamped. | 06.06.2024 10:30:00 | Jun | news_2024-07-15_14.jpg | \images\news_2024-07-15_14.jpg | https://factory.frenetic.ai/ | factory.frenetic.ai |
| Expanded SMT and Module Package Options for 1200 V SiC MOSFETs | Alpha and Omega Semiconductor (AOS) announced the ... | 11987 | Product Release | Expanded SMT and Module Package Options for 1200 V SiC MOSFETs | Alpha and Omega Semiconductor (AOS) announced the expansion of their package portfolio options available for their second generation 650 V to 1200 V αSiC MOSFETs. Applicable to many critical applications such as xEV charging, solar inverters, and industrial power supplies, the package selections give designers the added flexibility of multiple system optimization options to further maximize system efficiency. The first new surface mount package is available for the AOBB040V120X2Q, AOS’ new 1200 V/40 mOhm αSiC MOSFET in a standard D2PAK-7L surface mount package. This AEC-Q101 qualified product is designed to replace traditional through-hole packages. It is suited for applications such as on-board chargers (OBCs) where efficient cooling can be provided by vias and backside PCB heatsinks, simplifying the assembly flow and maximizing the power density. Furthermore, AOS is releasing its GTPAK™ surface mount package with topside cooling features. In designs where a topside-mounted heatsink is viable, the direct heat path from the GTPAK minimizes the thermal resistance. It enables higher power dissipation for more effective PCB routing. The first AOS product in GTPAK is the AOGT020V120X2. This 1200 V/20 mOhm αSiC MOSFET meets the requirements of high-efficiency solar inverter and industrial power supply applications. | 06.06.2024 06:30:00 | Jun | news_2024-07-01_11.jpg | \images\news_2024-07-01_11.jpg | https://www.aosmd.com/sites/default/files/2024-06/AOS_SiC_MOSFET_Packages_PR.pdf | aosmd.com |
| Combination of Silicon Trench and SiC MOSFETs | As data centers become increasingly power-hungry t... | 11992 | Product Release | Combination of Silicon Trench and SiC MOSFETs | As data centers become increasingly power-hungry to support the tremendous processing requirements of AI workloads, the need for boosting energy efficiency is paramount. The combination of onsemi’s latest generation T10® PowerTrench family and EliteSiC 650V MOSFETs create a solution that offers high efficiency and high thermal performance in a smaller footprint for data center applications. Using the T10 PowerTrench family and EliteSiC 650V solution, data centers are able to reduce power losses that occur by an estimated 1%. If implemented in data centers globally, the solution could reduce energy consumption by 10 TWh annually or the equivalent of the energy required to fully power nearly one million homes per year. The R<sub>DS(on)</sub> is less than 1 Milliohm. The T10 PowerTrench Family also meets the stringent standards required for automotive applications. The combined solution also meets the stringent Open Rack V3 (ORV3) base specification required by hyperscale operators to support the next generation of high-power processors. | 05.06.2024 11:30:00 | Jun | news_2024-07-01_16.jpg | \images\news_2024-07-01_16.jpg | https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-unveils-complete-power-solution-to-improve-energy-efficiency-for-data-centers | onsemi.com |
| CoolGaN™ bidirectional Switch and CoolGaN Smart Sense | Infineon Technologies announced two CoolGaN™... | 11949 | Product Release | CoolGaN™ bidirectional Switch and CoolGaN Smart Sense | Infineon Technologies announced two CoolGaN™ product technologies, CoolGaN bidirectional switch (BDS) and CoolGaN Smart Sense. CoolGaN BDS is said to provide "exceptional soft- and hard-switching behavior", with bidirectional switches available at 40 V, 650 V and 850 V. Target applications of this family include mobile device USB ports, battery management systems, inverters, and rectifiers. The CoolGaN Smart Sense products feature lossless current sensing, simplifying design and further reducing power losses, as well as transistor switch functions integrated into one package. They are ideal for usage in consumer USB-C chargers and adapters. The CoolGaN BDS high voltage feature a true normally-off monolithic bi-directional switch with four modes of operation. Based on the gate injection transistor (GIT) technology, the devices have two separate gates with substrate terminal and independent isolated control. The devices are suited for back-to-back switches in single-phase H4 PFC and HERIC inverters and three-phase Vienna rectifiers as well as for single-stage AC power conversion in AC/DC or DC/AC topologies. The CoolGaN BDS 40 V is a normally-off, monolithic bi-directional switch based on Infineon's in-house Schottky Gate GaN technology. It can block voltages in both directions, and through a single-gate and common-source design, it is optimized to replace back-to-back MOSFETs used as disconnect switches in battery-powered consumer products. | 05.06.2024 08:30:00 | Jun | news_2024-06-15_12.jpg | \images\news_2024-06-15_12.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFPSS202406-111.html | infineon.com |
| Precise Power Resistors in 1206 and 1213 Packages for up to 90 A | In relation to their small size, the resistors in ... | 12034 | Product Release | Precise Power Resistors in 1206 and 1213 Packages for up to 90 A | In relation to their small size, the resistors in the WAx series from Isabellenhuette measure relatively high currents. Resistance values from 2 mOhm were already possible with the FMx series. With the new WAK (size 1206) and WAF (size 1213) resistors, the company can also offer resistance values of 1 and 0.5 mOhm. The WAF with a resistance value of 0.75 mOhm is also currently under development. These low-resistance values are made possible by the production process of roll cladding. In this process, a copper strip and a strip made from one of the company's own resistance alloys, Manganin or Zeranin, are rolled together to form a mechanically very stable duo strip. The final component geometry is then punched out of the duo strip – resulting in a size for the WAF component of 3.1 mm x 3.3 mm; the WAK is only half the size. The resistor alloys used to manufacture the WAx resistors are said to ensure high long-term stability, a very good temperature coefficient and a high load capacity with low inductance of less than 0.5 nH. All components are AEC-Q200 qualified and are with an initial tolerance of ±1 % for contious currents up to 90 A. | 04.06.2024 15:30:00 | Jun | news_2024-07-15_19.jpg | \images\news_2024-07-15_19.jpg | https://www.isabellenhuette.de/en/precision-and-power-resistors | isabellenhuette.de |
| Automotive OEM and Semiconductor Manufacturer: Long-Term SiC Supply Agreement and Joint Lab | STMicroelectronics (ST) and Geely Auto have signed... | 11985 | Industry News | Automotive OEM and Semiconductor Manufacturer: Long-Term SiC Supply Agreement and Joint Lab | STMicroelectronics (ST) and Geely Auto have signed a long-term Silicon Carbide supply agreement to accelerate their existing cooperation on SiC devices. Under the terms of this multi-year contract, ST will provide multiple Geely Auto brands with SiC power devices for mid-to-high-end battery electric vehicles (BEVs). In addition, building on their longstanding cooperation across multiple automotive applications, Geely and ST have established a joint lab to exchange information and explore solutions related to automotive Electronics/Electrical (E/E) architectures (i.e. in-vehicle infotainment, smart cockpit systems), ADAS, and NEVs. Geely Auto Group has adopted ST’s third generation SiC MOSFET devices in electric traction inverters. Geely Auto sold a total of 1.68 million vehicles in 2023, with NEV sales reaching 480,000 units, accounting for 28% of the company's total sales for the year. This NEV sales volume represents a year-over-year increase of 48%. | 04.06.2024 15:00:00 | Jun | news_2024-07-01_9.jpg | \images\news_2024-07-01_9.jpg | https://newsroom.st.com/media-center/press-item.html/t4631.html | st.com |
| Collaboration on SiC-Based Traction Inverters for Electric Vehicle Powertrains | NXP Semiconductors announced a collaboration with ... | 11939 | Industry News | Collaboration on SiC-Based Traction Inverters for Electric Vehicle Powertrains | NXP Semiconductors announced a collaboration with automotive tier-1 ZF Friedrichshafen on SiC-based traction inverter solutions for electric vehicles. Using NXP's GD316x high-voltage (HV) isolated gate drivers, the solutions are designed to accelerate the adoption of 800-V and SiC power devices. Safe, efficient and higher performance traction inverters enabled by the GD316x product family can be designed to extend EV range and reduce the number of charging stops while lowering system level costs for OEMs. As traction inverters now migrate to SiC-based designs, the SiC power devices need to be paired with HV isolated gate drivers to harness the advantages such as higher switching frequency, lower conduction losses, better thermal characteristics and higher robustness at high voltages, compared to previous generation silicon-based IGBT and MOSFET power switches. The GD316x family of functionally safe, isolated, high voltage gate drivers incorporates a number of programmable control, diagnostic, monitoring, and protection features, enhanced to drive the latest SiC power modules for automotive traction inverter applications. Its high level of integration allows a smaller footprint and simplifies the system design. The capabilities reduce Electromagnetic Compatibility (EMC) noise while also reducing switching energy losses for better efficiency. | 04.06.2024 07:00:00 | Jun | news_2024-06-15_2.jpg | \images\news_2024-06-15_2.jpg | https://www.nxp.com/company/about-nxp/nxp-and-zf-collaborate-on-sic-based-traction-inverters-to-boost-electric-vehicle-powertrains:NW-NXP-AND-ZF-COLLABORATE-ON-SIC-BASED | nxp.com |
| The first fully integrated SiC Facility in Italy | STMicroelectronics intends to build a high-volume ... | 11938 | Industry News | The first fully integrated SiC Facility in Italy | STMicroelectronics intends to build a high-volume 200mm silicon carbide manufacturing facility for power devices and modules, as well as test and packaging, to be built in Catania, Italy. Combined with the SiC substrate manufacturing facility being readied on the same site, these facilities will form ST's Silicon Carbide Campus. The Silicon Carbide Campus will serve as the center of ST's global SiC ecosystem, integrating all steps in the production flow, including SiC substrate development, epitaxial growth processes, 200mm front-end wafer fabrication and module back-end assembly, as well as process R&D, product design, advanced R&D labs for dies, power systems and modules, and full packaging capabilities. This will achieve a first of a kind in Europe for the mass production of 200 mm SiC wafers with each step of the process – substrate, epitaxy & front-end, and back-end – using 200 mm technologies for enhanced yields and performances. The facility is targeted to start production in 2026 and to ramp to full capacity by 2033, with up to 15,000 wafers per week at full build-out. The total investment is expected to be around five billion euros, with a support of around two billion euros provided by the State of Italy within the framework of the EU Chips Act. | 31.05.2024 06:00:00 | May | news_2024-06-15_1.jpg | \images\news_2024-06-15_1.jpg | https://newsroom.st.com/media-center/press-item.html/c3262.html | st.com |
| Solving Design Challenges with Collaborative eBooks | Mouser Electronics has recently released several e... | 11984 | Industry News | Solving Design Challenges with Collaborative eBooks | Mouser Electronics has recently released several eBooks in collaboration with manufacturing partner Analog Devices (ADI). The eBooks focus on a wide range of topics, such as how production facilities can achieve greater productivity through a flexible manufacturing approach, the technologies being used to support sustainable manufacturing practices, embedded security concepts, and the technological advances in digital factories. In “<i>10 Experts on Flexible Manufacturing</i>”, subject matter experts from ADI and other technology companies discuss how today's sensors, robotic subsystems, and AI-enabled compute units allow factories to adapt fabrication and production with more flexibility. This enables production facilities to achieve greater throughput, product quality and cost-efficiency than ever before. At the same time, improved processes and control can help facilitate a more sustainable manufacturing process that wastes less energy and materials. The eBook also highlights many of ADI's products that help bring flexible manufacturing to life. In “<i>Engineering a More Sustainable Future: Redefining Industrial Efficiency in the Digital Age</i>”, experts from Mouser and ADI explore a wide range of topics related to industrial efficiency. The eBook features more than 10 articles, including a detailed analysis of motor encoders, a single-pair Ethernet condition monitoring vibration sensing solution, and the redesign of an RTD-based temperature sensor for the smart factory age. Several chapters include helpful infographics, as well as links to relevant products from ADI. | 30.05.2024 14:00:00 | May | news_2024-07-01_8.jpg | \images\news_2024-07-01_8.jpg | https://eu.mouser.com/newsroom/publicrelations-adi-ebook-showcase-2024final/ | mouser.com |
| LDO for ultra-miniature Applications | Toshiba Electronics has released of a series of lo... | 11953 | Product Release | LDO for ultra-miniature Applications | Toshiba Electronics has released of a series of low-dropout (LDO) voltage regulators in their ultra-miniature DFN4D package type. Specifically aimed at miniature applications powered by small-scale batteries, the family of devices reduces power consumption, thereby elongating the usable lifetime. With demand for battery powered IoT equipment/modules, communications modules, wearable devices, and other miniature equipment increasing, the LDO regulators of the TCR3LM series offer a line-up of over thirty devices spanning the voltage range 0.8 V DC to 5.0 V DC with an input voltage in the range 1.4 V DC to 5.5 V DC. Each device is capable of delivering up to 300 mA of output current. The TCR3LM offers a typical dropout voltage of 137mV. As the output voltage can be achieved with a lower input voltage, battery drain is reduced. Additionally, the load transient response has been improved, enhancing the output stability when the load fluctuates. The solution is housed in a DFN4D package measuring 1.0 mm × 1.0 mm × 0.37 mm. Furthermore, as small ceramic capacitors can be used on the input and output, the overall solution size is further reduced. | 30.05.2024 12:30:00 | May | news_2024-06-15_16.jpg | \images\news_2024-06-15_16.jpg | https://toshiba.semicon-storage.com/eu/company/news/2024/05/power-management-ics-20240530-1.html | toshiba.semicon-storage.com |
| Building Permit for final Construction Phase of Smart Power Fab in Dresden | Infineon Technologies is on schedule with the cons... | 11942 | Industry News | Building Permit for final Construction Phase of Smart Power Fab in Dresden | Infineon Technologies is on schedule with the construction of the Smart Power Fab in Dresden and is initiating the final construction phase. During a visit, the Prime Minister of the Free State of Saxony, Michael Kretschmer, officially handed over the last outstanding building permit for the new fab issued by the State Directorate of Saxony. The excavation of the building pit has now been completed. The shell and building construction are currently progressing on the concrete foundation, which is up to two meters thick. Infineon officially broke ground for the new plant in Dresden in May 2023. Manufacturing is scheduled to start in 2026. With a total investment of five billion euros, the company is making a significant contribution to the European Commission goal to increase the EU's share of global semiconductor production to 20 percent by 2030. Infineon is aiming for public funding of around one billion euros. On average, construction workers have removed around 8,000 tons of soil every day since the start of work. A total of 450,000 cubic meters of excavated soil has been produced, which corresponds to the volume of 180 Olympic swimming pools. | 30.05.2024 10:00:00 | May | news_2024-06-15_5.jpg | \images\news_2024-06-15_5.jpg | https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFXX202405-109.html | infineon.com |
| MoU for GaN Semiconductors | The fabless semiconductor company Cambridge GaN De... | 11940 | Industry News | MoU for GaN Semiconductors | The fabless semiconductor company Cambridge GaN Devices (CGD) has signed a Memorandum of Understanding (MoU) with Industrial Technology Research Institute (ITRI) of Taiwan to solidify a partnership in developing high performance GaN solutions for USB-PD adaptors. The MoU also covers the sharing of domestic and international market information, joint visits to potential customers and promotion. CGD's IC-enhanced GaN – ICeGaN – is a novel platform that improves ease-of-use, facilitates smart temperature control and enhances gate reliability. The first commercialized product in the market to adopt GaN devices has been USB-PD adaptors, and it is this market that the first designs from the partnership will address. Specifically, the agreement covers the development of power solutions in the 140-240 W range with power densities exceeding 30 W/in3 for e-mobility, power tools, notebook and cell phone applications. | 30.05.2024 08:00:00 | May | news_2024-06-15_3.jpg | \images\news_2024-06-15_3.jpg | https://www.camgandevices.com/en/p/cambridge-gan-devices-signs-mou-with-itri-covering-gan-based-power-supply-development/ | camgandevices.com |
| Gain Pre-Driver for 5G mMIMO | Qorvo announced "the industry's highest gain pre-d... | 11952 | Product Release | Gain Pre-Driver for 5G mMIMO | Qorvo announced "the industry's highest gain pre-driver providing 39 dB gain at 3.5 GHz and achieving a peak power of +29 dBm". This MIMO (mMIMO) pre-driver dubbed QPA9822 is a wideband, high gain, high linearity driver amplifier, engineered specifically for 32-node mMIMO systems. It is designed to enable wideband 5G New Radio (NR) instantaneous signal bandwidths of up to 530 MHz, making it ideally suited for the N77 band critical for 5G deployment and other mMIMO applications. | 29.05.2024 11:30:00 | May | news_2024-06-15_15.jpg | \images\news_2024-06-15_15.jpg | https://www.qorvo.com/newsroom/news/2024/qorvo-unveils-industrys-highest-gain-pre-driver-for-5g-mmimo | qorvo.com |
| Evaluation Modules with Integrated Buck Converters | Evaluation of Recom's range of integrated buck reg... | 11950 | Product Release | Evaluation Modules with Integrated Buck Converters | Evaluation of Recom's range of integrated buck regulators is now made easier with the new EVMs. Suiting models in the Recom RPL, RPH, and RPZ range with current ratings from 0.5 A to 20 A, the evaluation modules provide a way to characterize the converter performance in a realistic environment, both thermally and electrically. Filters are included to demonstrate compliance with EMI 'Class B' levels and all functions available in each converter can be exercised, e. g. output voltage selection and trim, remote sensing, on/off control, switching frequency selection, soft start, input under-voltage lock-out, and Power Good signaling. As the EVMs are designed to provide typical application heatsinking, the buck converters can be operated and evaluated at full load, and behavior is investigated under overload and overtemperature conditions. Alternate component positions are also included to allow experimentation to tailor EMC performance to the application and budget. The RPL, RPH, and RPZ products are a range of cost-effective integrated buck converters in QFN and LGA packages featuring advanced thermal and electrical design. The modules all have integrated inductors and feature a miniature footprint and profile down to 1.6 mm. | 29.05.2024 09:30:00 | May | news_2024-06-15_13.jpg | \images\news_2024-06-15_13.jpg | https://recom-power.com/en/company/newsroom/rec-n-evaluation-modules-now-available-for-rpl,-rph-and-rpz-switching-regulators-367.html?4 | recom-power.com |
| Rugged 500 W AC/DC Power Supplies utilizing Conduction Cooling for harsh Environments | P-DUKE has launched its XTBF500 AC/DC power supply... | 11948 | Product Release | Rugged 500 W AC/DC Power Supplies utilizing Conduction Cooling for harsh Environments | P-DUKE has launched its XTBF500 AC/DC power supply series, available in open frame or enclosed form. The XTBF500 integrates the TBF500 full brick 500 W AC/DC power supply and its peripheral circuits, such as EMC filters, start-up current limiters, large capacity capacitors, and aluminum substrates, to achieve the concept of "easy to use." The XTBF500 series features a universal input voltage range of 85-264 V<sub>AC</sub>. The output voltage is 12, 15, 24, 28, 48, and 54 V<sub>DC</sub>, adjustable within a range of +10%/-10% via potentiometer. It also features slope current sharing to provide over 500 W of power by paralleling multiple modules, as well as complete protection functions, including overcurrent protection (hiccup mode), short circuit protection (auto-recovery), and output overvoltage protection (latch). XTBF500 has integrated all peripheral devices together to combine the advantages of a full brick module and a complete AC/DC power supply, in compliance with EMC standard EN/IEC 50032 Class B (CE Class B, RE Class A), start-up inrush current limiter function, and OVC III (overvoltage category). By conducting cooling on the system chassis, it can operate at full load up to 40 degrees to cope with harsh applications and demanding environments. The XTBF500 is designed for challenging operating conditions and is suited for various applications such as 5G communication, ESS, defense, robotics, and factory automation. | 29.05.2024 07:30:00 | May | news_2024-06-15_11.jpg | \images\news_2024-06-15_11.jpg | https://www.pduke.com/news_detail28_157.htm | pduke.com |
| Coreless High Current Sensors | Capable of measuring high DC currents from 2 kA up... | 11947 | Product Release | Coreless High Current Sensors | Capable of measuring high DC currents from 2 kA up to 42 kA without surge current limitations, the Open Loop Coreless Integral (OLCI) sensors from LEM feature a large aperture for accurate measuring of high currents on large busbars, with up to 1 MHz bandwidth for high frequency applications. They are also significantly lighter (80%) and more cost effective than open loop or closed loop current transducers operating within the same current measuring range. Two versions of the OLCI high current sensors are available from LEM – the FRS model supporting primary busbar apertures of 104 mm x 22 mm and the FL for apertures up to 300 mm x 100 mm. Because it is a split transducer, the FL can be opened and attached directly anywhere on the busbar without the need to open the busbar, making it easy to install and maintain. With no magnetic core, no secondary copper winding, an integrated Rogowski coil and an array of Hall elements, the FRS sensor slashes raw material costs and reduces power losses. Equally suited to trackside and onboard traction applications in the railway industry as they are for high power wind turbines and hydrogen electrolysers, the sensors can also be used on industrial low-voltage and medium-voltage variable frequency drives, in induction welding applications, and for DC grid monitoring. | 29.05.2024 06:30:00 | May | news_2024-06-15_10.jpg | \images\news_2024-06-15_10.jpg | https://www.lem.com/en/frs-fl | lem.com |
| Expanded Range of Power Inductors | In addition to Würth Elektronik's five existing pa... | 11954 | Product Release | Expanded Range of Power Inductors | In addition to Würth Elektronik's five existing package sizes of WE-XHMI SMT power inductors there are now eight more packages. These compact yet very efficient inductors feature a current capacity up to 56 A saturation current and the ability to handle high transient current spikes. This makes them particularly suitable for use as DC/DC converters in power supplies, point-of-load converters and high-current filters, as well as in industrial computers, mainboards and graphics cards. The molded flat wire inductor, previously only available in the Power Magnetics product family, now also comes in 4020, 4030, 4040, 5020, 5030, 5050, 7030 and 7070 package sizes. The series is also available in smaller packages, and the 70xx sizes close a gap in the existing portfolio. The AEC-Q200-qualified WE-XHMI series inductors can be used at operating temperatures from -40 °C to +125 °C and cover an inductance range from 0.15 to 33 µH with currents up to 56 A. | 28.05.2024 13:30:00 | May | news_2024-06-15_17.jpg | \images\news_2024-06-15_17.jpg | https://www.we-online.com/en/news-center/press/press-releases?d=we-xhmi | we-online.com |
| IEDM: Call for Papers | Under the theme "Shaping Tomorrow's Semiconductor ... | 11941 | Event News | IEDM: Call for Papers | Under the theme "Shaping Tomorrow's Semiconductor Technology," the 70<sup>th</sup> annual IEEE International Electron Devices Meeting (IEDM) has issued a Call for Papers seeking the world's best original work in all areas of microelectronics research and development. The 2024 IEEE IEDM will take place December 7-11, 2024 at the Hilton San Francisco Union Square hotel, with on-demand access to recorded presentations after the event. The paper submission deadline is Thursday, July 11, 2024. Authors are asked to submit four-page papers electronically in IEEE Xplore-compatible PDF format. Accepted papers will be published as-is in the proceedings. A few late-news papers also will be accepted, covering only the most recent, most noteworthy developments. The late-news submission deadline is August 19, 2024. The IEEE IEDM is the premier forum for technological breakthroughs in semiconductor and related device technology, manufacturing, design, physics, and modeling. Each year, the world's leading technologists gather to participate in a technical program of more than 220 presentations, panels, focus sessions, tutorials, Short Courses, supplier exhibits, IEEE/EDS award presentations, and other events highlighting the industry's best work. In the power sector IEDM will put special emphasis e. g. on "Emerging Power Electronic Devices and Integration for a Sustainable Society", "Novel materials and innovative applications for next-generation devices" and "Advanced packaging, and package-device level interactions". | 28.05.2024 09:00:00 | May | news_2024-06-15_4.jpg | \images\news_2024-06-15_4.jpg | https://www.ieee-iedm.org/call-for-papers-overview | ieee-iedm.org |
| Roadmap for Power Supply Units in AI Data Centers | The influence of artificial intelligence (AI) is d... | 11928 | Industry News | Roadmap for Power Supply Units in AI Data Centers | The influence of artificial intelligence (AI) is driving up the energy demand of data centers across the globe. This growing demand underscores the need for efficient and reliable energy supply for servers. Infineon Technologies opens a new chapter in the energy supply domain for AI systems and unveils a roadmap of energy efficient power supply units (PSU) specifically designed to address the current and future energy need of AI data centers. By introducing unprecedented PSU performance classes, Infineon enables cloud data center and AI server operators to reduce their energy consumption for system cooling. The innovative PSUs reduce power consumption and CO <sub>2</sub> emissions, resulting in lower lifetime operating costs. The powerful PSUs are not only used in future data centers but can also replace existing power supply units in servers and increase efficiency. In addition to the current PSUs with an output of 3 kW and 3.3 kW available today, the new 8 kW and 12 kW PSUs will contribute to further increasing energy efficiency in future AI data centers. | 24.05.2024 13:00:00 | May | news_2024-06-01_8.jpg | \images\news_2024-06-01_8.jpg | https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFPSS202405-105.html | infineon.com |
| Half-Bridge MOSFET for DC-DC Applications | Alpha and Omega Semiconductor introduced its AONG3... | 11936 | Product Release | Half-Bridge MOSFET for DC-DC Applications | Alpha and Omega Semiconductor introduced its AONG36322 XSPairFET designed for space-constrained DC-DC applications. The device features two 30V MOSFETs in a half-bridge configuration where the high-side and the low-side MOSFETs are in an asymmetric DFN3.5x5 XSPairFET package. This design allows the AONG36322 to replace an existing DFN5x6 asymmetric half-bridge MOSFET with an approximate 60 percent space-saving solution, thereby reducing the PCB footprint to further streamline the DC-DC architecture, resulting in a more efficient design. These benefits make the AONG36322 ideal for a new generation of smaller DC-DC buck converters in more compact applications such as point-of-load (POL) computing, USB hubs, and power banks. The AONG36322 is an extension to the AOS XSPairFET lineup, designed with the latest bottom-source packaging technology. Its integrated high-side and low-side MOSFETs feature 4.5 mOhms and 1.3 mOhms maximum on-resistance, respectively, where the low-side MOSFET source is connected directly to the exposed pad on the PCB to enhance thermal dissipation. A definite advantage of the state-of-the-art AONG36322 package design is that it delivers lower parasitic inductance, significantly reducing switch node ringing. | 23.05.2024 13:30:00 | May | news_2024-06-01_16.jpg | \images\news_2024-06-01_16.jpg | https://www.aosmd.com/sites/default/files/2024-05/AOS_36322_XSPairFET_PR.pdf | aosmd.com |
| Preferred Partner of Semiconductor Manufacturer | Würth Elektronik is now a preferred partner at Ren... | 11937 | Industry News | Preferred Partner of Semiconductor Manufacturer | Würth Elektronik is now a preferred partner at Renesas. By partnering with Renesas as a preferred partner, Würth Elektronik gains access to a host of resources and support to further enhance its capabilities in delivering innovative solutions, as well as joint solution options shown at tradeshows, webinars, seminars, and blog articles. This partnership also signifies Würth Elektronik's dedication to reducing development risks and accelerating time-to-market for customers by leveraging Renesas' extensive portfolio of products and solutions. Renesas preferred partners are elite system solution providers renowned for their expertise in deploying Renesas products to deliver highly optimized solutions. These partners undergo rigorous training and boast extensive experience, ensuring they can effectively leverage Renesas technologies to meet diverse customer needs. Renesas' preferred partners play a crucial role in bringing value-added solutions to customers, whether in the early stages of prototyping, sample and technical support, or advancing towards productization based on proof of concepts (PoCs) from Renesas or its partners. This collaboration ensures that customers benefit from optimized solutions that meet the relevant standards of quality and performance. | 23.05.2024 10:00:00 | May | news_2024-06-01_5.jpg | \images\news_2024-06-01_5.jpg | https://www.we-online.com/en | we-online.com |
| Opening of Manufacturing Plant in Mexico | Littelfuse held a ribbon-cutting ceremony to celeb... | 11925 | Industry News | Opening of Manufacturing Plant in Mexico | Littelfuse held a ribbon-cutting ceremony to celebrate the opening of a new manufacturing plant in Piedras Negras, Coahuila, Mexico. The newly opened and operational 10,000-square-metre facility, which doubles the current local Littelfuse manufacturing capacity while maintaining room for additional expansion, is located close to three other company operations in the city. The facility's innovative automation systems ensure precision and efficiency, allowing for a high degree of customization to meet specific client needs. The purpose-built facility utilizes water treatment processes resulting in zero water consumption. The smart air compressors, high-efficiency HVAC, safety relays, and use of LED lighting throughout the facility deliver energy effectively and efficiently. The manufacturing operations team of 1,000 employees is being staffed from a combination of current talent from nearby Littelfuse locations and new hires. The facility is fully accessible, convenient to public transportation and daycare, and will bring increased opportunities for career development and community outreach and support. | 23.05.2024 09:00:00 | May | news_2024-06-01_4.jpg | \images\news_2024-06-01_4.jpg | https://www.littelfuse.com/about-us/news/news-releases/2024/littelfuse-announces-grand-opening-of-manufacturing-plant-in-piedras-negras.aspx | littelfuse.com |
| Tradeshow emphasizes Smart Energy Solutions | As electronics is a key factor in the energy trans... | 11924 | Event News | Tradeshow emphasizes Smart Energy Solutions | As electronics is a key factor in the energy transition and development of smart energy solutions, smart energy will be a key topic at electronica 2024, which will take place from November 12 to 15 in Munich, Germany. According to a report by MarketsandMarkets, the global market for smart energy is expected to grow from 170 billion US dollars in 2022 to 283 billion US dollars by 2027, which is equivalent to a compound annual growth rate (CAGR) of 10.6%. The main driver of this growth is the increasing demand for intelligent power grids, known as smart grids. At electronica 2024, which is all about the all-electric society, the topic of smart energy will play a correspondingly important role, whether at the trade fair stands or in the conference and forum program. The Power Electronics Forum in Hall A5, for example, will look at the entire spectrum of power electronics. Here, experts will discuss current trends and developments that are of crucial importance for the energy transition and for implementing the all-electric society. Hall A4 will be all about innovations in transformers, power supplies, power supply units and batteries. In Halls B4, B5, C3, C4 and C5, numerous exhibitors will be presenting their latest products and solutions relating to semiconductors, while embedded systems can be found in Hall B4. | 23.05.2024 08:00:00 | May | news_2024-06-01_3.jpg | \images\news_2024-06-01_3.jpg | https://electronica.de/en/trade-fair/journalists/press-releases/detail/electronica-2024-showcases-smart-energy-solutions-for-the-future.html | electronica.de |
| AC/DC Power Supplies for AGV/AMR Battery Charging Stations | TTI – Europe is supporting the design and developm... | 11935 | Product Release | AC/DC Power Supplies for AGV/AMR Battery Charging Stations | TTI – Europe is supporting the design and development of charging stations for industrial and service mobile robots with Advanced Energy's Artesyn™ LCM series of single-output AC-DC power supplies. These robust and reliable units are tailored for fast and efficient charging of Automated Guided Vehicles (AGV) and Autonomous Mobile Robots (AMR) batteries in charging stations. Within the LCM series there are five variants, ranging from 300 Watts to 3000 Watts. They offer a typical full-load efficiency of up to 93%, thereby reducing operating costs and improving thermal performance. Many models within this series do not require derating at low-line. The single output front-end units accept operating inputs between 90Vac and 264Vac for global use, and a wider 85Vac to 264Vac input range for the LCM300 & LCM600 series. The LCM series is available with output voltages of 12V, 15V, 24V, 36V and 48V – the LCM1500 series is offered with an additional 28V output, with 18V and 72V for the LCM3000 series. All outputs are adjustable to a percentage of their nominal value, which means that any output voltage between 9.6 and 57.6V is available to accommodate non-standard system voltages. In addition, the ability to share current allows multiple power supplies to be connected in parallel for higher power applications. | 22.05.2024 12:30:00 | May | news_2024-06-01_15.jpg | \images\news_2024-06-01_15.jpg | https://www.ttieurope.com/content/ttieurope/en/about-tti/news-center/corporate-news/press-releases/2024/may/pr-05232024-advanced-energy-lcm-series-ac-dc-power-supplies.html | ttieurope.com |
| Cooperation to offer SmartSiC | X-FAB and Soitec will begin work to offer Soitec's... | 11927 | Industry News | Cooperation to offer SmartSiC | X-FAB and Soitec will begin work to offer Soitec's SmartSiC™ wafers for the production of silicon carbide power devices at X-FAB's plant in Lubbock, Texas. This collaboration follows the successful completion of the assessment phase, during which silicon carbide (SiC) power devices were manufactured at X-FAB Texas on 150mm SmartSiC wafers. Soitec will offer X-FAB's customers easy access to the SmartSiC substrate through a joint supply chain consignment model. SmartSiC is a proprietary Soitec technology based on the company's SmartCut™ process, in which a thin layer of a high-quality monocrystalline (mono-SiC) 'donor' wafer is split off and bonded to a low resistivity polycrystalline (poly-SiC) 'handle' wafer. The resulting substrate offers improved device performance and manufacturing yields. The process allows multiple re-uses of a single donor wafer, significantly reducing cost and related CO<sub>2</sub> emissions. | 22.05.2024 12:00:00 | May | news_2024-06-01_7.jpg | \images\news_2024-06-01_7.jpg | https://www.xfab.com/news/details/article/x-fab-and-soitec-team-up-to-offer-smartsictm-at-lubbock-plant-usa | xfab.com |
| Demonstration Board kickstarts dual-motor Designs for Industrial and Consumer Products | STMicroelectronics' EVSPIN32G4-DUAL demonstration ... | 11934 | Product Release | Demonstration Board kickstarts dual-motor Designs for Industrial and Consumer Products | STMicroelectronics' EVSPIN32G4-DUAL demonstration board controls two motors from a single STSPIN32G4 integrated driver, accelerating product development and simplifying the PCB design and bill of materials. The demonstration board leverages an advanced three-phase gate driver integrated in the STSPIN32G4 and an additional STDRIVE101 gate driver to control two three-phase inverters delivering up to 10A with a maximum supply voltage of 74V. Both gate drivers have their own bootstrap circuitry and safety features including drain-source voltage monitoring, cross-conduction prevention, several thermal protection mechanisms, and under-voltage lockout (UVLO). EVSPIN32G4-DUAL also leverages the STSPIN32G4's built-in power-management circuitry, permitting a compact design with a low BOM that is easy to procure and permits rapid assembly in production. The power management includes a programmable buck converter for gate drivers VCC supply, a low-dropout linear regulator, and a special regulator with low quiescent current to supply the MCU during standby. | 22.05.2024 11:30:00 | May | news_2024-06-01_14.jpg | \images\news_2024-06-01_14.jpg | https://newsroom.st.com/media-center/press-item.html/n4629.html | st.com |
| GaN System-in-Package Targeting Rapid Consumer Device Charging | Wise-integration and Leadtrend Technology Corporat... | 11931 | Product Release | GaN System-in-Package Targeting Rapid Consumer Device Charging | Wise-integration and Leadtrend Technology Corporation announced the release of a GaN system-in-package (SiP) supporting consumer electronics applications. Their collaboration's targeted application is a 65-watt USB PD adapter for high-speed charging of smartphones, laptops and other devices. The LD966LGQALVE High Voltage Multi-Mode PWM Controller of Flyback with GaN integrated includes Leadtrend's silicon die flyback controller and Wise-integration's 650V e-mode gallium-nitride (GaN) transistor die in a SiP. The SiP has passed 1,000 hours of operating life tests (OLT). The LD966L is green-mode PWMIC built-in with brown-in/out functions of a QFN8X8 package. It minimizes the component count, circuit space, and reduces overall material cost for the power applications. It features HV start, green-mode power-saving operation, soft-start functions to minimize power loss and enhance system performance. The LD966LGQALVE Evaluation Board features an overall peak efficiency of 93.02% and a power density of 22.7 W/in<sup>3</sup>. | 22.05.2024 08:30:00 | May | news_2024-06-01_11.jpg | \images\news_2024-06-01_11.jpg | https://wise-integration.com/wise-integration-leadtrend-technology-introduce-gan-system-in-package-targeting-rapid-consumer-device-charging/ | wise-integration.com |
| Support for 300mm Smart Power Process | In a joint development project spanning around one... | 11926 | Industry News | Support for 300mm Smart Power Process | In a joint development project spanning around one year, important progress was made in the production of "Smart power technologies". Fraunhofer IPMS provided significant support to the semiconductor manufacturer Infineon by supplying selected process modules within the entire CMOS process value chain on 300 mm wafers. The collaboration played a key role in the process development for the factory expansion at Infineon Dresden. Over 2000 wafers were successfully processed as part of this collaboration. The wafers were exchanged several times between Fraunhofer IPMS and Infineon Dresden to ensure optimal use of resources and optimum integration into the production lines. The teams are now well attuned to each other. The cooperation was always focused on achieving results, and the colleagues at Infineon were very accommodating towards Fraunhofer's ideas. With the construction of the new Smart Power Fab, Infineon is making one of the largest single investments in its history. The aim of the semiconductor manufacturer is to increase the speed at which it expands its semiconductor production capacities and to further strengthen Europe as a chip manufacturing location. This is an important contribution to meeting the growing global demand for semiconductors - for example for applications to generate renewable energy, for use in data centers and for electromobility. | 21.05.2024 11:00:00 | May | news_2024-06-01_6.jpg | \images\news_2024-06-01_6.jpg | https://www.ipms.fraunhofer.de/en/press-media/press/2024/300-mm-process-development-of-smart-power-technologies.html | ipms.fraunhofer.de |
| 1200 V SiC MOSFETs in SMD Packaging | Nexperia announced that it is now offering its 120... | 11933 | Product Release | 1200 V SiC MOSFETs in SMD Packaging | Nexperia announced that it is now offering its 1200 V silicon carbide (SiC) MOSFETs in D²PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ R<sub>DSon</sub> values. This announcement follows on from Nexperia's late-2023 release of two discrete SiC MOSFETs in 3 and 4-pin TO-247 packaging and is the latest offering in a series which will see its SiC MOSFET portfolio swiftly expand to include devices with R<sub>DSon</sub> values of 17, 30, 40, 60 and 80 mΩ in flexible package options. With the release of the NSF0xx120D7A0, Nexperia is addressing the growing market demand for high performance SiC switches in SMD packages like D<sup>2</sup>PAK-7, which is becoming increasingly popular in various industrial applications including electric vehicle (EV) charging (charge pile, offboard charging), uninterruptible power supplies (UPS) and inverters for solar and energy storage systems (ESS). It is also further testimony to Nexperia's successful strategic partnership with Mitsubishi Electric Corporation (MELCO), which has seen the two companies join forces to push the energy efficiency and electrical performance of SiC wide bandgap semiconductors to the next level, while additionally future-proofing production capacity for this technology in response to ever growing market demand. | 21.05.2024 10:30:00 | May | news_2024-06-01_13.jpg | \images\news_2024-06-01_13.jpg | https://www.nexperia.com/about/news-events/press-releases/Nexperia-s-premier-SiC-MOSFETs-now-come-in-the-increasingly-popular-D2PAK-7 | nexperia.com |
| Single-Board Plug-and-Play Gate Drivers | Power Integrations launched the SCALE-iFlex™... | 11930 | Product Release | Single-Board Plug-and-Play Gate Drivers | Power Integrations launched the SCALE-iFlex™ XLT family of dual-channel plug-and-play gate drivers for operation of single LV100 (Mitsubishi), XHP™ 2 (Infineon), HPnC (Fuji) and equivalent semiconductor modules up to 2300 V blocking voltage for wind, energy storage and solar renewable energy installations. This single-board driver enables active thermal management of inverter modules for improved system utilization and reduces the bill-of-material count for increased reliability. This compact SCALE-iFlex XLT gate drivers fit inside the outline of the module, allowing the drivers to be mounted on the module, which gives converter system designers a high degree of mechanical design freedom. SCALE-iFlex XLT dual-channel gate drivers feature Negative Temperature Coefficient (NTC) data reporting – an isolated temperature measurement of the power module – which allows accurate thermal management of converter systems. This enables system designers to optimize thermal design and obtain a 25 to 30 percent converter power increase from the same hardware. The isolated NTC readout also reduces hardware complexity, eliminating multiple cables, connectors and additional isolation barrier crossing circuits. The gate drivers employ Power Integrations' SCALE-2 chip set which minimizes component count, enhancing reliability. The gate driver board also protects the power switches in the event of a short-circuit. | 21.05.2024 07:30:00 | May | news_2024-06-01_10.jpg | \images\news_2024-06-01_10.jpg | https://investors.power.com/news/news-details/2024/Power-Integrations-Launches-Single-Board-Plug-and-Play-Gate-Drivers-for-1.2-kV-to-2.3-kV-New-Dual-IGBT-Modules/default.aspx | power.com |
| 500kW DC Ultra-fast Electric Vehicle Charger | Delta announced a Smart EV Charging Infrastructure... | 12025 | Product Release | 500kW DC Ultra-fast Electric Vehicle Charger | Delta announced a Smart EV Charging Infrastructure Solutions, tailored for commercial, public, and fleet applications. These include the UFC 500, a 500kW DC ultra-fast heavy-duty and public electric vehicle (EV) charger. It can charge one heavy duty electric vehicle (e-truck/e-Bus) with large battery capacity at 460 kW power within 2 hours, which, on average, result in a driving range for a full-day operation. It enables ultra-fast charging of heavy-duty vehicles at 460 kW, and supports the simultaneous charging of two modern EVs at up to 250 kW each. Delta's patented internal circuit topology results in a very compact, lightweight power module, which even one person will find easy to handle. The charger is built to withstand demanding conditions with its robust, all-weather design and features convenient user-focused innovations like a sophisticated cable management system and integrated payment solutions. By addressing the critical needs of charging operators and end-users alike, the UFC 500 stands a high-performing charging station on the market, ready to meet the surging demand for EVs across all segments. | 21.05.2024 06:30:00 | May | news_2024-07-15_10.jpg | \images\news_2024-07-15_10.jpg | https://www.delta-emea.com/en-gb/news/delta-unveils-new-500kw-dc-ultra-fast-ev-charger-ufc-500-at-nordic-ev-summit-2024 | delta-emea.com |
| Line of Radiation Tolerant Analog Components | Apex Microtechnology is announces the launch of it... | 11929 | Product Release | Line of Radiation Tolerant Analog Components | Apex Microtechnology is announces the launch of its radiation tolerant (RT) product portfolio. After extensive market evaluation and radiation test campaigns, Apex brings a range of military-grade RT devices to serve the space market and applications in radiation environments. The Apex rad tolerant portfolio will initially feature two operational amplifiers, PA07R and PA08R. Engineers designing with analog components for space applications will find these devices to be in-line with SWaP requirements, as well as feature little to no lead times.<br>The PA08R is a high voltage power operational amplifier designed for output voltage swings up to ±145V with a dual supply, or a 290V single supply. This power amplifier delivers high accuracy via a cascode input circuit configuration. All internal biasing is referenced to a zener diode fed by a FET constant current source. Target applications for this POA include electrostatic transducers, deflection circuits and programmable power supplies. The PA08R is a hybrid product design housed in an electrically isolated, hermetically sealed 8-pin TO-3 metal package. For continuous operation under load, a heatsink of proper rating is recommended.<br>The PA07 is a high voltage, high output current operational amplifier designed to drive resistive, inductive, and capacitive loads. For optimum linearity, especially at low levels, the output stage is biased for class A/B operation using a thermistor compensated base-emitter voltage multiplier circuit. A thermal shutoff circuit protects against overheating and minimizes heatsink requirements for abnormal operating conditions. The safe operating area (SOA) can be observed for all operating conditions by selection of user programmable current limiting resistors. The amplifier is internally compensated for all gain settings. For continuous operation under load, a heatsink of proper rating is recommended. | 21.05.2024 06:30:00 | May | news_2024-06-01_9.jpg | \images\news_2024-06-01_9.jpg | https://www.apexanalog.com/press/product_news_radiation-tolerant.html | apexanalog.com |
| Call for Papers | APEC 2025 will take place March 16-20, 2025 at the... | 11923 | Event News | Call for Papers | APEC 2025 will take place March 16-20, 2025 at the Georgia World Congress Center in Atlanta, GA, and the Technical Session digest submissions will be opening in a few weeks for APEC 2025. The organizer assures that APEC 2025 will continue the long-standing tradition of addressing issues of immediate and long-term interest to the practicing power electronics engineering community. Outstanding technical content is promised to be provided at one of the lowest registration costs of any IEEE conference. To be considered as a Technical Session paper for APEC 2025, it is advised that the applicant's digest/paper should address the following: The challenge to be addressed by the paper as well as the major results and how this differs from the most relevant existing literature. Papers presented at APEC must be original material and not have been previously presented or published. The principal criteria in selecting digests will be the usefulness of the work to the practicing power electronic professional. Reviewers value evidence of completed experimental work. Authors should obtain any necessary company and governmental clearance prior to submission of digests. | 20.05.2024 07:00:00 | May | news_2024-06-01_2.jpg | \images\news_2024-06-01_2.jpg | https://x9h8yf9ab.cc.rs6.net/tn.jsp?f=001t4WCUY613RLU2gD1X_r6R-RW1DJ4GzpP9TClknaAFviLd7ZIuuwysIAlj_xj8O3uovW26xX0x7e4Wmr0AidrbsCYpOAJhiLt5S95cfZnQosmBHRuNU2tSMbI_R_oS7qv8wDqcz6Asr9ZOAkthHU9oITsWvG0E0qhhYPojznNWvUtYaO5kags7wplgZaUCCRG9PNoS_NQ_tfYq2u6kl4spm50QLIf7WQwqKC-vFq-j9B6e4z3MfkXRw==&c=6N1YA1MUwc4H1LRtGKPLalsAW5wUuJD1F4p1xQOQY8WHYCHrNXzZWg==&ch=k2pTc4uSGAY5frLwBTJc8veEbbRfvZdCN8fm2Uw8w5aZSGJNUQv7bg== | apec-conf.org |
| New strategic Partnership | Finepower and Sanan Semiconductor signed a coopera... | 11922 | Industry News | New strategic Partnership | Finepower and Sanan Semiconductor signed a cooperation contract in May 2024. "We are very pleased that we gained with Finepower a trustworthy partner with an extremely high level of technical understanding," said Michael Sleven, Vice President of Sanan Europe GmbH. "We have one of the biggest vertical inline factories for SiC in the world, covering substrate materials, epitaxial growth, chip manufacturing, packaging, testing and other sections. Also, our GaN products are made on our own SiC substrates. So, we have every process step in our own hands." In China Sanan has been very active for quite a while, and now the company is expanding to Europe. Further details can be found in the VIP interview published in Bodo's Power Systems in April 2024. Sanan combines full-flow manufacturing services for long crystal, substrate, epitaxial, chip, sealing and testing. Sanan is able to control all steps of the production including quality and delivery. The scale of production capacity and technological level are competitive and will strongly guarantee the supply and meet the market demands. "Sanan's portfolio of SiC MOSFETs/diodes, SiC substrates, automotive grade SiC module foundry fits perfectly to our strategy." stated Reiko Winkler, General Manager of Finepower, during the contract signing event. Finepower is an international operating engineering and distribution company with focus on modern power electronic applications. | 17.05.2024 06:00:00 | May | news_2024-06-01_1.jpg | \images\news_2024-06-01_1.jpg | https://www.finepower.com/en/ | finepower.com |
| New Director Strategic Market Development EMEA | Schurter welcomed Natalie Bird to its team. Natali... | 11943 | People | New Director Strategic Market Development EMEA | Schurter welcomed Natalie Bird to its team. Natalie Bird took up the newly created position of Director Strategic Market Development EMEA. She will play a pivotal role in advancing the market strategies across the region. With nearly two decades of experience at TE Connectivity, where she held various key roles including Key Account and Global Account Management, Natalie Bird's responsibilities will include implementing sales and product strategies to maximize revenue growth, account penetration and enhance customer satisfaction. Most recently, Natalie Bird took positions within Aptiv and Schaltbau. | 15.05.2024 11:00:00 | May | news_2024-06-15_6.jpg | \images\news_2024-06-15_6.jpg | https://www.schurter.com/en/news/new-director-of-strategic-market-development-emea | schurter.com |
| Series of Ultra-Low Bias Current / High-Efficiency Zener Diodes | Taiwan Semiconductor announces its series of Zener... | 11932 | Product Release | Series of Ultra-Low Bias Current / High-Efficiency Zener Diodes | Taiwan Semiconductor announces its series of Zener diodes with a selection of devices providing regulated voltages from 1.8VDC to 39VDC, all with ultra-low bias current (I<sub>ZT</sub>) of 50µA and maximum power dissipation (P<sub>D</sub>) of 500mW. These devices are ideal for applications where exceptionally low bias current is needed (to extend battery life), essential (for energy harvesting), or desirable (in lighting and IIoT) – while still providing uncompromised Zener regulation. The 39 individual Zener diodes in the series with part numbers ranging from MMSZ4668 to MMSZ41716 are all packaged in an industry-standard, low-profile, SOD-123 surface-mount package. With their low I<sub>ZT</sub>, these devices are a straightforward upgrade to existing designs (without the need for PCB modifications), as well as for new designs. | 15.05.2024 09:30:00 | May | news_2024-06-01_12.jpg | \images\news_2024-06-01_12.jpg | https://www.taiwansemi.com/en/500mw-low-izt-1-8v-39v-surface-mount-zeners/ | taiwansemi.com |
| Monolithic Automotive asynchronous Buck Converters | STMicroelectronics has introduced automotive-quali... | 11955 | Product Release | Monolithic Automotive asynchronous Buck Converters | STMicroelectronics has introduced automotive-qualified step-down synchronous DC/DC converters that save space and ease integration in applications including body electronics, audio systems, and inverter gate drivers. The A6983 converter series comprises of six non-isolated step-down converters in low-consumption and low-noise configurations and the A6983I isolated buck converter. With compensation circuitry on-chip, these monolithic devices need only a few external components including filtering, feedback, and a transformer with the A6983I. The non-isolated A6983 converters can supply up to 3 A load current and achieve 88% typical efficiency at full load. The low-consumption variants (A6983C) are optimized for light-load operation, with high efficiency and low output ripple. The low-noise A6983N variants operate with constant switching frequency and minimize output ripple across the load range for optimum performance in applications such as audio-system power supplies. Both types offer a choice of 3.3 V, 5.0 V, and adjustable output voltage from 0.85 V to V<sub>IN</sub>. The A6983I is a 10 W iso-buck converter with primary-side regulation that eliminates the need for an optocoupler. Suited for use as an isolated gate driver for IGBTs or silicon-carbide (SiC) MOSFETs in traction inverters and on-board chargers (OBCs), this converter allows accurate adjustment of the primary output voltage. The transformer turns ratio determines the secondary voltage. All isolated and non-isolated variants have a low quiescent operating current of 25 µA and a power-saving shutdown mode that draws less than 2 µA. | 14.05.2024 14:30:00 | May | news_2024-06-15_18.jpg | \images\news_2024-06-15_18.jpg | https://newsroom.st.com/media-center/press-item.html/n4628.html | st.com |
| LQ Relay for high inrush Currents and PiP Reflow Processing | Panasonic Industry's LQ Series of electromechanica... | 11951 | Product Release | LQ Relay for high inrush Currents and PiP Reflow Processing | Panasonic Industry's LQ Series of electromechanical Power Relays are designed for a vast field of applications. With a profile of 10 mm (W) x 20 mm (L) x 16 mm (H) these relays offer flexibility in mounting orientations. So far, the LQ Series shows a high switching capacity of up to 10 A and is available in six nominal coil voltages ranging from 5 V to 24 V, featuring 1 Form A or 1 Form C contact arrangements. The sealed construction provides enhanced environmental protection, along with a high surge withstand voltage and dielectric strength, making them well-suited for high voltage applications in ambient temperature usage, up to 85 °C and 105 °C. The ALQ6 is designed to meet the escalating demand for high inrush current capability in automated systems, particularly in motor and LED lighting control applications by handling an inrush current of up to 40 A for 100 µs, making it an suitable for capacitive loads. Now the LQ series is available in a reflow-processable variant. | 14.05.2024 10:30:00 | May | news_2024-06-15_14.jpg | \images\news_2024-06-15_14.jpg | https://industry.panasonic.eu/company/newsroom/multitalented-lq-relay-now-ready-high-inrush-currents-and-pip-reflow-processing | industry.panasonic.eu |
| R&D Manager returns to the Team | Danisense welcomes back Petar Ljushev as R&D Manag... | 11905 | People | R&D Manager returns to the Team | Danisense welcomes back Petar Ljushev as R&D Manager. Petar Ljushev had already worked for Danisense for nearly four years previously between 2019 and 2022. He holds a PhD in the field of power electronics from the Technical University of Denmark (DTU), and has many years experience in industrial companies designing power electronics, large power resistors and resistor systems for demanding applications. In his new role at Danisense, he will be focusing on developing and launching new innovative current sense transducer products based on the company's successful and proven closed loop Flux Gate technology. | 08.05.2024 07:00:00 | May | news_2024-05-15_2.jpg | \images\news_2024-05-15_2.jpg | https://danisense.com/ | danisense.com |
| Low-side Gate Driver for SiC MOSFETs and High-power IGBTs | Littelfuse has launched the IX4352NE low-side SiC ... | 11921 | Product Release | Low-side Gate Driver for SiC MOSFETs and High-power IGBTs | Littelfuse has launched the IX4352NE low-side SiC MOSFET and IGBT gate driver, which is specifically designed to drive SiC MOSFETs and high-power IGBTs in industrial applications. The key differentiator of the IX4352NE lies in its separate 9 A source and sink outputs, which enable tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator also provides a user-selectable negative gate drive bias for improved dV/dt immunity and faster turn-off. The devices also offer an internal negative charge pump regulator, which eliminates the need for an external auxiliary power supply or DC/DC converter. This feature is particularly valuable for turning off SiC MOSFETs, saving valuable space typically required for external logic level translator circuitry. The logic input's compatibility with standard TTL or CMOS logic levels further enhances space-saving capabilities. The IX4352NE, which operates in the voltage range (VDD - VSS) of up to 35 V, is suited for driving SiC MOSFETs in various industrial applications such as on-board and off-board chargers, PFCs, DC/DC converters, motor controllers, and industrial power inverters. Built-in protection features such as desaturation detection (DESAT) with soft shutdown sink driver, Under Voltage Lockout (UVLO), and thermal shutdown (TSD) ensure the protection of the power device and the gate driver. The integrated open-drain FAULT output signals a fault condition to the MCU, enhancing safety and reliability. | 07.05.2024 16:30:00 | May | news_2024-05-15_18.jpg | \images\news_2024-05-15_18.jpg | https://www.littelfuse.com/about-us/news/news-releases/2024/littelfuse-unveils-ix4352ne-low-side-gate-driver-for-sic-mosfets-and-high-power-igbts.aspx | littelfuse.com |
| Radiation-tolerant DC/DC Power Converters for new Space Applications | To meet the increased demand for standard space gr... | 11917 | Product Release | Radiation-tolerant DC/DC Power Converters for new Space Applications | To meet the increased demand for standard space grade solutions that are reliable, cost effective and configurable, Microchip has developed a family of Radiation-Tolerant (RT) LE50-28 isolated DC/DC 50 W power converters available in nine variants with single- and triple-outputs ranging from 3.3 V to 28 V. The off-the-shelf LE50-28 family of power converters are designed to meet MIL-STD-461. The power converters have a companion EMI filter and allow for choosing one or three outputs based on the voltage range needed for the end application. This series provides flexibility to parallel up to four power converters to reach 200 W. The family of LE50-28 devices are designed for applications in new space and LEO environments where components must withstand harsh conditions, and they are available in a variety of electrical connection and mounting options. The LE50 series is manufactured with conventional surface mount and thru-hole components on a printed wiring board. This distinction in the manufacturing process can reduce time to market and risks associated with supply chain disruptions. The LE50-28 family offers space-grade radiation tolerance with 50 Krad Total Ionizing Dose (TID) and Single Event Effects (SEE) latch-up immunity of 37 MeV·cm2/mg linear energy transfer. | 07.05.2024 12:30:00 | May | news_2024-05-15_14.jpg | \images\news_2024-05-15_14.jpg | https://www.microchip.com/en-us/about/news-releases/products/radiation-tolerant-dc-dc-50-watt-power-converters | microchip.com |
| Acquisition of Vertical GaN Developer | Power Integrations announced an agreement to acqui... | 11906 | Industry News | Acquisition of Vertical GaN Developer | Power Integrations announced an agreement to acquire the assets of Odyssey Semiconductor Technologies, a developer of vertical gallium-nitride (GaN) transistor technology. The transaction is expected to close in July 2024, after which all key Odyssey employees are expected to join Power Integrations' technology organization. The acquisition supports the company's ongoing development roadmap for its proprietary PowiGaN technology, which is featured in many of the company's product families including InnoSwitch ICs, HiperPFS-5 power-factor-correction ICs and the recently launched InnoMux-2 family of single-stage, multiple-output ICs. The company introduced 900- and 1250-V versions of PowiGaN technology and products in 2023. Commented Dr. Radu Barsan, Power Integrations' vice president of technology: "We are executing on an ambitious roadmap that includes driving toward cost parity with silicon MOSFETs and expanding the voltage and power capabilities of PowiGaN. Our goal is to commercialize a cost-effective high-current and high-voltage GaN technology to support higher-power applications currently served by silicon carbide (SiC), at a much lower cost and higher performance enabled by the fundamental material advantages of GaN over SiC. The experience of the Odyssey team in high-current vertical GaN will augment and accelerate these efforts." | 07.05.2024 08:00:00 | May | news_2024-05-15_3.jpg | \images\news_2024-05-15_3.jpg | https://investors.power.com/news/news-details/2024/Power-Integrations-to-Acquire-the-Assets-of-Odyssey-Semiconductor/default.aspx | power.com |
| SiC and more for Chinese EV Manufacturer | Infineon Technologies will provide silicon carbide... | 11908 | Industry News | SiC and more for Chinese EV Manufacturer | Infineon Technologies will provide silicon carbide (SiC) power modules HybridPACK™ Drive G2 CoolSiC™ and bare die products to Xiaomi EV for its recently announced SU7 until 2027. Infineon's CoolSiC-based power modules allow for higher operating temperatures, "resulting in best-in-class performance, driving dynamics and lifetime". Traction inverters based on the technology can, for example, further increase electric vehicle range. The HybridPACK Drive is Infineon's market-leading power module family for electric vehicles, with almost 8.5 million units sold since 2017. Infineon provides two HybridPACK Drive G2 CoolSiC 1200 V modules for the Xiaomi SU7 Max. In addition, Infineon supplies Xiaomi EV with a broad range of products per car, including, for example, EiceDRIVER gate drivers and more than ten microcontrollers in various applications. The two companies also agreed to further cooperate on SiC automotive applications. | 06.05.2024 10:00:00 | May | news_2024-05-15_5.jpg | \images\news_2024-05-15_5.jpg | https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFXX202405-101.html | infineon.com |
| High-Capacity Regenerative Electronic Load | The PXZ series of efficient, reliable, high-capaci... | 11912 | Product Release | High-Capacity Regenerative Electronic Load | The PXZ series of efficient, reliable, high-capacity regenerative electronic loads from Kikusui has a rated power of 20 kW in 3U. In addition to the constant-current, constant-resistance, constant-voltage, and constant-power operating modes, this series has an I-V characteristic function that allows the user to set arbitrary I-V characteristics for each CC and CV operating mode. The series is also equipped with various functions, such as sequence, pre-charge, synchronous operation, pulse, sine, and VMCB functions. LAN, USB, and RS232C communication functions are included as standard, allowing direct integration into various evaluation systems. The PXZ series is scalable, and its capacity can be increased up to 200 kW when operating in parallel (up to 10 units). | 06.05.2024 06:30:00 | May | news_2024-05-15_9.jpg | \images\news_2024-05-15_9.jpg | https://kikusuiamerica.com/products-index/electronic-load/pxz/ | kikusuiamerica.com |
| Semiconductor Processing to Packaging Center to be built in New York State University | Semikron Danfoss now collaborates with SUNY Polyte... | 11907 | Industry News | Semiconductor Processing to Packaging Center to be built in New York State University | Semikron Danfoss now collaborates with SUNY Polytechnic Institute and other industry partners to build a Semiconductor Processing to Packaging Center that will focus on research, education and training. The facility will be established at the Semikron Danfoss office in Utica, located in the Quad C building on the SUNY Poly campus and will train 100-150 students per year in semiconductor processing, packaging and testing capabilities. The center will be funded in part with the $4 million Empire State Development grant as well as a larger economic development package announced last fall. In addition to supplying space for two classrooms and a 5,000 square-foot clean room, Danfoss will provide multiple pieces of equipment used in the semiconductor manufacturing process. The Center will allow for both silicon device processing as well as SiC, GaN, AlN and their alloys, and Ga2O3 device processing for power electronics, optoelectronics and clean energy applications as well as their unique packaging needs. It is anticipated that the students will be both traditional and non-traditional students, seeking either degrees or certificates. The goal of the Center is to increase graduates across advanced manufacturing disciplines by 10 percent in the next four years. The Center's curriculum will offer several workforce development training and upskilling pathways for industry partners and their employees as well as those seeking to gain entrance into the workforce. | 02.05.2024 09:00:00 | May | news_2024-05-15_4.jpg | \images\news_2024-05-15_4.jpg | https://www.danfoss.com/en-us/about-danfoss/news/dps/semikron-danfoss-partners-with-suny-poly-to-establish-semiconductor-processing-to-packaging-research-education-training-center/ | danfoss.com |
| Solid-State High-Voltage Auxiliary E-Fuse Reference Design | Mouser is now stocking the MSDR-EFUSE high-voltage... | 11920 | Product Release | Solid-State High-Voltage Auxiliary E-Fuse Reference Design | Mouser is now stocking the MSDR-EFUSE high-voltage auxiliary E-Fuse reference design from Microchip Technology. Leveraging Microchip's proven 700 V and 1200 V Silicon Carbide mSiC™ products and other company technologies, this high-voltage auxiliary E-fuse solid-state relay demonstrator board offers designers a total system solution (TSS) to diagnose the status of current, temperature and bias supply measurements of automotive and industrial power management applications all in one reference design to avoid sourcing individual parts. The MSDR-EFUSE reference design incorporates an active circuit protection device with an integrated SiC FET and 8-bit MCU. This high-voltage, solid-state relay reference design features over-current protection (programmable in software), a configurable current-limit profile, up to a 30 A continuous output load current, and two modes of short-current detection – edge-triggered and ride-through edge-triggered. Even though the demonstrator board is equipped with only AEC-qualified components designed for automotive and electric vehicle battery-based applications (400 V or 800 V), the board also implements a time-current characteristic (TCC) curve based on thermal characterization that helps migrate to non-automotive applications such as DC solid-state circuit breakers. The MSDR-EFUSE features a 10 µs short-circuit withstand time, up to a 20 kHz switching frequency and a LIN communication interface for configurability and diagnostics. Target applications include (H)EVs, DC smart grids and industrial charging stations. | 30.04.2024 15:30:00 | Apr | news_2024-05-15_17.jpg | \images\news_2024-05-15_17.jpg | https://eu.mouser.com/newsroom/publicrelations-microchip-efuse-refdesign-2024final/ | mouser.com |
| Interactive Content Series Focused on EV Electrification | Mouser Electronics has set up an interactive conte... | 11911 | Industry News | Interactive Content Series Focused on EV Electrification | Mouser Electronics has set up an interactive content series in collaboration with Littelfuse: Electrifying the Future of eMobility features articles and infographics exploring the challenges of creating different charging solutions for a wide range of use cases. Electrification of small passenger vehicles, scooters, and commercial EVs can vary greatly. Off-road electrified vehicles used in agriculture or construction, such as tractors and bulldozers, also need more robust charging and storage capabilities than passenger vehicles. Circuit protection, battery management, and improving efficiency in electrical systems are discussed, as are the rising expectations for the occupant experience, such as advanced infotainment systems, driver assist, and vehicle autonomy. The content series also showcases many key products from Littelfuse that play important roles in addressing the design challenges of vehicle electrification. For example, Littelfuse's SiC-MOSFETs are key in managing power more efficiently within the vehicle's electrical system, offering various advantages over traditional silicon-based components. The higher efficiency of SiC-MOSFETs results in less power lost through heat. This reduces the need for extensive cooling systems, making them more suitable for the demanding environments of commercial EVs. | 25.04.2024 13:00:00 | Apr | news_2024-05-15_8.jpg | \images\news_2024-05-15_8.jpg | https://eu.mouser.com/littelfuse-electrifying-emobility-ebook/ | mouser.com |
| Lithium-Ion Battery Separator Plant in Canada | Asahi Kasei announced it will construct an integra... | 11909 | Industry News | Lithium-Ion Battery Separator Plant in Canada | Asahi Kasei announced it will construct an integrated plant in Ontario, Canada for the base film manufacturing and coating of HiporeTM wet-process lithium-ion battery (LIB) separator. In relation to this plant, Asahi Kasei has concluded a basic agreement with Honda Motor, and the two parties are currently studying joint investment. Also, with regard to the Canadian plant, it has been agreed that Asahi Kasei Battery Separator Corp., which is scheduled to be established in October 2024, will receive funding from the Development Bank of Japan (DBJ) through the issuance of preferred shares. Furthermore, receipt of financial support from the federal government of Canada and the provincial government of Ontario regarding this investment is expected. The total investment will be slightly higher than 1 billion Euros. Starting 2027 the plant is expected to produce approximately 700 million square meters of coated films. | 25.04.2024 11:00:00 | Apr | news_2024-05-15_6.jpg | \images\news_2024-05-15_6.jpg | https://asahi-kasei.eu/lithium-ion-battery-separator-plant/ | asahi-kasei.eu |
| Integrated GaN System-in-Packages | Transphorm and Weltrend Semiconductor announced av... | 11913 | Product Release | Integrated GaN System-in-Packages | Transphorm and Weltrend Semiconductor announced availability of two GaN System-in-Packages (SiPs). When combined with Weltrend's GaN SiP announced last year, the devices establish the first SiP product family based on Transphorm's SuperGaN® platform. The SiPs - WT7162RHUG24B and WT7162RHUG24C - integrate Weltrend's high frequency multi-mode (QR/Valley Switching) Flyback PWM controller with Transphorm's 150 mΩ and 480 mΩ SuperGaN FETs respectively. Like their 240 mΩ predecessor (WT7162RHUG24A), the devices pair with USB PD or programmable power adapter controllers to provide a total adapter solution. Other features include the UHV valley tracking charge mode, adaptive OCP compensation, and adaptive green mode control that allow engineers to design power supplies faster and with fewer components. Some key advantages of Transphorm's normally-off d-mode SuperGaN platform include its robustness (+/- 20 V gate margin with a 4 V noise immunity) and reliability (< 0.05 FIT) with the ability to increase power density by 50% over silicon. Weltrend's SiP designs complements this to create a near plug-and-play solution that speeds design while reducing form factor size. | 24.04.2024 07:30:00 | Apr | news_2024-05-15_10.jpg | \images\news_2024-05-15_10.jpg | http://www.weltrend.com/en-global/news/detail/837/30 | weltrend.com |
| Spectrum Analyzer Software for Analysis of up to eight simultaneous Signals | Tektronix released version 5.4 of its SignalVu Spe... | 11918 | Product Release | Spectrum Analyzer Software for Analysis of up to eight simultaneous Signals | Tektronix released version 5.4 of its SignalVu Spectrum Analyzer Software for multi-channel modulation analysis of up to eight signals in parallel. Engineers can use this software to turn their existing oscilloscope into a comprehensive wireless system tester, instead of investing in a dedicated tester such as a vector signal analyzer. It is particularly valuable for applications requiring time-domain analysis with RF measurements. The package runs on Tektronix 5 Series MSO, 6 Series MSO or DPO70000 oscilloscopes. It addresses the complex needs of multi-signal, multi-standard, or multi-Device Under Test (DUT) scenarios, proving itself as an indispensable tool for modern RF and wireless research and development. Additionally, the introduction of shared-acquisition multi-signal support enables the simultaneous analysis of signals that are frequency-separated yet input through the same scope channel. | 23.04.2024 13:30:00 | Apr | news_2024-05-15_15.jpg | \images\news_2024-05-15_15.jpg | https://www.tek.com/en/news/tektronix-unveils-signalvu-spectrum-analyzer-software-version-uk | tek.com |
| Strategic Partnership to drive Zero-Emission Bus Transport in Europe | Daimler Buses and BMZ have entered into a strategi... | 11892 | Industry News | Strategic Partnership to drive Zero-Emission Bus Transport in Europe | Daimler Buses and BMZ have entered into a strategic partnership for the development and supply of the next generation of e-bus batteries. Together with Daimler Buses, BMZ will further develop the existing battery technology specifically for the requirements of electrically powered buses. The new battery generation NMC4 – succeeding the current NMC3 technology – will combine high energy density, resulting in a longer range for e-buses, with an ultra-long cycle life. Customers of Daimler Buses will be able to use NMC4 batteries from the middle of the decade. Daimler Buses is pursuing an e-roadmap across all segments: Electrically powered city buses have already been in series production since 2018; intercity e-buses are to follow as of the middle of the decade and electrified coaches by 2030. With this, Daimler Buses aims to offer locally CO2-neutral models based on batteries or hydrogen in every segment by 2030. | 23.04.2024 13:00:00 | Apr | news_2024-05-01_8a.jpg | \images\news_2024-05-01_8a.jpg | https://bmz-group.com/images/PDF-Downloads/press-release/202240422_FINAL_Press_news_Daimler_Buses_BMZEN.pdf | bmz-group.com |
| Energy-Saving DC/DC Converter ICs in TSOT23 Package | ROHM has developed four compact DC/DC step-down co... | 11899 | Product Release | Energy-Saving DC/DC Converter ICs in TSOT23 Package | ROHM has developed four compact DC/DC step-down converter ICs suitable for consumer and industrial applications, including refrigerators, washing machines, PLCs, and inverters. ROHM is expanding the lineup which includes the BD9E203FP4-Z, a 2A buck converter with switching frequency of 350kHz. The company has developed products that achieve higher efficiency in an even smaller package than existing SOP-J8 (JEDEC standard: SOIC8 equivalent) products. These converter ICs deliver an output current of 1 A to 3 A in the compact TSOT23 package (2.8 mm × 2.9 mm). This reduces component area by up to 72% compared to the general SOP-J8 package (4.9 mm × 6.0 mm), contributing to the miniaturization of power supply blocks. On top, adopting a flip chip on lead frame TSOT23 package design enables high-efficiency operation by eliminating bond wire resistance. The BD9E105FP4-Z, BD9E202FP4-Z, and BD9E304FP4-LBZ also utilize a COT control mode during light load operation. As a result, efficiency during light load operation is improved over standard products, making them well-suited for applications requiring low standby power consumption. In addition to the ICs, evaluation boards together with various support tools are available that enable immediate evaluation during application design. | 23.04.2024 10:30:00 | Apr | news_2024-05-01_15a.jpg | \images\news_2024-05-01_15a.jpg | https://www.rohm.com/news-detail?news-title=2024-04-23_news_dcdc&defaultGroupId=false | rohm.com |
| High-Temperature Inductors are resistant to Thermal Aging | Würth Elektronik supplements its molded power indu... | 11897 | Product Release | High-Temperature Inductors are resistant to Thermal Aging | Würth Elektronik supplements its molded power inductors series with the high-temperature versions WE-MAPI and WE-LHMI. The inductors can be used continuously at high rated currents in a temperature range from -55 °C to +150 °C. The compact components have been tested for thermal aging for over 1000 hours at 200 ºC and are qualified to AEC-Q200. High temperatures in inductors with an iron alloy magnetic core result in thermal aging phenomena. Core losses rise sharply and efficiency drops. Aging can lead to increased self-heating in the component, which in turn exacerbates thermal aging. By expanding its inductor series, Würth Elektronik offers power inductors that are not only unaffected by thermal aging but also do not suffer any performance loss. The SMT power inductors boast low losses, high efficiency, lightweight design, and a low package profile. Their high-current-carrying capacity and capability of handling high transient current peaks can be utilized in applications such as DC/DC converters for high currents in power supplies or for field programmable gate arrays (FPGA), point of load (POL) converters or CPU/RAM power supplies. | 23.04.2024 08:30:00 | Apr | news_2024-05-01_13a.jpg | \images\news_2024-05-01_13a.jpg | https://www.we-online.com/en/news-center/press?d=thermal-aging | we-online.com |
| Measurement Facility in Bengaluru/India | Rohde & Schwarz has inaugurated a facility center ... | 11891 | Industry News | Measurement Facility in Bengaluru/India | Rohde & Schwarz has inaugurated a facility center in Bengaluru's Manyata Tech Park, housing R&D, system integration as well as calibration and repair services. For Rohde & Schwarz, India is not merely a growth market but a vital component of its global strategy. The R&D team in Bengaluru is involved in developing next generation. The facility houses an ISO 9001 and ISO17025 (NABL) accredited calibration and repair service center, offering precision services to meet the rigorous quality standards of the industry. Furthermore, the facility will also encompass sales, applications, systems integration and a dedicated demo display area showcasing various test and measurement equipment and test solutions. | 22.04.2024 12:00:00 | Apr | news_2024-05-01_7a.jpg | \images\news_2024-05-01_7a.jpg | https://www.rohde-schwarz.com/uk/about/news-press/all-news/rohde-schwarz-expands-footprint-in-india-by-opening-new-state-of-the-art-facility-in-bengaluru-press-release-detailpage_229356-1490561.html | rohde-schwarz.com |
| Silicon Carbide Wafer Supply Agreement | ROHM and STMicroelectronics announced the expansio... | 11887 | Industry News | Silicon Carbide Wafer Supply Agreement | ROHM and STMicroelectronics announced the expansion of the existing multi-year, long-term 150 mm silicon carbide (SiC) substrate wafers supply agreement with SiCrystal, which is a ROHM group company. The multi-year agreement governs the supply of larger volumes of SiC substrate wafers manufactured in Nuremberg, Germany, for a minimum expected value of $230 million. Geoff West, EVP and Chief Procurement Officer, STMicroelectronics, commented "This expanded agreement with SiCrystal will bring additional volumes of 150mm SiC substrate wafers to support our devices manufacturing capacity ramp-up for automotive and industrial customers worldwide. It helps strengthen our supply chain resilience for future growth, with a balanced mix of in-house and commercial supply across regions". "SiCrystal is a group company of ROHM, a leading company of SiC, and has been manufacturing SiC substrate wafers for many years. We are very pleased to extend this supply agreement with our longstanding customer ST. We will continue to support our partner to expand SiC business by ramping up 150mm SiC substrate wafer quantities continuously and by always providing reliable quality". said Dr. Robert Eckstein, President and CEO of SiCrystal, a ROHM group company. | 22.04.2024 08:00:00 | Apr | news_2024-05-01_3a.jpg | \images\news_2024-05-01_3a.jpg | https://www.rohm.com/news-detail?news-title=2024-04-22_news&defaultGroupId=false | rohm.com |
| Power Factor Correction Chokes | ITG Electronics has introduced a line of power fac... | 11903 | Product Release | Power Factor Correction Chokes | ITG Electronics has introduced a line of power factor correction (PFC) chokes whose slim design enables engineers to incorporate them into tight spaces. The company's PFC282820B and PFC282822B series of PFC chokes are suitable for 500 - 1000 W continuous conduction mode PFC boost converter applications. ITG Electronics also offers a wider design (27.5 x 28.5 mm3) compatible with power systems up to 2,000 W. These devices are part of ITG Electronics' broader Cubic Design PFC Choke series. Compared with traditional, toroidal-shaped PFC chokes, the new series extension incorporates a flat wire and square core to save space and increase power density. ITG Electronics' range of PFC chokes are appropriate for AC to DC power conversion in industrial equipment and automative components manufacturing environments. | 21.04.2024 14:30:00 | Apr | news_2024-05-01_19a.jpg | \images\news_2024-05-01_19a.jpg | https://itg-electronics.com/en/series/909 | itg-electronics.com |
| Integration of Power Supply Company completed | With the official change of name, the legal step h... | 11893 | Industry News | Integration of Power Supply Company completed | With the official change of name, the legal step has been completed: Emtron electronic GmbH is now called FORTEC Power GmbH. Emtron electronic GmbH has already been part of FORTEC Elektronik AG since 1998. In July 2023, a change to a "branded house" was initiated within the FORTEC Group, i.e. holistic corporate brands were designed for the FORTEC group subsidiaries in order to offer the comprehensive product range of Display Technology, Embedded and Power Supplies under one brand and to appear as "FORTEC One" in communication with the market. | 19.04.2024 14:00:00 | Apr | news_2024-05-01_9a.jpg | \images\news_2024-05-01_9a.jpg | https://emtron.de/Blog/emtron-ist-jetzt-fortec-power | emtron.de |
| Innauguration of Plant in Malaysia | LEM chose to make such a substantial investment in... | 11886 | Industry News | Innauguration of Plant in Malaysia | LEM chose to make such a substantial investment in the state of Penang/Malaysia by opening a new plant in this region. From employing around 70 people in April 2024, LEM expects to increase the headcount to more than 200 people by March 2025 and eventually more than 500, with sales from the factory expected to reach over € 200 millions. With plans in place already for an extension on the additional 5,000 m<sup>2</sup> of land, the new 11,800 m<sup>2</sup> factory features a state-of-the-art logistic system including automatic guided vehicles (AGVs) on the shopfloor which transport components from the warehouse to the high-tech production lines. LEM Malaysia is also the pilot for the roll-out of the company's ERP system and will produce a substantial part of its energy through solar panels. | 19.04.2024 07:00:00 | Apr | news_2024-05-01_2a.jpg | \images\news_2024-05-01_2a.jpg | https://www.lem.com/en/lem-inaugurates-new-hightech-plant-malaysia#:~:text=New%20Factory%20in%20Penang%20Fuels%20Growth%20and%20Sustainability&text=From%20employing%20around%2070%20people,to%20reach%20over%20%E2%82%AC200m. | lem.com |
| Call for Papers for Power Electronics Conference in 2025 | After the EPE editions Grenoble 1987, Toulouse 200... | 11910 | Event News | Call for Papers for Power Electronics Conference in 2025 | After the EPE editions Grenoble 1987, Toulouse 2003, Lille 2013 and Lyon 2020, the 26th edition of the European Conference on Power Electronics and Applications will take place in Paris, France. The Power Electronics community will gather in Paris, from March 31st to April 4th, 2025, to exchange views on research progress and technological developments. Several tutorials as well as some technical visits will be planned and organized. In addition, the 40 years of EPE conferences will be celebrated. Now the organizer has started the call for papers for "the largest conference in its field, attracting experts from numerous countries to join in the discussions". With the objective to exchange and meet fellow professionals and academics, the EPE conference brings together researchers, engineers, etc. working at the forefront of power electronics technologies. The main topics will be electromobility, smart grids and renewable energy, energy storage systems, digitalization ("the powerful fusion of ai and IoT for sustainability"), sustainable and affordable power electronics as well as energy transition and societal change. | 18.04.2024 12:00:00 | Apr | news_2024-05-15_7.jpg | \images\news_2024-05-15_7.jpg | https://epe2025-paris.com/ | epe2025-paris.com |
| GaN IC enables solar-powered Irrigation Pump | Navitas has announced, that Virtual Forest one of ... | 11890 | Industry News | GaN IC enables solar-powered Irrigation Pump | Navitas has announced, that Virtual Forest one of India's leading electronics design companies specializing in motor control and human interface technologies for consumer appliances, fluid movement and mobility, has adopted its GaNFast power integrated circuits (IC) technology for a zero-emission, powerful 3 hp (2,250 W) solar-powered irrigation pump. This pump is remotely accessed via quad-band IoT with low power consumption. It can raise 200 l of water per minute to a height of about 30 m, enough to water 3 acres of farmland, and help to produce 10 tonnes of wheat. Further, the IoT enabled solar pump ensures optimal water usage through intelligent analytics, therefore minimizing ground water utilization. Currently, the majority of pumps in this area is powered by polluting and noisy diesel generators or expensive, lossy long-distance electrical cables. The Virtual Forest solar pump with maximum power point tracking (MPPT) operates in conjunction with solar panel and energy storage to provide robust, energy-independent and pollution-free performance at the point of use. In this application two GaN power FETs with GaN drivers, level-shifters, protection features and high-efficiency loss-less current sensing NV6269 half-bridge ICs are used. | 18.04.2024 11:00:00 | Apr | news_2024-05-01_6a.jpg | \images\news_2024-05-01_6a.jpg | https://navitassemi.com/navitas-virtual-forest-join-hands-to-advance-net-zero-in-agriculture/ | navitassemi.com |
| Fully integrated 48 W Power Supply Board mount Module | The PSDG-48 series is a fully integrated COTS mult... | 11902 | Product Release | Fully integrated 48 W Power Supply Board mount Module | The PSDG-48 series is a fully integrated COTS multi-output 48 W isolated power supply board mount module from Gaia Converter. Dedicated to 24 & 28 VDC military and High Reliability applications, MIL-STD-461, MIL-STD-704, MIL-STD-1275, ABD100 and DO160 power supply requirements are all built into this module. It is equipped with an integrated EMI filter, reverse polarity protection, hold-up function (50 ms transparency timing managed with external capacitor), high & low input voltage transients and inrush current limit and short circuit and over-voltage protected outputs. The module operates from -40 °C to +105 °C (full load case operating temperature range) and is suitable for all rugged applications complying with MIL-STD-202 & 810 for altitude, humidity, temperature shocks & cycles, mechanical vibrations and shocks. The power supplys of the PSDG series use a fixed high frequency switching topology. It is fully encapsulated with thermally conductive resin for optimal power dissipation in harsh environments. The complete power supply efficiency up to 87%. It is integrated in a black anodized machined aluminium case measuring 91 x 54 x 9 mm<sup>3</sup>. | 17.04.2024 13:30:00 | Apr | news_2024-05-01_18a.jpg | \images\news_2024-05-01_18a.jpg | https://www.gaia-converter.com/new-flhg-60-m-n-copy/ | gaia-converter.com |
| Automotive linear Regulators | STMicroelectronics' LDH40 and LDQ40 voltage regula... | 11916 | Product Release | Automotive linear Regulators | STMicroelectronics' LDH40 and LDQ40 voltage regulators for automotive and industrial applications start-up from a 3.3V input and operate with up to 40 V applied. The LDH40 delivers up to 200 mA and is available in one version only, having adjustable output voltage from 1.2 V to 22 V. The 250 mA LDQ40 is available with a 1.2 V – 12 V adjustable output and a choice of 1.8 V, 2.5 V, 3.3 V, and 5.0 V fixed output voltages. The quiescent current of 2 µA at zero load and 300nA logic-controlled shutdown mode help preserve battery energy in always-on standby systems. The devices are stabilized with a small ceramic capacitor on the output. The automotive devices are AEC-Q100 qualified and packaged as 2 mm x 2 mm DFN6L devices with wettable flanks that ease PCB design and facilitate automated optical inspection. Their wide input-voltage range allows connection to a vehicle 12 V bus, that can reach up to 40 V transient, to power infotainment systems, instrument clusters, and ADAS. All the LDOs have system protection and management features including internal current limiting, thermal protection, soft-start, and output active discharge. There is an enable pin for shutdown control and a power-good pin for diagnostic monitoring. The LDQ40 devices also have short-circuit protection. | 17.04.2024 11:30:00 | Apr | news_2024-05-15_13.jpg | \images\news_2024-05-15_13.jpg | https://newsroom.st.com/media-center/press-item.html/n4625.html | st.com |
| European and Korean Semiconductor Manufacturer cooperate on GaN and SiC | SweGaN, a European semiconductor manufacturer that... | 11888 | Industry News | European and Korean Semiconductor Manufacturer cooperate on GaN and SiC | SweGaN, a European semiconductor manufacturer that develops and produces engineered high-performance Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces it has entered strategic partnership with South Korea based RFHIC Corporation. RFHIC is active in designing and manufacturing GaN RF & microwave semiconductors for communications and defense applications. The agreement encompasses an undisclosed equity investment from RFHIC. The two companies will focus on joint R&D and product development moving forward. Over the last decade, SweGaN has been developing and producing high-performance GaN-on-SiC epitaxial solutions for RF and power devices that can be used in various applications such 5G telecommunications infrastructure, defense radars, satellite communications, on-board chargers, and data centers. This strategic investment by RFHIC shows the recognition of SweGaN's QuanFINE® epitaxial solutions as a differentiator among GaN-on-SiC materials available on the market. In partnership with RFHIC, SweGaN gains additional resources to expedite market penetration and to achieve its business goals. RFHIC Corporation cites the partnership with SweGaN and investment strategy target strengthening RFHIC's gallium nitride semiconductor supply chain and further fortifying its competitiveness of RF and microwave products within the compound semiconductor arena. In the joint collaboration, SweGaN and RFHIC plan to address the increasing demand for GaN semiconductors and initiate new product developments for a variety of markets. | 15.04.2024 09:00:00 | Apr | news_2024-05-01_4a.jpg | \images\news_2024-05-01_4a.jpg | https://swegan.se/3087/ | swegan.se |
| Expanded Power Portfolio | Tektronix has acquired EA Elektro-Automatik (EA), ... | 11895 | Industry News | Expanded Power Portfolio | Tektronix has acquired EA Elektro-Automatik (EA), a principal supplier of high-power electronic test solutions for energy storage, mobility, hydrogen, and renewable energy applications. The introduction of EA to the Tektronix team provides the company with expanded solutions, leveraging Tektronix's oscilloscopes and isolated probes, EA's power supplies and electronic loads, and Keithley's source meters and instrumentation. Combined, the Tektronix portfolio offers a set of capabilities for energy storage and power electronics design needs, from ultra-low to ultra-high power. With the addition of EA, Tektronix is well equipped to serve engineers who are electrifying our world. With emphasis on creating solutions for power electronics in the semiconductor, aerospace, and automotive industries, the Tektronix and EA product portfolio addresses issues in energy storage, mobility, and hydrogen fuel. | 12.04.2024 16:00:00 | Apr | news_2024-05-01_11a.jpg | \images\news_2024-05-01_11a.jpg | https://www.tek.com/en/blog/ea-elektro-automatik-greatly-expands-tektronixs-high-power-test-and-measurement-coverage | tek.com |