Bodo's News

Read through my personal pick of news around people, our industry, important events and interesting product releases. Or click on a filter and pick your area of interest!

 

GaN Insights eBook
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Learn more:
infineon.com
  • Industry News
  • 2026-02-10

The power electronics industry is undergoing a significant transformation, driven by the growing adoption of Gallium Nitride (GaN) power solutions. Infineon Technologies has published the 2026 edition of its annual GaN Insights, providing awareness into the world of GaN technology, its applications, and future prospects. According to analysts from Yole, the GaN power semiconductor market is expected to reach almost $3 billion by 2030, marking a 400 % increase compared to the 2025 market. This rapid growth is driven by significant production ramps, which began in 2025, broadening GaN adoption across multiple industries and enabling its penetration into new applications. In fact, the market is expected to grow at a compound annual growth rate (CAGR) of 44 % from 2025 to 2030 (Source: Trend Force), with revenue projections of $920 million in 2026, representing a 58 % growth over 2025 (Source: Yole). In 2026, designers are expected to uncover new uses of GaN bidirectional switches (BDS) beyond solar inverters and EV on-board chargers. Infineon’s high-voltage bidirectional GaN switches feature a common drain design with a double gate structure, leveraging proven Gate Injection Transistor (GIT) technology. This architecture enables the use of the same drift region to block voltages in both directions, resulting in a significantly reduced die size compared to conventional back-to-back arrangements. For instance, utilizing Infineon’s CoolGaN™ BDS, which operates up to 1 MHz, solar microinverters deliver 40 % more power in the same-sized inverter while reducing system costs. The GaN Insights eBook is available on Infineon’s website.

Strategic GaN Technology Licensing and Second Sourcing Agreement
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Learn more:
epc-co.com
  • Industry News
  • 2026-02-10

Efficient Power Conversion (EPC) announced a comprehensive licensing agreement with Renesas Electronics Corporation. Under the agreement, Renesas will gain access to EPC’s proven low-voltage eGaN® technology and its established supply-chain ecosystem, accelerating the adoption of high-performance GaN solutions across a broad range of markets. EPC and Renesas will collaborate over the next year to establish internal wafer fabrication capabilities for these products. In addition, Renesas will second-source several of EPC’s GaN devices that are already in mass production, enhancing supply-chain resilience for customers. This alliance expands customer access to GaN technology while providing increased supply assurance through qualified second sourcing. "Together, EPC and Renesas are forming a global alliance to deliver state-of-the-art power efficiency - cutting costs in AI data centers and enhancing autonomous systems. This is an exciting moment for our industry and our company," said Alex Lidow, CEO of EPC.

10 kW DC/DC Platform delivering 98.5 % Efficiency
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Learn more:
navitassemi.com
  • Product Release
  • 2026-02-09

Navitas Semiconductor has introduced a 10 kW DC/DC power platform delivering up to 98.5 % peak efficiency and 1 MHz switching frequency to support next-generation AI data centers. The all-GaN 10 kW 800 V–to–50 V DC/DC platform employs 650 V and 100 V GaNFast™ FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5 % peak efficiency and 98.1% full load efficiency in a full-brick (61 mm × 116 mm × 11 mm) package, achieving 2.1 kW/in³ power density. The resulting production-oriented platform supports 800 V–to–50 V and +/- 400 V–to–50 V architectures at 10 kW, integrating auxiliary power and control to simplify adoption and enable high–power-density module designs for next-generation HVDC AI data centers.

Partner Program launched
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Learn more:
we-online.com
  • Industry News
  • 2026-02-05

Würth Elektronik has launched its partner program to create a dynamic, high-growth innovation ecosystem in the electronics industry. The program was officially presented at a kick-off event at the end of September, where Texas Instruments was presented as the first Premium Partner. The semiconductor manufacturer Nexperia has also signed up as a Silver Partner. The Würth Elektronik partner program is divided into three tiers. Entry is possible with just a non-disclosure agreement, a brand license, and a business model. Based on clearly defined criteria – such as brand commitment, shared growth objectives, and the integration of Würth Elektronik components into their own designs – participating companies can then progressively advance from Entry Level through Silver to Premium Partner status. The program is based on four pillars: technical support, products and tools, marketing support, and knowledge transfer and training. This creates a network that brings together technology leaders, business units, and stakeholders. Partners can unlock new market potential, accelerate product innovation, and offer their customers a seamless one-stop-shop concept.

Service for Current Sense Transformers
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Learn more:
we-online.com
  • Product Release
  • 2026-02-05

Würth Elektronik expands its free design tool REDEXPERT to include the Current Sense Transformer Selector. It enables developers to select the appropriate current sense transformers based on parameters relevant to their application. Current sense transformers for measuring alternating current offer unique advantages over other current sensing solutions: galvanic isolation, low power loss, high immunity to signal noise, and simple circuit design. Selecting the right current sensor can be a challenge depending on the application. The Current Sense Transformer Selector from Würth Elektronik offers a unique design tool previously not available on the market in this form. After entering the parameters – current, frequency, signal type, and desired maximum error rate – the Selector finds all available options in Würth Elektronik’s product database that match these criteria. The tool provides a list of components with the corresponding parameters and simulates both the temperature rise and the error as a function of frequency and current. The tool also allows the direct comparison of different options in a simulation view and provides an overview page with all relevant information for the selected component. These simulations, based on actual measurements, save developers from having to conduct their own tests when selecting current sense transformers (CSTs). Typical applications of current sense transformers include AC current measurement, switched-mode power supplies, overload detection, load shedding/shutdown detection, metering, load measurement, and high-frequency current sensing.

Isolated Gate Driver ICs for SiC Applications
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Learn more:
infineon.com
  • Product Release
  • 2026-02-05

Infineon Technologies introduces the EiceDRIVER™ 1ED301xMC12I product family, a series of high-performance isolated gate driver ICs with opto. This enables engineers to migrate to SiC technology without redesigning opto-based control schemes. The family is suitable for demanding applications where fast, reliable, and SiC-capable gate drivers are required, such as motor drives, solar inverters, electric-vehicle chargers, and energy-storage systems. The 1ED301xMC12I product family includes three variants designed to support Si MOSFETs, IGBTs, and SiC MOSFETs: 1ED3010, 1ED3011, and 1ED3012. All devices deliver up to 6.5 A of output current. The gate drivers come in a CTI 600 6-pin DSO package offering more than 8 mm creepage and clearance. Their insulation is certified according to UL 1577 and is pending certification according to IEC 60747-17. The opto-emulator input uses two pins. With a CMTI exceeding 300 kV/µs, a propagation delay of 40 ns, and timing matching below 10 ns, the devices enable precise and robust switching behavior. Moreover, a pure PMOS sourcing stage further improves turn-on performance.

1200V SiC MPS Diodes
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Learn more:
rirpowersemi.com
  • Product Release
  • 2026-02-05

RIR Power Electronics has introduced a family of 1200 V Silicon Carbide Merged-PiN Schottky (MPS) diodes designed for high-efficiency and high-reliability power systems. The devices are available in current ratings from 10 A to 40 A in industry-standard TO-247-2L packages. By monolithically integrating Schottky and PiN structures, RIR’s SiC MPS diodes deliver near-zero reverse recovery with enhanced surge current capability, low leakage at elevated temperatures, and improved avalanche and blocking robustness compared to conventional Schottky diodes. The diodes target demanding applications such as EV charging, data centers and AI infrastructure, renewable energy and grid-tied systems, industrial drives, aerospace and defense, and green hydrogen and electrolysis systems.

Technology Guide to enhance Power Stability in AI-driven Data Centres
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Learn more:
murata.com
  • Industry News
  • 2026-02-04

Murata Manufacturing has launched a technology guide entitled: ‘Optimising Power Delivery Networks for AI Servers in Next-Generation Data Centres.’ Available on the company’s website, the guide introduces specific power delivery network optimisation solutions for AI servers that enhance power stability and reduce power losses across the data center infrastructure. The guide addresses the rapid advancement and adoption of AI, a trend driving the continuous rollout of new data centers worldwide. As the industry moves toward higher voltage operations and increased equipment density, the resulting increase in overall power consumption has made stable power delivery a critical business issue for data centre operators. Consequently, the guide focuses on power circuit design for data centers, providing a detailed overview of market trends, evolving technologies in power delivery, and the key challenges the sector currently faces. To assist engineers and designers, the guide is structured to provide a market overview that breaks down power consumption and technology trends within power lines. It further addresses market challenges and solutions by examining key considerations in power-line design and exploring how the evolution of power placement architectures can facilitate power stabilisation and loss reduction. Murata supports these architectural improvements with products, including multilayer ceramic capacitors (MLCC), silicon capacitors, polymer aluminium electrolytic capacitors, inductors, chip ferrite beads, and thermistors. Furthermore, the company provides design-stage support.

Texas Instruments to acquire Silicon Labs
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Learn more:
ti.com
  • Industry News
  • 2026-02-04

Texas Instruments and Silicon Labs have signed a definitive agreement under which Texas Instruments will acquire Silicon Labs for $ 231.00 per share in an all-cash transaction, representing a total enterprise value of approximately $ 7.5 billion. The acquisition aims to create a provider of embedded wireless connectivity solutions by combining Silicon Labs’ strong portfolio and expertise in mixed signal solutions with Texas Instruments’ analog and embedded processing portfolio and internally owned technology and manufacturing capabilities. The combined company is expected to accelerate growth by better serving existing and new customers through enhanced innovation and market access.

Power Module enhances AI Data Center Power Density and Efficiency
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Learn more:
microchip.com
  • Product Release
  • 2026-02-03

Microchip Technology launched the MCPF1525 Power Module, a highly integrated device with a 16V Vin buck converter that can deliver 25 A per module, stackable up to 200 A. This device is designed to power the latest generation of PCIe switches and high-performance compute MPU applications needed for AI deployments. The MCPF1525 is packaged in a vertical construction that maximizes board space efficiency and can offer up to a 40 % board area reduction when compared to other solutions. The compact power module is approximately 6.8 mm × 7.65 mm × 3.82 mm, making it usable for space-constrained AI servers. For increased reliability, the MCPF1525 includes multiple diagnostic functions reported over PMBus™, including over-temperature, over-current and over-voltage protection to minimize undetected faults. With a thermally enhanced package, the device is engineered to work within an operating junction temperature range of -40°C to +125°C. An on-board embedded EEPROM allows users to program the default power-up configuration. The MCPF1525 features a customized integrated inductor for low conducted and radiated noise, enhancing signal integrity, data accuracy and reliability of high-speed computing, helping reduce repeated data transmissions that waste valuable system power and time.

GaN Power Transistor: Seventh-Generation in Mass Production
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Learn more:
epc-co.com
  • Product Release
  • 2026-02-02

Efficient Power Conversion (EPC) has started volume production of the EPC2366, the first of its seventh-generation (Gen 7) eGaN® family of power transistors. EPC2366 delivers up to 3× better performance than equivalent silicon MOSFETs. With a typical RDS(on) of 0.84 mΩ and an optimized RDS(on) × QG figure of merit (FoM) < 12 mΩ *nC, it simultaneously cuts conduction and switching losses while improving thermal performance. Engineered for high-efficiency, high-density power systems, the device excels in synchronous rectification, high-density DC/DC conversion, AI server power supplies, and advanced motor drives. It supports drain-to-source voltages up to 40 V and transient voltages up to 48 V, with continuous drain currents up to 88 A and pulsed currents of 360 A, making it well suited for the most demanding power systems. The device is integrated in a 3.3 mm × 2.6 mm PQFN package with a thermal resistance from the junction to the case of 0.6 °C/W. To accelerate design-in and evaluation, EPC also offers the EPC90167 half-bridge evaluation board, which integrates two EPC2366 transistors in a low-parasitic layout with support for standard PWM drive signals and flexible input modes, providing engineers a reference platform to assess performance in real-world applications.

High-Current, Low-Noise Shielded Power Inductor for Compact Power Systems
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Learn more:
sumida.com
  • Product Release
  • 2026-01-28

Sumida has launched the molded power inductors of the 0615CDMCC/DS series, a low-profile magnetic component engineered to support increasingly power-dense electronics, including compact computing devices, servers, and advanced DC/DC converter architectures. The 0615CDMCC/DS series leverages metal compound molding construction - a key advancement over traditional ferrite inductor designs. By embedding the winding in a solid composite core, Sumida has eliminated internal air gaps and improved magnetic flux containment. This results in higher current capability and enhanced thermal performance, allowing the inductor to maintain stable inductance even as load current rises. Because the molding process naturally produces a shielded magnetic structure, the 0615CDMCC/DS series significantly reduces electromagnetic interference (EMI) and minimizes magnetic flux leakage into nearby circuitry without bulk. Engineers designing around noise-critical applications such as high-speed digital boards, RF-sensitive devices, and distributed power rails, gain flexibility in component placement without compromising signal integrity. The inductor is ultra-thin with a footprint of 7.3 mm × 6.8 mm × 1.5 mm max.), giving engineers a practical solution for mechanical envelopes that leave little headroom for vertically oriented components. With operation and storage temperature support from -55 °C to +125 °C, the 0615CDMCC/DS series is prepared for demanding thermal conditions across computing, industrial, and battery-powered platforms. Inductance values from 0.12 µH to 1.50 µH are currently available.

High Voltage Diodes
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Learn more:
deantechnology.com
  • Product Release
  • 2026-01-28

Dean Technology added two series to their medium power high voltage diode line: the FH Series and SH Series of diodes. The FH series and SH series were conceptualized and designed based on specific needs from customers. Using the technology of the legacy 2CL series diode line, these series offer higher current and significantly faster reverse recovery time, making them suited for applications with critical performance requirements such as X-ray equipment (medical, dental, industrial, and security), induction heating, and high voltage power supplies. SH series models are standard recovery, but the FH series offers a reverse recovery time (TRR) of 40 ns maximum, significantly faster than its 2CL predecessor (100 ns). The SH series units offer a maximum repetitive reverse voltage range (VRRM) from 8 to 15 kV at 200 to 350 mA of average forward current (IFAVM). The FH series offers a VRRM range of 2 to 30 kV at an IFAVM range of 100 to 700 mA.

GaN Technology Licensing Agreement
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Learn more:
vis.com.tw
  • Industry News
  • 2026-01-28

Vanguard International Semiconductor Corporation (VIS) has signed a technology licensing agreement with Taiwan Semiconductor Manufacturing Company (TSMC) for high-voltage (650 V) and low-voltage (80 V) Gallium Nitride technologies. This agreement will help VIS accelerate the development and expansion of next-generation GaN power technologies for applications such as data centers, automotive electronics, industrial control, and energy management. Through this licensing agreement, VIS will expand its GaN-on-Si technology into high-voltage applications and offer a GaN-on-Si platform for power applications. Combined with its existing GaN-on-QST technology platform, VIS claims to "become the only foundry in the world capable of offering power GaN technologies on both silicon and QST substrates". VIS will support complete product solutions covering low voltage (<200 V), high voltage (650 V) and ultra-high voltage (1200 V). The technology will be validated on VIS’ mature 8-inch manufacturing line to ensure process stability and high yield. Development activities are expected to commence in early 2026, with production scheduled for the first half of 2028.

600 V Super Junction MOSFET Platform
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Learn more:
aosmd.com
  • Product Release
  • 2026-01-27

Alpha and Omega Semiconductor unveiled its αMOS E2™ 600 V Super Junction MOSFET platform. The first high-voltage product from the platform is AOS’ AOTL037V60DE2. The MOSFET is designed to meet the growing demand for high efficiency and high-power density across a wide range of applications, including servers, workstations, telecom rectifiers, solar inverters, motor drives, and industrial power systems. AOS engineered its αMOS E2 High-Voltage Super Junction MOSFET platform with an intrinsic body diode to reliably handle hard commutation scenarios, such as reverse recovery of the freewheeling body diode that can occur during abnormal events, such as short-circuits or start-up transients. The AOTL037V60DE2, available in a TOLL package, features a maximum RDS(on) of 37 mΩ. In evaluations conducted by AOS’ application engineering team, the body diode ruggedness of this MOSFET demonstrated the ability to withstand di/dt = 1300 A/µs under specific forward current conditions at a junction temperature of 150°C. Moreover, AOS testing confirmed that the AOTL037V60DE2 delivered superior Avalanche Unclamped Inductive Switching (UIS) capability and a longer Short-Circuit Withstanding Time (SCWT) when compared to competing MOSFETs. This enhanced ruggedness translates into greater system-level reliability, ensuring robust performance even under abnormal operating scenarios.

LDO Regulators with 500 mA Output Current
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Learn more:
rohm.com
  • Product Release
  • 2026-01-27

ROHM has developed the "BD9xxN5 Series" of LDO regulator ICs with 500 mA output current, featuring its proprietary ultra-stable control technology "Nano Cap™ ". This series comprises 18 products designed for 12V/24V primary power supply applications used in automotive equipment, industrial equipment, and communication infrastructure. ROHM developed the "BD9xxN1 Series" LDO regulator (150 mA output current) in 2022, incorporating its proprietary control technology, Nano Cap , which enables stable operation with output capacitors as small as 100 nF. The BD9xxN5 Series builds on the BD9xxN1 Series by increasing the output current to 500 mA – more than three times higher than before – significantly broadening its suitability for applications requiring higher power. In addition, very low output voltage ripple of approximately 250 mV (with load current variation of 1 mA to 500 mA within 1 µs) is achieved with a small output capacitance of 470 nF (typical). Beyond standard small MLCCs (multi-layer ceramic capacitors) in the range of several µF and large-capacity electrolytic capacitors, it also supports ultra-small MLCCs, such as the 0603M size (0.6 mm × 0.3 mm), with capacities below 1 µF. This contributes to space saving as well as greater flexibility in component selection.

IGBT Series for Solar and Energy Storage Systems
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Learn more:
magnachip.com
  • Product Release
  • 2026-01-22

Magnachip Semiconductor launched a series of IGBTs designed for solar inverters and industrial Energy Storage Systems (ESS). These 650 V and 1200 V generation discrete IGBT products provide improved Reverse Bias Safe Operating Area for stable and reliable performance under harsh high-voltage and high-current conditions. The products are available in both standard TO-247 and high-capacity TO-247 Plus packages. Specifically, the cell pitch has been reduced by approximately 40 %, increasing current capacity within the same die area. Magnachip plans to further expand its product lineup in the first half of 2026 by introducing a high-current series rated up to 650 V / 150 A, as well as new 750 V products. The company also plans to add the ‘TO-247-4Lead’ package, featuring a Kelvin pin for improved switching efficiency.

Sintered Metal Shunt Resistors
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Learn more:
rohm.com
  • Product Release
  • 2026-01-22

ROHM has developed the UCR10C Series, which is claimed to deliver "the industry’s highest rated power for 2012-size shunt resistors (10 mΩ to 100 mΩ)". The devices form a copper-based resistive element on an alumina substrate via sintering, achieving rated powers of 1.0 W and 1.25 W. This enables the replacement of products with wide terminal types or larger alternatives, facilitating miniaturization and reducing the number of components required. Furthermore, the use of a metal resistive element achieves a low TCR (0 to +60 ppm/°C). This minimizes errors due to temperature changes, enabling high-precision current sensing. Moreover, it achieves the same level of durability as the metal plate types in temperature cycle testing (-55 °C / +155 °C, 1000 cycles).

1200 V / 300 A IGBT Module in CPAK-EDC Package
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Learn more:
cissoid.com
  • Product Release
  • 2026-01-22

CISSOID has expanded its standard product offerings with the CMT-PLA1BL12300MA. This 1200 V / 300 A Half-Bridge IGBT Power Module is now available in the industry-standard CPAK-EDC package, delivering enhanced mechanical robustness and drop-in compatibility. The CMT-PLA1BL12300MA is designed for high frequency switching and high-performance industrial applications, such as UPS systems, motor and motion control solutions, and power supplies. Utilising Trench Gate Field Stop (TG-FS) IGBT technology, the module delivers a balance between switching speed and conduction losses. Integrated diode technology provides fast and soft reverse recovery, simplifying system design while improving the EMC performance. The device is rated for 450 A continuous DC current (@ Tj = 90 °C), operates with a saturation voltage Vce_sat = 1.56 V (@ Ic = 300 A, Tj = 25 °C) / Vce_sat = 1.78 V (@ Ic = 300 A, Tj = 150 °C) and offers the following thermal resistance: Rth_jc = 0.065 °C/W (IGBT) / 0.1 °C/W (diode).

600 V Gate Driver Family
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Learn more:
microchip.com
  • Product Release
  • 2026-01-21

Microchip introduced its 600 V Gate Driver portfolio, featuring 12 devices available in half-bridge, high-side/low-side and 3-phase driver configurations, which are designed for motor control and power conversion systems for industrial and consumer applications. The 600 V gate drivers provide current drive options from 600 mA to 4.5 A. They support 3.3V logic for seamless integration with microcontrollers. They are designed with Schmitt-triggered inputs and internal deadtime to protect MOSFETs.

Senior Vice President for Power Solutions
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Learn more:
omnionpower.com
  • People
  • 2026-01-21

OmniOn Power™ (OmniOn) has appointed Philip Zuk as Senior Vice President and General Manager of its AI and Data Center business. He has more than 25 years of experience in the global power electronics and semiconductor industries. In this role, Zuk will lead the company’s recently established AI and Data Center business unit, focused on addressing the power challenges faced by today’s AI-driven data centers while anticipating the industry’s future power requirements. Prior to joining OmniOn, Zuk used to work for Transphorm, Microsemi and Vishay Siliconix.

Family of Dual-Channel Digital Isolators for High-Voltage Systems
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Learn more:
diodes.com
  • Product Release
  • 2026-01-20

Diodes Incorporated announced the API772x RobustISO™ products, a series of dual-channel digital isolators, which are specifically designed to provide a reliable and robust isolation solution for digital signals in critical applications - addressing rising demands in areas such as industrial automation, new energy power systems, and data center power supplies. The API772x digital isolators are engineered to meet reinforced and basic isolation requirements across various standards, including VDE, UL, and CQC. They offer a 5,000 VRMS isolation rating for one minute, per UL 1577, and feature an 8,000 VPeak isolation rating, per DIN EN IEC 60747-17 (VDE 0884-17), with a maximum surge isolation voltage of 12,800 VPeak. This level of isolation represents a significant differentiation with a higher breakdown voltage exceeding 12 kV. The capacitive isolation barrier employed in these devices, which has a thickness greater than 25 µm, is predicted to have an operational lifetime of over 40 years. These RobustISO digital isolators support data rates of up to 100 Mbit/s and shows a minimum common-mode transient immunity (CMTI) of 150 kV/µs. The API772x series operates over a supply voltage range of 2.5 V to 5.5 V and features low-power consumption, typically drawing 2.1 mA per channel at 1Mbps. They also offer a low propagation delay of 11ns (typ.), ensuring timely signal transferring. The API772x devices are supplied in the SO-8W (Type CJ) package.

Concurrent forums of productronica China 2026: Focusing on Four Trends and Guiding the Development Direction of Intelligent Manufacturing
  • Event News
  • 2026-01-19

From March 25 to 27, 2026, productronica China 2026 will be held grandly at Halls E1-E5 and W1-W4 of the Shanghai New International Expo Centre (SNIEC). As an important display and exchange platform for the electronic manufacturing industry, this edition will feature over 1,000 exhibitors across its exhibition area of nearly 100,000 square meters. It will focus on the needs of multiple fields, including component manufacturing, test and measurement, quality assurance, new energy vehicle inspection technology, surface mount technology (SMT), electronics manufacturing services (EMS), automated electronic assembly, clean technology, cable processing, electronic chemical materials, dispensing and bonding technology, robotics, AGV, intelligent warehousing, sensor technology, motion control and drive technology,new energy vehicle technology as well as automotive PLC Industrial control system. It aims to present an "innovation feast" covering the entire industrial chain of electronic production to the industry, highlighting smart factories, new energy vehicle technology, and the digital future.

R&D Centre and SMT Prototyping Line in Xiamen/China opened
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Learn more:
recom-power.com
  • Industry News
  • 2026-01-16

Recom Power has opened a Research & Development Centre and SMT Prototyping Line in Xiamen/China. This facility integrates R&D, Engineering, and Quality departments under one roof, to enable seamless collaboration across all stages of product development. This close interaction enables faster design iterations, improved Design for Manufacturability (DFM), accelerated trial runs and verification testing, as well as mass production part approval. Equipped with a dedicated SMT prototyping line, the Xiamen Centre allows for rapid sample and initial stock production. The RECOM Xiamen R&D Centre will serve as a vital hub for next-generation power conversion technologies, supporting both global and regional development initiatives. It complements RECOM’s existing design and production facilities across Europe, the USA, and Asia, ensuring consistent product quality and innovation worldwide.

DC link Capacitor operate at up to +105 °C without Derating
  • Product Release
  • 2026-01-15

TDK Corporation announced the ModCap UHP (B25648A) series of DC link capacitors. ’UHP’ stands for ’Ultra-High Performance’, and this series enables continuous operation at hotspot temperatures of up to +105 °C without power derating. Compared to previous ModCap generations, which required derating starting at +90 °C, the new design enables higher current density and a longer lifetime of 200,000 hours at +105 °C in challenging conditions, while supporting a 20 % higher current density. With a DC voltage rating of 1350 V to 1800 V and a capacitance ranging from 470 µF to 880 µF, the series is optimized for SiC semiconductor-based inverters that require low inductance (ESL of 8 nH) and high-frequency performance. These capacitors target fast-growing sectors, including renewable energy (solar and wind power, electrolyzer), energy storage, and inverters for railway and industrial drives. Their cubic design (205 × 90 × 170 mm³; L x W x H) simplifies busbar integration, thereby increasing power density in compact converters and reducing the need for additional snubber capacitors.

Power Electronics International 2026 Event
  • Event News
  • 2026-01-15

Power Electronics International Conference 2026 returns to Brussels April 20 to 22, for its 4th edition as part of the Angel Tech conference series, bringing together the global power electronics community for two days of insight, discussion and collaboration. From automotive electrification and renewable energy to AI driven data centres and wide bandgap innovation, the agenda is built around the technologies shaping the future of power electronics. Co located with CS International, PIC International and Advanced Packaging International, the event will welcome 800 plus senior level attendees and 80 plus exhibitors, with four expert led conference programmes, a shared exhibition and dedicated networking receptions.

Tape-Out of Vertical Power Solution for AI Data Centers
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Learn more:
ambersemi.com
  • Industry News
  • 2026-01-15

Amber Semiconductor announced the successful tape out of its AmberSemi PowerTile™ vertical power delivery solution design specifically for AI processors in datacenters. PowerTile is a 1,000 A vertical power device that can be mounted on the backside of a server board, directly beneath the processor. By delivering power through a vertical path rather than traditional lateral distribution, PowerTile reduces power distribution losses to the processor by more than 85 %. PowerTile is a scalable solution designed to support CPUs, GPUs, FPGAs and other high-performance processors requiring large current delivery in minimal space. Measuring 20 mm × 24 mm × 1.68 mm, a single PowerTile can deliver up to 1,000 A directly to the processor. Multiple devices can be paralled to scale beyond 10 kA. The company expects to begin evaluation and testing with key partners later this year, with initial products shipping in material production volumes in 2027.

10 Watt Wide-Input Converters for Industrial Applications
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Learn more:
tracopower.com
  • Product Release
  • 2026-01-14

TRACO Power releases its TMR 10WI series of isolated DC/DC converters designed for versatility, offering an input range from 4.5 VDC to 75 VDC at an efficiency of up to 89 %. Each unit is equipped with protection features, including short-circuit protection, overcurrent limitation, undervoltage lockout, and remote on/off control. Certified to IEC/EN/UL 62368-1 standards, the series supports an operating temperature range of -40 °C to +70 °C and is rated for altitudes up to 5000 meters. Housed in a SIP-8 plastic case, the TMR 10WI series is available in both single and dual output configurations, making it suitable for industrial applications.

40 W and 75 W Railway DC/DC Converters
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Learn more:
recom-power.com
  • Product Release
  • 2026-01-14

RECOM announced two DC/DC converters for the rail market with an 11:1 input range to cover all nominal input voltages from 24 V to 110 VDC, with 24 V output and a 12 V and 15 V output version coming soon. Models RMD40-UW and RMD75-UW have trimmable outputs with reinforced isolation, rated at 40 W (60 W/10 s boost) and 75 W (90 W/10 s boost), respectively. The parts are offered as lightweight baseplate-cooled with a conversion efficiency of better than 90%, which means that they can operate at full power for OT4+ST1&ST2 classes from -40 °C to +85 °C with no additional cooling in any mounting position. Features like EN50121-3-2 filtering and disturbance protection, input reverse polarity protection, inrush current limiting, remote on/off, power-good signal/contacts, output trim and internal OR-ing diode for paralleling/redundant operation are already built in. An active hold-up circuit provides ≥10 ms ride-through across the whole input range. Protection against short circuits, over-current, over-temperature and over-voltage is included as well. The RMD40-UW is presented in a compact 100 × 60 × 30 mm³ package while the RMD75-UW just measures 110 × 73 × 40 mm³. Connections are by block terminals or optionally by Cage Clamp terminals as suffix /PT and a DIN-rail mounting option is available for both versions. The units come with aluminum housing in IP20, the electronic part is conformally coated for OV2/PD2 environment and both families fulfill EN45545-2 - HL3 fire protection hazard level.

Product Navigator Directs Engineers to the right Component
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Learn more:
we-online.com
  • Industry News
  • 2026-01-14

Würth Elektronik introduces an online tool that simplifies the search for the right components. The Product Navigator helps users select electronic and electromechanical components through practical example applications and typical topologies. With the Navigator, Würth Elektronik refines an approach that has been proven in the Application Guide since 2021. The Application Guide is now fully integrated into the significantly expanded Product Navigator. The advantage: Developers can now find the products relevant to their application area more quickly, without having to work their way through extensive catalogs. The tool’s navigation offers the following application areas to choose from: Shielding and grounding, cable assembly solutions, line filters, power supplies, DC filters, thermal management, optoelectronics, power distribution, IC peripherals, human–machine interaction (switches and displays), high-frequency and wireless communication, as well as measurement and sensor technology. Each area offers typical topologies and additional content to support electronics developers in designing their applications.

Sampling of four Trench SiC-MOSFET Bare Dies for Power Semiconductors starts
  • Industry News
  • 2026-01-14

Mitsubishi Electric Corporation has started shipping samples of four trench SiC-MOSFET bare dies (chips not encased in protective housing) designed for use in power electronics equipment, such as electric vehicle traction inverters, onboard chargers, and power supply systems for renewable energy sources including solar power.

Protection Zener Diodes with Ratings up to 75 V
  • Product Release
  • 2026-01-13

Toshiba Electronics has added four products to its CUZ series of surge protection Zener diodes. The CUZ56V, CUZ62V, CUZ68V, and CUZ75V, with Zener voltages (VZ) of 56 V, 62 V, 68 V, and 75 V respectively, are designed for use in power supplies for data centers, network equipment, industrial systems, and system architectures with 48 V and above. They are designed to protect semiconductor devices against long pulse width switching surges and induced lightning surges, which can occur in the range of microseconds to milliseconds, as well as overvoltage pulses that are close to DC. While Toshiba’s TVS diodes specialise in ESD protection, these Zener products protect against surges while still providing electrostatic discharge (ESD) protection. All four products in this specific lineup share an absolute maximum power dissipation (PD) of 600 mW and a peak pulse current (IPP) rating of 5 A, according to IEC61000-4-5 at a peak transient of 8/20 µs. For the individual products, the measured VZ (min. to max.) ranges span from 52 V to 60 V (CUZ56V) up to 70 V to 79 V (CUZ75V), measured at a current (IZ) of 2 mA. Additionally, ESD voltages range from ±13 kV (CUZ56V) to ±23 kV (CUZ75V) under contact conditions, and 5 kV under air conditions. The dynamic resistance typically ranges from 3.1 Ω to 4.0 Ω, and the typical clamp voltage ranges from 112 V to 120 V. The diodes are housed in the SOD-323 (USC) package, which features gull-wing leads.

Larger Office in Japan opened
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Learn more:
rohde-schwarz.com
  • Industry News
  • 2026-01-12

Rohde & Schwarz has opened a larger office in Osaki/Japan, with increased capabilities. The location, which replaces the original one in Shinjuku, has significantly enhanced facilities for service, repair, calibration and engineering support of test equipment as well as increased space for hosting. A test system that combines EMC receivers and automation software from Rohde & Schwarz with the AIP EMC Chassis Dynamometer enables vehicle manufacturers and Tier 1s to obtain an evaluation of the EMC performance of their designs under realistic operational conditions. AIP has enhanced this system with R&S radar target simulators to also provide vehicle-in-the-loop testing of radars in a controlled environment. This R&S office in Osaki has a dedicated space for calibration of EMC equipment and is near AIP’s new office.

MEMS-Based Hot-Switched Power Panel Validated
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Learn more:
menlomicro.com
  • Industry News
  • 2026-01-05

Menlo Microsystems announced, in partnership with Microchip Technology, that it has successfully completed the hot switching validation of a MEMS-based 1000V/500A (0.5 megawatt) relay panel that is the basis platform for future development of advanced circuit protection systems for the U.S. Navy. This accomplishment marks the first-ever validation of a MEMS-based 0.5 megawatt hot-switched relay panel for naval applications in the United States and is a critical step in the Navy’s 10-megawatt Advanced Circuit Breaker program.
Menlo Micro has successfully advanced through the program’s multiple phases of advancing complexity demonstrating the performance and scalability of its Ideal Switch® technology for power applications. Validation testing of the latest phase was completed at Microchip Technology’s advanced power test facilities.

Chris Jacobs named Senior Vice President, Marketing and Product Strategy
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Learn more:
power.com
  • People
  • 2026-01-05

Power Integrations announced the appointment of Chris Jacobs as senior vice president for marketing and product strategy. Mr. Jacobs brings a wealth of experience in the semiconductor industry, with an outstanding record of product execution, customer acquisition and strategy development across a range of end markets. He joins Power Integrations from Micron Technology, where he served most recently as vice president and general manager for the automotive, industrial/multi-market and consumer market segments of the company’s multi-billion-dollar automotive & embedded business unit. Previously, Mr. Jacobs spent more than 25 years at Analog Devices, holding a succession of leadership roles including vice president for marketing and business development in the company’s power IC and module business and vice president and general manager for the autonomous transportation & automotive safety business unit. He holds an MBA from Boston College, an MS in electrical engineering from Northeastern University and a BS in computer engineering from Clarkson University. He has also completed executive leadership programs at Stanford University and MIT.

Fabio Necco Appointed as CEO
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Learn more:
camgandevices.com
  • People
  • 2026-01-05

Cambridge GaN Devices (CGD) announced the appointment of Fabio Necco as Chief Executive Officer. The move is designed to drive forward CGD’s entry into key markets. Necco takes over as CEO from CGD Co-founder, Giorgia Longobardi, who made the announcement, saying, "I am delighted to welcome Fabio to CGD and hand over the day-to-day leadership of the company while I channel my energy into my passion for bringing advanced, sustainable and energy-efficient power electronics solutions to market. Fabio, is the right person with the right skill set to take CGD into its next growth phase, and I shall do all I can to support his initiatives as I transition into my new role as CMO at CGD." Necco comes to CGD from onsemi, where he was vice president and division general manager with more than 25 years’ experience in power electronics, application engineering, vehicle electrification, and data centres, all primary market focus points of CGD. Necco said, "CGD is at an exciting juncture in its history. I have known CGD and Giorgia for years and have long been impressed with its success under her leadership. I am very excited about CGD’s unique technology and to have been chosen to lead our entire team to the next stages of product development as well as substantially increasing our presence in key markets."

Family of noise-eliminating, self-powered SiC Gate Drivers
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Learn more:
allegromicro.com
  • Product Release
  • 2026-01-05

Allegro MicroSystems announced the strategic expansion of its Power-Thru™ isolated gate driver portfolio with the launch of the AHV85003/AHV85043 chipset. Joining the AHV85311 integrated solution, this expanded family creates a complete ecosystem for high-voltage silicon carbide (SiC) designs in AI data centers, electric vehicles (EVs), and clean energy systems. The solution simplifies the design challenge in power conversion by eliminating the need for external isolated bias supplies for gate drivers. Allegro’s Power-Thru isolated gate drivers integrate signal and power across a single isolation barrier. This approach reduces common-mode capacitance in the system by up to 15x , addressing a major source of noise that impacts efficiency. They deliver up to a 20dB improvement in electromagnetic interference (EMI) performance, which boosts overall system efficiency and eliminates countless hours spent by designers resolving noise issues. In addition to addressing the physics of noise, the expanded Power-Thru portfolio is engineered to resolve critical business challenges. To ensure supply chain resilience, both the chipset and the existing AHV85311 integrated solution support a multi-source SiC strategy. With selectable gate-to-source voltages (Vgs) of 15V, 18V, and 20V, and adjustable regulated negative voltage, designers can easily swap between SiC FETs from different vendors without redesigning their boards.

Strategic Move extendsEelectronics Portfolio and Industry Production Footprint in EU
  • Industry News
  • 2026-01-01

ITG Electronics has acquired Max Holzinger & Co GmbH (MH), a Germany-based manufacturer of high-reliability components for a variety of industries. The acquisition marks a significant milestone in ITG’s long-term strategy to expand its European manufacturing footprint and strengthen regional supply capabilities. Under the new structure, MH will operate as an independent entity formally folded under ITG Deutschland GmbH, ITG Electronics’ European division. It will also carry the designation of a Member of ITG Companies, reinforcing its integration within ITG’s global family while maintaining its established identity, expertise, and customer relationships. The acquisition represents ITG’s continued European manufacturing investment, reflecting a strategic shift toward regionalized production. In 2015, ITG diversified manufacturing into Vietnam as part of a country-risk reduction initiative. A decade later, ITG is continuing this evolution by expanding its capabilities into Europe, bringing manufacturing closer to key customers across the continent and bolstering resilience through geographic diversity. "We are proud to welcome Max Holzinger & Co GmbH into the ITG family," said Martin Kuo, Director of Future at ITG Electronics. "This acquisition not only enhances our high-reliability and manufacturing capabilities, but also aligns with our long-term vision of regionalized production. With a trusted manufacturing partner based in Germany, we can better serve European customers who require precision, durability, and expedient support."

Unlock the Future of Electronics Manufacturing: productronica China Set to Open in March 2026
  • Event News
  • 2025-12-28

The Asian electronics manufacturing industry is once again turning its attention to Shanghai, as productronica China 2026 is set to take place at the Shanghai New International Expo Centre (Halls E1-E5, W1-W4) from March 25 to 27, 2026. This exhibition is expected to span nearly 100,000 square meters and will bring together over 1,000 high-quality companies in the electronics manufacturing industry. The exhibition is dedicated to presenting an event that integrates innovative technologies, cutting-edge products, and efficient business exchanges in the Asian electronics manufacturing industry. The 2026 floor plan has been released to accurately align with business opportunities. The exhibition will continue to take place in Halls E1-E5 and W1-W4. Each exhibition hall is arranged based on categories of exhibits and application areas, featuring a well-structured and strategic layout. This design allows exhibitors to effectively showcase their core strengths while enabling visitors to efficiently identify and focus on their target products. The exhibits cover the entire electronics manufacturing industry chain, including component manufacturing, test and measurement, quality assurance, new energy vehicle inspection technology, surface mount technology (SMT), electronics manufacturing services (EMS), automated electronic assembly, clean technology, cable processing, electronic chemical materials, dispensing and bonding technology, robotics, AGV, intelligent warehousing, sensor technology, motion control and drive technology,new energy vehicle technology as well as automotive PLC Industrial control system. The visitor registration is going on heatedly, please register now!

Successful Premiere of the PCIM Asia New Delhi Conference
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Learn more:
pcim.in
  • Event News
  • 2025-12-27

Under the theme "Agent of Change", the PCIM held its first conference in India. The Dr. Ambedkar International Conference and Exhibition Centre in New Delhi was the place to be on 9 – 10 December, with an impressive audience of industry experts taking in presentations by renowned companies in power electronics along with a targeted overview of future-oriented investment and expansion opportunities. The PCIM Asia New Delhi Conference presented itself as a force driving technological progress in the region, aiming to create a forward-thinking platform that will foster strategic partnerships and promote collaboration among major players in industry, research, and politics. With over 520 participants, more than 120 speakers, and over 75 presentations, the Indian edition of the PCIM Conference also featured professional exchange at the highest level. Current research results and technical innovations in the field of power electronics were explained in detail, providing valuable impetus for the industry’s further development. In addition, illustrative poster presentations
offered insights into pioneering projects and the results they have already achieved. At the center of the event, however, was naturally the conference, with the accompanying expo featuring a total of 50 exhibitors showing off their latest products and applications. Companies such as Mitsubishi Electric, Infineon, and Rohm were on hand in New Delhi to experience the dynamic Indian market for power electronics first-hand. The successful premiere of the PCIM Asia New Delhi Conference has now set the stage for further inspiring events focused on future-oriented technologies and strategic exchange, which are sure to continue driving the development of India’s power electronics industry.

Manufacturing Collaboration and Business Partnership in India
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Learn more:
rohm.com
  • Industry News
  • 2025-12-22

ROHM and Tata Electronics announced that they have entered into a strategic partnership for semiconductor manufacturing in India for both Indian and global markets. This partnership aims to leverage the expertise and ecosystem of both the companies in order to expand business opportunities for both ROHM and Tata Electronics, thereby further strengthening the relationship between the semiconductor industries of Japan and India. As an initial focus, ROHM and Tata Electronics will establish a manufacturing framework for power semiconductors in India by combining ROHM’s leading device technologies with the advanced backend technologies of Tata Electronics. In addition, by integrating the sales channels and networks, the partnership will create new business opportunities in the Indian market and deliver higher-value solutions to a wide range of customers. As the first step in this collaboration, Tata Electronics will assemble and test ROHM’s India-designed automotive-grade Nch 100V, 300A Si MOSFET in a TOLL package, targeting mass production shipments by next year. The companies will also explore co-development of high-value packaging technologies in the future. Both companies will combine efforts to market the products manufactured through this collaboration.

High Voltage Fuses for Industrial and Energy Applications
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Learn more:
schurter.com
  • Product Release
  • 2025-12-19

The EKO series from Schurter is designed for high-voltage applications, providing protection up to 1000 VDC and current ratings from 50 to 1100 A. With up to 50 kA DC breaking capacity it is suited for charging infrastructure, energy storage systems, and industrial power applications. The EKO series withstands mechanical vibration, shock, chemical exposure, and extreme temperatures from -40 °C to +125 °C. Its ceramic housing and tin-plated copper alloy terminals ensure durability and stable electrical characteristics even under harsh conditions. The devices are available with Flush End, DIN-Rail, US Style Bolted Tag or Bolt-on. Optional indicators and microswitches enable easy status monitoring. The EKO series meets IEC, UL, and GB/T standards and complies with CE, RoHS, and REACH directives.

Collaboration on SiC Power Semiconductor Modules with Mechanical Compatibility
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Learn more:
fujielectric.com
  • Industry News
  • 2025-12-19

Fuji Electric announced an agreement with Bosch to collaborate on SiC power semiconductor modules for electric vehicles that feature package compatibility. By flexibly modifying the size and number of mounted chips, these modules can accommodate a wide range of power requirements and OEM circuit configurations. Moving forward, both companies intend to develop SiC power semiconductor modules with mechanical compatibility in terms of package outer dimensions and terminal positions. This will enable either module to be integrated into an inverter system without additional mechanical modifications, thereby minimizing the adjustment effort required for customers when using both module options in their systems. This collaboration aims to shorten design periods and contribute to diversifying procurement sources. As a result, engineers will be able to use SiC power semiconductor modules from both companies without altering their inverter system specifications, leading to reduced design time and diversified procurement. Furthermore, both companies plan to jointly develop user application technologies related to cooler design and various terminal connections when integrating SiC power semiconductor modules into inverter systems, and plan to provide technical support to customers.

Thermal Jumper Chip Series
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Learn more:
bourns.com
  • Product Release
  • 2025-12-18

Bourns introduced its BTJ Series Thermal Jumper Chips designed to provide effective thermal dissipation in a compact form factor. These devices provide high thermal conductivity while also having insulating properties to help protect and prolong system component lifespans. Because the thermal jumper chips are able to quickly dissipate heat and do not conduct electricity, they have no impact on system operation. Available in SMD packaging, Bourns® Thermal Jumper Chips provide an excellent thermal dissipation solution for a variety of mobile devices and electronic equipment that include power supplies, converters and RF and GaN amplifiers. Furthermore, the advanced design takes advantage of the chips’ insulating properties so the space between the heating element and the heat detection element can be filled to enable highly accurate heat detection. These features also help reduce the temperature rise of key components contributing to improved reliability at the system level. The Bourns® BTJ Series Thermal Jumper Chips are available now and are RoHS compliant and halogen free.

Open-loop hall-effect Current Sensors for electric and hybrid Vehicles
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Learn more:
littelfuse.com
  • Product Release
  • 2025-12-18

Littelfuse announced the release of six new automotive current sensors designed to enhance electric and hybrid vehicle performance, efficiency, and functional safety. The Littelfuse automotive qualified sensors provide precise, isolated current measurement across battery-management, motor-control, and pyro-fuse safety systems. Utilizing open-loop hall-effect technology, the sensors deliver reliable performance in compact, bus-bar-mounted form factors. Output configurations include analog-voltage and digital (CAN/LIN) communication, giving system designers flexibility in integrating with existing EV architectures. As EV and hybrid systems evolve, engineers face growing demands for high accuracy, fast response, and compliance with functional-safety standards. This current-sensor family helps OEMs and Tier 1 suppliers meet those challenges by offering scalable, ASIL-capable solutions that simplify design while improving efficiency, safety, and overall system reliability. Across the automotive qualified product family, nominal current ranges extend up to ±1500 A, with high total-error performance and minimal thermal drift. Models featuring CAN 2.0B communication include AUTOSAR E2E Profile 1A diagnostics and ASIL-C-capable current measurement, enabling integration into safety-critical systems such as battery control or disconnect units.

High-Voltage DC Contactors support Functional Safety
  • Product Release
  • 2025-12-17

TDK Corporation introduced the HVC27*MC series of high-voltage DC contactors equipped with a mechanically linked, normally-closed auxiliary contact (mirror contact) compliant with IEC 60947-4-1. This feature provides precise contact position feedback for safety-critical applications in electric mobility and industrial energy systems. Measuring 86.5 x 95 x 44 mm³ and "weighing" 530 g, these gas-filled contactors are suited for battery disconnect units (BDUs), energy storage systems (ESS), DC fast charging, and uninterruptible power supplies (UPS). Designed for DC voltages of 1000 V, the HVC27*MC series is available in 300 A, 400 A, and 500 A continuous current versions, with a single-shot capability of up to 900 A at 1000 V in less than 20 ms. The safety component is fully bidirectional with polarity-free main terminals. A hermetically sealed and gas-filled ceramic arc chamber takes care of a safe disconnection. The normally closed auxiliary contact reliably reports the main contact state, enabling the immediate detection of switching anomalies or failures. Offered in versions with 12 V or 24 V coil voltage and UL, CE, and UKCA certifications, the contactors are ready for global deployment. Typical applications are in commercial vehicles, industrial machinery, and high-voltage mobility systems.

Protection for sensitive Power Semiconductors
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Learn more:
bourns.com
  • Product Release
  • 2025-12-17

Bourns expanded its POWrFuse™ High-Power Fuses with the PF-SRC50E Series. Designed to protect today’s more sensitive power semiconductors, this series features 500 V DC and 690 V AC rated voltage with an interrupting rating of up to 100 kA. Delivering higher voltage protection support in a compact footprint (17.5 mm diameter x 46 mm length), these fuses are suited for power inverters, converters, rectifiers, AC/DC drives, Uninterruptible Power Supplies (UPS) and reduced voltage motor starters. The PF-SRC50E Series is engineered to meet the requirements of UL 248-13 and IEC 60269-4 (aR class) standards for dependable protection and safe operation in high-voltage AC and DC systems. The devices are offered in a bolt-down package.

PMIC capable of harvesting full-range of hybrid indoor-outdoor PV Cells
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Learn more:
e-peas.com
  • Product Release
  • 2025-12-17

e-peas will made the public debut of its AEM15820 power management IC (PMIC), the a single-chip PMIC capable of spanning the full dynamic range of hybrid indoor-outdoor PV cells. These hybrid PV cells have a wide power output that can vary from microwatts under indoor lighting to several watts when in direct sunlight. To manage this range, multi-PMIC solutions have previously been required, adding cost and complexity to the overall system designs. They are being implemented in a wide range of consumer applications, including sports or hiking computers and self-charging headphones, and will enable many more, such as PV-charged earbud cases and e-readers. Additional markets include remote security cameras, smart glasses, power banks, and smart-backpack power modules. It is optimized for use with both batteries and lithium-ion capacitors (LiC) and features an ultra-low-power cold start of 5 µW at 275 mV.

Acquisition to Drive Custom Power IC Leadership
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Learn more:
cyientsemi.com
  • Industry News
  • 2025-12-17

Cyient Semiconductors has signed a definitive agreement to acquire a majority stake in Kinetic Technologies, a global leader in power management, high-performance analog and mixed-signal ICs for a total consideration of up to USD 93 Mn. The combination establishes a scaled platform in the $40B+ power semiconductor market, accelerating Cyient Semiconductors’ growth trajectory across data centers, electrification, automotive, networking, industrial automation, and the fast-emerging edge AI compute segment. This acquisition is a game-changer for Cyient Semiconductors’ ambition to establish India’s first ASIC-led custom power semiconductor powerhouse. Bringing together Cyient Semiconductors’ design leadership with Kinetic Technologies’ proven portfolio of high-performance analog and mixed-signal ICs - including power conversion solutions, display power, protection, and interface solutions - the company is positioned to take a strong leadership position in high-growth markets.

Brushed DC Motor Driver Ics
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Learn more:
rohm.com
  • Product Release
  • 2025-12-17

ROHM has developed two additional motor driver ICs for brushed DC motors, BD60210FV (20 V, 2 channels) and BD64950EFJ (40 V, 1 channel). They are intended for use in home and office appliances such as refrigerators, air conditioners, printers, and robotic vacuum cleaners. The devices achieve a standby current of typically 0.0 µA (maximum: 1.0 µA). The BD60210FV can function as a dual H-bridge (2ch) motor driver with direct PWM control, capable of driving two DC brush motors, a bipolar stepper motor driver, or solenoid driver. Its H-bridge circuit configuration eliminates the need for a boost circuit, minimizing external components and contributing to space-saving and simplified design. It supports input voltage from 8 V to 18 V and 1 A/phase continuous current and 4 A/phase peak current. The BD64950EFJ features a single H-bridge (1ch) that supports both direct PWM control and constant current PWM control. Its low on-resistance design reduces heat generation. With a 40 V withstand voltage and 3.5 A continuous current (6 A peak), it is suitable for high-powered, high-voltage (24 V) DC brush motor applications.

eBook provides Guidance on Designing 48V Power Delivery Networks
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Learn more:
vicorpower.com
  • Industry News
  • 2025-12-16

Vicor has published "Accelerate your move to a high-performance 48V power delivery network", a new 34-page eBook. This resource provides engineers and system designers with helpful tips and concepts to consider to transition from 12V power delivery networks (PDNs) to 48V. This free in-depth guide will help optimize power delivery to gain a competitive edge in the market. Today computing, automotive, and industrial applications demand higher performance and efficiency and traditional 12V architectures are reaching their limits. Higher performing 48V architectures that reduce I²R losses are emerging as the obvious solution which not only unlocks power system capabilities, it also enables new levels of innovation. Filled with useful insights and real-life applications, the informative eBook provides expert guidance on designing 48V power delivery networks to enhance the performance, efficiency and reliability of industrial products. Engineers can learn how the 48V PDN evolved, how to overcome power design challenges and how others have implemented successful power delivery networks that deliver competitive advantage. Readers can also learn how to leverage high-performance power modules to quickly prototype and implement a 48V PDN. "With the rapid growth of AI and the infusion of higher voltage electrification, power delivery can provide a competitive advantage," said David Krakauer, VP of Marketing, Vicor. "This eBook explores why 48V distribution is quickly becoming the standard for next-generation designs, delivering benefits such as reduced conduction losses, improved thermal performance and smaller, lighter power delivery networks. This eBook offers the insights you need to accelerate your transition from 12V to 48V."

Small Ferrite-Core wirewound Chip Inductors
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Learn more:
coilcraft.com
  • Product Release
  • 2025-12-16

Coilcraft’s 016008F series is claimed to be the world’s smallest wirewound ferrite chip inductor, designed for high-frequency applications where board space is constrained. With dimensions of 0.5 mm x 0.25 mm x 0.38 mm, it offers a DCR of 0.18 Ohms. Typical applications are compact devices such as smartphones, IoT modules, and wearables.

PSMA Magnetics Committee and PELS TC2 High Frequency Magnetics Workshop
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Learn more:
psma.com
  • Event News
  • 2025-12-15

The PSMA Magnetics Committee and IEEE PELS are currently planning to conduct the eleventh Power Magnetics at High Frequency Workshop on Saturday, March 21, 2026, which is the day before and at the same venue as APEC 2026 in San Antonio, TX. The 2026 workshop will build on the ongoing dialogue generated throughout the first ten workshops. The purpose of this workshop is to explore recent improvements in magnetic materials, coil (winding) design, construction, and fabrication, as well as evaluation techniques, characterization methods, and modelling and simulation tools. The workshop targets the advancements deemed necessary by the participants for power magnetics to meet the technical expectations and requirements of new market applications where higher operating frequencies and emerging topologies are driven by continuous advances in circuits topologies and semi-conductor devices. The target audiences for the 2026 Power Magnetics @ High Frequency workshop include the designers of power magnetic components for use in electronic power converters, those who are responsible to implement the most technologically advanced power magnetic components necessary to achieve higher power densities, specific physical aspect ratios such as low profile, higher power efficiencies and improved thermal performance. The target audience also includes people involved in the supply chain for the power magnetics industry ranging from manufacturers of magnetic materials and magnetic structures, fabricators of magnetic components, providers of modelling and simulation software as well as manufacturers of test and characterization equipment.

FOC-based BLDC Motor Control with Power Regulation up to 15A
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Learn more:
mikroe.com
  • Product Release
  • 2025-12-12

BLDC FOC 2 Click is a new motor control Click board™ from MIKROE. The compact Click add-on boards enable developers to rapidly provide proof-of-concept, then prototype and code new embedded projects. BLDC FOC 2 Click provides provides robust and reliable control of three-phase brushless DC (BLDC) motors using advanced Field-Oriented Control (FOC) techniques, ensuring smooth operation, high efficiency and low acoustic noise. Comments Nebojsa Matic, CEO of MIKROE: "This new Click board is ideal for automotive and industrial applications such as battery cooling fans, radiator fans, and fuel or oil pump control systems. It is part of our 140+ strong family of motor control Click boards and over 850 projects - with working code - featuring the BLDC FOC 2 Click can be found on MIKROE’s embedded projects platform, EmbeddedWiki." BLDC FOC 2 Click is based on the A89307, an automotive FOC BLDC motor controller from Allegro Microsystems, designed to deliver up to 15A of output current across a wide voltage range from 4.4V to 30V. It supports multiple operating modes, including constant speed, torque, power and open-loop control, while offering flexible configuration via EEPROM and I2C interface for parameter setting, ON/OFF control and speed feedback. It also integrates Allegro’s proprietary Soft-On Soft-Off (SOSO) feature for quiet transitions, comprehensive protection mechanisms, and both analog and digital control mode.

Co-Development on SMPS Solutions for AI Server Power Supplies in Korea
  • Industry News
  • 2025-12-11

The French company Wise Integration and the Korean companies Powernet and KEC have signed a strategic memorandum of understanding (MoU) to co-develop next-generation switched-mode power supply (SMPS) solutions designed specifically for AI server applications in South Korea. The partnership aligns with the country’s push to expand AI infrastructure and build out the next generation of high-density data centers. Under the agreement, Wise Integration will supply its GaN power devices, digital-control expertise and technical support. Powernet Technologies will lead the development of SMPS designs using Wise’s WiseGan® and WiseWare® technologies. KEC Corporation will manage backend manufacturing, including module integration and system-in-package production tailored to the thermal and reliability demands of AI-server racks. The collaboration builds on an earlier partnership between Wise Integration and Powernet, launched to serve OEMs that require compact, digitally controlled power-supply systems for faster, smaller and more energy-efficient electronic equipment.

Dual-Output 400 W Module for Configurable Power Supplies
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Learn more:
advancedenergy.com
  • Product Release
  • 2025-12-11

Advanced Energy Industries introduced a dual-output 24 V/24 V module for its NeoPower™ family of configurable power supplies, delivering up to 400 W (200 W per output) in a compact 2.5-inch form factor. This added module enables up to a total of 16 isolated outputs per power supply, streamlining system design for engineers in industrial, medical and test environments. Its power density is 18 W/in³. The digitally controlled module is certified according to IEC/EN/UL 62368-1 (industrial), IEC/EN 60601-1 (medical), and SEMI F47. Target applications include medical, industrial, semiconductor and test and measurement.

Strategic Collaboration of Automotive Tier-1 Supplier and Semiconductor Manufacturer
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Learn more:
onsemi.com
  • Industry News
  • 2025-12-11

Onsemi extended its strategic engagement with FORVIA HELLA with the adoption of onsemi’s PowerTrench® T10 MOSFET technology across its automotive platforms. Onsemi’s PowerTrench T10 MOSFET technology delivers high efficiency with low conduction and switching losses, enabling high power density in a compact footprint. The collaboration is expected to "deliver smarter automotive power solutions with superior efficiency and optimized performance".

Solder Paste for High Print Consistency and Easy Cleanability
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Learn more:
indium.com
  • Product Release
  • 2025-12-11

Indium Corporation announced the global availability of SiPaste® C312HF, a halogen-free, cleanable solder paste formulated for fine-feature printing. Designed with Type 7 powder for aperture sizes down to 60µm, it enables fine-feature printing in advanced system-in-package applications. SiPaste C312HF boosts process yields that combine stencil print transfer efficiency and stencil life with consistent printing, response-to-pause, and reflow performance. SiPaste C312HF post-reflow flux residue can be cleaned with a standard cleaning process using semi-aqueous chemistries or a saponifier, or it can be used as a standard no-clean paste in processes where post-reflow cleaning is not required. Indium Corporation’s SiPaste series is specifically designed for fine-feature printing with fine powders ranging from Type 5 to Type 8, including the SiPaste C312HF with Type 7 powder. The products help Avoid the Void®, reduce slumping, and demonstrate consistent superior printing performance.

Power Factor Correction Market to surpass $8.2 Billion by 2033
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Learn more:
marketintelo.com
  • Industry News
  • 2025-12-11

The global Power Factor Correction (PFC) Market is poised for substantial growth, projected to rise from an estimated $4.6 billion in 2024 to approximately $8.2 billion by 2033, reflecting a robust Compound Annual Growth Rate (CAGR) of 6.5 % over the forecast period. This is one of the results of a market research report from Market Intelo. The PFC market’s expansion is fueled by a combination of regulatory pressure, cost-saving benefits, and technological advancements. The key growth catalysts are strict regulatory compliance, energy cost optimization, rapid industrialization and urbanization as well as equipment protection. The market researchers have figured out the following emerging technological trends: Firstly, there is a dominance of active PFCs, which means a shift from traditional passive systems to Active Power Factor Correction (APFC) for better efficiency, real-time response, and harmonic mitigation. The second trend is smart grid compatibility, because advanced PFC solutions are essential for grid stability, managing power fluctuations from intermittent renewable energy sources like solar and wind. The third trend are modular and compact designs: Developing smaller, more efficient PFC devices for integration into a broader range of applications, including smaller commercial units and EV charging infrastructure. Therefore, the company says that the power factor correction market is on a trajectory to become an essential component of the global Digital Energy Transition. The convergence of AI-driven power quality analytics, miniaturization of components, and a relentless global focus on decarbonization is said to ensure sustained, high-value growth through 2033. PFC solutions will evolve from mere corrective devices to fully integrated, intelligent energy optimization hubs within the industrial and commercial electrical infrastructure.

Power Semiconductors: Global Distribution Network
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Learn more:
navitassemi.com
  • Industry News
  • 2025-12-11

Navitas Semiconductor has expanded its distribution agreement with Avnet, making Avnet a globally franchised strategic distribution partner for Navitas. The deal is part of the ongoing consolidation of Navitas’ franchised distribution partners. Under the terms of the partnership, Avnet will supply technical and commercial expertise for Navitas’ GaN and SiC, high-voltage and high-power wide bandgap semiconductor devices. This will better support the growth of AI data centers, high performance computing, renewable energy, grid infrastructure, and industrial electrification.

Surface-Mount Fuse
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Learn more:
schurter.com
  • Product Release
  • 2025-12-10

With the Surface-Mount Fuse USE 2410 SCHURTER introduces a quick-acting F fuse which is completely without internal solder joints. AEC-Q200 tested, sealed against potting compounds and designed for extreme temperatures, the USE 2410 is intended for protection in applications ranging from industrial and automotive to medical technology. It is designed for 125-250 VAC and 86-125 VDC. In the temperature range from -55 °C to 125 °C the breaking capacity is up to 200 A, while the rated currents are specified from 0.6 to 10 A. Manufactured from UL 94V-0 materials – fiber-reinforced plastic and gold-plated copper terminals – the fuse is certified to UL, VDE, RoHS and REACH. Typical applications include battery-operated systems, LED drivers, ballasts, medical and industrial equipment, power supplies, and white goods. In automotive (IATF 16949) or aerospace, it protects against overload and short circuit.

Michael Budde elected President of ESIA
  • People
  • 2025-12-10

The General Assembly of the European Semiconductor Industry Association (ESIA) has elected Michael Budde, President Mobility Electronics at Bosch, as the organisation’s new President for the next two years. ESIA represents and promotes the common interests of the Europe-based semiconductor industry towards the European institutions and stakeholders. Mr Budde is succeeding Infineon Technologies’ CEO Jochen Hanebeck. Michael Budde has served as divisional chief executive since October 2022. His career within Bosch spans over two-and-a-half decades of leadership experience and garnered him comprehensive expertise of the automotive industry. Mr Budde had gathered insights in electrical drives, battery systems, and various sales & marketing roles, including an international assignment in the United States. Under his guidance, Bosch has strengthened its position in semiconductor-based solutions for consumer and mobility applications, leveraging his deep understanding in the automotive industry and a close collaboration with OEMs. He holds a degree in mechanical engineering from the Rheinische Fachhochschule (RFH) in Cologne, Germany.

Current Sense Resistor
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Learn more:
seielect.com
  • Product Release
  • 2025-12-10

Stackpole’s CSSU2512 current sense resistor shows a 5-watt power rating in a standard 2512 footprint. Its all-metal construction and thermally conductive design substantially achieves thermal performance on par with other 2512-size current sense chips rated at just 3 W. The devices are available in resistance values from 1 to 10 mΩ, with 1 % tolerance and a 50 ppm temperature coefficient of resistance (TCR). The resistor complies to AEC according to CSSU2512.

1200 V SiC Modules
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Learn more:
semiq.com
  • Product Release
  • 2025-12-10

SemiQ has expanded its third-generation QSiC™ MOSFET product line by seven devices, including high-current S3 half-bridge (for example GCMX2P3B120S3B1-N), B2T1 six-pack (e. g. GCMX020A120B2T1P) and B3 full-bridge packages like the GCMX008B120B3H1P. The devices are engineered for current capabilities of up to 608 A and a junction-to-case thermal resistance of just 0.07 °C/W (in the 62 mm standard S3 half-bridge format). The six-pack modules integrate the three-phase power stage and have an RDSon range of 19.5 to 82 mΩ. They are designed for motor drives and advanced AC/DC converters. The full-bridge modules deliver current capabilities of up to 120 A and an on-resistance down to 8.6 m&ohm,. This combination, coupled with a thermal resistance of 0.28 °C/W is intended e. g. for single-phase inverters and high-voltage DC/DC systems. The devices are breakdown voltage tested to over 1350 V.

CWIEME Berlin unveils Electric Motor Forum
  • Event News
  • 2025-12-10

CWIEME Berlin, an event for coil winding, transformer, electric motor and e-mobility technologies, has announced the launch of the Electric Motor Forum, a brand-new feature debuting at the 2026 edition of the show in Berlin, May 19 - 21. The Electric Motor Forum will provide a dedicated space for the entire European electric motor industry to come together, from automotive and industrial manufacturers to HVAC and consumer applications, in an environment designed to foster collaboration, innovation and community. Developed in response to visitor feedback and the growing demand for clearer product zoning, the new forum will serve as a strategic cluster that mirrors the success of the 2025 Transformer Hub in Hall 27, which became one of the show’s best-attended areas. The Electric Motor Forum will feature a vibrant mix of exhibition stands, networking areas and interactive content, including panel discussions, roundtables and expert-led talks. Content will explore key themes such as supply chain resilience, automation and sustainable materials. An Innovation Zone, dedicated Power Hub and Electric Motor Stage will help create a true content hub - not just a hall, but a dynamic meeting point for suppliers, buyers and policymakers to discuss shared challenges and opportunities.

SiC MOSFET Family extended
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Learn more:
infineon.com
  • Product Release
  • 2025-12-10

Infineon Technologies launches packages for the CoolSiC™ MOSFET 750 V G2 technology for high system efficiency and power density in automotive and industrial power conversion applications. These devices are now available in a range of packages, including Q-DPAK and D2PAK, offering a portfolio with typical RDS(on) values up to 60 mΩ at 25 °C. Typical applications are, for example, onboard chargers and HV-LV DC/DC converters in the automotive sector, server and telecom SMPS, along with EV charging infrastructure in the industrial applications. RDS(on) values of 4 mΩ enable applications that require exceptional static-switching performance, such as eFuse, high-voltage battery disconnect switches, solid-state circuit breakers, and solid-state relays. One of the key features of the CoolSiC MOSFET 750 V G2 technology is its top-side cooled Q-DPAK package, which provides adequate thermal performance and reliability. Additionally, the CoolSiC MOSFETs 750 V G2 offer a combination of a typical threshold voltage VGS(th) of 4.5 V at 25 °C. Furthermore, the technology allows for extended gate driving capabilities, supporting static gate voltages of up to -7 V and transient gate voltages of up to -11 V.

Power Management Resource Center
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Learn more:
mouser.com
  • Industry News
  • 2025-12-09

Mouser Electronics announces its comprehensive power management resource center. With the proliferation of compact, high-performance, and battery-operated devices, power management design is critical to achieving optimal performance. By leveraging new advancements in power management, such as smart grid management technology, DC microgrids can enhance energy efficiency and power quality. Their native DC architecture provides seamless integration with DC loads and renewable energy systems, such as EV charging infrastructure. Another method of power management is energy harvesting, where improved conversion efficiency in solar, motion, and thermal harvesting techniques extends battery life or even enables completely battery-free operation. For chip-level power and performance, modern embedded systems today utilize configurable logic blocks (CLBs). CLBs enable hardware-based functions, such as timing control and power sequencing, resulting in faster response times, reduced CPU load, and lower power consumption. Together, these advancements create a balanced system where power is generated, distributed, and consumed with maximum efficiency, fundamentally improving power management in electronics. Mouser’s technical team and trusted manufacturing partners tailor the resource center content to provide a trusted source of articles, blogs, eBooks, and new products from top manufacturers for power management. The hub also offers infographics on battery energy storage systems (BESS), helping professionals understand the system complexities and how to select the best-suited components. For engineers looking to stay ahead of the accelerating pace of advanced power management, the resource center serves as a valuable resource.

Asymmetrical TVS Diodes for 12 V Battery Systems
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Learn more:
littelfuse.com
  • Product Release
  • 2025-12-09

Littelfuse launched the TPSMB Asymmetrical Series TVS Diodes (TPSMB2412, TPSMB2616, TPSMB2818, TPSMB3018). These devices are specifically designed for 12 V battery anti-reverse protection, delivering superior performance compared to traditional symmetrical bi-directional TVS solutions. Unlike conventional approaches that often require multiple components, the TPSMB Asymmetrical Series provides a single-component solution that protects anti-reverse MOSFETs, diodes, and DC/DC converter ICs from both positive and negative surges. The asymmetrical clamping capability ensures much lower clamping voltage from negative surges, allowing engineers to select lower-rated MOSFETs or diodes. This approach reduces conduction losses, simplifies design, and lowers overall BOM costs. It provides asymmetrical protection with low positive clamping (24–30 V) and low negative clamping (12–18 V). A single device integrated in a DO-214AA surface-mount package replaces multiple Zeners/TVS diodes, while the peak pulse power is 600 W with a response time of less than 1 ns and up to 30 kV ESD dissipation. The devices are automotive-qualified according to AEC-Q101 and operate with a junction temperature range of -65 °C to 175 °C.

Power Partnership for in-orbit AI Processing
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Learn more:
vicorpower.com
  • Industry News
  • 2025-12-09

Vicor has partnered with Spacechips, developer of space-electronics solutions for satellites and spacecraft, to design power-dense, reliable transponders for in-orbit AI processing. Spacechips’ AI1 transponder is radiation-tolerant, rugged and compact featuring Vicor’s FPA power modules (Factorized Power Architecture). The demand for smaller satellites with sophisticated computational capabilities and reliable and robust onboard processor systems to support the 5 to 10 year duration of a mission, is pushing the limits of the latest ultra deep submicron FPGAs and ASICs and their power delivery networks. These high-performance processors have demanding, low-voltage, high-current power requirements and their system design is further compounded by the complexities of managing thermal and radiation conditions in space. In response, Spacechips has introduced its AI1 transponder, a small, on-board processor card containing an ACAP (Adaptive Compute Acceleration Platform) AI accelerator. The smart, re-configurable receiver and transmitter delivers up to 133 tera operations per second (TOPS) of performance that enables new Earth-observation, in-space servicing, assembly and manufacturing (ISAM), signals intelligence (SIGINT), and intelligence, surveillance and reconnaissance (ISR) and telecommunication applications to support real-time, autonomous computing while ensuring the reliability and longevity to complete longer missions. FPA is a power delivery system design that separates the functions of DC/DC conversion into independent modules. In Vicor’s radiation tolerant modules, the bus converter module (BCM) provides the isolation and step down to 28 V, while the pre-regulator module (PRM) provides regulation to a voltage transformation module (VTM) or current multiplier that performs the 28 V DC transformation to 0.8 V.

Silicon Valley Headquarters and Munich R&D Office opened
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Learn more:
empowersemi.com
  • Industry News
  • 2025-12-09

Empower Semiconductor announced an expansion of its global operations with the opening of its headquarters in Milpitas, California, and the establishment of a dedicated research and development (R&D) center in Munich, Germany. These strategic investments follow the company’s series D financing round. The expanded Milpitas space is purpose-built to support rapid development of Empower’s next-generation vertical power-delivery platforms and derivatives. The Munich site serves as a regional innovation hub.

GaN Communications Manager appointed
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Learn more:
epc-co.com
  • People
  • 2025-12-08

As of January 1, 2026 Maurizio Di Paolo Emilio will become Director of Global Marketing Communications of EPC – Efficient Power Conversions. Maurizio holds a Ph.D in physics and is a content editor & technical writer, who has put specific focus on power electronics, wide bandgap semiconductors, renewable energy as well as space electronics. He decided to take this career step in order to be "at the forefront of the transition from silicon to the GaN era". He thinks that the rise of GaN is not just a simple technological upgrade but a fundamental change with profound impact on the world of AI (Artificial Intelligence) including scalability, sustainability, and ethics. Maurizio aims "to craft a communication strategy that blends technical storytelling with technological innovation, helping designers and product teams navigate complex technologies".

Strategic Partnership to accelerate GaN Adoption in India
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Learn more:
navitassemi.com
  • Industry News
  • 2025-12-08

Navitas Semiconductor and Cyient Semiconductors, a provider of ASIC, ASSP and power solutions, have announced a strategic long-term partnership intended to advance the adoption of GaN technology in India and establish a complete, end-to-end GaN ecosystem. Through this partnership, Navitas Semiconductor and Cyient Semiconductors intend to co-develop GaN products, digital and mixed signal ICs, GaN based system modules and design enablement platforms targeting India’s high voltage, high power market segments such as AI data centers, electric mobility, performance computing, energy grid infrastructure and industrial electrification. The partnership seeks to build a robust local supply chain and manufacturing ecosystem in support of the Indian Government’s "Make in India" initiative. In addition, through this partnership Navitas and Cyient Semiconductor aim to deploy IC technology in accelerating solution development for high voltage and high-power markets. This is expected to include products based on Navitas’ existing GaN technologies, along with new products tailored for India’s unique market needs. This initiative is intended to empower Indian design houses and OEMs with locally sourced GaN components and manufacturing support, enabling faster development cycles and reducing barriers to GaN adoption in India.

Foundry Service for SiC MOSFETs
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Learn more:
xfab.com
  • Industry News
  • 2025-12-04

Through its XbloX platform, the analog/mixed-signal and specialty foundry X-FAB is offering direct access to a standardized yet flexible set of SiC process technologies that accelerate the development of advanced power devices. From rapid prototyping to full production, the modular and fully scalable XbloX platform helps SiC device developers to expedite engineering assessments and technology release, with production starts that are claimed to be up to nine months faster than traditional methods. The standardized module configuration of the XbloX WBG discrete foundry model imparts two major benefits for those designing or refining advanced SiC devices. Firstly, X-FAB takes on process development activities with the introduction of a Process Installation Kit (PIK), where design and implant recipes provide the key differentiators. Secondly, the use of XbloX takes care that wafer manufacturing at X-FAB becomes a highly scalable activity in line with application requirements, differing considerably from the less scalable production provided by a traditional foundry model for customer-specific SiC technologies. The planning phase, for example, is claimed to be up to six times shorter than that required by conventional approaches.

SiC MOSFETs in TOLL package
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Learn more:
rohm.com
  • Product Release
  • 2025-12-04

ROHM has begun mass production of the SCT40xxDLL series of SiC MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, these packages offer approximately 39 % improved thermal performance. This enables high-power handling despite their compact size and low profile. It is suited for industrial equipment such as server power supplies and ESS (Energy Storage Systems) where the power density is increasing, and low-profile components are required to enable miniaturized product design. The thickness of the devices is 2.3mm thickness – roughly half that of conventional packaged products. Furthermore, while most standard TOLL package products are limited by a drain-source rated voltage of 650 V, these products support up to 750 V. This allows for lower gate resistance and increased safety margin for surge voltages, contributing to reduced switching losses. The lineup consists of six models with on-resistance ranging from 13 mΩ to 65 mΩ.

Film Capacitors for the Mains Input
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Learn more:
we-online.com
  • Product Release
  • 2025-12-03

Würth Elektronik introduced a series of WCAP-FTY2 film capacitors which is optimized for use in mains noise suppression and complies with X1 or Y2 safety classes in accordance with IEC 60384-14. The high impulse dielectric strength compared to X2 capacitors, along with other product-specific parameters, is confirmed by VDE with ENEC10 certification. The company’s WCAP-FTY2 series film capacitors are interference suppression capacitors for use as X1 or Y2 capacitors. When used as an X1 capacitor, it is placed between the phase (L) and neutral conductor (N). In a Y2 application, the capacitor is placed between the phase (L) and ground (PE) or between the neutral conductor and ground. As metallized film capacitors, the components are designed to be self-healing, making them particularly fail-safe. Their primary use is as mains filters in household appliances and interference suppression in industrial applications, such as inverters and motor control systems.

Foil Resistor Series for High-Precision, High-Power Applications
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Learn more:
bourns.com
  • Product Release
  • 2025-12-02

Bourns released four Riedon™ Foil Resistor Series. The FPM Series, FPV Series, FWP2324 Series and FPY Series are designed for high-precision, high-power applications. The foil resistors can achieve up to 1 ppm/°C and ±0.005 percent TCR and minimal long-term drift. They are constructed with a metal foil resistive element mounted on a ceramic substrate that provides good heat conductivity. The devices are suited for a variety of current sense, industrial, consumer and telecommunications applications as well as for test and measurement equipment, renewable energy and power conversion systems and industrial automation platforms, where consistent accuracy, stable performance over varying conditions and long-term reliability are essential. While the FWP2324 Series is integrated in a 4-pin rectangular package, the FPY Series uses a 2-pin rectangular package, and the FPM and FPV Series are housed in a 4-pin package with an isolated backplate.

MLCCs in compact 3225M for rated Voltages of 1.25 kV
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Learn more:
murata.com
  • Product Release
  • 2025-12-02

Murata started mass production of its multilayer ceramic capacitor (MLCC) featuring a capacitance of 15 nF, a rated voltage of 1.25 kV, and C0G characteristics in the compact 3225M (3.2 mm x 2.5 mm / 1210-inch) size. This product is suitable for onboard chargers (OBCs) in electric vehicles (EVs) and power supply circuits in high-performance consumer devices. The MLCCs are designed for an operating temperature range from -55 °C to +125 °C, while the capacitance range spans from 4.7 nF to 15 nF, with a tolerance of ±1 % to ±5 %.

MOSFET for 48 V Hot Swap Applications in AI Servers
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Learn more:
aosmd.com
  • Product Release
  • 2025-12-02

Alpha and Omega Semiconductor announced its AOLV66935, a 100 V High Safe Operating Area (SOA) MOSFET in an LFPAK 8x8 package. This MOSFET is designed as a solution for 48 V Hot Swap architectures in AI servers. The AOLV66935 utilizes AOS’ 100 V AlphaSGT™ proprietary MOSFET technology that combines the advantages of trench technology for low on-resistance with high SOA capability. AOS has tested and characterized the SOA at 25 °C as well at higher operating conditions of 125 °C giving system architects the confidence that the device will operate reliably under harsh conditions. The MOSFET’s LFPAK 8x8 gull-wing constructed package is 60 percent smaller compared to the TO-263 (D2PAK) package. The RDS(on) is specified with 1.86 mΩ at VGS = 10 V.

High Voltage IGBT Modules
  • Product Release
  • 2025-12-02

Mitsubishi Electric Corporation launched standard-isolation (6.0 kVrms) and high-isolation (10.2 kVrms) modules in its 4.5 kV/1,200 A XB Series of high-voltage IGBTs. These power semiconductors achieve high moisture resistance for more efficient and reliable inverters used in large industrial equipment, such as railcars, operating in diverse environments including outdoors. These modules (Dimensions 140 x 190 x 38 mm³) use IGBT elements that incorporate Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT1) structure. Specific structures for electric field relaxation and surface charge control enabled Mitsubishi Electric to reduce the chip’s termination region size by about 30 % while also achieving about 20 times greater moisture resistance than existing products. In addition, the module reduces total switching loss by approximately 5 % compared to previous models, and reverse-recovery safe-operating area (RRSOA) tolerance is about 2.5 times greater than that of compared to previous models. By maintaining the same external dimensions as existing products for easy replacement, the module simplifies and shortens the process of designing new inverters.

3300 V and 2300 V Silicon Carbide Devices
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Learn more:
navitassemi.com
  • Product Release
  • 2025-12-01

Navitas Semiconductor announced the sample availability of its 3300 V and 2300 V ultra-high voltage (UHV) products in power module, discrete and known good die (KGD) formats. These SiC products are based on Navitas’ fourth-generation GeneSiC™ platform which uses a TAP architecture to implement a multi-step e-field management profile. SiCPAK™ G+ power module packages are used for both, half-bridge and full-bridge circuit configurations. Key features of the SiCPAK™ G+ power modules also include an AlN DBC substrate for effective heat dissipation and high-current press-fit pins that double the current-carrying capability per pin. Discrete SiC MOSFETs are available in the industry standard TO-247 and TO-263-7 packages. The SiC products are qualified above and beyond the existing AEC-Q101 and JEDEC product qualification standards. Another option is KGD (known good dies), which gives system manufacturers greater flexibility in building custom SiC power modules.

Snubber for SiC Power Module
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Learn more:
melexis.com
  • Product Release
  • 2025-11-27

Melexis announced the MLX91299, a silicon-based RC snubber designed to enhance the performance of silicon carbide power modules. It supports automotive and industrial high-voltage power applications and helps engineers mitigate voltage spikes and oscillations to improve system reliability and efficiency. This RC snubber is a silicon-based protective device integrating both a resistor and a capacitor, providing high-voltage transient protection in a compact form. Designed for seamless assembly within high-voltage power modules, it follows standard integration approaches compatible with SiC devices. Its material and form factor enable direct integration with existing power module layouts. With a breakdown voltage of Melexis announced the MLX91299, a silicon-based RC snubber designed to enhance the performance of silicon carbide power modules. It supports automotive and industrial high-voltage power applications and helps engineers mitigate voltage spikes and oscillations to improve system reliability and efficiency. This RC snubber is a silicon-based protective device integrating both a resistor and a capacitor, providing high-voltage transient protection in a compact form. Designed for seamless assembly within high-voltage power modules, it follows standard integration approaches compatible with SiC devices. Its material and form factor enable direct integration with existing power module layouts. With a breakdown voltage of >1,500 V, it is suitable for traction inverters, onboard chargers, DCDC converters, and other high-voltage automotive and industrial applications. 1,500 V, it is suitable for traction inverters, onboard chargers, DCDC converters, and other high-voltage automotive and industrial applications.

200 V MOSFET switches 480 A
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Learn more:
littelfuse.com
  • Product Release
  • 2025-11-25

Littelfuse released the MMIX1T500N20X4 X4-Class Ultra-Junction Power MOSFET. This 200 V, 480 A N-channel MOSFET features a low on-state resistance of 1.99 mΩ, enabling higher conduction efficiency, simplified thermal management, and improved system reliability in power-dense designs. The device utilizes a ceramic-based, isolated SMPD-X package with topside cooling for improved thermal management, a thermal resistance Rth(j-c) of 0.14 °C/W and 2500 V isolation. Compared with existing state-of-the-art X4-Class MOSFET solutions, the device is said to offer up to 2× higher current ratings and as much as 63 % lower RDS(on), enabling engineers to consolidate multiple paralleled low-current devices into a single high-current solution. The gate charge Qg is specified with 535 nC. Typical applications are DC load switches, battery energy storage systems, industrial and process power supplies, industrial charging infrastructure as well as drones and vertical take-off and landing (VTOL) platforms.

One-Millionth Ideal Switch shipped
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Learn more:
menlomicro.com
  • Industry News
  • 2025-11-20

Menlo Microsystems has announced the shipment of its one-millionth Ideal Switch®. Unlike traditional switching technologies, the Ideal Switch delivers high performance without compromising between size, weight, efficiency, and reliability. This capability allows OEMs to design smaller, lighter, faster, and more energy-efficient systems that can be readily scaled, offering new solutions to tackling the limitations of switching technologies. The key high-growth markets adopting Ideal Switch technology include Test & Measurement (Menlo already supports 14 of the top 20 semiconductor manufacturers), Aerospace & Defense and Power Switching. The adoption of the Ideal Switch across these markets reflects its growing role in addressing system-level bottlenecks caused by the limitations of traditional mechanical and semiconductor-based switches.

Registration is now open for pre-APEC 2026 Workshops
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Learn more:
psma.com
  • Event News
  • 2025-11-20

PSMA has opened registration for both the PSMA Capacitor Workshop and the Power Magnetics @ High Frequency Workshop to be held on Saturday, March 21 in San Antonio, TX prior to the start of APEC 2026. The PSMA Capacitor Workshop returns to APEC after a four year hiatus. The PSMA Capacitor Committee has put together an agenda and is looking to relaunch this workshop series. The PSMA Power Magnetics @ High Frequency Workshop returns for the 11th consecutive year and is looking forward to starting a second decade of delivering valuable information to the community. Both workshops will share a demo/exhibitor area that will also be home for the workshop lunches and networking hour. Space for both workshops is limited. Early bird registration for both workshops runs until January 30th, 2026.

Technology and Foundry Partnership for GaN
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Learn more:
navitassemi.com
  • Industry News
  • 2025-11-20

GlobalFoundries (GF) and Navitas Semiconductor announced a long-term strategic partnership to strengthen and accelerate U.S.-based gallium nitride technology, design and manufacturing. Together, the companies will collaborate, develop and deliver solutions for critical applications in high power markets that demand the highest efficiency and power density, including AI datacenters, performance computing, energy and grid infrastructure and industrial electrification. Through this long-term partnership, GF and Navitas Semiconductor will manufacture next-generation GaN technology at GF’s Burlington, Vermont (USA) facility, leveraging the site’s expertise in high-voltage GaN-on-Silicon technology and Navitas Semiconductor’s GaN technology and device expertise. Development is set for early 2026 with production expected to begin later in the year. By combining GF’s manufacturing capabilities and Navitas’ GaN capabilities, this strategic partnership is expected to "provide customers with the most advanced, secure and scalable GaN solutions".

Gap Filler Gel for Thermal Management
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Learn more:
ph.parker.com
  • Product Release
  • 2025-11-19

The Chomerics Division of Parker Hannifin Corporation introduced THERM-A-GAP™ GEL 120, a one-component, dispensable, thermal interface material with a high thermal conductivity performance. The 12.0 W/m-K thermal conductivity of this product can overcome challenging heat dissipation issues and provide greater design. The special formulation of this gel reduces thermal junction temperatures and conducts heat away from heat-generating electronic components. As a filler material it is suited for use in air gaps of various thicknesses created by assembly and manufacturing tolerances or rough surfaces, from less than 0.5 mm up to 4 mm. Such gaps are common between components or PCBs and heat sinks, metal enclosures and chassis. As a one-component, fully cured material which is suited to operate in temperatures from -50 °C to +200 °C, THERM-A-GAP GEL 120 does not require any secondary curing or additional processes to achieve its specified physical or thermal properties. Its dielectric strength is 5 kVac/mm (ASTM D149 test method), the volume resistivity is 1013 Ωcm (ASTM D257) with a dielectric constant of 5.7 at 1,000 kHz/2 mm thick (ASTM D150); and 0.013 dissipation factor at 1,000 kHz/2 mm thick (Chomerics test method).

Joining Forces for Data Center Power Solutions
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Learn more:
delta-emea.com
  • Industry News
  • 2025-11-19

Delta and Siemens Smart Infrastructure have formalized a global partnership to deliver prefabricated, modular power solutions designed to accelerate the deployment of data center infrastructure, while significantly reducing CAPEX. The partnership is expected to "ensure hyperscale and colocation operators enjoy a strategic advantage in the competitive AI and cloud computing data center market, with the highest performance in power management and reliability". The core of the agreement centers on the delivery of prefabricated, integrated containerized power solutions (SKIDs, eHouses). By prefabricating and pre-testing these modular power systems off-site with an optimized layout, the solution provides a standardized, plug-and-play approach that is said to reduce time-to-market by up to 50 %, to lower construction risk, and to maximize valuable data center square footage. The efficient design can provide up to 20 % CAPEX reduction and up to 27 % lower carbon emissions by using less concrete in the space-optimized layout.

Multi-Purpose R& Dual-Channel Power Supply
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Learn more:
rohde-schwarz.com
  • Product Release
  • 2025-11-18

Delivering precise DC power up to 3.6 kW, the R&S NGT3600 DC power supply series from Rohde & Schwarz (R&S) is a multi-purpose solution for applications across all stages of R&D, quality assurance and production. The dual-channel R&S NGT3622 model, which offers up to 1800 W per channel, is suited for a variety of test and measurement tasks, including power system testing, DC/DC converter evaluation and the simulation of voltage profiles in accordance with test standards. It provides adjustable output voltages of up to 80 V. The two channels of the R&S NGT3622 model can be combined in series or parallel, allowing users to double either the voltage or the current. For applications requiring even more power, up to three units can be connected, delivering up to 480 V or 300 A across six channels. With a resolution of 100 µA for current and 1 mV for voltage, the instruments offer precise measurements needed for a wide range of applications. Thus, it is suited for measurement and testing tasks in various industries, including power electronics, mobile and satellite communications, renewable energies, automotive, aerospace & defense, among others. All models in the R&S NGT3600 DC power supply series are directly rack-mountable – no adapter is required.

1200 V SiC Six-Pack Power Modules for E-Mobility Propulsion Systems
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Learn more:
wolfspeed.com
  • Product Release
  • 2025-11-17

Wolfspeed announced its 1200 V SiC six-pack power modules that "redefine performance benchmarks for high-power inverters". By combining its Gen 4 SiC MOSFET technology and packaging, Wolfspeed’s modules are claimed to "deliver three times more power cycling capability at operating temperature than competing solutions, and 15% higher inverter current capability in an industry-standard footprint". In terms of packaging the new modules incorporate e. g. sintered die attach, epoxy encapsulant material, and copper clip interconnects. The company claims that this enables "3X more power cycles than best-in-class competitor devices in the same footprint". The modules achieve a 22 % RDS(ON) improvement at 125 °C compared to the previous generation, while reducing turn-on energy (EON) by approximately 60 % across operating temperatures. Additionally, the soft-body diode is said to enable 30 % lower switching losses and 50 % lower VDS overshoot during reverse recovery compared to previous generation. The modules’ industry-standard packaging enables seamless adoption without complex redesign, serving as a direct replacement for IGBT solutions in existing system architectures. This means that there will be no need for power terminal laser welding and complex coldplate mounting while maintaining compatibility with traditional power ecosystems including capacitors, cooling solutions, gate drivers, and current sensors.

Test System for Megawatt Charging
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Learn more:
vector.com
  • Product Release
  • 2025-11-12

Vector has introduced the hardware-in-the-loop (HIL) test system vCTS.performance, which was developed in collaboration with EA Elektro-Automatik for testing the charging communication between electric vehicles (EV) and supply equipment (EVSE). It meets the demanding power requirements of the Megawatt Charging System (MCS), while also supporting the major charging standards CCS, MCS, NACS, GB/T and CHAdeMO. The system is now available. The vCTS.performance is a comprehensive HIL test system to ensure conformity and interoperability in charging communication between EVs and EVSEs. With scalable DC charging power of up to 3.84 MW in 60 kW increments, the system supports realistic load and endurance testing under real-world conditions. This ensures that both EVs and EVSEs meet the charging communication standards and function reliably. The system operates energy-efficient by implementing regenerative charging with energy feedback to the grid at an efficiency of over 96 %. It is optimized for running the CANoe Test Package EV and EVSE, including integration into the vTESTstudio workflow.

E-Fuse automotive Smart Switch for Protection, Power Saving and Functional Safety
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Learn more:
st.com
  • Product Release
  • 2025-11-12

An addition to the STi2Fuse family, the VNF1248F automotive e-fuse MOSFET controller from STMicroelectronics reacts within 100 µs, which is faster than a conventional wire fuse and ensures flexible and robust protection to avoid fault propagation inside the vehicle. The VNF1248F integrates the capacitive charging mode (CCM) functionality to ensure proper driving of large capacitive loads with high inrush current. In addition, a Standby-ON mode with current capability up to 600 mA and current consumption lower than 75 µA enhances the vehicle’s efficiency when in park mode. An optional external supply pin for logic reduces power consumption by 0.4 W in 48 V systems and battery-undervoltage shutdown compatible with the automotive LV124 standard ensures system stability. The chip facilitates reaching high safety-integrity levels (ASIL) in ISO 26262 functional-safety applications thanks comprehensive dedicated features like advanced fault detection and reaction, fail-safe mode and limp-home mode. There are also built-in self tests for automatic diagnosis and a dedicated pin for direct hardware control of the external MOSFET gate in case of a microcontroller fault. The VNF1248F is suitable for 12 V, 24 V, and 48 V boardnets. Other uses include as an ECU main switch and active supply for always-on circuitry in parking mode. The associated EV-VNF1248F evaluation board, simplifies integration of the intelligent fuse protection into prototype circuitry. A software package, STSW-EV-VNF1248F, is also available.

1,200 V Automotive-Grade Low-Loss Diodes
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Learn more:
taiwansemi.com
  • Product Release
  • 2025-11-12

Taiwan Semiconductors introduced a series of automotive-grade, low-loss diodes offered in industry-standard packages. The 1,200 V PLA/PLD series, with ratings of 15 A, 30 A or 60 A, all feature maximum forward voltages of 1.3 V, a reverse leakage of less than 10 µA at 25 °C and junction temperatures of up to 175 °C. Available in three popular packages (ThinDPAK, D2PAK-D and TO-247BD), the 1,200V diodes enable easy drop-in replacement to improve efficiency in existing designs. Applications include three-phase AC/DC converters, server and computing power systems, EV charging stations, on-board battery chargers, Vienna rectifiers, totem pole and bridgeless topologies, inverters and UPS systems, and general-purpose rectification in high-power systems of various types.

"Innovation Award" & "Young Engineer Award"
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Learn more:
ecpe.org
  • Industry News
  • 2025-11-11

The Semikron Danfoss Innovation Award and the Semikron Danfoss Young Engineer Award are given for outstanding innovations in projects, prototypes, services or novel concepts in the field of power electronics in Europe, combined with notable societal benefits in form of supporting environmental protection and sustainability by improving energy efficiency and conservation of resources. Both prizes have been initiated by the SEMIKRON Foundation in 2012. The prizes are awarded in cooperation with the European ECPE Network. The deadline for submission ends on 17 January 2026! Please send your proposal resp. your application with the reference ‘Semikron Danfoss Innovation Award’ by email to Thomas Harder, General Manager of ECPE e.V., thomas.harder@ecpe.org. The receipt of your proposal will be confirmed by email in due time.

High Current Four Terminal Shunt Resistors for AI Data Server Power
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Learn more:
seielect.com
  • Product Release
  • 2025-11-11

Stackpole Electronics’ HCSK1216 high current four terminal shunt resistor is engineered "to deliver exceptional accuracy and efficiency in current sensing applications". The HCSK1216’s four-terminal design separates supply current and voltage sensing paths, minimizing power loss and eliminating lead resistance errors. This all-metal component combines high power handling with ultra-low resistance values, making it suitable for precision current measurement. With a footprint that occupies 75 % less space than traditional 2725-size components, the HCSK1216 is targeted for applications where power density and board space are critical. AI data servers are a prime example of environments that benefit from this advanced solution. Available in 0.3, 0.5, 1, and 2 mΩ resistance values, the HCSK1216 offers tolerances as low as 1 % and a temperature coefficient of resistance (TCR) of 50 ppm.

Modular, scalable DC Power System Monitoring and Control
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Learn more:
omnionpower.com
  • Product Release
  • 2025-11-11

OmniOn Power™ is helping to redefine the role of the DC power system controller with its next-generation Pulsar 200 platform. Purpose-built for tomorrow’s connected power infrastructure, the controller unifies modular hardware, edge intelligence, and zero-trust security into a cohesive, patent-pending platform. This combination of features helps operators evolve from basic system control to intelligent and adaptive power management. From small remote sites to large centralized facilities, the Pulsar 200 scales across telecom, data center, and industrial applications, helping to The Pulsar 200 controller provides a modular, building-block-style hardware design: Hot-swappable modules connect directly or via CAN bus, allowing upgrades to be performed with negligible disruption to operations. Zero-trust security according to IEC 62443-4-2 and FIPS 140-3 is already built in – complemented by Secure Boot, hardware-backed encryption, EdgeLock® protection, and role-based access control. Dual Gigabit WAN, Wi-Fi, Bluetooth, and optional 4G/5G enable redundancy and secure site access from most locations. An optional integrated remote monitoring aggregates data from HVAC, generators, automatic transfer switches, meters, sensors, and more than 100 supported devices into one unified interface, reducing hardware clutter, service visits, and troubleshooting time. A 5-inch color touchscreen with guided setup, live schematics, and performance dashboards simplifies deployment and ongoing site management. The Pulsar 200 is available in both new system installations and as a retrofit upgrade kit, enabling customers to modernize installed bases of Infinity-M, Infinity-S, and BPS power systems without replacing existing wiring.

1200 V Gen3 SiC MOSFET Modules in SOT-227
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Learn more:
semiq.com
  • Product Release
  • 2025-11-10

SemiQ has expanded its family of 1200 V Gen3 SiC MOSFETs, launching five SOT-227 modules that offer RDS(on) values of 7.4, 14.5, and 34 mΩ. SemiQ’s GCMS modules, which feature Schottky Barrier Diodes (SBDs), are claimed to have "lower switching losses at high temperature, especially compared to non-SBDs GCMX modules". The devices target medium-voltage, high-power conversion applications, including battery chargers, photovoltaic inverters, server power supplies, and energy storage systems. All parts are screened using wafer-level gate-oxide burn-in tests exceeding 1400 V and are avalanche tested to 800 mJ (330 mJ for 34 mΩ modules). All modules feature an isolated backplate as well as direct mounts for a heat sink. The 7.4 mΩ GCMX007C120S1-E1 reduces switching losses to 4.66 mJ (3.72 mJ Turn on, 0.94 mJ Turn off) and has a body diode reverse recovery charge of 593 nC. Their junction-to-case thermal resistance ranges from 0.23°C/W for the 7.4 mΩ MOSFET module to 0.70 °C/W for the 34 mΩ MOSFET module.

GaN Technology Licensed to Accelerate U.S.-Manufactured Power Portfolio
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Learn more:
gf.com
  • Industry News
  • 2025-11-10

GlobalFoundries (GF) announced that it has entered into a technology licensing agreement with TSMC for 650V and 80V Gallium Nitride (GaN) technology. This strategic move will accelerate GF’s next generation of GaN products for datacenter, industrial and automotive power applications and provide U.S.-based GaN capacity for a global customer base. As traditional silicon CMOS technologies hit their performance limits, GaN is emerging as the next-generation solution for meeting the increasing demand for higher efficiency, power density and compactness in power systems. GF is developing a comprehensive GaN portfolio, including high-performance 650V and 80V technologies aimed at enabling electric vehicles, datacenters, renewable energy systems and fast-charging electronics. GF’s GaN solutions are designed for harsh environments, with a holistic approach to GaN reliability that spans process development, device performance and application integration. GF will qualify the licensed GaN technology at its manufacturing facility in Burlington, Vermont, leveraging the site’s expertise in high-voltage GaN-on-Silicon technology to accelerate volume production for customers seeking next-generation power devices. Development is set for early 2026, with production to begin later in the year.

EPCIA President appointed
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Learn more:
murata.com
  • People
  • 2025-11-07

According to Murata Manufacturing, Christophe Pottier, Vice President of Sales for Murata Europe, has been appointed as President of the European Passive Components Industry Association (EPCIA), effective immediately. Mr. Pottier brings over three decades of deep experience within the electronics industry to his new role, with a strong focus on strategic sales and automotive sector initiatives. His experience at Murata, where he has contributed across multiple domains, including strategic sales in telecom and collaborative initiatives in the automotive industry, has shaped his understanding of how these components quietly power advanced technologies. As EPCIA President, Mr. Pottier’s mission is to promote a stronger, more connected passive components ecosystem across Europe by focusing on three key areas. The first area is elevating the role of passive components as these elements regulate, protect, and optimize electronic signals, making them indispensable to chip performance and system reliability. The second focal point is fostering collaboration which means working with adjacent industries to meet demands for miniaturization, high-speed data, and energy efficiency as integration into semiconductor packaging accelerates. Strengthening ties with research institutes is the third key area: Driving innovation in materials science, sustainability, and advanced manufacturing through partnerships with Europe’s academic and research institutions.

Job Promotion in Solutions for Power Electronics
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Learn more:
indium.com
  • People
  • 2025-11-06

Indium Corporation has promoted Joseph Hertline to Senior Product Manager, Engineered Solder Materials (ESM). In his new role, as Senior Product Manager, Hertline is now responsible for driving the growth of Indium Corporation’s global ESM initiatives through the development of marketing strategies. He will continue to lead the company’s efforts in the power electronics application segment with a broader scope of products, applications, and customer segments. He will also continue to lead ESM Application Engineering efforts for all ESM product lines. Hertline has more than a decade of experience in engineering and product management within the electronics industry and joined Indium Corporation in 2020 as Product Manager, Power Electronics.

MicroModule Series expanded
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Learn more:
we-online.com
  • Product Release
  • 2025-11-06

The MagI³C-VDMM power module product family from Würth Elektronik continues to grow: The three variable step-down MicroModules for input voltages from 2.5 V to 5.5 V and adjustable output voltages from 0.6 V to 4 V are available in pin-compatible 1 A, 2 A, and 3 A versions. The modules achieve a peak efficiency of up to 96 %. With a quiescent current of 4 µA,they are also suitable for battery-powered applications. MagI³C-VDMM power modules represent a fully integrated DC/DC power supply that includes a switching regulator with integrated MOSFETs, as well as a controller, compensation, and a shielded inductor – all in a single package. The modules, which can replace linear regulators, are equipped with integrated protection circuits. They protect against thermal overload and electrical damage caused by overcurrent, short circuit and undervoltage. Depending on the load, they automatically switch between pulse frequency modulation (PFM) and pulse width modulation (PWM) modes. These mode transitions allows optimal efficiency and output voltage ripple at all load currents. To save energy, the power module can be set to resting mode using an additional pin. Together, the Power-GOOD and EN functions also enable power sequencing. These MagI³C-VDMM power modules measure 3.5 x 3.5 x 1.5 mm³ in an LGA-9 package. The devices are suitable for point-of-load DC/DC applications, industrial and medical equipment, test and measurement devices, for powering DSPs, FPGAs, MCUs and MPUs as well as I/O interfaces. In the operating temperature range from -40 °C to 105 °C the modules comply with EN55032 (CISPR-32) Class B for radiated emissions.


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GaN Insights eBookThe power electronics industry is undergoing a sig...13724Industry NewsGaN Insights eBookThe power electronics industry is undergoing a significant transformation, driven by the growing adoption of Gallium Nitride (GaN) power solutions. Infineon Technologies has published the 2026 edition of its annual GaN Insights, providing awareness into the world of GaN technology, its applications, and future prospects. According to analysts from Yole, the GaN power semiconductor market is expected to reach almost $3 billion by 2030, marking a 400 % increase compared to the 2025 market. This rapid growth is driven by significant production ramps, which began in 2025, broadening GaN adoption across multiple industries and enabling its penetration into new applications. In fact, the market is expected to grow at a compound annual growth rate (CAGR) of 44 % from 2025 to 2030 (Source: Trend Force), with revenue projections of $920 million in 2026, representing a 58 % growth over 2025 (Source: Yole). In 2026, designers are expected to uncover new uses of GaN bidirectional switches (BDS) beyond solar inverters and EV on-board chargers. Infineon’s high-voltage bidirectional GaN switches feature a common drain design with a double gate structure, leveraging proven Gate Injection Transistor (GIT) technology. This architecture enables the use of the same drift region to block voltages in both directions, resulting in a significantly reduced die size compared to conventional back-to-back arrangements. For instance, utilizing Infineon’s CoolGaN&trade; BDS, which operates up to 1 MHz, solar microinverters deliver 40 % more power in the same-sized inverter while reducing system costs. The GaN Insights eBook is available on Infineon’s website.10.02.2026 09:00:00Febnews_2026-02-15_4.jpg\images\news_2026-02-15_4.jpghttps://www.infineon.com/market-news/2026/infpss202602-047infineon.com
Strategic GaN Technology Licensing and Second Sourcing AgreementEfficient Power Conversion (EPC) announced a compr...13721Industry NewsStrategic GaN Technology Licensing and Second Sourcing AgreementEfficient Power Conversion (EPC) announced a comprehensive licensing agreement with Renesas Electronics Corporation. Under the agreement, Renesas will gain access to EPC’s proven low-voltage eGaN&reg; technology and its established supply-chain ecosystem, accelerating the adoption of high-performance GaN solutions across a broad range of markets. EPC and Renesas will collaborate over the next year to establish internal wafer fabrication capabilities for these products. In addition, Renesas will second-source several of EPC’s GaN devices that are already in mass production, enhancing supply-chain resilience for customers. This alliance expands customer access to GaN technology while providing increased supply assurance through qualified second sourcing. "Together, EPC and Renesas are forming a global alliance to deliver state-of-the-art power efficiency - cutting costs in AI data centers and enhancing autonomous systems. This is an exciting moment for our industry and our company," said Alex Lidow, CEO of EPC.10.02.2026 06:00:00Febnews_2026-02-15_1.jpg\images\news_2026-02-15_1.jpghttps://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3257/epc-announces-strategic-gan-technology-licensing-and-second-sourcing-agreement-with-renesasepc-co.com
10 kW DC/DC Platform delivering 98.5 % EfficiencyNavitas Semiconductor has introduced a 10 kW DC/DC...13736Product Release10 kW DC/DC Platform delivering 98.5 % EfficiencyNavitas Semiconductor has introduced a 10 kW DC/DC power platform delivering up to 98.5 % peak efficiency and 1 MHz switching frequency to support next-generation AI data centers. The all-GaN 10 kW 800 V–to–50 V DC/DC platform employs 650 V and 100 V GaNFast&trade; FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5 % peak efficiency and 98.1% full load efficiency in a full-brick (61 mm &times; 116 mm &times; 11 mm) package, achieving 2.1 kW/in&sup3; power density. The resulting production-oriented platform supports 800 V–to–50 V and +/- 400 V–to–50 V architectures at 10 kW, integrating auxiliary power and control to simplify adoption and enable high–power-density module designs for next-generation HVDC AI data centers.09.02.2026 15:30:00Febnews_2026-02-15_16.jpg\images\news_2026-02-15_16.jpghttps://navitassemi.com/navitas-unveils-breakthrough-10-kw-dc-dc-platform-delivering-98-5-efficiency-for-800-vdc-next-gen-ai-data-centers/navitassemi.com
Partner Program launchedWürth Elektronik has launched its partner program ...13726Industry NewsPartner Program launchedWürth Elektronik has launched its partner program to create a dynamic, high-growth innovation ecosystem in the electronics industry. The program was officially presented at a kick-off event at the end of September, where Texas Instruments was presented as the first Premium Partner. The semiconductor manufacturer Nexperia has also signed up as a Silver Partner. The Würth Elektronik partner program is divided into three tiers. Entry is possible with just a non-disclosure agreement, a brand license, and a business model. Based on clearly defined criteria – such as brand commitment, shared growth objectives, and the integration of Würth Elektronik components into their own designs – participating companies can then progressively advance from Entry Level through Silver to Premium Partner status. The program is based on four pillars: technical support, products and tools, marketing support, and knowledge transfer and training. This creates a network that brings together technology leaders, business units, and stakeholders. Partners can unlock new market potential, accelerate product innovation, and offer their customers a seamless one-stop-shop concept.05.02.2026 11:00:00Febnews_2026-02-15_6.jpg\images\news_2026-02-15_6.jpghttps://www.we-online.com/en/news-center/press?instance_ID=5506&d=partnerprogramwe-online.com
Service for Current Sense TransformersWürth Elektronik expands its free design tool REDE...13731Product ReleaseService for Current Sense TransformersWürth Elektronik expands its free design tool REDEXPERT to include the Current Sense Transformer Selector. It enables developers to select the appropriate current sense transformers based on parameters relevant to their application. Current sense transformers for measuring alternating current offer unique advantages over other current sensing solutions: galvanic isolation, low power loss, high immunity to signal noise, and simple circuit design. Selecting the right current sensor can be a challenge depending on the application. The Current Sense Transformer Selector from Würth Elektronik offers a unique design tool previously not available on the market in this form. After entering the parameters – current, frequency, signal type, and desired maximum error rate – the Selector finds all available options in Würth Elektronik’s product database that match these criteria. The tool provides a list of components with the corresponding parameters and simulates both the temperature rise and the error as a function of frequency and current. The tool also allows the direct comparison of different options in a simulation view and provides an overview page with all relevant information for the selected component. These simulations, based on actual measurements, save developers from having to conduct their own tests when selecting current sense transformers (CSTs). Typical applications of current sense transformers include AC current measurement, switched-mode power supplies, overload detection, load shedding/shutdown detection, metering, load measurement, and high-frequency current sensing.05.02.2026 10:30:00Febnews_2026-02-15_11.jpg\images\news_2026-02-15_11.jpghttps://www.we-online.com/en/news-center/press?instance_ID=5506&d=redexpert-current-sensewe-online.com
Isolated Gate Driver ICs for SiC ApplicationsInfineon Technologies introduces the EiceDRIVER&tr...13729Product ReleaseIsolated Gate Driver ICs for SiC ApplicationsInfineon Technologies introduces the EiceDRIVER&trade; 1ED301xMC12I product family, a series of high-performance isolated gate driver ICs with opto. This enables engineers to migrate to SiC technology without redesigning opto-based control schemes. The family is suitable for demanding applications where fast, reliable, and SiC-capable gate drivers are required, such as motor drives, solar inverters, electric-vehicle chargers, and energy-storage systems. The 1ED301xMC12I product family includes three variants designed to support Si MOSFETs, IGBTs, and SiC MOSFETs: 1ED3010, 1ED3011, and 1ED3012. All devices deliver up to 6.5 A of output current. The gate drivers come in a CTI 600 6-pin DSO package offering more than 8 mm creepage and clearance. Their insulation is certified according to UL 1577 and is pending certification according to IEC 60747-17. The opto-emulator input uses two pins. With a CMTI exceeding 300 kV/&micro;s, a propagation delay of 40 ns, and timing matching below 10 ns, the devices enable precise and robust switching behavior. Moreover, a pure PMOS sourcing stage further improves turn-on performance.05.02.2026 08:30:00Febnews_2026-02-15_9.jpg\images\news_2026-02-15_9.jpghttps://www.infineon.com/market-news/2026/infpss202602-045infineon.com
1200V SiC MPS DiodesRIR Power Electronics has introduced a family of 1...13727Product Release1200V SiC MPS DiodesRIR Power Electronics has introduced a family of 1200 V Silicon Carbide Merged-PiN Schottky (MPS) diodes designed for high-efficiency and high-reliability power systems. The devices are available in current ratings from 10 A to 40 A in industry-standard TO-247-2L packages. By monolithically integrating Schottky and PiN structures, RIR’s SiC MPS diodes deliver near-zero reverse recovery with enhanced surge current capability, low leakage at elevated temperatures, and improved avalanche and blocking robustness compared to conventional Schottky diodes. The diodes target demanding applications such as EV charging, data centers and AI infrastructure, renewable energy and grid-tied systems, industrial drives, aerospace and defense, and green hydrogen and electrolysis systems.05.02.2026 06:30:00Febnews_2026-02-15_7.png\images\news_2026-02-15_7.pnghttps://www.rirpowersemi.com/news/rir-launches-sic-mps-diodes-for-ev-and-power-systemsrirpowersemi.com
Technology Guide to enhance Power Stability in AI-driven Data CentresMurata Manufacturing has launched a technology gui...13725Industry NewsTechnology Guide to enhance Power Stability in AI-driven Data CentresMurata Manufacturing has launched a technology guide entitled: ‘Optimising Power Delivery Networks for AI Servers in Next-Generation Data Centres.’ Available on the company’s website, the guide introduces specific power delivery network optimisation solutions for AI servers that enhance power stability and reduce power losses across the data center infrastructure. The guide addresses the rapid advancement and adoption of AI, a trend driving the continuous rollout of new data centers worldwide. As the industry moves toward higher voltage operations and increased equipment density, the resulting increase in overall power consumption has made stable power delivery a critical business issue for data centre operators. Consequently, the guide focuses on power circuit design for data centers, providing a detailed overview of market trends, evolving technologies in power delivery, and the key challenges the sector currently faces. To assist engineers and designers, the guide is structured to provide a market overview that breaks down power consumption and technology trends within power lines. It further addresses market challenges and solutions by examining key considerations in power-line design and exploring how the evolution of power placement architectures can facilitate power stabilisation and loss reduction. Murata supports these architectural improvements with products, including multilayer ceramic capacitors (MLCC), silicon capacitors, polymer aluminium electrolytic capacitors, inductors, chip ferrite beads, and thermistors. Furthermore, the company provides design-stage support.04.02.2026 10:00:00Febnews_2026-02-15_5.png\images\news_2026-02-15_5.pnghttps://www.murata.com/en-eu/news/other/other/2026/0204murata.com
Texas Instruments to acquire Silicon LabsTexas Instruments and Silicon Labs have signed a d...13723Industry NewsTexas Instruments to acquire Silicon LabsTexas Instruments and Silicon Labs have signed a definitive agreement under which Texas Instruments will acquire Silicon Labs for $ 231.00 per share in an all-cash transaction, representing a total enterprise value of approximately $ 7.5 billion. The acquisition aims to create a provider of embedded wireless connectivity solutions by combining Silicon Labs’ strong portfolio and expertise in mixed signal solutions with Texas Instruments’ analog and embedded processing portfolio and internally owned technology and manufacturing capabilities. The combined company is expected to accelerate growth by better serving existing and new customers through enhanced innovation and market access.04.02.2026 08:00:00Febnews_2026-02-15_3.jpg\images\news_2026-02-15_3.jpghttps://www.ti.com/about-ti/newsroom/news-releases/2026/2026-02-04-texas-instruments-to-acquire-silicon-labs.html?HQS=corp-dbwti-ep-tisi-bhp-news-null-wweti.com
Power Module enhances AI Data Center Power Density and EfficiencyMicrochip Technology launched the MCPF1525 Power M...13730Product ReleasePower Module enhances AI Data Center Power Density and EfficiencyMicrochip Technology launched the MCPF1525 Power Module, a highly integrated device with a 16V Vin buck converter that can deliver 25 A per module, stackable up to 200 A. This device is designed to power the latest generation of PCIe switches and high-performance compute MPU applications needed for AI deployments. The MCPF1525 is packaged in a vertical construction that maximizes board space efficiency and can offer up to a 40 % board area reduction when compared to other solutions. The compact power module is approximately 6.8 mm &times; 7.65 mm &times; 3.82 mm, making it usable for space-constrained AI servers. For increased reliability, the MCPF1525 includes multiple diagnostic functions reported over PMBus&trade;, including over-temperature, over-current and over-voltage protection to minimize undetected faults. With a thermally enhanced package, the device is engineered to work within an operating junction temperature range of -40°C to +125°C. An on-board embedded EEPROM allows users to program the default power-up configuration. The MCPF1525 features a customized integrated inductor for low conducted and radiated noise, enhancing signal integrity, data accuracy and reliability of high-speed computing, helping reduce repeated data transmissions that waste valuable system power and time.03.02.2026 09:30:00Febnews_2026-02-15_10.jpg\images\news_2026-02-15_10.jpghttps://www.microchip.com/en-us/about/news-releases/products/new-power-module-enhances-ai-data-center-power-density-efficiencymicrochip.com
GaN Power Transistor: Seventh-Generation in Mass ProductionEfficient Power Conversion (EPC) has started volum...13734Product ReleaseGaN Power Transistor: Seventh-Generation in Mass ProductionEfficient Power Conversion (EPC) has started volume production of the EPC2366, the first of its seventh-generation (Gen 7) eGaN&reg; family of power transistors. EPC2366 delivers up to 3&times; better performance than equivalent silicon MOSFETs. With a typical RDS(on) of 0.84 m&#8486; and an optimized R<sub>DS(on)</sub> &times; Q<sub>G</sub> figure of merit (FoM) &lt; 12 m&#8486; *nC, it simultaneously cuts conduction and switching losses while improving thermal performance. Engineered for high-efficiency, high-density power systems, the device excels in synchronous rectification, high-density DC/DC conversion, AI server power supplies, and advanced motor drives. It supports drain-to-source voltages up to 40 V and transient voltages up to 48 V, with continuous drain currents up to 88 A and pulsed currents of 360 A, making it well suited for the most demanding power systems. The device is integrated in a 3.3 mm &times; 2.6 mm PQFN package with a thermal resistance from the junction to the case of 0.6 °C/W. To accelerate design-in and evaluation, EPC also offers the EPC90167 half-bridge evaluation board, which integrates two EPC2366 transistors in a low-parasitic layout with support for standard PWM drive signals and flexible input modes, providing engineers a reference platform to assess performance in real-world applications.02.02.2026 13:30:00Febnews_2026-02-15_14.jpg\images\news_2026-02-15_14.jpghttps://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3254/epc-launches-its-first-seventh-generation%e2%80%afgen-7-egan-power-transistor-the-40%e2%80%afv-epc2366-into-mass-productionepc-co.com
High-Current, Low-Noise Shielded Power Inductor for Compact Power SystemsSumida has launched the molded power inductors of ...13732Product ReleaseHigh-Current, Low-Noise Shielded Power Inductor for Compact Power SystemsSumida has launched the molded power inductors of the 0615CDMCC/DS series, a low-profile magnetic component engineered to support increasingly power-dense electronics, including compact computing devices, servers, and advanced DC/DC converter architectures. The 0615CDMCC/DS series leverages metal compound molding construction - a key advancement over traditional ferrite inductor designs. By embedding the winding in a solid composite core, Sumida has eliminated internal air gaps and improved magnetic flux containment. This results in higher current capability and enhanced thermal performance, allowing the inductor to maintain stable inductance even as load current rises. Because the molding process naturally produces a shielded magnetic structure, the 0615CDMCC/DS series significantly reduces electromagnetic interference (EMI) and minimizes magnetic flux leakage into nearby circuitry without bulk. Engineers designing around noise-critical applications such as high-speed digital boards, RF-sensitive devices, and distributed power rails, gain flexibility in component placement without compromising signal integrity. The inductor is ultra-thin with a footprint of 7.3 mm &times; 6.8 mm &times; 1.5 mm max.), giving engineers a practical solution for mechanical envelopes that leave little headroom for vertically oriented components. With operation and storage temperature support from -55 °C to +125 °C, the 0615CDMCC/DS series is prepared for demanding thermal conditions across computing, industrial, and battery-powered platforms. Inductance values from 0.12 &micro;H to 1.50 &micro;H are currently available.28.01.2026 11:30:00Jannews_2026-02-15_12.jpg\images\news_2026-02-15_12.jpghttps://products.sumida.com/ProductsInfo/ProductGuide/PowerInductors/TypeDetail.php?type=0615CDMCC%2FDSsumida.com
High Voltage DiodesDean Technology added two series to their medium p...13728Product ReleaseHigh Voltage DiodesDean Technology added two series to their medium power high voltage diode line: the FH Series and SH Series of diodes. The FH series and SH series were conceptualized and designed based on specific needs from customers. Using the technology of the legacy 2CL series diode line, these series offer higher current and significantly faster reverse recovery time, making them suited for applications with critical performance requirements such as X-ray equipment (medical, dental, industrial, and security), induction heating, and high voltage power supplies. SH series models are standard recovery, but the FH series offers a reverse recovery time (TRR) of 40 ns maximum, significantly faster than its 2CL predecessor (100 ns). The SH series units offer a maximum repetitive reverse voltage range (VRRM) from 8 to 15 kV at 200 to 350 mA of average forward current (IFAVM). The FH series offers a VRRM range of 2 to 30 kV at an IFAVM range of 100 to 700 mA.28.01.2026 07:30:00Jannews_2026-02-15_8.png\images\news_2026-02-15_8.pnghttps://www.deantechnology.com/two-new-series-of-enhanced-and-higher-voltage-diodes/deantechnology.com
GaN Technology Licensing AgreementVanguard International Semiconductor Corporation (...13722Industry NewsGaN Technology Licensing AgreementVanguard International Semiconductor Corporation (VIS) has signed a technology licensing agreement with Taiwan Semiconductor Manufacturing Company (TSMC) for high-voltage (650 V) and low-voltage (80 V) Gallium Nitride technologies. This agreement will help VIS accelerate the development and expansion of next-generation GaN power technologies for applications such as data centers, automotive electronics, industrial control, and energy management. Through this licensing agreement, VIS will expand its GaN-on-Si technology into high-voltage applications and offer a GaN-on-Si platform for power applications. Combined with its existing GaN-on-QST technology platform, VIS claims to "become the only foundry in the world capable of offering power GaN technologies on both silicon and QST substrates". VIS will support complete product solutions covering low voltage (&lt;200 V), high voltage (650 V) and ultra-high voltage (1200 V). The technology will be validated on VIS’ mature 8-inch manufacturing line to ensure process stability and high yield. Development activities are expected to commence in early 2026, with production scheduled for the first half of 2028.28.01.2026 07:00:00Jannews_2026-02-15_2.jpg\images\news_2026-02-15_2.jpghttps://www.vis.com.tw/en/press_detail?itemid=21379vis.com.tw
600 V Super Junction MOSFET PlatformAlpha and Omega Semiconductor unveiled its &alpha;...13735Product Release600 V Super Junction MOSFET PlatformAlpha and Omega Semiconductor unveiled its &alpha;MOS E2&trade; 600 V Super Junction MOSFET platform. The first high-voltage product from the platform is AOS’ AOTL037V60DE2. The MOSFET is designed to meet the growing demand for high efficiency and high-power density across a wide range of applications, including servers, workstations, telecom rectifiers, solar inverters, motor drives, and industrial power systems. AOS engineered its &alpha;MOS E2 High-Voltage Super Junction MOSFET platform with an intrinsic body diode to reliably handle hard commutation scenarios, such as reverse recovery of the freewheeling body diode that can occur during abnormal events, such as short-circuits or start-up transients. The AOTL037V60DE2, available in a TOLL package, features a maximum R<sub>DS(on)</sub> of 37 m&#8486;. In evaluations conducted by AOS’ application engineering team, the body diode ruggedness of this MOSFET demonstrated the ability to withstand di/dt = 1300 A/&micro;s under specific forward current conditions at a junction temperature of 150°C. Moreover, AOS testing confirmed that the AOTL037V60DE2 delivered superior Avalanche Unclamped Inductive Switching (UIS) capability and a longer Short-Circuit Withstanding Time (SCWT) when compared to competing MOSFETs. This enhanced ruggedness translates into greater system-level reliability, ensuring robust performance even under abnormal operating scenarios.27.01.2026 14:30:00Jannews_2026-02-15_15.jpg\images\news_2026-02-15_15.jpghttps://www.aosmd.com/news/alpha-and-omega-semiconductor-unveils-its-powerful-amos-e2-600v-super-junction-mosfet-platformaosmd.com
LDO Regulators with 500 mA Output CurrentROHM has developed the "BD9xxN5 Series" of LDO reg...13733Product ReleaseLDO Regulators with 500 mA Output CurrentROHM has developed the "BD9xxN5 Series" of LDO regulator ICs with 500 mA output current, featuring its proprietary ultra-stable control technology "Nano Cap&trade; ". This series comprises 18 products designed for 12V/24V primary power supply applications used in automotive equipment, industrial equipment, and communication infrastructure. ROHM developed the "BD9xxN1 Series" LDO regulator (150 mA output current) in 2022, incorporating its proprietary control technology, Nano Cap , which enables stable operation with output capacitors as small as 100 nF. The BD9xxN5 Series builds on the BD9xxN1 Series by increasing the output current to 500 mA – more than three times higher than before – significantly broadening its suitability for applications requiring higher power. In addition, very low output voltage ripple of approximately 250 mV (with load current variation of 1 mA to 500 mA within 1 µs) is achieved with a small output capacitance of 470 nF (typical). Beyond standard small MLCCs (multi-layer ceramic capacitors) in the range of several &micro;F and large-capacity electrolytic capacitors, it also supports ultra-small MLCCs, such as the 0603M size (0.6 mm &times; 0.3 mm), with capacities below 1 &micro;F. This contributes to space saving as well as greater flexibility in component selection.27.01.2026 12:30:00Jannews_2026-02-15_13.jpg\images\news_2026-02-15_13.jpghttps://www.rohm.com/news-detail?news-title=2026-01-27_news_ldo&defaultGroupId=falserohm.com
IGBT Series for Solar and Energy Storage SystemsMagnachip Semiconductor launched a series of IGBTs...13698Product ReleaseIGBT Series for Solar and Energy Storage SystemsMagnachip Semiconductor launched a series of IGBTs designed for solar inverters and industrial Energy Storage Systems (ESS). These 650 V and 1200 V generation discrete IGBT products provide improved Reverse Bias Safe Operating Area for stable and reliable performance under harsh high-voltage and high-current conditions. The products are available in both standard TO-247 and high-capacity TO-247 Plus packages. Specifically, the cell pitch has been reduced by approximately 40 %, increasing current capacity within the same die area. Magnachip plans to further expand its product lineup in the first half of 2026 by introducing a high-current series rated up to 650 V / 150 A, as well as new 750 V products. The company also plans to add the ‘TO-247-4Lead’ package, featuring a Kelvin pin for improved switching efficiency.22.01.2026 11:30:00Jannews_2026-02-01_14.png\images\news_2026-02-01_14.pnghttps://www.magnachip.com/magnachip-targets-solar-and-energy-storage-systems-markets-with-new-generation-of-high-efficiency-igbt-series/magnachip.com
Sintered Metal Shunt ResistorsROHM has developed the UCR10C Series, which is cla...13694Product ReleaseSintered Metal Shunt ResistorsROHM has developed the UCR10C Series, which is claimed to deliver "the industry’s highest rated power for 2012-size shunt resistors (10 m&#8486; to 100 m&#8486;)". The devices form a copper-based resistive element on an alumina substrate via sintering, achieving rated powers of 1.0 W and 1.25 W. This enables the replacement of products with wide terminal types or larger alternatives, facilitating miniaturization and reducing the number of components required. Furthermore, the use of a metal resistive element achieves a low TCR (0 to +60 ppm/°C). This minimizes errors due to temperature changes, enabling high-precision current sensing. Moreover, it achieves the same level of durability as the metal plate types in temperature cycle testing (-55 °C / +155 °C, 1000 cycles).22.01.2026 07:30:00Jannews_2026-02-01_10.jpg\images\news_2026-02-01_10.jpghttps://www.rohm.com/news-detail?news-title=2026-01-22_news_resistor&defaultGroupId=falserohm.com
1200 V / 300 A IGBT Module in CPAK-EDC PackageCISSOID has expanded its standard product offering...13693Product Release1200 V / 300 A IGBT Module in CPAK-EDC PackageCISSOID has expanded its standard product offerings with the CMT-PLA1BL12300MA. This 1200 V / 300 A Half-Bridge IGBT Power Module is now available in the industry-standard CPAK-EDC package, delivering enhanced mechanical robustness and drop-in compatibility. The CMT-PLA1BL12300MA is designed for high frequency switching and high-performance industrial applications, such as UPS systems, motor and motion control solutions, and power supplies. Utilising Trench Gate Field Stop (TG-FS) IGBT technology, the module delivers a balance between switching speed and conduction losses. Integrated diode technology provides fast and soft reverse recovery, simplifying system design while improving the EMC performance. The device is rated for 450 A continuous DC current (@ T<sub>j</sub> = 90 °C), operates with a saturation voltage V<sub>ce_sat</sub> = 1.56 V (@ I<sub>c</sub> = 300 A, T<sub>j</sub> = 25 °C) / V<sub>ce_sat</sub> = 1.78 V (@ I<sub>c</sub> = 300 A, T<sub>j</sub> = 150 °C) and offers the following thermal resistance: R<sub>th_jc</sub> = 0.065 °C/W (IGBT) / 0.1 °C/W (diode).22.01.2026 06:30:00Jannews_2026-02-01_9.jpg\images\news_2026-02-01_9.jpghttps://www.cissoid.com/news/cissoid-expands-standard-portfolio-with-efficient-1200v-300a-igbt-module-in-robust-cpak-edc-package-38cissoid.com
600 V Gate Driver FamilyMicrochip introduced its 600 V Gate Driver portfol...13699Product Release600 V Gate Driver FamilyMicrochip introduced its 600 V Gate Driver portfolio, featuring 12 devices available in half-bridge, high-side/low-side and 3-phase driver configurations, which are designed for motor control and power conversion systems for industrial and consumer applications. The 600 V gate drivers provide current drive options from 600 mA to 4.5 A. They support 3.3V logic for seamless integration with microcontrollers. They are designed with Schmitt-triggered inputs and internal deadtime to protect MOSFETs.21.01.2026 12:30:00Jannews_2026-02-01_15.jpg\images\news_2026-02-01_15.jpghttps://www.microchip.com/en-us/about/news-releases/products/microchip-introduces-600v-gate-driver-family-for-high-voltagemicrochip.com
Senior Vice President for Power SolutionsOmniOn Power&trade; (OmniOn) has appointed Philip ...13686PeopleSenior Vice President for Power SolutionsOmniOn Power&trade; (OmniOn) has appointed Philip Zuk as Senior Vice President and General Manager of its AI and Data Center business. He has more than 25 years of experience in the global power electronics and semiconductor industries. In this role, Zuk will lead the company’s recently established AI and Data Center business unit, focused on addressing the power challenges faced by today’s AI-driven data centers while anticipating the industry’s future power requirements. Prior to joining OmniOn, Zuk used to work for Transphorm, Microsemi and Vishay Siliconix.21.01.2026 07:00:00Jannews_2026-02-01_2.jpg\images\news_2026-02-01_2.jpghttps://www.omnionpower.com/about/news/press-releases/omnion-power-appoints-philip-zuk-new-svp-of-ai-and-data-center-businessomnionpower.com
Family of Dual-Channel Digital Isolators for High-Voltage SystemsDiodes Incorporated announced the API772x RobustIS...13700Product ReleaseFamily of Dual-Channel Digital Isolators for High-Voltage SystemsDiodes Incorporated announced the API772x RobustISO&trade; products, a series of dual-channel digital isolators, which are specifically designed to provide a reliable and robust isolation solution for digital signals in critical applications - addressing rising demands in areas such as industrial automation, new energy power systems, and data center power supplies. The API772x digital isolators are engineered to meet reinforced and basic isolation requirements across various standards, including VDE, UL, and CQC. They offer a 5,000 V<sub>RMS</sub> isolation rating for one minute, per UL 1577, and feature an 8,000 V<sub>Peak</sub> isolation rating, per DIN EN IEC 60747-17 (VDE 0884-17), with a maximum surge isolation voltage of 12,800 V<sub>Peak</sub>. This level of isolation represents a significant differentiation with a higher breakdown voltage exceeding 12 kV. The capacitive isolation barrier employed in these devices, which has a thickness greater than 25 &micro;m, is predicted to have an operational lifetime of over 40 years. These RobustISO digital isolators support data rates of up to 100 Mbit/s and shows a minimum common-mode transient immunity (CMTI) of 150 kV/&micro;s. The API772x series operates over a supply voltage range of 2.5 V to 5.5 V and features low-power consumption, typically drawing 2.1 mA per channel at 1Mbps. They also offer a low propagation delay of 11ns (typ.), ensuring timely signal transferring. The API772x devices are supplied in the SO-8W (Type CJ) package.20.01.2026 13:30:00Jannews_2026-02-01_16.jpg\images\news_2026-02-01_16.jpghttps://www.diodes.com/about/news/press-releases/robustiso-family-of-dual-channel-digital-isolators-from-diodes-incorporated-enhances-safety-and-reliability-in-high-voltage-systemsdiodes.com
Concurrent forums of productronica China 2026: Focusing on Four Trends and Guiding the Development Direction of Intelligent ManufacturingFrom March 25 to 27, 2026, productronica China 202...13685Event NewsConcurrent forums of productronica China 2026: Focusing on Four Trends and Guiding the Development Direction of Intelligent ManufacturingFrom March 25 to 27, 2026, productronica China 2026 will be held grandly at Halls E1-E5 and W1-W4 of the Shanghai New International Expo Centre (SNIEC). As an important display and exchange platform for the electronic manufacturing industry, this edition will feature over 1,000 exhibitors across its exhibition area of nearly 100,000 square meters. It will focus on the needs of multiple fields, including component manufacturing, test and measurement, quality assurance, new energy vehicle inspection technology, surface mount technology (SMT), electronics manufacturing services (EMS), automated electronic assembly, clean technology, cable processing, electronic chemical materials, dispensing and bonding technology, robotics, AGV, intelligent warehousing, sensor technology, motion control and drive technology,new energy vehicle technology as well as automotive PLC Industrial control system. It aims to present an "innovation feast" covering the entire industrial chain of electronic production to the industry, highlighting smart factories, new energy vehicle technology, and the digital future.19.01.2026 06:00:00Jannews_2026-02-01_1.jpg\images\news_2026-02-01_1.jpghttps://dwz.cn/dm1kDXWYproductronicachina.com
R&D Centre and SMT Prototyping Line in Xiamen/China openedRecom Power has opened a Research & Development Ce...13691Industry NewsR&D Centre and SMT Prototyping Line in Xiamen/China openedRecom Power has opened a Research & Development Centre and SMT Prototyping Line in Xiamen/China. This facility integrates R&D, Engineering, and Quality departments under one roof, to enable seamless collaboration across all stages of product development. This close interaction enables faster design iterations, improved Design for Manufacturability (DFM), accelerated trial runs and verification testing, as well as mass production part approval. Equipped with a dedicated SMT prototyping line, the Xiamen Centre allows for rapid sample and initial stock production. The RECOM Xiamen R&D Centre will serve as a vital hub for next-generation power conversion technologies, supporting both global and regional development initiatives. It complements RECOM’s existing design and production facilities across Europe, the USA, and Asia, ensuring consistent product quality and innovation worldwide.16.01.2026 12:00:00Jannews_2026-02-01_7.jpg\images\news_2026-02-01_7.jpghttps://recom-power.com/en/knowledgebase/newsroom/rec-n-recom-opens-new-r&d-centre-and-smt-prototyping-line-in-xiamen,-china-449.html?5recom-power.com
DC link Capacitor operate at up to +105 °C without DeratingTDK Corporation announced the ModCap UHP (B25648A)...13702Product ReleaseDC link Capacitor operate at up to +105 °C without DeratingTDK Corporation announced the ModCap UHP (B25648A) series of DC link capacitors. ’UHP’ stands for ’Ultra-High Performance’, and this series enables continuous operation at hotspot temperatures of up to +105 °C without power derating. Compared to previous ModCap generations, which required derating starting at +90 °C, the new design enables higher current density and a longer lifetime of 200,000 hours at +105 °C in challenging conditions, while supporting a 20 % higher current density. With a DC voltage rating of 1350 V to 1800 V and a capacitance ranging from 470 &micro;F to 880 &micro;F, the series is optimized for SiC semiconductor-based inverters that require low inductance (ESL of 8 nH) and high-frequency performance. These capacitors target fast-growing sectors, including renewable energy (solar and wind power, electrolyzer), energy storage, and inverters for railway and industrial drives. Their cubic design (205 &times; 90 &times; 170 mm&sup3;; L x W x H) simplifies busbar integration, thereby increasing power density in compact converters and reducing the need for additional snubber capacitors.15.01.2026 15:30:00Jannews_2026-02-01_18.jpg\images\news_2026-02-01_18.jpghttps://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/tdk-introduces-modcap-uhp-for-high-current-dc-link-applications-with-105-c-operation-without-derating/3660368tdk-electronics.tdk.com
Power Electronics International 2026 EventPower Electronics International Conference 2026 re...13690Event NewsPower Electronics International 2026 EventPower Electronics International Conference 2026 returns to Brussels April 20 to 22, for its 4th edition as part of the Angel Tech conference series, bringing together the global power electronics community for two days of insight, discussion and collaboration. From automotive electrification and renewable energy to AI driven data centres and wide bandgap innovation, the agenda is built around the technologies shaping the future of power electronics. Co located with CS International, PIC International and Advanced Packaging International, the event will welcome 800 plus senior level attendees and 80 plus exhibitors, with four expert led conference programmes, a shared exhibition and dedicated networking receptions.15.01.2026 11:00:00Jannews_2026-02-01_6.png\images\news_2026-02-01_6.pnghttps://peinternational.net/register?utm_source=Bodo&utm_medium=LinkedIn&utm_campaign=MediaBodos&utm_term=MediaBodos&utm_content=MediaBodospeinternational.net
Tape-Out of Vertical Power Solution for AI Data CentersAmber Semiconductor announced the successful tape ...13687Industry NewsTape-Out of Vertical Power Solution for AI Data CentersAmber Semiconductor announced the successful tape out of its AmberSemi PowerTile&trade; vertical power delivery solution design specifically for AI processors in datacenters. PowerTile is a 1,000 A vertical power device that can be mounted on the backside of a server board, directly beneath the processor. By delivering power through a vertical path rather than traditional lateral distribution, PowerTile reduces power distribution losses to the processor by more than 85 %. PowerTile is a scalable solution designed to support CPUs, GPUs, FPGAs and other high-performance processors requiring large current delivery in minimal space. Measuring 20 mm &times; 24 mm &times; 1.68 mm, a single PowerTile can deliver up to 1,000 A directly to the processor. Multiple devices can be paralled to scale beyond 10 kA. The company expects to begin evaluation and testing with key partners later this year, with initial products shipping in material production volumes in 2027.15.01.2026 08:00:00Jannews_2026-02-01_3.jpg\images\news_2026-02-01_3.jpghttps://www.ambersemi.com/ambersemi.com
10 Watt Wide-Input Converters for Industrial ApplicationsTRACO Power releases its TMR 10WI series of isolat...13701Product Release10 Watt Wide-Input Converters for Industrial ApplicationsTRACO Power releases its TMR 10WI series of isolated DC/DC converters designed for versatility, offering an input range from 4.5 V<sub>DC</sub> to 75 V<sub>DC</sub> at an efficiency of up to 89 %. Each unit is equipped with protection features, including short-circuit protection, overcurrent limitation, undervoltage lockout, and remote on/off control. Certified to IEC/EN/UL 62368-1 standards, the series supports an operating temperature range of -40 °C to +70 °C and is rated for altitudes up to 5000 meters. Housed in a SIP-8 plastic case, the TMR 10WI series is available in both single and dual output configurations, making it suitable for industrial applications.14.01.2026 14:30:00Jannews_2026-02-01_17.png\images\news_2026-02-01_17.pnghttps://www.tracopower.com/de/tmr10witracopower.com
40 W and 75 W Railway DC/DC ConvertersRECOM announced two DC/DC converters for the rail ...13697Product Release40 W and 75 W Railway DC/DC ConvertersRECOM announced two DC/DC converters for the rail market with an 11:1 input range to cover all nominal input voltages from 24 V to 110 V<sub>DC</sub>, with 24 V output and a 12 V and 15 V output version coming soon. Models RMD40-UW and RMD75-UW have trimmable outputs with reinforced isolation, rated at 40 W (60 W/10 s boost) and 75 W (90 W/10 s boost), respectively. The parts are offered as lightweight baseplate-cooled with a conversion efficiency of better than 90%, which means that they can operate at full power for OT4+ST1&ST2 classes from -40 °C to +85 °C with no additional cooling in any mounting position. Features like EN50121-3-2 filtering and disturbance protection, input reverse polarity protection, inrush current limiting, remote on/off, power-good signal/contacts, output trim and internal OR-ing diode for paralleling/redundant operation are already built in. An active hold-up circuit provides &ge;10 ms ride-through across the whole input range. Protection against short circuits, over-current, over-temperature and over-voltage is included as well. The RMD40-UW is presented in a compact 100 &times; 60 &times; 30 mm&sup3; package while the RMD75-UW just measures 110 &times; 73 &times; 40 mm&sup3;. Connections are by block terminals or optionally by Cage Clamp terminals as suffix /PT and a DIN-rail mounting option is available for both versions. The units come with aluminum housing in IP20, the electronic part is conformally coated for OV2/PD2 environment and both families fulfill EN45545-2 - HL3 fire protection hazard level.14.01.2026 10:30:00Jannews_2026-02-01_13.jpg\images\news_2026-02-01_13.jpghttps://recom-power.com/en/knowledgebase/newsroom/rec-n-40w-and-75w-railway-dc!sdcs-are-fully-featured-448.html?3recom-power.com
Product Navigator Directs Engineers to the right ComponentWürth Elektronik introduces an online tool that si...13689Industry NewsProduct Navigator Directs Engineers to the right ComponentWürth Elektronik introduces an online tool that simplifies the search for the right components. The Product Navigator helps users select electronic and electromechanical components through practical example applications and typical topologies. With the Navigator, Würth Elektronik refines an approach that has been proven in the Application Guide since 2021. The Application Guide is now fully integrated into the significantly expanded Product Navigator. The advantage: Developers can now find the products relevant to their application area more quickly, without having to work their way through extensive catalogs. The tool’s navigation offers the following application areas to choose from: Shielding and grounding, cable assembly solutions, line filters, power supplies, DC filters, thermal management, optoelectronics, power distribution, IC peripherals, human–machine interaction (switches and displays), high-frequency and wireless communication, as well as measurement and sensor technology. Each area offers typical topologies and additional content to support electronics developers in designing their applications.14.01.2026 10:00:00Jannews_2026-02-01_5.jpg\images\news_2026-02-01_5.jpghttps://www.we-online.com/en/news-center/press?instance_ID=5506&d=release-product-navigatorwe-online.com
Sampling of four Trench SiC-MOSFET Bare Dies for Power Semiconductors startsMitsubishi Electric Corporation has started shippi...13688Industry NewsSampling of four Trench SiC-MOSFET Bare Dies for Power Semiconductors startsMitsubishi Electric Corporation has started shipping samples of four trench SiC-MOSFET bare dies (chips not encased in protective housing) designed for use in power electronics equipment, such as electric vehicle traction inverters, onboard chargers, and power supply systems for renewable energy sources including solar power.14.01.2026 09:00:00Jannews_2026-02-01_4.jpg\images\news_2026-02-01_4.jpghttps://www.mitsubishielectric.com/en/pr/2026/0114-b/mitsubishielectric.com
Protection Zener Diodes with Ratings up to 75 VToshiba Electronics has added four products to its...13696Product ReleaseProtection Zener Diodes with Ratings up to 75 VToshiba Electronics has added four products to its CUZ series of surge protection Zener diodes. The CUZ56V, CUZ62V, CUZ68V, and CUZ75V, with Zener voltages (VZ) of 56 V, 62 V, 68 V, and 75 V respectively, are designed for use in power supplies for data centers, network equipment, industrial systems, and system architectures with 48 V and above. They are designed to protect semiconductor devices against long pulse width switching surges and induced lightning surges, which can occur in the range of microseconds to milliseconds, as well as overvoltage pulses that are close to DC. While Toshiba’s TVS diodes specialise in ESD protection, these Zener products protect against surges while still providing electrostatic discharge (ESD) protection. All four products in this specific lineup share an absolute maximum power dissipation (PD) of 600 mW and a peak pulse current (IPP) rating of 5 A, according to IEC61000-4-5 at a peak transient of 8/20 &micro;s. For the individual products, the measured V<sub>Z</sub> (min. to max.) ranges span from 52 V to 60 V (CUZ56V) up to 70 V to 79 V (CUZ75V), measured at a current (I<sub>Z</sub>) of 2 mA. Additionally, ESD voltages range from &plusmn;13 kV (CUZ56V) to &plusmn;23 kV (CUZ75V) under contact conditions, and 5 kV under air conditions. The dynamic resistance typically ranges from 3.1 &#8486; to 4.0 &#8486;, and the typical clamp voltage ranges from 112 V to 120 V. The diodes are housed in the SOD-323 (USC) package, which features gull-wing leads.13.01.2026 09:30:00Jannews_2026-02-01_12.jpg\images\news_2026-02-01_12.jpghttps://toshiba.semicon-storage.com/eu/company/news/2026/01/diodes-20260113-1.htmltoshiba.semicon-storage.com
Larger Office in Japan openedRohde & Schwarz has opened a larger office in Osak...13692Industry NewsLarger Office in Japan openedRohde & Schwarz has opened a larger office in Osaki/Japan, with increased capabilities. The location, which replaces the original one in Shinjuku, has significantly enhanced facilities for service, repair, calibration and engineering support of test equipment as well as increased space for hosting. A test system that combines EMC receivers and automation software from Rohde & Schwarz with the AIP EMC Chassis Dynamometer enables vehicle manufacturers and Tier 1s to obtain an evaluation of the EMC performance of their designs under realistic operational conditions. AIP has enhanced this system with R&S radar target simulators to also provide vehicle-in-the-loop testing of radars in a controlled environment. This R&S office in Osaki has a dedicated space for calibration of EMC equipment and is near AIP’s new office.12.01.2026 13:00:00Jannews_2026-02-01_8.jpg\images\news_2026-02-01_8.jpghttps://www.rohde-schwarz.com/de/unternehmen/news-und-presse/all-news/rohde-schwarz-opens-larger-office-in-japan-and-increases-its-support-for-the-japanese-automotive-market-pressemitteilungen-detailseite_229356-1604489.htmlrohde-schwarz.com
MEMS-Based Hot-Switched Power Panel ValidatedMenlo Microsystems announced, in partnership with ...13675Industry NewsMEMS-Based Hot-Switched Power Panel ValidatedMenlo Microsystems announced, in partnership with Microchip Technology, that it has successfully completed the hot switching validation of a MEMS-based 1000V/500A (0.5 megawatt) relay panel that is the basis platform for future development of advanced circuit protection systems for the U.S. Navy. This accomplishment marks the first-ever validation of a MEMS-based 0.5 megawatt hot-switched relay panel for naval applications in the United States and is a critical step in the Navy’s 10-megawatt Advanced Circuit Breaker program. <br>Menlo Micro has successfully advanced through the program’s multiple phases of advancing complexity demonstrating the performance and scalability of its Ideal Switch&reg; technology for power applications. Validation testing of the latest phase was completed at Microchip Technology’s advanced power test facilities.05.01.2026 13:00:00JanNews_2026-01-15_8.jpg\images\News_2026-01-15_8.jpghttps://menlomicro.com/newsroom/menlo-micro-and-microchip-technology-validate-the-first-mems-based-hot-switched-power-panelmenlomicro.com
Chris Jacobs named Senior Vice President, Marketing and Product StrategyPower Integrations announced the appointment of Ch...13674PeopleChris Jacobs named Senior Vice President, Marketing and Product StrategyPower Integrations announced the appointment of Chris Jacobs as senior vice president for marketing and product strategy. Mr. Jacobs brings a wealth of experience in the semiconductor industry, with an outstanding record of product execution, customer acquisition and strategy development across a range of end markets. He joins Power Integrations from Micron Technology, where he served most recently as vice president and general manager for the automotive, industrial/multi-market and consumer market segments of the company’s multi-billion-dollar automotive & embedded business unit. Previously, Mr. Jacobs spent more than 25 years at Analog Devices, holding a succession of leadership roles including vice president for marketing and business development in the company’s power IC and module business and vice president and general manager for the autonomous transportation & automotive safety business unit. He holds an MBA from Boston College, an MS in electrical engineering from Northeastern University and a BS in computer engineering from Clarkson University. He has also completed executive leadership programs at Stanford University and MIT.05.01.2026 12:00:00JanNews_2026-01-15_7.jpg\images\News_2026-01-15_7.jpghttps://investors.power.com/news/news-details/2026/Power-Integrations-Names-Chris-Jacobs-Senior-Vice-President-Marketing-and-Product-Strategy/default.aspxpower.com
Fabio Necco Appointed as CEOCambridge GaN Devices (CGD) announced the appointm...13671PeopleFabio Necco Appointed as CEOCambridge GaN Devices (CGD) announced the appointment of Fabio Necco as Chief Executive Officer. The move is designed to drive forward CGD’s entry into key markets. Necco takes over as CEO from CGD Co-founder, Giorgia Longobardi, who made the announcement, saying, "I am delighted to welcome Fabio to CGD and hand over the day-to-day leadership of the company while I channel my energy into my passion for bringing advanced, sustainable and energy-efficient power electronics solutions to market. Fabio, is the right person with the right skill set to take CGD into its next growth phase, and I shall do all I can to support his initiatives as I transition into my new role as CMO at CGD." Necco comes to CGD from onsemi, where he was vice president and division general manager with more than 25 years’ experience in power electronics, application engineering, vehicle electrification, and data centres, all primary market focus points of CGD. Necco said, "CGD is at an exciting juncture in its history. I have known CGD and Giorgia for years and have long been impressed with its success under her leadership. I am very excited about CGD’s unique technology and to have been chosen to lead our entire team to the next stages of product development as well as substantially increasing our presence in key markets."05.01.2026 09:00:00JanNews_2026-01-15_4.JPG\images\News_2026-01-15_4.JPGhttps://camgandevices.com/en/p/new-ceo-appointed-at-cambridge-gan-devices/camgandevices.com
Family of noise-eliminating, self-powered SiC Gate DriversAllegro MicroSystems announced the strategic expan...13678Product ReleaseFamily of noise-eliminating, self-powered SiC Gate DriversAllegro MicroSystems announced the strategic expansion of its Power-Thru&trade; isolated gate driver portfolio with the launch of the AHV85003/AHV85043 chipset. Joining the AHV85311 integrated solution, this expanded family creates a complete ecosystem for high-voltage silicon carbide (SiC) designs in AI data centers, electric vehicles (EVs), and clean energy systems. The solution simplifies the design challenge in power conversion by eliminating the need for external isolated bias supplies for gate drivers. Allegro’s Power-Thru isolated gate drivers integrate signal and power across a single isolation barrier. This approach reduces common-mode capacitance in the system by up to 15x , addressing a major source of noise that impacts efficiency. They deliver up to a 20dB improvement in electromagnetic interference (EMI) performance, which boosts overall system efficiency and eliminates countless hours spent by designers resolving noise issues. In addition to addressing the physics of noise, the expanded Power-Thru portfolio is engineered to resolve critical business challenges. To ensure supply chain resilience, both the chipset and the existing AHV85311 integrated solution support a multi-source SiC strategy. With selectable gate-to-source voltages (Vgs) of 15V, 18V, and 20V, and adjustable regulated negative voltage, designers can easily swap between SiC FETs from different vendors without redesigning their boards.05.01.2026 06:30:00JanNews_2026-01-15_11.jpg\images\News_2026-01-15_11.jpghttps://www.allegromicro.com/en/about-allegro/newsroom/press-releases/2026/sic-power-design-ai-data-centers-and-evsallegromicro.com
Strategic Move extendsEelectronics Portfolio and Industry Production Footprint in EUITG Electronics has acquired Max Holzinger & Co Gm...13669Industry NewsStrategic Move extendsEelectronics Portfolio and Industry Production Footprint in EUITG Electronics has acquired Max Holzinger & Co GmbH (MH), a Germany-based manufacturer of high-reliability components for a variety of industries. The acquisition marks a significant milestone in ITG’s long-term strategy to expand its European manufacturing footprint and strengthen regional supply capabilities. Under the new structure, MH will operate as an independent entity formally folded under ITG Deutschland GmbH, ITG Electronics’ European division. It will also carry the designation of a Member of ITG Companies, reinforcing its integration within ITG’s global family while maintaining its established identity, expertise, and customer relationships. The acquisition represents ITG’s continued European manufacturing investment, reflecting a strategic shift toward regionalized production. In 2015, ITG diversified manufacturing into Vietnam as part of a country-risk reduction initiative. A decade later, ITG is continuing this evolution by expanding its capabilities into Europe, bringing manufacturing closer to key customers across the continent and bolstering resilience through geographic diversity. "We are proud to welcome Max Holzinger & Co GmbH into the ITG family," said Martin Kuo, Director of Future at ITG Electronics. "This acquisition not only enhances our high-reliability and manufacturing capabilities, but also aligns with our long-term vision of regionalized production. With a trusted manufacturing partner based in Germany, we can better serve European customers who require precision, durability, and expedient support."01.01.2026 07:00:00JanNews_2026-01-15_2.png\images\News_2026-01-15_2.pnghttps://www.itg-electronics.com/en/news-detail/131itg-electronics.com
Unlock the Future of Electronics Manufacturing: productronica China Set to Open in March 2026The Asian electronics manufacturing industry is on...12674Event NewsUnlock the Future of Electronics Manufacturing: productronica China Set to Open in March 2026The Asian electronics manufacturing industry is once again turning its attention to Shanghai, as productronica China 2026 is set to take place at the Shanghai New International Expo Centre (Halls E1-E5, W1-W4) from March 25 to 27, 2026. This exhibition is expected to span nearly 100,000 square meters and will bring together over 1,000 high-quality companies in the electronics manufacturing industry. The exhibition is dedicated to presenting an event that integrates innovative technologies, cutting-edge products, and efficient business exchanges in the Asian electronics manufacturing industry. The 2026 floor plan has been released to accurately align with business opportunities. The exhibition will continue to take place in Halls E1-E5 and W1-W4. Each exhibition hall is arranged based on categories of exhibits and application areas, featuring a well-structured and strategic layout. This design allows exhibitors to effectively showcase their core strengths while enabling visitors to efficiently identify and focus on their target products. The exhibits cover the entire electronics manufacturing industry chain, including component manufacturing, test and measurement, quality assurance, new energy vehicle inspection technology, surface mount technology (SMT), electronics manufacturing services (EMS), automated electronic assembly, clean technology, cable processing, electronic chemical materials, dispensing and bonding technology, robotics, AGV, intelligent warehousing, sensor technology, motion control and drive technology,new energy vehicle technology as well as automotive PLC Industrial control system. The visitor registration is going on heatedly, please <a href="https://dwz.cn/dm1kDXWY">register now</a href>!28.12.2025 12:00:00Decnews_2026-01-01_7.jpg\images\news_2026-01-01_7.jpghttps://dwz.cn/dm1kDXWYproductronicachina.com
Successful Premiere of the PCIM Asia New Delhi ConferenceUnder the theme "Agent of Change", the PCIM held i...12668Event NewsSuccessful Premiere of the PCIM Asia New Delhi ConferenceUnder the theme "Agent of Change", the PCIM held its first conference in India. The Dr. Ambedkar International Conference and Exhibition Centre in New Delhi was the place to be on 9 – 10 December, with an impressive audience of industry experts taking in presentations by renowned companies in power electronics along with a targeted overview of future-oriented investment and expansion opportunities. The PCIM Asia New Delhi Conference presented itself as a force driving technological progress in the region, aiming to create a forward-thinking platform that will foster strategic partnerships and promote collaboration among major players in industry, research, and politics. With over 520 participants, more than 120 speakers, and over 75 presentations, the Indian edition of the PCIM Conference also featured professional exchange at the highest level. Current research results and technical innovations in the field of power electronics were explained in detail, providing valuable impetus for the industry’s further development. In addition, illustrative poster presentations<br>offered insights into pioneering projects and the results they have already achieved. At the center of the event, however, was naturally the conference, with the accompanying expo featuring a total of 50 exhibitors showing off their latest products and applications. Companies such as Mitsubishi Electric, Infineon, and Rohm were on hand in New Delhi to experience the dynamic Indian market for power electronics first-hand. The successful premiere of the PCIM Asia New Delhi Conference has now set the stage for further inspiring events focused on future-oriented technologies and strategic exchange, which are sure to continue driving the development of India’s power electronics industry.27.12.2025 06:00:00Decnews_2026-01-01_1.jpg\images\news_2026-01-01_1.jpghttps://www.pcim.in/index.htmlpcim.in
Manufacturing Collaboration and Business Partnership in IndiaROHM and Tata Electronics announced that they have...13670Industry NewsManufacturing Collaboration and Business Partnership in IndiaROHM and Tata Electronics announced that they have entered into a strategic partnership for semiconductor manufacturing in India for both Indian and global markets. This partnership aims to leverage the expertise and ecosystem of both the companies in order to expand business opportunities for both ROHM and Tata Electronics, thereby further strengthening the relationship between the semiconductor industries of Japan and India. As an initial focus, ROHM and Tata Electronics will establish a manufacturing framework for power semiconductors in India by combining ROHM’s leading device technologies with the advanced backend technologies of Tata Electronics. In addition, by integrating the sales channels and networks, the partnership will create new business opportunities in the Indian market and deliver higher-value solutions to a wide range of customers. As the first step in this collaboration, Tata Electronics will assemble and test ROHM’s India-designed automotive-grade Nch 100V, 300A Si MOSFET in a TOLL package, targeting mass production shipments by next year. The companies will also explore co-development of high-value packaging technologies in the future. Both companies will combine efforts to market the products manufactured through this collaboration.22.12.2025 08:00:00DecNews_2026-01-15_3.jpg\images\News_2026-01-15_3.jpghttps://www.rohm.com/news-detail?news-title=2025-12-22_news_tata&defaultGroupId=falserohm.com
High Voltage Fuses for Industrial and Energy ApplicationsThe EKO series from Schurter is designed for high-...13695Product ReleaseHigh Voltage Fuses for Industrial and Energy ApplicationsThe EKO series from Schurter is designed for high-voltage applications, providing protection up to 1000 V<sub>DC</sub> and current ratings from 50 to 1100 A. With up to 50 kA DC breaking capacity it is suited for charging infrastructure, energy storage systems, and industrial power applications. The EKO series withstands mechanical vibration, shock, chemical exposure, and extreme temperatures from -40 °C to +125 °C. Its ceramic housing and tin-plated copper alloy terminals ensure durability and stable electrical characteristics even under harsh conditions. The devices are available with Flush End, DIN-Rail, US Style Bolted Tag or Bolt-on. Optional indicators and microswitches enable easy status monitoring. The EKO series meets IEC, UL, and GB/T standards and complies with CE, RoHS, and REACH directives.19.12.2025 08:30:00Decnews_2026-02-01_11.jpg\images\news_2026-02-01_11.jpghttps://www.schurter.com/en/news/eko-hv-fuseschurter.com
Collaboration on SiC Power Semiconductor Modules with Mechanical CompatibilityFuji Electric announced an agreement with Bosch to...12669Industry NewsCollaboration on SiC Power Semiconductor Modules with Mechanical CompatibilityFuji Electric announced an agreement with Bosch to collaborate on SiC power semiconductor modules for electric vehicles that feature package compatibility. By flexibly modifying the size and number of mounted chips, these modules can accommodate a wide range of power requirements and OEM circuit configurations. Moving forward, both companies intend to develop SiC power semiconductor modules with mechanical compatibility in terms of package outer dimensions and terminal positions. This will enable either module to be integrated into an inverter system without additional mechanical modifications, thereby minimizing the adjustment effort required for customers when using both module options in their systems. This collaboration aims to shorten design periods and contribute to diversifying procurement sources. As a result, engineers will be able to use SiC power semiconductor modules from both companies without altering their inverter system specifications, leading to reduced design time and diversified procurement. Furthermore, both companies plan to jointly develop user application technologies related to cooler design and various terminal connections when integrating SiC power semiconductor modules into inverter systems, and plan to provide technical support to customers.19.12.2025 07:00:00Decnews_2026-01-01_2.jpg\images\news_2026-01-01_2.jpghttps://www.fujielectric.com/about/notice/detail/1205558_5359.htmlfujielectric.com
Thermal Jumper Chip SeriesBourns introduced its BTJ Series Thermal Jumper Ch...13684Product ReleaseThermal Jumper Chip SeriesBourns introduced its BTJ Series Thermal Jumper Chips designed to provide effective thermal dissipation in a compact form factor. These devices provide high thermal conductivity while also having insulating properties to help protect and prolong system component lifespans. Because the thermal jumper chips are able to quickly dissipate heat and do not conduct electricity, they have no impact on system operation. Available in SMD packaging, Bourns&reg; Thermal Jumper Chips provide an excellent thermal dissipation solution for a variety of mobile devices and electronic equipment that include power supplies, converters and RF and GaN amplifiers. Furthermore, the advanced design takes advantage of the chips’ insulating properties so the space between the heating element and the heat detection element can be filled to enable highly accurate heat detection. These features also help reduce the temperature rise of key components contributing to improved reliability at the system level. The Bourns&reg; BTJ Series Thermal Jumper Chips are available now and are RoHS compliant and halogen free.18.12.2025 12:30:00DecNews_2026-01-15_17.jpg\images\News_2026-01-15_17.jpghttps://bourns.com/news/press-releases/pr/2025/12/18/bourns-introduces-thermal-jumper-chip-series-that-provides-an-excellent-thermal-dissipation-solution-in-a-compact-form-factorbourns.com
Open-loop hall-effect Current Sensors for electric and hybrid VehiclesLittelfuse announced the release of six new automo...13683Product ReleaseOpen-loop hall-effect Current Sensors for electric and hybrid VehiclesLittelfuse announced the release of six new automotive current sensors designed to enhance electric and hybrid vehicle performance, efficiency, and functional safety. The Littelfuse automotive qualified sensors provide precise, isolated current measurement across battery-management, motor-control, and pyro-fuse safety systems. Utilizing open-loop hall-effect technology, the sensors deliver reliable performance in compact, bus-bar-mounted form factors. Output configurations include analog-voltage and digital (CAN/LIN) communication, giving system designers flexibility in integrating with existing EV architectures. As EV and hybrid systems evolve, engineers face growing demands for high accuracy, fast response, and compliance with functional-safety standards. This current-sensor family helps OEMs and Tier 1 suppliers meet those challenges by offering scalable, ASIL-capable solutions that simplify design while improving efficiency, safety, and overall system reliability. Across the automotive qualified product family, nominal current ranges extend up to &plusmn;1500 A, with high total-error performance and minimal thermal drift. Models featuring CAN 2.0B communication include AUTOSAR E2E Profile 1A diagnostics and ASIL-C-capable current measurement, enabling integration into safety-critical systems such as battery control or disconnect units.18.12.2025 11:30:00DecNews_2026-01-15_16.jpg\images\News_2026-01-15_16.jpghttps://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/littelfuse-introduces-automotive-qualified-current-sensors-for-ev-battery-motor-and-safety-systemslittelfuse.com
High-Voltage DC Contactors support Functional SafetyTDK Corporation introduced the HVC27*MC series of ...12684Product ReleaseHigh-Voltage DC Contactors support Functional SafetyTDK Corporation introduced the HVC27*MC series of high-voltage DC contactors equipped with a mechanically linked, normally-closed auxiliary contact (mirror contact) compliant with IEC 60947-4-1. This feature provides precise contact position feedback for safety-critical applications in electric mobility and industrial energy systems. Measuring 86.5 x 95 x 44 mm&sup3; and "weighing" 530 g, these gas-filled contactors are suited for battery disconnect units (BDUs), energy storage systems (ESS), DC fast charging, and uninterruptible power supplies (UPS). Designed for DC voltages of 1000 V, the HVC27*MC series is available in 300 A, 400 A, and 500 A continuous current versions, with a single-shot capability of up to 900 A at 1000 V in less than 20 ms. The safety component is fully bidirectional with polarity-free main terminals. A hermetically sealed and gas-filled ceramic arc chamber takes care of a safe disconnection. The normally closed auxiliary contact reliably reports the main contact state, enabling the immediate detection of switching anomalies or failures. Offered in versions with 12 V or 24 V coil voltage and UL, CE, and UKCA certifications, the contactors are ready for global deployment. Typical applications are in commercial vehicles, industrial machinery, and high-voltage mobility systems.17.12.2025 15:30:00Decnews_2026-01-01_17.jpg\images\news_2026-01-01_17.jpghttps://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/tdk-adds-a-mirror-contact-to-the-hvc27-series-to-support-functional-safety/3659846tdk-electronics.tdk.com
Protection for sensitive Power SemiconductorsBourns expanded its POWrFuse&trade; High-Power Fus...12680Product ReleaseProtection for sensitive Power SemiconductorsBourns expanded its POWrFuse&trade; High-Power Fuses with the PF-SRC50E Series. Designed to protect today’s more sensitive power semiconductors, this series features 500 V DC and 690 V AC rated voltage with an interrupting rating of up to 100 kA. Delivering higher voltage protection support in a compact footprint (17.5 mm diameter x 46 mm length), these fuses are suited for power inverters, converters, rectifiers, AC/DC drives, Uninterruptible Power Supplies (UPS) and reduced voltage motor starters. The PF-SRC50E Series is engineered to meet the requirements of UL 248-13 and IEC 60269-4 (aR class) standards for dependable protection and safe operation in high-voltage AC and DC systems. The devices are offered in a bolt-down package.17.12.2025 11:30:00Decnews_2026-01-01_13.jpg\images\news_2026-01-01_13.jpghttps://www.bourns.com/news/press-releases/pr/2025/12/17/designed-to-protect-sensitive-power-semiconductors--bourns-announces-500-vdc-690-vac-rated-fuse-seriesbourns.com
PMIC capable of harvesting full-range of hybrid indoor-outdoor PV Cellse-peas will made the public debut of its AEM15820 ...13682Product ReleasePMIC capable of harvesting full-range of hybrid indoor-outdoor PV Cellse-peas will made the public debut of its AEM15820 power management IC (PMIC), the a single-chip PMIC capable of spanning the full dynamic range of hybrid indoor-outdoor PV cells. These hybrid PV cells have a wide power output that can vary from microwatts under indoor lighting to several watts when in direct sunlight. To manage this range, multi-PMIC solutions have previously been required, adding cost and complexity to the overall system designs. They are being implemented in a wide range of consumer applications, including sports or hiking computers and self-charging headphones, and will enable many more, such as PV-charged earbud cases and e-readers. Additional markets include remote security cameras, smart glasses, power banks, and smart-backpack power modules. It is optimized for use with both batteries and lithium-ion capacitors (LiC) and features an ultra-low-power cold start of 5 &micro;W at 275 mV.17.12.2025 10:30:00DecNews_2026-01-15_15.png\images\News_2026-01-15_15.pnghttps://e-peas.com/news/ces-2026-e-peas-to-debut-aem15820-industrys-first-pmic-capable-of-harvesting-full-range-of-hybrid-indoor-outdoor-pv-cells/e-peas.com
Acquisition to Drive Custom Power IC LeadershipCyient Semiconductors has signed a definitive agre...13672Industry NewsAcquisition to Drive Custom Power IC LeadershipCyient Semiconductors has signed a definitive agreement to acquire a majority stake in Kinetic Technologies, a global leader in power management, high-performance analog and mixed-signal ICs for a total consideration of up to USD 93 Mn. The combination establishes a scaled platform in the $40B+ power semiconductor market, accelerating Cyient Semiconductors’ growth trajectory across data centers, electrification, automotive, networking, industrial automation, and the fast-emerging edge AI compute segment. This acquisition is a game-changer for Cyient Semiconductors’ ambition to establish India’s first ASIC-led custom power semiconductor powerhouse. Bringing together Cyient Semiconductors’ design leadership with Kinetic Technologies’ proven portfolio of high-performance analog and mixed-signal ICs - including power conversion solutions, display power, protection, and interface solutions - the company is positioned to take a strong leadership position in high-growth markets.17.12.2025 10:00:00DecNews_2026-01-15_5.jpg\images\News_2026-01-15_5.jpghttps://cyientsemi.com/press-release/cyient-semiconductors-acquires-majority-stake-in-kinetic-technologies-to-drive-custom-power-ic-leadership-for-edge-ai-and-high-performance-compute-marketscyientsemi.com
Brushed DC Motor Driver IcsROHM has developed two additional motor driver ICs...12676Product ReleaseBrushed DC Motor Driver IcsROHM has developed two additional motor driver ICs for brushed DC motors, BD60210FV (20 V, 2 channels) and BD64950EFJ (40 V, 1 channel). They are intended for use in home and office appliances such as refrigerators, air conditioners, printers, and robotic vacuum cleaners. The devices achieve a standby current of typically 0.0 &micro;A (maximum: 1.0 &micro;A). The BD60210FV can function as a dual H-bridge (2ch) motor driver with direct PWM control, capable of driving two DC brush motors, a bipolar stepper motor driver, or solenoid driver. Its H-bridge circuit configuration eliminates the need for a boost circuit, minimizing external components and contributing to space-saving and simplified design. It supports input voltage from 8 V to 18 V and 1 A/phase continuous current and 4 A/phase peak current. The BD64950EFJ features a single H-bridge (1ch) that supports both direct PWM control and constant current PWM control. Its low on-resistance design reduces heat generation. With a 40 V withstand voltage and 3.5 A continuous current (6 A peak), it is suitable for high-powered, high-voltage (24 V) DC brush motor applications.17.12.2025 07:30:00Decnews_2026-01-01_9.jpg\images\news_2026-01-01_9.jpghttps://www.rohm.com/news-detail?news-title=2025-12-17_news_motor&defaultGroupId=falserohm.com
eBook provides Guidance on Designing 48V Power Delivery NetworksVicor has published "Accelerate your move to a hig...13677Industry NewseBook provides Guidance on Designing 48V Power Delivery NetworksVicor has published "Accelerate your move to a high-performance 48V power delivery network", a new 34-page eBook. This resource provides engineers and system designers with helpful tips and concepts to consider to transition from 12V power delivery networks (PDNs) to 48V. This free in-depth guide will help optimize power delivery to gain a competitive edge in the market. Today computing, automotive, and industrial applications demand higher performance and efficiency and traditional 12V architectures are reaching their limits. Higher performing 48V architectures that reduce I&sup2;R losses are emerging as the obvious solution which not only unlocks power system capabilities, it also enables new levels of innovation. Filled with useful insights and real-life applications, the informative eBook provides expert guidance on designing 48V power delivery networks to enhance the performance, efficiency and reliability of industrial products. Engineers can learn how the 48V PDN evolved, how to overcome power design challenges and how others have implemented successful power delivery networks that deliver competitive advantage. Readers can also learn how to leverage high-performance power modules to quickly prototype and implement a 48V PDN. "With the rapid growth of AI and the infusion of higher voltage electrification, power delivery can provide a competitive advantage," said David Krakauer, VP of Marketing, Vicor. "This eBook explores why 48V distribution is quickly becoming the standard for next-generation designs, delivering benefits such as reduced conduction losses, improved thermal performance and smaller, lighter power delivery networks. This eBook offers the insights you need to accelerate your transition from 12V to 48V."16.12.2025 15:00:00DecNews_2026-01-15_10.jpg\images\News_2026-01-15_10.jpghttps://www.vicorpower.com/documents/eBook/Vicor-48V-eBook.pdfvicorpower.com
Small Ferrite-Core wirewound Chip InductorsCoilcraft’s 016008F series is claimed to be the wo...12678Product ReleaseSmall Ferrite-Core wirewound Chip InductorsCoilcraft’s 016008F series is claimed to be the world’s smallest wirewound ferrite chip inductor, designed for high-frequency applications where board space is constrained. With dimensions of 0.5 mm x 0.25 mm x 0.38 mm, it offers a DCR of 0.18 Ohms. Typical applications are compact devices such as smartphones, IoT modules, and wearables.16.12.2025 09:30:00Decnews_2026-01-01_11.jpg\images\news_2026-01-01_11.jpghttps://www.coilcraft.com/en-us/products/rf/ferrite-core-chip-inductors/01005-(0402)/016008f/coilcraft.com
PSMA Magnetics Committee and PELS TC2 High Frequency Magnetics WorkshopThe PSMA Magnetics Committee and IEEE PELS are cur...13668Event NewsPSMA Magnetics Committee and PELS TC2 High Frequency Magnetics WorkshopThe PSMA Magnetics Committee and IEEE PELS are currently planning to conduct the eleventh Power Magnetics at High Frequency Workshop on Saturday, March 21, 2026, which is the day before and at the same venue as APEC 2026 in San Antonio, TX. The 2026 workshop will build on the ongoing dialogue generated throughout the first ten workshops. The purpose of this workshop is to explore recent improvements in magnetic materials, coil (winding) design, construction, and fabrication, as well as evaluation techniques, characterization methods, and modelling and simulation tools. The workshop targets the advancements deemed necessary by the participants for power magnetics to meet the technical expectations and requirements of new market applications where higher operating frequencies and emerging topologies are driven by continuous advances in circuits topologies and semi-conductor devices. The target audiences for the 2026 Power Magnetics @ High Frequency workshop include the designers of power magnetic components for use in electronic power converters, those who are responsible to implement the most technologically advanced power magnetic components necessary to achieve higher power densities, specific physical aspect ratios such as low profile, higher power efficiencies and improved thermal performance. The target audience also includes people involved in the supply chain for the power magnetics industry ranging from manufacturers of magnetic materials and magnetic structures, fabricators of magnetic components, providers of modelling and simulation software as well as manufacturers of test and characterization equipment.15.12.2025 06:00:00DecNews_2026-01-15_1.jpg\images\News_2026-01-15_1.jpghttps://psma.com/technical-forums/magnetics/workshoppsma.com
FOC-based BLDC Motor Control with Power Regulation up to 15ABLDC FOC 2 Click is a new motor control Click boar...13680Product ReleaseFOC-based BLDC Motor Control with Power Regulation up to 15ABLDC FOC 2 Click is a new motor control Click board&trade; from MIKROE. The compact Click add-on boards enable developers to rapidly provide proof-of-concept, then prototype and code new embedded projects. BLDC FOC 2 Click provides provides robust and reliable control of three-phase brushless DC (BLDC) motors using advanced Field-Oriented Control (FOC) techniques, ensuring smooth operation, high efficiency and low acoustic noise. Comments Nebojsa Matic, CEO of MIKROE: "This new Click board is ideal for automotive and industrial applications such as battery cooling fans, radiator fans, and fuel or oil pump control systems. It is part of our 140+ strong family of motor control Click boards and over 850 projects - with working code - featuring the BLDC FOC 2 Click can be found on MIKROE’s embedded projects platform, EmbeddedWiki." BLDC FOC 2 Click is based on the A89307, an automotive FOC BLDC motor controller from Allegro Microsystems, designed to deliver up to 15A of output current across a wide voltage range from 4.4V to 30V. It supports multiple operating modes, including constant speed, torque, power and open-loop control, while offering flexible configuration via EEPROM and I2C interface for parameter setting, ON/OFF control and speed feedback. It also integrates Allegro’s proprietary Soft-On Soft-Off (SOSO) feature for quiet transitions, comprehensive protection mechanisms, and both analog and digital control mode.12.12.2025 08:30:00DecNews_2026-01-15_13.jpg\images\News_2026-01-15_13.jpghttps://www.mikroe.com/bldc-foc-2-clickmikroe.com
Co-Development on SMPS Solutions for AI Server Power Supplies in KoreaThe French company Wise Integration and the Korean...12673Industry NewsCo-Development on SMPS Solutions for AI Server Power Supplies in KoreaThe French company Wise Integration and the Korean companies Powernet and KEC have signed a strategic memorandum of understanding (MoU) to co-develop next-generation switched-mode power supply (SMPS) solutions designed specifically for AI server applications in South Korea. The partnership aligns with the country’s push to expand AI infrastructure and build out the next generation of high-density data centers. Under the agreement, Wise Integration will supply its GaN power devices, digital-control expertise and technical support. Powernet Technologies will lead the development of SMPS designs using Wise’s WiseGan&reg; and WiseWare&reg; technologies. KEC Corporation will manage backend manufacturing, including module integration and system-in-package production tailored to the thermal and reliability demands of AI-server racks. The collaboration builds on an earlier partnership between Wise Integration and Powernet, launched to serve OEMs that require compact, digitally controlled power-supply systems for faster, smaller and more energy-efficient electronic equipment.11.12.2025 11:00:00Decnews_2026-01-01_6.jpg\images\news_2026-01-01_6.jpghttps://wise-integration.com/wise-integration-powernet-and-kec-agree-to-co-develop-advanced-smps-solutions-for-ai-server-power-supplies-in-korea/wise-integration.com
Dual-Output 400 W Module for Configurable Power SuppliesAdvanced Energy Industries introduced a dual-outpu...12679Product ReleaseDual-Output 400 W Module for Configurable Power SuppliesAdvanced Energy Industries introduced a dual-output 24 V/24 V module for its NeoPower&trade; family of configurable power supplies, delivering up to 400 W (200 W per output) in a compact 2.5-inch form factor. This added module enables up to a total of 16 isolated outputs per power supply, streamlining system design for engineers in industrial, medical and test environments. Its power density is 18 W/in&sup3;. The digitally controlled module is certified according to IEC/EN/UL 62368-1 (industrial), IEC/EN 60601-1 (medical), and SEMI F47. Target applications include medical, industrial, semiconductor and test and measurement.11.12.2025 10:30:00Decnews_2026-01-01_12.png\images\news_2026-01-01_12.pnghttps://www.advancedenergy.com/de-de/about/news/press/advanced-energy-unveils-a-dual-output-400-w-module/advancedenergy.com
Strategic Collaboration of Automotive Tier-1 Supplier and Semiconductor ManufacturerOnsemi extended its strategic engagement with FORV...12672Industry NewsStrategic Collaboration of Automotive Tier-1 Supplier and Semiconductor ManufacturerOnsemi extended its strategic engagement with FORVIA HELLA with the adoption of onsemi’s PowerTrench&reg; T10 MOSFET technology across its automotive platforms. Onsemi’s PowerTrench T10 MOSFET technology delivers high efficiency with low conduction and switching losses, enabling high power density in a compact footprint. The collaboration is expected to "deliver smarter automotive power solutions with superior efficiency and optimized performance".11.12.2025 10:00:00Decnews_2026-01-01_5.jpg\images\news_2026-01-01_5.jpghttps://www.onsemi.com/company/news-media/press-announcements/en/onsemi-and-forvia-hella-extend-strategic-collaboration-with-next-generation-power-technologyonsemi.com
Solder Paste for High Print Consistency and Easy CleanabilityIndium Corporation announced the global availabili...13681Product ReleaseSolder Paste for High Print Consistency and Easy CleanabilityIndium Corporation announced the global availability of SiPaste&reg; C312HF, a halogen-free, cleanable solder paste formulated for fine-feature printing. Designed with Type 7 powder for aperture sizes down to 60&micro;m, it enables fine-feature printing in advanced system-in-package applications. SiPaste C312HF boosts process yields that combine stencil print transfer efficiency and stencil life with consistent printing, response-to-pause, and reflow performance. SiPaste C312HF post-reflow flux residue can be cleaned with a standard cleaning process using semi-aqueous chemistries or a saponifier, or it can be used as a standard no-clean paste in processes where post-reflow cleaning is not required. Indium Corporation’s SiPaste series is specifically designed for fine-feature printing with fine powders ranging from Type 5 to Type 8, including the SiPaste C312HF with Type 7 powder. The products help Avoid the Void&reg;, reduce slumping, and demonstrate consistent superior printing performance.11.12.2025 09:30:00DecNews_2026-01-15_14.png\images\News_2026-01-15_14.pnghttps://www.indium.com/press-releases/indium-corporation-launches-new-solder-paste-for-high-print-consistency-and-easy-cleanability/indium.com
Power Factor Correction Market to surpass $8.2 Billion by 2033The global Power Factor Correction (PFC) Market is...12671Industry NewsPower Factor Correction Market to surpass $8.2 Billion by 2033The global Power Factor Correction (PFC) Market is poised for substantial growth, projected to rise from an estimated $4.6 billion in 2024 to approximately $8.2 billion by 2033, reflecting a robust Compound Annual Growth Rate (CAGR) of 6.5 % over the forecast period. This is one of the results of a market research report from Market Intelo. The PFC market’s expansion is fueled by a combination of regulatory pressure, cost-saving benefits, and technological advancements. The key growth catalysts are strict regulatory compliance, energy cost optimization, rapid industrialization and urbanization as well as equipment protection. The market researchers have figured out the following emerging technological trends: Firstly, there is a dominance of active PFCs, which means a shift from traditional passive systems to Active Power Factor Correction (APFC) for better efficiency, real-time response, and harmonic mitigation. The second trend is smart grid compatibility, because advanced PFC solutions are essential for grid stability, managing power fluctuations from intermittent renewable energy sources like solar and wind. The third trend are modular and compact designs: Developing smaller, more efficient PFC devices for integration into a broader range of applications, including smaller commercial units and EV charging infrastructure. Therefore, the company says that the power factor correction market is on a trajectory to become an essential component of the global Digital Energy Transition. The convergence of AI-driven power quality analytics, miniaturization of components, and a relentless global focus on decarbonization is said to ensure sustained, high-value growth through 2033. PFC solutions will evolve from mere corrective devices to fully integrated, intelligent energy optimization hubs within the industrial and commercial electrical infrastructure.11.12.2025 09:00:00Decnews_2026-01-01_4.png\images\news_2026-01-01_4.pnghttps://marketintelo.com/report/power-factor-correction-marketmarketintelo.com
Power Semiconductors: Global Distribution NetworkNavitas Semiconductor has expanded its distributio...12670Industry NewsPower Semiconductors: Global Distribution NetworkNavitas Semiconductor has expanded its distribution agreement with Avnet, making Avnet a globally franchised strategic distribution partner for Navitas. The deal is part of the ongoing consolidation of Navitas’ franchised distribution partners. Under the terms of the partnership, Avnet will supply technical and commercial expertise for Navitas’ GaN and SiC, high-voltage and high-power wide bandgap semiconductor devices. This will better support the growth of AI data centers, high performance computing, renewable energy, grid infrastructure, and industrial electrification.11.12.2025 08:00:00Decnews_2026-01-01_3.jpg\images\news_2026-01-01_3.jpghttps://navitassemi.com/navitas-expands-global-distribution-network-with-avnet/navitassemi.com
Surface-Mount FuseWith the Surface-Mount Fuse USE 2410 SCHURTER intr...12683Product ReleaseSurface-Mount FuseWith the Surface-Mount Fuse USE 2410 SCHURTER introduces a quick-acting F fuse which is completely without internal solder joints. AEC-Q200 tested, sealed against potting compounds and designed for extreme temperatures, the USE 2410 is intended for protection in applications ranging from industrial and automotive to medical technology. It is designed for 125-250 V<sub>AC</sub> and 86-125 V<sub>DC</sub>. In the temperature range from -55 °C to 125 °C the breaking capacity is up to 200 A, while the rated currents are specified from 0.6 to 10 A. Manufactured from UL 94V-0 materials – fiber-reinforced plastic and gold-plated copper terminals – the fuse is certified to UL, VDE, RoHS and REACH. Typical applications include battery-operated systems, LED drivers, ballasts, medical and industrial equipment, power supplies, and white goods. In automotive (IATF 16949) or aerospace, it protects against overload and short circuit.10.12.2025 14:30:00Decnews_2026-01-01_16.jpg\images\news_2026-01-01_16.jpghttps://www.schurter.com/en/news/use-2410-wire-in-air-redefinedschurter.com
Michael Budde elected President of ESIAThe General Assembly of the European Semiconductor...13676PeopleMichael Budde elected President of ESIAThe General Assembly of the European Semiconductor Industry Association (ESIA) has elected Michael Budde, President Mobility Electronics at Bosch, as the organisation’s new President for the next two years. ESIA represents and promotes the common interests of the Europe-based semiconductor industry towards the European institutions and stakeholders. Mr Budde is succeeding Infineon Technologies’ CEO Jochen Hanebeck. Michael Budde has served as divisional chief executive since October 2022. His career within Bosch spans over two-and-a-half decades of leadership experience and garnered him comprehensive expertise of the automotive industry. Mr Budde had gathered insights in electrical drives, battery systems, and various sales & marketing roles, including an international assignment in the United States. Under his guidance, Bosch has strengthened its position in semiconductor-based solutions for consumer and mobility applications, leveraging his deep understanding in the automotive industry and a close collaboration with OEMs. He holds a degree in mechanical engineering from the Rheinische Fachhochschule (RFH) in Cologne, Germany.10.12.2025 14:00:00DecNews_2026-01-15_9.jpg\images\News_2026-01-15_9.jpghttps://www.eusemiconductors.eu/esia/newseusemiconductors.eu
Current Sense ResistorStackpole’s CSSU2512 current sense resistor shows ...12682Product ReleaseCurrent Sense ResistorStackpole’s CSSU2512 current sense resistor shows a 5-watt power rating in a standard 2512 footprint. Its all-metal construction and thermally conductive design substantially achieves thermal performance on par with other 2512-size current sense chips rated at just 3 W. The devices are available in resistance values from 1 to 10 m&#8486;, with 1 % tolerance and a 50 ppm temperature coefficient of resistance (TCR). The resistor complies to AEC according to CSSU2512.10.12.2025 13:30:00Decnews_2026-01-01_15.png\images\news_2026-01-01_15.pnghttps://www.seielect.com/catalog/SEI-CSSU.pdfseielect.com
1200 V SiC ModulesSemiQ has expanded its third-generation QSiC&trade...12681Product Release1200 V SiC ModulesSemiQ has expanded its third-generation QSiC&trade; MOSFET product line by seven devices, including high-current S3 half-bridge (for example GCMX2P3B120S3B1-N), B2T1 six-pack (e. g. GCMX020A120B2T1P) and B3 full-bridge packages like the GCMX008B120B3H1P. The devices are engineered for current capabilities of up to 608 A and a junction-to-case thermal resistance of just 0.07 °C/W (in the 62 mm standard S3 half-bridge format). The six-pack modules integrate the three-phase power stage and have an R<sub>DSon</sub> range of 19.5 to 82 m&#8486;. They are designed for motor drives and advanced AC/DC converters. The full-bridge modules deliver current capabilities of up to 120 A and an on-resistance down to 8.6 m&ohm,. This combination, coupled with a thermal resistance of 0.28 °C/W is intended e. g. for single-phase inverters and high-voltage DC/DC systems. The devices are breakdown voltage tested to over 1350 V.10.12.2025 12:30:00Decnews_2026-01-01_14.jpg\images\news_2026-01-01_14.jpghttps://semiq.com/semiq-launches-gen3-1200-v-s3-modules-with-record-current-density-for-high-power-industrial-and-ev-applications/semiq.com
CWIEME Berlin unveils Electric Motor ForumCWIEME Berlin, an event for coil winding, transfor...12657Event NewsCWIEME Berlin unveils Electric Motor ForumCWIEME Berlin, an event for coil winding, transformer, electric motor and e-mobility technologies, has announced the launch of the Electric Motor Forum, a brand-new feature debuting at the 2026 edition of the show in Berlin, May 19 - 21. The Electric Motor Forum will provide a dedicated space for the entire European electric motor industry to come together, from automotive and industrial manufacturers to HVAC and consumer applications, in an environment designed to foster collaboration, innovation and community. Developed in response to visitor feedback and the growing demand for clearer product zoning, the new forum will serve as a strategic cluster that mirrors the success of the 2025 Transformer Hub in Hall 27, which became one of the show’s best-attended areas. The Electric Motor Forum will feature a vibrant mix of exhibition stands, networking areas and interactive content, including panel discussions, roundtables and expert-led talks. Content will explore key themes such as supply chain resilience, automation and sustainable materials. An Innovation Zone, dedicated Power Hub and Electric Motor Stage will help create a true content hub - not just a hall, but a dynamic meeting point for suppliers, buyers and policymakers to discuss shared challenges and opportunities.10.12.2025 11:00:00Decnews_2025-12-15_6.jpg\images\news_2025-12-15_6.jpghttps://berlin.cwiemeevents.com/homeberlin.cwiemeevents.com
SiC MOSFET Family extendedInfineon Technologies launches packages for the Co...12658Product ReleaseSiC MOSFET Family extendedInfineon Technologies launches packages for the CoolSiC&trade; MOSFET 750 V G2 technology for high system efficiency and power density in automotive and industrial power conversion applications. These devices are now available in a range of packages, including Q-DPAK and D2PAK, offering a portfolio with typical R<sub>DS(on)</sub> values up to 60 m&#8486; at 25 °C. Typical applications are, for example, onboard chargers and HV-LV DC/DC converters in the automotive sector, server and telecom SMPS, along with EV charging infrastructure in the industrial applications. R<sub>DS(on)</sub> values of 4 m&#8486; enable applications that require exceptional static-switching performance, such as eFuse, high-voltage battery disconnect switches, solid-state circuit breakers, and solid-state relays. One of the key features of the CoolSiC MOSFET 750 V G2 technology is its top-side cooled Q-DPAK package, which provides adequate thermal performance and reliability. Additionally, the CoolSiC MOSFETs 750 V G2 offer a combination of a typical threshold voltage V<sub>GS(th)</sub> of 4.5 V at 25 °C. Furthermore, the technology allows for extended gate driving capabilities, supporting static gate voltages of up to -7 V and transient gate voltages of up to -11 V.10.12.2025 06:30:00Decnews_2025-12-15_7.jpg\images\news_2025-12-15_7.jpghttps://www.infineon.com/market-news/2025/infpss202512-036infineon.com
Power Management Resource CenterMouser Electronics announces its comprehensive pow...13673Industry NewsPower Management Resource CenterMouser Electronics announces its comprehensive power management resource center. With the proliferation of compact, high-performance, and battery-operated devices, power management design is critical to achieving optimal performance. By leveraging new advancements in power management, such as smart grid management technology, DC microgrids can enhance energy efficiency and power quality. Their native DC architecture provides seamless integration with DC loads and renewable energy systems, such as EV charging infrastructure. Another method of power management is energy harvesting, where improved conversion efficiency in solar, motion, and thermal harvesting techniques extends battery life or even enables completely battery-free operation. For chip-level power and performance, modern embedded systems today utilize configurable logic blocks (CLBs). CLBs enable hardware-based functions, such as timing control and power sequencing, resulting in faster response times, reduced CPU load, and lower power consumption. Together, these advancements create a balanced system where power is generated, distributed, and consumed with maximum efficiency, fundamentally improving power management in electronics. Mouser’s technical team and trusted manufacturing partners tailor the resource center content to provide a trusted source of articles, blogs, eBooks, and new products from top manufacturers for power management. The hub also offers infographics on battery energy storage systems (BESS), helping professionals understand the system complexities and how to select the best-suited components. For engineers looking to stay ahead of the accelerating pace of advanced power management, the resource center serves as a valuable resource.09.12.2025 11:00:00DecNews_2026-01-15_6.png\images\News_2026-01-15_6.pnghttps://eu.mouser.com/newsroom/publicrelations-resources-power-management-2025final?srsltid=AfmBOor6Yn-2RfsN_tVleV_OZC5sMSA51N4TI7WwI34mwEhO4Am-gTBKmouser.com
Asymmetrical TVS Diodes for 12 V Battery SystemsLittelfuse launched the TPSMB Asymmetrical Series ...12677Product ReleaseAsymmetrical TVS Diodes for 12 V Battery SystemsLittelfuse launched the TPSMB Asymmetrical Series TVS Diodes (TPSMB2412, TPSMB2616, TPSMB2818, TPSMB3018). These devices are specifically designed for 12 V battery anti-reverse protection, delivering superior performance compared to traditional symmetrical bi-directional TVS solutions. Unlike conventional approaches that often require multiple components, the TPSMB Asymmetrical Series provides a single-component solution that protects anti-reverse MOSFETs, diodes, and DC/DC converter ICs from both positive and negative surges. The asymmetrical clamping capability ensures much lower clamping voltage from negative surges, allowing engineers to select lower-rated MOSFETs or diodes. This approach reduces conduction losses, simplifies design, and lowers overall BOM costs. It provides asymmetrical protection with low positive clamping (24–30 V) and low negative clamping (12–18 V). A single device integrated in a DO-214AA surface-mount package replaces multiple Zeners/TVS diodes, while the peak pulse power is 600 W with a response time of less than 1 ns and up to 30 kV ESD dissipation. The devices are automotive-qualified according to AEC-Q101 and operate with a junction temperature range of -65 °C to 175 °C.09.12.2025 08:30:00Decnews_2026-01-01_10.jpg\images\news_2026-01-01_10.jpghttps://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/tpsmb-asymmetrical-tvs-diodes-cut-conduction-loss-and-bom-cost-in-12v-battery-systemslittelfuse.com
Power Partnership for in-orbit AI ProcessingVicor has partnered with Spacechips, developer of ...12653Industry NewsPower Partnership for in-orbit AI ProcessingVicor has partnered with Spacechips, developer of space-electronics solutions for satellites and spacecraft, to design power-dense, reliable transponders for in-orbit AI processing. Spacechips’ AI1 transponder is radiation-tolerant, rugged and compact featuring Vicor’s FPA power modules (Factorized Power Architecture). The demand for smaller satellites with sophisticated computational capabilities and reliable and robust onboard processor systems to support the 5 to 10 year duration of a mission, is pushing the limits of the latest ultra deep submicron FPGAs and ASICs and their power delivery networks. These high-performance processors have demanding, low-voltage, high-current power requirements and their system design is further compounded by the complexities of managing thermal and radiation conditions in space. In response, Spacechips has introduced its AI1 transponder, a small, on-board processor card containing an ACAP (Adaptive Compute Acceleration Platform) AI accelerator. The smart, re-configurable receiver and transmitter delivers up to 133 tera operations per second (TOPS) of performance that enables new Earth-observation, in-space servicing, assembly and manufacturing (ISAM), signals intelligence (SIGINT), and intelligence, surveillance and reconnaissance (ISR) and telecommunication applications to support real-time, autonomous computing while ensuring the reliability and longevity to complete longer missions. FPA is a power delivery system design that separates the functions of DC/DC conversion into independent modules. In Vicor’s radiation tolerant modules, the bus converter module (BCM) provides the isolation and step down to 28 V, while the pre-regulator module (PRM) provides regulation to a voltage transformation module (VTM) or current multiplier that performs the 28 V DC transformation to 0.8 V.09.12.2025 07:00:00Decnews_2025-12-15_2.jpg\images\news_2025-12-15_2.jpghttps://www.vicorpower.com/press-room/spacechips-drives-imaginative-new-ai-enabled-satellite-applicationsvicorpower.com
Silicon Valley Headquarters and Munich R&D Office openedEmpower Semiconductor announced an expansion of it...12652Industry NewsSilicon Valley Headquarters and Munich R&D Office openedEmpower Semiconductor announced an expansion of its global operations with the opening of its headquarters in Milpitas, California, and the establishment of a dedicated research and development (R&D) center in Munich, Germany. These strategic investments follow the company’s series D financing round. The expanded Milpitas space is purpose-built to support rapid development of Empower’s next-generation vertical power-delivery platforms and derivatives. The Munich site serves as a regional innovation hub.09.12.2025 06:00:00Decnews_2025-12-15_1.JPG\images\news_2025-12-15_1.JPGhttps://www.empowersemi.com/empower-semiconductor-expands-global-footprint-with-new-silicon-valley-headquarters-and-munich-rd-office/empowersemi.com
GaN Communications Manager appointedAs of January 1, 2026 Maurizio Di Paolo Emilio wil...12656PeopleGaN Communications Manager appointedAs of January 1, 2026 Maurizio Di Paolo Emilio will become Director of Global Marketing Communications of EPC – Efficient Power Conversions. Maurizio holds a Ph.D in physics and is a content editor & technical writer, who has put specific focus on power electronics, wide bandgap semiconductors, renewable energy as well as space electronics. He decided to take this career step in order to be "at the forefront of the transition from silicon to the GaN era". He thinks that the rise of GaN is not just a simple technological upgrade but a fundamental change with profound impact on the world of AI (Artificial Intelligence) including scalability, sustainability, and ethics. Maurizio aims "to craft a communication strategy that blends technical storytelling with technological innovation, helping designers and product teams navigate complex technologies".08.12.2025 10:00:00Decnews_2025-12-15_5.jpg\images\news_2025-12-15_5.jpghttps://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3250/epc-appoints-maurizio-di-paolo-emilio-as-director-of-global-marketing-communicationsepc-co.com
Strategic Partnership to accelerate GaN Adoption in IndiaNavitas Semiconductor and Cyient Semiconductors, a...12654Industry NewsStrategic Partnership to accelerate GaN Adoption in IndiaNavitas Semiconductor and Cyient Semiconductors, a provider of ASIC, ASSP and power solutions, have announced a strategic long-term partnership intended to advance the adoption of GaN technology in India and establish a complete, end-to-end GaN ecosystem. Through this partnership, Navitas Semiconductor and Cyient Semiconductors intend to co-develop GaN products, digital and mixed signal ICs, GaN based system modules and design enablement platforms targeting India’s high voltage, high power market segments such as AI data centers, electric mobility, performance computing, energy grid infrastructure and industrial electrification. The partnership seeks to build a robust local supply chain and manufacturing ecosystem in support of the Indian Government’s "Make in India" initiative. In addition, through this partnership Navitas and Cyient Semiconductor aim to deploy IC technology in accelerating solution development for high voltage and high-power markets. This is expected to include products based on Navitas’ existing GaN technologies, along with new products tailored for India’s unique market needs. This initiative is intended to empower Indian design houses and OEMs with locally sourced GaN components and manufacturing support, enabling faster development cycles and reducing barriers to GaN adoption in India.08.12.2025 08:00:00Decnews_2025-12-15_3.jpg\images\news_2025-12-15_3.jpghttps://navitassemi.com/navitas-cyient-semiconductors-enter-into-a-strategic-partnership-to-accelerate-gan-adoption-in-indias-ai-mobility-industrial-and-energy-markets/navitassemi.com
Foundry Service for SiC MOSFETsThrough its XbloX platform, the analog/mixed-signa...12655Industry NewsFoundry Service for SiC MOSFETsThrough its XbloX platform, the analog/mixed-signal and specialty foundry X-FAB is offering direct access to a standardized yet flexible set of SiC process technologies that accelerate the development of advanced power devices. From rapid prototyping to full production, the modular and fully scalable XbloX platform helps SiC device developers to expedite engineering assessments and technology release, with production starts that are claimed to be up to nine months faster than traditional methods. The standardized module configuration of the XbloX WBG discrete foundry model imparts two major benefits for those designing or refining advanced SiC devices. Firstly, X-FAB takes on process development activities with the introduction of a Process Installation Kit (PIK), where design and implant recipes provide the key differentiators. Secondly, the use of XbloX takes care that wafer manufacturing at X-FAB becomes a highly scalable activity in line with application requirements, differing considerably from the less scalable production provided by a traditional foundry model for customer-specific SiC technologies. The planning phase, for example, is claimed to be up to six times shorter than that required by conventional approaches.04.12.2025 09:00:00Decnews_2025-12-15_4.jpg\images\news_2025-12-15_4.jpghttps://www.xfab.com/news/details/article/x-fab-xblox-accelerates-time-to-market-for-scalable-high-performance-sic-mosfet-solutionsxfab.com
SiC MOSFETs in TOLL packageROHM has begun mass production of the SCT40xxDLL s...12659Product ReleaseSiC MOSFETs in TOLL packageROHM has begun mass production of the SCT40xxDLL series of SiC MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, these packages offer approximately 39 % improved thermal performance. This enables high-power handling despite their compact size and low profile. It is suited for industrial equipment such as server power supplies and ESS (Energy Storage Systems) where the power density is increasing, and low-profile components are required to enable miniaturized product design. The thickness of the devices is 2.3mm thickness – roughly half that of conventional packaged products. Furthermore, while most standard TOLL package products are limited by a drain-source rated voltage of 650 V, these products support up to 750 V. This allows for lower gate resistance and increased safety margin for surge voltages, contributing to reduced switching losses. The lineup consists of six models with on-resistance ranging from 13 m&#8486; to 65 m&#8486;.04.12.2025 07:30:00Decnews_2025-12-15_8.jpg\images\news_2025-12-15_8.jpghttps://www.rohm.com/news-detail?news-title=2025-12-04_news_sic-mosfet&defaultGroupId=falserohm.com
Film Capacitors for the Mains InputWürth Elektronik introduced a series of WCAP-FTY2 ...12665Product ReleaseFilm Capacitors for the Mains InputWürth Elektronik introduced a series of WCAP-FTY2 film capacitors which is optimized for use in mains noise suppression and complies with X1 or Y2 safety classes in accordance with IEC 60384-14. The high impulse dielectric strength compared to X2 capacitors, along with other product-specific parameters, is confirmed by VDE with ENEC10 certification. The company’s WCAP-FTY2 series film capacitors are interference suppression capacitors for use as X1 or Y2 capacitors. When used as an X1 capacitor, it is placed between the phase (L) and neutral conductor (N). In a Y2 application, the capacitor is placed between the phase (L) and ground (PE) or between the neutral conductor and ground. As metallized film capacitors, the components are designed to be self-healing, making them particularly fail-safe. Their primary use is as mains filters in household appliances and interference suppression in industrial applications, such as inverters and motor control systems.03.12.2025 13:30:00Decnews_2025-12-15_14.jpg\images\news_2025-12-15_14.jpghttps://www.we-online.com/en/news-center/press?instance_ID=5506&d=wcap-fty2we-online.com
Foil Resistor Series for High-Precision, High-Power ApplicationsBourns released four Riedon&trade; Foil Resistor S...12667Product ReleaseFoil Resistor Series for High-Precision, High-Power ApplicationsBourns released four Riedon&trade; Foil Resistor Series. The FPM Series, FPV Series, FWP2324 Series and FPY Series are designed for high-precision, high-power applications. The foil resistors can achieve up to 1 ppm/°C and &plusmn;0.005 percent TCR and minimal long-term drift. They are constructed with a metal foil resistive element mounted on a ceramic substrate that provides good heat conductivity. The devices are suited for a variety of current sense, industrial, consumer and telecommunications applications as well as for test and measurement equipment, renewable energy and power conversion systems and industrial automation platforms, where consistent accuracy, stable performance over varying conditions and long-term reliability are essential. While the FWP2324 Series is integrated in a 4-pin rectangular package, the FPY Series uses a 2-pin rectangular package, and the FPM and FPV Series are housed in a 4-pin package with an isolated backplate.02.12.2025 15:30:00Decnews_2025-12-15_16.jpg\images\news_2025-12-15_16.jpghttps://www.bourns.com/news/press-releases/pr/2025/12/02/bourns-announces-four-foil-resistor-series-in-various-package-options-to-match-application-specific-requirementsbourns.com
MLCCs in compact 3225M for rated Voltages of 1.25 kVMurata started mass production of its multilayer c...12666Product ReleaseMLCCs in compact 3225M for rated Voltages of 1.25 kVMurata started mass production of its multilayer ceramic capacitor (MLCC) featuring a capacitance of 15 nF, a rated voltage of 1.25 kV, and C0G characteristics in the compact 3225M (3.2 mm x 2.5 mm / 1210-inch) size. This product is suitable for onboard chargers (OBCs) in electric vehicles (EVs) and power supply circuits in high-performance consumer devices. The MLCCs are designed for an operating temperature range from -55 °C to +125 °C, while the capacitance range spans from 4.7 nF to 15 nF, with a tolerance of &plusmn;1 % to &plusmn;5 %.02.12.2025 14:30:00Decnews_2025-12-15_15.jpg\images\news_2025-12-15_15.jpghttps://www.murata.com/en-eu/news/capacitor/ceramiccapacitor/2025/1202murata.com
MOSFET for 48 V Hot Swap Applications in AI ServersAlpha and Omega Semiconductor announced its AOLV66...12660Product ReleaseMOSFET for 48 V Hot Swap Applications in AI ServersAlpha and Omega Semiconductor announced its AOLV66935, a 100 V High Safe Operating Area (SOA) MOSFET in an LFPAK 8x8 package. This MOSFET is designed as a solution for 48 V Hot Swap architectures in AI servers. The AOLV66935 utilizes AOS’ 100 V AlphaSGT&trade; proprietary MOSFET technology that combines the advantages of trench technology for low on-resistance with high SOA capability. AOS has tested and characterized the SOA at 25 °C as well at higher operating conditions of 125 °C giving system architects the confidence that the device will operate reliably under harsh conditions. The MOSFET’s LFPAK 8x8 gull-wing constructed package is 60 percent smaller compared to the TO-263 (D2PAK) package. The R<sub>DS(on)</sub> is specified with 1.86 m&#8486; at V<sub>GS</sub> = 10 V.02.12.2025 08:30:00Decnews_2025-12-15_9.jpg\images\news_2025-12-15_9.jpghttps://www.aosmd.com/news/alpha-and-omega-semiconductor-enables-48v-hot-swap-ai-servers-new-high-soa-mosfet-lfpak-8x8aosmd.com
High Voltage IGBT ModulesMitsubishi Electric Corporation launched standard-...12675Product ReleaseHigh Voltage IGBT ModulesMitsubishi Electric Corporation launched standard-isolation (6.0 kV<sub>rms</sub>) and high-isolation (10.2 kV<sub>rms</sub>) modules in its 4.5 kV/1,200 A XB Series of high-voltage IGBTs. These power semiconductors achieve high moisture resistance for more efficient and reliable inverters used in large industrial equipment, such as railcars, operating in diverse environments including outdoors. These modules (Dimensions 140 x 190 x 38 mm&sup3;) use IGBT elements that incorporate Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT1) structure. Specific structures for electric field relaxation and surface charge control enabled Mitsubishi Electric to reduce the chip’s termination region size by about 30 % while also achieving about 20 times greater moisture resistance than existing products. In addition, the module reduces total switching loss by approximately 5 % compared to previous models, and reverse-recovery safe-operating area (RRSOA) tolerance is about 2.5 times greater than that of compared to previous models. By maintaining the same external dimensions as existing products for easy replacement, the module simplifies and shortens the process of designing new inverters.02.12.2025 06:30:00Decnews_2026-01-01_8.jpg\images\news_2026-01-01_8.jpghttps://www.mitsubishielectric.com/en/pr/2025/1202/mitsubishielectric.com
3300 V and 2300 V Silicon Carbide DevicesNavitas Semiconductor announced the sample availab...12663Product Release3300 V and 2300 V Silicon Carbide DevicesNavitas Semiconductor announced the sample availability of its 3300 V and 2300 V ultra-high voltage (UHV) products in power module, discrete and known good die (KGD) formats. These SiC products are based on Navitas’ fourth-generation GeneSiC&trade; platform which uses a TAP architecture to implement a multi-step e-field management profile. SiCPAK&trade; G+ power module packages are used for both, half-bridge and full-bridge circuit configurations. Key features of the SiCPAK&trade; G+ power modules also include an AlN DBC substrate for effective heat dissipation and high-current press-fit pins that double the current-carrying capability per pin. Discrete SiC MOSFETs are available in the industry standard TO-247 and TO-263-7 packages. The SiC products are qualified above and beyond the existing AEC-Q101 and JEDEC product qualification standards. Another option is KGD (known good dies), which gives system manufacturers greater flexibility in building custom SiC power modules.01.12.2025 11:30:00Decnews_2025-12-15_12.jpg\images\news_2025-12-15_12.jpghttps://navitassemi.com/navitas-announces-3300v-and-2300v-uhv-silicon-carbide-product-portfolio-augmenting-reliability-and-performance-in-mission-critical-energy-infrastructure-applications/navitassemi.com
Snubber for SiC Power ModuleMelexis announced the MLX91299, a silicon-based RC...12661Product ReleaseSnubber for SiC Power ModuleMelexis announced the MLX91299, a silicon-based RC snubber designed to enhance the performance of silicon carbide power modules. It supports automotive and industrial high-voltage power applications and helps engineers mitigate voltage spikes and oscillations to improve system reliability and efficiency. This RC snubber is a silicon-based protective device integrating both a resistor and a capacitor, providing high-voltage transient protection in a compact form. Designed for seamless assembly within high-voltage power modules, it follows standard integration approaches compatible with SiC devices. Its material and form factor enable direct integration with existing power module layouts. With a breakdown voltage of Melexis announced the MLX91299, a silicon-based RC snubber designed to enhance the performance of silicon carbide power modules. It supports automotive and industrial high-voltage power applications and helps engineers mitigate voltage spikes and oscillations to improve system reliability and efficiency. This RC snubber is a silicon-based protective device integrating both a resistor and a capacitor, providing high-voltage transient protection in a compact form. Designed for seamless assembly within high-voltage power modules, it follows standard integration approaches compatible with SiC devices. Its material and form factor enable direct integration with existing power module layouts. With a breakdown voltage of >1,500 V, it is suitable for traction inverters, onboard chargers, DCDC converters, and other high-voltage automotive and industrial applications. 1,500 V, it is suitable for traction inverters, onboard chargers, DCDC converters, and other high-voltage automotive and industrial applications.27.11.2025 09:30:00Novnews_2025-12-15_10.png\images\news_2025-12-15_10.pnghttps://www.melexis.com/en/news/2025/27nov2025-game-changer-for-sic-power-modulemelexis.com
200 V MOSFET switches 480 ALittelfuse released the MMIX1T500N20X4 X4-Class Ul...12662Product Release200 V MOSFET switches 480 ALittelfuse released the MMIX1T500N20X4 X4-Class Ultra-Junction Power MOSFET. This 200 V, 480 A N-channel MOSFET features a low on-state resistance of 1.99 m&#8486;, enabling higher conduction efficiency, simplified thermal management, and improved system reliability in power-dense designs. The device utilizes a ceramic-based, isolated SMPD-X package with topside cooling for improved thermal management, a thermal resistance R<sub>th(j-c)</sub> of 0.14 °C/W and 2500 V isolation. Compared with existing state-of-the-art X4-Class MOSFET solutions, the device is said to offer up to 2&times; higher current ratings and as much as 63 % lower R<sub>DS(on)</sub>, enabling engineers to consolidate multiple paralleled low-current devices into a single high-current solution. The gate charge Q<sub>g</sub> is specified with 535 nC. Typical applications are DC load switches, battery energy storage systems, industrial and process power supplies, industrial charging infrastructure as well as drones and vertical take-off and landing (VTOL) platforms.25.11.2025 10:30:00Novnews_2025-12-15_11.png\images\news_2025-12-15_11.pnghttps://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/littelfuse-expands-x4-class-portfolio-with-200-v-480-a-ultra-junction-mosfet-in-smpd-x-packagelittelfuse.com
One-Millionth Ideal Switch shippedMenlo Microsystems has announced the shipment of i...12624Industry NewsOne-Millionth Ideal Switch shippedMenlo Microsystems has announced the shipment of its one-millionth Ideal Switch&reg;. Unlike traditional switching technologies, the Ideal Switch delivers high performance without compromising between size, weight, efficiency, and reliability. This capability allows OEMs to design smaller, lighter, faster, and more energy-efficient systems that can be readily scaled, offering new solutions to tackling the limitations of switching technologies. The key high-growth markets adopting Ideal Switch technology include Test & Measurement (Menlo already supports 14 of the top 20 semiconductor manufacturers), Aerospace & Defense and Power Switching. The adoption of the Ideal Switch across these markets reflects its growing role in addressing system-level bottlenecks caused by the limitations of traditional mechanical and semiconductor-based switches.20.11.2025 09:00:00Novnews_2025-12-01_4.jpg\images\news_2025-12-01_4.jpghttps://menlomicro.com/newsroom/menlo-micro-hits-one-millionth-ideal-switch-shipment-setting-new-standard-for-switch-technologymenlomicro.com
Registration is now open for pre-APEC 2026 WorkshopsPSMA has opened registration for both the PSMA Cap...12623Event NewsRegistration is now open for pre-APEC 2026 WorkshopsPSMA has opened registration for both the PSMA Capacitor Workshop and the Power Magnetics @ High Frequency Workshop to be held on Saturday, March 21 in San Antonio, TX prior to the start of APEC 2026. The PSMA Capacitor Workshop returns to APEC after a four year hiatus. The PSMA Capacitor Committee has put together an agenda and is looking to relaunch this workshop series. The PSMA Power Magnetics @ High Frequency Workshop returns for the 11th consecutive year and is looking forward to starting a second decade of delivering valuable information to the community. Both workshops will share a demo/exhibitor area that will also be home for the workshop lunches and networking hour. Space for both workshops is limited. Early bird registration for both workshops runs until January 30th, 2026.20.11.2025 08:00:00Novnews_2025-12-01_3.png\images\news_2025-12-01_3.pnghttps://psma.com/technical-forums/magnetics/workshoppsma.com
Technology and Foundry Partnership for GaNGlobalFoundries (GF) and Navitas Semiconductor ann...12622Industry NewsTechnology and Foundry Partnership for GaNGlobalFoundries (GF) and Navitas Semiconductor announced a long-term strategic partnership to strengthen and accelerate U.S.-based gallium nitride technology, design and manufacturing. Together, the companies will collaborate, develop and deliver solutions for critical applications in high power markets that demand the highest efficiency and power density, including AI datacenters, performance computing, energy and grid infrastructure and industrial electrification. Through this long-term partnership, GF and Navitas Semiconductor will manufacture next-generation GaN technology at GF’s Burlington, Vermont (USA) facility, leveraging the site’s expertise in high-voltage GaN-on-Silicon technology and Navitas Semiconductor’s GaN technology and device expertise. Development is set for early 2026 with production expected to begin later in the year. By combining GF’s manufacturing capabilities and Navitas’ GaN capabilities, this strategic partnership is expected to "provide customers with the most advanced, secure and scalable GaN solutions".20.11.2025 07:00:00Novnews_2025-12-01_2.jpg\images\news_2025-12-01_2.jpghttps://navitassemi.com/globalfoundries-and-navitas-semiconductor-partner-to-accelerate-u-s-gan-technology-and-manufacturing-for-ai-datacenters-and-critical-power-applications/navitassemi.com
Gap Filler Gel for Thermal ManagementThe Chomerics Division of Parker Hannifin Corporat...12664Product ReleaseGap Filler Gel for Thermal ManagementThe Chomerics Division of Parker Hannifin Corporation introduced THERM-A-GAP&trade; GEL 120, a one-component, dispensable, thermal interface material with a high thermal conductivity performance. The 12.0 W/m-K thermal conductivity of this product can overcome challenging heat dissipation issues and provide greater design. The special formulation of this gel reduces thermal junction temperatures and conducts heat away from heat-generating electronic components. As a filler material it is suited for use in air gaps of various thicknesses created by assembly and manufacturing tolerances or rough surfaces, from less than 0.5 mm up to 4 mm. Such gaps are common between components or PCBs and heat sinks, metal enclosures and chassis. As a one-component, fully cured material which is suited to operate in temperatures from -50 °C to +200 °C, THERM-A-GAP GEL 120 does not require any secondary curing or additional processes to achieve its specified physical or thermal properties. Its dielectric strength is 5 kVac/mm (ASTM D149 test method), the volume resistivity is 1013 &#8486;cm (ASTM D257) with a dielectric constant of 5.7 at 1,000 kHz/2 mm thick (ASTM D150); and 0.013 dissipation factor at 1,000 kHz/2 mm thick (Chomerics test method).19.11.2025 12:30:00Novnews_2025-12-15_13.jpg\images\news_2025-12-15_13.jpghttps://ph.parker.com/gb/en/product-list/therm-a-gap-gel-120-thermally-conductive-gelph.parker.com
Joining Forces for Data Center Power SolutionsDelta and Siemens Smart Infrastructure have formal...12625Industry NewsJoining Forces for Data Center Power SolutionsDelta and Siemens Smart Infrastructure have formalized a global partnership to deliver prefabricated, modular power solutions designed to accelerate the deployment of data center infrastructure, while significantly reducing CAPEX. The partnership is expected to "ensure hyperscale and colocation operators enjoy a strategic advantage in the competitive AI and cloud computing data center market, with the highest performance in power management and reliability". The core of the agreement centers on the delivery of prefabricated, integrated containerized power solutions (SKIDs, eHouses). By prefabricating and pre-testing these modular power systems off-site with an optimized layout, the solution provides a standardized, plug-and-play approach that is said to reduce time-to-market by up to 50 %, to lower construction risk, and to maximize valuable data center square footage. The efficient design can provide up to 20 % CAPEX reduction and up to 27 % lower carbon emissions by using less concrete in the space-optimized layout.19.11.2025 10:00:00Novnews_2025-12-01_5.jpg\images\news_2025-12-01_5.jpghttps://www.delta-emea.com/en-gb/news/delta-and-siemens-to-complement-their-power-solutions-to-help-customers-cut-data-center-deployment-time,-costs,-and-carbon-emissionsdelta-emea.com
Multi-Purpose R& Dual-Channel Power SupplyDelivering precise DC power up to 3.6 kW, the R&S ...12636Product ReleaseMulti-Purpose R& Dual-Channel Power SupplyDelivering precise DC power up to 3.6 kW, the R&S NGT3600 DC power supply series from Rohde & Schwarz (R&S) is a multi-purpose solution for applications across all stages of R&D, quality assurance and production. The dual-channel R&S NGT3622 model, which offers up to 1800 W per channel, is suited for a variety of test and measurement tasks, including power system testing, DC/DC converter evaluation and the simulation of voltage profiles in accordance with test standards. It provides adjustable output voltages of up to 80 V. The two channels of the R&S NGT3622 model can be combined in series or parallel, allowing users to double either the voltage or the current. For applications requiring even more power, up to three units can be connected, delivering up to 480 V or 300 A across six channels. With a resolution of 100 &micro;A for current and 1 mV for voltage, the instruments offer precise measurements needed for a wide range of applications. Thus, it is suited for measurement and testing tasks in various industries, including power electronics, mobile and satellite communications, renewable energies, automotive, aerospace & defense, among others. All models in the R&S NGT3600 DC power supply series are directly rack-mountable – no adapter is required.18.11.2025 15:30:00Novnews_2025-12-01_16.jpg\images\news_2025-12-01_16.jpghttps://www.rohde-schwarz.com/uk/about/news-press/all-news/rohde-schwarz-presents-multi-purpose-r-s-ngt3600-high-precision-dual-channel-power-supply-at-productronica-press-release-detailpage_229356-1593932.html?change_c=truerohde-schwarz.com
1200 V SiC Six-Pack Power Modules for E-Mobility Propulsion SystemsWolfspeed announced its 1200 V SiC six-pack power ...12628Product Release1200 V SiC Six-Pack Power Modules for E-Mobility Propulsion SystemsWolfspeed announced its 1200 V SiC six-pack power modules that "redefine performance benchmarks for high-power inverters". By combining its Gen 4 SiC MOSFET technology and packaging, Wolfspeed’s modules are claimed to "deliver three times more power cycling capability at operating temperature than competing solutions, and 15% higher inverter current capability in an industry-standard footprint". In terms of packaging the new modules incorporate e. g. sintered die attach, epoxy encapsulant material, and copper clip interconnects. The company claims that this enables "3X more power cycles than best-in-class competitor devices in the same footprint". The modules achieve a 22 % R<sub>DS(ON)</sub> improvement at 125 °C compared to the previous generation, while reducing turn-on energy (E<sub>ON</sub>) by approximately 60 % across operating temperatures. Additionally, the soft-body diode is said to enable 30 % lower switching losses and 50 % lower V<sub>DS</sub> overshoot during reverse recovery compared to previous generation. The modules’ industry-standard packaging enables seamless adoption without complex redesign, serving as a direct replacement for IGBT solutions in existing system architectures. This means that there will be no need for power terminal laser welding and complex coldplate mounting while maintaining compatibility with traditional power ecosystems including capacitors, cooling solutions, gate drivers, and current sensors.17.11.2025 07:30:00Novnews_2025-12-01_8.png\images\news_2025-12-01_8.pnghttps://www.wolfspeed.com/company/news-events/news/wolfspeed-launches-1200v-silicon-carbide-six-pack-power-modules-enabling-a-new-standard-of-performance-for-e-mobility-propulsion-systems/wolfspeed.com
Test System for Megawatt ChargingVector has introduced the hardware-in-the-loop (HI...12635Product ReleaseTest System for Megawatt ChargingVector has introduced the hardware-in-the-loop (HIL) test system vCTS.performance, which was developed in collaboration with EA Elektro-Automatik for testing the charging communication between electric vehicles (EV) and supply equipment (EVSE). It meets the demanding power requirements of the Megawatt Charging System (MCS), while also supporting the major charging standards CCS, MCS, NACS, GB/T and CHAdeMO. The system is now available. The vCTS.performance is a comprehensive HIL test system to ensure conformity and interoperability in charging communication between EVs and EVSEs. With scalable DC charging power of up to 3.84 MW in 60 kW increments, the system supports realistic load and endurance testing under real-world conditions. This ensures that both EVs and EVSEs meet the charging communication standards and function reliably. The system operates energy-efficient by implementing regenerative charging with energy feedback to the grid at an efficiency of over 96 %. It is optimized for running the CANoe Test Package EV and EVSE, including integration into the vTESTstudio workflow.12.11.2025 14:30:00Novnews_2025-12-01_15.jpg\images\news_2025-12-01_15.jpghttps://www.vector.com/int/en/products/products-a-z/hardware/vcts-performance/#c398984vector.com
E-Fuse automotive Smart Switch for Protection, Power Saving and Functional SafetyAn addition to the STi2Fuse family, the VNF1248F a...12634Product ReleaseE-Fuse automotive Smart Switch for Protection, Power Saving and Functional SafetyAn addition to the STi2Fuse family, the VNF1248F automotive e-fuse MOSFET controller from STMicroelectronics reacts within 100 &micro;s, which is faster than a conventional wire fuse and ensures flexible and robust protection to avoid fault propagation inside the vehicle. The VNF1248F integrates the capacitive charging mode (CCM) functionality to ensure proper driving of large capacitive loads with high inrush current. In addition, a Standby-ON mode with current capability up to 600 mA and current consumption lower than 75 &micro;A enhances the vehicle’s efficiency when in park mode. An optional external supply pin for logic reduces power consumption by 0.4 W in 48 V systems and battery-undervoltage shutdown compatible with the automotive LV124 standard ensures system stability. The chip facilitates reaching high safety-integrity levels (ASIL) in ISO 26262 functional-safety applications thanks comprehensive dedicated features like advanced fault detection and reaction, fail-safe mode and limp-home mode. There are also built-in self tests for automatic diagnosis and a dedicated pin for direct hardware control of the external MOSFET gate in case of a microcontroller fault. The VNF1248F is suitable for 12 V, 24 V, and 48 V boardnets. Other uses include as an ECU main switch and active supply for always-on circuitry in parking mode. The associated EV-VNF1248F evaluation board, simplifies integration of the intelligent fuse protection into prototype circuitry. A software package, STSW-EV-VNF1248F, is also available.12.11.2025 13:30:00Novnews_2025-12-01_14.jpg\images\news_2025-12-01_14.jpghttps://community.st.com/t5/developer-news/new-e-fuse-automotive-smart-switch-for-protection-power-saving/ba-p/855500st.com
1,200 V Automotive-Grade Low-Loss DiodesTaiwan Semiconductors introduced a series of autom...12618Product Release1,200 V Automotive-Grade Low-Loss DiodesTaiwan Semiconductors introduced a series of automotive-grade, low-loss diodes offered in industry-standard packages. The 1,200 V PLA/PLD series, with ratings of 15 A, 30 A or 60 A, all feature maximum forward voltages of 1.3 V, a reverse leakage of less than 10 &micro;A at 25 °C and junction temperatures of up to 175 °C. Available in three popular packages (ThinDPAK, D2PAK-D and TO-247BD), the 1,200V diodes enable easy drop-in replacement to improve efficiency in existing designs. Applications include three-phase AC/DC converters, server and computing power systems, EV charging stations, on-board battery chargers, Vienna rectifiers, totem pole and bridgeless topologies, inverters and UPS systems, and general-purpose rectification in high-power systems of various types.12.11.2025 13:30:00Novnews_2025-11-15_15.jpg\images\news_2025-11-15_15.jpghttps://www.taiwansemi.com/en/1200v-low-loss-diode/taiwansemi.com
"Innovation Award" & "Young Engineer Award"The Semikron Danfoss Innovation Award and the Semi...12626Industry News"Innovation Award" & "Young Engineer Award"The Semikron Danfoss Innovation Award and the Semikron Danfoss Young Engineer Award are given for outstanding innovations in projects, prototypes, services or novel concepts in the field of power electronics in Europe, combined with notable societal benefits in form of supporting environmental protection and sustainability by improving energy efficiency and conservation of resources. Both prizes have been initiated by the SEMIKRON Foundation in 2012. The prizes are awarded in cooperation with the European ECPE Network. The deadline for submission ends on 17 January 2026! Please send your proposal resp. your application with the reference ‘Semikron Danfoss Innovation Award’ by email to Thomas Harder, General Manager of ECPE e.V., thomas.harder@ecpe.org. The receipt of your proposal will be confirmed by email in due time.11.11.2025 11:00:00Novnews_2025-12-01_6.jpg\images\news_2025-12-01_6.jpghttps://www.ecpe.org/index.php?eID=dumpFile&t=f&f=48382&token=e0e0cccf0ed984ef54db3627004979b936a33b40ecpe.org
High Current Four Terminal Shunt Resistors for AI Data Server PowerStackpole Electronics’ HCSK1216 high current four ...12631Product ReleaseHigh Current Four Terminal Shunt Resistors for AI Data Server PowerStackpole Electronics’ HCSK1216 high current four terminal shunt resistor is engineered "to deliver exceptional accuracy and efficiency in current sensing applications". The HCSK1216’s four-terminal design separates supply current and voltage sensing paths, minimizing power loss and eliminating lead resistance errors. This all-metal component combines high power handling with ultra-low resistance values, making it suitable for precision current measurement. With a footprint that occupies 75 % less space than traditional 2725-size components, the HCSK1216 is targeted for applications where power density and board space are critical. AI data servers are a prime example of environments that benefit from this advanced solution. Available in 0.3, 0.5, 1, and 2 m&#8486; resistance values, the HCSK1216 offers tolerances as low as 1 % and a temperature coefficient of resistance (TCR) of 50 ppm.11.11.2025 10:30:00Novnews_2025-12-01_11.png\images\news_2025-12-01_11.pnghttps://www.seielect.com/catalog/SEI-HCSK.pdfseielect.com
Modular, scalable DC Power System Monitoring and ControlOmniOn Power&trade; is helping to redefine the rol...12627Product ReleaseModular, scalable DC Power System Monitoring and ControlOmniOn Power&trade; is helping to redefine the role of the DC power system controller with its next-generation Pulsar 200 platform. Purpose-built for tomorrow’s connected power infrastructure, the controller unifies modular hardware, edge intelligence, and zero-trust security into a cohesive, patent-pending platform. This combination of features helps operators evolve from basic system control to intelligent and adaptive power management. From small remote sites to large centralized facilities, the Pulsar 200 scales across telecom, data center, and industrial applications, helping to The Pulsar 200 controller provides a modular, building-block-style hardware design: Hot-swappable modules connect directly or via CAN bus, allowing upgrades to be performed with negligible disruption to operations. Zero-trust security according to IEC 62443-4-2 and FIPS 140-3 is already built in – complemented by Secure Boot, hardware-backed encryption, EdgeLock&reg; protection, and role-based access control. Dual Gigabit WAN, Wi-Fi, Bluetooth, and optional 4G/5G enable redundancy and secure site access from most locations. An optional integrated remote monitoring aggregates data from HVAC, generators, automatic transfer switches, meters, sensors, and more than 100 supported devices into one unified interface, reducing hardware clutter, service visits, and troubleshooting time. A 5-inch color touchscreen with guided setup, live schematics, and performance dashboards simplifies deployment and ongoing site management. The Pulsar 200 is available in both new system installations and as a retrofit upgrade kit, enabling customers to modernize installed bases of Infinity-M, Infinity-S, and BPS power systems without replacing existing wiring.11.11.2025 06:30:00Novnews_2025-12-01_7.png\images\news_2025-12-01_7.pnghttps://www.omnionpower.com/about/news/press-releases/omnion-power-provides-modular-scalable-dc-power-system-monitoring-and-control-with-new-pulsar-200-controlleromnionpower.com
1200 V Gen3 SiC MOSFET Modules in SOT-227SemiQ has expanded its family of 1200 V Gen3 SiC M...12633Product Release1200 V Gen3 SiC MOSFET Modules in SOT-227SemiQ has expanded its family of 1200 V Gen3 SiC MOSFETs, launching five SOT-227 modules that offer R<sub>DS(on)</sub> values of 7.4, 14.5, and 34 m&#8486;. SemiQ’s GCMS modules, which feature Schottky Barrier Diodes (SBDs), are claimed to have "lower switching losses at high temperature, especially compared to non-SBDs GCMX modules". The devices target medium-voltage, high-power conversion applications, including battery chargers, photovoltaic inverters, server power supplies, and energy storage systems. All parts are screened using wafer-level gate-oxide burn-in tests exceeding 1400 V and are avalanche tested to 800 mJ (330 mJ for 34 m&#8486; modules). All modules feature an isolated backplate as well as direct mounts for a heat sink. The 7.4 m&#8486; GCMX007C120S1-E1 reduces switching losses to 4.66 mJ (3.72 mJ Turn on, 0.94 mJ Turn off) and has a body diode reverse recovery charge of 593 nC. Their junction-to-case thermal resistance ranges from 0.23°C/W for the 7.4 m&#8486; MOSFET module to 0.70 °C/W for the 34 m&#8486; MOSFET module.10.11.2025 12:30:00Novnews_2025-12-01_13.jpg\images\news_2025-12-01_13.jpghttps://semiq.com/semiq-expands-1200-v-gen3-sic-mosfet-line-with-launch-of-7-4-14-5-and-34-m%cf%89-sot-227-modules/semiq.com
GaN Technology Licensed to Accelerate U.S.-Manufactured Power PortfolioGlobalFoundries (GF) announced that it has entered...12605Industry NewsGaN Technology Licensed to Accelerate U.S.-Manufactured Power PortfolioGlobalFoundries (GF) announced that it has entered into a technology licensing agreement with TSMC for 650V and 80V Gallium Nitride (GaN) technology. This strategic move will accelerate GF’s next generation of GaN products for datacenter, industrial and automotive power applications and provide U.S.-based GaN capacity for a global customer base. As traditional silicon CMOS technologies hit their performance limits, GaN is emerging as the next-generation solution for meeting the increasing demand for higher efficiency, power density and compactness in power systems. GF is developing a comprehensive GaN portfolio, including high-performance 650V and 80V technologies aimed at enabling electric vehicles, datacenters, renewable energy systems and fast-charging electronics. GF’s GaN solutions are designed for harsh environments, with a holistic approach to GaN reliability that spans process development, device performance and application integration. GF will qualify the licensed GaN technology at its manufacturing facility in Burlington, Vermont, leveraging the site’s expertise in high-voltage GaN-on-Silicon technology to accelerate volume production for customers seeking next-generation power devices. Development is set for early 2026, with production to begin later in the year.10.11.2025 07:00:00Novnews_2025-11-15_2.jpg\images\news_2025-11-15_2.jpghttps://gf.com/gf-press-release/globalfoundries-licenses-gan-technology-from-tsmc-to-accelerate-u-s-manufactured-power-portfolio-for-datacenter-industrial-and-automotive-custo/gf.com
EPCIA President appointedAccording to Murata Manufacturing, Christophe Pott...12608PeopleEPCIA President appointedAccording to Murata Manufacturing, Christophe Pottier, Vice President of Sales for Murata Europe, has been appointed as President of the European Passive Components Industry Association (EPCIA), effective immediately. Mr. Pottier brings over three decades of deep experience within the electronics industry to his new role, with a strong focus on strategic sales and automotive sector initiatives. His experience at Murata, where he has contributed across multiple domains, including strategic sales in telecom and collaborative initiatives in the automotive industry, has shaped his understanding of how these components quietly power advanced technologies. As EPCIA President, Mr. Pottier’s mission is to promote a stronger, more connected passive components ecosystem across Europe by focusing on three key areas. The first area is elevating the role of passive components as these elements regulate, protect, and optimize electronic signals, making them indispensable to chip performance and system reliability. The second focal point is fostering collaboration which means working with adjacent industries to meet demands for miniaturization, high-speed data, and energy efficiency as integration into semiconductor packaging accelerates. Strengthening ties with research institutes is the third key area: Driving innovation in materials science, sustainability, and advanced manufacturing through partnerships with Europe’s academic and research institutions.07.11.2025 10:00:00Novnews_2025-11-15_5.jpg\images\news_2025-11-15_5.jpghttps://www.murata.com/en-eu/news/other/other/2025/1107murata.com
Job Promotion in Solutions for Power ElectronicsIndium Corporation has promoted Joseph Hertline to...12610PeopleJob Promotion in Solutions for Power ElectronicsIndium Corporation has promoted Joseph Hertline to Senior Product Manager, Engineered Solder Materials (ESM). In his new role, as Senior Product Manager, Hertline is now responsible for driving the growth of Indium Corporation’s global ESM initiatives through the development of marketing strategies. He will continue to lead the company’s efforts in the power electronics application segment with a broader scope of products, applications, and customer segments. He will also continue to lead ESM Application Engineering efforts for all ESM product lines. Hertline has more than a decade of experience in engineering and product management within the electronics industry and joined Indium Corporation in 2020 as Product Manager, Power Electronics.06.11.2025 12:00:00Novnews_2025-11-15_7.jpg\images\news_2025-11-15_7.jpghttps://www.indium.com/press-releases/indium-corporation-promotion-reflects-hertlines-leadership-in-advancing-innovative-soldering-solutions-for-power-electronics/indium.com
MicroModule Series expandedThe MagI&sup3;C-VDMM power module product family f...12616Product ReleaseMicroModule Series expandedThe MagI&sup3;C-VDMM power module product family from Würth Elektronik continues to grow: The three variable step-down MicroModules for input voltages from 2.5 V to 5.5 V and adjustable output voltages from 0.6 V to 4 V are available in pin-compatible 1 A, 2 A, and 3 A versions. The modules achieve a peak efficiency of up to 96 %. With a quiescent current of 4 &micro;A,they are also suitable for battery-powered applications. MagI&sup3;C-VDMM power modules represent a fully integrated DC/DC power supply that includes a switching regulator with integrated MOSFETs, as well as a controller, compensation, and a shielded inductor – all in a single package. The modules, which can replace linear regulators, are equipped with integrated protection circuits. They protect against thermal overload and electrical damage caused by overcurrent, short circuit and undervoltage. Depending on the load, they automatically switch between pulse frequency modulation (PFM) and pulse width modulation (PWM) modes. These mode transitions allows optimal efficiency and output voltage ripple at all load currents. To save energy, the power module can be set to resting mode using an additional pin. Together, the Power-GOOD and EN functions also enable power sequencing. These MagI&sup3;C-VDMM power modules measure 3.5 x 3.5 x 1.5 mm&sup3; in an LGA-9 package. The devices are suitable for point-of-load DC/DC applications, industrial and medical equipment, test and measurement devices, for powering DSPs, FPGAs, MCUs and MPUs as well as I/O interfaces. In the operating temperature range from -40 °C to 105 °C the modules comply with EN55032 (CISPR-32) Class B for radiated emissions.06.11.2025 11:30:00Novnews_2025-11-15_13.jpg\images\news_2025-11-15_13.jpghttps://www.we-online.com/en/news-center/press?instance_ID=5506&d=expansion-magi3c-vdmmwe-online.com