Bodo's News

All People Industry Event Product

Read through my personal pick of news around people, our industry, important events and interesting product releases. Or click on a filter and pick your area of interest!

German Company with lots of Presentations at APEC 2025

Learn more:
we-online.com

Event News
2025-02-11

Würth Elektronik announced its participation as an Emerald Partner at the 40th IEEE Applied Power and Electronics Conference and Exhibition (APEC). The exhibition will take place from March 17–19, 2025, at the Georgia World Congress Center in Atlanta, Georgia, with pre-show workshops held March 15–16. Celebrating its 40th anniversary, APEC has established itself as the leading conference for power electronics professionals across North America. This year's event will focus on innovation, collaboration, and advancements shaping the future of the industry. The conference begins with the 10th Annual Magnetics @ High Frequency Workshop, co-organized by PSMA and PELS, on Saturday before the exhibition, where Würth Elektronik's experts will present several insight presentations during this workshop: Throughout the APEC exhibition, Würth Elektronik will further five additional presentations. On top of this Würth Elektronik will also deliver three Exhibitor Presentations on the show floor, complemented by interactive demonstrations and technical showcases at Würth Elektronik's booth – including a photobooth for capturing memorable moments.

Pilot Line for Power and more

Learn more:
fames-pilot-line.eu

Industry News
2025-02-07

The FAMES Pilot Line offers a complete set of technologies to develop advanced chip architectures. FAMES will open new research avenues for enhancing performance and lowering power consumption for mixed-signal circuits – and strengthening European sovereignty in microelectronics, CEA-Leti reported in a recent article. The FAMES Pilot Line focuses on five sets of technologies that will enable new chip architectures, and in terms of power this technology set is about small inductors to develop DC/DC converters for power-management integrated circuits (PMIC). The other four technology sets are FD-SOI for 10nm and 7nm, eNVM (embedded non-volatile memories), RF components and 3D integration technologies for 3D stacking. FAMES will provide open access to stakeholders across Europe and partner countries. Researchers, SMEs, and industrial companies can leverage the pilot line for circuit testing, design evaluation, and new technology development. The FAMES consortium that will support the initiative includes: the pilot line coordinator, CEA-Leti (France), imec (Belgium), Fraunhofer (Germany), Tyndall (Ireland), VTT (Finland), CEZAMAT WUT (Poland), UCLouvain (Belgium), Silicon Austria Labs (Austria), SiNANO Institute (France), Grenoble INP (France) and the University of Granada (Spain).

Power Company's CEO is about to Retire

Learn more:
power.com

People
2025-02-06

Power Integrations announced that Balu Balakrishnan, the company's CEO since 2002, will retire from that role once a successor is in place. To ensure a smooth transition he will remain CEO until a successor is in the office. The company's board of directors has retained an executive search firm to assist in identifying its next CEO; both internal and external candidates will be considered. Mr. Balakrishnan, 70, intends to serve as executive chairman of the company's board for as long as is needed to ensure a smooth transition to his successor, and is expected to remain on the board of directors thereafter. Balu Balakrishnan joined Power Integrations in 1989, shortly after its formation, from National Semiconductor, where he was a product-line manager. He is the inventor of many Power Integrations products including TOPSwitch™, the company's first commercial product, followed by TinySwitch™, the first product to feature the company's EcoSmart™ technology for reducing standby-power waste. Mr. Balakrishnan served in a succession of executive roles before being named president and chief operating officer in 2001. In 2002 he was named CEO and joined the company's board of directors. He has been awarded more than 200 U.S. patents and has received numerous awards including the Discover Award for Technological Innovation in recognition of the environmental benefits of EcoSmart technology.

High-Voltage, Wide-Bandwidth Differential Probe

Learn more:
tmi.yokogawa.com

Product Release
2025-02-04

Yokogawa Test & Measurement Corporation released its PBDH0400 series differential probe with a maximum input voltage of 2000 V and a frequency bandwidth of 400 MHz. PBDH0400 series differential probes are able to deliver the measurements required for developing the next generation of higher speed power devices. Initially, two models of the PBDH0400 series will be available: the 702922 model with a maximum input voltage of 2000 V, and the 702921 with a maximum input voltage of 1000 V. The PBDH0400 series features the Yokogawa probe interface, which does not require an external power supply when connected to a Yokogawa oscilloscope. Furthermore, the probe attenuation ratio is automatically set through the interface so that measurement can start immediately after connection to the instrument. Combining the PBDH0400 with Yokogawa's 12-bit DLM5000HD or DLM3000HD oscilloscopes enables more accurate waveform measurements. Major target markets are in-vehicle electronic systems including inverters and motors as well as power electronics such as electronic devices, inverters, and power generation devices. Domestic electronic systems like household appliances and air conditioners – complemented by mechatronics, including industrial devices. The probes are suited for evaluation of high-speed, high-voltage switching signals exhibited by SiC devices and IGBTs within EV inverters as well as for power analysis and operational confirmation of SiC and GaN based power electronics.

Strategic Partnership for the North American market

Learn more:
gmw.com

Industry News
2025-01-30

The current transducers from Danisense can be sourced in the US through GMW Associates "at very short lead times". With its know-how in sensors, transducers, test & measurement, instrumentation, as well as magnetics, GMW is able to provide Danisense's products to its customer base. GMW and Danisense share a partnership that already spans over more than 10 years. GMW has been calibrating current transducers for more than fifteen years.

GaN predicted to reach Adoption Tipping Points in multiple Industries

Learn more:
infineon.com

Industry News
2025-01-30

In its 2025 predictions – GaN power semiconductors, Infineon highlights that "gallium nitride will be a game-changing semiconductor material revolutionizing the way we approach energy efficiency and decarbonization across consumer, mobility, residential solar, telecommunication, and AI data center industries". The relevance of comprehensive power systems will increase with GaN manifesting its role due to its benefits in efficiency, density, and size. Given that cost-parity with silicon is in sight, Infineon expects to see an increased adoption rate for GaN this year and beyond. Powering AI will be highly depending on GaN. By leveraging GaN, AI data centers can improve power density, which directly influences the amount of computational power that can be delivered within a given rack space. While GaN presents clear advantages, hybrid approaches combining GaN with Si and SiC are considered "ideal for meeting the requirements of AI data centers and achieving the best trade-offs between efficiency, power density and system cost". In the home appliance market, Infineon expects GaN to gain significant traction, driven by the need for higher energy efficiency ratings. Together with high-end SiC solutions, GaN will also enable more efficient traction inverters for both 400 V and 800 V EV systems, contributing to an increased driving range. In 2025 and beyond, robotics will see widespread adoption of GaN supported by the material's ability to enhance compactness, driving growth in delivery drones, care robots and humanoid robots. Integrating inverters within the motor chassis eliminates the inverter heatsink while reducing cabling to each joint/axis and simplifying EMC design.

Constant Current Stepper Motor Driver IC

Learn more:
toshiba.semicon-storage.com

Product Release
2025-01-28

Toshiba Electronics Europe has introduced the TB67S559FTG 50V/3.0A stepper motor driver IC that supports constant current control with built-in current detection. Housed in a 5.0 mm x 5.0 mm QFN32 package, the TB67S559FTG operates in the 8.2 V to 44 V output voltage range to cover 12 V, 24 V, and 36 V applications, including office automation (OA) equipment, point of sale (POS) terminals, vending machines, surveillance cameras, industrial equipment, and more. The TB67S559FTG represents a voltage and current rating upgrade to its pin/function compatible predecessor, the 40 V / 2.0 A TB67S539FTG, and offers an R_DS(on) of 0.4 Ω (typ., covering the upper and lower transistor). When in sleep mode, the device draws a maximum current of 1 µA. The TB67S559FTG eliminates the need for external current sense resistors having built-in current detection circuitry. The built-in charge pump circuit does not require an external capacitor.

Power Factor Correction Chokes for 1-5 kW Range

Learn more:
itg-electronics.com

Product Release
2025-01-27

ITG Electronics offers several mid-tier power factor correction chokes (PFCs) suitable for applications with continuous conduction requirements in the 1,000-5,000 W range. The company's PFC219167D Series are designed to meet AC to DC converter needs for the industrial, equipment and automotive sectors. PFC219167D Series solutions are viable for inductance ranges from 107–2,200 µH, and can handle DC voltage surges up to 400 V. With a maximum length/width of 55.5 mm x 55.5 mm and a maximum height of 42.5 mm the PFC chokes also offer an alloy powder-based DIP Inductor. The chokes can handle up to 61 A with approximately 50% roll off.

POL Converters in SIP-3 Packages

Learn more:
tracopower.com

Product Release
2025-01-27

TRACO Power released the TSR 2N & TSR 3N POL converters, which are members of a step-down switching regulator series designed as a drop-in replacement for any TO-220 package linear regulators. Complementing TRACO Power's latest generation of converters these models offer a DC input range of 4.6 – 36 V. The design allows full load operation from –40 °C to +95 °C ambient without the need of a heat sink or forced cooling. The TSR 2N and TSR 3N switching regulators feature short circuit protection, current limitation and under voltage lockout for a broad application range in many environments, especially high-volume projects where the series will help to reduce production costs. The devices operate with efficiencies of up to 95 %.

Step-Down DC/DC Converters with “lowest Quiescent Current”

Learn more:
nexperia.com

Product Release
2025-01-26

Nexperia introduced a series of step-down DC/DC converters for designing various fixed and portable battery-powered applications across consumer, industrial and automotive end-markets. For example, the NEX30606 is a step-down converter that offers a choice of 16 resistor-settable output voltages from input voltages ranging from 1.8 V to 5.0 V. It can deliver up to 600 mA of output current and offers “the industry’s lowest operating quiescent current” (Iq) of 220 µA. This feature is important e. g. for wearable consumer applications like hearing aids, medical sensors, patches and monitors in addition to battery-powered industrial applications like smart meters, asset-tracking and industrial (IIOT) and narrow-band internet-of-things (NBIOT) devices. This device provides >90 % switching efficiency for load currents ranging from 1 mA to 400 mA and has only 10 mV of output voltage ripple when stepping down from 3.6 V V_in to 1.8 V_out. The NEX40400 step-down converter operates with a quiescent current of 60 µA typ., and it can provide up to 600 mA output from a 4.5 V to 40 V input range. Featuring PFM (Pulse Frequency Modulation) for high efficiency at low to mid loads and Spread Spectrum Technology for minimizing EMI, the converter is suited for industrial distributed power systems and grid infrastructure (e. g. smart e-meters) as well as consumer white goods. Low shutdown supply current (0.3 µA) also makes this converter suitable for use in battery-powered home appliances. Nexperia also plans to release an AEC-Q100 qualified version of the NEX40400 later in 2025.

Funding secured to make “SiC Chips 30 % cheaper”

Learn more:
mi2-factory.com

Industry News
2025-01-23

mi2-factory GmbH, a high-tech start-up in the field of semiconductor equipment, announced the closing of a EUR 15 million Series A financing round and the approval of a public grant from the ICPEI ME/CT program of up to EUR 23 million. The Belgian Ion Beam Applications S.A. (IBA) and the public investment company Wallonie Entreprendre International together with Beteiligungsmanagement Thüringen and a family office, are investing a total of EUR 15 million in mi2-factory. The Federal Ministry for Economic Affairs and Climate Action (BMWK) and the Free State of Thuringia are providing on top a total of EUR 23 million in public funds from the IPCEI ME/CT program. The investment and funding will enable the scale up of the patented proprietary EFIITRON technology from today`s laboratory pilot to industrial maturity and showcase its first industrial use. Chip manufacturers will use EFIITRON in the future to reduce chip costs, increase reliability and realize new component and wafer architectures. EFIITRON is claimed to provide “unprecedented precision and flexibility of deep doping in SiC”, which is said to enable a cost reduction of up to 30 % for silicon carbide chips. mi2-factory has set itself the long-term goal of processing more than 30 % of all SiC wafers in the market with EFIITRON systems.

Ultra-Low Loss Shielded Power Inductors

Learn more:
coilcraft.com

Product Release
2025-01-23

The ultra-low profile XGL3020 power inductor series from Coilcraft is claimed to offer "the lowest DC losses and extremely low AC losses for a wide range of DC/DC converters". This characteristic makes them well suitable for a variety of applications where space is limited and efficient power management is critical, including different non-isolated converter topologies, point-of-load (POL), IoT devices, and many other applications. The devices are integrated in a package measuring 3 mm x 3 mm x 2 mm. With an 80 V voltage rating, these components are suitable for wide V_in DC/DC converters and applications. Additionally, their AEC-Q 200 qualification in the temperature range –40 °C to +125 °C with a 165 °C maximum part temperature provides reliability and robustness in automotive and other harsh environments. The components are available in the inductance range from 0.10 to 4.5 µH for current ratings up to 14.8 A with soft saturation.

Protecting HVDC Networks: 50 kV DC Breaking

Learn more:
supergrid-institute.com

Industry News
2025-01-23

SuperGrid Institute has validated its resistive superconducting fault current limiter (RSFCL) technology combined with a mechanical DC circuit breaker in major tests at 50 kV. The current was limited by 87 % compared with the prospective current. With these tests, SuperGrid Institute has paved the way for a new breaking option to protect high-voltage direct current (HVDC) networks. The “compact”, environmentally-friendly technology reduces the size of DC protection equipment on the ground by 40-50 %, by incorporating a simplified mechanical DC circuit breaker with the RSFCL which uses as many standardized components as possible in a gas-insulated environment (GIS). This is not only a significant advantage for offshore platforms but also provides cost savings. In addition, resistive superconducting fault current limiters are fully compatible with AC networks. When the voltage was raised to 50 kV DC and with 1.8 MJ injected during a test the RSFCL managed to limit the current to 5.5 kA, while the prospective current was 43 kA_p. The DC circuit-breaker then cut off the fault current.

Software Drives FOC Motors Without Shunts or Sensors

Learn more:
power.com

Product Release
2025-01-23

Power Integrations announced MotorXpert™ v3.0, a software suite for configuration, control and sensing of BLDC inverters that utilize the company’s BridgeSwitch™ motor-driver ICs. The latest release of the software incorporates Power Integrations’ shuntless and sensorless technology for field-oriented control (FOC), adding support for advanced modulation schemes and unconditional startup under any load condition, along with significant improvements to the host user interface and debugging tools. MotorXpert 3.0 comprises three main sections: Specific mathematical algorithms resident on the local MCU or DSP construct accurate feedback signals from the BridgeSwitch IC and provide real-time control of the switching patterns. The second section is a host-side application which interprets inverter actions and displays critical data in actionable format for engineering analysis. Being the third main section the control interface permits development engineers to experiment and directly converge to a final product. The MotorXpert suite is MCU-agnostic and includes a comprehensive porting guide to simplify deployment with a wide range of MCUs. It is implemented in common C language to MISRA standards. The MotorXpert v3.0 host-side application includes a GUI with a digital oscilloscope visualization tool that enables engineers to design and configure parameters and operation and simplifies debugging. Parameter tool tips and a tuning assistant help during the development process, and the parameter list provides easy motor tuning. The 3.0 version also features both V/F and I/F control, which permits motor startup in any load condition. A selectable two-phase modulation scheme allows developers to trade off temperature of the inverter vs torque ripple.

Fourth-Generation SiC MOSFET Technology

Learn more:
wolfspeed.com

Industry News
2025-01-22

Wolfspeed has unveiled details about its fourth-generation silicon carbide MOSFET technology. Targeted at high-power automotive, industrial, and renewable energy systems, “Gen 4 MOSFETs constitute a paradigm change in SiC technology”, claims Dr. Adam Barkley, VP, Power Technology Development at Wolfspeed. “These devices provide a versatile foundation enabling a long-term road map of application-optimized bare die, module, and discrete products. Every Gen 4-based design focuses on three performance vectors: holistic system efficiency, remarkable durability, and low system cost—all of which let designers reach before unheard-of performance and value.” Wolfspeed’s Gen4 MOSFETs reduce this high temperature specific on-state resistance by up to 21 %, with even more reduction at lower temperature. Simultaneously, the reverse recovery “is much softer, resulting in lower di/dt and significantly reduced voltage overshoot: about 900 V, corresponding to a 75 % reduction”. This provides a 300 V margin below the 1,200 V rating. Gen 4 technology improves the performance of hard-switching applications with up to 15 % lower EON and EOFF, while conduction losses in soft and hard-switching applications can be mitigated with up to 21 % reduction in RSP at operating temperature (with 175 °C R_DS(on) ). Gen 4 MOSFETs are designed with enhanced immunity, achieving up to 100× reduction in cosmic rays failure-in-time (FIT) rates compared to previous generations. “Additionally, they can survive overload and overstress events, with Wolfspeed die portfolio qualified for continuous operation at 185 °C and limited life operation at 200 °C”, Dr. Barkley says.

Nanocrystalline Inductors to reduce I/O and DC Line Noise

Learn more:
ttieurope.com

Product Release
2025-01-21

TTI IP&E – Europe now delivers the FW series of nanocrystalline inductors from its franchisee Chemi-Con. The material's high magnetic permeability reduces the core volume, while enabling a lower number of copper wire turns needed to achieve a high performance, small size, and lightweight design. The common mode choke coils can be used as input/output and DC line noise filters in various power source applications. Since the curie temperature (magnetic transition temperature) is at 570 °C, the coil's characteristics are maintained even in high-temperature environments such as automotive applications. With a maximum resistance of 1.2 to 26 mΩ the coil may be used in power sources for medical equipment, communication base stations, and industrial equipment. Compared to the conventional FL-V series coils, the magnetic permeability of the FW series at 10 kHz has improved by approximately 150 % (from 3.2 to 37.1 mH), while maintaining a permeability of 1.0 to 11.5 mH at 100 kHz. Additionally, the impedance in the range from 150 kHz to 1 MHz has improved. The FW series nanocrystalline coils and cores can provide continuous operation 24/7. Other features include operation in the –40 °C to +130 °C temperature range, AEC-Q200 compliance, and UL 94V-0 Type B (+130 °C) flammability and insulation rating.

Low-Loss SiC MOSFETs target Renewables, Energy Storage and EV Charging Applications

Learn more:
semiq.com

Product Release
2025-01-21

SemiQ has announced a family of 1700 V SiC MOSFETs designed to meet the needs of medium-voltage high power conversion applications, such as photovoltaic and wind inverters, energy storage, EV charging, uninterruptable power supplies, and induction heating/welding. The QSiC™ 1700 V switching planar D-MOSFETs feature a body diode, capable of operation at up to 175 oC, with all components tested to beyond 1900 V, and UIL avalanche tested to 600 mJ. The QSiC 1700 V devices are available in both a bare die form (GP2T030A170X), and as a 4-pin TO-247-4L-packaged discrete (GP2T030A170H) with drain, source, driver source and gate pins. Both are also available in an AEC-Q101 automotive qualified version (AS2T030A170X and AS2T030A170H). The QSiC 1700 V series' bare die MOSFET comes with an aluminum (Al) top side and nickel/silver (Ni/Ag) bottom side. Both it and the TO-247-4L packaged device have a power dissipation of 564 W, with a continuous drain current of 83 A (at 25 oC, 61 A at 100 oC) and a pulsed drain current of 250 A (at 25 oC). They also feature a gate threshold voltage of 2.7 V (at 25 oC, 2.1 V at 125 oC), an R_DSON of 31 mΩ (at 25 oC, 57 mΩ at 125 oC), 10n A gate source leakage current and a reverse recovery time (t_RR) of 17 ns. The TO-247-4L package has a junction to case thermal resistance of 0.27 oC/W.

Swiss Company opened Hong Kong Office

Learn more:
schurter.com

Industry News
2025-01-21

Schurter has opened an office in Hong Kong. Steffen Lindner, General Manager and Vice President EMEA, and Oswald Fiegl, Group COO, conveyed their best wishes on behalf of Group CEO Lars Brickenkamp for the opening of the Hong Kong office and praised the excellent performance of the Asian region in 2024. According to Oswald Fiegl, Schurter "is committed to developing China and India into SCHURTER Group's operational bases in Asia to enhance our ability to serve the market and our customers".

GaN-Based Motor Drive Reference Design for Humanoid Robots

Learn more:
epc-co.com

Product Release
2025-01-21

Efficient Power Conversion Corporation (EPC) launched the EPC91104, a 3-phase BLDC motor drive inverter reference design. This design is specifically suited for powering compact, precision motors in humanoid robots, such as those used for wrist, finger, and toe movements. The EPC91104 evaluation board uses the EPC23104 ePower™ Stage IC, offering a maximum R_DS(on) of 11 mΩ and supporting DC bus voltages up to 80 V. The design supports up to 14 A_peak steady-state and 20 A_peak pulsed current, ensuring the performance for humanoid robot applications that require fine motor control and precision. The Designs operates in the voltage range between 14 V and 80 V, accommodating a variety of battery systems and is suitable for space-constrained robotics. It includes overcurrent and input undervoltage protection, ensuring reliability in demanding applications. For higher-current requirements, such as elbow and knee motors in humanoid robots, EPC offers the EPC9176 board in the same family. With enhanced current capacity, the EPC9176 complements the EPC91104 to cover a full range of motor drive applications in humanoid robotics. The EPC91104 is compatible with controller boards from leading manufacturers, including Microchip, Texas Instruments, STMicroelectronics, and Renesas. It is equipped with several sensing and protection features as well as with features for rapid prototyping and testing.

Integrated Full-Bridge DC Motor Driver with real-time Diagnostics

Learn more:
st.com

Product Release
2025-01-20

STMicroelectronics’ VNH9030AQ integrated full-bridge DC motor driver handles diverse automotive uses including functional-safety applications. As well as integrating advanced diagnostics, the driver has a dedicated pin for real-time output status that saves external circuitry and slims the bill of materials. With R_DS(on) of 30 mΩ per leg, the VNH9030AQ handles mid- and low-power DC-motor driven applications such as door-control modules, washer pumps, powered lift gates, powered trunks, and seat adjusters. Integrated non-dissipative current-sense circuitry monitors the current flowing through the device to distinguish each motor phase. The VNH9030AQ integrates the high-side and low-side MOSFETs with gate drivers, diagnostics, and protection against overvoltage transients, undervoltage, short-circuit conditions, and cross conduction. Flexibility to configure the MOSFETs either in parallel or in series allows use in systems involving multiple motors or to meet other specific requirements. All products feature a 6 mm x 6 mm thermally enhanced triple-pad QFN package designed for underside cooling and share a common pinout to ease layout and software reuse.

Vibration-resistant Capacitors

Learn more:
we-online.com

Product Release
2025-01-20

All SMT variants of the Aluminum Electrolyte and Aluminum Hybrid Polymer capacitors from Würth Elektronik are now available in an extremely vibration-resistant version on request. Using enlarged solder pads and thicker base plates, the capacitors can withstand accelerations up to 30 g (294 m/s²). Electronics must continue to function reliably, even when exposed to strong mechanical stress. This is the case with electronically controlled tools, industrial applications, construction machinery, or drones, for example. SMT components are often not the best choice here, because without special adaptations, they may not withstand the prolonged vibration stress. Especially larger components then quickly reach their limits, because they can detach from the circuit board under continuous load and cause the electronics to fail. However, making electronics vibration-resistant does not necessarily require special connection techniques like press-fitting. The vibration-resistant versions of the Würth Elektronik capacitors feature larger solder pads for a more stable connection to the circuit board and an extra-high base for improved support and vibration damping. To maintain optimal temperature management, the manufacturer has provided the base of these capacitors with special cut-outs. The capacitors are tested under conditions that go beyond the requirements of IEC 60384-4: The components must remain securely attached to the circuit board for twelve hours (four hours per axis) under vibration in the frequency range between 10 Hz and 2 kHz with an amplitude of 0.75 mm. The final electrical tests then confirm their functionality. The vibration-resistant capacitors can be processed on standard SMT production lines.

Automotive Power Management IC

Learn more:
infineon.com

Product Release
2025-01-20

Infineon Technologies is expanding the OPTIREG™ PMIC (Power Management) family with the OPTIREG PMIC TLF35585, an integrated multi-rail power supply solution for demanding automotive systems. The TLF35585 provides a power supply for AURIX and other microcontrollers. The power supply solutions are suited for functional safety applications in harsh automotive environments, particularly in the chassis, powertrain, domain control and transmission areas. The OPTIREG PMICs enable voltage regulation with pre- and post-regulator architectures with DC/DC and linear regulators as well as trackers. In addition to the power supply, additional monitoring and control functions are integrated, enabling users to develop automotive ECUs for safety-related applications. The TLF35585 PMIC includes a boost buck pre-regulator that supplies the post-regulator rails for the microcontroller supply, communication supply and a voltage reference. It also provides two trackers that follow the voltage reference to supply off-board sensors. The main supervision functions of the TLF35585 include a configurable window watchdog (time-based trigger), a function watchdog (question and response-based trigger), error pin monitoring as well as voltage monitoring. For the interaction with microcontrollers, a 16-bit SPI, interrupt and reset function are also available. The device complies with ISO 26262 for systems up to ASIL D and supports an extended junction temperature range of up to 175 °C. The IC integrates a state machine and a wake-up concept with timer and a stand-by regulator. TLF35585 is available in either a small VQFN-48 package or a TQFP-48 package – both packages are thermally enhanced and fully AEC-Q100 qualified (Grade 0).

Increased Power Density and Thermal Performance

Learn more:
vincotech.com

Product Release
2025-01-20

Vincotech released "flow E3BP", an advancement of the company's flow 2 and flow E3 housing. Featuring a specially treated surface, its convex baseplate provides a better thermal contact to better disperse heat and handle more power with a smaller footprint. The module's CTI600 housing material holds up well to higher system voltages. Its isolation walls increase creepage and clearance distances. Pre-applied thermal interface material is optionally available, as are Press-fit pins. Developed with the increasingly challenging demands of renewable energy systems in mind, the flow E3BP enables engineers to design 350+ kW utility string PV inverters with just a single housing per phase, cutting 30 % of the cost for a dual-module solution. It also serves to reduce the heatsink area by as much as 34 % compared to flow E3, thereby increasing power density to 51 %. Chosen for its low inductivity, the new flow E3BP figures prominently in solar and ESS inverters for the utility and commercial segments. Today's flow E3BP housing meets tomorrow's 2000 V systems' high voltage requirements, and the company aims to extend this product portfolio to address further applications such as motion control. Currently Vincotech offers 24 options rated from less than 10 kW up to MW. The flow 2, flow S3, and flow E3 housings see wide use in solar and ESS applications.

APEC 2025 Plenary Session Speakers to Keynote the Conference’s 40th Anniversary

Learn more:
apec-conf.org

Event News
2025-01-15

The APEC 2025 Conference Committee for the annual Applied Power Electronics Conference has announced that four plenary speakers are scheduled to keynote its 40th anniversary program. The Plenary Session for APEC 2025 (March 16-20, Atlanta) will take place Monday afternoon, March 17th, in the Georgia Congress Center’s from 1:30 to 4:30 PM. The Plenary Session will open with a welcome message by APEC 2025 General Chair Aung Thet Tu, followed by plenary introductions by APEC 2025 Program Chair Jin Wang. Designed to engage a global audience hailing from all sectors of the power electronics industry, the sessions will include interactive Q&As at the end of each presentation. After the Plenary Session, all registered APEC attendees are invited to attend the Welcome Reception in Exhibit Hall being held from 4:30 to 7:30 PM. The APEC 2025 Plenary Session speakers and presentations are:
- A Technology’s Journey: 40 Years of APEC by John G. Kassakian, Professor of Engineering, Emeritus, Massachusetts Institute of Technology (The first and second APEC General Chair, 1986 and 1987).
- Emerging Applications for Power Electronics in Efficient, Resilient Buildings by Wyatt Merrill, Technology Manager for Solid-State Lighting and Building Electric Appliances, Devices and Systems (BEADS), US Department of Energy.
- The Role of Power Electronics in Achieving a Sustainable Hydrogen Economy by Francisco Canales, Corporate Research Fellow, ABB Switzerland, Ltd.
- Integrated Magnetics and Heterogenous Integration Enabling Vertical Power Delivery for High Performance Computing by Cian Ó Mathúna, Research Director, Integrated Power and Energy Systems Embedded and Integrated Magnetics, Tyndall National Institute.

Backend Fab in Thailand

Learn more:
infineon.com

Industry News
2025-01-14

Infineon Technologies has broken ground for a semiconductor backend production site in Samut Prakan, south of Bangkok. The first building is planned to be ready for operations at the beginning of 2026. Further ramp-up will be managed flexibly in line with market demand. The project is supported by the Thailand Board of Investment (BOI). Infineon said it will support developing a robust semiconductor ecosystem in Thailand covering key components and materials in the supply chain. By enhancing partnerships with local businesses and institutions, the company intends to strengthen the semiconductor ecosystem and the development of a skilled work force. Through close collaboration with universities and local entrepreneurs, Infineon helps to grow a talent pool of highly skilled engineers with expertise in advanced semiconductors. A comprehensive training and education program to improve competencies in AI, digitalization and automation has been developed. The first group of Thai engineers successfully completed this training program at other Infineon sites.

Design with GaN for High-Performance Motor Drives

Learn more:
epc-co.com

Product Release
2025-01-14

Efficient Power Conversion Corporation (EPC) introduces the EPC91200, a fully configured motor drive inverter reference design that delivers performance and flexibility for a variety of industrial and battery-powered applications. The EPC91200 is designed for 3-phase brushless DC (BLDC) motor drive applications and features the EPC2305, a 150 V 3.0 mΩ R_DS(on) GaN FET. The EPC91200 supports voltage ranges from 30 V to 130 V, making it suitable for 80 V and 110 V battery systems commonly used in industrial automation, agricultural machinery, and material handling equipment like forklifts. It supports up to 60 A_pk (40 A_RMS) maximum output current with a switching frequency of up to 150 kHz, while its PCB layout and GaN technology reduce resistance and heat generation. Current sensing, voltage monitoring, overcurrent protection, and temperature sensing for robust operation are included. It works with multiple controller boards from leading manufacturers like STMicroelectronics, Texas Instruments, and Microchip. The EPC91200 provides features tailored for quick deployment and evaluation. Its PCB (130 mm x 100 mm) includes a pre-configured shaft encoder/Hall sensor interface and supports Field-Oriented Control (FOC) techniques. Engineers can directly measure critical signals and optimize system performance using built-in test points.

Leadership Transition

Learn more:
littelfuse.com

People
2025-01-13

As David (“Dave”) Heinzmann, President and Chief Executive Officer of Littlefuse, has decided to retire, the Board has appointed Dr. Greg Henderson, a member of the Littelfuse Board of Directors, as President and Chief Executive Officer effective February 10, 2025. However, Dave Heinzmann will remain on the Littelfuse Board through April 2025 and, to support a seamless transition, serve as an advisor to the Company through August 10, 2025. Dr. Greg Henderson, 56, has been a member of the Littelfuse Board of Directors since May 2023. From 2017 to 2024, Dr. Henderson served as the Senior Vice President of the Automotive & Energy, Communications, and Aerospace Group for Analog Devices. Previously, he served as VP of the RF and Microwave Business for ADI from 2014 to 2017, and as VP of the RF and Microwave Business for Hittite Microwave Corporation until its acquisition by ADI in 2014. Before joining Hittite, Dr. Henderson held various positions at Harris Corporation, Tyco Electronics, TriQuint Semiconductor, and IBM. Dr. Henderson holds a bachelor’s degree in electrical engineering from Texas Tech University and a Ph.D. in electrical engineering from the Georgia Institute of Technology.

Power Module Series in LGA-12EP

Learn more:
we-online.com

Product Release
2025-01-11

With MagI³C-VDLM, Würth Elektronik presents three power modules in the LGA-12EP package for the 24 V industrial power bus. The modules are characterized by high resilience to voltage transients on the 24 V bus and a wide input-voltage range from 3.5 V to 38 V. The module, measuring 10 × 6 × 3.1 mm³, is available with an output current of 1, 2, or 3 A. The MagI³C-VDLM series of power modules offers a fully integrated DC/DC power supply that combines all essential components in a compact package: switching regulator with integrated MOSFETs, controller, compensation circuitry, and a shielded inductor. The power module maintains a constant, selectable PWM switching frequency across the operating range, thereby optimizing output ripple for sensitive and precise applications. It achieves peak efficiency up to 94 %. The MagI³C-VDLM power modules are designed for use in point-of-load DC/DC applications on 24 V, 12 V, and 5 V buses. Typical applications include test and measurement technology, medical technology, industrial electronics, and telecommunications. The module is e. g. suited for supplying interfaces, microcontrollers, microprocessors, digital signal processors, and field-programmable gate arrays. Its EMC behavior complies with the EN55032 Class B / CISPR-32 standard.

Sebastian Fischer appointed CEO of Traco Power Group

Learn more:
tracopower.com

People
2025-01-10

As part of a future-oriented growth strategy, Sebastian Fischer has taken over the position of CEO of the Traco Power Group on January 1, 2025. Together with an experienced Group Management Team, he will drive the further development of the company. As before, Jennifer Caspar, company owner and Chair of the Board of Directors, together with her father Rolf Caspar and Ueli Wampfler, both members of the Board of Directors, will continue to focus on the strategic direction of the group. After more than a decade of successfully managing Traco Power Germany, Sebastian Fischer moved to the Swiss headquarters at the end of 2023, where he took on the role of Chief Commercial Officer (CCO). In this role, he managed all subsidiaries of the Traco Power Group and was responsible for the group-wide revenue and all commercial activities of the Traco Power Group. As of January 1, 2025, Fischer handed over his responsibilities as CCO to Florian Haas, who has successfully managed product management, IT and marketing in the Traco Power Group for seven years. Before joining Traco Power, Sebastian Fischer held senior management positions in industry, with a focus on technology-oriented areas. He graduated from Munich University of Applied Sciences in 2004 with a degree in electrical engineering and electronics, followed by an MBA. He completed a postgraduate course in business law at the University of Hagen in 2015.

100 V N-Channel MOSFETs

Learn more:
renesas.com

Product Release
2025-01-09

Renesas introduced 100 V high-power N-Channel MOSFETs for applications such as motor control, battery management systems, power management and charging. End products include electric vehicles, e-bikes, charging stations, power tools, data centers, uninterruptable power supplies (UPS) and more. The company has developed its REXFET-1 MOSFET wafer manufacturing process that enables the devices “to reduce on-resistance by 30 %”. The REXFET-1 process also enables the MOSFETs to offer a 10 % reduction in Q_g characteristics (the amount of charge needed to apply voltage to a gate), and a 40 % reduction in Q_gd (the amount of charge that needs to be injected into the gate during the "Miller Plateau" phase). The RBA300N10EANS and RBA300N10EHPF MOSFETs are available in industry-standard TOLL and TOLG packages that are pin-compatible with devices from other manufacturers, and 50 % smaller than traditional TO-263 packages. The TOLL package also offers wettable flanks for optical inspection.

Current Sensor ICs deliver Higher Isolation in a 40% Smaller Footprint

Learn more:
allegromicro.com

Product Release
2025-01-08

Allegro MicroSystems announced the launch of two current sensor ICs - the ACS37030MY and the ACS37220MZ. Leveraging Allegro's sensing technology, these ICs provide low internal conductor resistance, high operating bandwidth and reliable performance across a wide range of automotive, industrial and consumer applications. Allegro's current sensor ICs are designed for precise current sensing in a compact and durable package. Featuring a widebody design, the ACS37030MY and ACS37220MZ deliver higher isolation in a 40% smaller footprint compared to the existing 16-pin packages on the market. The innovative designs also incorporate lower resistance, which helps to reduce power dissipation. The ACS37030MY is a fully integrated current sensor IC with fast response time for protection of wide bandgap GaN devices. It uses a combination of Hall-effect and inductive coil signal paths to sense current over a wide frequency range. This package offering enables a product which is both 5x faster than existing solutions, but also 40% smaller. ACS37030 is also available in a narrow-body package for lower isolation requirements. The ACS37220MZ fully-integrated, Hall-effect current sensor features a 150 kHz bandwidth and fault pin. This device is designed for value-line current sensing applications as a successor to the popular ACS724/5 family of products. The package of the ACS37220MZ offers a 40% smaller solution size and lower resistance for lower power dissipation.

Power Management IC for Energy Harvesting

Learn more:
nexperia.com

Product Release
2025-01-07

Nexperia is expanding its energy harvesting portfolio with the NEH71x0 power management IC (PMIC) family. These devices eliminate the need for an external inductor, reducing circuit board space and bill-of-materials (BOM) cost. It is available in a compact 4 mm x 4 mm QFN28 package. Applications include remote controls, key fobs, smart tags, asset trackers, occupancy sensors, environmental monitors, wearables, keyboards, tire pressure monitors, and any number of Internet of Things (IoT) applications. These PMICs represent a complete power management solution for energy harvesting: enabling engineers to extend battery life, recharge batteries or supercapacitors, and even eliminate batteries in certain designs, thanks to its cold start feature. With the NEH71x0 (NEH7100BU, NEH7110BU) PMICs, designers can choose from multiple ambient power sources such as light, kinetic/piezo or a temperature gradient. With an input power range from 15µW to 100mW, these high-performance energy harvesting ICs can convert energy with an efficiency of up to 95%. These devices include an on-chip maximum power point tracking (MPPT) adaptive algorithm to optimize the energy harvested, which adapts every 0.5 second, making the PMIC extremely responsive to changing environmental conditions.

Adding 250 Amp Series to its Digital Shunt Sensor Line

Learn more:
bourns.com

Product Release
2025-01-07

Bourns announced that it has further expanded its digital shunt sensor line with the release of the Riedon™ Model SSD-250A Series Shunt Sensor – Digital by Bourns. The 250 amp series is available in two versions: the RS-485 serial interface model, which can also be configured as MODBUS RTU, and a customizable CANbus model. Designed to give developers a broader range of measurement solutions with the benefits of digital, this series features 100 A, 250 A and 500 A nominal current, a -40 °C to +115 °C operating temperature range and 1500 VDC galvanic isolation that helps to enhance accuracy and operational stability. Offered in a compact System-in-Package (SIP), the Model SSD-250A Series delivers calibrated and temperature-compensated digital output, making these shunt sensors ideal current sensing solutions for a wide variety of battery-related applications including renewable energy systems, motor drives and EV charging stations. These shunt-based sensors also help eliminate the need for periodic device calibrations, all while providing highly accurate measurements that contribute to more efficient use of power. In addition, the series features considerably lower insertion resistance than passive shunt sensors and Hall Effect sensors.

Power Factor Correction Chokes for Applications from 100-1,000 Watts

Learn more:
itg-electronics.com

Product Release
2025-01-06

ITG Electronics has further expanded its range of mid-tier power factor correction chokes (PFCs). Suitable for applications with continuous conduction requirements in the 100-1,000 Watt range, the company's PFC222222D Series are designed to meet rigorous AC to DC converter needs for the industrial, equipment and automotive industries. An extension of ITG Electronics' Cubic Design set of power factor correction chokes, PFC222222D Series solutions are viable for Inductance ranges from 260-4500uH and, at a maximum length/width of 21.5 x 22mm and height of 22mm, occupy an exceedingly compact footprint. Compared with traditional toroidal-shaped PFC chokes, the PFC222222DH Series features a flat wire and square core construction to save space and increase power density as much as threefold. The solutions are up to 50% smaller compared with toroidal-shaped PFC chokes with similar power ratings, and can reduce DC resistance by as much as 40%, leading to substantially lower copper losses. ITG Electronics' PFC222222D Series offers an alloy powder-based DIP Inductor that minimizes core loss, and the chokes' low-leakage magnetic flux further reduces energy loss and improves overall efficiency. PFC chokes also come free of any concerns related to thermal aging. The chokes can handle 12.4 Amp with approximately 50% roll off.

2025 Device Research Conference Announces Call for Papers

Learn more:
2025.deviceresearchconference.org

Event News
2025-01-06

The Device Research Conference (DRC) has announced a Call for Papers for DRC 2025, the conference's 83rd anniversary. DRC will be held from June 22-25, 2025 at Duke University in Durham, NC. The DRC brings together leading scientists, researchers, and students from many disciplines in academia and industry to share their latest research and discoveries in device science, technology, and modeling, including many of the first disclosures of key device technologies. The DRC 2025 technical program offers a rich and diverse agenda, featuring three plenaries, seven keynotes, and 40 invited speakers that cover a broad spectrum of device-related topics. The program will include oral and poster sessions showcasing advanced research in electronic and photonic devices, evening panel discussions, and a special Focus Session on Devices for Heterogeneous Integration. The plenary talks will be delivered by leaders in device science and technology: Eli Yablonovitch, Nicky Lu, and Suman Datta. Other program highlights include a Short Course on Heterogeneous Integration, a Tutorial on modeling and simulations, and vibrant student participation, with Student Paper Awards recognizing exceptional contributions. DRC 2025 is held in coordination with the Electronic Materials Conference (EMC), recognizing the strong interaction between device and electronic materials research, providing an opportunity for meaningful exchanges of information between attendees of both conferences.

Acquisition of 200mm Wafer Fab

Learn more:
littelfuse.com

Industry News
2024-12-30

Littelfuse announced it completed the acquisition of the 200mm wafer fab located in Dortmund, Germany ("Dortmund fab") from Elmos Semiconductor. The completion of the Dortmund fab acquisition enhances Littelfuse long-term power semiconductor opportunities across a broad base of industrial end markets including energy storage, automation, motor drives, renewables, power supplies, and charging infrastructure.
"We are excited to welcome the talented and highly skilled Dortmund fab employees to the Littelfuse team," said Dave Heinzmann, President & Chief Executive Officer. "This acquisition supports Littelfuse long-term growth strategy while expanding our power semiconductor technology offering and high-quality manufacturing capabilities."
"The acquisition of the Dortmund fab expands our long-term organic growth opportunities for broad-based customer demand in high-growth power conversion applications across industrial end markets," said Chad Marak, Senior Vice President and General Manager, Littelfuse Semiconductor Business. "The Dortmund fab complements our current footprint while growing our highly skilled technology team and enhancing our operational capabilities."

Samples of HVIGBT Modules now Shipping

Learn more:
mitsubishielectric.com

Industry News
2024-12-23

Mitsubishi Electric Corporation announced that it will begin shipping samples of two new S1-Series High Voltage Insulated Gate Bipolar Transistor (HVIGBT) modules, both rated at 1.7kV, for large industrial equipment such as railcars and DC power transmitters. Thanks to proprietary Insulated Gate Bipolar Transistor (IGBT) devices and insulation structures, the modules offer excellent reliability and low power loss and thermal resistance, which are expected to increase the reliability and efficiency of inverters in large industrial equipment. Mitsubishi Electric's 1.7kV HVIGBT modules, first released in 1997 and highly regarded for their performance and reliability, have been widely adopted for inverters in power systems. The new S1-Series modules incorporate Mitsubishi Electric's proprietary Relaxed Field of Cathode (RFC) diode, which increases the Reverse Recovery Safe Operating Area (RRSOA) by 2.2 times compared to previous models for improved inverter reliability. In addition, the use of an IGBT element with a Carrier Stored Trench Gate Bipolar Transistor (CSTBT) structure helps reduce both power loss and thermal resistance for more efficient inverters. Furthermore, Mitsubishi Electric's proprietary insulation structure increases the insulation voltage resistance to 6.0kVrms, 1.5 times that of previous products, resulting in more flexible insulation designs for compatibility with a wide range of inverter types.

Enabling Semiconductor Development

Learn more:
silvaco.com

Industry News
2024-12-20

Micon Global has started a strategic sales partnership with Silvaco, a provider of software solutions for semiconductor and photonics design, including TCAD, EDA software, and SIP solutions. This sales partnership is intended to "drive Silvaco's expansion across EMEA market". Silvaco specializes in developing TCAD and EDA software, as well as SIP solutions that support semiconductor design and digital twin modeling through AI tools. With its product range, Silvaco enables the development of complex semiconductor and photonics systems for diverse applications, including automotive, IoT, high-performance computing, and 5G/6G mobile networks. Micon connects technology providers with companies in the semiconductor, electronics, and software sectors.

High Current Metal Shunt For E-Bike Power Systems

Learn more:
seielect.com

Product Release
2024-12-19

As power electronics evolve, the requirements for high current, low resistance sensing resistors continues to increase. Emerging applications, such as electric bikes and scooters may require high power, high accuracy, and low thermal resistance. Stackpole's HCS series provides high power, precise sensing and low thermal resistance. It offers power ratings up to a 10 W rated in 5930 size with a minimum TCR of 50 ppm. A raised element improves the thermal footprint of the device and decreases PCB and terminal temperature. Resistance values starting at 0.2 mΩ enable high efficiency sensing in a surface mountable package. According to the manufacturer the all-metal construction also provides "very high pulse withstanding superior to that of film or foil on ceramic sense resistor types."

Wide-Creepage Switcher IC for 800 V Automotive Applications

Learn more:
power.com

Product Release
2024-12-18

Power Integrations introduced a wide-creepage package option for its InnoSwitch3™-AQ flyback switcher IC for automotive applications. A drain-to-source-pin creepage distance of 5.1 mm eliminates the need for conformal coating, making the IC compliant to the IEC60664-1 standard in 800 V vehicles while simplifying manufacturing and increasing system reliability. The company's InSOP™-28G package enables 1000 V_DC to be provided to the primary side, while keeping all other pins safely isolated in pollution degree 2 environments. The 1700 V-rated CV/CC InnoSwitch3-AQ switching power supply ICs incorporate a silicon carbide (SiC) primary switch capable of delivering up to 80 W of output power. The ICs reduce the number of components required to implement a power supply by up to 50 %. An increased drain-pin width is beneficial in withstanding high levels of shock and vibration, especially in eAxle automotive applications. These members of the InnoSwitch3-AQ family will start up with 30 V on the drain without external circuitry-which is critical for functional safety. Additional protection features include input under-voltage, output over-voltage and over-current limiting. Synchronous rectification and a multi-mode valley switching, discontinuous/continuous conduction mode (DCM/CCM) flyback controller deliver greater than 90 percent efficiency. Devices consume less than 15 mW at no-load. Target automotive applications include battery management systems, µDC/DC converters, control circuits and emergency power supplies in the main traction inverter.

Next-Generation SiC Process Platform

Learn more:
xfab.com

Industry News
2024-12-17

X-FAB Silicon Foundries has launched XSICM03, its "next-generation XbloX platform, advancing Silicon Carbide process technology for power MOSFETs, delivering significantly reduced cell pitch, enabling increased die per wafer and improved on-state resistance without compromising reliability". XbloX is X-FAB's streamlined business process and technology platform, which integrates qualified SiC process development blocks and modules for planar MOSFET production, simplifying the onboarding process and significantly reducing design risks and product development time. By combining proven process modules with robust design rules, control plans, and FMEAs, XbloX is said to enable "faster prototyping, easier design evaluation, and shorter time to market". This next generation platform provides active area design cell size reduction "while maintaining robust process controls, as well as leakage and breakdown device performance". The XSICM03 platform allows customers to create SiC planar MOSFETs with a cell pitch that is over 25 % smaller than the previous generation. This allows for up to a 30 % increase in die per wafer compared to the previous generation.

Asymmetrical TVS Diodes for Gate Driver Protection for Automotive SiC MOSFETs

Learn more:
littelfuse.com

Product Release
2024-12-17

Littelfuse announced the launch of its TPSMB Asymmetrical TVS Diode Series, the first-to-market asymmetrical transient voltage suppression (TVS) diode specifically designed for the protection of Silicon Carbide (SiC) MOSFET gate drivers in automotive applications. This product addresses the increasing demand for reliable overvoltage protection in next-generation electric vehicle (EV) systems, delivering a compact, single-component solution that replaces multiple Zener diodes or TVS components traditionally used for gate driver protection. The TPSMB Asymmetrical TVS Diode Series provides superior protection for SiC MOSFET gate drivers, which are prone to overvoltage events due to faster switching speeds compared to traditional silicon-based MOSFETs or IGBTs. The asymmetrical design of the TPSMB Series supports SiC MOSFETs' differing positive and negative gate driver voltage ratings, ensuring enhanced performance in a variety of demanding automotive power applications where SiC MOSFETs are used, including Onboard chargers (OBCs), EV traction Inverters, I/O interfaces, and Vcc buses. These applications demand high-performance overvoltage protection (OVP) for SiC MOSFET gate drivers to ensure optimal performance, longevity, and efficiency.

Automotive-Compliant Synchronous Buck LED Driver

Learn more:
diodes.com

Product Release
2024-12-16

Diodes Incorporated (Diodes) introduced the automotive-compliant LED driver AL8891Q. This device is a synchronous Buck LED driver with high-side current sense driving up to 2 A from a 4.5 V to 65 V input voltage range. It supports up to 95% duty cycle, allowing the drive of longer LED chains. The device is intended for automotive lighting applications, including daytime running lights (DRL), fog lights, turn lights, brake/stop lights, and interior lights. Using constant-on-time (COT) control, the AL8891Q achieves control-loop compensation and cycle-by-cycle current limiting without requiring an external compensation capacitor. The device's switching frequency is adjustable from 200 kHz to 2.5 MHz, allowing it to optimize efficiency or achieve a smaller inductor size and compact form factor. It incorporates a spread spectrum frequency modulation technique to enhance EMI performance, which eases compliance with the most stringent CISPR 25 Class 5 standard. The AL8891Q has two independent pins-PWM and analog dimming. PWM dimming, from 0.1 kHz to 2 kHz, is suitable for high-resolution dimming, and analog dimming is from 0.15 V to 2 V. It features an internal soft-start function, gradually increasing the inductor and switch current to minimize potential overvoltage and overcurrent at the output. The device features several protections with fault reporting, including thermal shutdown with auto-restart, input and constant current undervoltage lockout (UVLO), cycle-by-cycle current limit, and LED-open & short circuit protection. It is available in the thermally enhanced TSSOP-16EP package with an operating temperature range of -40 °C to +125 °C.

Current Transducer for DC Charging Station Testing Device Demonstrator

Learn more:
danisense.com

Industry News
2024-12-16

A current research project at Graz University of Technology analyses periodic verification and safety of direct current electric vehicle charging stations. As part of the ProSafE² project (Protection, Safety and Efficiency of Electric Vehicle Charging Stations) the basis for periodic verification of direct current electric vehicle charging stations (EVCS) is being researched and a test procedure for the recurring testing of DC charging stations has been developed over the past two and a half years in order to ensure their safety over the entire operating period. Findings from the project are also being incorporated into the update of the OVE guideline R 30. For this project, a DS600ID current transducer from Danisense has been integrated into the DC circuit of the 'mobile charging station testing device demonstrator,' which is connected to the DC charging station. The current transducer precisely measures the currents flowing between the charging station and the demonstrator. This is very important as the project also focuses on the energy efficiency of the EV charger. "For such an energy efficiency measurement you need to have highly accurate current measurements to reduce the impact of the error in the calculation," remarks Loic Moreau, EMEA Sales & Marketing Director at Danisense.

Silicone Gap Filler for Thermal Management

Learn more:
wevo-chemie.de

Product Release
2024-12-12

With WEVOSIL 26040 FL, Wevo is expanding its portfolio of thermal interface materials (TIMs) with a specially optimised silicone gap filler. The material features a thermal conductivity of 4 W/m*K, a bond line thickness of less than 70 µm and enhanced sedimentation stability. In addition, the dosing profile has been sharpened to secure an efficient production process. It is suited for the thermal management of numerous electrical and electronic applications, from power electronics to battery technologies. With its specially developed filler combination the material also bridges small gaps. Material properties such as reactivity can be customized to individual needs. This silicone gap filler offers a temperature resistance of up to 200 °C, flame-retardant properties in accordance with UL 94 V-0 (as of a thickness of just 2 mm) and good mechanical properties, including elongation at break of more than 30 per cent. When cured, WEVOSIL 26040 FL meets the requirements of the PV 3040 test specification for low-volatile emissions in the automotive industry and is therefore suitable for a wide range of applications.

Instrument for (Power) Designs

Learn more:
tmi.yokogawa.com

Product Release
2024-12-12

The DL950 is a from Yokogawa is a combination of a mixed signal oscilloscope and portable data acquisition recorder that can be used to capture both high speed transient events and long run trends. Such a ScopeCorder offers a combination of channel count, input types, triggering, and recording to tackle the job of electromechanical systems development and troubleshooting. It accurately captures switching waveforms of inverters and fastmoving noises around the power supply by using its 200 MSamples/s isolation module. It operates with an isolated input of up to 1000 V, an ADC resolution of 14 bit and provides up to 20 s of continuous acquisition. Using 10 Gbit/s Ethernet, up to 20 MS/s of data can be stored in real time on a PC. An SFP+ module, a fiber optic cord, and the PC software IS8000 are used for data transfer.

Power Sensors for accurate Measurements up to 18 GHz

Learn more:
rohde-schwarz.com

Product Release
2024-12-12

With its R&S NRPxE RF power sensors, Rohde & Schwarz claims to set "a new standard for accurate and reliable power measurements in frequency ranges up to 18 GHz, while offering an unprecedented level of affordability". They feature a dynamic range of 80 dB, a video bandwidth of 100 kHz, and the ability to perform up to 1,000 measurements per second. With frequency ranges from 10 MHz to 8 or 18 GHz, the power sensors cater to various measurement needs. The sensors feature an IEEE-compliant label and connector color coding, for safe and secure operation. The built-in trigger capability and RGB status LED make monitoring the sensor status and trigger measurements easier. Equipped with a USBTMC interface, the R&S NRPxE sensors can be directly integrated into test systems and they also allow remote controlling via PC or mobile device. The free PowerViewer mobile app enables on-the-go measurements using an Android smartphone, e. g. for field service and maintenance applications. These power sensors replace the established NRP-Z2x1 RF power sensors.

PMICs for SoCs Adopted in Reference Designs for Cockpits

Learn more:
rohm.com

Product Release
2024-12-12

ROHM Semiconductor announced the adoption of its PMICs in power reference designs focused on the next-generation cockpit SoCs Dolphin3 (REF67003) and Dolphin5 (REF67005) by Telechips, a fabless semiconductor manufacturer for automotive applications headquartered in Pangyo, South Korea. Intended for use inside the cockpits of European automakers, these designs are scheduled for mass production in 2025. ROHM and Telechips have been engaged in technical exchanges since 2021, fostering a close collaborative relationship from the early stages of SoC chip design. As a first step in achieving this goal, ROHM's power supply solutions have been integrated into Telechips' power supply reference designs. These solutions support diverse model development by combining sub-PMICs and DrMOS with the main PMIC for SoCs. For infotainment applications, the Dolphin3 application processor (AP) power reference design includes the BD96801Qxx-C main PMIC for SoCs. Similarly, the Dolphin5 AP power reference design developed for next-generation digital cockpits combines the BD96805Qxx-C and BD96811Fxx-C main PMICs for SoC with the BD96806Qxx-C sub-PMIC for SoC, improving overall system efficiency and reliability.

2300-V SiC Power Modules

Learn more:
wolfspeed.com

Product Release
2024-12-12

The first family of 2300-V Wolfspeed WolfPack™ power modules from Wolfspeed was designed for 1500-V DC bus systems to maximize performance while reducing BoM, production and maintenance costs. Using a 2300-V SiC module reduces component count and system size by moving to 2-level power conversion architectures. Basically, this means a 15% greater voltage headroom with better surge and overload tolerance when compared to a 2000-V SiC design as well as a 2-3x reduction in switching losses for 1500-V DC bus application compared to other SiC solutions. The manufacturer highlights the "optimized FIT rate for 24/7 continuous 1500-V DC operation via improved cosmic ray susceptibility compared to a 2000-V design". A typical family member is the CAB5R0A23M4(T) SiC half-bridge module, which operates with an on-resistance of 5.0 mΩ. The DC continuous drain current is specified to be 150 A while the pulsed drain is specified to be 300 A.

ROL0 and Halogen-free Flux-cored Wire

Learn more:
indium.com

Product Release
2024-12-10

Indium Corporation announced the global availability of CW-807RS, a halide- and halogen-free flux-cored wire that improves wetting speeds and cycle times for electronics assembly and robot soldering applications. CW-807RS is a no-clean formula designed to maximize the solderability of a halogen-free cored wire solder flux. It is an upgraded version of Indium Corporation's CW-807 formula, which has been popular with electronics assemblers and other customers for many years. This halogen-free version will provide improved wetting speeds and contains the company's industry-leading spatter control technology. CW-807RS provides benefits in manual and robotic soldering applications requiring an "L" IPC classification and halogen-free wire, as well as in manual and robotic soldering applications requiring extra wetting power to achieve higher throughput while remaining halogen-free. Additionally, the spatter control technology within the flux produces an aesthetically pleasing board post-soldering by leaving minimal spattering and a clear to light-colored residue.

USB PD EPR Solution Featuring Type-C Port Controller and Buck-Boost Battery Charger

Learn more:
renesas.com

Product Release
2024-12-10

Renesas Electronics introduced the RAA489118 buck-boost battery charger and the RAA489400 USB Type-C® port controller. The two ICs combine to provide a premier Extended Power Range (EPR) USB Power Delivery (PD) solution. The RAA489118 functions as either a battery charger supporting two to seven battery cells in series or as a voltage regulator supporting 30V input and 30V output. It employs Renesas' patented R3™ (Robust Ripple Regulator) technology, which combines features of fixed-frequency and hysteretic Pulse-Width Modulation (PWM) technologies. R3 modulation technology delivers acoustic noise-free operation, fast dynamic response, and light-load efficiency for longer battery life. The RAA489118 includes an SMBus (System Management Bus) interface that is widely employed in power tools, home appliances and light industrial products. The SMBus interface, combined with the buck-boost and bidirectional features, allows the RAA489118 to work seamlessly with the RAA489400 and other components in USB-C PD implementations. Its input and output voltage levels also match mainstream solar power voltage levels, making it an ideal fit for solar portable power station applications. The RAA489400 port controller supports USB-PD VBUS power up to 48V/5A. It features an integrated PHY, both Sink and Source Power Path Gate Drivers with external NFETs, short-circuit protection, VBUS discharge, a VCONN MUX and dead battery support.

Solar Optimizers with GaN FETs

Learn more:
epc-co.com

Product Release
2024-12-10

Efficient Power Conversion (EPC) launched the EPC9178, a reference design for photovoltaic (PV) optimizers. Designed to deliver high reliability while addressing critical challenges in energy efficiency and cost-effectiveness through the reduction of passive components in solar energy systems, the EPC9178 demonstrates the transformative potential of GaN technology for renewable energy solutions. This reference design employs a back-to-back buck-boost converter topology for energy harvesting for each solar panel, even under challenging conditions such as shading. This solution bridges the gap between micro-inverters and string inverters, offering enhanced energy efficiency and compatibility with existing infrastructure. The EPC9178 combines GaN technology with a dedicated controller to deliver its performance and reliability. Operating at 450 kHz minimizes the size of passive components, resulting in a lightweight and space-saving solution with 98% peak efficiency. Powered by 100 V-rated EPC2306 eGaN® FETs, the EPC9178 offers an on-resistance of 3.8 mΩ and reduced switching losses compared to silicon MOSFETs. The integrated LM5177 controller from Texas Instruments reduces design complexity and component count. It operates across an input voltage range of 30 V to 60 V, with selectable output voltages of 30 V, 45 V, and 60 V.

Strategic Gallium Nitride Technology Collaboration for Automotive

Learn more:
rohm.com

Industry News
2024-12-10

ROHM and TSMC have entered a strategic partnership on development and volume production of gallium nitride power devices for electric vehicle applications. The partnership will integrate ROHM's device development technology with TSMC's GaN-on-silicon process technology. The partnership builds on ROHM and TSMC's history of collaboration in GaN power devices. In 2023, ROHM adopted TSMC's 650 V GaN high-electron mobility transistors (HEMT), whose process is increasingly being used in consumer and industrial devices as part of ROHM's EcoGaN series.

Sixteen MOSFETs in specific Package

Learn more:
nexperia.com

Product Release
2024-12-09

Nexperia launched sixteen 80 V and 100 V power MOSFETs in the copper-clip CCPAK1212 package for high power density. The copper-clip design provides high current conduction, reduced parasitic inductance, and excellent thermal performance. These features make the devices well-suited for motor control, power supplies, renewable energy systems, and other power-hungry applications. The range also includes application-specific MOSFETs (ASFETs) designed for AI server hot-swap functions. With top-side and bottom-side cooling options, these MOSFETs are supported by JEDEC registration. The benchmark PSMN1R0-100ASF is a 0.99 mΩ 100 V power MOSFET capable of conducting 460 A and dissipating 1.55 KW of power, yet in a CCPAK1212 package footprint that occupies 12 mm x 12 mm of board space. The PSMN1R0-100CSF offers similar statistics in a top-side cooled version. This is enabledby the internal construction of the devices. The "CC" in CCPAK1212 stands for copper clip, meaning that the power MOSFET silicon die is sandwiched between two pieces of copper, the drain tab on one side and the source clip on the other., which means that wire bonds are entirely eliminated.

Acquisition of SiC JFET Business

Learn more:
onsemi.com

Industry News
2024-12-09

onsemi announced that it has entered into an agreement to acquire the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, including the United Silicon Carbide subsidiary, from Qorvo. The acquisition will complement onsemi's extensive EliteSiC power portfolio and enable the company to address the need for high energy efficiency and power density in the AC-DC stage in power supply units for AI data centers. Additionally, the move will accelerate onsemi's readiness for emerging markets such as EV battery disconnects and solid-state circuit breakers (SSCBs). "As AI workloads become more complex and energy-intensive, the importance of reliable SiC JFETs that deliver high energy efficiency and are able to handle high voltages will continue to increase," said Simon Keeton, group president and general manager of the Power Solutions Group, onsemi. "With the addition of Qorvo's industry leading SiC JFET technology, our intelligent power portfolio offers our customers yet another solution to optimize energy consumption and increase power density."

Hot-Swap/E-Fuse

Learn more:
hmisemi.com

Product Release
2024-12-05

HMI released the HL8520E, a hot-swap/E-Fuse device designed to offer protection and power control for sensitive load circuitry. The HL8520E is designed to protect systems from input transients, shorts, and voltage spikes that could damage load circuitry, while managing power delivery to enhance reliability. With an input voltage range of 2.7 V to 16 V, it supports both low- and high-voltage systems, making it suitable for diverse applications. The device can also handle up to 20 A of output current. Featuring an integrated MOSFET with an R_DS(on) of 2.8 mΩ, the HL8520E reduces conduction losses while improving power efficiency, and thermal performance. It includes several protection features, such as over-current protection (OCP), short-circuit protection (SCP), thermal shutdown (TSD), damaged MOSFET detection, over-voltage protection (OVP), and under-voltage lockout (UVLO), safeguarding both the device and the load from electrical faults. For smoother system operation, the HL8520E allows for an external adjustable soft start, enabling controlled inrush current during startup. Additionally, the device provides configurable current limits. The response time of less than 200 ns for short-circuit protection helps detecting and mitigating fault conditions. The device comes in an LGA-26 package measuring 4 mm x 4 mm.

Excellent Performance Award

Learn more:
asahi-kasei.com

Industry News
2024-12-05

Asahi Kasei received a 2024 TSMC Excellent Performance Award for its Pimel™ photosensitive Polyimide material, in recognition of its "Excellent Technology Collaboration and Production Support in Advanced Packaging" at the 2024 Supply Chain Management Forum held by Taiwan Semiconductor Manufacturing. TSMC presents the Excellent Performance Award to suppliers that have made remarkable contributions to its technology leadership and manufacturing with advanced semiconductor processes over the past year. At the award ceremony, TSMC Chairman & CEO Dr. C.C. Wei thanked suppliers for delivering timely and high-quality professional services to drive continuous improvement of the supply chain and related industries. Pimel has been used for worldwide semiconductor applications such as buffer coatings, passivation layers for bumping, and dielectric layers for re-distribution bumping. With a new plant for Pimel scheduled to start operation this year, Asahi Kasei looks forward to providing swift and reliable supply of products that support advanced semiconductor manufacturing processes.

Laboratory for Transformer Prototypes

Learn more:
we-online.com

Industry News
2024-12-05

Wurth Electronics Midcom, German Branch, with EU headquarters in Munich, has opened a laboratory for the production of transformer prototypes at the Hightech Innovation Center in Munich-Freiham. The company, which specializes in transformers for switch-mode power supplies and customized inductive components, is part of the Würth Elektronik eiSos Group. In Munich, they produce custom magnetics prototypes. The main purpose of the new capacities is to promote intensive and transparent collaboration with customers. In-house prototype development and production enables the design engineers to also accompany their process in its implementation. All products are tested individually. The facility's technical equipment offers opportunities for R&D projects and patent development. Students and young talents also benefit from the site's equipment for research and final theses. In the future, prototypes of high-performance products and wireless power coils will also be produced here at the Hightech Innovation Center in Munich.

Partnership achieves over 99.6% Efficiency in GaN Inverters for Evs

Learn more:
visic-tech.com

Industry News
2024-12-05

VisIC Technologies and AVL announced a partnership aimed at advancing high-efficiency GaN inverter technology for the EV market. This collaboration intends to "provide automotive OEMs with power semiconductors that exceed silicon carbide (SiC) performance, while offering lower costs at device and system level". In a recent test conducted at AVL's facilities in Germany, an inverter based on VisIC's GaN-on-Silicon D³GaN components achieved an efficiency level of 99.67 % at 10 kHz, stunningly climbing to over 99.8 % efficiency at 5 kHz - which outperforms comparable SiC inverters by up to 0.5 % and is cutting energy losses by more than 60 %. VisIC's GaN-on-Silicon power devices can be produced in widespread 200 mm and 300 mm silicon foundries, which makes scaling production a straightforward process. Looking ahead, AVL and VisIC plan to expand their GaN-on-Si platform to include 800V GaN power modules, ensuring that their technology remains scalable and adaptable to the needs of the growing BEV market.

Donation to Charity instead of Christmas Gifts

Learn more:
vincotech.com

Industry News
2024-12-05

Vincotech has again opted to embrace the seasonal spirit of charity. In lieu of sending gifts to customers, the company is presenting 12,000 Euros to its partner in philanthropy, Plan International Germany. Donated on behalf of its workforce and customers, these funds will support a development project in Ecuador. Youngsters, and girls especially, in ten communities in the Cotopaxi and Santa Elena regions stand to benefit from this initiative. It aims to impart business, digital, and soft skills that will help get them off to a better start in working life. The project also provides health services to mothers and children. This is Vincotech's second contribution to the project. The company had staged a virtual reality challenge at the PCIM Europe trade fair in May 2024 to raise funds for Plan International Germany. Fairgoers rose to the occasion. Vincotech and its partners rewarded their efforts by pledging €15,000 to upskill young Ecuadorians and furnish health services.

SiC Partnership between Automotive OEM and Semiconductor IDM

Learn more:
st.com

Industry News
2024-12-03

STMicroelectronics and Renault Group's Ampere have entered a multi-year agreement, effective from 2026, for the supply of Silicon Carbide (SiC) power modules. The multi-year agreement is aligned with Ampere's strategy of working upstream with its partners. The two companies have worked together on the optimization of a new power module, the key element in the powerbox. The powerbox combines three SiC-based power modules, an excitation module, which provides the necessary electrical excitation to the motor or generator for controlling the magnetic field within the motor, and a cooling baseplate designed to dissipate heat from the back side of the power module, simplifying the thermal management and cooling process. It is designed for both 400 V and 800 V battery systems, with the latter allowing rapid charging from 10% to 80% in under 15 minutes.

Coupling Transmission Lines e. g. in PoE Systems

Learn more:
we-online.com

Product Release
2024-12-02

Würth Elektronik has expanded its WE-BAL series of baluns. The components for coupling symmetrical and asymmetrical transmission lines feature improved materials and manufacturing processes, and now cover wider frequency ranges from 673 MHz to 5900 MHz. In applications, such as antenna systems, audio and video devices, wireless communication systems, PoE systems, and measuring instruments, it is necessary to couple symmetrical and asymmetrical transmission lines in such a way that prevents signal loss. The SMT baluns with symmetrical impedance ranging from 50 to 200 Ω are integrated in 0603 and 0805 packages and operate with an insertion loss of up to a maximum of 2.0 dB.

Acquisition in Current Sensor Business

Learn more:
isabellenhuette.de

Industry News
2024-12-02

Isabellenhütte Heusler has acquired Rathgeber as of December 1, 2024. Both companies have a long-standing business relationship: As an external manufacturing service provider, Rathgeber was entrusted by Isabellenhütte with the punching of resistance bands, from which the ISA-WELD resistor series for current measurement is manufactured. Isabellenhütte expects to gain a strategic advantage from the acquisition. Rathgeber specializes in the production of temperature regulators for various markets. Isabellenhütte can thus supplement its product portfolio in measurement technology, expand its manufacturing expertise and strengthen its competitiveness.

Explore the Benefits of GaN-Based Power Electronics in the latest eBook

Learn more:
mouser.com

Industry News
2024-11-27

Mouser Electronics announces an eBook in collaboration with Analog Devices and Bourns exploring the challenges and benefits of Gallium Nitride (GaN) technology in the pursuit of efficiency, performance, and sustainability. "10 Experts Discuss Gallium Nitride Technology" explores how GaN technology, which enables higher efficiency, faster switching speeds, and greater power density than silicon, is revolutionising power electronics. The advantages of GaN technology offer far-reaching implications across various industries, from automotive and industrial applications to consumer electronics and renewable energy. The eBook provides insights from experts from ADI, Bourns, and other companies on the benefits of GaN, the challenges first-time GaN designers might face, and how to best navigate the transition from silicon to GaN. The eBook also highlights relevant products from ADI and Bourns, including GaN controllers and drivers, power inductors, and more.

Automotive-Grade SiC MOSFETs in TC3PAK Package

Learn more:
inventchip.com.cn

Product Release
2024-11-27

Inventchip Technology released four automotive-grade SiC MOSFETs in the TC3PAK package: IV2Q12080K1Z, IV2Q12040K1Z, IV3Q12035K1Z and IV3Q12021K1Z. They are rated at 1200 V with resistance values of 80 mΩ, 40 mΩ, 35 mΩ and 21 mΩ respectively. The TC3PAK package, designed for topside cooling, boasts a 125 mm² metal tab surface, significantly enhancing heat dissipation capabilities. Compared to the traditional TO-263/D2PAK package, the TC3PAK's heat dissipation area is over 200 % larger, effectively halving the thermal resistance between the case and the heatsink. This design not only improves thermal management but also facilitates a more efficient heat dissipation process. Unlike TO-263/D2PAK packages that depend on PCB for heat dissipation and conduction, TC3PAK allows direct heat conduction to a heatsink via its topside metal tab. Furthermore, the TC3PAK package is 23 % thinner, measuring under 3.6 mm in height, compared to the TO-263/D2PAK, which makes it more suitable for low profile designs. Its large lead frame can support a large die, such as a 5 mm x 6 mm die, or multiple dies, providing ample space for future power upgrades without the necessity for a new package format. The TC3PAK package is engineered for surface mounting with a top-side connection to an external heatsink and facilitates the automatic assembly of the PCB-power devices-heatsink stack.

Linear Hall Effect IC for General Use Devices

Learn more:
ablic.com

Product Release
2024-11-26

ABLIC's S-5611A is a programmable linear Hall effect IC which achieves high speed response of 1.25µs as well as low noise performance of 0.09µT/√Hz, for accurate measurement of even minute current fluctuations, allowing it to contribute to improving inverter control performance. The product is also equipped with a frequency band selection function which makes it possible to select 400kHz, 200kHz, or 100kHz with just this single IC. The noise generated by the IC can be reduced even further by selecting a lower frequency. It also features a function which compensates for magnetic core characteristic changes caused by temperature, allowing for high core current sensor accuracy in a wide range of temperatures. These characteristics contribute to reduced power consumption and lower CO₂ emissions and make this an ideal IC for building current sensors to be equipped in environmentally friendly, highly energy efficient, high-accuracy inverters and DC-DC converters.

Family of Full-Bridge Transformer Drivers for compact Gate Driver Supplies

Learn more:
infineon.com

Product Release
2024-11-26

Infineon introduced the EiceDRIVER™ Power 2EP1xxR family of full-bridge transformer drivers for IGBT, SiC and GaN gate driver power supplies. With the 2EP1xxR family, the company provides a solution for isolated gate driver supply. By using the devices, asymmetrical output voltages can be implemented to supply isolated gate drivers in a cost-effective and space-saving manner. This makes the 2EP1xxR particularly suitable for industrial or consumer applications requiring isolated gate drivers, including solar applications, electric vehicle charging, energy storage systems, welding, uninterruptible power supplies and drive applications. The 2EP1xxR family comes in a compact TSSOP8 pin package with power integration and optimizations to generate an asymmetric output voltage. The family is optimized for asymmetric gate driver supply through its unique duty-cycle adjustment capability. The devices support an input voltage range up to 20 V. They also offer integrated temperature, short-circuit and undervoltage lockout (UVLO) protection to prevent unwanted system faults. The 2EP1xxR family is available in the following four product variants: 2EP100R and 2EP101R are optimized for low component count designs for IGBT and SiC MOSFET gate driver power supplies. 2EP110R allows fine adjustment of the duty-cycle to match the output voltage ratio to the application requirements of SiC and GaN power switches. 2EP130R is optimized for highly flexible designs to meet different application requirements. The device offers 5-stage overcurrent protection, 41 selectable switching frequencies or synchronization with external PWM for transformer matching, and 41 selectable duty-cycle options to adjust the output voltage.

Semiconductor Company cooperates with Automotive Tier-1 Supplier

Learn more:
rohm.com

Industry News
2024-11-26

ROHM Semiconductor and Valeo announced they are collaborating to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Silicon Carbide (SiC) molded module TRCDRIVE™ pack to Valeo for future powertrain solutions. Valeo focuses on efficient, electrified mobility across various vehicle types and markets from the smallest one (ebikes), through the mainstream (passenger cars) to the largest one (eTrucks). ROHM and Valeo have been collaborating since 2022, initially focusing on technical exchanges aimed at improving the performance and efficiency of the motor inverter. By refining power electronics, both companies aim to offer optimized cost/performance by delivering higher energy efficiency, reducing heat generation thanks to an optimized cooling and mechatronic integration, and increasing overall reliability with a SiC packaging. Valeo will start supplying a first series project in early 2026.

High Speed & High Power DC Electronic Load

Learn more:
itechate.com

Product Release
2024-11-22

One of the features of the IT8900G/L series high power DC electronic load from ITECH is its fast current dynamic response. Compared with its predecessor, the current rise/fall speed of this device has been increased by 3-4 times, ensuring that users are able to capture even smaller fluctuations in real time when dealing with complex load changes. Especially in scenarios that require high-speed response, such as testing server power supplies, DC/DC modules, and on-board chargers (OBCs), theIT8900G/L demonstrates its processing capabilities. The IT8906G-150-600 model can provide 0…600 A under 30 kHz dynamic band load conditions. To further optimize stability in high-frequency testing, ITECH has also introduced a low-inductance test line, which significantly reduces electromagnetic interference during rapid current changes for efficient and accurate signal transmission. The device supports load testing down to 0.075 V / 60 A and 0.75 V / 600 A with an internal resistance of 0.7 mΩ, making the IT8900G/L a test tool for fuel cells, supercapacitors, and solar cells.

"A much better Way to conduct Heat away from the Die" – especially in GaN Applications

Learn more:
q-p-t.com

Industry News
2024-11-21

QPT has just filed a patent for a way to attach dies to the heat spreaders or substrates which are typically Aluminium Nitride (AlN), which it calls qAttach™. This is said to provide "a much better way to conduct heat away from the die and also increases reliability" as the assembly process places less stress on the substrates, which is one of the biggest challenges the high-power semiconductor packaging industry faces. QPT developed this qAttach process for use with the Gallium Nitride (GaN) transistors that it uses in its electric motor control designs to enable them to handle the huge amounts of waste heat that results from using them for high power, high voltage applications and at high frequency. GaN transistors are now being made that are rated for high voltages but the die size is relatively small for high voltage transistors, which means there is less surface area to remove heat from. As a result, they are often down rated to enable them to function without overheating.qAttach solves this problem as now significantly more heat can be efficiently removed from the die so that it will not overheat. This opens up GaN to now be efficiently used for next generation, high power, high voltage applications in automotive, industrial motors and to finally deliver on the promise of low cost, high voltage GaN transistors.

600 W Open Frame Power Supply for Medical and Industrial Applications

Learn more:
murata.com

Product Release
2024-11-21

Murata Manufacturing has introduced the PQC600 open-frame AC to DC power supply, which caters to the needs of the latest medical and industrial applications, such as hospital beds, dentist chairs, medical equipment, and industrial process machinery. It offers 600 W of power within a package that is less than 1U in height and is certified to the IEC 60601-1 Edition 3 medical safety standard, which includes 2 Means of Patient Protection (MOPP) from primary to secondary, 1 MOPP from the chassis to ground and 1 MOPP from output to chassis. Additionally, the PQC600 complies with the IEC 60601-1-2 4th Edition for EMC standards, ensuring robust electromagnetic compatibility, and is suitable for use with medical devices that have Type B or Type BF applied parts. With a 600W forced-air cooling design, it achieves an efficiency of 95 % at full load. The power supply features an interleaved Power Factor Correction (PFC) and back-end synchronous rectification. Furthermore, the power supply includes a droop current sharing feature, enabling multiple units to be configured in parallel for greater power scalability.

Chief Operating Officer started in Office

Learn more:
rohde-schwarz.com

People
2024-11-21

Effective November 1, 2024, Markus Fischer, the former Executive Vice President Operations, has been appointed to the Rohde & Schwarz Executive Board. As Chief Operating Officer (COO), he will collaborate with Christian Leicher (CEO) and Andreas Pauly (CTO) to continue to keep the company on course for growth in these challenging times. As Chief Operating Officer, Markus Fischer will be responsible for most of the operative business of Rohde & Schwarz. Andreas Pauly, who joined the Executive Board as Chief Technology Officer in October 2023, will retain his primary responsibility for innovation, research and development. Managing Partner Christian Leicher will continue to head the Executive Board as President and CEO. Markus Fischer (44) joined the technology group in 2011 as Head of Corporate Material Sourcing at Munich headquarters. After another management role at Rohde & Schwarz Messgerätebau GmbH in Memmingen, he assumed overall responsibility for the group's supply chain in 2017. In July 2020, he was appointed Executive Vice President Operations, becoming a member of Corporate Management. In that role, Fischer was responsible for all Rohde & Schwarz production activities as well as the supply chain and procurement. The technology group's five production plants have a high degree of vertical integration. As Executive Vice President Operations, Fischer focused above all on improving such key aspects as efficiency, flexibility and scalability. Consequently, his division not only ensured delivery capability in times of uncertain supply chains, but also contributed substantially to the stability of Rohde & Schwarz.

Programmable Mixed-Signal ICs, Including Low-Power Device with 14-Bit SAR ADC

Learn more:
renesas.com

Product Release
2024-11-20

Renesas announced AnalogPAK ICs, including lower power and automotive-qualified devices along with the industry’s first programmable 14-bit SAR ADC (Successive-Approximation Register Analog-Digital Converter). AnalogPAK devices are part of Renesas’ GreenPAK Family of Programmable Mixed-Signal Matrix products: NVM programmable devices integrating many system functions while minimizing component count, board space, and power consumption. GreenPAK and AnalogPAK ICs deliver functional replacement of mixed-signal standard products and stand-alone discrete circuits. They also provide hardware supervisory functions for SoCs and microcontrollers. GreenPAK and AnalogPAK devices are suited for consumer electronics, computing, white goods, industrial, communications, and automotive. Using Go Configure Software Hub and the GreenPAK Development Kit, designers can create and program a custom circuit in minutes. For example, the SLG47011 AnalogPAK device includes several D/A features including programable multichannel 14-bit SAR ADC with Programmable Gain Amplifier (PGA). The SLG47011 also has user-defined power saving modes for all macrocells that enable designers to switch off some blocks in sleep mode and therefore reduce power consumption to the µA level. The SLG47011 can be used to extend the performance of, or to offload an MCUs. It can also be used in conjunction with an MCU to replace a complex analog front-end (AFE). Key functions supported by the SLG47011 include measurement, data processing, logic control and data output.

Tool-in Ceremony for Semiconductor Fab

Learn more:
samsung.com

Industry News
2024-11-18

Samsung Electronics held a tool-in ceremony for its semiconductor research and development complex (NRD-K) at its Giheung campus. About 100 guests, including those from suppliers and customers, were in attendance to celebrate the milestone. NRD-K broke ground in 2022 and is set to become a key research base for Samsung’s memory, system LSI and foundry semiconductor R&D. With its infrastructure, research and product-level verification will be able to take place under one roof. Samsung plans to invest about KRW 20 trillion (more than US-$ 14 billion) by 2030 for the complex in an area covering about 109,000 square meters within its Giheung campus. The complex will also include an R&D-dedicated line scheduled to begin operation in mid-2025. NRD-K will be set up with High NA extreme ultra-violet (EUV) lithography and new material deposition equipment aimed at accelerating the development of next-generation memory semiconductors such as 3D DRAM and V-NAND with more than 1,000 layers. In addition, wafer bonding infrastructure with innovative wafer-to-wafer bonding capabilities is also planned to dock.

Three Companies partner for Solar Inverter Designs

Learn more:
mouser.com

Industry News
2024-11-18

Mouser Electronics has partnered with onsemi and Würth Elektronik to address the growing solar inverter market. onsemi's Silicon Carbide (SiC) solutions address the needs for the highest levels of efficiency, reliability, and safety while their boost and inverter power integrated modules (PIMs) anchor the grid-interface electronics. Würth Elektronik's gate drivers, sensing control, and peripheral power products complete the system. E. g. the onsemi NXH40B120MNQ1 is an EliteSiC PIM containing a dual full SiC boost stage. The Würth Elektronik WE-AGDT high-power auxiliary gate drive transformers feature unipolar and bipolar outputs, making them suitable for powering state-of-the-art SiC MOSFET gate drivers up to 6W of power as well as IGBT and power MOSFETs.

A very short Look back at electronica 2024

Learn more:
electronica.de

Event News
2024-11-15

From November 12 to 15,2024 a total of 3,480 exhibitors presented their innovations across the entire spectrum of electronics to about 80,000 visitors at the electronica trade fair in Munich, Germany. In addition to sustainability, key topics such as artificial intelligence, the future of mobility, and the development of young talent sparked discussions at the exhibition stands and at the supporting program. The equally successful SEMICON Europa took place concurrently in two of the 18 halls. The organizer, Messe München, is “delighted that the trade fair was once again held at the same high level as before the pandemic and that the atmosphere was very positive despite the challenging times”. In order to attend electronica show, which had its debut exactly 60 years before, 3,480 exhibitors traveled from 59 countries and regions, with 76 percent of them from abroad. There were around 80,000 visitors from around 100 countries and regions. The share of international visitors totaled 54 percent. After Germany, the top 10 visitor countries were: Italy, China, France, Austria, United Kingdom, Switzerland, USA, Spain, Netherlands and Poland.
Some trivia: Roland R. Ackermann, the Correspondent Editor Bavaria of Bodo’s Power Systems, had already visited the very first electronica show 60 years ago while he was delighted to greet so many friends and business friends at this year’s electronica show as well. The next electronica will take place from November 10 to 13, 2026.

GaN Design and Development Center in Ottawa, Canada

Learn more:
wise-integration.com

Industry News
2024-11-15

The French company Wise-integration, which is active in digital control of gallium nitride (GaN) and GaN ICs for power conversion, has opened its North American Design & Development Center in Ottawa, Ontario, Canada. Led by Christian Cojocaru and staffed by experts in analog and digital technology design, the center will drive the development of the company’s design portfolio for the next generations of WiseGan®. By maximizing the high-frequency capabilities of GaN without added power losses, the next generations of the two product lines are said to “enable significant reductions in system size and cost, while boosting overall conversion efficiency”. Since its launch in 2020, the fabless company has established more than 20 patent families for its two core product lines. WiseGan includes GaN power integrated circuits designed for high-frequency operation in the MHz range, integrating features that streamline implementation with digital control. WiseWare is a 32-bit, MCU-based AC/DC digital controller optimized for GaN-based power-supply architectures. The company recently announced the launch of a subsidiary in Hong Kong.

Supercaps under Development

Learn more:
schurter.com

Product Release
2024-11-14

Supercaps, also known as supercapacitors, are a special type of energy storage device that combine certain properties of batteries with those of capacitors. In this way, they can store enormous amounts of energy and release it again very quickly, which makes them particularly valuable for many applications. While conventional capacitors store energy by separating electric charges in an electric field and are characterized by their high power density, they have a very low energy density and are therefore not suitable for long-term applications. Batteries, on the other hand, store energy through electrochemical reactions, which gives them a high energy density and therefore the ability to release energy over the long term. However, their power density is low and they are unsuitable for fast charging and discharging cycles. Supercapacitors close this gap by offering a higher energy density than normal capacitors and a higher power density than batteries, making them ideal for applications with short charge and discharge cycles. Schurter is in the process of developing standard and application-specific supercapacitor products.

DC/DC Converters for Industrial and Railway Environments

Learn more:
cui.com

Product Release
2024-11-13

CUI announces two high-performance isolated DC/DC converters, the PRC300 and 600 series, both designed with 4.2 kV isolation to support engineers in e-mobility, railway, and industrial industries. The PRC300 series, which is UL/EN/IEC 62368-1 certified, has several special features reinforced insulation and baseplate cooling. The PRC600 series offers 600 W of power in a compact brick package and positive and negative logic options, which is well-suited for a variety of industrial and high-voltage applications. Additional features include remote ON/OFF control and output voltage trimming. The industry standard half and full brick packages both offer a high input voltage range of 180 to 400 V_DC and an operating temperature ranging between -40 and +100 °C. The converters provide several protection features, including over-current, over-temperature, over-voltage, short circuit, and input under-voltage protections. In addition, they meet EN 61373 and EN 45545-2.

Linear FET 2 MOSFET for Hot-Swap and Battery Protection

Learn more:
infineon.com

Product Release
2024-11-13

The safe hot-swap operation in AI servers and telecom requires MOSFETs with a robust linear operating mode as well as a low R_DS(on). Infineon Technologies addresses this challenge with its OptiMOS™ 5 Linear FET 2 – a “MOSFET designed to provide the ideal trade-off between the R_DS(on) of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET”. The device prevents damage to the load by limiting the high inrush current and ensures low losses during operation. Compared to the previous generation (the OptiMOS Linear FET), the OptiMOS Linear FET 2 offers improved SOA at elevated temperatures and reduced gate leakage current, as well as a wider range of packages. This allows for more MOSFETs to be connected in parallel per controller, reducing bill-of-material (BOM) costs and offering more design flexibility due to the extended product portfolio. The 100 V OptiMOS 5 Linear FET 2 is available in a TO-leadless package (TOLL) and offers a 12 times higher SOA at 54 V at 10 ms and 3.5 times higher SOA at 100 µs compared to a standard OptiMOS 5 with similar R_DS(on). The latter improvement is particularly important for the battery protection performed inside the battery management system (BMS) in case of a short circuit event. This enables high power density, efficiency, and reliability for battery protection which are used in a wide range of applications including power tools, e-bikes, e-scooters, forklifts, battery back-up units and battery-powered vehicles.

Collaboration to Advance Plug & Charge

Learn more:
vector.com

Industry News
2024-11-13

Vector and Hubject now collaborate to further advance the Plug & Charge (PnC) technology. The aim is to simplify the electric vehicle (EV) charging process. With more than 2.6 million PnC-ready vehicles already on the market and more EVs on the horizon, the partnership helps to accelerate the adoption and implementation of PnC technology. Through this collaboration, automotive OEMs and charging station manufacturers can now obtain the Hubject QA (Pre-Production) and Production Certificates via the Vector Security Manager with the latest release of the development and test tool CANoe Version 18 SP3. The Vector Security Manager is the link between the Vector tools and the OEM-specific security implementations. With it, security functions can be used uniformly in the tools. Hubject QA and Production Certificates are essential for testing EVs and Electric Vehicle Supply Equipment (EVSE) using the CANoe Test Package EV or CANoe Test Package EVSE from Vector. This integration ensures that both the vehicles and the charging stations meet the ISO 15118 standard of interoperability, conformity and market readiness. PnC offers a seamless user experience. It eliminates the need for physical cards or mobile apps to authenticate and initiate charging.

Cooperation for Development of Sensor ICs with Functional Safety

Learn more:
novosns.com

Industry News
2024-11-13

Novosense Microelectronics and Continental Automotive Technologies have signed a memorandum to enhance strategic cooperation in the development of sensor ICs with functional safety, as well as for the global integration of Novosense’s products within Continental’s worldwide platforms. Products being co-developed include those for safety functions and system reliability – from airbag triggers to battery pack monitors. Novosense is a member of the AEC and an active developer for the global automotive industry. It has implemented an extensive R&D program for the sector that leverages a system-level understanding of automotive electronics, as well as a reliable product delivery supply chain.

Automotive grade residual Current Monitoring Sensor

Learn more:
lem.com

Product Release
2024-11-12

LEM has designed an automotive grade residual current monitoring (RCM) type B sensor for bi-directional OBCs with ASIL B capabilities according to ISO26262 for transformer-less on-board chargers (OBCs). This sensor, called CDT, complies with all the relevant safety standards. The RCM type B sensor enables designers to react to the new ISO5474 Part 2 standard for AC power transfer. The standard focuses on electrically propelled road vehicles and outlines the functional and safety requirements for power transfer between the vehicle and an external electric circuit using AC. Part of a series that operates in conjunction with ISO5474 Part 1, the new standard covers conductive charging requirements for modes 2 and 3 according to IEC 61851-1, reverse power transfer through on-board standard socket-outlets or EV plugs, and voltages up to 1000V AC. The CDT detects differences in current between two points, identifying such faults as short circuits and enabling rapid isolation of faulty sections to prevent damage. LEM’s CDT sensor is suited for RCM type B for bi-directional OBCs, where residual currents are detected and monitored, including AC and DC leakage currents. Using LEM’s patented fluxgate technology the CDT sensor offers a level of accuracy of ± 0.5 mA @ 5 mA. The device also provides functions on the secured Serial Peripheral Interface (SPI) bus including dynamic fault selection, monitoring of T°C, leakage value and supply monitoring, but it also provides diagnostic functions, and it is able to work equally effectively with single-phase and 3-phase AC.

SiC Schottky Barrier Diodes for High-Voltage xEV Systems

Learn more:
rohm.com

Product Release
2024-11-12

ROHM Semiconductor announced surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models (SCS2xxxNHR; AEC-Q101 qualified) for automotive applications such as onboard chargers (OBCs), which will soon be supplemented by eight additional models (SCS2xxxN) for industrial equipment such as FA devices and PV inverters. Adopting a specific package shape, it achieves a minimum creepage distance of 5.1 mm. These products utilize an original design that removes the center pin previously located at the bottom of the package, extending the creepage distance to a minimum of 5.1 mm, approximately 1.3 times greater than standard products. This minimizes the possibility of tracking (creepage discharge) between terminals, eliminating the need for insulation treatment through resin potting when surface mounting the device on circuit boards in high-voltage applications. Additionally, the devices can be mounted on the same land pattern as standard and conventional TO-263 package products, allowing the replacement on existing circuit boards. Two voltage ratings are offered – 650 V and 1200 V – supporting 400 V systems commonly used in xEVs, as well as higher voltage systems expected to gain wider adoption in the future.

120 V/4 A Half-Bridge Gate Driver for Automotive Applications

Learn more:
nexperia.com

Product Release
2024-11-12

Nexperia introduced a series of high-performance gate driver ICs designed for driving both high-side and low-side N-channel MOSFETs in a synchronous buck or half-bridge configuration. The automotive-qualified NGD4300-Q100 is suited for electronic power steering and power converters, while the NGD4300 has been designed for use with DC/DC converters in consumer devices, servers and telecommunications equipment as well as for micro-inverters used in various industrial applications. The floating high-side driver in these ICs can operate from bus voltages up to 120 V and use a bootstrap supply with an integrated diode – features which simplify overall system design and help to reduce PCB size. They can deliver up to 4 A (peak) source and 5 A of sink current to enable short rise and fall times even for heavy loads. The gate driver has a 13 ns delay and offers a channel-to-channel delay matching of 1 ns. These delays help to minimize dead-time by maximizing switching duty-cycle. 4 ns rise and 3.5 ns (typical) fall times help to deliver higher efficiency and support high frequency and fast system control. These gate drivers accept input control signals complying with both TTL and CMOS logic levels. These ICs are fabricated using a silicon-on-insulator (SOI) process. This allows the negative voltage tolerance of the HS pin to extend to -5 V, significantly reducing the risk of damage caused by system parasitic component and unexpected spikes. The NGD4300 and NGD4300-Q100 are available in a choice of DFN-8, SO-8 and HSO-8 packages to offer engineers the flexibility to trade-off between device size and thermal performance, depending on application requirements.

Semiconductor Product Distribution Center opened in Germany

Learn more:
ti.com

Industry News
2024-11-12

Texas Instruments has opened its product distribution center in Dreieich, Germany, close to Frankfurt, Germany. This distribution center includes 9,000 square meters of space and specific automation features. It has the capacity to quickly ship up to 7,500 orders per day. Located near Frankfurt Airport, the distribution center enables faster product delivery in Europe. The pick, pack and ship process is fully automated and orders are ready to ship within 15 minutes or less. Customers in central Germany can expect same-day product delivery, while next-day delivery is available to customers in most European countries. TI has been operating in Europe since 1956.

800 V GaN Inverter with 30 kW/l Power Density

Learn more:
camgandevices.com

Product Release
2024-11-12

Cambridge GaN Devices (CGD) and IFP Energies nouvelles (IFPEN), a French public research and training organization in the fields of energy, transport and the environment, have developed a demo which confirms the suitability of CGD’s ICeGaN®650 V GaN ICs in a multi-level, 800 V_DC inverter. The demo delivers a power density of 30 kW/l, which is greater than can be achieved by more expensive, state-of-the-art SiC-based devices. The inverter realization also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25 mΩ / 650 V ICeGaN ICs – 36 devices in total – in parallel. This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo features: a high voltage input of up to 800 V_DC, 3-phase output, a peak current of 125 A_RMS for 10 s or 180 A_Peak and a continuous current of 85 A_RMS continuous (120 A_Peak). The improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. As GaN transistors can operate at much higher frequencies than silicon transistors, the iron losses in the motor, particularly in the case of machines with low inductances are reduced. The 3-level topology reduces EMI and enhances the reliability of the system. In terms of thermal management insulated metallized substrate boards featuring an aluminium core facilitate thermal dissipation for adequate operating temperatures, and this extends the lifespan of the system and associated GaN devices. The modular design facilitates scalability and adaptability for varying system requirements.

Facilitating SiC and GaN Power Testing

Learn more:
crea-test.com

Product Release
2024-11-12

The Italian company CREA (Collaudi Elettronici Automatizzati) – a subsidiary of Advantest Europe – presented its solution for a variety of power devices, including SiC and GaN power testing on wafer, single-die, substrate, PKG, and module, typically used in industrial and automotive applications. PCI (Probe Card Interface) technology, patented by CREA, is a high-volume manufacturing test solution designed to work seamlessly with the CREA MT tester family. This combination enables high-power static, dynamic, and short circuit testing for Si, SiC, and GaN bare dies, particularly in Known Good Die (KGD) applications. PCI hardware allows monitoring the power levels maintained by each probe card needle in real-time, allowing test engineers to predict potential Device Under Test (DUT) failures during the test phase. Whenever a device failure is predicted, the PCI can react immediately (within 300 ns) by shutting off the probe card's power supply, safeguarding the equipment hardware (probe card, instruments) and the DUT. The system supports voltages up to 10 kV with a current capability up to 15 kA.

IGBTs in several different Packages for up to 1700 V

Learn more:
microchip.com

Product Release
2024-11-12

Microchip Technology now offers its IGBT 7 devices in different packages, multiple topologies, as well as current and voltage ranges. The components are available in standard D3 and D4 62 mm packages, as well as SP6C, SP1F and SP6LI packages; they are intended for power applications in solar inverters, hydrogen ecosystems, commercial and agricultural vehicles and More Electric Aircraft (MEA). Many configurations are available in the following topologies: three-level Neutral-Point Clamped (NPC), three-phase bridge, boost chopper, buck chopper, dual-common source, full-bridge, phase leg, single switch and T-type. Devices can be provided with voltages ranging from 1200 V to 1700 V while currents range from 50 A to 900 A. Claimed to operate with a “lower on-state IGBT voltage (V_ce), improved antiparallel diode (lower V_f) and increased current capability” these components can enable lower power losses.

Efficient DC/DC Converters for Industrial, Railway and Challenging Environments

Learn more:
pduke.com

Product Release
2024-11-12

With its HAE300W series P-DUKE increases the output power capacity of its compact half-brick design DC/DC converter portfolio to up to 300 W. This series is engineered to fulfill the stringent requirements of industrial and railway (rolling stock) applications. Featuring a 4:1 input voltage range that spans 9 to 36, 18 to 75, and 40 to 160 V_DC, the HAE300W series is suited for various power systems across different regions. It offers a selection of output voltage options, including 5, 12, 15, 24, 28, 48, and 54 V_DC, with an adjustable output range of +10% to -20% using an external resistor. Equipped with several protective features, the HAE300W series takes care of system safety with over-current protection (hiccup mode), output over-voltage protection (hiccup mode), continuous and auto-recovery output short-circuit protection, input under-voltage lockout, output remote sensing, and remote control capabilities. It is certified to comply with industry standards such as IEC/EN/UL62368-1, EN 50155 and EN 45545. The HAE300W series meets MIL-STD 810F and EN 61373 standards for vibration and mechanical shock, and is operable at altitudes up to 5000 m.

1200 V SiC MOSFETs in Bare Die Format

Learn more:
toshiba.semicon-storage.com

Product Release
2024-11-12

Toshiba has developed the X5M007E120, a 1200 V SiC MOSFETs with an low on-resistance of 7.2 mΩ, which is particularly suited to applications within automotive traction inverters. The device has a V_DSS of 1200 V and is rated for a drain current (I_D) of 229 A continuously, with 458 A for pulsed operation (I_{D Pulse}). These AEC-Q100 qualified devices can operate with channel temperatures (T_ch) up to 175 °C. Engineering samples are expected to ship during 2025, with mass production samples scheduled to start in 2026.

Analog and Mixed-Signal Platform

Learn more:
onsemi.com

Product Release
2024-11-11

onsemi introduced the Treo Platform, an analog and mixed-signal platform built with Bipolar-CMOS-DMOS (BCD) process technology on an 65 nm node. This platform provides the foundation for a range of power and sensing solutions from the manufacturer including high-performance and low-power sensing, high-efficiency power management, and purpose-built communications devices. Using this single, scalable solution, users can accelerate product development for existing applications, and respond to emerging market opportunities. The Treo Platform features a modular, SoC-like architecture with a set of ever-evolving IP building blocks that make up the compute, power management, sensing, and communications subsystems. It offers digital processing capabilities and "better analog IP performance". With these capabilities, the platform can deliver local intelligence and compute for flexible configuration, as well as improve performance and accuracy in end applications. Additionally, the platform supports "the industry's widest voltage range of 1-90 V and operating temperatures up to 175 ° C", which allows engineers to integrate a range of low-to-high power functionality. Initial product families built on the Treo Platform are sampling now, including voltage translators, ultra-low-power AFEs, LDOs, ultrasonic sensors, multi-phase controllers, and single-pair Ethernet controllers. Through 2025, the semiconductor manufacturer will deliver new family members including: high performance sensors, DC/DC converters, automotive LED drivers, electrical safety ICs, connectivity, and more.

CGD and Qorvo collaborate on Motor Control Solutions

Learn more:
camgandevices.com

Industry News
2024-11-11

Cambridge GaN Devices (CGD) and Qorvo® have partnered "to bring together industry-leading motor control and power efficiency technologies" in the PAC5556A + ICeGaN® evaluation kit (EVK). This collaboration combines Qorvo's BLDC/PMSM motor controller/driver and CGD's ICeGaN ICs in a board that is claimed to "significantly improve motor control applications". By employing CGD's latest-generation P2 ICs, the PAC5556AEVK2 evaluation kit with 240 mΩ ICeGaN achieves up to 400 W peak performance without a heatsink, whilst the PAC5556AEVK3 with 55 mΩ ICeGaN hits 800 W peak with minimal airflow cooling. ICeGaN integrates essential current sense and Miller clamp elements. The PAC5556A + CGD GaN EVKs is said to "offer higher torque at low speeds and precise control", making them well-suited for white goods, ceiling fans, refrigerators, compressors and pumps. Target markets include industrial and home automation, especially where compact, high-efficiency motor control systems are required.

Motor Suite for simplified Motor Control Development

Learn more:
infineon.com

Product Release
2024-11-08

Infineon Technologies launched its Motor Suite dubbed ModusToolbox™, which is a solution of software, tools and resources for developing, configuring and monitoring motor control applications. With its ability to support different motor types, the solution intends to enable developers to bring high-performance motor control applications to market quickly and efficiently. The suite supports industrial, robotics, and consumer applications such as home appliances, HVAC, drones, and light electric vehicles. The suite streamlines development and testing, providing real-time parameter monitoring for relevant insights into motor performance, efficiency, and reliability. This enables engineers to identify issues, optimize designs, and enhance overall functionality. It also offers signal analysis, and customized status monitoring. ModusToolbox Motor Suite features automatic detection and recognition of supported boards and kits, real-time visualization and monitoring of motor control related signals. It also provides pre-configured algorithms and real-time monitoring of critical system parameters. Additionally, the solution offers algorithms to increase the control robustness across many motor types and applications. It currently includes out-of-the-box support for Infineon’s XMC7000 microcontrollers and will further expand its capability to include industrial MCUs, with PSOC™ Control integration confirmed for upcoming releases. It provides a graphical user interface for motor control development and an adaptable, hardware-abstracted motor control core library.

PLECS Conference 2025

Learn more:
plexim.com

Event News
2024-11-08

Join the next PLECS Conference about Embedded Code Generation. The speakers are engineers from industry, research, and academia who will present current applications in this field. Engage with experts and network with over 100 participants in the discussion and networking area. Besides that, take the opportunity to exchange ideas with Plexim developers. The conference language will be English. Note that this is an on-site only event. The participation fee will be 700.00 Euros or Swiss Francs (incl. 8.1% VAT) and can be paid by invoice or credit card. The Plexim staff is excited to welcome you again in Zurich, on March 4 and 5, 2025!

Galvanically isolated Gate Drivers provide Protection for IGBTs and SiC MOSFETs

Learn more:
st.com

Product Release
2024-11-07

STMicroelectronics' STGAP3S family of gate drivers for silicon-carbide and IGBT power switches provide a reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, withstanding 9.6 kV transient isolation voltage (VIOTM) with 200 V/ns common-mode transient immunity (CMTI). Suited for motor drives for industrial applications such as air conditioning, factory automation, and home appliances the drivers are also used in power and energy applications including charging stations, energy storage systems, power-factor correction (PFC), DC/DC converters and solar inverters. The STGAP3S product family includes different options with 10 A and 6 A current capability, each of them available with differentiated Under Voltage Lock-Out (UVLO) and desaturation intervention thresholds. This helps designers select the best device to match the performance of their chosen SiC MOSFET or IGBT power switches. The Desaturation protection implements an overload and short-circuit protection for the external power switch providing the possibility to adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive overvoltage spikes. The undervoltage-lockout protection prevents turn-on with insufficient drive voltage. The driver's integrated Miller Clamp architecture provides a pre-driver for an external N-channel MOSFET. The available device variants allow a choice of 10 A sink/source and 6 A sink/source drive-current capability with desaturation-detection and UVLO thresholds optimized for IGBT or SiC technology. The fault conditions of desaturation, UVLO and overtemperature protection are notified with two dedicated open drain diagnostic pins.

1200 V IGBTs for Automotive and Industrial Applications

Learn more:
rohm.com

Product Release
2024-11-07

ROHM has developed automotive-grade AEC-Q101 qualified 4^th Generation 1200V IGBTs for vehicle electric compressors and HV heaters as well as industrial inverters. The current lineup includes four models - RGA80TRX2HR / RGA80TRX2EHR / RGA80TSX2HR / RGA80TSX2EHR - in two discrete package types (TO-247-4L and TO-247N), along with 11 bare chip variants - SG84xxWN - with plans to further expand the lineup in the future. In case of a short circuit these devices provide a withstand time of 10 µs (T_j=25 °C) together with low switching and conduction losses while maintaining a withstand voltage of 1200 V. Its TO-247-4L package features 4 terminals, can accommodate an effective voltage of 1100 V in a 'Pollution Degree 2 environment' by ensuring adequate creepage distance between pins. High-speed switching is achieved by including a Kelvin emitter terminal, resulting in even lower losses. In fact, when comparing the efficiency of the new TO-247-4L packages with conventional and standard products in a 3-phase inverter, loss is reduced by about 24% compared to standard products and by 35% over conventional products.

New Sales Office and Service Center in Sydney, Australia

Learn more:
magna-power.com

Industry News
2024-11-07

Magna-Power Electronics has opened Magna-Power Electronics ANZ in Sydney, Australia. The establishment of the Sydney office enhances Magna-Power's local presence, providing dedicated support for existing and prospective customers in the region. With a product line ranging from 1.25 kW to over 10 MW and more than 400,000 product configurations, the company's solutions are well-suited to meet the varied power requirements of key Australian applications, including electrolyzers, defence, mining, water treatment, industrial power electronics, transportation, among many others. Leading the new office are industry veterans David Champion and Brian Chapman, who bring over 60 years of combined experience in electrical engineering and technology. The investment in the Sydney office is said to underscore the company's commitment to providing regional services to a wider customer base in the growing APAC market.

100 V Automotive-Grade Devices for Automotive LiDAR

Learn more:
innoscience.com

Product Release
2024-11-07

Innoscience has added two 100 V automotive-grade GaN devices. The company's INN100W135A-Q (R_DS(on),max = 13.5 mΩ) and smaller package INN100W800A-Q (R_{DS(on),max = 80} mΩ) are both certified to AEC-Q101 and optimized for LiDAR as well as for high power density DC/DC converters, and Class D audio applications in the automotive sector. The INN100W135A-Q and the ultra-compact INN100W800A-Q, with a WLCSP package measuring 2.13 mm x 1.63 mm and 0.9 mm x 0.9 mm respectively, offer advantages in terms of size and power efficiency. Both devices are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. Parameters like Q_g and Q_oss are also improved by 1.5 to 3 times over their silicon counterparts. This results in medium to long-range recognition capabilities of 200/300m.

60-V Variant of Power MicroModule Series

Learn more:
we-online.com

Product Release
2024-11-06

There's another generation of MagI³C-VDMM power modules from Würth Elektronik: The input voltage range gives the new MicroModule a resistance to voltage transients on the 48 V bus. The adjustable output voltage ranges from 0.85 to 6 V with currents up to 0.3 A. The extended input voltage range of the Variable Step Down MicroModule from 3.5 to 60 V now covers bus voltages from 5 to 48 V, opening up applications from Point of Load (PoL) to direct 48 V bus voltage connection. So the MagI³C-VDMM series is suited as a replacement for linear regulators, for example in the power supply of interfaces, sensors, microcontrollers, microprocessors, DSPs and FPGAs. Operational areas include industrial, testing and measurement technology, medical devices and point-of-load DC/DC applications. Its efficiency of up to 86 percent supports "cool design", allowing its use in a temperature range from -40 to +105 °C. To save energy, the power module can be set to sleep mode using an additional pin, and the quiescent current is up to 3 µA. The integrated sync feature allows multiple Micromodules to synchronize to an external frequency while simultaneously meeting the requirements of EMC standard EN55032/CISPR32 Class B for radiated and conducted interference with verified filter combinations. The selectively controllable "spread spectrum" feature improves the EMC behavior.

More News	Teaser	NewsID	NewsSection	Title	Text	Announced	AnnouncedMMM	Picture	PicturePath	WebLink	WebLinkText
German Company with lots of Presentations at APEC 2025	Würth Elektronik announced its participation as an...	12272	Event News	German Company with lots of Presentations at APEC 2025	Würth Elektronik announced its participation as an Emerald Partner at the 40th IEEE Applied Power and Electronics Conference and Exhibition (APEC). The exhibition will take place from March 17–19, 2025, at the Georgia World Congress Center in Atlanta, Georgia, with pre-show workshops held March 15–16. Celebrating its 40th anniversary, APEC has established itself as the leading conference for power electronics professionals across North America. This year's event will focus on innovation, collaboration, and advancements shaping the future of the industry. The conference begins with the 10th Annual Magnetics @ High Frequency Workshop, co-organized by PSMA and PELS, on Saturday before the exhibition, where Würth Elektronik's experts will present several insight presentations during this workshop: Throughout the APEC exhibition, Würth Elektronik will further five additional presentations. On top of this Würth Elektronik will also deliver three Exhibitor Presentations on the show floor, complemented by interactive demonstrations and technical showcases at Würth Elektronik's booth – including a photobooth for capturing memorable moments.	11.02.2025 11:00:00	Feb	news_2025-02-15_6.jpg	\images\news_2025-02-15_6.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=apec2025	we-online.com
Pilot Line for Power and more	The FAMES Pilot Line offers a complete set of tech...	12268	Industry News	Pilot Line for Power and more	The FAMES Pilot Line offers a complete set of technologies to develop advanced chip architectures. FAMES will open new research avenues for enhancing performance and lowering power consumption for mixed-signal circuits – and strengthening European sovereignty in microelectronics, CEA-Leti reported in a recent article. The FAMES Pilot Line focuses on five sets of technologies that will enable new chip architectures, and in terms of power this technology set is about small inductors to develop DC/DC converters for power-management integrated circuits (PMIC). The other four technology sets are FD-SOI for 10nm and 7nm, eNVM (embedded non-volatile memories), RF components and 3D integration technologies for 3D stacking. FAMES will provide open access to stakeholders across Europe and partner countries. Researchers, SMEs, and industrial companies can leverage the pilot line for circuit testing, design evaluation, and new technology development. The FAMES consortium that will support the initiative includes: the pilot line coordinator, CEA-Leti (France), imec (Belgium), Fraunhofer (Germany), Tyndall (Ireland), VTT (Finland), CEZAMAT WUT (Poland), UCLouvain (Belgium), Silicon Austria Labs (Austria), SiNANO Institute (France), Grenoble INP (France) and the University of Granada (Spain).	07.02.2025 07:00:00	Feb	news_2025-02-15_2.jpg	\images\news_2025-02-15_2.jpg	https://fames-pilot-line.eu/	fames-pilot-line.eu
Power Company's CEO is about to Retire	Power Integrations announced that Balu Balakrishna...	12271	People	Power Company's CEO is about to Retire	Power Integrations announced that Balu Balakrishnan, the company's CEO since 2002, will retire from that role once a successor is in place. To ensure a smooth transition he will remain CEO until a successor is in the office. The company's board of directors has retained an executive search firm to assist in identifying its next CEO; both internal and external candidates will be considered. Mr. Balakrishnan, 70, intends to serve as executive chairman of the company's board for as long as is needed to ensure a smooth transition to his successor, and is expected to remain on the board of directors thereafter. Balu Balakrishnan joined Power Integrations in 1989, shortly after its formation, from National Semiconductor, where he was a product-line manager. He is the inventor of many Power Integrations products including TOPSwitch™, the company's first commercial product, followed by TinySwitch™, the first product to feature the company's EcoSmart™ technology for reducing standby-power waste. Mr. Balakrishnan served in a succession of executive roles before being named president and chief operating officer in 2001. In 2002 he was named CEO and joined the company's board of directors. He has been awarded more than 200 U.S. patents and has received numerous awards including the Discover Award for Technological Innovation in recognition of the environmental benefits of EcoSmart technology.	06.02.2025 10:00:00	Feb	news_2025-02-15_5.jpg	\images\news_2025-02-15_5.jpg	https://investors.power.com/news/news-details/2025/Power-Integrations-CEO-Balu-Balakrishnan-to-Retire/default.aspx	power.com
High-Voltage, Wide-Bandwidth Differential Probe	Yokogawa Test & Measurement Corporation released i...	12278	Product Release	High-Voltage, Wide-Bandwidth Differential Probe	Yokogawa Test & Measurement Corporation released its PBDH0400 series differential probe with a maximum input voltage of 2000 V and a frequency bandwidth of 400 MHz. PBDH0400 series differential probes are able to deliver the measurements required for developing the next generation of higher speed power devices. Initially, two models of the PBDH0400 series will be available: the 702922 model with a maximum input voltage of 2000 V, and the 702921 with a maximum input voltage of 1000 V. The PBDH0400 series features the Yokogawa probe interface, which does not require an external power supply when connected to a Yokogawa oscilloscope. Furthermore, the probe attenuation ratio is automatically set through the interface so that measurement can start immediately after connection to the instrument. Combining the PBDH0400 with Yokogawa's 12-bit DLM5000HD or DLM3000HD oscilloscopes enables more accurate waveform measurements. Major target markets are in-vehicle electronic systems including inverters and motors as well as power electronics such as electronic devices, inverters, and power generation devices. Domestic electronic systems like household appliances and air conditioners – complemented by mechatronics, including industrial devices. The probes are suited for evaluation of high-speed, high-voltage switching signals exhibited by SiC devices and IGBTs within EV inverters as well as for power analysis and operational confirmation of SiC and GaN based power electronics.	04.02.2025 11:30:00	Feb	news_2025-02-15_12.jpg	\images\news_2025-02-15_12.jpg	https://tmi.yokogawa.com/news/press-releases/2025/yokogawa-test-measurement-releases-pbdh0400-series-high-voltage-wide-bandwidth-differential-probe/	tmi.yokogawa.com
Strategic Partnership for the North American market	The current transducers from Danisense can be sour...	12269	Industry News	Strategic Partnership for the North American market	The current transducers from Danisense can be sourced in the US through GMW Associates "at very short lead times". With its know-how in sensors, transducers, test & measurement, instrumentation, as well as magnetics, GMW is able to provide Danisense's products to its customer base. GMW and Danisense share a partnership that already spans over more than 10 years. GMW has been calibrating current transducers for more than fifteen years.	30.01.2025 08:00:00	Jan	news_2025-02-15_3.jpg	\images\news_2025-02-15_3.jpg	https://gmw.com/electric-current-measurement/	gmw.com
GaN predicted to reach Adoption Tipping Points in multiple Industries	In its 2025 predictions – GaN power semiconductors...	12267	Industry News	GaN predicted to reach Adoption Tipping Points in multiple Industries	In its 2025 predictions – GaN power semiconductors, Infineon highlights that "gallium nitride will be a game-changing semiconductor material revolutionizing the way we approach energy efficiency and decarbonization across consumer, mobility, residential solar, telecommunication, and AI data center industries". The relevance of comprehensive power systems will increase with GaN manifesting its role due to its benefits in efficiency, density, and size. Given that cost-parity with silicon is in sight, Infineon expects to see an increased adoption rate for GaN this year and beyond. Powering AI will be highly depending on GaN. By leveraging GaN, AI data centers can improve power density, which directly influences the amount of computational power that can be delivered within a given rack space. While GaN presents clear advantages, hybrid approaches combining GaN with Si and SiC are considered "ideal for meeting the requirements of AI data centers and achieving the best trade-offs between efficiency, power density and system cost". In the home appliance market, Infineon expects GaN to gain significant traction, driven by the need for higher energy efficiency ratings. Together with high-end SiC solutions, GaN will also enable more efficient traction inverters for both 400 V and 800 V EV systems, contributing to an increased driving range. In 2025 and beyond, robotics will see widespread adoption of GaN supported by the material's ability to enhance compactness, driving growth in delivery drones, care robots and humanoid robots. Integrating inverters within the motor chassis eliminates the inverter heatsink while reducing cabling to each joint/axis and simplifying EMC design.	30.01.2025 06:00:00	Jan	news_2025-02-15_1.jpg	\images\news_2025-02-15_1.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFPSS202501-049.html	infineon.com
Constant Current Stepper Motor Driver IC	Toshiba Electronics Europe has introduced the TB67...	12282	Product Release	Constant Current Stepper Motor Driver IC	Toshiba Electronics Europe has introduced the TB67S559FTG 50V/3.0A stepper motor driver IC that supports constant current control with built-in current detection. Housed in a 5.0 mm x 5.0 mm QFN32 package, the TB67S559FTG operates in the 8.2 V to 44 V output voltage range to cover 12 V, 24 V, and 36 V applications, including office automation (OA) equipment, point of sale (POS) terminals, vending machines, surveillance cameras, industrial equipment, and more. The TB67S559FTG represents a voltage and current rating upgrade to its pin/function compatible predecessor, the 40 V / 2.0 A TB67S539FTG, and offers an R<sub>DS(on)</sub> of 0.4 Ω (typ., covering the upper and lower transistor). When in sleep mode, the device draws a maximum current of 1 µA. The TB67S559FTG eliminates the need for external current sense resistors having built-in current detection circuitry. The built-in charge pump circuit does not require an external capacitor.	28.01.2025 15:30:00	Jan	news_2025-02-15_16.jpg	\images\news_2025-02-15_16.jpg	https://toshiba.semicon-storage.com/eu/company/news/2025/01/motor-driver-20250128-1.html	toshiba.semicon-storage.com
Power Factor Correction Chokes for 1-5 kW Range	ITG Electronics offers several mid-tier power fact...	12280	Product Release	Power Factor Correction Chokes for 1-5 kW Range	ITG Electronics offers several mid-tier power factor correction chokes (PFCs) suitable for applications with continuous conduction requirements in the 1,000-5,000 W range. The company's PFC219167D Series are designed to meet AC to DC converter needs for the industrial, equipment and automotive sectors. PFC219167D Series solutions are viable for inductance ranges from 107–2,200 µH, and can handle DC voltage surges up to 400 V. With a maximum length/width of 55.5 mm x 55.5 mm and a maximum height of 42.5 mm the PFC chokes also offer an alloy powder-based DIP Inductor. The chokes can handle up to 61 A with approximately 50% roll off.	27.01.2025 13:30:00	Jan	news_2025-02-15_14.jpg	\images\news_2025-02-15_14.jpg	https://www.itg-electronics.com/en/series/946	itg-electronics.com
POL Converters in SIP-3 Packages	TRACO Power released the TSR 2N & TSR 3N POL conve...	12277	Product Release	POL Converters in SIP-3 Packages	TRACO Power released the TSR 2N & TSR 3N POL converters, which are members of a step-down switching regulator series designed as a drop-in replacement for any TO-220 package linear regulators. Complementing TRACO Power's latest generation of converters these models offer a DC input range of 4.6 – 36 V. The design allows full load operation from –40 °C to +95 °C ambient without the need of a heat sink or forced cooling. The TSR 2N and TSR 3N switching regulators feature short circuit protection, current limitation and under voltage lockout for a broad application range in many environments, especially high-volume projects where the series will help to reduce production costs. The devices operate with efficiencies of up to 95 %.	27.01.2025 10:30:00	Jan	news_2025-02-15_11.jpg	\images\news_2025-02-15_11.jpg	https://www.tracopower.com/int/txo	tracopower.com
Step-Down DC/DC Converters with “lowest Quiescent Current”	Nexperia introduced a series of step-down DC/DC co...	12264	Product Release	Step-Down DC/DC Converters with “lowest Quiescent Current”	Nexperia introduced a series of step-down DC/DC converters for designing various fixed and portable battery-powered applications across consumer, industrial and automotive end-markets. For example, the NEX30606 is a step-down converter that offers a choice of 16 resistor-settable output voltages from input voltages ranging from 1.8 V to 5.0 V. It can deliver up to 600 mA of output current and offers “the industry’s lowest operating quiescent current” (Iq) of 220 µA. This feature is important e. g. for wearable consumer applications like hearing aids, medical sensors, patches and monitors in addition to battery-powered industrial applications like smart meters, asset-tracking and industrial (IIOT) and narrow-band internet-of-things (NBIOT) devices. This device provides >90 % switching efficiency for load currents ranging from 1 mA to 400 mA and has only 10 mV of output voltage ripple when stepping down from 3.6 V V<sub>in</sub> to 1.8 V<sub>out</sub>. The NEX40400 step-down converter operates with a quiescent current of 60 µA typ., and it can provide up to 600 mA output from a 4.5 V to 40 V input range. Featuring PFM (Pulse Frequency Modulation) for high efficiency at low to mid loads and Spread Spectrum Technology for minimizing EMI, the converter is suited for industrial distributed power systems and grid infrastructure (e. g. smart e-meters) as well as consumer white goods. Low shutdown supply current (0.3 µA) also makes this converter suitable for use in battery-powered home appliances. Nexperia also plans to release an AEC-Q100 qualified version of the NEX40400 later in 2025.	26.01.2025 12:30:00	Jan	news_2025-02-01_13.jpg	\images\news_2025-02-01_13.jpg	https://www.nexperia.com/about/news-events/press-releases/Nexperia-s-new-step-down-DC-DC-converters-with-lowest-quiescent-current-enhance-design-flexibility-	nexperia.com
Funding secured to make “SiC Chips 30 % cheaper”	mi2-factory GmbH, a high-tech start-up in the fiel...	12254	Industry News	Funding secured to make “SiC Chips 30 % cheaper”	mi2-factory GmbH, a high-tech start-up in the field of semiconductor equipment, announced the closing of a EUR 15 million Series A financing round and the approval of a public grant from the ICPEI ME/CT program of up to EUR 23 million. The Belgian Ion Beam Applications S.A. (IBA) and the public investment company Wallonie Entreprendre International together with Beteiligungsmanagement Thüringen and a family office, are investing a total of EUR 15 million in mi2-factory. The Federal Ministry for Economic Affairs and Climate Action (BMWK) and the Free State of Thuringia are providing on top a total of EUR 23 million in public funds from the IPCEI ME/CT program. The investment and funding will enable the scale up of the patented proprietary EFIITRON technology from today`s laboratory pilot to industrial maturity and showcase its first industrial use. Chip manufacturers will use EFIITRON in the future to reduce chip costs, increase reliability and realize new component and wafer architectures. EFIITRON is claimed to provide “unprecedented precision and flexibility of deep doping in SiC”, which is said to enable a cost reduction of up to 30 % for silicon carbide chips. mi2-factory has set itself the long-term goal of processing more than 30 % of all SiC wafers in the market with EFIITRON systems.	23.01.2025 08:00:00	Jan	news_2025-02-01_3.jpg	\images\news_2025-02-01_3.jpg	https://mi2-factory.com/2025/01/23/mi2-factory-secures-series-a-financing-and-ipcei-me-ct-funding-for-novel-efiitron-semiconductor-processing-technology/	mi2-factory.com
Ultra-Low Loss Shielded Power Inductors	The ultra-low profile XGL3020 power inductor serie...	12274	Product Release	Ultra-Low Loss Shielded Power Inductors	The ultra-low profile XGL3020 power inductor series from Coilcraft is claimed to offer "the lowest DC losses and extremely low AC losses for a wide range of DC/DC converters". This characteristic makes them well suitable for a variety of applications where space is limited and efficient power management is critical, including different non-isolated converter topologies, point-of-load (POL), IoT devices, and many other applications. The devices are integrated in a package measuring 3 mm x 3 mm x 2 mm. With an 80 V voltage rating, these components are suitable for wide V<sub>in</sub> DC/DC converters and applications. Additionally, their AEC-Q 200 qualification in the temperature range –40 °C to +125 °C with a 165 °C maximum part temperature provides reliability and robustness in automotive and other harsh environments. The components are available in the inductance range from 0.10 to 4.5 µH for current ratings up to 14.8 A with soft saturation.	23.01.2025 07:30:00	Jan	news_2025-02-15_8.jpg	\images\news_2025-02-15_8.jpg	https://www.coilcraft.com/en-us/products/power/shielded-inductors/molded-inductor/xgl/xgl3020/	coilcraft.com
Protecting HVDC Networks: 50 kV DC Breaking	SuperGrid Institute has validated its resistive su...	12253	Industry News	Protecting HVDC Networks: 50 kV DC Breaking	SuperGrid Institute has validated its resistive superconducting fault current limiter (RSFCL) technology combined with a mechanical DC circuit breaker in major tests at 50 kV. The current was limited by 87 % compared with the prospective current. With these tests, SuperGrid Institute has paved the way for a new breaking option to protect high-voltage direct current (HVDC) networks. The “compact”, environmentally-friendly technology reduces the size of DC protection equipment on the ground by 40-50 %, by incorporating a simplified mechanical DC circuit breaker with the RSFCL which uses as many standardized components as possible in a gas-insulated environment (GIS). This is not only a significant advantage for offshore platforms but also provides cost savings. In addition, resistive superconducting fault current limiters are fully compatible with AC networks. When the voltage was raised to 50 kV DC and with 1.8 MJ injected during a test the RSFCL managed to limit the current to 5.5 kA, while the prospective current was 43 kA<sub>p</sub>. The DC circuit-breaker then cut off the fault current.	23.01.2025 07:00:00	Jan	news_2025-02-01_2.jpg	\images\news_2025-02-01_2.jpg	https://www.supergrid-institute.com/2025/01/20/supergrid-institute-first-50kv-dc-breaking-combining-superconducting-fault-current-limiter-circuit-breaker/	supergrid-institute.com
Software Drives FOC Motors Without Shunts or Sensors	Power Integrations announced MotorXpert™ v3....	12258	Product Release	Software Drives FOC Motors Without Shunts or Sensors	Power Integrations announced MotorXpert™ v3.0, a software suite for configuration, control and sensing of BLDC inverters that utilize the company’s BridgeSwitch™ motor-driver ICs. The latest release of the software incorporates Power Integrations’ shuntless and sensorless technology for field-oriented control (FOC), adding support for advanced modulation schemes and unconditional startup under any load condition, along with significant improvements to the host user interface and debugging tools. MotorXpert 3.0 comprises three main sections: Specific mathematical algorithms resident on the local MCU or DSP construct accurate feedback signals from the BridgeSwitch IC and provide real-time control of the switching patterns. The second section is a host-side application which interprets inverter actions and displays critical data in actionable format for engineering analysis. Being the third main section the control interface permits development engineers to experiment and directly converge to a final product. The MotorXpert suite is MCU-agnostic and includes a comprehensive porting guide to simplify deployment with a wide range of MCUs. It is implemented in common C language to MISRA standards. The MotorXpert v3.0 host-side application includes a GUI with a digital oscilloscope visualization tool that enables engineers to design and configure parameters and operation and simplifies debugging. Parameter tool tips and a tuning assistant help during the development process, and the parameter list provides easy motor tuning. The 3.0 version also features both V/F and I/F control, which permits motor startup in any load condition. A selectable two-phase modulation scheme allows developers to trade off temperature of the inverter vs torque ripple.	23.01.2025 06:30:00	Jan	news_2025-02-01_7.jpg	\images\news_2025-02-01_7.jpg	https://investors.power.com/news/news-details/2025/Power-Integrations-Latest-MotorXpert-Software-Drives-FOC-Motors-Without-Shunts-or-Sensors/default.aspx	power.com
Fourth-Generation SiC MOSFET Technology	Wolfspeed has unveiled details about its fourth-ge...	12252	Industry News	Fourth-Generation SiC MOSFET Technology	Wolfspeed has unveiled details about its fourth-generation silicon carbide MOSFET technology. Targeted at high-power automotive, industrial, and renewable energy systems, “Gen 4 MOSFETs constitute a paradigm change in SiC technology”, claims Dr. Adam Barkley, VP, Power Technology Development at Wolfspeed. “These devices provide a versatile foundation enabling a long-term road map of application-optimized bare die, module, and discrete products. Every Gen 4-based design focuses on three performance vectors: holistic system efficiency, remarkable durability, and low system cost—all of which let designers reach before unheard-of performance and value.” Wolfspeed’s Gen4 MOSFETs reduce this high temperature specific on-state resistance by up to 21 %, with even more reduction at lower temperature. Simultaneously, the reverse recovery “is much softer, resulting in lower di/dt and significantly reduced voltage overshoot: about 900 V, corresponding to a 75 % reduction”. This provides a 300 V margin below the 1,200 V rating. Gen 4 technology improves the performance of hard-switching applications with up to 15 % lower EON and EOFF, while conduction losses in soft and hard-switching applications can be mitigated with up to 21 % reduction in RSP at operating temperature (with 175 °C R<sub>DS(on)</sub> ). Gen 4 MOSFETs are designed with enhanced immunity, achieving up to 100× reduction in cosmic rays failure-in-time (FIT) rates compared to previous generations. “Additionally, they can survive overload and overstress events, with Wolfspeed die portfolio qualified for continuous operation at 185 °C and limited life operation at 200 °C”, Dr. Barkley says.	22.01.2025 06:00:00	Jan	news_2025-02-01_1.jpg	\images\news_2025-02-01_1.jpg	https://www.wolfspeed.com/company/news-events/news/wolfspeed-launches-new-gen-4-mosfet-technology-platform-to-deliver-breakthrough-performance-in-real-world-conditions-for-high-power-applications/	wolfspeed.com
Nanocrystalline Inductors to reduce I/O and DC Line Noise	TTI IP&E – Europe now delivers the FW series of na...	12281	Product Release	Nanocrystalline Inductors to reduce I/O and DC Line Noise	TTI IP&E – Europe now delivers the FW series of nanocrystalline inductors from its franchisee Chemi-Con. The material's high magnetic permeability reduces the core volume, while enabling a lower number of copper wire turns needed to achieve a high performance, small size, and lightweight design. The common mode choke coils can be used as input/output and DC line noise filters in various power source applications. Since the curie temperature (magnetic transition temperature) is at 570 °C, the coil's characteristics are maintained even in high-temperature environments such as automotive applications. With a maximum resistance of 1.2 to 26 mΩ the coil may be used in power sources for medical equipment, communication base stations, and industrial equipment. Compared to the conventional FL-V series coils, the magnetic permeability of the FW series at 10 kHz has improved by approximately 150 % (from 3.2 to 37.1 mH), while maintaining a permeability of 1.0 to 11.5 mH at 100 kHz. Additionally, the impedance in the range from 150 kHz to 1 MHz has improved. The FW series nanocrystalline coils and cores can provide continuous operation 24/7. Other features include operation in the –40 °C to +130 °C temperature range, AEC-Q200 compliance, and UL 94V-0 Type B (+130 °C) flammability and insulation rating.	21.01.2025 14:30:00	Jan	news_2025-02-15_15.jpg	\images\news_2025-02-15_15.jpg	https://www.ttieurope.com/content/ttieurope/en/manufacturers/c-e/chemi-con.html	ttieurope.com
Low-Loss SiC MOSFETs target Renewables, Energy Storage and EV Charging Applications	SemiQ has announced a family of 1700 V SiC MOSFETs...	12263	Product Release	Low-Loss SiC MOSFETs target Renewables, Energy Storage and EV Charging Applications	SemiQ has announced a family of 1700 V SiC MOSFETs designed to meet the needs of medium-voltage high power conversion applications, such as photovoltaic and wind inverters, energy storage, EV charging, uninterruptable power supplies, and induction heating/welding. The QSiC™ 1700 V switching planar D-MOSFETs feature a body diode, capable of operation at up to 175 oC, with all components tested to beyond 1900 V, and UIL avalanche tested to 600 mJ. The QSiC 1700 V devices are available in both a bare die form (GP2T030A170X), and as a 4-pin TO-247-4L-packaged discrete (GP2T030A170H) with drain, source, driver source and gate pins. Both are also available in an AEC-Q101 automotive qualified version (AS2T030A170X and AS2T030A170H). The QSiC 1700 V series' bare die MOSFET comes with an aluminum (Al) top side and nickel/silver (Ni/Ag) bottom side. Both it and the TO-247-4L packaged device have a power dissipation of 564 W, with a continuous drain current of 83 A (at 25 oC, 61 A at 100 oC) and a pulsed drain current of 250 A (at 25 oC). They also feature a gate threshold voltage of 2.7 V (at 25 oC, 2.1 V at 125 oC), an R<sub>DSON</sub> of 31 m&ohm; (at 25 oC, 57 m&ohm; at 125 oC), 10n A gate source leakage current and a reverse recovery time (t<sub>RR</sub>) of 17 ns. The TO-247-4L package has a junction to case thermal resistance of 0.27 oC/W.	21.01.2025 11:30:00	Jan	news_2025-02-01_12.jpg	\images\news_2025-02-01_12.jpg	https://semiq.com/semiq-qsic-1700-v-series-of-high-reliability-low-loss-sic-mosfets-target-renewables-energy-storage-and-ev-charging-applications/	semiq.com
Swiss Company opened Hong Kong Office	Schurter has opened an office in Hong Kong. Steffe...	12270	Industry News	Swiss Company opened Hong Kong Office	Schurter has opened an office in Hong Kong. Steffen Lindner, General Manager and Vice President EMEA, and Oswald Fiegl, Group COO, conveyed their best wishes on behalf of Group CEO Lars Brickenkamp for the opening of the Hong Kong office and praised the excellent performance of the Asian region in 2024. According to Oswald Fiegl, Schurter "is committed to developing China and India into SCHURTER Group's operational bases in Asia to enhance our ability to serve the market and our customers".	21.01.2025 09:00:00	Jan	news_2025-02-15_4.jpg	\images\news_2025-02-15_4.jpg	https://www.schurter.com/en/news/the-grand-opening-of-schurters-hong-kong-office	schurter.com
GaN-Based Motor Drive Reference Design for Humanoid Robots	Efficient Power Conversion Corporation (EPC) launc...	12275	Product Release	GaN-Based Motor Drive Reference Design for Humanoid Robots	Efficient Power Conversion Corporation (EPC) launched the EPC91104, a 3-phase BLDC motor drive inverter reference design. This design is specifically suited for powering compact, precision motors in humanoid robots, such as those used for wrist, finger, and toe movements. The EPC91104 evaluation board uses the EPC23104 ePower™ Stage IC, offering a maximum R<sub>DS(on)</sub> of 11 mΩ and supporting DC bus voltages up to 80 V. The design supports up to 14 A<sub>peak</sub> steady-state and 20 A<sub>peak</sub> pulsed current, ensuring the performance for humanoid robot applications that require fine motor control and precision. The Designs operates in the voltage range between 14 V and 80 V, accommodating a variety of battery systems and is suitable for space-constrained robotics. It includes overcurrent and input undervoltage protection, ensuring reliability in demanding applications. For higher-current requirements, such as elbow and knee motors in humanoid robots, EPC offers the EPC9176 board in the same family. With enhanced current capacity, the EPC9176 complements the EPC91104 to cover a full range of motor drive applications in humanoid robotics. The EPC91104 is compatible with controller boards from leading manufacturers, including Microchip, Texas Instruments, STMicroelectronics, and Renesas. It is equipped with several sensing and protection features as well as with features for rapid prototyping and testing.	21.01.2025 08:30:00	Jan	news_2025-02-15_9.jpg	\images\news_2025-02-15_9.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3191/new-gan-based-motor-drive-reference-design-optimized-for-precision-motion-in-humanoid-robots	epc-co.com
Integrated Full-Bridge DC Motor Driver with real-time Diagnostics	STMicroelectronics’ VNH9030AQ integrated full-brid...	12266	Product Release	Integrated Full-Bridge DC Motor Driver with real-time Diagnostics	STMicroelectronics’ VNH9030AQ integrated full-bridge DC motor driver handles diverse automotive uses including functional-safety applications. As well as integrating advanced diagnostics, the driver has a dedicated pin for real-time output status that saves external circuitry and slims the bill of materials. With R<sub>DS(on)</sub> of 30 m&ohm; per leg, the VNH9030AQ handles mid- and low-power DC-motor driven applications such as door-control modules, washer pumps, powered lift gates, powered trunks, and seat adjusters. Integrated non-dissipative current-sense circuitry monitors the current flowing through the device to distinguish each motor phase. The VNH9030AQ integrates the high-side and low-side MOSFETs with gate drivers, diagnostics, and protection against overvoltage transients, undervoltage, short-circuit conditions, and cross conduction. Flexibility to configure the MOSFETs either in parallel or in series allows use in systems involving multiple motors or to meet other specific requirements. All products feature a 6 mm x 6 mm thermally enhanced triple-pad QFN package designed for underside cooling and share a common pinout to ease layout and software reuse.	20.01.2025 14:30:00	Jan	news_2025-02-01_15.jpg	\images\news_2025-02-01_15.jpg	https://community.st.com/t5/developer-news/vipower-full-bridge-with-real-time-diagnostics-reduces/ba-p/762419	st.com
Vibration-resistant Capacitors	All SMT variants of the Aluminum Electrolyte and A...	12279	Product Release	Vibration-resistant Capacitors	All SMT variants of the Aluminum Electrolyte and Aluminum Hybrid Polymer capacitors from Würth Elektronik are now available in an extremely vibration-resistant version on request. Using enlarged solder pads and thicker base plates, the capacitors can withstand accelerations up to 30 g (294 m/s²). Electronics must continue to function reliably, even when exposed to strong mechanical stress. This is the case with electronically controlled tools, industrial applications, construction machinery, or drones, for example. SMT components are often not the best choice here, because without special adaptations, they may not withstand the prolonged vibration stress. Especially larger components then quickly reach their limits, because they can detach from the circuit board under continuous load and cause the electronics to fail. However, making electronics vibration-resistant does not necessarily require special connection techniques like press-fitting. The vibration-resistant versions of the Würth Elektronik capacitors feature larger solder pads for a more stable connection to the circuit board and an extra-high base for improved support and vibration damping. To maintain optimal temperature management, the manufacturer has provided the base of these capacitors with special cut-outs. The capacitors are tested under conditions that go beyond the requirements of IEC 60384-4: The components must remain securely attached to the circuit board for twelve hours (four hours per axis) under vibration in the frequency range between 10 Hz and 2 kHz with an amplitude of 0.75 mm. The final electrical tests then confirm their functionality. The vibration-resistant capacitors can be processed on standard SMT production lines.	20.01.2025 12:30:00	Jan	news_2025-02-15_13.jpg	\images\news_2025-02-15_13.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=vibration-resistant-capacitors	we-online.com
Automotive Power Management IC	Infineon Technologies is expanding the OPTIREG&tra...	12276	Product Release	Automotive Power Management IC	Infineon Technologies is expanding the OPTIREG™ PMIC (Power Management) family with the OPTIREG PMIC TLF35585, an integrated multi-rail power supply solution for demanding automotive systems. The TLF35585 provides a power supply for AURIX and other microcontrollers. The power supply solutions are suited for functional safety applications in harsh automotive environments, particularly in the chassis, powertrain, domain control and transmission areas. The OPTIREG PMICs enable voltage regulation with pre- and post-regulator architectures with DC/DC and linear regulators as well as trackers. In addition to the power supply, additional monitoring and control functions are integrated, enabling users to develop automotive ECUs for safety-related applications. The TLF35585 PMIC includes a boost buck pre-regulator that supplies the post-regulator rails for the microcontroller supply, communication supply and a voltage reference. It also provides two trackers that follow the voltage reference to supply off-board sensors. The main supervision functions of the TLF35585 include a configurable window watchdog (time-based trigger), a function watchdog (question and response-based trigger), error pin monitoring as well as voltage monitoring. For the interaction with microcontrollers, a 16-bit SPI, interrupt and reset function are also available. The device complies with ISO 26262 for systems up to ASIL D and supports an extended junction temperature range of up to 175 °C. The IC integrates a state machine and a wake-up concept with timer and a stand-by regulator. TLF35585 is available in either a small VQFN-48 package or a TQFP-48 package – both packages are thermally enhanced and fully AEC-Q100 qualified (Grade 0).	20.01.2025 09:30:00	Jan	news_2025-02-15_10.jpg	\images\news_2025-02-15_10.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFATV202502-052.html	infineon.com
Increased Power Density and Thermal Performance	Vincotech released "<i>flow</i> E3BP", an advancem...	12273	Product Release	Increased Power Density and Thermal Performance	Vincotech released "<i>flow</i> E3BP", an advancement of the company's <i>flow</i> 2 and <i>flow</i> E3 housing. Featuring a specially treated surface, its convex baseplate provides a better thermal contact to better disperse heat and handle more power with a smaller footprint. The module's CTI600 housing material holds up well to higher system voltages. Its isolation walls increase creepage and clearance distances. Pre-applied thermal interface material is optionally available, as are Press-fit pins. Developed with the increasingly challenging demands of renewable energy systems in mind, the <i>flow</i> E3BP enables engineers to design 350+ kW utility string PV inverters with just a single housing per phase, cutting 30 % of the cost for a dual-module solution. It also serves to reduce the heatsink area by as much as 34 % compared to <i>flow</i> E3, thereby increasing power density to 51 %. Chosen for its low inductivity, the new <i>flow</i> E3BP figures prominently in solar and ESS inverters for the utility and commercial segments. Today's <i>flow</i> E3BP housing meets tomorrow's 2000 V systems' high voltage requirements, and the company aims to extend this product portfolio to address further applications such as motion control. Currently Vincotech offers 24 options rated from less than 10 kW up to MW. The <i>flow</i> 2, <i>flow</i> S3, and <i>flow</i> E3 housings see wide use in solar and ESS applications.	20.01.2025 06:30:00	Jan	news_2025-02-15_7.jpg	\images\news_2025-02-15_7.jpg	https://www.vincotech.com/products/by-housing/housing/flow-e3bp.html	vincotech.com
APEC 2025 Plenary Session Speakers to Keynote the Conference’s 40th Anniversary	The APEC 2025 Conference Committee for the annual ...	12257	Event News	APEC 2025 Plenary Session Speakers to Keynote the Conference’s 40th Anniversary	The APEC 2025 Conference Committee for the annual Applied Power Electronics Conference has announced that four plenary speakers are scheduled to keynote its 40th anniversary program. The Plenary Session for APEC 2025 (March 16-20, Atlanta) will take place Monday afternoon, March 17th, in the Georgia Congress Center’s from 1:30 to 4:30 PM. The Plenary Session will open with a welcome message by APEC 2025 General Chair Aung Thet Tu, followed by plenary introductions by APEC 2025 Program Chair Jin Wang. Designed to engage a global audience hailing from all sectors of the power electronics industry, the sessions will include interactive Q&As at the end of each presentation. After the Plenary Session, all registered APEC attendees are invited to attend the Welcome Reception in Exhibit Hall being held from 4:30 to 7:30 PM. The APEC 2025 Plenary Session speakers and presentations are:<br>- A Technology’s Journey: 40 Years of APEC by John G. Kassakian, Professor of Engineering, Emeritus, Massachusetts Institute of Technology (The first and second APEC General Chair, 1986 and 1987).<br>- Emerging Applications for Power Electronics in Efficient, Resilient Buildings by Wyatt Merrill, Technology Manager for Solid-State Lighting and Building Electric Appliances, Devices and Systems (BEADS), US Department of Energy.<br>- The Role of Power Electronics in Achieving a Sustainable Hydrogen Economy by Francisco Canales, Corporate Research Fellow, ABB Switzerland, Ltd.<br>- Integrated Magnetics and Heterogenous Integration Enabling Vertical Power Delivery for High Performance Computing by Cian Ó Mathúna, Research Director, Integrated Power and Energy Systems Embedded and Integrated Magnetics, Tyndall National Institute.	15.01.2025 11:00:00	Jan	news_2025-02-01_6.jpg	\images\news_2025-02-01_6.jpg	https://apec-conf.org/attendees/sessions-seminars/plenary-session/	apec-conf.org
Backend Fab in Thailand	Infineon Technologies has broken ground for a semi...	12255	Industry News	Backend Fab in Thailand	Infineon Technologies has broken ground for a semiconductor backend production site in Samut Prakan, south of Bangkok. The first building is planned to be ready for operations at the beginning of 2026. Further ramp-up will be managed flexibly in line with market demand. The project is supported by the Thailand Board of Investment (BOI). Infineon said it will support developing a robust semiconductor ecosystem in Thailand covering key components and materials in the supply chain. By enhancing partnerships with local businesses and institutions, the company intends to strengthen the semiconductor ecosystem and the development of a skilled work force. Through close collaboration with universities and local entrepreneurs, Infineon helps to grow a talent pool of highly skilled engineers with expertise in advanced semiconductors. A comprehensive training and education program to improve competencies in AI, digitalization and automation has been developed. The first group of Thai engineers successfully completed this training program at other Infineon sites.	14.01.2025 09:00:00	Jan	news_2025-02-01_4.jpg	\images\news_2025-02-01_4.jpg	https://www.infineon.com/cms/en/about-infineon/press/press-releases/2025/INFXX202501-038.html	infineon.com
Design with GaN for High-Performance Motor Drives	Efficient Power Conversion Corporation (EPC) intro...	12259	Product Release	Design with GaN for High-Performance Motor Drives	Efficient Power Conversion Corporation (EPC) introduces the EPC91200, a fully configured motor drive inverter reference design that delivers performance and flexibility for a variety of industrial and battery-powered applications. The EPC91200 is designed for 3-phase brushless DC (BLDC) motor drive applications and features the EPC2305, a 150 V 3.0 m&ohm; R<sub>DS(on)</sub> GaN FET. The EPC91200 supports voltage ranges from 30 V to 130 V, making it suitable for 80 V and 110 V battery systems commonly used in industrial automation, agricultural machinery, and material handling equipment like forklifts. It supports up to 60 A<sub>pk</sub> (40 A<sub>RMS</sub>) maximum output current with a switching frequency of up to 150 kHz, while its PCB layout and GaN technology reduce resistance and heat generation. Current sensing, voltage monitoring, overcurrent protection, and temperature sensing for robust operation are included. It works with multiple controller boards from leading manufacturers like STMicroelectronics, Texas Instruments, and Microchip. The EPC91200 provides features tailored for quick deployment and evaluation. Its PCB (130 mm x 100 mm) includes a pre-configured shaft encoder/Hall sensor interface and supports Field-Oriented Control (FOC) techniques. Engineers can directly measure critical signals and optimize system performance using built-in test points.	14.01.2025 07:30:00	Jan	news_2025-02-01_8.jpg	\images\news_2025-02-01_8.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3190/design-with-gan-for-high-performance-motor-drives-for-high-voltage-battery-applications	epc-co.com
Leadership Transition	As David (“Dave”) Heinzmann, President and Chief E...	12256	People	Leadership Transition	As David (“Dave”) Heinzmann, President and Chief Executive Officer of Littlefuse, has decided to retire, the Board has appointed Dr. Greg Henderson, a member of the Littelfuse Board of Directors, as President and Chief Executive Officer effective February 10, 2025. However, Dave Heinzmann will remain on the Littelfuse Board through April 2025 and, to support a seamless transition, serve as an advisor to the Company through August 10, 2025. Dr. Greg Henderson, 56, has been a member of the Littelfuse Board of Directors since May 2023. From 2017 to 2024, Dr. Henderson served as the Senior Vice President of the Automotive & Energy, Communications, and Aerospace Group for Analog Devices. Previously, he served as VP of the RF and Microwave Business for ADI from 2014 to 2017, and as VP of the RF and Microwave Business for Hittite Microwave Corporation until its acquisition by ADI in 2014. Before joining Hittite, Dr. Henderson held various positions at Harris Corporation, Tyco Electronics, TriQuint Semiconductor, and IBM. Dr. Henderson holds a bachelor’s degree in electrical engineering from Texas Tech University and a Ph.D. in electrical engineering from the Georgia Institute of Technology.	13.01.2025 10:00:00	Jan	news_2025-02-01_5.jpg	\images\news_2025-02-01_5.jpg	https://investor.littelfuse.com/news/news-details/2025/Littelfuse-Announces-CEO-Retirement-and-Leadership-Transition/	littelfuse.com
Power Module Series in LGA-12EP	With MagI<sup>3</sup>C-VDLM, Würth Elektronik pres...	12260	Product Release	Power Module Series in LGA-12EP	With MagI<sup>3</sup>C-VDLM, Würth Elektronik presents three power modules in the LGA-12EP package for the 24 V industrial power bus. The modules are characterized by high resilience to voltage transients on the 24 V bus and a wide input-voltage range from 3.5 V to 38 V. The module, measuring 10 × 6 × 3.1 mm<sup>3</sup>, is available with an output current of 1, 2, or 3 A. The MagI<sup>3</sup>C-VDLM series of power modules offers a fully integrated DC/DC power supply that combines all essential components in a compact package: switching regulator with integrated MOSFETs, controller, compensation circuitry, and a shielded inductor. The power module maintains a constant, selectable PWM switching frequency across the operating range, thereby optimizing output ripple for sensitive and precise applications. It achieves peak efficiency up to 94 %. The MagI<sup>3</sup>C-VDLM power modules are designed for use in point-of-load DC/DC applications on 24 V, 12 V, and 5 V buses. Typical applications include test and measurement technology, medical technology, industrial electronics, and telecommunications. The module is e. g. suited for supplying interfaces, microcontrollers, microprocessors, digital signal processors, and field-programmable gate arrays. Its EMC behavior complies with the EN55032 Class B / CISPR-32 standard.	11.01.2025 08:30:00	Jan	news_2025-02-01_9.jpg	\images\news_2025-02-01_9.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=magi3c-vdlm	we-online.com
Sebastian Fischer appointed CEO of Traco Power Group	As part of a future-oriented growth strategy, Seba...	12243	People	Sebastian Fischer appointed CEO of Traco Power Group	As part of a future-oriented growth strategy, Sebastian Fischer has taken over the position of CEO of the Traco Power Group on January 1, 2025. Together with an experienced Group Management Team, he will drive the further development of the company. As before, Jennifer Caspar, company owner and Chair of the Board of Directors, together with her father Rolf Caspar and Ueli Wampfler, both members of the Board of Directors, will continue to focus on the strategic direction of the group. After more than a decade of successfully managing Traco Power Germany, Sebastian Fischer moved to the Swiss headquarters at the end of 2023, where he took on the role of Chief Commercial Officer (CCO). In this role, he managed all subsidiaries of the Traco Power Group and was responsible for the group-wide revenue and all commercial activities of the Traco Power Group. As of January 1, 2025, Fischer handed over his responsibilities as CCO to Florian Haas, who has successfully managed product management, IT and marketing in the Traco Power Group for seven years. Before joining Traco Power, Sebastian Fischer held senior management positions in industry, with a focus on technology-oriented areas. He graduated from Munich University of Applied Sciences in 2004 with a degree in electrical engineering and electronics, followed by an MBA. He completed a postgraduate course in business law at the University of Hagen in 2015.	10.01.2025 13:00:00	Jan	news_2025-01-15_6.jpg	\images\news_2025-01-15_6.jpg	https://www.tracopower.com/de/sebastian-fischer-appointed-new-ceo-traco-power-group	tracopower.com
100 V N-Channel MOSFETs	Renesas introduced 100 V high-power N-Channel MOSF...	12265	Product Release	100 V N-Channel MOSFETs	Renesas introduced 100 V high-power N-Channel MOSFETs for applications such as motor control, battery management systems, power management and charging. End products include electric vehicles, e-bikes, charging stations, power tools, data centers, uninterruptable power supplies (UPS) and more. The company has developed its REXFET-1 MOSFET wafer manufacturing process that enables the devices “to reduce on-resistance by 30 %”. The REXFET-1 process also enables the MOSFETs to offer a 10 % reduction in Q<sub>g</sub> characteristics (the amount of charge needed to apply voltage to a gate), and a 40 % reduction in Q<sub>gd</sub> (the amount of charge that needs to be injected into the gate during the "Miller Plateau" phase). The RBA300N10EANS and RBA300N10EHPF MOSFETs are available in industry-standard TOLL and TOLG packages that are pin-compatible with devices from other manufacturers, and 50 % smaller than traditional TO-263 packages. The TOLL package also offers wettable flanks for optical inspection.	09.01.2025 13:30:00	Jan	news_2025-02-01_14.jpg	\images\news_2025-02-01_14.jpg	https://www.renesas.com/en/about/newsroom/renesas-introduces-new-mosfets-exceptional-performance	renesas.com
Current Sensor ICs deliver Higher Isolation in a 40% Smaller Footprint	Allegro MicroSystems announced the launch of two c...	12247	Product Release	Current Sensor ICs deliver Higher Isolation in a 40% Smaller Footprint	Allegro MicroSystems announced the launch of two current sensor ICs - the ACS37030MY and the ACS37220MZ. Leveraging Allegro's sensing technology, these ICs provide low internal conductor resistance, high operating bandwidth and reliable performance across a wide range of automotive, industrial and consumer applications. Allegro's current sensor ICs are designed for precise current sensing in a compact and durable package. Featuring a widebody design, the ACS37030MY and ACS37220MZ deliver higher isolation in a 40% smaller footprint compared to the existing 16-pin packages on the market. The innovative designs also incorporate lower resistance, which helps to reduce power dissipation. The ACS37030MY is a fully integrated current sensor IC with fast response time for protection of wide bandgap GaN devices. It uses a combination of Hall-effect and inductive coil signal paths to sense current over a wide frequency range. This package offering enables a product which is both 5x faster than existing solutions, but also 40% smaller. ACS37030 is also available in a narrow-body package for lower isolation requirements. The ACS37220MZ fully-integrated, Hall-effect current sensor features a 150 kHz bandwidth and fault pin. This device is designed for value-line current sensing applications as a successor to the popular ACS724/5 family of products. The package of the ACS37220MZ offers a 40% smaller solution size and lower resistance for lower power dissipation.	08.01.2025 09:30:00	Jan	news_2025-01-15_10.jpg	\images\news_2025-01-15_10.jpg	https://www.allegromicro.com/en/about-allegro/newsroom/press-releases/2024/acs37030my-acs37220mz	allegromicro.com
Power Management IC for Energy Harvesting	Nexperia is expanding its energy harvesting portfo...	12248	Product Release	Power Management IC for Energy Harvesting	Nexperia is expanding its energy harvesting portfolio with the NEH71x0 power management IC (PMIC) family. These devices eliminate the need for an external inductor, reducing circuit board space and bill-of-materials (BOM) cost. It is available in a compact 4 mm x 4 mm QFN28 package. Applications include remote controls, key fobs, smart tags, asset trackers, occupancy sensors, environmental monitors, wearables, keyboards, tire pressure monitors, and any number of Internet of Things (IoT) applications. These PMICs represent a complete power management solution for energy harvesting: enabling engineers to extend battery life, recharge batteries or supercapacitors, and even eliminate batteries in certain designs, thanks to its cold start feature. With the NEH71x0 (NEH7100BU, NEH7110BU) PMICs, designers can choose from multiple ambient power sources such as light, kinetic/piezo or a temperature gradient. With an input power range from 15µW to 100mW, these high-performance energy harvesting ICs can convert energy with an efficiency of up to 95%. These devices include an on-chip maximum power point tracking (MPPT) adaptive algorithm to optimize the energy harvested, which adapts every 0.5 second, making the PMIC extremely responsive to changing environmental conditions.	07.01.2025 10:30:00	Jan	news_2025-01-15_11.jpg	\images\news_2025-01-15_11.jpg	https://www.nexperia.com/about/news-events/press-releases/Nexperia-enhances-Energy-Harvesting-portfolio-with-innovative-PMIC-reducing-BOM-cost	nexperia.com
Adding 250 Amp Series to its Digital Shunt Sensor Line	Bourns announced that it has further expanded its ...	12244	Product Release	Adding 250 Amp Series to its Digital Shunt Sensor Line	Bourns announced that it has further expanded its digital shunt sensor line with the release of the Riedon™ Model SSD-250A Series Shunt Sensor – Digital by Bourns. The 250 amp series is available in two versions: the RS-485 serial interface model, which can also be configured as MODBUS RTU, and a customizable CANbus model. Designed to give developers a broader range of measurement solutions with the benefits of digital, this series features 100 A, 250 A and 500 A nominal current, a -40 °C to +115 °C operating temperature range and 1500 VDC galvanic isolation that helps to enhance accuracy and operational stability. Offered in a compact System-in-Package (SIP), the Model SSD-250A Series delivers calibrated and temperature-compensated digital output, making these shunt sensors ideal current sensing solutions for a wide variety of battery-related applications including renewable energy systems, motor drives and EV charging stations. These shunt-based sensors also help eliminate the need for periodic device calibrations, all while providing highly accurate measurements that contribute to more efficient use of power. In addition, the series features considerably lower insertion resistance than passive shunt sensors and Hall Effect sensors.	07.01.2025 06:30:00	Jan	news_2025-01-15_7.jpg	\images\news_2025-01-15_7.jpg	https://www.bourns.com/news/press-releases/pr/2025/01/07/bourns-adds-250-amp-series-to-its-digital-shunt-sensor-line-broadening-range-of-measurement-solutions-for-battery-applications	bourns.com
Power Factor Correction Chokes for Applications from 100-1,000 Watts	ITG Electronics has further expanded its range of ...	12246	Product Release	Power Factor Correction Chokes for Applications from 100-1,000 Watts	ITG Electronics has further expanded its range of mid-tier power factor correction chokes (PFCs). Suitable for applications with continuous conduction requirements in the 100-1,000 Watt range, the company's PFC222222D Series are designed to meet rigorous AC to DC converter needs for the industrial, equipment and automotive industries. An extension of ITG Electronics' Cubic Design set of power factor correction chokes, PFC222222D Series solutions are viable for Inductance ranges from 260-4500uH and, at a maximum length/width of 21.5 x 22mm and height of 22mm, occupy an exceedingly compact footprint. Compared with traditional toroidal-shaped PFC chokes, the PFC222222DH Series features a flat wire and square core construction to save space and increase power density as much as threefold. The solutions are up to 50% smaller compared with toroidal-shaped PFC chokes with similar power ratings, and can reduce DC resistance by as much as 40%, leading to substantially lower copper losses. ITG Electronics' PFC222222D Series offers an alloy powder-based DIP Inductor that minimizes core loss, and the chokes' low-leakage magnetic flux further reduces energy loss and improves overall efficiency. PFC chokes also come free of any concerns related to thermal aging. The chokes can handle 12.4 Amp with approximately 50% roll off.	06.01.2025 08:30:00	Jan	news_2025-01-15_9.jpg	\images\news_2025-01-15_9.jpg	https://itg-electronics.com/en/series/945	itg-electronics.com
2025 Device Research Conference Announces Call for Papers	The Device Research Conference (DRC) has announced...	12240	Event News	2025 Device Research Conference Announces Call for Papers	The Device Research Conference (DRC) has announced a Call for Papers for DRC 2025, the conference's 83rd anniversary. DRC will be held from June 22-25, 2025 at Duke University in Durham, NC. The DRC brings together leading scientists, researchers, and students from many disciplines in academia and industry to share their latest research and discoveries in device science, technology, and modeling, including many of the first disclosures of key device technologies. The DRC 2025 technical program offers a rich and diverse agenda, featuring three plenaries, seven keynotes, and 40 invited speakers that cover a broad spectrum of device-related topics. The program will include oral and poster sessions showcasing advanced research in electronic and photonic devices, evening panel discussions, and a special Focus Session on Devices for Heterogeneous Integration. The plenary talks will be delivered by leaders in device science and technology: Eli Yablonovitch, Nicky Lu, and Suman Datta. Other program highlights include a Short Course on Heterogeneous Integration, a Tutorial on modeling and simulations, and vibrant student participation, with Student Paper Awards recognizing exceptional contributions. DRC 2025 is held in coordination with the Electronic Materials Conference (EMC), recognizing the strong interaction between device and electronic materials research, providing an opportunity for meaningful exchanges of information between attendees of both conferences.	06.01.2025 08:00:00	Jan	news_2025-01-15_3.jpg	\images\news_2025-01-15_3.jpg	https://2025.deviceresearchconference.org/	2025.deviceresearchconference.org
Acquisition of 200mm Wafer Fab	Littelfuse announced it completed the acquisition ...	12242	Industry News	Acquisition of 200mm Wafer Fab	Littelfuse announced it completed the acquisition of the 200mm wafer fab located in Dortmund, Germany ("Dortmund fab") from Elmos Semiconductor. The completion of the Dortmund fab acquisition enhances Littelfuse long-term power semiconductor opportunities across a broad base of industrial end markets including energy storage, automation, motor drives, renewables, power supplies, and charging infrastructure.<br>"We are excited to welcome the talented and highly skilled Dortmund fab employees to the Littelfuse team," said Dave Heinzmann, President & Chief Executive Officer. "This acquisition supports Littelfuse long-term growth strategy while expanding our power semiconductor technology offering and high-quality manufacturing capabilities."<br>"The acquisition of the Dortmund fab expands our long-term organic growth opportunities for broad-based customer demand in high-growth power conversion applications across industrial end markets," said Chad Marak, Senior Vice President and General Manager, Littelfuse Semiconductor Business. "The Dortmund fab complements our current footprint while growing our highly skilled technology team and enhancing our operational capabilities."	30.12.2024 12:00:00	Dec	news_2025-01-15_5.jpg	\images\news_2025-01-15_5.jpg	https://investor.littelfuse.com/news/news-details/2024/Littelfuse-Completes-Acquisition-of-the-200mm-Wafer-Fab-Located-in-Dortmund-Germany/default.aspx	littelfuse.com
Samples of HVIGBT Modules now Shipping	Mitsubishi Electric Corporation announced that it ...	12241	Industry News	Samples of HVIGBT Modules now Shipping	Mitsubishi Electric Corporation announced that it will begin shipping samples of two new S1-Series High Voltage Insulated Gate Bipolar Transistor (HVIGBT) modules, both rated at 1.7kV, for large industrial equipment such as railcars and DC power transmitters. Thanks to proprietary Insulated Gate Bipolar Transistor (IGBT) devices and insulation structures, the modules offer excellent reliability and low power loss and thermal resistance, which are expected to increase the reliability and efficiency of inverters in large industrial equipment. Mitsubishi Electric's 1.7kV HVIGBT modules, first released in 1997 and highly regarded for their performance and reliability, have been widely adopted for inverters in power systems. The new S1-Series modules incorporate Mitsubishi Electric's proprietary Relaxed Field of Cathode (RFC) diode, which increases the Reverse Recovery Safe Operating Area (RRSOA) by 2.2 times compared to previous models for improved inverter reliability. In addition, the use of an IGBT element with a Carrier Stored Trench Gate Bipolar Transistor (CSTBT) structure helps reduce both power loss and thermal resistance for more efficient inverters. Furthermore, Mitsubishi Electric's proprietary insulation structure increases the insulation voltage resistance to 6.0kVrms, 1.5 times that of previous products, resulting in more flexible insulation designs for compatibility with a wide range of inverter types.	23.12.2024 11:00:00	Dec	news_2025-01-15_4.jpg	\images\news_2025-01-15_4.jpg	https://www.mitsubishielectric.com/news/2024/1223.html	mitsubishielectric.com
Enabling Semiconductor Development	Micon Global has started a strategic sales partner...	12222	Industry News	Enabling Semiconductor Development	Micon Global has started a strategic sales partnership with Silvaco, a provider of software solutions for semiconductor and photonics design, including TCAD, EDA software, and SIP solutions. This sales partnership is intended to "drive Silvaco's expansion across EMEA market". Silvaco specializes in developing TCAD and EDA software, as well as SIP solutions that support semiconductor design and digital twin modeling through AI tools. With its product range, Silvaco enables the development of complex semiconductor and photonics systems for diverse applications, including automotive, IoT, high-performance computing, and 5G/6G mobile networks. Micon connects technology providers with companies in the semiconductor, electronics, and software sectors.	20.12.2024 08:00:00	Dec	news_2025-01-01_3.jpg	\images\news_2025-01-01_3.jpg	https://investors.silvaco.com/news-releases/news-release-details/micon-global-and-silvaco-announce-new-partnership	silvaco.com
High Current Metal Shunt For E-Bike Power Systems	As power electronics evolve, the requirements for ...	12236	Product Release	High Current Metal Shunt For E-Bike Power Systems	As power electronics evolve, the requirements for high current, low resistance sensing resistors continues to increase. Emerging applications, such as electric bikes and scooters may require high power, high accuracy, and low thermal resistance. Stackpole's HCS series provides high power, precise sensing and low thermal resistance. It offers power ratings up to a 10 W rated in 5930 size with a minimum TCR of 50 ppm. A raised element improves the thermal footprint of the device and decreases PCB and terminal temperature. Resistance values starting at 0.2 mΩ enable high efficiency sensing in a surface mountable package. According to the manufacturer the all-metal construction also provides "very high pulse withstanding superior to that of film or foil on ceramic sense resistor types."	19.12.2024 15:30:00	Dec	news_2025-01-01_17.jpg	\images\news_2025-01-01_17.jpg	https://www.seielect.com/	seielect.com
Wide-Creepage Switcher IC for 800 V Automotive Applications	Power Integrations introduced a wide-creepage pack...	12230	Product Release	Wide-Creepage Switcher IC for 800 V Automotive Applications	Power Integrations introduced a wide-creepage package option for its InnoSwitch3™-AQ flyback switcher IC for automotive applications. A drain-to-source-pin creepage distance of 5.1 mm eliminates the need for conformal coating, making the IC compliant to the IEC60664-1 standard in 800 V vehicles while simplifying manufacturing and increasing system reliability. The company's InSOP™-28G package enables 1000 V<sub>DC</sub> to be provided to the primary side, while keeping all other pins safely isolated in pollution degree 2 environments. The 1700 V-rated CV/CC InnoSwitch3-AQ switching power supply ICs incorporate a silicon carbide (SiC) primary switch capable of delivering up to 80 W of output power. The ICs reduce the number of components required to implement a power supply by up to 50 %. An increased drain-pin width is beneficial in withstanding high levels of shock and vibration, especially in eAxle automotive applications. These members of the InnoSwitch3-AQ family will start up with 30 V on the drain without external circuitry-which is critical for functional safety. Additional protection features include input under-voltage, output over-voltage and over-current limiting. Synchronous rectification and a multi-mode valley switching, discontinuous/continuous conduction mode (DCM/CCM) flyback controller deliver greater than 90 percent efficiency. Devices consume less than 15 mW at no-load. Target automotive applications include battery management systems, µDC/DC converters, control circuits and emergency power supplies in the main traction inverter.	18.12.2024 09:30:00	Dec	news_2025-01-01_11.jpg	\images\news_2025-01-01_11.jpg	https://investors.power.com/news/news-details/2024/Power-Integrations-Targets-800-V-Automotive-Applications-with-New-Wide-Creepage-Switcher-IC/default.aspx	power.com
Next-Generation SiC Process Platform	X-FAB Silicon Foundries has launched XSICM03, its ...	12225	Industry News	Next-Generation SiC Process Platform	X-FAB Silicon Foundries has launched XSICM03, its "next-generation XbloX platform, advancing Silicon Carbide process technology for power MOSFETs, delivering significantly reduced cell pitch, enabling increased die per wafer and improved on-state resistance without compromising reliability". XbloX is X-FAB's streamlined business process and technology platform, which integrates qualified SiC process development blocks and modules for planar MOSFET production, simplifying the onboarding process and significantly reducing design risks and product development time. By combining proven process modules with robust design rules, control plans, and FMEAs, XbloX is said to enable "faster prototyping, easier design evaluation, and shorter time to market". This next generation platform provides active area design cell size reduction "while maintaining robust process controls, as well as leakage and breakdown device performance". The XSICM03 platform allows customers to create SiC planar MOSFETs with a cell pitch that is over 25 % smaller than the previous generation. This allows for up to a 30 % increase in die per wafer compared to the previous generation.	17.12.2024 11:00:00	Dec	news_2025-01-01_6.jpg	\images\news_2025-01-01_6.jpg	https://www.xfab.com/news/details/article/x-fab-launches-next-generation-silicon-carbide-process-platform-for-power-mosfet-designs	xfab.com
Asymmetrical TVS Diodes for Gate Driver Protection for Automotive SiC MOSFETs	Littelfuse announced the launch of its TPSMB Asym...	12245	Product Release	Asymmetrical TVS Diodes for Gate Driver Protection for Automotive SiC MOSFETs	Littelfuse announced the launch of its TPSMB Asymmetrical TVS Diode Series, the first-to-market asymmetrical transient voltage suppression (TVS) diode specifically designed for the protection of Silicon Carbide (SiC) MOSFET gate drivers in automotive applications. This product addresses the increasing demand for reliable overvoltage protection in next-generation electric vehicle (EV) systems, delivering a compact, single-component solution that replaces multiple Zener diodes or TVS components traditionally used for gate driver protection. The TPSMB Asymmetrical TVS Diode Series provides superior protection for SiC MOSFET gate drivers, which are prone to overvoltage events due to faster switching speeds compared to traditional silicon-based MOSFETs or IGBTs. The asymmetrical design of the TPSMB Series supports SiC MOSFETs' differing positive and negative gate driver voltage ratings, ensuring enhanced performance in a variety of demanding automotive power applications where SiC MOSFETs are used, including Onboard chargers (OBCs), EV traction Inverters, I/O interfaces, and Vcc buses. These applications demand high-performance overvoltage protection (OVP) for SiC MOSFET gate drivers to ensure optimal performance, longevity, and efficiency.	17.12.2024 07:30:00	Dec	news_2025-01-15_8.jpg	\images\news_2025-01-15_8.jpg	https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2024/new-tpsmb-asymmetrical-tvs-diodes-from-littelfuse-provide-superior-gate-driver-protection-for-automotive-sic-mosfets	littelfuse.com
Automotive-Compliant Synchronous Buck LED Driver	Diodes Incorporated (Diodes) introduced the automo...	12237	Product Release	Automotive-Compliant Synchronous Buck LED Driver	Diodes Incorporated (Diodes) introduced the automotive-compliant LED driver AL8891Q. This device is a synchronous Buck LED driver with high-side current sense driving up to 2 A from a 4.5 V to 65 V input voltage range. It supports up to 95% duty cycle, allowing the drive of longer LED chains. The device is intended for automotive lighting applications, including daytime running lights (DRL), fog lights, turn lights, brake/stop lights, and interior lights. Using constant-on-time (COT) control, the AL8891Q achieves control-loop compensation and cycle-by-cycle current limiting without requiring an external compensation capacitor. The device's switching frequency is adjustable from 200 kHz to 2.5 MHz, allowing it to optimize efficiency or achieve a smaller inductor size and compact form factor. It incorporates a spread spectrum frequency modulation technique to enhance EMI performance, which eases compliance with the most stringent CISPR 25 Class 5 standard. The AL8891Q has two independent pins-PWM and analog dimming. PWM dimming, from 0.1 kHz to 2 kHz, is suitable for high-resolution dimming, and analog dimming is from 0.15 V to 2 V. It features an internal soft-start function, gradually increasing the inductor and switch current to minimize potential overvoltage and overcurrent at the output. The device features several protections with fault reporting, including thermal shutdown with auto-restart, input and constant current undervoltage lockout (UVLO), cycle-by-cycle current limit, and LED-open & short circuit protection. It is available in the thermally enhanced TSSOP-16EP package with an operating temperature range of -40 °C to +125 °C.	16.12.2024 16:30:00	Dec	news_2025-01-01_18.jpg	\images\news_2025-01-01_18.jpg	https://www.diodes.com/about/news/press-releases/65v-2a-automotive-compliant-synchronous-buck-led-driver-from-diodes-incorporated-for-lighting-applications-with-comprehensive-protection-and-fault-reporting/	diodes.com
Current Transducer for DC Charging Station Testing Device Demonstrator	A current research project at Graz University of T...	12238	Industry News	Current Transducer for DC Charging Station Testing Device Demonstrator	A current research project at Graz University of Technology analyses periodic verification and safety of direct current electric vehicle charging stations. As part of the ProSafE² project (Protection, Safety and Efficiency of Electric Vehicle Charging Stations) the basis for periodic verification of direct current electric vehicle charging stations (EVCS) is being researched and a test procedure for the recurring testing of DC charging stations has been developed over the past two and a half years in order to ensure their safety over the entire operating period. Findings from the project are also being incorporated into the update of the OVE guideline R 30. For this project, a DS600ID current transducer from Danisense has been integrated into the DC circuit of the 'mobile charging station testing device demonstrator,' which is connected to the DC charging station. The current transducer precisely measures the currents flowing between the charging station and the demonstrator. This is very important as the project also focuses on the energy efficiency of the EV charger. "For such an energy efficiency measurement you need to have highly accurate current measurements to reduce the impact of the error in the calculation," remarks Loic Moreau, EMEA Sales & Marketing Director at Danisense.	16.12.2024 06:00:00	Dec	news_2025-01-15_1.jpg	\images\news_2025-01-15_1.jpg	https://danisense.com/archive/DS600ID-2.pdf	danisense.com
Silicone Gap Filler for Thermal Management	With WEVOSIL 26040 FL, Wevo is expanding its portf...	12235	Product Release	Silicone Gap Filler for Thermal Management	With WEVOSIL 26040 FL, Wevo is expanding its portfolio of thermal interface materials (TIMs) with a specially optimised silicone gap filler. The material features a thermal conductivity of 4 W/m*K, a bond line thickness of less than 70 µm and enhanced sedimentation stability. In addition, the dosing profile has been sharpened to secure an efficient production process. It is suited for the thermal management of numerous electrical and electronic applications, from power electronics to battery technologies. With its specially developed filler combination the material also bridges small gaps. Material properties such as reactivity can be customized to individual needs. This silicone gap filler offers a temperature resistance of up to 200 °C, flame-retardant properties in accordance with UL 94 V-0 (as of a thickness of just 2 mm) and good mechanical properties, including elongation at break of more than 30 per cent. When cured, WEVOSIL 26040 FL meets the requirements of the PV 3040 test specification for low-volatile emissions in the automotive industry and is therefore suitable for a wide range of applications.	12.12.2024 14:30:00	Dec	news_2025-01-01_16.jpg	\images\news_2025-01-01_16.jpg	https://www.wevo-chemie.de/en/news-press/detailpage/new-silicone-gap-filler	wevo-chemie.de
Instrument for (Power) Designs	The DL950 is a from Yokogawa is a combination of a...	12233	Product Release	Instrument for (Power) Designs	The DL950 is a from Yokogawa is a combination of a mixed signal oscilloscope and portable data acquisition recorder that can be used to capture both high speed transient events and long run trends. Such a ScopeCorder offers a combination of channel count, input types, triggering, and recording to tackle the job of electromechanical systems development and troubleshooting. It accurately captures switching waveforms of inverters and fastmoving noises around the power supply by using its 200 MSamples/s isolation module. It operates with an isolated input of up to 1000 V, an ADC resolution of 14 bit and provides up to 20 s of continuous acquisition. Using 10 Gbit/s Ethernet, up to 20 MS/s of data can be stored in real time on a PC. An SFP+ module, a fiber optic cord, and the PC software IS8000 are used for data transfer.	12.12.2024 12:30:00	Dec	news_2025-01-01_14.jpg	\images\news_2025-01-01_14.jpg	https://tmi.yokogawa.com/eu/solutions/products/oscilloscopes/is8000-integrated-software-platform/	tmi.yokogawa.com
Power Sensors for accurate Measurements up to 18 GHz	With its R&S NRPxE RF power sensors, Rohde & Schwa...	12232	Product Release	Power Sensors for accurate Measurements up to 18 GHz	With its R&S NRPxE RF power sensors, Rohde & Schwarz claims to set "a new standard for accurate and reliable power measurements in frequency ranges up to 18 GHz, while offering an unprecedented level of affordability". They feature a dynamic range of 80 dB, a video bandwidth of 100 kHz, and the ability to perform up to 1,000 measurements per second. With frequency ranges from 10 MHz to 8 or 18 GHz, the power sensors cater to various measurement needs. The sensors feature an IEEE-compliant label and connector color coding, for safe and secure operation. The built-in trigger capability and RGB status LED make monitoring the sensor status and trigger measurements easier. Equipped with a USBTMC interface, the R&S NRPxE sensors can be directly integrated into test systems and they also allow remote controlling via PC or mobile device. The free PowerViewer mobile app enables on-the-go measurements using an Android smartphone, e. g. for field service and maintenance applications. These power sensors replace the established NRP-Z2x1 RF power sensors.	12.12.2024 11:30:00	Dec	news_2025-01-01_13.jpg	\images\news_2025-01-01_13.jpg	https://www.rohde-schwarz.com/uk/about/news-press/all-news/rohde-schwarz-presents-new-essential-power-sensors-for-accurate-measurements-in-frequency-ranges-up-to-18-ghz-press-release-detailpage_229356-1534796.html	rohde-schwarz.com
PMICs for SoCs Adopted in Reference Designs for Cockpits	ROHM Semiconductor announced the adoption of its P...	12231	Product Release	PMICs for SoCs Adopted in Reference Designs for Cockpits	ROHM Semiconductor announced the adoption of its PMICs in power reference designs focused on the next-generation cockpit SoCs Dolphin3 (REF67003) and Dolphin5 (REF67005) by Telechips, a fabless semiconductor manufacturer for automotive applications headquartered in Pangyo, South Korea. Intended for use inside the cockpits of European automakers, these designs are scheduled for mass production in 2025. ROHM and Telechips have been engaged in technical exchanges since 2021, fostering a close collaborative relationship from the early stages of SoC chip design. As a first step in achieving this goal, ROHM's power supply solutions have been integrated into Telechips' power supply reference designs. These solutions support diverse model development by combining sub-PMICs and DrMOS with the main PMIC for SoCs. For infotainment applications, the Dolphin3 application processor (AP) power reference design includes the BD96801Qxx-C main PMIC for SoCs. Similarly, the Dolphin5 AP power reference design developed for next-generation digital cockpits combines the BD96805Qxx-C and BD96811Fxx-C main PMICs for SoC with the BD96806Qxx-C sub-PMIC for SoC, improving overall system efficiency and reliability.	12.12.2024 10:30:00	Dec	news_2025-01-01_12.jpg	\images\news_2025-01-01_12.jpg	https://www.rohm.com/reference-designs	rohm.com
2300-V SiC Power Modules	The first family of 2300-V Wolfspeed WolfPack&trad...	12229	Product Release	2300-V SiC Power Modules	The first family of 2300-V Wolfspeed WolfPack™ power modules from Wolfspeed was designed for 1500-V DC bus systems to maximize performance while reducing BoM, production and maintenance costs. Using a 2300-V SiC module reduces component count and system size by moving to 2-level power conversion architectures. Basically, this means a 15% greater voltage headroom with better surge and overload tolerance when compared to a 2000-V SiC design as well as a 2-3x reduction in switching losses for 1500-V DC bus application compared to other SiC solutions. The manufacturer highlights the "optimized FIT rate for 24/7 continuous 1500-V DC operation via improved cosmic ray susceptibility compared to a 2000-V design". A typical family member is the CAB5R0A23M4(T) SiC half-bridge module, which operates with an on-resistance of 5.0 mΩ. The DC continuous drain current is specified to be 150 A while the pulsed drain is specified to be 300 A.	12.12.2024 08:30:00	Dec	news_2025-01-01_10.jpg	\images\news_2025-01-01_10.jpg	https://www.wolfspeed.com/products/power/sic-power-modules/	wolfspeed.com
ROL0 and Halogen-free Flux-cored Wire	Indium Corporation announced the global availabili...	12251	Product Release	ROL0 and Halogen-free Flux-cored Wire	Indium Corporation announced the global availability of CW-807RS, a halide- and halogen-free flux-cored wire that improves wetting speeds and cycle times for electronics assembly and robot soldering applications. CW-807RS is a no-clean formula designed to maximize the solderability of a halogen-free cored wire solder flux. It is an upgraded version of Indium Corporation's CW-807 formula, which has been popular with electronics assemblers and other customers for many years. This halogen-free version will provide improved wetting speeds and contains the company's industry-leading spatter control technology. CW-807RS provides benefits in manual and robotic soldering applications requiring an "L" IPC classification and halogen-free wire, as well as in manual and robotic soldering applications requiring extra wetting power to achieve higher throughput while remaining halogen-free. Additionally, the spatter control technology within the flux produces an aesthetically pleasing board post-soldering by leaving minimal spattering and a clear to light-colored residue.	10.12.2024 13:30:00	Dec	news_2025-01-15_14.jpg	\images\news_2025-01-15_14.jpg	https://www.indium.com/corporate/media-center/news/indium-corporation-introduces-new-ROL0-and-halogen-free-flux-cored-wire/	indium.com
USB PD EPR Solution Featuring Type-C Port Controller and Buck-Boost Battery Charger	Renesas Electronics introduced the RAA489118 buck-...	12249	Product Release	USB PD EPR Solution Featuring Type-C Port Controller and Buck-Boost Battery Charger	Renesas Electronics introduced the RAA489118 buck-boost battery charger and the RAA489400 USB Type-C® port controller. The two ICs combine to provide a premier Extended Power Range (EPR) USB Power Delivery (PD) solution. The RAA489118 functions as either a battery charger supporting two to seven battery cells in series or as a voltage regulator supporting 30V input and 30V output. It employs Renesas' patented R3™ (Robust Ripple Regulator) technology, which combines features of fixed-frequency and hysteretic Pulse-Width Modulation (PWM) technologies. R3 modulation technology delivers acoustic noise-free operation, fast dynamic response, and light-load efficiency for longer battery life. The RAA489118 includes an SMBus (System Management Bus) interface that is widely employed in power tools, home appliances and light industrial products. The SMBus interface, combined with the buck-boost and bidirectional features, allows the RAA489118 to work seamlessly with the RAA489400 and other components in USB-C PD implementations. Its input and output voltage levels also match mainstream solar power voltage levels, making it an ideal fit for solar portable power station applications. The RAA489400 port controller supports USB-PD VBUS power up to 48V/5A. It features an integrated PHY, both Sink and Source Power Path Gate Drivers with external NFETs, short-circuit protection, VBUS discharge, a VCONN MUX and dead battery support.	10.12.2024 11:30:00	Dec	news_2025-01-15_12.jpg	\images\news_2025-01-15_12.jpg	https://www.renesas.com/en/about/newsroom/renesas-introduces-usb-pd-epr-solution-featuring-type-c-port-controller-and-buck-boost-battery	renesas.com
Solar Optimizers with GaN FETs	Efficient Power Conversion (EPC) launched the EPC9...	12228	Product Release	Solar Optimizers with GaN FETs	Efficient Power Conversion (EPC) launched the EPC9178, a reference design for photovoltaic (PV) optimizers. Designed to deliver high reliability while addressing critical challenges in energy efficiency and cost-effectiveness through the reduction of passive components in solar energy systems, the EPC9178 demonstrates the transformative potential of GaN technology for renewable energy solutions. This reference design employs a back-to-back buck-boost converter topology for energy harvesting for each solar panel, even under challenging conditions such as shading. This solution bridges the gap between micro-inverters and string inverters, offering enhanced energy efficiency and compatibility with existing infrastructure. The EPC9178 combines GaN technology with a dedicated controller to deliver its performance and reliability. Operating at 450 kHz minimizes the size of passive components, resulting in a lightweight and space-saving solution with 98% peak efficiency. Powered by 100 V-rated EPC2306 eGaN® FETs, the EPC9178 offers an on-resistance of 3.8 mΩ and reduced switching losses compared to silicon MOSFETs. The integrated LM5177 controller from Texas Instruments reduces design complexity and component count. It operates across an input voltage range of 30 V to 60 V, with selectable output voltages of 30 V, 45 V, and 60 V.	10.12.2024 07:30:00	Dec	news_2025-01-01_9.jpg	\images\news_2025-01-01_9.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3187/design-high-efficiency-solar-optimizers-with-gan-fets	epc-co.com
Strategic Gallium Nitride Technology Collaboration for Automotive	ROHM and TSMC have entered a strategic partnership...	12221	Industry News	Strategic Gallium Nitride Technology Collaboration for Automotive	ROHM and TSMC have entered a strategic partnership on development and volume production of gallium nitride power devices for electric vehicle applications. The partnership will integrate ROHM's device development technology with TSMC's GaN-on-silicon process technology. The partnership builds on ROHM and TSMC's history of collaboration in GaN power devices. In 2023, ROHM adopted TSMC's 650 V GaN high-electron mobility transistors (HEMT), whose process is increasingly being used in consumer and industrial devices as part of ROHM's EcoGaN series.	10.12.2024 07:00:00	Dec	news_2025-01-01_2.jpg	\images\news_2025-01-01_2.jpg	https://www.rohm.com/news-detail?news-title=2024-12-10_news&defaultGroupId=false	rohm.com
Sixteen MOSFETs in specific Package	Nexperia launched sixteen 80 V and 100 V power MOS...	12218	Product Release	Sixteen MOSFETs in specific Package	Nexperia launched sixteen 80 V and 100 V power MOSFETs in the copper-clip CCPAK1212 package for high power density. The copper-clip design provides high current conduction, reduced parasitic inductance, and excellent thermal performance. These features make the devices well-suited for motor control, power supplies, renewable energy systems, and other power-hungry applications. The range also includes application-specific MOSFETs (ASFETs) designed for AI server hot-swap functions. With top-side and bottom-side cooling options, these MOSFETs are supported by JEDEC registration. The benchmark PSMN1R0-100ASF is a 0.99 mΩ 100 V power MOSFET capable of conducting 460 A and dissipating 1.55 KW of power, yet in a CCPAK1212 package footprint that occupies 12 mm x 12 mm of board space. The PSMN1R0-100CSF offers similar statistics in a top-side cooled version. This is enabledby the internal construction of the devices. The "CC" in CCPAK1212 stands for copper clip, meaning that the power MOSFET silicon die is sandwiched between two pieces of copper, the drain tab on one side and the source clip on the other., which means that wire bonds are entirely eliminated.	09.12.2024 14:30:00	Dec	news_2024-12-15_16.jpg	\images\news_2024-12-15_16.jpg	https://www.nexperia.com/about/news-events/press-releases/CCPAK1212-package-pushes-the-performance-of-Nexperia-s-power-MOSFETs-to-the-next-level	nexperia.com
Acquisition of SiC JFET Business	onsemi announced that it has entered into an agree...	12209	Industry News	Acquisition of SiC JFET Business	onsemi announced that it has entered into an agreement to acquire the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, including the United Silicon Carbide subsidiary, from Qorvo. The acquisition will complement onsemi's extensive EliteSiC power portfolio and enable the company to address the need for high energy efficiency and power density in the AC-DC stage in power supply units for AI data centers. Additionally, the move will accelerate onsemi's readiness for emerging markets such as EV battery disconnects and solid-state circuit breakers (SSCBs). "As AI workloads become more complex and energy-intensive, the importance of reliable SiC JFETs that deliver high energy efficiency and are able to handle high voltages will continue to increase," said Simon Keeton, group president and general manager of the Power Solutions Group, onsemi. "With the addition of Qorvo's industry leading SiC JFET technology, our intelligent power portfolio offers our customers yet another solution to optimize energy consumption and increase power density."	09.12.2024 12:00:00	Dec	news_2024-12-15_7.jpg	\images\news_2024-12-15_7.jpg	https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-acquires-silicon-carbide-jfet-technology-to-enhance-its-power-portfolio-for-ai-data-centers	onsemi.com
Hot-Swap/E-Fuse	HMI released the HL8520E, a hot-swap/E-Fuse device...	12217	Product Release	Hot-Swap/E-Fuse	HMI released the HL8520E, a hot-swap/E-Fuse device designed to offer protection and power control for sensitive load circuitry. The HL8520E is designed to protect systems from input transients, shorts, and voltage spikes that could damage load circuitry, while managing power delivery to enhance reliability. With an input voltage range of 2.7 V to 16 V, it supports both low- and high-voltage systems, making it suitable for diverse applications. The device can also handle up to 20 A of output current. Featuring an integrated MOSFET with an R<sub>DS(on)</sub> of 2.8 mΩ, the HL8520E reduces conduction losses while improving power efficiency, and thermal performance. It includes several protection features, such as over-current protection (OCP), short-circuit protection (SCP), thermal shutdown (TSD), damaged MOSFET detection, over-voltage protection (OVP), and under-voltage lockout (UVLO), safeguarding both the device and the load from electrical faults. For smoother system operation, the HL8520E allows for an external adjustable soft start, enabling controlled inrush current during startup. Additionally, the device provides configurable current limits. The response time of less than 200 ns for short-circuit protection helps detecting and mitigating fault conditions. The device comes in an LGA-26 package measuring 4 mm x 4 mm.	05.12.2024 13:30:00	Dec	news_2024-12-15_15.jpg	\images\news_2024-12-15_15.jpg	https://hmisemi.com/hmi-introduces-16v-20a-advanced-hot-swap-e-fuse-for-robust-load-protection-and-efficient-power-management/	hmisemi.com
Excellent Performance Award	Asahi Kasei received a 2024 TSMC Excellent Perform...	12226	Industry News	Excellent Performance Award	Asahi Kasei received a 2024 TSMC Excellent Performance Award for its Pimel™ photosensitive Polyimide material, in recognition of its "Excellent Technology Collaboration and Production Support in Advanced Packaging" at the 2024 Supply Chain Management Forum held by Taiwan Semiconductor Manufacturing. TSMC presents the Excellent Performance Award to suppliers that have made remarkable contributions to its technology leadership and manufacturing with advanced semiconductor processes over the past year. At the award ceremony, TSMC Chairman & CEO Dr. C.C. Wei thanked suppliers for delivering timely and high-quality professional services to drive continuous improvement of the supply chain and related industries. Pimel has been used for worldwide semiconductor applications such as buffer coatings, passivation layers for bumping, and dielectric layers for re-distribution bumping. With a new plant for Pimel scheduled to start operation this year, Asahi Kasei looks forward to providing swift and reliable supply of products that support advanced semiconductor manufacturing processes.	05.12.2024 12:00:00	Dec	news_2025-01-01_7.jpg	\images\news_2025-01-01_7.jpg	https://www.asahi-kasei.com/news/2024/e241205.html	asahi-kasei.com
Laboratory for Transformer Prototypes	Wurth Electronics Midcom, German Branch, with EU h...	12224	Industry News	Laboratory for Transformer Prototypes	Wurth Electronics Midcom, German Branch, with EU headquarters in Munich, has opened a laboratory for the production of transformer prototypes at the Hightech Innovation Center in Munich-Freiham. The company, which specializes in transformers for switch-mode power supplies and customized inductive components, is part of the Würth Elektronik eiSos Group. In Munich, they produce custom magnetics prototypes. The main purpose of the new capacities is to promote intensive and transparent collaboration with customers. In-house prototype development and production enables the design engineers to also accompany their process in its implementation. All products are tested individually. The facility's technical equipment offers opportunities for R&D projects and patent development. Students and young talents also benefit from the site's equipment for research and final theses. In the future, prototypes of high-performance products and wireless power coils will also be produced here at the Hightech Innovation Center in Munich.	05.12.2024 10:00:00	Dec	news_2025-01-01_5.jpg	\images\news_2025-01-01_5.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=midcom-lab	we-online.com
Partnership achieves over 99.6% Efficiency in GaN Inverters for Evs	VisIC Technologies and AVL announced a partnership...	12223	Industry News	Partnership achieves over 99.6% Efficiency in GaN Inverters for Evs	VisIC Technologies and AVL announced a partnership aimed at advancing high-efficiency GaN inverter technology for the EV market. This collaboration intends to "provide automotive OEMs with power semiconductors that exceed silicon carbide (SiC) performance, while offering lower costs at device and system level". In a recent test conducted at AVL's facilities in Germany, an inverter based on VisIC's GaN-on-Silicon D³GaN components achieved an efficiency level of 99.67 % at 10 kHz, stunningly climbing to over 99.8 % efficiency at 5 kHz - which outperforms comparable SiC inverters by up to 0.5 % and is cutting energy losses by more than 60 %. VisIC's GaN-on-Silicon power devices can be produced in widespread 200 mm and 300 mm silicon foundries, which makes scaling production a straightforward process. Looking ahead, AVL and VisIC plan to expand their GaN-on-Si platform to include 800V GaN power modules, ensuring that their technology remains scalable and adaptable to the needs of the growing BEV market.	05.12.2024 09:00:00	Dec	news_2025-01-01_4.jpg	\images\news_2025-01-01_4.jpg	https://visic-tech.com/visic-technologies-and-avl-forge-partnership-achieving-over-99-6-efficiency-in-gan-inverters-for-electric-vehicles/	visic-tech.com
Donation to Charity instead of Christmas Gifts	Vincotech has again opted to embrace the seasonal ...	12205	Industry News	Donation to Charity instead of Christmas Gifts	Vincotech has again opted to embrace the seasonal spirit of charity. In lieu of sending gifts to customers, the company is presenting 12,000 Euros to its partner in philanthropy, Plan International Germany. Donated on behalf of its workforce and customers, these funds will support a development project in Ecuador. Youngsters, and girls especially, in ten communities in the Cotopaxi and Santa Elena regions stand to benefit from this initiative. It aims to impart business, digital, and soft skills that will help get them off to a better start in working life. The project also provides health services to mothers and children. This is Vincotech's second contribution to the project. The company had staged a virtual reality challenge at the PCIM Europe trade fair in May 2024 to raise funds for Plan International Germany. Fairgoers rose to the occasion. Vincotech and its partners rewarded their efforts by pledging €15,000 to upskill young Ecuadorians and furnish health services.	05.12.2024 08:00:00	Dec	news_2024-12-15_3.JPG	\images\news_2024-12-15_3.JPG	https://www.vincotech.com/news/company-news/article/vincotech-gives-eur12000-christmas-gift.html	vincotech.com
SiC Partnership between Automotive OEM and Semiconductor IDM	STMicroelectronics and Renault Group's Ampere have...	12203	Industry News	SiC Partnership between Automotive OEM and Semiconductor IDM	STMicroelectronics and Renault Group's Ampere have entered a multi-year agreement, effective from 2026, for the supply of Silicon Carbide (SiC) power modules. The multi-year agreement is aligned with Ampere's strategy of working upstream with its partners. The two companies have worked together on the optimization of a new power module, the key element in the powerbox. The powerbox combines three SiC-based power modules, an excitation module, which provides the necessary electrical excitation to the motor or generator for controlling the magnetic field within the motor, and a cooling baseplate designed to dissipate heat from the back side of the power module, simplifying the thermal management and cooling process. It is designed for both 400 V and 800 V battery systems, with the latter allowing rapid charging from 10% to 80% in under 15 minutes.	03.12.2024 06:00:00	Dec	news_2024-12-15_1.jpg	\images\news_2024-12-15_1.jpg	https://newsroom.st.com/media-center/press-item.html/c3299.html	st.com
Coupling Transmission Lines e. g. in PoE Systems	Würth Elektronik has expanded its WE-BAL series of...	12219	Product Release	Coupling Transmission Lines e. g. in PoE Systems	Würth Elektronik has expanded its WE-BAL series of baluns. The components for coupling symmetrical and asymmetrical transmission lines feature improved materials and manufacturing processes, and now cover wider frequency ranges from 673 MHz to 5900 MHz. In applications, such as antenna systems, audio and video devices, wireless communication systems, PoE systems, and measuring instruments, it is necessary to couple symmetrical and asymmetrical transmission lines in such a way that prevents signal loss. The SMT baluns with symmetrical impedance ranging from 50 to 200 Ω are integrated in 0603 and 0805 packages and operate with an insertion loss of up to a maximum of 2.0 dB.	02.12.2024 15:30:00	Dec	news_2024-12-15_17.jpg	\images\news_2024-12-15_17.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=we-bal	we-online.com
Acquisition in Current Sensor Business	Isabellenhütte Heusler has acquired Rathgeber as o...	12207	Industry News	Acquisition in Current Sensor Business	Isabellenhütte Heusler has acquired Rathgeber as of December 1, 2024. Both companies have a long-standing business relationship: As an external manufacturing service provider, Rathgeber was entrusted by Isabellenhütte with the punching of resistance bands, from which the ISA-WELD resistor series for current measurement is manufactured. Isabellenhütte expects to gain a strategic advantage from the acquisition. Rathgeber specializes in the production of temperature regulators for various markets. Isabellenhütte can thus supplement its product portfolio in measurement technology, expand its manufacturing expertise and strengthen its competitiveness.	02.12.2024 10:00:00	Dec	news_2024-12-15_5.jpg	\images\news_2024-12-15_5.jpg	https://www.isabellenhuette.de/en/news/isabellenhuette-acquires-rathgeber-gmbh	isabellenhuette.de
Explore the Benefits of GaN-Based Power Electronics in the latest eBook	Mouser Electronics announces an eBook in collabora...	12239	Industry News	Explore the Benefits of GaN-Based Power Electronics in the latest eBook	Mouser Electronics announces an eBook in collaboration with Analog Devices and Bourns exploring the challenges and benefits of Gallium Nitride (GaN) technology in the pursuit of efficiency, performance, and sustainability. <i>"10 Experts Discuss Gallium Nitride Technology"</i> explores how GaN technology, which enables higher efficiency, faster switching speeds, and greater power density than silicon, is revolutionising power electronics. The advantages of GaN technology offer far-reaching implications across various industries, from automotive and industrial applications to consumer electronics and renewable energy. The eBook provides insights from experts from ADI, Bourns, and other companies on the benefits of GaN, the challenges first-time GaN designers might face, and how to best navigate the transition from silicon to GaN. The eBook also highlights relevant products from ADI and Bourns, including GaN controllers and drivers, power inductors, and more.	27.11.2024 07:00:00	Nov	news_2025-01-15_2.jpg	\images\news_2025-01-15_2.jpg	https://resources.mouser.com/manufacturer-ebooks/adi-bourns-10-experts-discuss-gallium-nitride-technology-mg	mouser.com
Automotive-Grade SiC MOSFETs in TC3PAK Package	Inventchip Technology released four automotive-gra...	12210	Product Release	Automotive-Grade SiC MOSFETs in TC3PAK Package	Inventchip Technology released four automotive-grade SiC MOSFETs in the TC3PAK package: IV2Q12080K1Z, IV2Q12040K1Z, IV3Q12035K1Z and IV3Q12021K1Z. They are rated at 1200 V with resistance values of 80 mΩ, 40 mΩ, 35 mΩ and 21 mΩ respectively. The TC3PAK package, designed for topside cooling, boasts a 125 mm² metal tab surface, significantly enhancing heat dissipation capabilities. Compared to the traditional TO-263/D2PAK package, the TC3PAK's heat dissipation area is over 200 % larger, effectively halving the thermal resistance between the case and the heatsink. This design not only improves thermal management but also facilitates a more efficient heat dissipation process. Unlike TO-263/D2PAK packages that depend on PCB for heat dissipation and conduction, TC3PAK allows direct heat conduction to a heatsink via its topside metal tab. Furthermore, the TC3PAK package is 23 % thinner, measuring under 3.6 mm in height, compared to the TO-263/D2PAK, which makes it more suitable for low profile designs. Its large lead frame can support a large die, such as a 5 mm x 6 mm die, or multiple dies, providing ample space for future power upgrades without the necessity for a new package format. The TC3PAK package is engineered for surface mounting with a top-side connection to an external heatsink and facilitates the automatic assembly of the PCB-power devices-heatsink stack.	27.11.2024 06:30:00	Nov	news_2024-12-15_8.jpg	\images\news_2024-12-15_8.jpg	https://www.inventchip.com.cn/en/	inventchip.com.cn
Linear Hall Effect IC for General Use Devices	ABLIC's S-5611A is a programmable linear Hall eff...	12250	Product Release	Linear Hall Effect IC for General Use Devices	ABLIC's S-5611A is a programmable linear Hall effect IC which achieves high speed response of 1.25µs as well as low noise performance of 0.09µT/√Hz, for accurate measurement of even minute current fluctuations, allowing it to contribute to improving inverter control performance. The product is also equipped with a frequency band selection function which makes it possible to select 400kHz, 200kHz, or 100kHz with just this single IC. The noise generated by the IC can be reduced even further by selecting a lower frequency. It also features a function which compensates for magnetic core characteristic changes caused by temperature, allowing for high core current sensor accuracy in a wide range of temperatures. These characteristics contribute to reduced power consumption and lower CO<sub>2</sub> emissions and make this an ideal IC for building current sensors to be equipped in environmentally friendly, highly energy efficient, high-accuracy inverters and DC-DC converters.	26.11.2024 12:30:00	Nov	news_2025-01-15_13.jpg	\images\news_2025-01-15_13.jpg	https://www.ablic.com/en/semicon/products/sensor/linear-hall-effect-sensor-ic/s-5611a/	ablic.com
Family of Full-Bridge Transformer Drivers for compact Gate Driver Supplies	Infineon introduced the EiceDRIVER™ Power 2E...	12261	Product Release	Family of Full-Bridge Transformer Drivers for compact Gate Driver Supplies	Infineon introduced the EiceDRIVER™ Power 2EP1xxR family of full-bridge transformer drivers for IGBT, SiC and GaN gate driver power supplies. With the 2EP1xxR family, the company provides a solution for isolated gate driver supply. By using the devices, asymmetrical output voltages can be implemented to supply isolated gate drivers in a cost-effective and space-saving manner. This makes the 2EP1xxR particularly suitable for industrial or consumer applications requiring isolated gate drivers, including solar applications, electric vehicle charging, energy storage systems, welding, uninterruptible power supplies and drive applications. The 2EP1xxR family comes in a compact TSSOP8 pin package with power integration and optimizations to generate an asymmetric output voltage. The family is optimized for asymmetric gate driver supply through its unique duty-cycle adjustment capability. The devices support an input voltage range up to 20 V. They also offer integrated temperature, short-circuit and undervoltage lockout (UVLO) protection to prevent unwanted system faults. The 2EP1xxR family is available in the following four product variants: 2EP100R and 2EP101R are optimized for low component count designs for IGBT and SiC MOSFET gate driver power supplies. 2EP110R allows fine adjustment of the duty-cycle to match the output voltage ratio to the application requirements of SiC and GaN power switches. 2EP130R is optimized for highly flexible designs to meet different application requirements. The device offers 5-stage overcurrent protection, 41 selectable switching frequencies or synchronization with external PWM for transformer matching, and 41 selectable duty-cycle options to adjust the output voltage.	26.11.2024 09:30:00	Nov	news_2025-02-01_10.jpg	\images\news_2025-02-01_10.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFGIP202411-029.html	infineon.com
Semiconductor Company cooperates with Automotive Tier-1 Supplier	ROHM Semiconductor and Valeo announced they are co...	12204	Industry News	Semiconductor Company cooperates with Automotive Tier-1 Supplier	ROHM Semiconductor and Valeo announced they are collaborating to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Silicon Carbide (SiC) molded module TRCDRIVE™ pack to Valeo for future powertrain solutions. Valeo focuses on efficient, electrified mobility across various vehicle types and markets from the smallest one (ebikes), through the mainstream (passenger cars) to the largest one (eTrucks). ROHM and Valeo have been collaborating since 2022, initially focusing on technical exchanges aimed at improving the performance and efficiency of the motor inverter. By refining power electronics, both companies aim to offer optimized cost/performance by delivering higher energy efficiency, reducing heat generation thanks to an optimized cooling and mechatronic integration, and increasing overall reliability with a SiC packaging. Valeo will start supplying a first series project in early 2026.	26.11.2024 07:00:00	Nov	news_2024-12-15_2.jpg	\images\news_2024-12-15_2.jpg	https://www.rohm.com/news-detail?news-title=2024-11-26_news_valeo&defaultGroupId=false	rohm.com
High Speed & High Power DC Electronic Load	One of the features of the IT8900G/L series high p...	12214	Product Release	High Speed & High Power DC Electronic Load	One of the features of the IT8900G/L series high power DC electronic load from ITECH is its fast current dynamic response. Compared with its predecessor, the current rise/fall speed of this device has been increased by 3-4 times, ensuring that users are able to capture even smaller fluctuations in real time when dealing with complex load changes. Especially in scenarios that require high-speed response, such as testing server power supplies, DC/DC modules, and on-board chargers (OBCs), theIT8900G/L demonstrates its processing capabilities. The IT8906G-150-600 model can provide 0…600 A under 30 kHz dynamic band load conditions. To further optimize stability in high-frequency testing, ITECH has also introduced a low-inductance test line, which significantly reduces electromagnetic interference during rapid current changes for efficient and accurate signal transmission. The device supports load testing down to 0.075 V / 60 A and 0.75 V / 600 A with an internal resistance of 0.7 mΩ, making the IT8900G/L a test tool for fuel cells, supercapacitors, and solar cells.	22.11.2024 10:30:00	Nov	news_2024-12-15_12.jpg	\images\news_2024-12-15_12.jpg	https://www.itechate.com/en/news/IT8900GL%20.html	itechate.com
"A much better Way to conduct Heat away from the Die" – especially in GaN Applications	QPT has just filed a patent for a way to attach di...	12206	Industry News	"A much better Way to conduct Heat away from the Die" – especially in GaN Applications	QPT has just filed a patent for a way to attach dies to the heat spreaders or substrates which are typically Aluminium Nitride (AlN), which it calls <i>qAttach™</i>. This is said to provide "a much better way to conduct heat away from the die and also increases reliability" as the assembly process places less stress on the substrates, which is one of the biggest challenges the high-power semiconductor packaging industry faces. QPT developed this <i>qAttach</i> process for use with the Gallium Nitride (GaN) transistors that it uses in its electric motor control designs to enable them to handle the huge amounts of waste heat that results from using them for high power, high voltage applications and at high frequency. GaN transistors are now being made that are rated for high voltages but the die size is relatively small for high voltage transistors, which means there is less surface area to remove heat from. As a result, they are often down rated to enable them to function without overheating.<i>qAttach</i> solves this problem as now significantly more heat can be efficiently removed from the die so that it will not overheat. This opens up GaN to now be efficiently used for next generation, high power, high voltage applications in automotive, industrial motors and to finally deliver on the promise of low cost, high voltage GaN transistors.	21.11.2024 09:00:00	Nov	news_2024-12-15_4.jpg	\images\news_2024-12-15_4.jpg	https://www.q-p-t.com/press-releases/qpt-solves-major-problem-of-waste-heat-removal-in-power-electronics-with-novel-die-attach-process	q-p-t.com
600 W Open Frame Power Supply for Medical and Industrial Applications	Murata Manufacturing has introduced the PQC600 ope...	12195	Product Release	600 W Open Frame Power Supply for Medical and Industrial Applications	Murata Manufacturing has introduced the PQC600 open-frame AC to DC power supply, which caters to the needs of the latest medical and industrial applications, such as hospital beds, dentist chairs, medical equipment, and industrial process machinery. It offers 600 W of power within a package that is less than 1U in height and is certified to the IEC 60601-1 Edition 3 medical safety standard, which includes 2 Means of Patient Protection (MOPP) from primary to secondary, 1 MOPP from the chassis to ground and 1 MOPP from output to chassis. Additionally, the PQC600 complies with the IEC 60601-1-2 4th Edition for EMC standards, ensuring robust electromagnetic compatibility, and is suitable for use with medical devices that have Type B or Type BF applied parts. With a 600W forced-air cooling design, it achieves an efficiency of 95 % at full load. The power supply features an interleaved Power Factor Correction (PFC) and back-end synchronous rectification. Furthermore, the power supply includes a droop current sharing feature, enabling multiple units to be configured in parallel for greater power scalability.	21.11.2024 08:30:00	Nov	news_2024-12-01_10.jpg	\images\news_2024-12-01_10.jpg	https://www.murata.com/en-eu/news/power/ac-dc-converters/2024/1121	murata.com
Chief Operating Officer started in Office	Effective November 1, 2024, Markus Fischer, the fo...	12187	People	Chief Operating Officer started in Office	Effective November 1, 2024, Markus Fischer, the former Executive Vice President Operations, has been appointed to the Rohde & Schwarz Executive Board. As Chief Operating Officer (COO), he will collaborate with Christian Leicher (CEO) and Andreas Pauly (CTO) to continue to keep the company on course for growth in these challenging times. As Chief Operating Officer, Markus Fischer will be responsible for most of the operative business of Rohde & Schwarz. Andreas Pauly, who joined the Executive Board as Chief Technology Officer in October 2023, will retain his primary responsibility for innovation, research and development. Managing Partner Christian Leicher will continue to head the Executive Board as President and CEO. Markus Fischer (44) joined the technology group in 2011 as Head of Corporate Material Sourcing at Munich headquarters. After another management role at Rohde & Schwarz Messgerätebau GmbH in Memmingen, he assumed overall responsibility for the group's supply chain in 2017. In July 2020, he was appointed Executive Vice President Operations, becoming a member of Corporate Management. In that role, Fischer was responsible for all Rohde & Schwarz production activities as well as the supply chain and procurement. The technology group's five production plants have a high degree of vertical integration. As Executive Vice President Operations, Fischer focused above all on improving such key aspects as efficiency, flexibility and scalability. Consequently, his division not only ensured delivery capability in times of uncertain supply chains, but also contributed substantially to the stability of Rohde & Schwarz.	21.11.2024 07:00:00	Nov	news_2024-12-01_2.jpg	\images\news_2024-12-01_2.jpg	https://www.rohde-schwarz.com/uk/about/news-press/all-news/new-chief-operating-officer-at-rohde-schwarz-press-release-detailpage_229356-1531917.html	rohde-schwarz.com
Programmable Mixed-Signal ICs, Including Low-Power Device with 14-Bit SAR ADC	Renesas announced AnalogPAK ICs, including lower p...	12200	Product Release	Programmable Mixed-Signal ICs, Including Low-Power Device with 14-Bit SAR ADC	Renesas announced AnalogPAK ICs, including lower power and automotive-qualified devices along with the industry’s first programmable 14-bit SAR ADC (Successive-Approximation Register Analog-Digital Converter). AnalogPAK devices are part of Renesas’ GreenPAK Family of Programmable Mixed-Signal Matrix products: NVM programmable devices integrating many system functions while minimizing component count, board space, and power consumption. GreenPAK and AnalogPAK ICs deliver functional replacement of mixed-signal standard products and stand-alone discrete circuits. They also provide hardware supervisory functions for SoCs and microcontrollers. GreenPAK and AnalogPAK devices are suited for consumer electronics, computing, white goods, industrial, communications, and automotive. Using Go Configure Software Hub and the GreenPAK Development Kit, designers can create and program a custom circuit in minutes. For example, the SLG47011 AnalogPAK device includes several D/A features including programable multichannel 14-bit SAR ADC with Programmable Gain Amplifier (PGA). The SLG47011 also has user-defined power saving modes for all macrocells that enable designers to switch off some blocks in sleep mode and therefore reduce power consumption to the µA level. The SLG47011 can be used to extend the performance of, or to offload an MCUs. It can also be used in conjunction with an MCU to replace a complex analog front-end (AFE). Key functions supported by the SLG47011 include measurement, data processing, logic control and data output.	20.11.2024 13:30:00	Nov	news_2024-12-01_15.jpg	\images\news_2024-12-01_15.jpg	https://www.renesas.com/en/about/newsroom/renesas-introduces-industry-s-first-complete-memory-interface-chipset-solutions-second-generation	renesas.com
Tool-in Ceremony for Semiconductor Fab	Samsung Electronics held a tool-in ceremony for it...	12192	Industry News	Tool-in Ceremony for Semiconductor Fab	Samsung Electronics held a tool-in ceremony for its semiconductor research and development complex (NRD-K) at its Giheung campus. About 100 guests, including those from suppliers and customers, were in attendance to celebrate the milestone. NRD-K broke ground in 2022 and is set to become a key research base for Samsung’s memory, system LSI and foundry semiconductor R&D. With its infrastructure, research and product-level verification will be able to take place under one roof. Samsung plans to invest about KRW 20 trillion (more than US-$ 14 billion) by 2030 for the complex in an area covering about 109,000 square meters within its Giheung campus. The complex will also include an R&D-dedicated line scheduled to begin operation in mid-2025. NRD-K will be set up with High NA extreme ultra-violet (EUV) lithography and new material deposition equipment aimed at accelerating the development of next-generation memory semiconductors such as 3D DRAM and V-NAND with more than 1,000 layers. In addition, wafer bonding infrastructure with innovative wafer-to-wafer bonding capabilities is also planned to dock.	18.11.2024 12:00:00	Nov	news_2024-12-01_7.jpg	\images\news_2024-12-01_7.jpg	https://news.samsung.com/global/samsung-reaches-key-milestone-at-new-semiconductor-rd-complex	samsung.com
Three Companies partner for Solar Inverter Designs	Mouser Electronics has partnered with onsemi and W...	12208	Industry News	Three Companies partner for Solar Inverter Designs	Mouser Electronics has partnered with onsemi and Würth Elektronik to address the growing solar inverter market. onsemi's Silicon Carbide (SiC) solutions address the needs for the highest levels of efficiency, reliability, and safety while their boost and inverter power integrated modules (PIMs) anchor the grid-interface electronics. Würth Elektronik's gate drivers, sensing control, and peripheral power products complete the system. E. g. the onsemi NXH40B120MNQ1 is an EliteSiC PIM containing a dual full SiC boost stage. The Würth Elektronik WE-AGDT high-power auxiliary gate drive transformers feature unipolar and bipolar outputs, making them suitable for powering state-of-the-art SiC MOSFET gate drivers up to 6W of power as well as IGBT and power MOSFETs.	18.11.2024 11:00:00	Nov	news_2024-12-15_6.jpg	\images\news_2024-12-15_6.jpg	https://eu.mouser.com/newsroom/publicrelations-onsemi-wurth-solar-2024final/?utm_source=publitek-media-for-pr&utm_medium=pr&utm_campaign=EMEA_PR&utm_content=2024&pid=mouser&cid=pr	mouser.com
A very short Look back at electronica 2024	From November 12 to 15,2024 a total of 3,480 exhib...	12191	Event News	A very short Look back at electronica 2024	From November 12 to 15,2024 a total of 3,480 exhibitors presented their innovations across the entire spectrum of electronics to about 80,000 visitors at the electronica trade fair in Munich, Germany. In addition to sustainability, key topics such as artificial intelligence, the future of mobility, and the development of young talent sparked discussions at the exhibition stands and at the supporting program. The equally successful SEMICON Europa took place concurrently in two of the 18 halls. The organizer, Messe München, is “delighted that the trade fair was once again held at the same high level as before the pandemic and that the atmosphere was very positive despite the challenging times”. In order to attend electronica show, which had its debut exactly 60 years before, 3,480 exhibitors traveled from 59 countries and regions, with 76 percent of them from abroad. There were around 80,000 visitors from around 100 countries and regions. The share of international visitors totaled 54 percent. After Germany, the top 10 visitor countries were: Italy, China, France, Austria, United Kingdom, Switzerland, USA, Spain, Netherlands and Poland.<br>Some trivia: Roland R. Ackermann, the Correspondent Editor Bavaria of Bodo’s Power Systems, had already visited the very first electronica show 60 years ago while he was delighted to greet so many friends and business friends at this year’s electronica show as well. The next electronica will take place from November 10 to 13, 2026.	15.11.2024 11:00:00	Nov	news_2024-12-01_6.jpg	\images\news_2024-12-01_6.jpg	https://electronica.de/en/trade-fair/journalists/press-releases/detail/final-report-electronica-2024.html	electronica.de
GaN Design and Development Center in Ottawa, Canada	The French company Wise-integration, which is acti...	12190	Industry News	GaN Design and Development Center in Ottawa, Canada	The French company Wise-integration, which is active in digital control of gallium nitride (GaN) and GaN ICs for power conversion, has opened its North American Design & Development Center in Ottawa, Ontario, Canada. Led by Christian Cojocaru and staffed by experts in analog and digital technology design, the center will drive the development of the company’s design portfolio for the next generations of WiseGan®. By maximizing the high-frequency capabilities of GaN without added power losses, the next generations of the two product lines are said to “enable significant reductions in system size and cost, while boosting overall conversion efficiency”. Since its launch in 2020, the fabless company has established more than 20 patent families for its two core product lines. WiseGan includes GaN power integrated circuits designed for high-frequency operation in the MHz range, integrating features that streamline implementation with digital control. WiseWare is a 32-bit, MCU-based AC/DC digital controller optimized for GaN-based power-supply architectures. The company recently announced the launch of a subsidiary in Hong Kong.	15.11.2024 10:00:00	Nov	news_2024-12-01_5.jpg	\images\news_2024-12-01_5.jpg	https://wise-integration.com/wise-integration-expands-in-north-america-with-ottawa-design-center-to-develop-next-gen-wisegan-digital-solutions/	wise-integration.com
Supercaps under Development	Supercaps, also known as supercapacitors, are a sp...	12234	Product Release	Supercaps under Development	Supercaps, also known as supercapacitors, are a special type of energy storage device that combine certain properties of batteries with those of capacitors. In this way, they can store enormous amounts of energy and release it again very quickly, which makes them particularly valuable for many applications. While conventional capacitors store energy by separating electric charges in an electric field and are characterized by their high power density, they have a very low energy density and are therefore not suitable for long-term applications. Batteries, on the other hand, store energy through electrochemical reactions, which gives them a high energy density and therefore the ability to release energy over the long term. However, their power density is low and they are unsuitable for fast charging and discharging cycles. Supercapacitors close this gap by offering a higher energy density than normal capacitors and a higher power density than batteries, making them ideal for applications with short charge and discharge cycles. Schurter is in the process of developing standard and application-specific supercapacitor products.	14.11.2024 13:30:00	Nov	news_2025-01-01_15.jpg	\images\news_2025-01-01_15.jpg	https://www.schurter.com/en/news/supercaps-ultra-compact-power	schurter.com
DC/DC Converters for Industrial and Railway Environments	CUI announces two high-performance isolated DC/DC ...	12216	Product Release	DC/DC Converters for Industrial and Railway Environments	CUI announces two high-performance isolated DC/DC converters, the PRC300 and 600 series, both designed with 4.2 kV isolation to support engineers in e-mobility, railway, and industrial industries. The PRC300 series, which is UL/EN/IEC 62368-1 certified, has several special features reinforced insulation and baseplate cooling. The PRC600 series offers 600 W of power in a compact brick package and positive and negative logic options, which is well-suited for a variety of industrial and high-voltage applications. Additional features include remote ON/OFF control and output voltage trimming. The industry standard half and full brick packages both offer a high input voltage range of 180 to 400 V<sub>DC</sub> and an operating temperature ranging between -40 and +100 °C. The converters provide several protection features, including over-current, over-temperature, over-voltage, short circuit, and input under-voltage protections. In addition, they meet EN 61373 and EN 45545-2.	13.11.2024 12:30:00	Nov	news_2024-12-15_14.jpg	\images\news_2024-12-15_14.jpg	https://www.cui.com/news/press-releases/cui-inc.-releases-high-performance-dc-to-dc-converters-for-industrial-and-railway-environments	cui.com
Linear FET 2 MOSFET for Hot-Swap and Battery Protection	The safe hot-swap operation in AI servers and tele...	12215	Product Release	Linear FET 2 MOSFET for Hot-Swap and Battery Protection	The safe hot-swap operation in AI servers and telecom requires MOSFETs with a robust linear operating mode as well as a low R<sub>DS(on)</sub>. Infineon Technologies addresses this challenge with its OptiMOS™ 5 Linear FET 2 – a “MOSFET designed to provide the ideal trade-off between the R<sub>DS(on)</sub> of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET”. The device prevents damage to the load by limiting the high inrush current and ensures low losses during operation. Compared to the previous generation (the OptiMOS Linear FET), the OptiMOS Linear FET 2 offers improved SOA at elevated temperatures and reduced gate leakage current, as well as a wider range of packages. This allows for more MOSFETs to be connected in parallel per controller, reducing bill-of-material (BOM) costs and offering more design flexibility due to the extended product portfolio. The 100 V OptiMOS 5 Linear FET 2 is available in a TO-leadless package (TOLL) and offers a 12 times higher SOA at 54 V at 10 ms and 3.5 times higher SOA at 100 µs compared to a standard OptiMOS 5 with similar R<sub>DS(on)</sub>. The latter improvement is particularly important for the battery protection performed inside the battery management system (BMS) in case of a short circuit event. This enables high power density, efficiency, and reliability for battery protection which are used in a wide range of applications including power tools, e-bikes, e-scooters, forklifts, battery back-up units and battery-powered vehicles.	13.11.2024 11:30:00	Nov	news_2024-12-15_13.jpg	\images\news_2024-12-15_13.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFPSS202411-023.html	infineon.com
Collaboration to Advance Plug & Charge	Vector and Hubject now collaborate to further adva...	12189	Industry News	Collaboration to Advance Plug & Charge	Vector and Hubject now collaborate to further advance the Plug & Charge (PnC) technology. The aim is to simplify the electric vehicle (EV) charging process. With more than 2.6 million PnC-ready vehicles already on the market and more EVs on the horizon, the partnership helps to accelerate the adoption and implementation of PnC technology. Through this collaboration, automotive OEMs and charging station manufacturers can now obtain the Hubject QA (Pre-Production) and Production Certificates via the Vector Security Manager with the latest release of the development and test tool CANoe Version 18 SP3. The Vector Security Manager is the link between the Vector tools and the OEM-specific security implementations. With it, security functions can be used uniformly in the tools. Hubject QA and Production Certificates are essential for testing EVs and Electric Vehicle Supply Equipment (EVSE) using the CANoe Test Package EV or CANoe Test Package EVSE from Vector. This integration ensures that both the vehicles and the charging stations meet the ISO 15118 standard of interoperability, conformity and market readiness. PnC offers a seamless user experience. It eliminates the need for physical cards or mobile apps to authenticate and initiate charging.	13.11.2024 09:00:00	Nov	news_2024-12-01_4.jpg	\images\news_2024-12-01_4.jpg	https://www.vector.com/at/de/news/news/vector-and-hubject-collaborate-to-advance-plug-charge/	vector.com
Cooperation for Development of Sensor ICs with Functional Safety	Novosense Microelectronics and Continental Automot...	12186	Industry News	Cooperation for Development of Sensor ICs with Functional Safety	Novosense Microelectronics and Continental Automotive Technologies have signed a memorandum to enhance strategic cooperation in the development of sensor ICs with functional safety, as well as for the global integration of Novosense’s products within Continental’s worldwide platforms. Products being co-developed include those for safety functions and system reliability – from airbag triggers to battery pack monitors. Novosense is a member of the AEC and an active developer for the global automotive industry. It has implemented an extensive R&D program for the sector that leverages a system-level understanding of automotive electronics, as well as a reliable product delivery supply chain.	13.11.2024 06:00:00	Nov	news_2024-12-01_1.jpg	\images\news_2024-12-01_1.jpg	https://www.novosns.com/en/company-news-318	novosns.com
Automotive grade residual Current Monitoring Sensor	LEM has designed an automotive grade residual curr...	12199	Product Release	Automotive grade residual Current Monitoring Sensor	LEM has designed an automotive grade residual current monitoring (RCM) type B sensor for bi-directional OBCs with ASIL B capabilities according to ISO26262 for transformer-less on-board chargers (OBCs). This sensor, called CDT, complies with all the relevant safety standards. The RCM type B sensor enables designers to react to the new ISO5474 Part 2 standard for AC power transfer. The standard focuses on electrically propelled road vehicles and outlines the functional and safety requirements for power transfer between the vehicle and an external electric circuit using AC. Part of a series that operates in conjunction with ISO5474 Part 1, the new standard covers conductive charging requirements for modes 2 and 3 according to IEC 61851-1, reverse power transfer through on-board standard socket-outlets or EV plugs, and voltages up to 1000V AC. The CDT detects differences in current between two points, identifying such faults as short circuits and enabling rapid isolation of faulty sections to prevent damage. LEM’s CDT sensor is suited for RCM type B for bi-directional OBCs, where residual currents are detected and monitored, including AC and DC leakage currents. Using LEM’s patented fluxgate technology the CDT sensor offers a level of accuracy of ± 0.5 mA @ 5 mA. The device also provides functions on the secured Serial Peripheral Interface (SPI) bus including dynamic fault selection, monitoring of T°C, leakage value and supply monitoring, but it also provides diagnostic functions, and it is able to work equally effectively with single-phase and 3-phase AC.	12.11.2024 12:30:00	Nov	news_2024-12-01_14.jpg	\images\news_2024-12-01_14.jpg	https://www.lem.com/en/lem-launches-first-automotive-grade-residual-rcm-b-sensor	lem.com
SiC Schottky Barrier Diodes for High-Voltage xEV Systems	ROHM Semiconductor announced surface mount SiC Sch...	12198	Product Release	SiC Schottky Barrier Diodes for High-Voltage xEV Systems	ROHM Semiconductor announced surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models (SCS2xxxNHR; AEC-Q101 qualified) for automotive applications such as onboard chargers (OBCs), which will soon be supplemented by eight additional models (SCS2xxxN) for industrial equipment such as FA devices and PV inverters. Adopting a specific package shape, it achieves a minimum creepage distance of 5.1 mm. These products utilize an original design that removes the center pin previously located at the bottom of the package, extending the creepage distance to a minimum of 5.1 mm, approximately 1.3 times greater than standard products. This minimizes the possibility of tracking (creepage discharge) between terminals, eliminating the need for insulation treatment through resin potting when surface mounting the device on circuit boards in high-voltage applications. Additionally, the devices can be mounted on the same land pattern as standard and conventional TO-263 package products, allowing the replacement on existing circuit boards. Two voltage ratings are offered – 650 V and 1200 V – supporting 400 V systems commonly used in xEVs, as well as higher voltage systems expected to gain wider adoption in the future.	12.11.2024 11:30:00	Nov	news_2024-12-01_13.jpg	\images\news_2024-12-01_13.jpg	https://www.rohm.com/news-detail?news-title=2024-11-12_news_sbd&defaultGroupId=false	rohm.com
120 V/4 A Half-Bridge Gate Driver for Automotive Applications	Nexperia introduced a series of high-performance g...	12196	Product Release	120 V/4 A Half-Bridge Gate Driver for Automotive Applications	Nexperia introduced a series of high-performance gate driver ICs designed for driving both high-side and low-side N-channel MOSFETs in a synchronous buck or half-bridge configuration. The automotive-qualified NGD4300-Q100 is suited for electronic power steering and power converters, while the NGD4300 has been designed for use with DC/DC converters in consumer devices, servers and telecommunications equipment as well as for micro-inverters used in various industrial applications. The floating high-side driver in these ICs can operate from bus voltages up to 120 V and use a bootstrap supply with an integrated diode – features which simplify overall system design and help to reduce PCB size. They can deliver up to 4 A (peak) source and 5 A of sink current to enable short rise and fall times even for heavy loads. The gate driver has a 13 ns delay and offers a channel-to-channel delay matching of 1 ns. These delays help to minimize dead-time by maximizing switching duty-cycle. 4 ns rise and 3.5 ns (typical) fall times help to deliver higher efficiency and support high frequency and fast system control. These gate drivers accept input control signals complying with both TTL and CMOS logic levels. These ICs are fabricated using a silicon-on-insulator (SOI) process. This allows the negative voltage tolerance of the HS pin to extend to -5 V, significantly reducing the risk of damage caused by system parasitic component and unexpected spikes. The NGD4300 and NGD4300-Q100 are available in a choice of DFN-8, SO-8 and HSO-8 packages to offer engineers the flexibility to trade-off between device size and thermal performance, depending on application requirements.	12.11.2024 09:30:00	Nov	news_2024-12-01_11.jpg	\images\news_2024-12-01_11.jpg	https://www.nexperia.com/about/news-events/press-releases/Nexperia-s-new-120-V-4-A-half-bridge-gate-driver-raises-robustness-and-efficiency-in-automotive-applications	nexperia.com
Semiconductor Product Distribution Center opened in Germany	Texas Instruments has opened its product distribut...	12188	Industry News	Semiconductor Product Distribution Center opened in Germany	Texas Instruments has opened its product distribution center in Dreieich, Germany, close to Frankfurt, Germany. This distribution center includes 9,000 square meters of space and specific automation features. It has the capacity to quickly ship up to 7,500 orders per day. Located near Frankfurt Airport, the distribution center enables faster product delivery in Europe. The pick, pack and ship process is fully automated and orders are ready to ship within 15 minutes or less. Customers in central Germany can expect same-day product delivery, while next-day delivery is available to customers in most European countries. TI has been operating in Europe since 1956.	12.11.2024 08:00:00	Nov	news_2024-12-01_3.jpg	\images\news_2024-12-01_3.jpg	https://www.ti.com/about-ti/newsroom/news-releases/2024/2024-11-12-texas-instruments-accelerates-delivery-to-european-customers-with-opening-of-new-product-distribution-center-near-frankfurt--germany.html	ti.com
800 V GaN Inverter with 30 kW/l Power Density	Cambridge GaN Devices (CGD) and IFP Energies nouve...	12194	Product Release	800 V GaN Inverter with 30 kW/l Power Density	Cambridge GaN Devices (CGD) and IFP Energies nouvelles (IFPEN), a French public research and training organization in the fields of energy, transport and the environment, have developed a demo which confirms the suitability of CGD’s ICeGaN®650 V GaN ICs in a multi-level, 800 V<sub>DC</sub> inverter. The demo delivers a power density of 30 kW/l, which is greater than can be achieved by more expensive, state-of-the-art SiC-based devices. The inverter realization also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25 m&ohm; / 650 V ICeGaN ICs – 36 devices in total – in parallel. This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo features: a high voltage input of up to 800 V<sub>DC</sub>, 3-phase output, a peak current of 125 A<sub>RMS</sub> for 10 s or 180 A<sub>Peak</sub> and a continuous current of 85 A<sub>RMS</sub> continuous (120 A<sub>Peak</sub>). The improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. As GaN transistors can operate at much higher frequencies than silicon transistors, the iron losses in the motor, particularly in the case of machines with low inductances are reduced. The 3-level topology reduces EMI and enhances the reliability of the system. In terms of thermal management insulated metallized substrate boards featuring an aluminium core facilitate thermal dissipation for adequate operating temperatures, and this extends the lifespan of the system and associated GaN devices. The modular design facilitates scalability and adaptability for varying system requirements.	12.11.2024 07:30:00	Nov	news_2024-12-01_9.jpg	\images\news_2024-12-01_9.jpg	https://www.camgandevices.com/en/p/cgd-demos-800-vdc-multi-level-inverter-developed-using-gan-with-ifpen-that-outperforms-sic/	camgandevices.com
Facilitating SiC and GaN Power Testing	The Italian company CREA (Collaudi Elettronici Aut...	12211	Product Release	Facilitating SiC and GaN Power Testing	The Italian company CREA (Collaudi Elettronici Automatizzati) – a subsidiary of Advantest Europe – presented its solution for a variety of power devices, including SiC and GaN power testing on wafer, single-die, substrate, PKG, and module, typically used in industrial and automotive applications. PCI (Probe Card Interface) technology, patented by CREA, is a high-volume manufacturing test solution designed to work seamlessly with the CREA MT tester family. This combination enables high-power static, dynamic, and short circuit testing for Si, SiC, and GaN bare dies, particularly in Known Good Die (KGD) applications. PCI hardware allows monitoring the power levels maintained by each probe card needle in real-time, allowing test engineers to predict potential Device Under Test (DUT) failures during the test phase. Whenever a device failure is predicted, the PCI can react immediately (within 300 ns) by shutting off the probe card's power supply, safeguarding the equipment hardware (probe card, instruments) and the DUT. The system supports voltages up to 10 kV with a current capability up to 15 kA.	12.11.2024 07:30:00	Nov	news_2024-12-15_9.jpg	\images\news_2024-12-15_9.jpg	https://www.crea-test.com/	crea-test.com
IGBTs in several different Packages for up to 1700 V	Microchip Technology now offers its IGBT 7 devices...	12193	Product Release	IGBTs in several different Packages for up to 1700 V	Microchip Technology now offers its IGBT 7 devices in different packages, multiple topologies, as well as current and voltage ranges. The components are available in standard D3 and D4 62 mm packages, as well as SP6C, SP1F and SP6LI packages; they are intended for power applications in solar inverters, hydrogen ecosystems, commercial and agricultural vehicles and More Electric Aircraft (MEA). Many configurations are available in the following topologies: three-level Neutral-Point Clamped (NPC), three-phase bridge, boost chopper, buck chopper, dual-common source, full-bridge, phase leg, single switch and T-type. Devices can be provided with voltages ranging from 1200 V to 1700 V while currents range from 50 A to 900 A. Claimed to operate with a “lower on-state IGBT voltage (V<sub>ce</sub>), improved antiparallel diode (lower V<sub>f</sub>) and increased current capability” these components can enable lower power losses.	12.11.2024 06:30:00	Nov	news_2024-12-01_8.jpg	\images\news_2024-12-01_8.jpg	https://www.microchip.com/en-us/about/news-releases/products/introducing-a-wide-portfolio-of-igbt-7-power-devices-optimized	microchip.com
Efficient DC/DC Converters for Industrial, Railway and Challenging Environments	With its HAE300W series P-DUKE increases the outpu...	12227	Product Release	Efficient DC/DC Converters for Industrial, Railway and Challenging Environments	With its HAE300W series P-DUKE increases the output power capacity of its compact half-brick design DC/DC converter portfolio to up to 300 W. This series is engineered to fulfill the stringent requirements of industrial and railway (rolling stock) applications. Featuring a 4:1 input voltage range that spans 9 to 36, 18 to 75, and 40 to 160 V<sub>DC</sub>, the HAE300W series is suited for various power systems across different regions. It offers a selection of output voltage options, including 5, 12, 15, 24, 28, 48, and 54 V<sub>DC</sub>, with an adjustable output range of +10% to -20% using an external resistor. Equipped with several protective features, the HAE300W series takes care of system safety with over-current protection (hiccup mode), output over-voltage protection (hiccup mode), continuous and auto-recovery output short-circuit protection, input under-voltage lockout, output remote sensing, and remote control capabilities. It is certified to comply with industry standards such as IEC/EN/UL62368-1, EN 50155 and EN 45545. The HAE300W series meets MIL-STD 810F and EN 61373 standards for vibration and mechanical shock, and is operable at altitudes up to 5000 m.	12.11.2024 06:30:00	Nov	news_2025-01-01_8.jpg	\images\news_2025-01-01_8.jpg	https://www.pduke.com/news_detail28_173.htm	pduke.com
1200 V SiC MOSFETs in Bare Die Format	Toshiba has developed the X5M007E120, a 1200 V SiC...	12201	Product Release	1200 V SiC MOSFETs in Bare Die Format	Toshiba has developed the X5M007E120, a 1200 V SiC MOSFETs with an low on-resistance of 7.2 m&ohm;, which is particularly suited to applications within automotive traction inverters. The device has a V<sub>DSS</sub> of 1200 V and is rated for a drain current (I<sub>D</sub>) of 229 A continuously, with 458 A for pulsed operation (I<sub>D Pulse</sub>). These AEC-Q100 qualified devices can operate with channel temperatures (T<sub>ch</sub>) up to 175 °C. Engineering samples are expected to ship during 2025, with mass production samples scheduled to start in 2026.	12.11.2024 00:00:00	Nov	news_2024-12-01_16.jpg	\images\news_2024-12-01_16.jpg	https://toshiba.semicon-storage.com/eu/company/news/2024/11/sic-power-devices-20241112-1.html	toshiba.semicon-storage.com
Analog and Mixed-Signal Platform	onsemi introduced the Treo Platform, an analog and...	12185	Product Release	Analog and Mixed-Signal Platform	onsemi introduced the Treo Platform, an analog and mixed-signal platform built with Bipolar-CMOS-DMOS (BCD) process technology on an 65 nm node. This platform provides the foundation for a range of power and sensing solutions from the manufacturer including high-performance and low-power sensing, high-efficiency power management, and purpose-built communications devices. Using this single, scalable solution, users can accelerate product development for existing applications, and respond to emerging market opportunities. The Treo Platform features a modular, SoC-like architecture with a set of ever-evolving IP building blocks that make up the compute, power management, sensing, and communications subsystems. It offers digital processing capabilities and "better analog IP performance". With these capabilities, the platform can deliver local intelligence and compute for flexible configuration, as well as improve performance and accuracy in end applications. Additionally, the platform supports "the industry's widest voltage range of 1-90 V and operating temperatures up to 175 ° C", which allows engineers to integrate a range of low-to-high power functionality. Initial product families built on the Treo Platform are sampling now, including voltage translators, ultra-low-power AFEs, LDOs, ultrasonic sensors, multi-phase controllers, and single-pair Ethernet controllers. Through 2025, the semiconductor manufacturer will deliver new family members including: high performance sensors, DC/DC converters, automotive LED drivers, electrical safety ICs, connectivity, and more.	11.11.2024 15:30:00	Nov	news_2024-11-15_20.jpg	\images\news_2024-11-15_20.jpg	https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-introduces-the-industry-s-most-advanced-analog-and-mixed-signal-platform	onsemi.com
CGD and Qorvo collaborate on Motor Control Solutions	Cambridge GaN Devices (CGD) and Qorvo® have pa...	12220	Industry News	CGD and Qorvo collaborate on Motor Control Solutions	Cambridge GaN Devices (CGD) and Qorvo® have partnered "to bring together industry-leading motor control and power efficiency technologies" in the PAC5556A + ICeGaN® evaluation kit (EVK). This collaboration combines Qorvo's BLDC/PMSM motor controller/driver and CGD's ICeGaN ICs in a board that is claimed to "significantly improve motor control applications". By employing CGD's latest-generation P2 ICs, the PAC5556AEVK2 evaluation kit with 240 mΩ ICeGaN achieves up to 400 W peak performance without a heatsink, whilst the PAC5556AEVK3 with 55 mΩ ICeGaN hits 800 W peak with minimal airflow cooling. ICeGaN integrates essential current sense and Miller clamp elements. The PAC5556A + CGD GaN EVKs is said to "offer higher torque at low speeds and precise control", making them well-suited for white goods, ceiling fans, refrigerators, compressors and pumps. Target markets include industrial and home automation, especially where compact, high-efficiency motor control systems are required.	11.11.2024 06:00:00	Nov	news_2025-01-01_1.jpg	\images\news_2025-01-01_1.jpg	https://www.camgandevices.com/en/p/cgd-and-qorvo-set-to-revolutionize-motor-control-solutions/	camgandevices.com
Motor Suite for simplified Motor Control Development	Infineon Technologies launched its Motor Suite dub...	12197	Product Release	Motor Suite for simplified Motor Control Development	Infineon Technologies launched its Motor Suite dubbed ModusToolbox™, which is a solution of software, tools and resources for developing, configuring and monitoring motor control applications. With its ability to support different motor types, the solution intends to enable developers to bring high-performance motor control applications to market quickly and efficiently. The suite supports industrial, robotics, and consumer applications such as home appliances, HVAC, drones, and light electric vehicles. The suite streamlines development and testing, providing real-time parameter monitoring for relevant insights into motor performance, efficiency, and reliability. This enables engineers to identify issues, optimize designs, and enhance overall functionality. It also offers signal analysis, and customized status monitoring. ModusToolbox Motor Suite features automatic detection and recognition of supported boards and kits, real-time visualization and monitoring of motor control related signals. It also provides pre-configured algorithms and real-time monitoring of critical system parameters. Additionally, the solution offers algorithms to increase the control robustness across many motor types and applications. It currently includes out-of-the-box support for Infineon’s XMC7000 microcontrollers and will further expand its capability to include industrial MCUs, with PSOC™ Control integration confirmed for upcoming releases. It provides a graphical user interface for motor control development and an adaptable, hardware-abstracted motor control core library.	08.11.2024 10:30:00	Nov	news_2024-12-01_12.jpg	\images\news_2024-12-01_12.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFCSS202411-022.html	infineon.com
PLECS Conference 2025	Join the next PLECS Conference about Embedded Code...	12166	Event News	PLECS Conference 2025	Join the next PLECS Conference about Embedded Code Generation. The speakers are engineers from industry, research, and academia who will present current applications in this field. Engage with experts and network with over 100 participants in the discussion and networking area. Besides that, take the opportunity to exchange ideas with Plexim developers. The conference language will be English. Note that this is an on-site only event. The participation fee will be 700.00 Euros or Swiss Francs (incl. 8.1% VAT) and can be paid by invoice or credit card. The Plexim staff is excited to welcome you again in Zurich, on March 4 and 5, 2025!	08.11.2024 06:00:00	Nov	news_2024-11-15_1.png	\images\news_2024-11-15_1.png	https://www.plexim.com/events/seminars/2325	plexim.com
Galvanically isolated Gate Drivers provide Protection for IGBTs and SiC MOSFETs	STMicroelectronics' STGAP3S family of gate drivers...	12184	Product Release	Galvanically isolated Gate Drivers provide Protection for IGBTs and SiC MOSFETs	STMicroelectronics' STGAP3S family of gate drivers for silicon-carbide and IGBT power switches provide a reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, withstanding 9.6 kV transient isolation voltage (VIOTM) with 200 V/ns common-mode transient immunity (CMTI). Suited for motor drives for industrial applications such as air conditioning, factory automation, and home appliances the drivers are also used in power and energy applications including charging stations, energy storage systems, power-factor correction (PFC), DC/DC converters and solar inverters. The STGAP3S product family includes different options with 10 A and 6 A current capability, each of them available with differentiated Under Voltage Lock-Out (UVLO) and desaturation intervention thresholds. This helps designers select the best device to match the performance of their chosen SiC MOSFET or IGBT power switches. The Desaturation protection implements an overload and short-circuit protection for the external power switch providing the possibility to adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive overvoltage spikes. The undervoltage-lockout protection prevents turn-on with insufficient drive voltage. The driver's integrated Miller Clamp architecture provides a pre-driver for an external N-channel MOSFET. The available device variants allow a choice of 10 A sink/source and 6 A sink/source drive-current capability with desaturation-detection and UVLO thresholds optimized for IGBT or SiC technology. The fault conditions of desaturation, UVLO and overtemperature protection are notified with two dedicated open drain diagnostic pins.	07.11.2024 14:30:00	Nov	news_2024-11-15_19.jpg	\images\news_2024-11-15_19.jpg	https://newsroom.st.com/media-center/press-item.html/n4656.html	st.com
1200 V IGBTs for Automotive and Industrial Applications	ROHM has developed automotive-grade AEC-Q101 quali...	12183	Product Release	1200 V IGBTs for Automotive and Industrial Applications	ROHM has developed automotive-grade AEC-Q101 qualified 4<sup>th</sup> Generation 1200V IGBTs for vehicle electric compressors and HV heaters as well as industrial inverters. The current lineup includes four models - RGA80TRX2HR / RGA80TRX2EHR / RGA80TSX2HR / RGA80TSX2EHR - in two discrete package types (TO-247-4L and TO-247N), along with 11 bare chip variants - SG84xxWN - with plans to further expand the lineup in the future. In case of a short circuit these devices provide a withstand time of 10 µs (T<sub>j</sub>=25 °C) together with low switching and conduction losses while maintaining a withstand voltage of 1200 V. Its TO-247-4L package features 4 terminals, can accommodate an effective voltage of 1100 V in a 'Pollution Degree 2 environment' by ensuring adequate creepage distance between pins. High-speed switching is achieved by including a Kelvin emitter terminal, resulting in even lower losses. In fact, when comparing the efficiency of the new TO-247-4L packages with conventional and standard products in a 3-phase inverter, loss is reduced by about 24% compared to standard products and by 35% over conventional products.	07.11.2024 13:30:00	Nov	news_2024-11-15_18.jpg	\images\news_2024-11-15_18.jpg	https://www.rohm.com/news-detail?news-title=2024-11-07_news_igbt&defaultGroupId=false	rohm.com
New Sales Office and Service Center in Sydney, Australia	Magna-Power Electronics has opened Magna-Power Ele...	12170	Industry News	New Sales Office and Service Center in Sydney, Australia	Magna-Power Electronics has opened Magna-Power Electronics ANZ in Sydney, Australia. The establishment of the Sydney office enhances Magna-Power's local presence, providing dedicated support for existing and prospective customers in the region. With a product line ranging from 1.25 kW to over 10 MW and more than 400,000 product configurations, the company's solutions are well-suited to meet the varied power requirements of key Australian applications, including electrolyzers, defence, mining, water treatment, industrial power electronics, transportation, among many others. Leading the new office are industry veterans David Champion and Brian Chapman, who bring over 60 years of combined experience in electrical engineering and technology. The investment in the Sydney office is said to underscore the company's commitment to providing regional services to a wider customer base in the growing APAC market.	07.11.2024 10:00:00	Nov	news_2024-11-15_5.jpg	\images\news_2024-11-15_5.jpg	https://magna-power.com/company/news/2024-11-07-magna-power-sales-office-and-service-center-in-sydney-australia	magna-power.com
100 V Automotive-Grade Devices for Automotive LiDAR	Innoscience has added two 100 V automotive-grade G...	12178	Product Release	100 V Automotive-Grade Devices for Automotive LiDAR	Innoscience has added two 100 V automotive-grade GaN devices. The company's INN100W135A-Q (R<sub>DS(on),max</sub> = 13.5 mΩ) and smaller package INN100W800A-Q (R<sub>DS(on),max = 80</sub> mΩ) are both certified to AEC-Q101 and optimized for LiDAR as well as for high power density DC/DC converters, and Class D audio applications in the automotive sector. The INN100W135A-Q and the ultra-compact INN100W800A-Q, with a WLCSP package measuring 2.13 mm x 1.63 mm and 0.9 mm x 0.9 mm respectively, offer advantages in terms of size and power efficiency. Both devices are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. Parameters like Q<sub>g</sub> and Q<sub>oss</sub> are also improved by 1.5 to 3 times over their silicon counterparts. This results in medium to long-range recognition capabilities of 200/300m.	07.11.2024 08:30:00	Nov	news_2024-11-15_13.jpg	\images\news_2024-11-15_13.jpg	https://www.innoscience.com/site/details/966?el=mdnav	innoscience.com
60-V Variant of Power MicroModule Series	There's another generation of MagI³C-VDMM pow...	12182	Product Release	60-V Variant of Power MicroModule Series	There's another generation of MagI³C-VDMM power modules from Würth Elektronik: The input voltage range gives the new MicroModule a resistance to voltage transients on the 48 V bus. The adjustable output voltage ranges from 0.85 to 6 V with currents up to 0.3 A. The extended input voltage range of the Variable Step Down MicroModule from 3.5 to 60 V now covers bus voltages from 5 to 48 V, opening up applications from Point of Load (PoL) to direct 48 V bus voltage connection. So the MagI³C-VDMM series is suited as a replacement for linear regulators, for example in the power supply of interfaces, sensors, microcontrollers, microprocessors, DSPs and FPGAs. Operational areas include industrial, testing and measurement technology, medical devices and point-of-load DC/DC applications. Its efficiency of up to 86 percent supports "cool design", allowing its use in a temperature range from -40 to +105 °C. To save energy, the power module can be set to sleep mode using an additional pin, and the quiescent current is up to 3 µA. The integrated sync feature allows multiple Micromodules to synchronize to an external frequency while simultaneously meeting the requirements of EMC standard EN55032/CISPR32 Class B for radiated and conducted interference with verified filter combinations. The selectively controllable "spread spectrum" feature improves the EMC behavior.	06.11.2024 12:30:00	Nov	news_2024-11-15_17.jpg	\images\news_2024-11-15_17.jpg	https://www.we-online.com/en/components/products/MAGIC-VDMM	we-online.com