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| Sebastian Fischer appointed CEO of Traco Power Group | As part of a future-oriented growth strategy, Seba... | 12243 | People | Sebastian Fischer appointed CEO of Traco Power Group | As part of a future-oriented growth strategy, Sebastian Fischer has taken over the position of CEO of the Traco Power Group on January 1, 2025. Together with an experienced Group Management Team, he will drive the further development of the company. As before, Jennifer Caspar, company owner and Chair of the Board of Directors, together with her father Rolf Caspar and Ueli Wampfler, both members of the Board of Directors, will continue to focus on the strategic direction of the group. After more than a decade of successfully managing Traco Power Germany, Sebastian Fischer moved to the Swiss headquarters at the end of 2023, where he took on the role of Chief Commercial Officer (CCO). In this role, he managed all subsidiaries of the Traco Power Group and was responsible for the group-wide revenue and all commercial activities of the Traco Power Group. As of January 1, 2025, Fischer handed over his responsibilities as CCO to Florian Haas, who has successfully managed product management, IT and marketing in the Traco Power Group for seven years. Before joining Traco Power, Sebastian Fischer held senior management positions in industry, with a focus on technology-oriented areas. He graduated from Munich University of Applied Sciences in 2004 with a degree in electrical engineering and electronics, followed by an MBA. He completed a postgraduate course in business law at the University of Hagen in 2015. | 10.01.2025 13:00:00 | Jan | news_2025-01-15_6.jpg | \images\news_2025-01-15_6.jpg | https://www.tracopower.com/de/sebastian-fischer-appointed-new-ceo-traco-power-group | tracopower.com |
| Current Sensor ICs deliver Higher Isolation in a 40% Smaller Footprint | Allegro MicroSystems announced the launch of two c... | 12247 | Product Release | Current Sensor ICs deliver Higher Isolation in a 40% Smaller Footprint | Allegro MicroSystems announced the launch of two current sensor ICs - the ACS37030MY and the ACS37220MZ. Leveraging Allegro's sensing technology, these ICs provide low internal conductor resistance, high operating bandwidth and reliable performance across a wide range of automotive, industrial and consumer applications. Allegro's current sensor ICs are designed for precise current sensing in a compact and durable package. Featuring a widebody design, the ACS37030MY and ACS37220MZ deliver higher isolation in a 40% smaller footprint compared to the existing 16-pin packages on the market. The innovative designs also incorporate lower resistance, which helps to reduce power dissipation. The ACS37030MY is a fully integrated current sensor IC with fast response time for protection of wide bandgap GaN devices. It uses a combination of Hall-effect and inductive coil signal paths to sense current over a wide frequency range. This package offering enables a product which is both 5x faster than existing solutions, but also 40% smaller. ACS37030 is also available in a narrow-body package for lower isolation requirements. The ACS37220MZ fully-integrated, Hall-effect current sensor features a 150 kHz bandwidth and fault pin. This device is designed for value-line current sensing applications as a successor to the popular ACS724/5 family of products. The package of the ACS37220MZ offers a 40% smaller solution size and lower resistance for lower power dissipation. | 08.01.2025 09:30:00 | Jan | news_2025-01-15_10.jpg | \images\news_2025-01-15_10.jpg | https://www.allegromicro.com/en/about-allegro/newsroom/press-releases/2024/acs37030my-acs37220mz | allegromicro.com |
| Power Management IC for Energy Harvesting | Nexperia is expanding its energy harvesting portfo... | 12248 | Product Release | Power Management IC for Energy Harvesting | Nexperia is expanding its energy harvesting portfolio with the NEH71x0 power management IC (PMIC) family. These devices eliminate the need for an external inductor, reducing circuit board space and bill-of-materials (BOM) cost. It is available in a compact 4 mm x 4 mm QFN28 package. Applications include remote controls, key fobs, smart tags, asset trackers, occupancy sensors, environmental monitors, wearables, keyboards, tire pressure monitors, and any number of Internet of Things (IoT) applications. These PMICs represent a complete power management solution for energy harvesting: enabling engineers to extend battery life, recharge batteries or supercapacitors, and even eliminate batteries in certain designs, thanks to its cold start feature. With the NEH71x0 (NEH7100BU, NEH7110BU) PMICs, designers can choose from multiple ambient power sources such as light, kinetic/piezo or a temperature gradient. With an input power range from 15µW to 100mW, these high-performance energy harvesting ICs can convert energy with an efficiency of up to 95%. These devices include an on-chip maximum power point tracking (MPPT) adaptive algorithm to optimize the energy harvested, which adapts every 0.5 second, making the PMIC extremely responsive to changing environmental conditions. | 07.01.2025 10:30:00 | Jan | news_2025-01-15_11.jpg | \images\news_2025-01-15_11.jpg | https://www.nexperia.com/about/news-events/press-releases/Nexperia-enhances-Energy-Harvesting-portfolio-with-innovative-PMIC-reducing-BOM-cost | nexperia.com |
| Adding 250 Amp Series to its Digital Shunt Sensor Line | Bourns announced that it has further expanded its ... | 12244 | Product Release | Adding 250 Amp Series to its Digital Shunt Sensor Line | Bourns announced that it has further expanded its digital shunt sensor line with the release of the Riedon™ Model SSD-250A Series Shunt Sensor – Digital by Bourns. The 250 amp series is available in two versions: the RS-485 serial interface model, which can also be configured as MODBUS RTU, and a customizable CANbus model. Designed to give developers a broader range of measurement solutions with the benefits of digital, this series features 100 A, 250 A and 500 A nominal current, a -40 °C to +115 °C operating temperature range and 1500 VDC galvanic isolation that helps to enhance accuracy and operational stability. Offered in a compact System-in-Package (SIP), the Model SSD-250A Series delivers calibrated and temperature-compensated digital output, making these shunt sensors ideal current sensing solutions for a wide variety of battery-related applications including renewable energy systems, motor drives and EV charging stations. These shunt-based sensors also help eliminate the need for periodic device calibrations, all while providing highly accurate measurements that contribute to more efficient use of power. In addition, the series features considerably lower insertion resistance than passive shunt sensors and Hall Effect sensors. | 07.01.2025 06:30:00 | Jan | news_2025-01-15_7.jpg | \images\news_2025-01-15_7.jpg | https://www.bourns.com/news/press-releases/pr/2025/01/07/bourns-adds-250-amp-series-to-its-digital-shunt-sensor-line-broadening-range-of-measurement-solutions-for-battery-applications | bourns.com |
| Power Factor Correction Chokes for Applications from 100-1,000 Watts | ITG Electronics has further expanded its range of ... | 12246 | Product Release | Power Factor Correction Chokes for Applications from 100-1,000 Watts | ITG Electronics has further expanded its range of mid-tier power factor correction chokes (PFCs). Suitable for applications with continuous conduction requirements in the 100-1,000 Watt range, the company's PFC222222D Series are designed to meet rigorous AC to DC converter needs for the industrial, equipment and automotive industries. An extension of ITG Electronics' Cubic Design set of power factor correction chokes, PFC222222D Series solutions are viable for Inductance ranges from 260-4500uH and, at a maximum length/width of 21.5 x 22mm and height of 22mm, occupy an exceedingly compact footprint. Compared with traditional toroidal-shaped PFC chokes, the PFC222222DH Series features a flat wire and square core construction to save space and increase power density as much as threefold. The solutions are up to 50% smaller compared with toroidal-shaped PFC chokes with similar power ratings, and can reduce DC resistance by as much as 40%, leading to substantially lower copper losses. ITG Electronics' PFC222222D Series offers an alloy powder-based DIP Inductor that minimizes core loss, and the chokes' low-leakage magnetic flux further reduces energy loss and improves overall efficiency. PFC chokes also come free of any concerns related to thermal aging. The chokes can handle 12.4 Amp with approximately 50% roll off. | 06.01.2025 08:30:00 | Jan | news_2025-01-15_9.jpg | \images\news_2025-01-15_9.jpg | https://itg-electronics.com/en/series/945 | itg-electronics.com |
| 2025 Device Research Conference Announces Call for Papers | The Device Research Conference (DRC) has announced... | 12240 | Event News | 2025 Device Research Conference Announces Call for Papers | The Device Research Conference (DRC) has announced a Call for Papers for DRC 2025, the conference's 83rd anniversary. DRC will be held from June 22-25, 2025 at Duke University in Durham, NC. The DRC brings together leading scientists, researchers, and students from many disciplines in academia and industry to share their latest research and discoveries in device science, technology, and modeling, including many of the first disclosures of key device technologies. The DRC 2025 technical program offers a rich and diverse agenda, featuring three plenaries, seven keynotes, and 40 invited speakers that cover a broad spectrum of device-related topics. The program will include oral and poster sessions showcasing advanced research in electronic and photonic devices, evening panel discussions, and a special Focus Session on Devices for Heterogeneous Integration. The plenary talks will be delivered by leaders in device science and technology: Eli Yablonovitch, Nicky Lu, and Suman Datta. Other program highlights include a Short Course on Heterogeneous Integration, a Tutorial on modeling and simulations, and vibrant student participation, with Student Paper Awards recognizing exceptional contributions. DRC 2025 is held in coordination with the Electronic Materials Conference (EMC), recognizing the strong interaction between device and electronic materials research, providing an opportunity for meaningful exchanges of information between attendees of both conferences. | 06.01.2025 08:00:00 | Jan | news_2025-01-15_3.jpg | \images\news_2025-01-15_3.jpg | https://2025.deviceresearchconference.org/ | 2025.deviceresearchconference.org |
| Acquisition of 200mm Wafer Fab | Littelfuse announced it completed the acquisition ... | 12242 | Industry News | Acquisition of 200mm Wafer Fab | Littelfuse announced it completed the acquisition of the 200mm wafer fab located in Dortmund, Germany ("Dortmund fab") from Elmos Semiconductor. The completion of the Dortmund fab acquisition enhances Littelfuse long-term power semiconductor opportunities across a broad base of industrial end markets including energy storage, automation, motor drives, renewables, power supplies, and charging infrastructure.<br>"We are excited to welcome the talented and highly skilled Dortmund fab employees to the Littelfuse team," said Dave Heinzmann, President & Chief Executive Officer. "This acquisition supports Littelfuse long-term growth strategy while expanding our power semiconductor technology offering and high-quality manufacturing capabilities."<br>"The acquisition of the Dortmund fab expands our long-term organic growth opportunities for broad-based customer demand in high-growth power conversion applications across industrial end markets," said Chad Marak, Senior Vice President and General Manager, Littelfuse Semiconductor Business. "The Dortmund fab complements our current footprint while growing our highly skilled technology team and enhancing our operational capabilities." | 30.12.2024 12:00:00 | Dec | news_2025-01-15_5.jpg | \images\news_2025-01-15_5.jpg | https://investor.littelfuse.com/news/news-details/2024/Littelfuse-Completes-Acquisition-of-the-200mm-Wafer-Fab-Located-in-Dortmund-Germany/default.aspx | littelfuse.com |
| Samples of HVIGBT Modules now Shipping | Mitsubishi Electric Corporation announced that it ... | 12241 | Industry News | Samples of HVIGBT Modules now Shipping | Mitsubishi Electric Corporation announced that it will begin shipping samples of two new S1-Series High Voltage Insulated Gate Bipolar Transistor (HVIGBT) modules, both rated at 1.7kV, for large industrial equipment such as railcars and DC power transmitters. Thanks to proprietary Insulated Gate Bipolar Transistor (IGBT) devices and insulation structures, the modules offer excellent reliability and low power loss and thermal resistance, which are expected to increase the reliability and efficiency of inverters in large industrial equipment. Mitsubishi Electric's 1.7kV HVIGBT modules, first released in 1997 and highly regarded for their performance and reliability, have been widely adopted for inverters in power systems. The new S1-Series modules incorporate Mitsubishi Electric's proprietary Relaxed Field of Cathode (RFC) diode, which increases the Reverse Recovery Safe Operating Area (RRSOA) by 2.2 times compared to previous models for improved inverter reliability. In addition, the use of an IGBT element with a Carrier Stored Trench Gate Bipolar Transistor (CSTBT) structure helps reduce both power loss and thermal resistance for more efficient inverters. Furthermore, Mitsubishi Electric's proprietary insulation structure increases the insulation voltage resistance to 6.0kVrms, 1.5 times that of previous products, resulting in more flexible insulation designs for compatibility with a wide range of inverter types. | 23.12.2024 11:00:00 | Dec | news_2025-01-15_4.jpg | \images\news_2025-01-15_4.jpg | https://www.mitsubishielectric.com/news/2024/1223.html | mitsubishielectric.com |
| Enabling Semiconductor Development | Micon Global has started a strategic sales partner... | 12222 | Industry News | Enabling Semiconductor Development | Micon Global has started a strategic sales partnership with Silvaco, a provider of software solutions for semiconductor and photonics design, including TCAD, EDA software, and SIP solutions. This sales partnership is intended to "drive Silvaco's expansion across EMEA market". Silvaco specializes in developing TCAD and EDA software, as well as SIP solutions that support semiconductor design and digital twin modeling through AI tools. With its product range, Silvaco enables the development of complex semiconductor and photonics systems for diverse applications, including automotive, IoT, high-performance computing, and 5G/6G mobile networks. Micon connects technology providers with companies in the semiconductor, electronics, and software sectors. | 20.12.2024 08:00:00 | Dec | news_2025-01-01_3.jpg | \images\news_2025-01-01_3.jpg | https://investors.silvaco.com/news-releases/news-release-details/micon-global-and-silvaco-announce-new-partnership | silvaco.com |
| High Current Metal Shunt For E-Bike Power Systems | As power electronics evolve, the requirements for ... | 12236 | Product Release | High Current Metal Shunt For E-Bike Power Systems | As power electronics evolve, the requirements for high current, low resistance sensing resistors continues to increase. Emerging applications, such as electric bikes and scooters may require high power, high accuracy, and low thermal resistance. Stackpole's HCS series provides high power, precise sensing and low thermal resistance. It offers power ratings up to a 10 W rated in 5930 size with a minimum TCR of 50 ppm. A raised element improves the thermal footprint of the device and decreases PCB and terminal temperature. Resistance values starting at 0.2 mΩ enable high efficiency sensing in a surface mountable package. According to the manufacturer the all-metal construction also provides "very high pulse withstanding superior to that of film or foil on ceramic sense resistor types." | 19.12.2024 15:30:00 | Dec | news_2025-01-01_17.jpg | \images\news_2025-01-01_17.jpg | https://www.seielect.com/ | seielect.com |
| Wide-Creepage Switcher IC for 800 V Automotive Applications | Power Integrations introduced a wide-creepage pack... | 12230 | Product Release | Wide-Creepage Switcher IC for 800 V Automotive Applications | Power Integrations introduced a wide-creepage package option for its InnoSwitch3™-AQ flyback switcher IC for automotive applications. A drain-to-source-pin creepage distance of 5.1 mm eliminates the need for conformal coating, making the IC compliant to the IEC60664-1 standard in 800 V vehicles while simplifying manufacturing and increasing system reliability. The company's InSOP™-28G package enables 1000 V<sub>DC</sub> to be provided to the primary side, while keeping all other pins safely isolated in pollution degree 2 environments. The 1700 V-rated CV/CC InnoSwitch3-AQ switching power supply ICs incorporate a silicon carbide (SiC) primary switch capable of delivering up to 80 W of output power. The ICs reduce the number of components required to implement a power supply by up to 50 %. An increased drain-pin width is beneficial in withstanding high levels of shock and vibration, especially in eAxle automotive applications. These members of the InnoSwitch3-AQ family will start up with 30 V on the drain without external circuitry-which is critical for functional safety. Additional protection features include input under-voltage, output over-voltage and over-current limiting. Synchronous rectification and a multi-mode valley switching, discontinuous/continuous conduction mode (DCM/CCM) flyback controller deliver greater than 90 percent efficiency. Devices consume less than 15 mW at no-load. Target automotive applications include battery management systems, µDC/DC converters, control circuits and emergency power supplies in the main traction inverter. | 18.12.2024 09:30:00 | Dec | news_2025-01-01_11.jpg | \images\news_2025-01-01_11.jpg | https://investors.power.com/news/news-details/2024/Power-Integrations-Targets-800-V-Automotive-Applications-with-New-Wide-Creepage-Switcher-IC/default.aspx | power.com |
| Next-Generation SiC Process Platform | X-FAB Silicon Foundries has launched XSICM03, its ... | 12225 | Industry News | Next-Generation SiC Process Platform | X-FAB Silicon Foundries has launched XSICM03, its "next-generation XbloX platform, advancing Silicon Carbide process technology for power MOSFETs, delivering significantly reduced cell pitch, enabling increased die per wafer and improved on-state resistance without compromising reliability". XbloX is X-FAB's streamlined business process and technology platform, which integrates qualified SiC process development blocks and modules for planar MOSFET production, simplifying the onboarding process and significantly reducing design risks and product development time. By combining proven process modules with robust design rules, control plans, and FMEAs, XbloX is said to enable "faster prototyping, easier design evaluation, and shorter time to market". This next generation platform provides active area design cell size reduction "while maintaining robust process controls, as well as leakage and breakdown device performance". The XSICM03 platform allows customers to create SiC planar MOSFETs with a cell pitch that is over 25 % smaller than the previous generation. This allows for up to a 30 % increase in die per wafer compared to the previous generation. | 17.12.2024 11:00:00 | Dec | news_2025-01-01_6.jpg | \images\news_2025-01-01_6.jpg | https://www.xfab.com/news/details/article/x-fab-launches-next-generation-silicon-carbide-process-platform-for-power-mosfet-designs | xfab.com |
| Asymmetrical TVS Diodes for Gate Driver Protection for Automotive SiC MOSFETs | Littelfuse announced the launch of its TPSMB Asym... | 12245 | Product Release | Asymmetrical TVS Diodes for Gate Driver Protection for Automotive SiC MOSFETs | Littelfuse announced the launch of its TPSMB Asymmetrical TVS Diode Series, the first-to-market asymmetrical transient voltage suppression (TVS) diode specifically designed for the protection of Silicon Carbide (SiC) MOSFET gate drivers in automotive applications. This product addresses the increasing demand for reliable overvoltage protection in next-generation electric vehicle (EV) systems, delivering a compact, single-component solution that replaces multiple Zener diodes or TVS components traditionally used for gate driver protection. The TPSMB Asymmetrical TVS Diode Series provides superior protection for SiC MOSFET gate drivers, which are prone to overvoltage events due to faster switching speeds compared to traditional silicon-based MOSFETs or IGBTs. The asymmetrical design of the TPSMB Series supports SiC MOSFETs' differing positive and negative gate driver voltage ratings, ensuring enhanced performance in a variety of demanding automotive power applications where SiC MOSFETs are used, including Onboard chargers (OBCs), EV traction Inverters, I/O interfaces, and Vcc buses. These applications demand high-performance overvoltage protection (OVP) for SiC MOSFET gate drivers to ensure optimal performance, longevity, and efficiency. | 17.12.2024 07:30:00 | Dec | news_2025-01-15_8.jpg | \images\news_2025-01-15_8.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2024/new-tpsmb-asymmetrical-tvs-diodes-from-littelfuse-provide-superior-gate-driver-protection-for-automotive-sic-mosfets | littelfuse.com |
| Automotive-Compliant Synchronous Buck LED Driver | Diodes Incorporated (Diodes) introduced the automo... | 12237 | Product Release | Automotive-Compliant Synchronous Buck LED Driver | Diodes Incorporated (Diodes) introduced the automotive-compliant LED driver AL8891Q. This device is a synchronous Buck LED driver with high-side current sense driving up to 2 A from a 4.5 V to 65 V input voltage range. It supports up to 95% duty cycle, allowing the drive of longer LED chains. The device is intended for automotive lighting applications, including daytime running lights (DRL), fog lights, turn lights, brake/stop lights, and interior lights. Using constant-on-time (COT) control, the AL8891Q achieves control-loop compensation and cycle-by-cycle current limiting without requiring an external compensation capacitor. The device's switching frequency is adjustable from 200 kHz to 2.5 MHz, allowing it to optimize efficiency or achieve a smaller inductor size and compact form factor. It incorporates a spread spectrum frequency modulation technique to enhance EMI performance, which eases compliance with the most stringent CISPR 25 Class 5 standard. The AL8891Q has two independent pins-PWM and analog dimming. PWM dimming, from 0.1 kHz to 2 kHz, is suitable for high-resolution dimming, and analog dimming is from 0.15 V to 2 V. It features an internal soft-start function, gradually increasing the inductor and switch current to minimize potential overvoltage and overcurrent at the output. The device features several protections with fault reporting, including thermal shutdown with auto-restart, input and constant current undervoltage lockout (UVLO), cycle-by-cycle current limit, and LED-open & short circuit protection. It is available in the thermally enhanced TSSOP-16EP package with an operating temperature range of -40 °C to +125 °C. | 16.12.2024 16:30:00 | Dec | news_2025-01-01_18.jpg | \images\news_2025-01-01_18.jpg | https://www.diodes.com/about/news/press-releases/65v-2a-automotive-compliant-synchronous-buck-led-driver-from-diodes-incorporated-for-lighting-applications-with-comprehensive-protection-and-fault-reporting/ | diodes.com |
| Current Transducer for DC Charging Station Testing Device Demonstrator | A current research project at Graz University of T... | 12238 | Industry News | Current Transducer for DC Charging Station Testing Device Demonstrator | A current research project at Graz University of Technology analyses periodic verification and safety of direct current electric vehicle charging stations. As part of the ProSafE² project (Protection, Safety and Efficiency of Electric Vehicle Charging Stations) the basis for periodic verification of direct current electric vehicle charging stations (EVCS) is being researched and a test procedure for the recurring testing of DC charging stations has been developed over the past two and a half years in order to ensure their safety over the entire operating period. Findings from the project are also being incorporated into the update of the OVE guideline R 30. For this project, a DS600ID current transducer from Danisense has been integrated into the DC circuit of the 'mobile charging station testing device demonstrator,' which is connected to the DC charging station. The current transducer precisely measures the currents flowing between the charging station and the demonstrator. This is very important as the project also focuses on the energy efficiency of the EV charger. "For such an energy efficiency measurement you need to have highly accurate current measurements to reduce the impact of the error in the calculation," remarks Loic Moreau, EMEA Sales & Marketing Director at Danisense. | 16.12.2024 06:00:00 | Dec | news_2025-01-15_1.jpg | \images\news_2025-01-15_1.jpg | https://danisense.com/archive/DS600ID-2.pdf | danisense.com |
| Silicone Gap Filler for Thermal Management | With WEVOSIL 26040 FL, Wevo is expanding its portf... | 12235 | Product Release | Silicone Gap Filler for Thermal Management | With WEVOSIL 26040 FL, Wevo is expanding its portfolio of thermal interface materials (TIMs) with a specially optimised silicone gap filler. The material features a thermal conductivity of 4 W/m*K, a bond line thickness of less than 70 µm and enhanced sedimentation stability. In addition, the dosing profile has been sharpened to secure an efficient production process. It is suited for the thermal management of numerous electrical and electronic applications, from power electronics to battery technologies. With its specially developed filler combination the material also bridges small gaps. Material properties such as reactivity can be customized to individual needs. This silicone gap filler offers a temperature resistance of up to 200 °C, flame-retardant properties in accordance with UL 94 V-0 (as of a thickness of just 2 mm) and good mechanical properties, including elongation at break of more than 30 per cent. When cured, WEVOSIL 26040 FL meets the requirements of the PV 3040 test specification for low-volatile emissions in the automotive industry and is therefore suitable for a wide range of applications. | 12.12.2024 14:30:00 | Dec | news_2025-01-01_16.jpg | \images\news_2025-01-01_16.jpg | https://www.wevo-chemie.de/en/news-press/detailpage/new-silicone-gap-filler | wevo-chemie.de |
| Instrument for (Power) Designs | The DL950 is a from Yokogawa is a combination of a... | 12233 | Product Release | Instrument for (Power) Designs | The DL950 is a from Yokogawa is a combination of a mixed signal oscilloscope and portable data acquisition recorder that can be used to capture both high speed transient events and long run trends. Such a ScopeCorder offers a combination of channel count, input types, triggering, and recording to tackle the job of electromechanical systems development and troubleshooting. It accurately captures switching waveforms of inverters and fastmoving noises around the power supply by using its 200 MSamples/s isolation module. It operates with an isolated input of up to 1000 V, an ADC resolution of 14 bit and provides up to 20 s of continuous acquisition. Using 10 Gbit/s Ethernet, up to 20 MS/s of data can be stored in real time on a PC. An SFP+ module, a fiber optic cord, and the PC software IS8000 are used for data transfer. | 12.12.2024 12:30:00 | Dec | news_2025-01-01_14.jpg | \images\news_2025-01-01_14.jpg | https://tmi.yokogawa.com/eu/solutions/products/oscilloscopes/is8000-integrated-software-platform/ | tmi.yokogawa.com |
| Power Sensors for accurate Measurements up to 18 GHz | With its R&S NRPxE RF power sensors, Rohde & Schwa... | 12232 | Product Release | Power Sensors for accurate Measurements up to 18 GHz | With its R&S NRPxE RF power sensors, Rohde & Schwarz claims to set "a new standard for accurate and reliable power measurements in frequency ranges up to 18 GHz, while offering an unprecedented level of affordability". They feature a dynamic range of 80 dB, a video bandwidth of 100 kHz, and the ability to perform up to 1,000 measurements per second. With frequency ranges from 10 MHz to 8 or 18 GHz, the power sensors cater to various measurement needs. The sensors feature an IEEE-compliant label and connector color coding, for safe and secure operation. The built-in trigger capability and RGB status LED make monitoring the sensor status and trigger measurements easier. Equipped with a USBTMC interface, the R&S NRPxE sensors can be directly integrated into test systems and they also allow remote controlling via PC or mobile device. The free PowerViewer mobile app enables on-the-go measurements using an Android smartphone, e. g. for field service and maintenance applications. These power sensors replace the established NRP-Z2x1 RF power sensors. | 12.12.2024 11:30:00 | Dec | news_2025-01-01_13.jpg | \images\news_2025-01-01_13.jpg | https://www.rohde-schwarz.com/uk/about/news-press/all-news/rohde-schwarz-presents-new-essential-power-sensors-for-accurate-measurements-in-frequency-ranges-up-to-18-ghz-press-release-detailpage_229356-1534796.html | rohde-schwarz.com |
| PMICs for SoCs Adopted in Reference Designs for Cockpits | ROHM Semiconductor announced the adoption of its P... | 12231 | Product Release | PMICs for SoCs Adopted in Reference Designs for Cockpits | ROHM Semiconductor announced the adoption of its PMICs in power reference designs focused on the next-generation cockpit SoCs Dolphin3 (REF67003) and Dolphin5 (REF67005) by Telechips, a fabless semiconductor manufacturer for automotive applications headquartered in Pangyo, South Korea. Intended for use inside the cockpits of European automakers, these designs are scheduled for mass production in 2025. ROHM and Telechips have been engaged in technical exchanges since 2021, fostering a close collaborative relationship from the early stages of SoC chip design. As a first step in achieving this goal, ROHM's power supply solutions have been integrated into Telechips' power supply reference designs. These solutions support diverse model development by combining sub-PMICs and DrMOS with the main PMIC for SoCs. For infotainment applications, the Dolphin3 application processor (AP) power reference design includes the BD96801Qxx-C main PMIC for SoCs. Similarly, the Dolphin5 AP power reference design developed for next-generation digital cockpits combines the BD96805Qxx-C and BD96811Fxx-C main PMICs for SoC with the BD96806Qxx-C sub-PMIC for SoC, improving overall system efficiency and reliability. | 12.12.2024 10:30:00 | Dec | news_2025-01-01_12.jpg | \images\news_2025-01-01_12.jpg | https://www.rohm.com/reference-designs | rohm.com |
| 2300-V SiC Power Modules | The first family of 2300-V Wolfspeed WolfPack&trad... | 12229 | Product Release | 2300-V SiC Power Modules | The first family of 2300-V Wolfspeed WolfPack™ power modules from Wolfspeed was designed for 1500-V DC bus systems to maximize performance while reducing BoM, production and maintenance costs. Using a 2300-V SiC module reduces component count and system size by moving to 2-level power conversion architectures. Basically, this means a 15% greater voltage headroom with better surge and overload tolerance when compared to a 2000-V SiC design as well as a 2-3x reduction in switching losses for 1500-V DC bus application compared to other SiC solutions. The manufacturer highlights the "optimized FIT rate for 24/7 continuous 1500-V DC operation via improved cosmic ray susceptibility compared to a 2000-V design". A typical family member is the CAB5R0A23M4(T) SiC half-bridge module, which operates with an on-resistance of 5.0 mΩ. The DC continuous drain current is specified to be 150 A while the pulsed drain is specified to be 300 A. | 12.12.2024 08:30:00 | Dec | news_2025-01-01_10.jpg | \images\news_2025-01-01_10.jpg | https://www.wolfspeed.com/products/power/sic-power-modules/ | wolfspeed.com |
| ROL0 and Halogen-free Flux-cored Wire | Indium Corporation announced the global availabili... | 12251 | Product Release | ROL0 and Halogen-free Flux-cored Wire | Indium Corporation announced the global availability of CW-807RS, a halide- and halogen-free flux-cored wire that improves wetting speeds and cycle times for electronics assembly and robot soldering applications. CW-807RS is a no-clean formula designed to maximize the solderability of a halogen-free cored wire solder flux. It is an upgraded version of Indium Corporation's CW-807 formula, which has been popular with electronics assemblers and other customers for many years. This halogen-free version will provide improved wetting speeds and contains the company's industry-leading spatter control technology. CW-807RS provides benefits in manual and robotic soldering applications requiring an "L" IPC classification and halogen-free wire, as well as in manual and robotic soldering applications requiring extra wetting power to achieve higher throughput while remaining halogen-free. Additionally, the spatter control technology within the flux produces an aesthetically pleasing board post-soldering by leaving minimal spattering and a clear to light-colored residue. | 10.12.2024 13:30:00 | Dec | news_2025-01-15_14.jpg | \images\news_2025-01-15_14.jpg | https://www.indium.com/corporate/media-center/news/indium-corporation-introduces-new-ROL0-and-halogen-free-flux-cored-wire/ | indium.com |
| USB PD EPR Solution Featuring Type-C Port Controller and Buck-Boost Battery Charger | Renesas Electronics introduced the RAA489118 buck-... | 12249 | Product Release | USB PD EPR Solution Featuring Type-C Port Controller and Buck-Boost Battery Charger | Renesas Electronics introduced the RAA489118 buck-boost battery charger and the RAA489400 USB Type-C® port controller. The two ICs combine to provide a premier Extended Power Range (EPR) USB Power Delivery (PD) solution. The RAA489118 functions as either a battery charger supporting two to seven battery cells in series or as a voltage regulator supporting 30V input and 30V output. It employs Renesas' patented R3™ (Robust Ripple Regulator) technology, which combines features of fixed-frequency and hysteretic Pulse-Width Modulation (PWM) technologies. R3 modulation technology delivers acoustic noise-free operation, fast dynamic response, and light-load efficiency for longer battery life. The RAA489118 includes an SMBus (System Management Bus) interface that is widely employed in power tools, home appliances and light industrial products. The SMBus interface, combined with the buck-boost and bidirectional features, allows the RAA489118 to work seamlessly with the RAA489400 and other components in USB-C PD implementations. Its input and output voltage levels also match mainstream solar power voltage levels, making it an ideal fit for solar portable power station applications. The RAA489400 port controller supports USB-PD VBUS power up to 48V/5A. It features an integrated PHY, both Sink and Source Power Path Gate Drivers with external NFETs, short-circuit protection, VBUS discharge, a VCONN MUX and dead battery support. | 10.12.2024 11:30:00 | Dec | news_2025-01-15_12.jpg | \images\news_2025-01-15_12.jpg | https://www.renesas.com/en/about/newsroom/renesas-introduces-usb-pd-epr-solution-featuring-type-c-port-controller-and-buck-boost-battery | renesas.com |
| Solar Optimizers with GaN FETs | Efficient Power Conversion (EPC) launched the EPC9... | 12228 | Product Release | Solar Optimizers with GaN FETs | Efficient Power Conversion (EPC) launched the EPC9178, a reference design for photovoltaic (PV) optimizers. Designed to deliver high reliability while addressing critical challenges in energy efficiency and cost-effectiveness through the reduction of passive components in solar energy systems, the EPC9178 demonstrates the transformative potential of GaN technology for renewable energy solutions. This reference design employs a back-to-back buck-boost converter topology for energy harvesting for each solar panel, even under challenging conditions such as shading. This solution bridges the gap between micro-inverters and string inverters, offering enhanced energy efficiency and compatibility with existing infrastructure. The EPC9178 combines GaN technology with a dedicated controller to deliver its performance and reliability. Operating at 450 kHz minimizes the size of passive components, resulting in a lightweight and space-saving solution with 98% peak efficiency. Powered by 100 V-rated EPC2306 eGaN® FETs, the EPC9178 offers an on-resistance of 3.8 mΩ and reduced switching losses compared to silicon MOSFETs. The integrated LM5177 controller from Texas Instruments reduces design complexity and component count. It operates across an input voltage range of 30 V to 60 V, with selectable output voltages of 30 V, 45 V, and 60 V. | 10.12.2024 07:30:00 | Dec | news_2025-01-01_9.jpg | \images\news_2025-01-01_9.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3187/design-high-efficiency-solar-optimizers-with-gan-fets | epc-co.com |
| Strategic Gallium Nitride Technology Collaboration for Automotive | ROHM and TSMC have entered a strategic partnership... | 12221 | Industry News | Strategic Gallium Nitride Technology Collaboration for Automotive | ROHM and TSMC have entered a strategic partnership on development and volume production of gallium nitride power devices for electric vehicle applications. The partnership will integrate ROHM's device development technology with TSMC's GaN-on-silicon process technology. The partnership builds on ROHM and TSMC's history of collaboration in GaN power devices. In 2023, ROHM adopted TSMC's 650 V GaN high-electron mobility transistors (HEMT), whose process is increasingly being used in consumer and industrial devices as part of ROHM's EcoGaN series. | 10.12.2024 07:00:00 | Dec | news_2025-01-01_2.jpg | \images\news_2025-01-01_2.jpg | https://www.rohm.com/news-detail?news-title=2024-12-10_news&defaultGroupId=false | rohm.com |
| Sixteen MOSFETs in specific Package | Nexperia launched sixteen 80 V and 100 V power MOS... | 12218 | Product Release | Sixteen MOSFETs in specific Package | Nexperia launched sixteen 80 V and 100 V power MOSFETs in the copper-clip CCPAK1212 package for high power density. The copper-clip design provides high current conduction, reduced parasitic inductance, and excellent thermal performance. These features make the devices well-suited for motor control, power supplies, renewable energy systems, and other power-hungry applications. The range also includes application-specific MOSFETs (ASFETs) designed for AI server hot-swap functions. With top-side and bottom-side cooling options, these MOSFETs are supported by JEDEC registration. The benchmark PSMN1R0-100ASF is a 0.99 mΩ 100 V power MOSFET capable of conducting 460 A and dissipating 1.55 KW of power, yet in a CCPAK1212 package footprint that occupies 12 mm x 12 mm of board space. The PSMN1R0-100CSF offers similar statistics in a top-side cooled version. This is enabledby the internal construction of the devices. The "CC" in CCPAK1212 stands for copper clip, meaning that the power MOSFET silicon die is sandwiched between two pieces of copper, the drain tab on one side and the source clip on the other., which means that wire bonds are entirely eliminated. | 09.12.2024 14:30:00 | Dec | news_2024-12-15_16.jpg | \images\news_2024-12-15_16.jpg | https://www.nexperia.com/about/news-events/press-releases/CCPAK1212-package-pushes-the-performance-of-Nexperia-s-power-MOSFETs-to-the-next-level | nexperia.com |
| Acquisition of SiC JFET Business | onsemi announced that it has entered into an agree... | 12209 | Industry News | Acquisition of SiC JFET Business | onsemi announced that it has entered into an agreement to acquire the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, including the United Silicon Carbide subsidiary, from Qorvo. The acquisition will complement onsemi's extensive EliteSiC power portfolio and enable the company to address the need for high energy efficiency and power density in the AC-DC stage in power supply units for AI data centers. Additionally, the move will accelerate onsemi's readiness for emerging markets such as EV battery disconnects and solid-state circuit breakers (SSCBs). "As AI workloads become more complex and energy-intensive, the importance of reliable SiC JFETs that deliver high energy efficiency and are able to handle high voltages will continue to increase," said Simon Keeton, group president and general manager of the Power Solutions Group, onsemi. "With the addition of Qorvo's industry leading SiC JFET technology, our intelligent power portfolio offers our customers yet another solution to optimize energy consumption and increase power density." | 09.12.2024 12:00:00 | Dec | news_2024-12-15_7.jpg | \images\news_2024-12-15_7.jpg | https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-acquires-silicon-carbide-jfet-technology-to-enhance-its-power-portfolio-for-ai-data-centers | onsemi.com |
| Hot-Swap/E-Fuse | HMI released the HL8520E, a hot-swap/E-Fuse device... | 12217 | Product Release | Hot-Swap/E-Fuse | HMI released the HL8520E, a hot-swap/E-Fuse device designed to offer protection and power control for sensitive load circuitry. The HL8520E is designed to protect systems from input transients, shorts, and voltage spikes that could damage load circuitry, while managing power delivery to enhance reliability. With an input voltage range of 2.7 V to 16 V, it supports both low- and high-voltage systems, making it suitable for diverse applications. The device can also handle up to 20 A of output current. Featuring an integrated MOSFET with an R<sub>DS(on)</sub> of 2.8 mΩ, the HL8520E reduces conduction losses while improving power efficiency, and thermal performance. It includes several protection features, such as over-current protection (OCP), short-circuit protection (SCP), thermal shutdown (TSD), damaged MOSFET detection, over-voltage protection (OVP), and under-voltage lockout (UVLO), safeguarding both the device and the load from electrical faults. For smoother system operation, the HL8520E allows for an external adjustable soft start, enabling controlled inrush current during startup. Additionally, the device provides configurable current limits. The response time of less than 200 ns for short-circuit protection helps detecting and mitigating fault conditions. The device comes in an LGA-26 package measuring 4 mm x 4 mm. | 05.12.2024 13:30:00 | Dec | news_2024-12-15_15.jpg | \images\news_2024-12-15_15.jpg | https://hmisemi.com/hmi-introduces-16v-20a-advanced-hot-swap-e-fuse-for-robust-load-protection-and-efficient-power-management/ | hmisemi.com |
| Excellent Performance Award | Asahi Kasei received a 2024 TSMC Excellent Perform... | 12226 | Industry News | Excellent Performance Award | Asahi Kasei received a 2024 TSMC Excellent Performance Award for its Pimel™ photosensitive Polyimide material, in recognition of its "Excellent Technology Collaboration and Production Support in Advanced Packaging" at the 2024 Supply Chain Management Forum held by Taiwan Semiconductor Manufacturing. TSMC presents the Excellent Performance Award to suppliers that have made remarkable contributions to its technology leadership and manufacturing with advanced semiconductor processes over the past year. At the award ceremony, TSMC Chairman & CEO Dr. C.C. Wei thanked suppliers for delivering timely and high-quality professional services to drive continuous improvement of the supply chain and related industries. Pimel has been used for worldwide semiconductor applications such as buffer coatings, passivation layers for bumping, and dielectric layers for re-distribution bumping. With a new plant for Pimel scheduled to start operation this year, Asahi Kasei looks forward to providing swift and reliable supply of products that support advanced semiconductor manufacturing processes. | 05.12.2024 12:00:00 | Dec | news_2025-01-01_7.jpg | \images\news_2025-01-01_7.jpg | https://www.asahi-kasei.com/news/2024/e241205.html | asahi-kasei.com |
| Laboratory for Transformer Prototypes | Wurth Electronics Midcom, German Branch, with EU h... | 12224 | Industry News | Laboratory for Transformer Prototypes | Wurth Electronics Midcom, German Branch, with EU headquarters in Munich, has opened a laboratory for the production of transformer prototypes at the Hightech Innovation Center in Munich-Freiham. The company, which specializes in transformers for switch-mode power supplies and customized inductive components, is part of the Würth Elektronik eiSos Group. In Munich, they produce custom magnetics prototypes. The main purpose of the new capacities is to promote intensive and transparent collaboration with customers. In-house prototype development and production enables the design engineers to also accompany their process in its implementation. All products are tested individually. The facility's technical equipment offers opportunities for R&D projects and patent development. Students and young talents also benefit from the site's equipment for research and final theses. In the future, prototypes of high-performance products and wireless power coils will also be produced here at the Hightech Innovation Center in Munich. | 05.12.2024 10:00:00 | Dec | news_2025-01-01_5.jpg | \images\news_2025-01-01_5.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=midcom-lab | we-online.com |
| Partnership achieves over 99.6% Efficiency in GaN Inverters for Evs | VisIC Technologies and AVL announced a partnership... | 12223 | Industry News | Partnership achieves over 99.6% Efficiency in GaN Inverters for Evs | VisIC Technologies and AVL announced a partnership aimed at advancing high-efficiency GaN inverter technology for the EV market. This collaboration intends to "provide automotive OEMs with power semiconductors that exceed silicon carbide (SiC) performance, while offering lower costs at device and system level". In a recent test conducted at AVL's facilities in Germany, an inverter based on VisIC's GaN-on-Silicon D³GaN components achieved an efficiency level of 99.67 % at 10 kHz, stunningly climbing to over 99.8 % efficiency at 5 kHz - which outperforms comparable SiC inverters by up to 0.5 % and is cutting energy losses by more than 60 %. VisIC's GaN-on-Silicon power devices can be produced in widespread 200 mm and 300 mm silicon foundries, which makes scaling production a straightforward process. Looking ahead, AVL and VisIC plan to expand their GaN-on-Si platform to include 800V GaN power modules, ensuring that their technology remains scalable and adaptable to the needs of the growing BEV market. | 05.12.2024 09:00:00 | Dec | news_2025-01-01_4.jpg | \images\news_2025-01-01_4.jpg | https://visic-tech.com/visic-technologies-and-avl-forge-partnership-achieving-over-99-6-efficiency-in-gan-inverters-for-electric-vehicles/ | visic-tech.com |
| Donation to Charity instead of Christmas Gifts | Vincotech has again opted to embrace the seasonal ... | 12205 | Industry News | Donation to Charity instead of Christmas Gifts | Vincotech has again opted to embrace the seasonal spirit of charity. In lieu of sending gifts to customers, the company is presenting 12,000 Euros to its partner in philanthropy, Plan International Germany. Donated on behalf of its workforce and customers, these funds will support a development project in Ecuador. Youngsters, and girls especially, in ten communities in the Cotopaxi and Santa Elena regions stand to benefit from this initiative. It aims to impart business, digital, and soft skills that will help get them off to a better start in working life. The project also provides health services to mothers and children. This is Vincotech's second contribution to the project. The company had staged a virtual reality challenge at the PCIM Europe trade fair in May 2024 to raise funds for Plan International Germany. Fairgoers rose to the occasion. Vincotech and its partners rewarded their efforts by pledging €15,000 to upskill young Ecuadorians and furnish health services. | 05.12.2024 08:00:00 | Dec | news_2024-12-15_3.JPG | \images\news_2024-12-15_3.JPG | https://www.vincotech.com/news/company-news/article/vincotech-gives-eur12000-christmas-gift.html | vincotech.com |
| SiC Partnership between Automotive OEM and Semiconductor IDM | STMicroelectronics and Renault Group's Ampere have... | 12203 | Industry News | SiC Partnership between Automotive OEM and Semiconductor IDM | STMicroelectronics and Renault Group's Ampere have entered a multi-year agreement, effective from 2026, for the supply of Silicon Carbide (SiC) power modules. The multi-year agreement is aligned with Ampere's strategy of working upstream with its partners. The two companies have worked together on the optimization of a new power module, the key element in the powerbox. The powerbox combines three SiC-based power modules, an excitation module, which provides the necessary electrical excitation to the motor or generator for controlling the magnetic field within the motor, and a cooling baseplate designed to dissipate heat from the back side of the power module, simplifying the thermal management and cooling process. It is designed for both 400 V and 800 V battery systems, with the latter allowing rapid charging from 10% to 80% in under 15 minutes. | 03.12.2024 06:00:00 | Dec | news_2024-12-15_1.jpg | \images\news_2024-12-15_1.jpg | https://newsroom.st.com/media-center/press-item.html/c3299.html | st.com |
| Coupling Transmission Lines e. g. in PoE Systems | Würth Elektronik has expanded its WE-BAL series of... | 12219 | Product Release | Coupling Transmission Lines e. g. in PoE Systems | Würth Elektronik has expanded its WE-BAL series of baluns. The components for coupling symmetrical and asymmetrical transmission lines feature improved materials and manufacturing processes, and now cover wider frequency ranges from 673 MHz to 5900 MHz. In applications, such as antenna systems, audio and video devices, wireless communication systems, PoE systems, and measuring instruments, it is necessary to couple symmetrical and asymmetrical transmission lines in such a way that prevents signal loss. The SMT baluns with symmetrical impedance ranging from 50 to 200 Ω are integrated in 0603 and 0805 packages and operate with an insertion loss of up to a maximum of 2.0 dB. | 02.12.2024 15:30:00 | Dec | news_2024-12-15_17.jpg | \images\news_2024-12-15_17.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=we-bal | we-online.com |
| Acquisition in Current Sensor Business | Isabellenhütte Heusler has acquired Rathgeber as o... | 12207 | Industry News | Acquisition in Current Sensor Business | Isabellenhütte Heusler has acquired Rathgeber as of December 1, 2024. Both companies have a long-standing business relationship: As an external manufacturing service provider, Rathgeber was entrusted by Isabellenhütte with the punching of resistance bands, from which the ISA-WELD resistor series for current measurement is manufactured. Isabellenhütte expects to gain a strategic advantage from the acquisition. Rathgeber specializes in the production of temperature regulators for various markets. Isabellenhütte can thus supplement its product portfolio in measurement technology, expand its manufacturing expertise and strengthen its competitiveness. | 02.12.2024 10:00:00 | Dec | news_2024-12-15_5.jpg | \images\news_2024-12-15_5.jpg | https://www.isabellenhuette.de/en/news/isabellenhuette-acquires-rathgeber-gmbh | isabellenhuette.de |
| Explore the Benefits of GaN-Based Power Electronics in the latest eBook | Mouser Electronics announces an eBook in collabora... | 12239 | Industry News | Explore the Benefits of GaN-Based Power Electronics in the latest eBook | Mouser Electronics announces an eBook in collaboration with Analog Devices and Bourns exploring the challenges and benefits of Gallium Nitride (GaN) technology in the pursuit of efficiency, performance, and sustainability. <i>"10 Experts Discuss Gallium Nitride Technology"</i> explores how GaN technology, which enables higher efficiency, faster switching speeds, and greater power density than silicon, is revolutionising power electronics. The advantages of GaN technology offer far-reaching implications across various industries, from automotive and industrial applications to consumer electronics and renewable energy. The eBook provides insights from experts from ADI, Bourns, and other companies on the benefits of GaN, the challenges first-time GaN designers might face, and how to best navigate the transition from silicon to GaN. The eBook also highlights relevant products from ADI and Bourns, including GaN controllers and drivers, power inductors, and more. | 27.11.2024 07:00:00 | Nov | news_2025-01-15_2.jpg | \images\news_2025-01-15_2.jpg | https://resources.mouser.com/manufacturer-ebooks/adi-bourns-10-experts-discuss-gallium-nitride-technology-mg | mouser.com |
| Automotive-Grade SiC MOSFETs in TC3PAK Package | Inventchip Technology released four automotive-gra... | 12210 | Product Release | Automotive-Grade SiC MOSFETs in TC3PAK Package | Inventchip Technology released four automotive-grade SiC MOSFETs in the TC3PAK package: IV2Q12080K1Z, IV2Q12040K1Z, IV3Q12035K1Z and IV3Q12021K1Z. They are rated at 1200 V with resistance values of 80 mΩ, 40 mΩ, 35 mΩ and 21 mΩ respectively. The TC3PAK package, designed for topside cooling, boasts a 125 mm² metal tab surface, significantly enhancing heat dissipation capabilities. Compared to the traditional TO-263/D2PAK package, the TC3PAK's heat dissipation area is over 200 % larger, effectively halving the thermal resistance between the case and the heatsink. This design not only improves thermal management but also facilitates a more efficient heat dissipation process. Unlike TO-263/D2PAK packages that depend on PCB for heat dissipation and conduction, TC3PAK allows direct heat conduction to a heatsink via its topside metal tab. Furthermore, the TC3PAK package is 23 % thinner, measuring under 3.6 mm in height, compared to the TO-263/D2PAK, which makes it more suitable for low profile designs. Its large lead frame can support a large die, such as a 5 mm x 6 mm die, or multiple dies, providing ample space for future power upgrades without the necessity for a new package format. The TC3PAK package is engineered for surface mounting with a top-side connection to an external heatsink and facilitates the automatic assembly of the PCB-power devices-heatsink stack. | 27.11.2024 06:30:00 | Nov | news_2024-12-15_8.jpg | \images\news_2024-12-15_8.jpg | https://www.inventchip.com.cn/en/ | inventchip.com.cn |
| Linear Hall Effect IC for General Use Devices | ABLIC's S-5611A is a programmable linear Hall eff... | 12250 | Product Release | Linear Hall Effect IC for General Use Devices | ABLIC's S-5611A is a programmable linear Hall effect IC which achieves high speed response of 1.25µs as well as low noise performance of 0.09µT/√Hz, for accurate measurement of even minute current fluctuations, allowing it to contribute to improving inverter control performance. The product is also equipped with a frequency band selection function which makes it possible to select 400kHz, 200kHz, or 100kHz with just this single IC. The noise generated by the IC can be reduced even further by selecting a lower frequency. It also features a function which compensates for magnetic core characteristic changes caused by temperature, allowing for high core current sensor accuracy in a wide range of temperatures. These characteristics contribute to reduced power consumption and lower CO<sub>2</sub> emissions and make this an ideal IC for building current sensors to be equipped in environmentally friendly, highly energy efficient, high-accuracy inverters and DC-DC converters. | 26.11.2024 12:30:00 | Nov | news_2025-01-15_13.jpg | \images\news_2025-01-15_13.jpg | https://www.ablic.com/en/semicon/products/sensor/linear-hall-effect-sensor-ic/s-5611a/ | ablic.com |
| Semiconductor Company cooperates with Automotive Tier-1 Supplier | ROHM Semiconductor and Valeo announced they are co... | 12204 | Industry News | Semiconductor Company cooperates with Automotive Tier-1 Supplier | ROHM Semiconductor and Valeo announced they are collaborating to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Silicon Carbide (SiC) molded module TRCDRIVE™ pack to Valeo for future powertrain solutions. Valeo focuses on efficient, electrified mobility across various vehicle types and markets from the smallest one (ebikes), through the mainstream (passenger cars) to the largest one (eTrucks). ROHM and Valeo have been collaborating since 2022, initially focusing on technical exchanges aimed at improving the performance and efficiency of the motor inverter. By refining power electronics, both companies aim to offer optimized cost/performance by delivering higher energy efficiency, reducing heat generation thanks to an optimized cooling and mechatronic integration, and increasing overall reliability with a SiC packaging. Valeo will start supplying a first series project in early 2026. | 26.11.2024 07:00:00 | Nov | news_2024-12-15_2.jpg | \images\news_2024-12-15_2.jpg | https://www.rohm.com/news-detail?news-title=2024-11-26_news_valeo&defaultGroupId=false | rohm.com |
| High Speed & High Power DC Electronic Load | One of the features of the IT8900G/L series high p... | 12214 | Product Release | High Speed & High Power DC Electronic Load | One of the features of the IT8900G/L series high power DC electronic load from ITECH is its fast current dynamic response. Compared with its predecessor, the current rise/fall speed of this device has been increased by 3-4 times, ensuring that users are able to capture even smaller fluctuations in real time when dealing with complex load changes. Especially in scenarios that require high-speed response, such as testing server power supplies, DC/DC modules, and on-board chargers (OBCs), theIT8900G/L demonstrates its processing capabilities. The IT8906G-150-600 model can provide 0…600 A under 30 kHz dynamic band load conditions. To further optimize stability in high-frequency testing, ITECH has also introduced a low-inductance test line, which significantly reduces electromagnetic interference during rapid current changes for efficient and accurate signal transmission. The device supports load testing down to 0.075 V / 60 A and 0.75 V / 600 A with an internal resistance of 0.7 mΩ, making the IT8900G/L a test tool for fuel cells, supercapacitors, and solar cells. | 22.11.2024 10:30:00 | Nov | news_2024-12-15_12.jpg | \images\news_2024-12-15_12.jpg | https://www.itechate.com/en/news/IT8900GL%20.html | itechate.com |
| "A much better Way to conduct Heat away from the Die" – especially in GaN Applications | QPT has just filed a patent for a way to attach di... | 12206 | Industry News | "A much better Way to conduct Heat away from the Die" – especially in GaN Applications | QPT has just filed a patent for a way to attach dies to the heat spreaders or substrates which are typically Aluminium Nitride (AlN), which it calls <i>qAttach™</i>. This is said to provide "a much better way to conduct heat away from the die and also increases reliability" as the assembly process places less stress on the substrates, which is one of the biggest challenges the high-power semiconductor packaging industry faces. QPT developed this <i>qAttach</i> process for use with the Gallium Nitride (GaN) transistors that it uses in its electric motor control designs to enable them to handle the huge amounts of waste heat that results from using them for high power, high voltage applications and at high frequency. GaN transistors are now being made that are rated for high voltages but the die size is relatively small for high voltage transistors, which means there is less surface area to remove heat from. As a result, they are often down rated to enable them to function without overheating.<i>qAttach</i> solves this problem as now significantly more heat can be efficiently removed from the die so that it will not overheat. This opens up GaN to now be efficiently used for next generation, high power, high voltage applications in automotive, industrial motors and to finally deliver on the promise of low cost, high voltage GaN transistors. | 21.11.2024 09:00:00 | Nov | news_2024-12-15_4.jpg | \images\news_2024-12-15_4.jpg | https://www.q-p-t.com/press-releases/qpt-solves-major-problem-of-waste-heat-removal-in-power-electronics-with-novel-die-attach-process | q-p-t.com |
| 600 W Open Frame Power Supply for Medical and Industrial Applications | Murata Manufacturing has introduced the PQC600 ope... | 12195 | Product Release | 600 W Open Frame Power Supply for Medical and Industrial Applications | Murata Manufacturing has introduced the PQC600 open-frame AC to DC power supply, which caters to the needs of the latest medical and industrial applications, such as hospital beds, dentist chairs, medical equipment, and industrial process machinery. It offers 600 W of power within a package that is less than 1U in height and is certified to the IEC 60601-1 Edition 3 medical safety standard, which includes 2 Means of Patient Protection (MOPP) from primary to secondary, 1 MOPP from the chassis to ground and 1 MOPP from output to chassis. Additionally, the PQC600 complies with the IEC 60601-1-2 4th Edition for EMC standards, ensuring robust electromagnetic compatibility, and is suitable for use with medical devices that have Type B or Type BF applied parts. With a 600W forced-air cooling design, it achieves an efficiency of 95 % at full load. The power supply features an interleaved Power Factor Correction (PFC) and back-end synchronous rectification. Furthermore, the power supply includes a droop current sharing feature, enabling multiple units to be configured in parallel for greater power scalability. | 21.11.2024 08:30:00 | Nov | news_2024-12-01_10.jpg | \images\news_2024-12-01_10.jpg | https://www.murata.com/en-eu/news/power/ac-dc-converters/2024/1121 | murata.com |
| Chief Operating Officer started in Office | Effective November 1, 2024, Markus Fischer, the fo... | 12187 | People | Chief Operating Officer started in Office | Effective November 1, 2024, Markus Fischer, the former Executive Vice President Operations, has been appointed to the Rohde & Schwarz Executive Board. As Chief Operating Officer (COO), he will collaborate with Christian Leicher (CEO) and Andreas Pauly (CTO) to continue to keep the company on course for growth in these challenging times. As Chief Operating Officer, Markus Fischer will be responsible for most of the operative business of Rohde & Schwarz. Andreas Pauly, who joined the Executive Board as Chief Technology Officer in October 2023, will retain his primary responsibility for innovation, research and development. Managing Partner Christian Leicher will continue to head the Executive Board as President and CEO. Markus Fischer (44) joined the technology group in 2011 as Head of Corporate Material Sourcing at Munich headquarters. After another management role at Rohde & Schwarz Messgerätebau GmbH in Memmingen, he assumed overall responsibility for the group's supply chain in 2017. In July 2020, he was appointed Executive Vice President Operations, becoming a member of Corporate Management. In that role, Fischer was responsible for all Rohde & Schwarz production activities as well as the supply chain and procurement. The technology group's five production plants have a high degree of vertical integration. As Executive Vice President Operations, Fischer focused above all on improving such key aspects as efficiency, flexibility and scalability. Consequently, his division not only ensured delivery capability in times of uncertain supply chains, but also contributed substantially to the stability of Rohde & Schwarz. | 21.11.2024 07:00:00 | Nov | news_2024-12-01_2.jpg | \images\news_2024-12-01_2.jpg | https://www.rohde-schwarz.com/uk/about/news-press/all-news/new-chief-operating-officer-at-rohde-schwarz-press-release-detailpage_229356-1531917.html | rohde-schwarz.com |
| Programmable Mixed-Signal ICs, Including Low-Power Device with 14-Bit SAR ADC | Renesas announced AnalogPAK ICs, including lower p... | 12200 | Product Release | Programmable Mixed-Signal ICs, Including Low-Power Device with 14-Bit SAR ADC | Renesas announced AnalogPAK ICs, including lower power and automotive-qualified devices along with the industry’s first programmable 14-bit SAR ADC (Successive-Approximation Register Analog-Digital Converter). AnalogPAK devices are part of Renesas’ GreenPAK Family of Programmable Mixed-Signal Matrix products: NVM programmable devices integrating many system functions while minimizing component count, board space, and power consumption. GreenPAK and AnalogPAK ICs deliver functional replacement of mixed-signal standard products and stand-alone discrete circuits. They also provide hardware supervisory functions for SoCs and microcontrollers. GreenPAK and AnalogPAK devices are suited for consumer electronics, computing, white goods, industrial, communications, and automotive. Using Go Configure Software Hub and the GreenPAK Development Kit, designers can create and program a custom circuit in minutes. For example, the SLG47011 AnalogPAK device includes several D/A features including programable multichannel 14-bit SAR ADC with Programmable Gain Amplifier (PGA). The SLG47011 also has user-defined power saving modes for all macrocells that enable designers to switch off some blocks in sleep mode and therefore reduce power consumption to the µA level. The SLG47011 can be used to extend the performance of, or to offload an MCUs. It can also be used in conjunction with an MCU to replace a complex analog front-end (AFE). Key functions supported by the SLG47011 include measurement, data processing, logic control and data output. | 20.11.2024 13:30:00 | Nov | news_2024-12-01_15.jpg | \images\news_2024-12-01_15.jpg | https://www.renesas.com/en/about/newsroom/renesas-introduces-industry-s-first-complete-memory-interface-chipset-solutions-second-generation | renesas.com |
| Tool-in Ceremony for Semiconductor Fab | Samsung Electronics held a tool-in ceremony for it... | 12192 | Industry News | Tool-in Ceremony for Semiconductor Fab | Samsung Electronics held a tool-in ceremony for its semiconductor research and development complex (NRD-K) at its Giheung campus. About 100 guests, including those from suppliers and customers, were in attendance to celebrate the milestone. NRD-K broke ground in 2022 and is set to become a key research base for Samsung’s memory, system LSI and foundry semiconductor R&D. With its infrastructure, research and product-level verification will be able to take place under one roof. Samsung plans to invest about KRW 20 trillion (more than US-$ 14 billion) by 2030 for the complex in an area covering about 109,000 square meters within its Giheung campus. The complex will also include an R&D-dedicated line scheduled to begin operation in mid-2025. NRD-K will be set up with High NA extreme ultra-violet (EUV) lithography and new material deposition equipment aimed at accelerating the development of next-generation memory semiconductors such as 3D DRAM and V-NAND with more than 1,000 layers. In addition, wafer bonding infrastructure with innovative wafer-to-wafer bonding capabilities is also planned to dock. | 18.11.2024 12:00:00 | Nov | news_2024-12-01_7.jpg | \images\news_2024-12-01_7.jpg | https://news.samsung.com/global/samsung-reaches-key-milestone-at-new-semiconductor-rd-complex | samsung.com |
| Three Companies partner for Solar Inverter Designs | Mouser Electronics has partnered with onsemi and W... | 12208 | Industry News | Three Companies partner for Solar Inverter Designs | Mouser Electronics has partnered with onsemi and Würth Elektronik to address the growing solar inverter market. onsemi's Silicon Carbide (SiC) solutions address the needs for the highest levels of efficiency, reliability, and safety while their boost and inverter power integrated modules (PIMs) anchor the grid-interface electronics. Würth Elektronik's gate drivers, sensing control, and peripheral power products complete the system. E. g. the onsemi NXH40B120MNQ1 is an EliteSiC PIM containing a dual full SiC boost stage. The Würth Elektronik WE-AGDT high-power auxiliary gate drive transformers feature unipolar and bipolar outputs, making them suitable for powering state-of-the-art SiC MOSFET gate drivers up to 6W of power as well as IGBT and power MOSFETs. | 18.11.2024 11:00:00 | Nov | news_2024-12-15_6.jpg | \images\news_2024-12-15_6.jpg | https://eu.mouser.com/newsroom/publicrelations-onsemi-wurth-solar-2024final/?utm_source=publitek-media-for-pr&utm_medium=pr&utm_campaign=EMEA_PR&utm_content=2024&pid=mouser&cid=pr | mouser.com |
| A very short Look back at electronica 2024 | From November 12 to 15,2024 a total of 3,480 exhib... | 12191 | Event News | A very short Look back at electronica 2024 | From November 12 to 15,2024 a total of 3,480 exhibitors presented their innovations across the entire spectrum of electronics to about 80,000 visitors at the electronica trade fair in Munich, Germany. In addition to sustainability, key topics such as artificial intelligence, the future of mobility, and the development of young talent sparked discussions at the exhibition stands and at the supporting program. The equally successful SEMICON Europa took place concurrently in two of the 18 halls. The organizer, Messe München, is “delighted that the trade fair was once again held at the same high level as before the pandemic and that the atmosphere was very positive despite the challenging times”. In order to attend electronica show, which had its debut exactly 60 years before, 3,480 exhibitors traveled from 59 countries and regions, with 76 percent of them from abroad. There were around 80,000 visitors from around 100 countries and regions. The share of international visitors totaled 54 percent. After Germany, the top 10 visitor countries were: Italy, China, France, Austria, United Kingdom, Switzerland, USA, Spain, Netherlands and Poland.<br>Some trivia: Roland R. Ackermann, the Correspondent Editor Bavaria of Bodo’s Power Systems, had already visited the very first electronica show 60 years ago while he was delighted to greet so many friends and business friends at this year’s electronica show as well. The next electronica will take place from November 10 to 13, 2026. | 15.11.2024 11:00:00 | Nov | news_2024-12-01_6.jpg | \images\news_2024-12-01_6.jpg | https://electronica.de/en/trade-fair/journalists/press-releases/detail/final-report-electronica-2024.html | electronica.de |
| GaN Design and Development Center in Ottawa, Canada | The French company Wise-integration, which is acti... | 12190 | Industry News | GaN Design and Development Center in Ottawa, Canada | The French company Wise-integration, which is active in digital control of gallium nitride (GaN) and GaN ICs for power conversion, has opened its North American Design & Development Center in Ottawa, Ontario, Canada. Led by Christian Cojocaru and staffed by experts in analog and digital technology design, the center will drive the development of the company’s design portfolio for the next generations of WiseGan®. By maximizing the high-frequency capabilities of GaN without added power losses, the next generations of the two product lines are said to “enable significant reductions in system size and cost, while boosting overall conversion efficiency”. Since its launch in 2020, the fabless company has established more than 20 patent families for its two core product lines. WiseGan includes GaN power integrated circuits designed for high-frequency operation in the MHz range, integrating features that streamline implementation with digital control. WiseWare is a 32-bit, MCU-based AC/DC digital controller optimized for GaN-based power-supply architectures. The company recently announced the launch of a subsidiary in Hong Kong. | 15.11.2024 10:00:00 | Nov | news_2024-12-01_5.jpg | \images\news_2024-12-01_5.jpg | https://wise-integration.com/wise-integration-expands-in-north-america-with-ottawa-design-center-to-develop-next-gen-wisegan-digital-solutions/ | wise-integration.com |
| Supercaps under Development | Supercaps, also known as supercapacitors, are a sp... | 12234 | Product Release | Supercaps under Development | Supercaps, also known as supercapacitors, are a special type of energy storage device that combine certain properties of batteries with those of capacitors. In this way, they can store enormous amounts of energy and release it again very quickly, which makes them particularly valuable for many applications. While conventional capacitors store energy by separating electric charges in an electric field and are characterized by their high power density, they have a very low energy density and are therefore not suitable for long-term applications. Batteries, on the other hand, store energy through electrochemical reactions, which gives them a high energy density and therefore the ability to release energy over the long term. However, their power density is low and they are unsuitable for fast charging and discharging cycles. Supercapacitors close this gap by offering a higher energy density than normal capacitors and a higher power density than batteries, making them ideal for applications with short charge and discharge cycles. Schurter is in the process of developing standard and application-specific supercapacitor products. | 14.11.2024 13:30:00 | Nov | news_2025-01-01_15.jpg | \images\news_2025-01-01_15.jpg | https://www.schurter.com/en/news/supercaps-ultra-compact-power | schurter.com |
| DC/DC Converters for Industrial and Railway Environments | CUI announces two high-performance isolated DC/DC ... | 12216 | Product Release | DC/DC Converters for Industrial and Railway Environments | CUI announces two high-performance isolated DC/DC converters, the PRC300 and 600 series, both designed with 4.2 kV isolation to support engineers in e-mobility, railway, and industrial industries. The PRC300 series, which is UL/EN/IEC 62368-1 certified, has several special features reinforced insulation and baseplate cooling. The PRC600 series offers 600 W of power in a compact brick package and positive and negative logic options, which is well-suited for a variety of industrial and high-voltage applications. Additional features include remote ON/OFF control and output voltage trimming. The industry standard half and full brick packages both offer a high input voltage range of 180 to 400 V<sub>DC</sub> and an operating temperature ranging between -40 and +100 °C. The converters provide several protection features, including over-current, over-temperature, over-voltage, short circuit, and input under-voltage protections. In addition, they meet EN 61373 and EN 45545-2. | 13.11.2024 12:30:00 | Nov | news_2024-12-15_14.jpg | \images\news_2024-12-15_14.jpg | https://www.cui.com/news/press-releases/cui-inc.-releases-high-performance-dc-to-dc-converters-for-industrial-and-railway-environments | cui.com |
| Linear FET 2 MOSFET for Hot-Swap and Battery Protection | The safe hot-swap operation in AI servers and tele... | 12215 | Product Release | Linear FET 2 MOSFET for Hot-Swap and Battery Protection | The safe hot-swap operation in AI servers and telecom requires MOSFETs with a robust linear operating mode as well as a low R<sub>DS(on)</sub>. Infineon Technologies addresses this challenge with its OptiMOS™ 5 Linear FET 2 – a “MOSFET designed to provide the ideal trade-off between the R<sub>DS(on)</sub> of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET”. The device prevents damage to the load by limiting the high inrush current and ensures low losses during operation. Compared to the previous generation (the OptiMOS Linear FET), the OptiMOS Linear FET 2 offers improved SOA at elevated temperatures and reduced gate leakage current, as well as a wider range of packages. This allows for more MOSFETs to be connected in parallel per controller, reducing bill-of-material (BOM) costs and offering more design flexibility due to the extended product portfolio. The 100 V OptiMOS 5 Linear FET 2 is available in a TO-leadless package (TOLL) and offers a 12 times higher SOA at 54 V at 10 ms and 3.5 times higher SOA at 100 µs compared to a standard OptiMOS 5 with similar R<sub>DS(on)</sub>. The latter improvement is particularly important for the battery protection performed inside the battery management system (BMS) in case of a short circuit event. This enables high power density, efficiency, and reliability for battery protection which are used in a wide range of applications including power tools, e-bikes, e-scooters, forklifts, battery back-up units and battery-powered vehicles. | 13.11.2024 11:30:00 | Nov | news_2024-12-15_13.jpg | \images\news_2024-12-15_13.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFPSS202411-023.html | infineon.com |
| Collaboration to Advance Plug & Charge | Vector and Hubject now collaborate to further adva... | 12189 | Industry News | Collaboration to Advance Plug & Charge | Vector and Hubject now collaborate to further advance the Plug & Charge (PnC) technology. The aim is to simplify the electric vehicle (EV) charging process. With more than 2.6 million PnC-ready vehicles already on the market and more EVs on the horizon, the partnership helps to accelerate the adoption and implementation of PnC technology. Through this collaboration, automotive OEMs and charging station manufacturers can now obtain the Hubject QA (Pre-Production) and Production Certificates via the Vector Security Manager with the latest release of the development and test tool CANoe Version 18 SP3. The Vector Security Manager is the link between the Vector tools and the OEM-specific security implementations. With it, security functions can be used uniformly in the tools. Hubject QA and Production Certificates are essential for testing EVs and Electric Vehicle Supply Equipment (EVSE) using the CANoe Test Package EV or CANoe Test Package EVSE from Vector. This integration ensures that both the vehicles and the charging stations meet the ISO 15118 standard of interoperability, conformity and market readiness. PnC offers a seamless user experience. It eliminates the need for physical cards or mobile apps to authenticate and initiate charging. | 13.11.2024 09:00:00 | Nov | news_2024-12-01_4.jpg | \images\news_2024-12-01_4.jpg | https://www.vector.com/at/de/news/news/vector-and-hubject-collaborate-to-advance-plug-charge/ | vector.com |
| Cooperation for Development of Sensor ICs with Functional Safety | Novosense Microelectronics and Continental Automot... | 12186 | Industry News | Cooperation for Development of Sensor ICs with Functional Safety | Novosense Microelectronics and Continental Automotive Technologies have signed a memorandum to enhance strategic cooperation in the development of sensor ICs with functional safety, as well as for the global integration of Novosense’s products within Continental’s worldwide platforms. Products being co-developed include those for safety functions and system reliability – from airbag triggers to battery pack monitors. Novosense is a member of the AEC and an active developer for the global automotive industry. It has implemented an extensive R&D program for the sector that leverages a system-level understanding of automotive electronics, as well as a reliable product delivery supply chain. | 13.11.2024 06:00:00 | Nov | news_2024-12-01_1.jpg | \images\news_2024-12-01_1.jpg | https://www.novosns.com/en/company-news-318 | novosns.com |
| Automotive grade residual Current Monitoring Sensor | LEM has designed an automotive grade residual curr... | 12199 | Product Release | Automotive grade residual Current Monitoring Sensor | LEM has designed an automotive grade residual current monitoring (RCM) type B sensor for bi-directional OBCs with ASIL B capabilities according to ISO26262 for transformer-less on-board chargers (OBCs). This sensor, called CDT, complies with all the relevant safety standards. The RCM type B sensor enables designers to react to the new ISO5474 Part 2 standard for AC power transfer. The standard focuses on electrically propelled road vehicles and outlines the functional and safety requirements for power transfer between the vehicle and an external electric circuit using AC. Part of a series that operates in conjunction with ISO5474 Part 1, the new standard covers conductive charging requirements for modes 2 and 3 according to IEC 61851-1, reverse power transfer through on-board standard socket-outlets or EV plugs, and voltages up to 1000V AC. The CDT detects differences in current between two points, identifying such faults as short circuits and enabling rapid isolation of faulty sections to prevent damage. LEM’s CDT sensor is suited for RCM type B for bi-directional OBCs, where residual currents are detected and monitored, including AC and DC leakage currents. Using LEM’s patented fluxgate technology the CDT sensor offers a level of accuracy of ± 0.5 mA @ 5 mA. The device also provides functions on the secured Serial Peripheral Interface (SPI) bus including dynamic fault selection, monitoring of T°C, leakage value and supply monitoring, but it also provides diagnostic functions, and it is able to work equally effectively with single-phase and 3-phase AC. | 12.11.2024 12:30:00 | Nov | news_2024-12-01_14.jpg | \images\news_2024-12-01_14.jpg | https://www.lem.com/en/lem-launches-first-automotive-grade-residual-rcm-b-sensor | lem.com |
| SiC Schottky Barrier Diodes for High-Voltage xEV Systems | ROHM Semiconductor announced surface mount SiC Sch... | 12198 | Product Release | SiC Schottky Barrier Diodes for High-Voltage xEV Systems | ROHM Semiconductor announced surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models (SCS2xxxNHR; AEC-Q101 qualified) for automotive applications such as onboard chargers (OBCs), which will soon be supplemented by eight additional models (SCS2xxxN) for industrial equipment such as FA devices and PV inverters. Adopting a specific package shape, it achieves a minimum creepage distance of 5.1 mm. These products utilize an original design that removes the center pin previously located at the bottom of the package, extending the creepage distance to a minimum of 5.1 mm, approximately 1.3 times greater than standard products. This minimizes the possibility of tracking (creepage discharge) between terminals, eliminating the need for insulation treatment through resin potting when surface mounting the device on circuit boards in high-voltage applications. Additionally, the devices can be mounted on the same land pattern as standard and conventional TO-263 package products, allowing the replacement on existing circuit boards. Two voltage ratings are offered – 650 V and 1200 V – supporting 400 V systems commonly used in xEVs, as well as higher voltage systems expected to gain wider adoption in the future. | 12.11.2024 11:30:00 | Nov | news_2024-12-01_13.jpg | \images\news_2024-12-01_13.jpg | https://www.rohm.com/news-detail?news-title=2024-11-12_news_sbd&defaultGroupId=false | rohm.com |
| 120 V/4 A Half-Bridge Gate Driver for Automotive Applications | Nexperia introduced a series of high-performance g... | 12196 | Product Release | 120 V/4 A Half-Bridge Gate Driver for Automotive Applications | Nexperia introduced a series of high-performance gate driver ICs designed for driving both high-side and low-side N-channel MOSFETs in a synchronous buck or half-bridge configuration. The automotive-qualified NGD4300-Q100 is suited for electronic power steering and power converters, while the NGD4300 has been designed for use with DC/DC converters in consumer devices, servers and telecommunications equipment as well as for micro-inverters used in various industrial applications. The floating high-side driver in these ICs can operate from bus voltages up to 120 V and use a bootstrap supply with an integrated diode – features which simplify overall system design and help to reduce PCB size. They can deliver up to 4 A (peak) source and 5 A of sink current to enable short rise and fall times even for heavy loads. The gate driver has a 13 ns delay and offers a channel-to-channel delay matching of 1 ns. These delays help to minimize dead-time by maximizing switching duty-cycle. 4 ns rise and 3.5 ns (typical) fall times help to deliver higher efficiency and support high frequency and fast system control. These gate drivers accept input control signals complying with both TTL and CMOS logic levels. These ICs are fabricated using a silicon-on-insulator (SOI) process. This allows the negative voltage tolerance of the HS pin to extend to -5 V, significantly reducing the risk of damage caused by system parasitic component and unexpected spikes. The NGD4300 and NGD4300-Q100 are available in a choice of DFN-8, SO-8 and HSO-8 packages to offer engineers the flexibility to trade-off between device size and thermal performance, depending on application requirements. | 12.11.2024 09:30:00 | Nov | news_2024-12-01_11.jpg | \images\news_2024-12-01_11.jpg | https://www.nexperia.com/about/news-events/press-releases/Nexperia-s-new-120-V-4-A-half-bridge-gate-driver-raises-robustness-and-efficiency-in-automotive-applications | nexperia.com |
| Semiconductor Product Distribution Center opened in Germany | Texas Instruments has opened its product distribut... | 12188 | Industry News | Semiconductor Product Distribution Center opened in Germany | Texas Instruments has opened its product distribution center in Dreieich, Germany, close to Frankfurt, Germany. This distribution center includes 9,000 square meters of space and specific automation features. It has the capacity to quickly ship up to 7,500 orders per day. Located near Frankfurt Airport, the distribution center enables faster product delivery in Europe. The pick, pack and ship process is fully automated and orders are ready to ship within 15 minutes or less. Customers in central Germany can expect same-day product delivery, while next-day delivery is available to customers in most European countries. TI has been operating in Europe since 1956. | 12.11.2024 08:00:00 | Nov | news_2024-12-01_3.jpg | \images\news_2024-12-01_3.jpg | https://www.ti.com/about-ti/newsroom/news-releases/2024/2024-11-12-texas-instruments-accelerates-delivery-to-european-customers-with-opening-of-new-product-distribution-center-near-frankfurt--germany.html | ti.com |
| 800 V GaN Inverter with 30 kW/l Power Density | Cambridge GaN Devices (CGD) and IFP Energies nouve... | 12194 | Product Release | 800 V GaN Inverter with 30 kW/l Power Density | Cambridge GaN Devices (CGD) and IFP Energies nouvelles (IFPEN), a French public research and training organization in the fields of energy, transport and the environment, have developed a demo which confirms the suitability of CGD’s ICeGaN®650 V GaN ICs in a multi-level, 800 V<sub>DC</sub> inverter. The demo delivers a power density of 30 kW/l, which is greater than can be achieved by more expensive, state-of-the-art SiC-based devices. The inverter realization also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25 mΩ / 650 V ICeGaN ICs – 36 devices in total – in parallel. This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo features: a high voltage input of up to 800 V<sub>DC</sub>, 3-phase output, a peak current of 125 A<sub>RMS</sub> for 10 s or 180 A<sub>Peak</sub> and a continuous current of 85 A<sub>RMS</sub> continuous (120 A<sub>Peak</sub>). The improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. As GaN transistors can operate at much higher frequencies than silicon transistors, the iron losses in the motor, particularly in the case of machines with low inductances are reduced. The 3-level topology reduces EMI and enhances the reliability of the system. In terms of thermal management insulated metallized substrate boards featuring an aluminium core facilitate thermal dissipation for adequate operating temperatures, and this extends the lifespan of the system and associated GaN devices. The modular design facilitates scalability and adaptability for varying system requirements. | 12.11.2024 07:30:00 | Nov | news_2024-12-01_9.jpg | \images\news_2024-12-01_9.jpg | https://www.camgandevices.com/en/p/cgd-demos-800-vdc-multi-level-inverter-developed-using-gan-with-ifpen-that-outperforms-sic/ | camgandevices.com |
| Facilitating SiC and GaN Power Testing | The Italian company CREA (Collaudi Elettronici Aut... | 12211 | Product Release | Facilitating SiC and GaN Power Testing | The Italian company CREA (Collaudi Elettronici Automatizzati) – a subsidiary of Advantest Europe – presented its solution for a variety of power devices, including SiC and GaN power testing on wafer, single-die, substrate, PKG, and module, typically used in industrial and automotive applications. PCI (Probe Card Interface) technology, patented by CREA, is a high-volume manufacturing test solution designed to work seamlessly with the CREA MT tester family. This combination enables high-power static, dynamic, and short circuit testing for Si, SiC, and GaN bare dies, particularly in Known Good Die (KGD) applications. PCI hardware allows monitoring the power levels maintained by each probe card needle in real-time, allowing test engineers to predict potential Device Under Test (DUT) failures during the test phase. Whenever a device failure is predicted, the PCI can react immediately (within 300 ns) by shutting off the probe card's power supply, safeguarding the equipment hardware (probe card, instruments) and the DUT. The system supports voltages up to 10 kV with a current capability up to 15 kA. | 12.11.2024 07:30:00 | Nov | news_2024-12-15_9.jpg | \images\news_2024-12-15_9.jpg | https://www.crea-test.com/ | crea-test.com |
| Efficient DC/DC Converters for Industrial, Railway and Challenging Environments | With its HAE300W series P-DUKE increases the outpu... | 12227 | Product Release | Efficient DC/DC Converters for Industrial, Railway and Challenging Environments | With its HAE300W series P-DUKE increases the output power capacity of its compact half-brick design DC/DC converter portfolio to up to 300 W. This series is engineered to fulfill the stringent requirements of industrial and railway (rolling stock) applications. Featuring a 4:1 input voltage range that spans 9 to 36, 18 to 75, and 40 to 160 V<sub>DC</sub>, the HAE300W series is suited for various power systems across different regions. It offers a selection of output voltage options, including 5, 12, 15, 24, 28, 48, and 54 V<sub>DC</sub>, with an adjustable output range of +10% to -20% using an external resistor. Equipped with several protective features, the HAE300W series takes care of system safety with over-current protection (hiccup mode), output over-voltage protection (hiccup mode), continuous and auto-recovery output short-circuit protection, input under-voltage lockout, output remote sensing, and remote control capabilities. It is certified to comply with industry standards such as IEC/EN/UL62368-1, EN 50155 and EN 45545. The HAE300W series meets MIL-STD 810F and EN 61373 standards for vibration and mechanical shock, and is operable at altitudes up to 5000 m. | 12.11.2024 06:30:00 | Nov | news_2025-01-01_8.jpg | \images\news_2025-01-01_8.jpg | https://www.pduke.com/news_detail28_173.htm | pduke.com |
| IGBTs in several different Packages for up to 1700 V | Microchip Technology now offers its IGBT 7 devices... | 12193 | Product Release | IGBTs in several different Packages for up to 1700 V | Microchip Technology now offers its IGBT 7 devices in different packages, multiple topologies, as well as current and voltage ranges. The components are available in standard D3 and D4 62 mm packages, as well as SP6C, SP1F and SP6LI packages; they are intended for power applications in solar inverters, hydrogen ecosystems, commercial and agricultural vehicles and More Electric Aircraft (MEA). Many configurations are available in the following topologies: three-level Neutral-Point Clamped (NPC), three-phase bridge, boost chopper, buck chopper, dual-common source, full-bridge, phase leg, single switch and T-type. Devices can be provided with voltages ranging from 1200 V to 1700 V while currents range from 50 A to 900 A. Claimed to operate with a “lower on-state IGBT voltage (V<sub>ce</sub>), improved antiparallel diode (lower V<sub>f</sub>) and increased current capability” these components can enable lower power losses. | 12.11.2024 06:30:00 | Nov | news_2024-12-01_8.jpg | \images\news_2024-12-01_8.jpg | https://www.microchip.com/en-us/about/news-releases/products/introducing-a-wide-portfolio-of-igbt-7-power-devices-optimized | microchip.com |
| 1200 V SiC MOSFETs in Bare Die Format | Toshiba has developed the X5M007E120, a 1200 V SiC... | 12201 | Product Release | 1200 V SiC MOSFETs in Bare Die Format | Toshiba has developed the X5M007E120, a 1200 V SiC MOSFETs with an low on-resistance of 7.2 mΩ, which is particularly suited to applications within automotive traction inverters. The device has a V<sub>DSS</sub> of 1200 V and is rated for a drain current (I<sub>D</sub>) of 229 A continuously, with 458 A for pulsed operation (I<sub>D Pulse</sub>). These AEC-Q100 qualified devices can operate with channel temperatures (T<sub>ch</sub>) up to 175 °C. Engineering samples are expected to ship during 2025, with mass production samples scheduled to start in 2026. | 12.11.2024 00:00:00 | Nov | news_2024-12-01_16.jpg | \images\news_2024-12-01_16.jpg | https://toshiba.semicon-storage.com/eu/company/news/2024/11/sic-power-devices-20241112-1.html | toshiba.semicon-storage.com |
| Analog and Mixed-Signal Platform | onsemi introduced the Treo Platform, an analog and... | 12185 | Product Release | Analog and Mixed-Signal Platform | onsemi introduced the Treo Platform, an analog and mixed-signal platform built with Bipolar-CMOS-DMOS (BCD) process technology on an 65 nm node. This platform provides the foundation for a range of power and sensing solutions from the manufacturer including high-performance and low-power sensing, high-efficiency power management, and purpose-built communications devices. Using this single, scalable solution, users can accelerate product development for existing applications, and respond to emerging market opportunities. The Treo Platform features a modular, SoC-like architecture with a set of ever-evolving IP building blocks that make up the compute, power management, sensing, and communications subsystems. It offers digital processing capabilities and "better analog IP performance". With these capabilities, the platform can deliver local intelligence and compute for flexible configuration, as well as improve performance and accuracy in end applications. Additionally, the platform supports "the industry's widest voltage range of 1-90 V and operating temperatures up to 175 ° C", which allows engineers to integrate a range of low-to-high power functionality. Initial product families built on the Treo Platform are sampling now, including voltage translators, ultra-low-power AFEs, LDOs, ultrasonic sensors, multi-phase controllers, and single-pair Ethernet controllers. Through 2025, the semiconductor manufacturer will deliver new family members including: high performance sensors, DC/DC converters, automotive LED drivers, electrical safety ICs, connectivity, and more. | 11.11.2024 15:30:00 | Nov | news_2024-11-15_20.jpg | \images\news_2024-11-15_20.jpg | https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-introduces-the-industry-s-most-advanced-analog-and-mixed-signal-platform | onsemi.com |
| CGD and Qorvo collaborate on Motor Control Solutions | Cambridge GaN Devices (CGD) and Qorvo® have pa... | 12220 | Industry News | CGD and Qorvo collaborate on Motor Control Solutions | Cambridge GaN Devices (CGD) and Qorvo® have partnered "to bring together industry-leading motor control and power efficiency technologies" in the PAC5556A + ICeGaN® evaluation kit (EVK). This collaboration combines Qorvo's BLDC/PMSM motor controller/driver and CGD's ICeGaN ICs in a board that is claimed to "significantly improve motor control applications". By employing CGD's latest-generation P2 ICs, the PAC5556AEVK2 evaluation kit with 240 mΩ ICeGaN achieves up to 400 W peak performance without a heatsink, whilst the PAC5556AEVK3 with 55 mΩ ICeGaN hits 800 W peak with minimal airflow cooling. ICeGaN integrates essential current sense and Miller clamp elements. The PAC5556A + CGD GaN EVKs is said to "offer higher torque at low speeds and precise control", making them well-suited for white goods, ceiling fans, refrigerators, compressors and pumps. Target markets include industrial and home automation, especially where compact, high-efficiency motor control systems are required. | 11.11.2024 06:00:00 | Nov | news_2025-01-01_1.jpg | \images\news_2025-01-01_1.jpg | https://www.camgandevices.com/en/p/cgd-and-qorvo-set-to-revolutionize-motor-control-solutions/ | camgandevices.com |
| Motor Suite for simplified Motor Control Development | Infineon Technologies launched its Motor Suite dub... | 12197 | Product Release | Motor Suite for simplified Motor Control Development | Infineon Technologies launched its Motor Suite dubbed ModusToolbox™, which is a solution of software, tools and resources for developing, configuring and monitoring motor control applications. With its ability to support different motor types, the solution intends to enable developers to bring high-performance motor control applications to market quickly and efficiently. The suite supports industrial, robotics, and consumer applications such as home appliances, HVAC, drones, and light electric vehicles. The suite streamlines development and testing, providing real-time parameter monitoring for relevant insights into motor performance, efficiency, and reliability. This enables engineers to identify issues, optimize designs, and enhance overall functionality. It also offers signal analysis, and customized status monitoring. ModusToolbox Motor Suite features automatic detection and recognition of supported boards and kits, real-time visualization and monitoring of motor control related signals. It also provides pre-configured algorithms and real-time monitoring of critical system parameters. Additionally, the solution offers algorithms to increase the control robustness across many motor types and applications. It currently includes out-of-the-box support for Infineon’s XMC7000 microcontrollers and will further expand its capability to include industrial MCUs, with PSOC™ Control integration confirmed for upcoming releases. It provides a graphical user interface for motor control development and an adaptable, hardware-abstracted motor control core library. | 08.11.2024 10:30:00 | Nov | news_2024-12-01_12.jpg | \images\news_2024-12-01_12.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFCSS202411-022.html | infineon.com |
| PLECS Conference 2025 | Join the next PLECS Conference about Embedded Code... | 12166 | Event News | PLECS Conference 2025 | Join the next PLECS Conference about Embedded Code Generation. The speakers are engineers from industry, research, and academia who will present current applications in this field. Engage with experts and network with over 100 participants in the discussion and networking area. Besides that, take the opportunity to exchange ideas with Plexim developers. The conference language will be English. Note that this is an on-site only event. The participation fee will be 700.00 Euros or Swiss Francs (incl. 8.1% VAT) and can be paid by invoice or credit card. The Plexim staff is excited to welcome you again in Zurich, on March 4 and 5, 2025! | 08.11.2024 06:00:00 | Nov | news_2024-11-15_1.png | \images\news_2024-11-15_1.png | https://www.plexim.com/events/seminars/2325 | plexim.com |
| Galvanically isolated Gate Drivers provide Protection for IGBTs and SiC MOSFETs | STMicroelectronics' STGAP3S family of gate drivers... | 12184 | Product Release | Galvanically isolated Gate Drivers provide Protection for IGBTs and SiC MOSFETs | STMicroelectronics' STGAP3S family of gate drivers for silicon-carbide and IGBT power switches provide a reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, withstanding 9.6 kV transient isolation voltage (VIOTM) with 200 V/ns common-mode transient immunity (CMTI). Suited for motor drives for industrial applications such as air conditioning, factory automation, and home appliances the drivers are also used in power and energy applications including charging stations, energy storage systems, power-factor correction (PFC), DC/DC converters and solar inverters. The STGAP3S product family includes different options with 10 A and 6 A current capability, each of them available with differentiated Under Voltage Lock-Out (UVLO) and desaturation intervention thresholds. This helps designers select the best device to match the performance of their chosen SiC MOSFET or IGBT power switches. The Desaturation protection implements an overload and short-circuit protection for the external power switch providing the possibility to adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive overvoltage spikes. The undervoltage-lockout protection prevents turn-on with insufficient drive voltage. The driver's integrated Miller Clamp architecture provides a pre-driver for an external N-channel MOSFET. The available device variants allow a choice of 10 A sink/source and 6 A sink/source drive-current capability with desaturation-detection and UVLO thresholds optimized for IGBT or SiC technology. The fault conditions of desaturation, UVLO and overtemperature protection are notified with two dedicated open drain diagnostic pins. | 07.11.2024 14:30:00 | Nov | news_2024-11-15_19.jpg | \images\news_2024-11-15_19.jpg | https://newsroom.st.com/media-center/press-item.html/n4656.html | st.com |
| 1200 V IGBTs for Automotive and Industrial Applications | ROHM has developed automotive-grade AEC-Q101 quali... | 12183 | Product Release | 1200 V IGBTs for Automotive and Industrial Applications | ROHM has developed automotive-grade AEC-Q101 qualified 4<sup>th</sup> Generation 1200V IGBTs for vehicle electric compressors and HV heaters as well as industrial inverters. The current lineup includes four models - RGA80TRX2HR / RGA80TRX2EHR / RGA80TSX2HR / RGA80TSX2EHR - in two discrete package types (TO-247-4L and TO-247N), along with 11 bare chip variants - SG84xxWN - with plans to further expand the lineup in the future. In case of a short circuit these devices provide a withstand time of 10 µs (T<sub>j</sub>=25 °C) together with low switching and conduction losses while maintaining a withstand voltage of 1200 V. Its TO-247-4L package features 4 terminals, can accommodate an effective voltage of 1100 V in a 'Pollution Degree 2 environment' by ensuring adequate creepage distance between pins. High-speed switching is achieved by including a Kelvin emitter terminal, resulting in even lower losses. In fact, when comparing the efficiency of the new TO-247-4L packages with conventional and standard products in a 3-phase inverter, loss is reduced by about 24% compared to standard products and by 35% over conventional products. | 07.11.2024 13:30:00 | Nov | news_2024-11-15_18.jpg | \images\news_2024-11-15_18.jpg | https://www.rohm.com/news-detail?news-title=2024-11-07_news_igbt&defaultGroupId=false | rohm.com |
| New Sales Office and Service Center in Sydney, Australia | Magna-Power Electronics has opened Magna-Power Ele... | 12170 | Industry News | New Sales Office and Service Center in Sydney, Australia | Magna-Power Electronics has opened Magna-Power Electronics ANZ in Sydney, Australia. The establishment of the Sydney office enhances Magna-Power's local presence, providing dedicated support for existing and prospective customers in the region. With a product line ranging from 1.25 kW to over 10 MW and more than 400,000 product configurations, the company's solutions are well-suited to meet the varied power requirements of key Australian applications, including electrolyzers, defence, mining, water treatment, industrial power electronics, transportation, among many others. Leading the new office are industry veterans David Champion and Brian Chapman, who bring over 60 years of combined experience in electrical engineering and technology. The investment in the Sydney office is said to underscore the company's commitment to providing regional services to a wider customer base in the growing APAC market. | 07.11.2024 10:00:00 | Nov | news_2024-11-15_5.jpg | \images\news_2024-11-15_5.jpg | https://magna-power.com/company/news/2024-11-07-magna-power-sales-office-and-service-center-in-sydney-australia | magna-power.com |
| 100 V Automotive-Grade Devices for Automotive LiDAR | Innoscience has added two 100 V automotive-grade G... | 12178 | Product Release | 100 V Automotive-Grade Devices for Automotive LiDAR | Innoscience has added two 100 V automotive-grade GaN devices. The company's INN100W135A-Q (R<sub>DS(on),max</sub> = 13.5 mΩ) and smaller package INN100W800A-Q (R<sub>DS(on),max = 80</sub> mΩ) are both certified to AEC-Q101 and optimized for LiDAR as well as for high power density DC/DC converters, and Class D audio applications in the automotive sector. The INN100W135A-Q and the ultra-compact INN100W800A-Q, with a WLCSP package measuring 2.13 mm x 1.63 mm and 0.9 mm x 0.9 mm respectively, offer advantages in terms of size and power efficiency. Both devices are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. Parameters like Q<sub>g</sub> and Q<sub>oss</sub> are also improved by 1.5 to 3 times over their silicon counterparts. This results in medium to long-range recognition capabilities of 200/300m. | 07.11.2024 08:30:00 | Nov | news_2024-11-15_13.jpg | \images\news_2024-11-15_13.jpg | https://www.innoscience.com/site/details/966?el=mdnav | innoscience.com |
| 60-V Variant of Power MicroModule Series | There's another generation of MagI³C-VDMM pow... | 12182 | Product Release | 60-V Variant of Power MicroModule Series | There's another generation of MagI³C-VDMM power modules from Würth Elektronik: The input voltage range gives the new MicroModule a resistance to voltage transients on the 48 V bus. The adjustable output voltage ranges from 0.85 to 6 V with currents up to 0.3 A. The extended input voltage range of the Variable Step Down MicroModule from 3.5 to 60 V now covers bus voltages from 5 to 48 V, opening up applications from Point of Load (PoL) to direct 48 V bus voltage connection. So the MagI³C-VDMM series is suited as a replacement for linear regulators, for example in the power supply of interfaces, sensors, microcontrollers, microprocessors, DSPs and FPGAs. Operational areas include industrial, testing and measurement technology, medical devices and point-of-load DC/DC applications. Its efficiency of up to 86 percent supports "cool design", allowing its use in a temperature range from -40 to +105 °C. To save energy, the power module can be set to sleep mode using an additional pin, and the quiescent current is up to 3 µA. The integrated sync feature allows multiple Micromodules to synchronize to an external frequency while simultaneously meeting the requirements of EMC standard EN55032/CISPR32 Class B for radiated and conducted interference with verified filter combinations. The selectively controllable "spread spectrum" feature improves the EMC behavior. | 06.11.2024 12:30:00 | Nov | news_2024-11-15_17.jpg | \images\news_2024-11-15_17.jpg | https://www.we-online.com/en/components/products/MAGIC-VDMM | we-online.com |
| Strategic Partnership for Onboard Chargers and more | Nexperia has entered into a strategic partnership ... | 12174 | Industry News | Strategic Partnership for Onboard Chargers and more | Nexperia has entered into a strategic partnership with Kostal, which will enable it to produce wide bandgap devices that more closely match the exacting requirements of automotive applications. Under the terms of this partnership, Nexperia will supply, develop, and manufacture WBG power electronics devices which will be designed-in and validated by Kostal. The collaboration will initially focus on the development of SiC MOSFETs in topside cooled QDPAK packaging for onboard chargers in electric vehicles. "Nexperia has been a trusted supplier of silicon components to KOSTAL for many years and is delighted to enter into this strategic partnership that will now extend to wide bandgap devices", according to Katrin Feurle, Senior Director and Head of SiC Discretes & Modules. "KOSTAL will assist in validating our devices in its charging applications, thereby providing us with the type of invaluable 'real-world' data that will allow us to further enhance their performance". | 05.11.2024 14:00:00 | Nov | news_2024-11-15_9.jpg | \images\news_2024-11-15_9.jpg | https://www.nexperia.com/about/news-events/press-releases/Nexperia-and-KOSTAL-form-a-strategic-partnership-based-on-advancing-automotive-grade-wide-bandgap-devices | nexperia.com |
| Automotive-Grade High-Side Switches for BCMs and ZCUs | Novosense has announced a range of high-side switc... | 12180 | Product Release | Automotive-Grade High-Side Switches for BCMs and ZCUs | Novosense has announced a range of high-side switches for driving traditional resistive, inductive, and halogen lamp loads in automotive body control modules (BCM) as well as large capacitive loads commonly found in the first-level and second-level power distribution within zone control units (ZCU). At time of launch, the NSE34 and NSE35 families includes 26 single-, dual- and quad-channel devices developed for operation across 11 separate load currents intervals (11 A to sub-2 A). These devices have an R<sub>ds(on)</sub> resistance range from 8 mΩ to 140 mΩ and feature diagnostic and protection functions such as over-current protection and over-voltage clamping protection. All devices in the two families are fully compliant with multiple automotive standards, including AEC-Q100, AEC-Q100-006, AEC-Q100-012 Grade A, ISO7637, ISO16570 and CISPR25-2021 Class 5. | 05.11.2024 10:30:00 | Nov | news_2024-11-15_15.jpg | \images\news_2024-11-15_15.jpg | https://www.novosns.com/en/company-news-316 | novosns.com |
| 8.5 kW AI Data Center Power Supply Powered by GaN and SiC | Navitas Semiconductor has announced "the world's f... | 12212 | Product Release | 8.5 kW AI Data Center Power Supply Powered by GaN and SiC | Navitas Semiconductor has announced "the world's first 8.5 kW power supply unit (PSU), powered by GaN and SiC technologies to achieve 98% efficiency", which is specifically intended for applications in next-generation AI and hyperscale data centers. The AI-optimized 54 V output PSU complies with Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications and utilizes high-power GaNSafe™ and Gen-3 Fast SiC™ MOSFETs configured in 3-phase interleaved PFC and LLC topologies. The PSU's shift to a 3-phase topology for both the PFC and LLC (vs. 2-phase topologies used by competing PSUs) enables "the industry's lowest ripple current and EMI". Furthermore, the PSU is claimed to reduce the number of GaN and SiC devices by 25 % compared with the nearest competing system, which reduces the overall cost. The PSU has an input voltage range of 180 to 264 V<sub>AC</sub>, a standby output voltage of 12 V, and an operating temperature range of -5 oC to 45 oC. Its hold-up time at 8.5 kW is 10 ms, with 20 ms possible through an extender. | 05.11.2024 08:30:00 | Nov | news_2024-12-15_10v2.jpg | \images\news_2024-12-15_10v2.jpg | https://navitassemi.com/navitas-presents-worlds-first-8-5kw-ai-data-center-power-supply-powered-by-gan-and-sic/ | navitassemi.com |
| 1700 V GaN Switcher IC replaces 3 SiC Transistors | Power Integrations introduced a new member of its ... | 12181 | Product Release | 1700 V GaN Switcher IC replaces 3 SiC Transistors | Power Integrations introduced a new member of its InnoMux™-2 family of single-stage, independently regulated multi-output offline power supply ICs. According to the company the device features "the industry's first 1700 V gallium nitride switch, fabricated using the company's proprietary PowiGaN™ technology". The 1700 V InnoMux-2 IC supports 1000 VDC nominal input voltage in a flyback configuration and achieves over 90 % efficiency in applications requiring one, two or three supply voltages. Each output is regulated within one percent accuracy, eliminating post regulators. The GaN device replaces SiC transistors in power supply applications such as automotive chargers, solar inverters, three-phase meters and a wide variety of industrial power systems. Radu Barsan, vice president of technology at Power Integrations, said, "Our rapid pace of GaN development has delivered three world-first voltage ratings in a span of less than two years: 900 V, 1250 V and now 1700 V. Our new InnoMux-2 ICs combine 1700 V GaN and three other recent innovations: independent, accurate, multi-output regulation; FluxLink™, our secondary-side regulation (SSR) digital isolation communications technology; and zero voltage switching (ZVS) without an active-clamp, which all but eliminates switching losses." | 04.11.2024 11:30:00 | Nov | news_2024-11-15_16.jpg | \images\news_2024-11-15_16.jpg | https://investors.power.com/news/news-details/2024/CORRECTING-and-REPLACING-Power-Integrations-Launches-1700-V-GaN-Switcher-IC-Setting-New-Benchmark-for-Gallium-Nitride-Technology/default.aspx | power.com |
| Oscilloscope and Generator Lines | Rigol Technologies introduced its DG5000 Pro Serie... | 12179 | Product Release | Oscilloscope and Generator Lines | Rigol Technologies introduced its DG5000 Pro Series Generators and DHO/MHO5000 Series Oscilloscopes. The DHO/MHO5000 Series brings more oscilloscope performance, while the DG5000 Pro generators are arbitrary waveform generators with higher figures of merit. Combining 12-bit resolution with up to 1 GHz bandwidth and 500 Mpts record length, up to 8 channels and mixed-signal configurations, the DHO/MHO5000 Series High-Resolution Oscilloscopes are available with configurations offering 4 or 8 analog input channels and either 500 MHz or 1 GHz bandwidth. These instruments deliver 4 GSamples/s maximum real-time sampling, with the 4-channel units providing that rate across all channels. For mixed-signal measurement applications, the MHO5000 Series models combine 4 or 6 analog input channels with 16 digital channels and similar bandwidth choices as the DHO5000 models. For additional utility, an integrated function generator is an available option for the 4-channel MHO5000 models. Offering 16-bit vertical resolution, up to 500 MHz maximum output frequency, 2.5 GSamples/s maximum sample rate and a 0.8 ns (800 ps) square wave rise time, the DG5000 Pro provides high-frequency waveforms and generates complex sequence generations. The DG5000 Pro Series delivers a maximum arbitrary waveform length of 128 Mpts/channel while supporting multi-pulse output, a variety of analog and digital modulation types, and IQ digital modulation. Sequence Mode is an option and enables the playback of intricate pattern segments, with looping of up to 512 cycles. Sequence Mode also enables complex functions like repeat, wait, event, and jump. | 04.11.2024 09:30:00 | Nov | news_2024-11-15_14.jpg | \images\news_2024-11-15_14.jpg | https://eu.rigol.com/ | rigol.com |
| Next Generation of GaN Power Discretes | Infineon Technologies launched a family of high-vo... | 12177 | Product Release | Next Generation of GaN Power Discretes | Infineon Technologies launched a family of high-voltage discretes, the CoolGaN™ Transistors 650 V G5. Target applications for this new product family range from consumer and industrial switched-mode power supplies (SMPS) such as USB-C adapters and chargers, lighting, TV, data center and telecom rectifiers to renewable energy and motor drives in home appliances. The latest CoolGaN generation is designed as a drop-in replacement for the CoolGaN Transistors 600 V G1, however, with improved figures of merit. Compared to key competitors and previous product families from Infineon, the CoolGaN Transistors 650 V G5 offer up to 50 percent lower energy stored in the output capacitance (E <sub>oss</sub>), up to 60 percent improved drain-source charge (Q <sub>oss</sub>) and up to 60 percent lower gate charge (Q <sub>g</sub>) improving both hard- and soft-switching applications. This leads to a significant reduction in power loss compared to traditional silicon technology, ranging from 20 to 60 percent depending on the specific use case. The members of the high-voltage transistor product family offer a wide range of R <sub>DS(on)</sub> package combinations. Ten R <sub>DS(on)</sub> classes are available in various SMD packages, such as ThinPAK 5x6, DFN 8x8, TOLL and TOLT. In the future, CoolGaN will transition to 12-inch production. | 04.11.2024 07:30:00 | Nov | news_2024-11-15_12.jpg | \images\news_2024-11-15_12.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFPSS202411-017.html | infineon.com |
| 8-Channel Driver and Photo Receiver Amplifier IC | Apex Microtechnology announced two devices in thei... | 12176 | Product Release | 8-Channel Driver and Photo Receiver Amplifier IC | Apex Microtechnology announced two devices in their Precision IC product line: an 8-channel driver and a photo receiver amplifier IC. The devices provide supply voltages of up to 350 V and feature multi-channel architectures. Typical applications are e. g. piezoelectric transduction, capacitive actuation and LED drivers. The AIC1513 is a rigid general purpose high voltage driver IC with 8 high voltage push-pull outputs to drive capacitive and resistive loads such as piezoelectric transducers, electroluminescent devices and micro-mechanical actuators. The maximum operating voltage is 300V, and each output can handle currents up to 40 mA. The device has been designed for harsh industrial applications. The AIC1638 is an integrated receiver amplifier designed for high-sensitivity photo diodes used in applications like light barriers, smoke detectors, light curtains etc. Filtering out ambient light and amplifying the detected pulses from a photo diode, the conditioned signals are used for driving a current mirror output stage. Implementing an integrated polarity protection, the device can be used in a multiplexed configuration, simplifying the wiring of the application. It is suited for light sensing applications ranging from a few millimeters to several meters. | 31.10.2024 06:30:00 | Oct | news_2024-11-15_11.jpg | \images\news_2024-11-15_11.jpg | https://www.apexanalog.com/press/product-news-aic1513-aic1638.html | apexanalog.com |
| The next Generation of HIL Compatible Digital Twin | ABB has partnered with Typhoon HIL to create the D... | 12167 | Industry News | The next Generation of HIL Compatible Digital Twin | ABB has partnered with Typhoon HIL to create the DriveLab ACS880 HIL compatible digital twin. This collaboration is intended to bring a realistic, scalable, and easy to use real-time simulation platform to a wide range of industrial applications. DriveLab ACS880 is the next generation of Hardware-in-the-Loop (HIL) simulation technology. It is specifically tailored and geared towards simplifying the integration of ABB variable speed drives (VSD) systems. It will enable users to test and validate the system via a test automation capability which is a key component of top-tier customer support. HIL simulation is used to validate both component and system-level behavior of the drives and drive systems in real-world applications ranging from compressors, conveyers, and cranes to large scale energy storage, microgrids and more. The DriveLab ACS880 serves as a digital twin, integrating the control hardware, firmware, and software of the ACS880 drives with Typhoon HIL's high-fidelity digital models. These digital models virtually represent the ACS880 drive's hardware, including its connected components, such as the grid, motors, filters, batteries, protection devices, and the electro-mechanical elements. | 30.10.2024 07:00:00 | Oct | news_2024-11-15_2.png | \images\news_2024-11-15_2.png | https://new.abb.com/news/detail/120505/abb-and-typhoon-hil-create-drivelab-acs880-the-next-generation-of-hil-compatible-digital-twin | abb.com |
| The World's thinnest Silicon Power Wafer | Infineon Technologies has reached a breakthrough i... | 12175 | Industry News | The World's thinnest Silicon Power Wafer | Infineon Technologies has reached a breakthrough in handling and processing the thinnest silicon power wafers ever manufactured, with a thickness of only 20 µm and a diameter of 300 mm, in a high-scale semiconductor fab. The ultra-thin silicon wafers are only a quarter as thick as a human hair and half as thick as current state-of-the-art wafers of 40-60 µm. According to Infineon this will "significantly help increase energy efficiency, power density and reliability in power conversion solutions for applications in AI data centers as well as consumer, motor control and computing applications". Halving the thickness of a wafer reduces the wafer's substrate resistance by 50 percent, reducing power loss by more than 15 percent in power systems, compared to solutions based on conventional silicon wafers. For high-end AI server applications, where growing energy demand is driven by higher current levels, this is particularly important in power conversion: Here voltages have to be reduced from 230 V to a processor voltage below 1.8 V. The ultra-thin wafer technology boosts the vertical power delivery design, which is based on vertical Trench MOSFET technology and allows a very close connection to the AI chip processor, thus reducing power loss and enhancing overall efficiency. This was achieved by applying a unique wafer grinding approach, since the metal stack that holds the chip on the wafer is thicker than 20 µm. The technology has been qualified and applied in Infineon's Integrated Smart Power Stages (DC/DC converter) which have already been delivered to first customers. | 29.10.2024 15:00:00 | Oct | news_2024-11-15_10.jpg | \images\news_2024-11-15_10.jpg | https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFXX202410-013.html | infineon.com |
| Strategic Technology Partnership with McLaren Formula E Team | TDK Corporation and McLaren Racing have started a ... | 12173 | Industry News | Strategic Technology Partnership with McLaren Formula E Team | TDK Corporation and McLaren Racing have started a strategic multi-year, technology partnership to combine their technological expertise and build a high-performance future through the cutting-edge electric vehicle (EV) motorsport platform of Formula E, and ever-growing esports field. TDK has formed a partnership with the NEOM McLaren Formula E Team and McLaren Shadow F1 Sim Racing Team. As a technology partner, TDK are using motorsport and racing as a testbed to advance technologies that could help shape the future of EV, gaming and beyond. According to the companies involved, "Formula E serves as a testbed for cutting-edge EV technology that has the potential to influence the future general EV market". TDK aims to extend this technology collaboration approach with McLaren to the gaming field as well. | 29.10.2024 13:00:00 | Oct | news_2024-11-15_8.png | \images\news_2024-11-15_8.png | https://www.tdk.com/en/news_center/press/20241029_01.html | tdk.com |
| Early Bird Registration Now Open for the 40th Annual APEC 2025 in Atlanta | Early bird registration is now open for the 40th A... | 12169 | Event News | Early Bird Registration Now Open for the 40th Annual APEC 2025 in Atlanta | Early bird registration is now open for the 40th Annual Applied Power Electronics Conference (APEC), running March 16-20 at the Georgia World Convention Center in Atlanta. The APEC 2025 conference and exposition gathers power electronics engineers, academics and students from all over the world to learn about the latest research, technologies and products. Early bird registration ends Jan. 13, 2025. Full registration includes access to the APEC Technical Program. Comprising nearly 800 paper presentations, sessions and seminars, the conference offers a broad scope of content: APEC Plenary Session (visionary talks by distinguished speakers), Technical Sessions (lecture sessions and dialogue sessions based on peer-reviewed papers), Industry Sessions (presentations showcasing work in all areas of power electronics), Professional Education Seminars (in-depth seminars on practical aspects of power electronics), Debate – formerly RAP – Sessions (expert panelists identify three hot topics for friendly debate) as well as Exhibitor Presentations (exhibitor companies highlight new products and technologies). Also included in the full registration package is admission to the APEC 2025 Exposition and Special Events. The 2025 exposition will gather nearly 300 exhibitors to the sold-out exhibit floor. With its lively, interactive trade show environment, APEC 2025 offers participation in such events as the MicroMouse contest, the FIRST Robotics demonstration and the Wednesday evening Social Event celebrating APEC's 40th anniversary. | 29.10.2024 09:00:00 | Oct | news_2024-11-15_4.jpg | \images\news_2024-11-15_4.jpg | https://apec-conf.org/attendees/registration/ | apec-conf.org |
| Call for Proposals for Innovation Award & Young Engineer Award | The Semikron Danfoss Innovation Award and the Semi... | 12168 | Industry News | Call for Proposals for Innovation Award & Young Engineer Award | The Semikron Danfoss Innovation Award and the Semikron Danfoss Young Engineer Award are given for outstanding innovations in projects, prototypes, services or novel concepts in the field of power electronics in Europe, combined with notable societal benefits in form of supporting environmental protection and sustainability by improving energy efficiency and conservation of resources. The prizes are awarded in cooperation with the European ECPE Network. With the award Semikron Danfoss wants to motivate people of all ages and organizations of any legal status to deal with innovations in power electronics, a key technology of the 21st century, in order to improve environmental protection and sustainability by energy efficiency and conservation of resources. The Semikron Danfoss Innovation and Young Engineer Prizes 2025 will be awarded in the frame of the ECPE Annual Event in April 2025. A single person or a team of researchers can be awarded. Semikron Danfoss Innovation Award includes prize money of EUR 10,000, while the Semikron Danfoss Young Engineer Award for researchers who have not yet completed their 30th year of age includes prize money of EUR 3,000. The award targets at projects, prototypes, services and novel concepts developed in Europe, which did not yet appear on the market, which are used in a novel application, or which form an absolute novelty, and therewith fulfil the requirement to be extraordinary and remarkable. To apply for the awards own applications as well as proposals from third parties are welcomed. The deadline for submission ends on 31.01.2025. | 28.10.2024 08:00:00 | Oct | news_2024-11-15_3.png | \images\news_2024-11-15_3.png | https://www.semikron-danfoss.com/about-semikron-danfoss/news-press/detail/announcement-and-call-for-proposals-for-semikron-danfoss-innovation-award-semikron-danfoss-young-engineer-award.html | semikron-danfoss.com |
| 3D Power Design and Manufacturing Symposium (3D-PEIM) 2025 | The PSMA Packaging and Manufacturing Committee ann... | 12172 | Event News | 3D Power Design and Manufacturing Symposium (3D-PEIM) 2025 | The PSMA Packaging and Manufacturing Committee announce its Fifth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM-20235). 3D-PEIM will take place July 8–10, 2025 at the National Renewable Energy Laboratory (NREL) in Golden, Colorado. The symposium is designed for any engineer or manager involved in the design and manufacturing of high-density power sources using 3D technology. It will feature key speakers and technical sessions focused on increasing the power density and performance of power solutions. Plenary presentations will include: "Beyond 2030: Powering the E-Powertrain with High-Value and High-Efficiency Power Conversion Systems - A BorgWarner Perspective", presented by Harsha Nanjundaswamy, BorgWarner, "Advanced Packaging to System Integration - Trends and Challenges", presented by Devan Iyer, IPC and "The Power Delivery and Energy Storage Challenge in Advanced Packaging", presented by Subramanian Iyer, University of California Los Angeles. Attendees are also invited to tour the power electronics facilities of the National Renewable Energy Laboratory. | 25.10.2024 12:00:00 | Oct | news_2024-11-15_7.png | \images\news_2024-11-15_7.png | https://www.3d-peim.org/ | 3d-peim.org |
| Caroline Pannier to take over as Exhibition Director of electronica | With effect from December 1, 2024, Caroline Pannie... | 12151 | People | Caroline Pannier to take over as Exhibition Director of electronica | With effect from December 1, 2024, Caroline Pannier will become the new Exhibition Director of electronica. She succeeds Katja Stolle, who will in future take over as Executive Director of Technology Fairs at Messe München from Dr. Martin Lechner, who is retiring in December. Caroline Pannier has worked at Messe München in the field of electronics trade fairs for almost 13 years. The business graduate with an LL.M in technology law has successfully demonstrated her expertise there, among other things, as Exhibition Director of productronica and most recently as Deputy Exhibition Director of electronica. "As the most important international meeting place for the industry, electronica brings together innovations and trends, and provides new stimulus. I am very much looking forward to working with my team and in close cooperation with the industry to further develop the trade fair and set new trends," says Caroline Pannier about her new role. | 24.10.2024 09:00:00 | Oct | news_2024-11-01_4.jpg | \images\news_2024-11-01_4.jpg | https://electronica.de/en/trade-fair/journalists/press-releases/detail/caroline-pannier-to-take-over-as-exhibition-director-of-electronica.html | electronica.de |
| Zero-flux DC Current Transducer selected for technical Facelift and Renovation Program | For a for technical facelift and renovation progra... | 12148 | Industry News | Zero-flux DC Current Transducer selected for technical Facelift and Renovation Program | For a for technical facelift and renovation program of its North Area (NA), CERN has selected the DM1200 zero-flux DC current transducer (DCCT) from Danisense for use in the CERN-designed POLARIS power converters. Comments Miguel Cerqueira Bastos, Section Leader in the Electrical Power Converter group at CERN: "The DM1200 is a current output DCCT and, as such, it provides a current signal proportional to the measured current, which in this case is the output current of the POLARIS power converter. We convert the output current from the DCCT into a voltage signal, then digitize it, and use it in a digital current loop to precisely control the current in the magnets of the NA experimental lines." Based on Danisense's ultra stable closed loop flux gate technology, the DM1200 current transducer benefits from very low offset and ultra low drift. The device was successfully evaluated by CERN for use with DC currents up to 2kA with a linearity error less than 1 ppm. With its specific design it provides high resolution for precise monitoring, reliable and consistent performance, and ruggedness for durability. Danisense's DM1200 DCCT has been chosen for the new POLARIS power converter series because of its excellent balance between performance and cost at primary currents as high as 2kA. | 23.10.2024 06:00:00 | Oct | news_2024-11-01_1.jpg | \images\news_2024-11-01_1.jpg | https://danisense.com/ | danisense.com |
| EMI Suppression in the Low-Frequency Range directly on the Busbar | With the WE-OEFA-LFS ferrite, Würth Elektronik has... | 12164 | Product Release | EMI Suppression in the Low-Frequency Range directly on the Busbar | With the WE-OEFA-LFS ferrite, Würth Elektronik has released an oval-shaped ferrite ring for interference suppression at low frequencies. Thanks to its individual shape, the ferrite ring is able to slide over busbars for interference suppression. Its MnZn core material enables it to suppress low-frequency interference. The main application area for the new ferrite is electric vehicles. The AEC-Q200-certified WE-OEFA-LFS, with an operating temperature range of -40 to 105 °C, is designed for high-current applications and the frequency range from 1 to 100 MHz. This enables the ferrite to suppress electromagnetic interference in battery management systems, inverters, on-board chargers, cable harnesses and many other applications. The latest interference suppression ferrite in Würth Elektronik's portfolio measures 15.6 × 65.4 × 35.4 mm³, while the cable or busbar it encloses can measure 43 × 13 mm². | 22.10.2024 14:30:00 | Oct | news_2024-11-01_17.jpg | \images\news_2024-11-01_17.jpg | https://www.we-online.com/en/news-center/press/press-releases?d=WE-OEFA-LFS | we-online.com |
| Global Distribution Agreement regarding Ideal Switch Products | Menlo Microsystems (Menlo Micro), a company claimi... | 12155 | Industry News | Global Distribution Agreement regarding Ideal Switch Products | Menlo Microsystems (Menlo Micro), a company claiming to be "responsible for bringing to market the greatest electronic component innovation since the transistor with its Ideal Switch® technology", announced a global distribution agreement with DigiKey. Under the terms of the agreement, DigiKey becomes a franchised distributor for worldwide marketing and sales of Menlo Micro's Ideal Switch products. | 22.10.2024 13:00:00 | Oct | news_2024-11-01_8.jpg | \images\news_2024-11-01_8.jpg | https://menlomicro.com/newsroom/menlo-micro-announces-global-distribution-agreement-with-digikey-to-promote-and-deliver-ideal-switch-products | menlomicro.com |
| Collaboration to expand Consulting Services | Foxy Power announced a partnership with DL Consult... | 12154 | Industry News | Collaboration to expand Consulting Services | Foxy Power announced a partnership with DL Consulting. This collaboration is based on technological business development paired with industry-wide market analyses to enable faster success in the market. By combining the expertise of both companies, it will allow for superior consulting experience and will give the common customer base access to the specialist from the industry. In its consulting services DL Consulting specializes on wide bandgap solutions like SiC and GaN including market research, power electronics design, acquisition services, go-to-market strategies and advisory to institutional investors. The company will deliver its know-how and services to Foxy Power's customer base to enable a better customer journey. Foxy Power, an advocate for startups as well as other companies at the forefront of disruptive technologies by delivering worldwide business development, sales, and strategy services. Driving the concept of product value maximization, Foxy Power enhances manufacturers' sales outreach, emphasizing an application-centric approach. | 22.10.2024 12:00:00 | Oct | news_2024-11-01_7.jpg | \images\news_2024-11-01_7.jpg | https://consulting.liesabeths.de/ | consulting.liesabeths.de |
| Quick charging EVs from Household Power Outlets with 99% Efficiency | On the EnerConnect project, researchers at Fraunho... | 12171 | Industry News | Quick charging EVs from Household Power Outlets with 99% Efficiency | On the EnerConnect project, researchers at Fraunhofer IZM are testing bidirectional blocking gallium nitride (GaN) transistors to design a system that could be used with the next generation of active converters and rectifiers. The hardware removes the need for a separate conversion stage and can achieve record 99% efficiency. As part of the EnerConnect project funded by Germany's Ministry of Education and Research, scientists at the Fraunhofer Institute for Reliability and Microintegration IZM and the Technical University of Berlin have teamed up with their industry partners Delta Electronics Inc., BIT GmbH, and Infineon Technologies AG to produce a system with bidirectional blocking GaN transistors. These transistors bring substantial benefits in terms of power density and efficiency and promise to make charging electric vehicles from commonplace home sockets much more effective. The buck-boost converter that the researchers are working on has never yet played much of a role in power electronics, as it would have been far too complex with conventional components. It can work with higher or lower input voltages. Current practice for electric vehicles is to have active rectifiers operating at high voltages. The new circuit currently being worked on at Fraunhofer IZM would allow the voltage to be lower, in turn reducing the switching losses in the transistor. The researchers are working towards a target switching frequency of 300 kHz, which would allow power density to be ramped up to 15 kW per liter – a full 800% over the chargers currently in the market. | 21.10.2024 11:00:00 | Oct | news_2024-11-15_6.jpg | \images\news_2024-11-15_6.jpg | https://www.izm.fraunhofer.de/en/news_events/tech_news/enerconnect.html | izm.fraunhofer.de |
| AEC-Q200 Compliant, Automotive Grade Multilayered Varistor Series | Bourns announced its Model BVRA Series AEC-Q200 co... | 12165 | Product Release | AEC-Q200 Compliant, Automotive Grade Multilayered Varistor Series | Bourns announced its Model BVRA Series AEC-Q200 compliant, automotive grade multilayered varistors. These low voltage varistors feature transient energy absorption due to improved energy volume distribution and power dissipation. Designed specifically for use in automotive circuits requiring surge protection, the new series can also be applied to protect other integrated circuits and components such as power supplies, entertainment electronics as well as CAN, LIN and Flexray-based modules. The Model BVRA Series is available with working voltages from 5.5 to 85 VDC and provides a response time of less than 0.5 ns to help ensure prompt energy diversion during transient events. Offered in a range of compact 0402, 0603, 0805 and 1206 SMD packages, the new varistors have an insulator overcoat designed to help enhance efficiency and streamline integration. In addition, these models meet the IEC 61000-4-5 standard, and deliver stable leakage current for a high reliability, consistent overvoltage protection solution. | 17.10.2024 15:30:00 | Oct | news_2024-11-01_18.jpg | \images\news_2024-11-01_18.jpg | https://www.bourns.com/news/press-releases/pr%2f2024%2f10%2f17%2fbourns-announces-aec-q200-compliant--automotive-grade-multilayered-varistor-series | bourns.com |
| 300 W Power Supplies in 3" x 5" Packages | TRACO Power announced TXO 300, a compact 300 W AC/... | 12161 | Product Release | 300 W Power Supplies in 3" x 5" Packages | TRACO Power announced TXO 300, a compact 300 W AC/DC Power supply in an 3" x 5" open-frame construction. The TXO line specifically focuses on industrial power supplies. With an efficiency of up to 92 % these models are designed to meet the ErP directive (< 0.3 W no load power consumption). Features include internal EN55032 class B filter, as well as EMC characteristics dedicated for applications in industrial/automation and test & measurement fields. While the input range is 85-264 V<sub>AC</sub> it is full load convection cooled from -20 °C to +50 °C, and protection class II prepared. The supply units offer 3000 V<sub>AC</sub> reinforced I/O isolation, an internal EN55032 class B filter, short circuit and overvoltage protection. They are EN 61000-3-2 compliant and according to IEC/EN/UL 62368-1 safety-approved. | 17.10.2024 11:30:00 | Oct | news_2024-11-01_14.jpg | \images\news_2024-11-01_14.jpg | https://www.tracopower.com/int/txo | tracopower.com |
| Electronic Fuses (eFuse ICs) for HV Power Management | Toshiba Electronics has launched two additional el... | 12160 | Product Release | Electronic Fuses (eFuse ICs) for HV Power Management | Toshiba Electronics has launched two additional electronic fuses (eFuse ICs) named TCKE903NL and TCKE905ANA, which are reusable, thereby reducing maintenance costs and recovery time for equipment repairs, and support various functions to protect power supply line circuits. The eFuses are suited for a wide range of power management applications while operating with a switch ON resistance of typically 34 mΩ and an output current of up to 4.0 A. The products are suited for electronic slew rate control and power supply line circuit protection in industrial applications such as servers, professional kitchen equipment and more. The TCKE9 series of 25 V input voltage eFuse ICs offers two product types: an auto-retry type that allows the eFuse IC to automatically recover the circuit itself, and a latch type that is recovered by an external signal. Two different clamping voltage levels are available, i.e. 3.8 V and 5.7 V. The current limit and voltage clamp functions of the TCKE9 series protect the circuit against overcurrent and overvoltage conditions, including over temperature and short-circuit protection features to protect the circuit by immediately shutting off when abnormal heat is generated in the circuit or an unexpected short-circuit condition occurs. As Toshiba intends to obtain IEC 62368-1 certification, the international safety standard for ICT and AV equipment, the eFuse ICs will also simplify and accelerate certification testing process of the end equipment. The TCKE9 series is available in a thin and compact WSON8 package measuring 2.0 mm × 2.0 mm x 0.8 mm. | 17.10.2024 10:30:00 | Oct | news_2024-11-01_13.jpg | \images\news_2024-11-01_13.jpg | https://toshiba.semicon-storage.com/eu/company/news/2024/10/power-management-ics-20241017-1.html | toshiba.semicon-storage.com |
| AC/DC Flyback Controllers | Nexperia introduced a series of AC/DC flyback cont... | 12159 | Product Release | AC/DC Flyback Controllers | Nexperia introduced a series of AC/DC flyback controllers. The NEX806/8xx and NEX8180x are designed for GaN-based flyback converters in devices such as power delivery (PD) chargers, adapters, wall sockets, strip sockets, industrial power and auxiliary power supplies, and other AC/DC conversion applications requiring high power density. The NEX806xx/NEX808xx are quasi-resonant/multi-mode flyback controllers which operate from a V<sub>CC</sub> range between 10-83 V, while the NEX81801/NEX81802 are adaptive synchronous rectifier controllers. These ICs can be used in combination with Nexperia's NEX52xxx PD controllers and other discrete power devices to deliver a turn-key flyback converter solution that optimizes the current sense voltage level and PFM mode, reduces standby power, and achieves high efficiency across the entire load range. The primary side controller can be used to drive a silicon MOSFET or GaN transistor directly. These ICs employ the TSOT23-6 flip-chip package and provide an over temperature protection (OTP) function as well as additional protection features. | 17.10.2024 09:30:00 | Oct | news_2024-11-01_12.jpg | \images\news_2024-11-01_12.jpg | https://www.nexperia.com/about/news-events/press-releases/-AC-DC-flyback-controllers-from-Nexperia-enable-higher-power-density-GaN-based-flyback-converters | nexperia.com |
| 98 % Efficiency at 158 kW/l: Automotive-grade Power Modules deliver 48 V in 800-V EVs | Vicor has released three automotive-grade power mo... | 12156 | Product Release | 98 % Efficiency at 158 kW/l: Automotive-grade Power Modules deliver 48 V in 800-V EVs | Vicor has released three automotive-grade power modules for 48V electrical vehicle systems, which are claimed to "deliver industry-leading power density, and support automotive OEMs and tier one production in 2025". The modules named BCM®6135, DCM™3735 and PRM™3735 use AEC-Q100 certified Vicor-designed ICs and have completed the PPAP process with automotive customers. Operating with a power density of 158 kW/l the BCM6135 is a 98 % efficient 2.5 kW BCM bus converter which converts 800 V from the traction battery to 48 V to provide a safety extra-low voltage (SELV) power supply for the vehicle. The BCM6135 internally provides the isolation between high voltage and low voltage which creates a significant reduction in terms of space required for the DC/DC conversion. The bidirectional rapid current transient response rate of 8 MA/s allows the BCM6135 to replace a 48 V battery - by serving as a virtual 48 V battery in the xEV vehicle and reducing vehicle costs by up to $100 and the vehicle mass by up to 25 kg. The DCM3735 2.0 kW DCM DC/DC converter transforms an unregulated 48 V input with a power density of 300 kW/l into a regulated 12 V output, which can be trimmed within a range of 8 – 16 V. The PRM3735 is a 2.5 kW PRM regulator for 48 V power that is 99.2% efficient with 260 kW/l power density. When used as a part of the 48 V zonal architecture, the DCM3735 can be mounted remotely to create a local 12 V supply in a vehicle zone. This application method allows the PDN designer to effectively support 12 V loads while achieving up to 90 % of the cost and weight savings that come from transitioning to a 48 V bus. These modules can be arranged in over 300 configurations. | 16.10.2024 06:30:00 | Oct | news_2024-11-01_9.jpg | \images\news_2024-11-01_9.jpg | https://www.vicorpower.com/press-room/new-high-density-automotive-grade-power-modules/ | vicorpower.com |
| AC programmable Power Sources | The GENESYS™ AC (GAC) and GENESYS™ AC ... | 12163 | Product Release | AC programmable Power Sources | The GENESYS™ AC (GAC) and GENESYS™ AC PRO (GAC-PRO) series of 2 kVA and 3 kVA rated programmable AC power sources from TDK-Lambda are claimed to provide the highest power density for a fully featured programmable AC power source with a 1U chassis height. They offer the ability to allow AC, DC, or combined AC+DC operation while allowing full-rated power and current in DC modes, as well as advanced functions such as waveform generation and harmonics analysis as standard. The GENESYS AC PRO also includes real-time analog control functionality necessary for more complex test scenarios, such as hardware in the loop (HIL). Other applications include automated test equipment, avionics airborne equipment, aircraft electrical power, defence (RTCA, Boeing, Airbus Standards), automotive, e-mobility, and power source testing. 2 kVA and 3 kVA units may be user-combined for additional power and to provide multiple phase outputs. The front panel controls can be made through the use of a capacitive touch display. Multiple languages are catered for, including, Chinese, English, French, German, Japanese, Korean, and Spanish. As standard, LAN, USB, RS232, RS485, and Analog Programming / Monitoring are provided, with optional IEEE / GPIB. The included remote GUI software allows the user full control, sequence programming, plus the option to use pre-programmed test standards for common IEC, aerospace, and marine tests. | 15.10.2024 13:30:00 | Oct | news_2024-11-01_16.jpg | \images\news_2024-11-01_16.jpg | https://www.emea.lambda.tdk.com/uk/products/genesys-ac-source | lambda.tdk.com |
| SiC Company receives Funding and more to invest $ 2.5 Billion in the US | The U.S. Department of Commerce and Wolfspeed have... | 12150 | Industry News | SiC Company receives Funding and more to invest $ 2.5 Billion in the US | The U.S. Department of Commerce and Wolfspeed have signed a non-binding preliminary memorandum of terms (PMT) for up to $ 750 million in proposed direct funding under the CHIPS and Science Act. In addition, a consortium of investment funds have agreed to provide Wolfspeed an additional $ 750 million of new financing. Together these investments support Wolfspeed's long-term growth plans and bolster US domestic production of silicon carbide to power clean energy systems. In addition, Wolfspeed expects to receive $1 billion of cash tax refunds from the advanced manufacturing tax credit under the CHIPS and Science Act (section 48D), giving the com¬pany, in total, access to up to $ 2.5 billion of expected capital to support the expansion of silicon carbide manufacturing in the United States. According to Gregg Lowe, CEO of Wolfspeed, this is "not just about growth for Wolfspeed - it's about driving technological advancement that powers the future." These proposed funds, which are expected to be received upon milestone achievements in the coming years, would enable Wolfspeed to complete its multi-billion-dollar greenfield U.S. capacity expansion plan. In addition to the proposed direct funding, Wolfspeed intends to benefit from the U.S. Treasury Department Investment Tax Credit of up to 25% of the qualified capital expenditures primarily related to its construction and installation of equipment at The John Palmour Manufacturing Center for Silicon Carbide in Siler City, NC and comple¬tion of the Mohawk Valley Fab M-Line West Expansion in Utica, NY. | 15.10.2024 08:00:00 | Oct | news_2024-11-01_3.jpg | \images\news_2024-11-01_3.jpg | https://www.wolfspeed.com/company/news-events/news/wolfspeed-announces-750m-in-proposed-funding-from-us-chips-act-and-additional-750m-from-investment-group-led-by-apollo-galvanizing-global-leadership-in-delivering-next-generation-silicon-carbide/ | wolfspeed.com |
| Combining Silicon and Silicon Carbide in a Power Module for EVs | Infineon Technologies is introducing the HybridPAC... | 12157 | Product Release | Combining Silicon and Silicon Carbide in a Power Module for EVs | Infineon Technologies is introducing the HybridPACK™ Drive G2 Fusion, trying to establish "a new power module standard for traction inverters in the e-mobility sector". The HybridPACK Drive G2 Fusion is a plug'n'play power module that implements a combination of silicon and SiC technologies. One of the main differences between silicon and SiC in power modules is that SiC has a higher thermal conductivity, breakdown voltage and switching speed, making it more efficient, but also more expensive than silicon-based power modules. With the new module, the SiC content per vehicle can be reduced, while maintaining vehicle performance and efficiency at a lower system cost. The company claims that "system suppliers can realize nearly the system efficiency of a full SiC solution with only 30 percent SiC and 70 percent silicon area". The HybridPACK Drive G2 Fusion module features up to 220 kW in the 750 V class over the entire temperature range from -40 °C to +175 °C. | 15.10.2024 07:30:00 | Oct | news_2024-11-01_10.jpg | \images\news_2024-11-01_10.jpg | https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFATV202410-010.html | infineon.com |
| Capacitors for tough Conditions | Rutronik now offers the C4AQ-P capacitors from Kem... | 12162 | Product Release | Capacitors for tough Conditions | Rutronik now offers the C4AQ-P capacitors from Kemet for use in particularly challenging environments. They function reliably in a temperature range of -55 °C to +125 °C and a voltage range of 450 V<sub>DC</sub> to 1600 V<sub>DC</sub>. In addition, the capacitors have self-healing capabilities. They are AEC-Q200 qualified, THB (temperature-humidity bias) tested and are suited for applications in the automotive industry, in renewable energy systems or in energy storage systems. They are available in the capacitance range of 4.7 nF to 8.2 nF with an expected operating life at 125 °C of 4000 hours. Cable spacing is 27.5 mm to 52.5 mm. | 14.10.2024 12:30:00 | Oct | news_2024-11-01_15.jpg | \images\news_2024-11-01_15.jpg | https://www.rutronik24.com/product/kemet/c4aqobu4500p11j/16128433.html | rutronik24.com |
| GaN power ICs with Autonomous EMI Control and loss-less Sensing | Navitas announced GaNSlim™, a new generation... | 12158 | Product Release | GaN power ICs with Autonomous EMI Control and loss-less Sensing | Navitas announced GaNSlim™, a new generation of integrated GaN power ICs integrating drive, control, and protection, with integrated EMI control and loss-less current sensing, all within a high thermal performance proprietary DPAK-4L package. Additionally, with a startup current below 10 µA, GaNSlim devices are compatible with industry-standard SOT23-6 controllers and eliminate HV startup. Integrated features such as loss-less current sensing eliminate external current sensing resistors, while over-temperature protection increases system robustness and auto sleep-mode raises light and no-load efficiency. Autonomous turn-on/off slew rate control improves efficiency and power density while reducing external component count, system cost and EMI. The DPAK package enables 7 °C lower temperature operation versus conventional alternatives, supporting high-power-density designs with ratings up to 500 W. Target applications include chargers for mobile devices and laptops, TV power supplies, lighting, etc. Devices in the NV614x GaNSlim family are rated at 700 V with R<sub>DS(ON)</sub> ratings from 120 mΩ to 330 mΩ and are available in versions optimized for both isolated and non-isolated topologies. | 14.10.2024 08:30:00 | Oct | news_2024-11-01_11.jpg | \images\news_2024-11-01_11.jpg | https://navitassemi.com/navitas-ganslim-power-ics-drive-ease-of-use-system-cost-and-energy-savings-in-mobile-consumer-and-home-appliance/ | navitassemi.com |
| 3D Power Design and Manufacturing Symposium (3D-PEIM) 2025 | The PSMA Packaging and Manufacturing Committee is ... | 12149 | Event News | 3D Power Design and Manufacturing Symposium (3D-PEIM) 2025 | The PSMA Packaging and Manufacturing Committee is pleased to announce its Fifth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM-20235). 3D-PEIM will take place July 8–10, 2025 at the National Renewable Energy Laboratory (NREL) in Golden, Colorado. The Symposium is designed for any engineer or manager involved in the design and manufacturing of high-density power sources using 3D technology. It will feature key speakers and technical sessions focused on increasing the power density and performance of power solutions. <br>Plenary presentations will include: <br>- Beyond 2030: Powering the E-Powertrain with High-Value and High-Efficiency Power Conversion Systems - A BorgWarner Perspective (Presenter: Harsha Nanjundaswamy, BorgWarner) <br>- Advanced Packaging to System Integration - Trends and Challenges (Presenter: Devan Iyer, IPC) <br>- The Power Delivery and Energy Storage Challenge in Advanced Packaging (Presenter: Subramanian Iyer, University of California Los Angeles) <br>Attendees are also invited to tour the world-class power electronics facilities of the National Renewable Energy Laboratory. | 14.10.2024 07:00:00 | Oct | news_2024-11-01_2.jpg | \images\news_2024-11-01_2.jpg | https://www.3d-peim.org/ | 3d-peim.org |