Bodo's WBG Expert Talk

Talk to the experts! Join my virtual roundtable, focused on wide bandgap technology. Our goal is to keep the dialog going on, independent of any events that are hosted on fixed dates. These expert talks will build on the articles we published in the magazine, giving you the chance to ask questions to the experts out of the industry.

If you are interested in participating as an expert, please plan your article for the magazine. We will then invite you to one of the upcoming rounds. Our aim is to give as many companies as possible this opportunity, as we are sure that a wide variety of contributions is of value to everyone. Different speakers will bring new perspectives and approaches.

A huge thank you goes out to all participants of this successful edition of Bodo’s Expert Talk, of course especially to the speakers for making this such a lively discussion!

Recordings of all Expert Talk sessions are now available here.

We look forward to the next episode, coming to you on Wednesday, April 2nd 2025.
And don’t miss the current issue of the magazine – it is waiting for you in my archive!

Below you find the articles that are addressed in my last expert talk.

Revolutionizing Circuit Protection with SiC JFETs

Download the Article:
bp_article_2217.pdf

SiC
2024-10-09 3:00

The mid-20th century was a time of significant innovation in residential and industrial electrical systems. One of the most impactful advancements was the transition from traditional replaceable fuses to miniature circuit breakers (MCBs). While fuses provided basic protection, they had to be replaced after they blew. Circuit breakers, on the other hand, could be easily reset after tripping.
This convenience led to building codes and electrical standards favoring circuit breakers over fuses in new construction.

By Jonathan Dodge, P.E., Principal Applications Engineer, and Andy Wilson, Senior Business Development, Qorvo (ask-qorvo@bodospower.com)

This article was published in our July 2024 issue.

Design Considerations for a High-Voltage SiC-Based Battery Disconnect Switch

Download the Article:
bp_article_2250.pdf

SiC
2024-10-09 3:00

Electrical systems with DC bus voltages of 400V or greater, powered by single- or three-phase grid power or an energy storage system (ESS), can enhance their reliability and resilience with the benefits offered from solid-state circuit protection. In designing a high-voltage solid-state battery disconnect switch there are several fundamental design decisions to consider.

By Ehab Tarmoom, Senior Technical Staff Applications Engineer - Silicon Carbide Business Unit, Microchip Technology (ask-microchip@bodospower.com)

This article was published in our September 2024 issue.

Sustainable Power Conversion in EVs with Wide-Bandgap Materials and Top-Side Cooling

Download the Article:
bp_article_2199.pdf

SiC
2024-10-09 3:00

The world of global mobility is on the cusp of a remarkable shift. In 2024, global EV sales are expected to soar by about 20 percent as governments and consumers try to mitigate the effects of climate change. By 2030, EVs are forecasted to account for at least two-thirds of global car sales.

By Daniel Makus, Application Director xEV Power Conversion (OBC, HV DC-DC), and Rafael Garcia, System Architect for OBC and DC-DC Applications, both at Infineon Technologies (ask-infineon@bodospower.com)

This article was published in our June 2024 issue.

Using GaN FETs with Controllers and Gate Drivers Designed for Silicon MOSFETs

Download the Article:
bp_article_2161.pdf

GaN
2024-10-09 4:30

Gallium Nitride (GaN) FETs have revolutionized the power electronics industry, offering advantages such as smaller size, faster switching, higher efficiency, and lower costs compared to traditional silicon MOSFETs. However, the rapid evolution of GaN technology has sometimes outpaced the development of dedicated GaN-specific gate drivers and controllers. Consequently, circuit designers often turn to generic gate drivers designed for silicon MOSFETs, necessitating careful consideration of various factors to ensure optimal performance.

By Alejandro Pozo, Ph.D., Senior Applications Engineer, Efficient Power Conversion (ask-epc@bodospower.com)

This article was published in our February 2024 issue.

GaN ICs simplify Motor Joint Inverter Design for Humanoid Robots

Download the Article:
bp_article_2201.pdf

GaN
2024-10-09 4:30

Battery-powered applications such as new-generation robots, drones, and power tools require a reduction in space and a simplification of the design to control electric motors. Optimizing size and components results in innovative solutions that include more functions in a small space without losing efficiency and performance. EPC ePower™ Stage ICs technology helps to simplify and improve the inverter design in advanced motor control applications.

By Francesco Musumeci, Application Engineer, Italy Application Center, Efficient Power Conversion (ask-epc@bodospower.com)

This article was published in our June 2024 issue.

Advancements in USB Power Delivery: GaN Technology for Efficiency and High-Power Density

Download the Article:
bp_article_2187.pdf

GaN
2024-10-09 4:30

The first Universal Serial Bus (USB) specification, released in 1996, aimed to standardize power delivery and connectivity in computing and telecommunication industries [1]. Initially supporting a 5 V power bus with up to 5 A of current (25 W) and maximum data transfer rates of 12 Mbit/s, USB has evolved significantly due to the proliferation of electronic devices, leading to a demand for higher power capabilities.

By Parinda Chantarasereekul, Application Engineer, and Alejandro Pozo Arribas, Senior Application Engineer, Efficient Power Conversion (ask-epc@bodospower.com)

This article was published in our May 2024 issue.

Enhancing Reliability and Compatibility with Upgraded E-mode GaNFET

Download the Article:
bp_article_2253.pdf

GaN
2024-10-09 4:30

GaNPower International unveils an advanced version of the E-Mode GaNFET (GP65R45T4), featuring a boosted gate turn-on voltage of 4V and an expanded gate driving range of +/-20V. This device incorporates cutting-edge All-GaN-IC technology, enabling a seamless transition from traditional silicon and SiC MOSFETs while ensuring pin-to-pin replacement compatibility.

By Daniel Wan and Simon Li, GaNPower International (ask-ganpower@bodospower.com)

This article was published in our September 2024 issue.

The Role of Gallium Nitride Power Transistors and Integrated Circuits in the Emerging Humanoid Robot Market

Download the Article:
bp_article_2258.pdf

GaN
2024-10-09 4:30

The world is entering a new era of automation, where robots are becoming increasingly sophisticated, capable of performing tasks once considered the exclusive domain of humans. At the forefront of this transformation are humanoid robots, designed to mimic the form and functions of the human body.

By Alex Lidow, Ph.D., CEO of Efficient Power Conversion Corporation (EPC) (ask-epc@bodospower.com)

This article was published in our October 2024 issue.

Towards Vertical GaN Power ICs

Download the Article:
bp_article_2262.pdf

GaN
2024-10-09 4:30

Two trends are currently emerging in GaN power technologies: One the one hand, the monolithic integration of system peripherals to the power transistor, which can reduce system costs, the bill of materials and, last but not least, improve performance. On the other hand, vertical transistors are being developed to increase breakdown voltages and thus achieving higher switching power. Combining lateral and vertical geometry is the aim of Fraunhofer IAF with the development of vertical GaN power ICs and their related technologies.

By Michael Basler, Richard Reiner, Stefan Mönch, and Philipp Döring, Fraunhofer Institute for Applied Solid State Physics (Fraunhofer IAF) (ask-fraunhofer@bodospower.com)

This article was published in our October 2024 issue.